STQ-1016(Z)
STQ-1016(Z)
250MHz to
1000 MHz
Direct Quadrature Modulator
250MHZ TO 1000MHZ DIRECT QUADRATURE
MODULATOR
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm
Product Description
Features
RFMD’s STQ-1016Z is a direct quadrature modulator targeted for use in a wide range of communications systems, including cellular/PCS, GSM, CDMA, TETRA, and ISM datacom. This
device features a wide 250MHz to 1000MHz operating frequency band, excellent carrier and
sideband suppression, and a low broadband noise floor.
Available in Lead Free, RoHS
Compliant, and Green Packaging
Excellent Carrier Feedthrough,
-38dBm Constant Over Output
Power
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
9
SiGe HBT
GaAs pHEMT
BBQP
1
16
BBQN
VCC
2
15
VCC
VEE
3
14
VEE
LOP
4
LON
5
VEE
6
SD
7
BBIP
8
LO
QUADRATURE
GENERATOR
Si CMOS
RF MEMS
rN
Si BJT
GaN HEMT
RF Output: TA=25°C
Min.
250
-12
N
ot
RF Frequency Range
Output Power
RF Port Return Loss
Output P1dB
Carrier Feedthrough
Sideband Suppression
IM3 Suppression
Broadband Noise Floor
Specification
Typ.
Fo
-+
Parameter
D
GaAs HBT
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS compliant per EU directive 2002/95. This package is also manufactured
with green molding compounds that contain no antimony trioxide nor
halogenated fire retardants.
g
ew
Optimum Technology
Matching® Applied
es
ig
n
The STQ-1016 uses silicon germanium (SiGe) device technology and delivers a typical output
power of -9dBm with greater than 60dB IM3 suppression. A digital input shut-down feature is
included that, when enabled, attenuates the output by 60dB. The device is packaged in an
industry standard 16-pin TSSOP with exposed paddle for superb RF and thermal ground.
+3
34
58
-9
>10, 250 to
1000MHz
>15, 275 to
500MHz
+6
-38
42
62
-154
Output P1dB +5dBm
Very Low Noise Floor,
-154dBm/Hz Typical
Wide Baseband Input, DC to
500MHz
Superb Phase Accuracy and
Amplitude Balance,
±0.5°C/±0.2dB
Low LO Drive Requirement,
-5dBm
13
RFP
12
RFN
Applications
11
VEE
10
Cellular/PCS/GSM/CDMA Transceivers
VCC
9
BBIN
TETRA
GMSK, QPSK, QAM, SSB Mod.
Max.
1000
-7
-30
-150*
Unit
MHz
dBm
dB
dBm
dBm
dB
dB
dBm/Hz
Condition
(Baseband input level 600mVP-P differential)
Matched to 50: using schematic shown on page
5
(Baseband input level 3.8VP-P differential typical)
2-tone BB input @ 600mVP-P diff. per tone, 20kHz
spacing
Baseband inputs tied to 1.9VDC, -20MHz offset
from carrier
Quadrature Phase Error
-2.0
±0.5
+2.0
°C
I/Q Amplitude Balance
-0.20
±0.05
+0.20
dB
Supply Voltage
+4.75
+5.00
+5.25
V
Supply Current
80
86
mA
Device Thermal Resistance
25
°C/W
Junction to case
Test Conditions: VCE =2.7V, IQ =11mA Typ. (unless otherwise noted), TL =25°C. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm.
[1] Data with Application Circuit.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS130709
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 8
STQ-1016(Z)
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (VCC)
6.0
VDC
LO, RF Input (LOP, LON, RFP, RFN)
+10
dBm
Baseband Min Input Voltage (BBIP,
BBIN, BBQP BBQN)
0
VDC
Baseband Max Input Voltage (BBIP,
BBIN, BBQP, BBQN)
3
VDC
Operating Temperature
-40 to +85
°C
Storage Temperature
-65 to +150
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Min.
Specification
Typ.
Max.
Baseband Modulation Input:
TA =25°C
DC
500
Baseband Input Resistance
Baseband Input Capacitance
4.4
0.5
LO Input: TA =25°C
250
-8
Miscellaneous: TA =25°C
45
60
11.9
5.2
Fo
Shut-Down Supply Current
Shut-Down Attenuation
Shut-Down Pin Resistance
Shut-Down Pin Capacitance
Shut-Down Control Voltage Thresholds
-5
>10, 250 to 1000,
>15, 275 to 500
rN
LO Frequency
LO Drive Level
LO Port Return Loss
3.75
MHz
ew
Baseband Frequency Input
Unit
1000
-2
60
VCC
Condition
D
Parameter
es
ig
n
*Note: Load condition1, ZL =50:. Load condition2, ZL =10:1 VSWR.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD