SZA-5044(Z)
SZA-5044(Z)
4.9GHz to
5.9GHz 5 V
Power Amplifier
4.9GHz to 5.9GHz 5V POWER AMPLIFIER
Package: QFN, 4mmx4mm
Product Description
Features
RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT
amplifier is made with InGaP on GaAs device technology and fabricated with
MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.11a equipment in the
4.9GHzto5.9GHz band for a 5V supply. Optimized on-chip impedance matching circuitry provides a 50Ω nominal RF input impedance. A single external output matching circuit covers the entire 4.9GHzto5.9GHz band simultaneously. The external
output match allows for load line optimization for other appliOptimum Technology cations or optimized performance over narrower bands. This
Matching® Applied
product is available in a RoHS Compliant and Green package
GaAs HBT
with matte tin finish, designated by the “Z” package suffix.
GaAs MESFET
SiGe BiCMOS
Output Return Loss >11dB for
Linear Tune
On-Chip Output Power Detector
P1dB =30dBm at 5V
Si BiCMOS
High Gain=33dB
InGaP HBT
802.11a 54Mb/s Class AB Performance POUT =22dBm at 3%
EVM, 5V, 343mA
SiGe HBT
Simultaneous 4.9GHz to 5.9GHz
Performance
Robust - Survives RF Input Power
=+15dBm
Power Up/Down Control 1000
V
Storage Temperature Range
Operating Junction Temperature (TJ)
ESD Rating - Human Body Model
(HBM)
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD
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