Databook.fxp 1/13/99 2:09 PM Page B-9
01/99
B-9
2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers ¥ Ultra-High Input Impedance Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175°C)
– 40 V 50 mA 300 mW 2 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current 2N4117, 2N4118, 2N4119 2N4117A, 2N4118A, 2N4119A Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) 2N4117, 2N4118, 2N4119 2N4117A, 2N4118A, 2N4119A Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance gfs gos Ciss Crss V(BR)GSS IGSS VGS(OFF) IGSS
2N4117 2N4117A Min – 40 – 10 –1 – 0.6 0.03 0.015 – 1.8 0.09 0.09 Max
2N4118 2N4118A Min – 40 – 10 –1 –1 0.08 0.08 –3 0.24 0.24 Max
2N4119 2N4119A Min – 40 – 10 –1 –2 0.2 0.2 –6 0.6 0.6 Max Unit V pA pA V mA mA
Process NJ01 Test Conditions IG = – 1µA, VDS = ØV VGS = – 20V, VDS = ØV VGS = – 20V, VDS = ØV VDS = 10V, ID = 1 nA VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV
70
210 3 3 1.5
80
250 5 3 1.5
100
330 10 3 1.5
µS µS pF pF
VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/13/99 2:09 PM Page B-11
01/99
B-11
2N4338, 2N4339
N-Channel Silicon Junction Field-Effect Transistor
¥ ¥ ¥ ¥ Audio Amplifiers Small Signal Amplifiers Voltage-Controlled Resistors Current Limiters & Regulators
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175°C)
– 50 V 50 mA 300 mW 2mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure rds(on) gfs gos Ciss Crss NF V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF)
2N4338 Min – 50 – 100 – 100 – 0.3 0.2 –1 0.6 0.05 (– 5) Max
2N4339 Min – 50 – 100 – 100 – 0.6 – 1.8 0.5 1.5 0.05 (– 5) Max Unit V pA nA V mA nA V
Process NJ16 Test Conditions IG = – 1 µA, VDS = ØV VGS = – 30V, VDS = ØV VGS = – 30V, VDS = ØV VDS = 15V, ID = 0.1 µA VDS = 15V, VGS = ØV VDS = 15V, VGS = ( ) TA = 150°C
2500
1700
Ω µS µS pF pF dB
VGS = ØV, ID = Ø A VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV RG = 1 MΩ, BW = 200 Hz
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
600 1800 800 2400 5 7 3 1 15 7 3 1
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/13/99 2:09 PM Page B-12
B-12
01/99
2N4340, 2N4341
N-Channel Silicon Junction Field-Effect Transistor
¥ Small Signal Amplifiers ¥ Current Regulators ¥ Voltage-Controlled Resistors
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175°C)
– 50 V 50 mA 300 mW 2mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure rds(on) gfs gos Ciss Crss NF V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF)
2N4340 Min – 50 – 100 – 100 –1 1.2 –3 3.6 0.05 (– 5) Max
2N4341 Min – 50 – 100 – 100 –2 3 –6 9 Max Unit V pA nA V mA
Process NJ16 Test Conditions IG = – 1 µA, VDS = ØV VGS = – 30V, VDS = ØV VGS = – 30V, VDS = ØV VDS = 15V, ID = 0.1 µA VDS = 15V, VGS = ØV VDS = 15V, VGS = ( ) TA = 150°C
0.07 nA (– 10) V
1500
800
Ω µS µS pF pF dB
VGS = ØV, ID = Ø A VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV RG = 1 MΩ, BW = 200 Hz
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
1300 3000 2000 4000 30 7 3 1 60 7 3 1
TOÐ18 Package
Dimensions in Inches (mm)
Surface Mount
SMP4340, SMP4341
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 12:00 PM Page B-17
01/99
B-17
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range
– 40 V 50 mA 300mW 1.7 mW/°C – 65°C to + 200°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure gfs gos Ciss Crss eN ¯ V(BR)GSS IGSS VGS(OFF) IDSS
2N4867 2N4867A Min – 40 – 0.25 – 0.25 – 0.7 0.4 –2 1.2 Max
2N4868 2N4868A Min – 40 – 0.25 – 0.25 –1 1 –3 3 Max
2N4869 2N4869A Min – 40 – 0.25 – 0.25 – 1.8 2.5 –5 7.5 Max Unit V nA µA V mA
Process NJ16 Test Conditions IG = – 1µA, VDS = ØV VGS = – 30V, VDS = ØV VGS = – 30V, VDS = ØV VDS = 20V, ID = 1 µA VDS = 20V, VGS = ØV TA = 150°C
700
2000 1.5 25 5 20 10 1
1000
3000 4 25 5 20 10 1
1300
4000 10 25 5 20 10 1
µS µS pF pF
nV/√HZ nV/√HZ
VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 1 kHz f = 1 kHz
NF
dB
(2N4867, 68, 69) RG = 20 kΩ (2N4867A, 68A, 69A) RG = 5 kΩ
TOÐ72 Package
Dimensions in Inches (mm)
Surface Mount
SMP4867, SMP4867A, SMP4868, SMP4868A, SMP4869, SMP4869A
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/13/99 2:09 PM Page B-25
01/99
B-25
2N6451, 2N6452
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers ¥ Low-Noise, High Gain Amplifiers ¥ Low-Noise Preamplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
2N6451 2N6452 – 20 V – 25 V – 20 V – 25 V 10 mA 10 mA 360 mW 360 mW 2.88 mW/°C 2.88 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS
2N6451 Min – 20 – 0.1 Max
2N6452 Min – 25 – 0.5 Max Unit V nA nA µA –1 µA V mA
Process NJ132L Test Conditions IG = – 1 µA, VDS = ØV VGS = – 10V, VDS = ØV VGS = – 15V, VDS = ØV VGS = – 10V, VDS = ØV VGS = – 15V, VDS = ØV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = ØV TA = 125°C TA = 125°C
Gate Reverse Current
IGSS
– 0.2 – 0.5 – 3.5 – 0.5 – 3.5 5 20 5 20
Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure
VGS(OFF) IDSS
| Yfs | | Yos | Ciss Crss eN ¯ NF
15
30 50 25 5 5 3 1.5
15
30 50 25 5
mS mS µS µS pF pF pF pF
VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA RG = 10 kΩ
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 10 kHz f = 1 kHz f = 10 Hz
10 nV/√Hz 8 2.5
nV/√Hz
dB
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
Databook.fxp 1/13/99 2:09 PM Page B-26
B-26
01/99
2N6453, 2N6454
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers ¥ Low-Noise, High Gain Amplifiers ¥ Low-Noise Preamplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
2N6453 2N6454 – 20 V – 25 V – 20 V – 25 V 10 mA 10 mA 360 mW 360 mW 2.88 mW/°C 2.88 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS
2N6453 Min – 20 – 0.1 Max
2N6454 Min – 25 – 0.5 Max Unit V nA nA µA –1 µA V mA
Process NJ132L Test Conditions IG = – 1 µA, VDS = ØV VGS = – 10V, VDS = ØV VGS = – 15V, VDS = ØV VGS = – 10V, VDS = ØV VGS = – 15V, VDS = ØV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = ØV TA = 125°C TA = 125°C
Gate Reverse Current
IGSS
– 0.2 – 0.75 – 5 – 0.75 – 5 15 50 15 50
Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure
VGS(OFF) IDSS
| Yfs | | Yos | Ciss Crss eN ¯ NF
mS 20 40 100 25 5 5 3 1.5 20 40 100 25 5 8 2.5 mS µS µS pF pF pF pF nV/√Hz dB 10 nV/√Hz
VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 15 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA RG = 10 kΩ
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 10 kHz f = 1 kHz f = 10 Hz
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-54
B-54
01/99
J201, J202
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers ¥ General Purpose Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
– 40 V 50 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage g fs g os Ciss Crss eN ¯ V(BR)GSS IGSS IG VGS(OFF) IDSS
J201 Min – 40 – 100 – 10 – 0.3 0.2 – 1.5 1 – 0.8 0.9 Typ Max Min – 40
J202 Typ Max Unit V – 100 – 10 –4 4.5 pA pA V mA
Process NJ16 Test Conditions IG = – 1µA, VDS = ØV VGS = – 20V, VDS = ØV VDG = 20V, ID = IDSS(min) VDS = 20V, ID = 10 nA VDSS = 15V, VGS = ØV
500 1 4 1 5
1000 3.5 4 1 5
µS µS pF pF
nV/√Hz
VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 10V, VGS = ØV
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ201, SMPJ202
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-55
01/99
B-55
J203, J204
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers ¥ General Purpose Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
– 40 V 50 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage g fs g os Ciss Crss eN ¯ V(BR)GSS IGSS IG VGS(OFF) IDSS
J203 Min – 40 – 100 – 10 –2 4 – 10 20 – 0.3 0.2 Typ Max Min – 25
J204 Typ Max Unit V – 100 – 10 –2 1.2 3 pA pA V mA
Process NJ16 Test Conditions IG = – 1µA, VDS = ØV VGS = – 20V, VDS = ØV VDG = 20V, ID = IDSS(min) VDS = 20V, ID = 10 nA VDS = 15V, VGS = ØV
1500 10 4 1 5
500
1500 2.5 4 1 10
µS µS pF pF
nV/√Hz
VDS = 20V, VGS = Ø V VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 10V, VGS = ØV
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ203, SMPJ204
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-56
B-56
01/99
J210, J211
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers ¥ General Purpose Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
– 25 V 10 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage g fs g os Ciss Crss eN ¯ V(BR)GSS IGSS IG VGS(OFF) IDSS
J210 Min – 25 – 100 – 10 –1 2 –3 15 – 2.5 7 Typ Max Min – 25
J211 Typ Max Unit V – 100 – 10 – 4.5 20 pA pA V mA
Process NJ26L Test Conditions IG = – 1µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 20V, ID = 1 mA VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV
4000
12000 6000 150 4 1 10 4 1 10
12000 200
µS µS pF pF
nV/√Hz
VDS = 15V, VGS = Ø V VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ210, SMPJ211
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-57
01/99
B-57
J212
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifier ¥ General Purpose Amplifier
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
– 25 V 10 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs
J212 Min V(BR)GSS IGSS IG VGS(OFF) IDSS –4 15 – 10 –6 40 – 25 – 100 Typ Max Unit V pA pA V mA
Process NJ26L Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 20V, ID = 1 mA VDS = 15V, ID = 1 nA VDS = 15V, VGS = Ø V
7000 4 1 10
12000 200
µS µS pF pF
nV/√Hz
VDS = 15V, VGS = Ø V VDS = 15V, VGS = Ø V VDS = 15V, VGS = Ø V VDS = 15V, VGS = Ø V VDS = 15V, VGS = Ø V
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz
Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage
gos Ciss Crss eN ¯
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ212
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-58
B-58
01/99
J230, J231
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
– 40 V 50 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage g fs g os Ciss Crss eN ¯ V(BR)GSS IGSS IG VGS(OFF) IDSS
J230 Min – 40 – 250 –2 – 0.5 0.7 –3 3 – 1.5 2 Typ Max Min – 40
J231 Typ Max Unit V – 250 –2 –5 6 pA pA V mA
Process NJ16 Test Conditions IG = – 1µA, VDS = ØV VGS = – 30V, VDS = ØV VDS = 20V, ID = ØV VDS = 20V, ID = 1 µA VDS = 20V, VGS = ØV
1000 1.5 4 1 8 2
3500
1500 3 4 1
4000
µS µS pF pF
VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = ØV VDS = 10V, VGS = ØV VDS = 10V, VGS = ØV
