STA-6033Z

STA-6033(Z) STA-6033(Z) 4.9GHz to 5.9GHz 3.3 V Power Amplifier 4.9GHz to 5.9GHz 3.3V POWER AMPLIFIER Package: QFN, 16 pin, 3mmx3mm Product Description Features RFMD’s STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final stage for 802.11a equipment in the 4.9 GHz to 5.9GHz band. It can be run from a 3V to 6V supply. Optimized on-chip impedance matching circuitry provides a 50 nominal RF input impedance. A single external output allows for matching circuit covers the entire 4.9GHz to 5.9GHz band. The external output match allows for load line optimization for other applications or optimized for other applications or optimized performance over narrower bands. It is designed as a drop in replacement for similar parts in its class. This product is available in RoHS Compliant and Green package with matte tin finish, designated by the “Z” package suffix. Optimum Technology Matching® Applied       GaAs HBT GaAs MESFET   InGaP HBT SiGe BiCMOS  802.11a 54Mb/s Class AB Performance POUT =18dBm at 3% EVM, 3.3V, 210mA High Gain=27dB Output Return Loss