TGA4531

TGA4531 K-Band High Linearity Power Amplifier Key Features • • • • • • • • • Measured Performance Frequency Range: 17 - 24 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 23 dB TOI: 40 dBm NF: 6 dB Return Loss: -15 dB Bias: Vd = 7 V, Id = 720 mA, Vg = -0.65 V Typical Technology: 3MI 0.25 um mmw Power pHEMT Chip Dimensions: 2.51 x 1.45 x 0.1 mm Primary Applications Bias conditions: Vd = 7 V, Id = 720 mA, Vg = -0.65 V Typical • • Point-to-Point Radio K-Band Sat-Com Product Description The TriQuint TGA4531 is High Linearity Power Amplifier for K-band applications. The part is designed using TriQuint’s proven standard 0.25 um gate Power pHEMT production process. The TGA4531 provides a nominal 32 dBm of output power at an input power level of 15 dBm with a small signal gain of 23 dB. Nominal TOI is 40 dBm and noise figure is 6 dB. The part is ideally suited for low cost emerging markets such as Point-to-Point Radio, and K-band Satellite Communications. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Table I Absolute Maximum Ratings 1/ Symbol Parameter Vd-Vg Value Drain to Gate Voltage Vd Drain Voltage Vg Gate Voltage Range Id Drain Current Ig Gate Current Range Pin Tchannel Notes 10.5 V 8V 2/ -2.5 to 0 V 1.25 A 2/ -7 to 32 mA Input Continuous Wave Power 26 dBm Channel Temperature 200 °C 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Operating Conditions Symbol Value Vd Drain Voltage 7V Id Drain Current 720 mA Drain Current under RF Drive 1.12 A Gate Voltage -0.65 V Id_Drive Vg 1/ Parameter 1/ See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Table III RF Characterization Table Bias: Vd = 7 V, Id = 720 mA, Vg = -0.65 V Typical SYMBOL PARAMETER TEST CONDITIONS MIN NOMINAL 21 23 MAX UNITS Gain Small Signal Gain F = 17.7 – 23.6 GHz IRL Input Return Loss F = 17.7 – 23.6 GHz -15 -10 dB ORL Output Return Loss F = 17.7 – 23.6 GHz -15 -10 dB Psat Saturated Output Power F = 17.7 – 23.6 GHz P1dB Output Power @ 1dB Compression F = 17.7 – 23.6 GHz TOI Output TOI F = 17.7 – 23.6 GHz NF Noise Figure Gain Temperature Coefficient 31 dB 32 dBm 31 dBm 40 dBm F = 17.7 – 23.6 GHz 6 dB F = 17.7 – 23.6 GHz -0.04 dB/°C 37 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Maximum Power Dissipation Tbaseplate = 70 °C Pd = 10 W Tchannel = 199 °C Thermal Resistance, θjc Vd = 7 V Id = 720 mA Pd = 5.04 W Tbaseplate = 70 ºC θjc = 12.9 °C/W Tchannel = 135 °C Tm = 3.8E+6 Hrs Thermal Resistance, θjc Under RF Drive Vd = 7 V Id = 1.12 A Pout = 32 dBm Pd = 6.25 W Tbaseplate = 70 ºC θjc = 12.9 °C/W Tchannel = 150 °C Tm = 1.0E+6 Hrs Mounting Temperature 30 Seconds Storage Temperature 320 °C -65 to 150 °C Median Lifetime (Tm) vs. Channel Temperature 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Measured Data Bias conditions: Vd = 7 V, Id = 720 mA, Vg = -0.65 V Typical 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Measured Data Bias conditions: Vd = 7 V, Id = 720 mA, Vg = -0.65 V Typical 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Measured Data Bias conditions: Vd = 7 V, Id = 720 mA, Vg = -0.65 V Typical 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A Measured Data TGA4531 Bias conditions: Vd = 7 V, Id = 720 mA, Vg = -0.65 V Typical 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Measured Data Bias conditions: Vd = 7 V, Id = 720 mA, Vg = -0.65 V Typical 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Measured Data Bias conditions: Varies 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A Measured Data TGA4531 Bias conditions: Varies 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Electrical Schematic Vd_Top Vd_Bottom 3 5 TGA4531 RF Input 1 4 2 RF Output 6 Vg_Top Vg_Bottom Bias Procedures Bias-up Procedure Bias-down Procedure Vg set to -1.5 V Turn off RF supply Vd_set to +7 V Reduce Vg to -1.5V. Ensure Id ~ 0 mA Adjust Vg more positive until quiescent Id is 720 mA. This will be ~ Vg = -0.65 V Turn Vd to 0 V Apply RF signal to input Turn Vg to 0 V 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Mechanical Drawing Units: millimeters Thickness: 0.10 Die x,y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad #1 RF In 0.100 x 0.200 Bond Pad #4 RF Out 0.100 x 0.200 Bond Pad #2 Vg_Top 0.100 x 0.100 Bond Pad #5 Vd_Bottom 0.180 x 0.100 Bond Pad #3 Vd_Top 0.180 x 0.100 Bond Pad #6 Vg_Bottom 0.100 x 0.100 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A TGA4531 Recommended Assembly Diagram -0.65V Typical 7V, 720mA Vg Vd 15Ω 15Ω 1 μF 1 μF 0.01 uF RF IN 100 pF 0.01 uF 100 pF RF OUT 100 pF 0.01 uF Vd 1 μF Vg can be biased from either side. Vd must be biased from both sides. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A 14 TGA4531 Assembly Notes Component placement and adhesive attachment assembly notes: • Vacuum pencils and/or vacuum collets are the preferred method of pick up. • Air bridges must be avoided during placement. • The force impact is critical during auto placement. • Organic attachment (i.e. epoxy) can be used in low-power applications. • Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: • Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum. • An alloy station or conveyor furnace with reducing atmosphere should be used. • Do not use any kind of flux. • Coefficient of thermal expansion matching is critical for long-term reliability. • Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: • Thermosonic ball bonding is the preferred interconnect technique. • Force, time, and ultrasonics are critical parameters. • Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. Ordering Information Part Package Style TGA4531 GaAs MMIC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 15 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Aug 2010 © Rev A