SPF-5122Z

SPF-5122Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier Preliminary SPF-5122Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER RoHS Compliant and Pb-Free Product Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT Gain (dB) 25.0 22.0 19.0 16.0 13.0 10.0 7.0 4.0 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Features Ultra-Low Noise Figure=0.60dB @ 900MHz Gain=18.9dB @ 900MHz High Linearity: OIP3=40.5dBm @ 1900MHz Channel Power=13.4dBm (65dBc IS95 ACPR, 880MHz) P1dB =23.4dBm @ 1900MHz 4.00 3.50 3.00 2.50 2.00 1.50 1.00 Gain and NF versus Frequency Broadband Application Circuit (5V, 90mA) Single-Supply Operation: 5V @ Idq=90mA Flexible Biasing Options: 3-5V, Adjustable Current NF (dB) SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Broadband Internal Matching Applications Cellular, PCS, W-CDMA, ISM, WiMAX Receivers PA Driver Amplifier Low Noise, High Linearity Gain Block Applications Gain NF 0.50 0.00 Frequency (MHz) Parameter Small Signal Power Gain Output Power at 1dB Compression Output Third Order Intercept Point Noise Figure Input Return Loss Output Return Loss Reverse Isolation Device Operating Voltage Device Operating Current Thermal Resistance Min. Specification Typ. 18.9 12.9 23.0 23.4 37.9 40.5 0.59 0.64 -14.6 -21.0 -16.8 -13.0 -24.1 -18.4 5.00 90 65 Max. Unit dB dB dBm dBm dBm dBm dB dB dB dB dB dB dB dB V mA °C/W 0.9GHz 1.96GHz 0.9GHz 1.9GHz 0.9GHz 1.9GHz 0.9GHz 1.9GHz 0.9 GHz 1.9GHz 0.9GHz 1.9GHz 0.9GHz 1.9GHz Quiescent Junction to lead Condition 5.25 Test Conditions: VD =5V, IDQ =90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm ZS =ZL =50 Ω, 25°C, Broadband Application Circuit RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. EDS-105470 Rev E 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 12 SPF-5122Z Absolute Maximum Ratings Parameter Max Device Current (lD) Max Device Voltage (VD) Max RF Input Power Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temperature ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level (MSL) Preliminary Rating 120 5.5 27 660 150 -40 to + 85 -65 to +150 Class 1B MSL 1 Unit mA V dBm mW °C °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD