SXA-389B

SXA-389B(Z) SXA-389B(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400 MHz to 2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Optimum Technology Matching® Applied  GaAs MESFET InGaP HBT SiGe BiCMOS dBm Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT 50 45 40 35 30 25 20 15 10 5 0 OIP3  Gain Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number) Lower RTH for increased MTTF 108 Hours at TLead =85°C On-Chip Active Bias Control, Single 5V Supply Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz  High P1dB :+25dBm Typ.  High Gain:+18.5dB at 850MHz P1dB  Efficient: Consumes Only 575mW Applications 850 MHz InP HBT   Typical OIP3, P1dB, Gain GaAs HBT  1960 MHz 2140 MHz 2450 MHz  W-CDMA, PCS, Cellular Systems  Multi-Carrier Applications RF MEMS LDMOS Parameter Min. Small Signal Gain 12.5 Output Power at 1dB Compression 24.0 Output Third Order Intercept Point 39.0 Noise Figure Input VSWR Operating Dissipated Power Device Operating Current Thermal Resistance 90 Specification Typ. 18.4 13.6 13.5 12.8 25.0 25.0 25.0 25.0 41.0 43.0 42.0 41.0 4.5 4.8 5.0 5.7 1.2:1 1.3:1 1.2:1 1.2:1 575.0 115 70 Max. 15.0 6.3 Unit dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dB dB dB dB 2.0:1 135 mW mA °C/W Condition 850MHz 1960MHz 2140MHz 2450MHz 850MHz 1960MHz 2140MHz 2450MHz 850MHz, POUT per tone=+11dBm, Tone Spacing=1MHz 1960MHz 2140MHz 2450MHz 850MHz 1960MHz 2140MHz 2450MHz 850MHz 1960MHz 2140MHz 2450MHz VCC =5V junction to backside RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS100712 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 10 SXA-389B(Z) Absolute Maximum Ratings Parameter Max Device Current (lD) Max Device Voltage (VCC) Max RF Input Power Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temperature ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating Unit 240 mA 6 V 100 mW 1500 mW 165 °C -40 to + 85 °C 150 °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 1C MSL 2 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD