SXB-2089Z

SXB2089Z SXB2089Z 5MHz to 2500MHz Medium Power InGaP/GaAs HBT Amplifier 5MHz to 2500MHz MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXB2089Z amplifier is a high linearity InGaP/GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5MHz to 2500MHz Cellular, ISM, WLL, PCS, and W-CDMA applications. It’s high linearity makes it an ideal choice for multi-carrier as well as digital applications.      Optimum Technology Matching® Applied  GaAs HBT GaAs MESFET  InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT 50 45 40 35 30 25 20 15 10 5 0 IP3  P1dB P1dB Gain 880 MHz GaN HEMT IP3  P1dB Gain High Linearity/ACP Performance Robust 2000V ESD, Class 2 SOT-89 Package Applications Typical IP3, P1dB, Gain IP3 High OIP3:+43dBm at 1960MHz P1dB:24dBm Gain 1960 MHz  PA Driver Amplifier IF Amplifier Cellular, PCS, ISM, WLL, W-CDMA 2140 MHz RF MEMS Parameter Min. Small Signal Gain 21.5 15.5 Input VSWR Output Power at 1dB Compression 23.0 Third Order Intercept Point 38.0 40.0 Noise Figure Channel Power IS-95 Thermal Resistance Device Operating Current 120 Specification Typ. 25.0 23.0 17.0 17.0 1.1 1.4 1.6 1.3 24.0 24.5 24.5 40.0 41.0 43.0 43.0 4.9 4.5 4.7 4.2 16.0 16.3 15.5 15.6 51.3 135 Max. 24.5 21.5 Unit dBm dBm dBm dBm 2.5 6.0 150 dBm dBm dBm dBm dBm dBm dBm dB dB dB dB dBm dBm dBm dBm °C/W mA Condition 450MHz 880MHz 1960MHz 2140MHz 450MHz 880MHz 1960MHz 2140MHz 450MHz 880MHz and 1960MHz 2140MHz 450MHz 880MHZ 1960MHz 2140MHz 450MHz 880MHz 1960MHz 2140MHz 450MHz, IS-95, -55dBc ACP 880MHz, IS-95, -55dBc ACP 1960MHz, IS-95, -55dBc ACP 2140MHz, WCDMA, -50dBc ACP junction - lead VS =8v, RBIAS =20, VDEVICE =5.2V Test Conditions: TA =25°C, Z0 =50POUT per tone=+11dBm, ToneSpacing=1MHz RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS110610 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 SXB2089Z Absolute Maximum Ratings Parameter Device Current (IDQ) Rating Unit 190 mA Device Voltage (VD) 6 V RF Input Power 20 dBm +150 °C -40 to +85 °C Junction Temp (TJ) Operating Temp Range (TL) Storage Temp +150 °C Operating Dissipated Power (quiescent) 1.0 W ESD Rating - Human Body Model (HBM) Class 2 Moisture Sensitivity Level MSL 2 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and