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 1 kHz
30
8 2
30
nV/√Hz nV/√Hz
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ230, SMPJ231
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-59
01/99
B-59
J232
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifier
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating
– 40 V 50 mA 360 mW 3.27 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs
J232 Min V(BR)GSS IGSS IG VGS(OFF) IDSS –3 5 –2 –6 10 – 40 – 250 Typ Max Unit V pA pA V mA
Process NJ16 Test Conditions IG = – 1 µA, VDS = ØV VGS = – 30V, VDS = ØV VDS = 20V, ID = ØV VDS = 20V, ID = 1 µA VDS = 20V, VGS = Ø V
2500 5 4 1 20 6
5000
µS µS pF pF
VDS = 20V, VGS = Ø V VDS = 20V, VGS = Ø V VDS = 20V, VGS = Ø V VDS = 20V, VGS = Ø V VDS = 10V, VGS = Ø V VDS = 10V, VGS = Ø V
f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 10 Hz f = 1 kHz
Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage
gos Ciss Crss eN ¯
30
nV/√Hz nV/√Hz
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMPJ232
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-21
01/99
B-21
2N5460, 2N5461, 2N5462
P-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers ¥ General Purpose Amplifiers
Absolute maximum ratings at 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 40 V – 10 mA 310 mW 2.8 mW/°C
At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Drain Source ON Resistance
Common Source Forward Transadmittance
2N5460 Min V(BR)GSS IGSS VGS(OFF) VGS IDSS –1 –5 0.75 0.8 40 5 1 6 4.5 Max
2N5461 Min 40 5 1 1 0.8 –2 7.5 4.5 Max
2N5462 Min 40 5 1 1.8 9 Max Unit V nA µA V V V 1.5 6 – 16 V mA –4
Process PJ32 Test Conditions IG = 10µA, VDS = ØV VGS = 20V, VDS = ØV VGS = 20V, VDS = ØV VDS = – 15V, ID = – 1 µA VDS = – 15V, ID = – 100 µA VDS = – 15V, ID = – 200 µA VDS = – 15V, ID = – 400 µA VDS = – 15V, VGS = ØV TA = 100°C
–9
rds(on) | Yfs | | Yos | Ciss Crss eN ¯ NF 1
2 4 75 7 2 2.5 115 1.5
0.8 5 75 7 2 2.5 115 2
0.4 6 75 7 2 2.5
kΩ mS µS pF pF dB
VGS = ØV, ID = Ø A VDS = – 15V, VGS = Ø V VDS = – 15V, VGS = Ø V VDS = – 15V, VGS = ØV VDS = – 15V, VGS = ØV VDS = – 15V, VGS = ØV VDS = – 15V, VGS = ØV, RG = 1MΩ
f = 1 kHz f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 100 Hz, BW = 1 Hz f = 100 Hz
Common Source Output Admittance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage Noise Figure
115 nV/√Hz
TOÐ226AA Package
Dimensions in Inches (mm)
Surface Mount
SMP5460, SMP5461, SMP5462
Pin Configuration
1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page G-4
G-4
01/99
TO-71 Package
Dimensions in Inches (mm)
0.210 (5.34) 0.170 (4.32) 0.230 (5.84) 0.195 (4.96) 0.209 (5.31) 0.175 (4.44) Dia. Dia. 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min
6 Leads - Dia. 0.019 (0.483) 0.016 (0.406) 3
0.100 (2.54) - Dia. Typ. 5 2 6 7 1 45° Bottom View 0.048 (1.22) 0.028 (0.71) 0.046 (1.17) 0.036 (0.91)
TO-72 Package
Dimensions in Inches (mm)
0.210 (5.33) 0.170 (4.32) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min
4 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 2
0.100 (2.54) - Dia. Typ. 3 4 1 45° Bottom View 0.048 (1.22) 0.028 (0.71) 0.046 (1.17) 0.036 (0.91)
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page G-2
G-2
01/99
TO-18 Package
Dimensions in Inches (mm)
0.210 (5.33) 0.170 (4.32) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min
3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 2
0.100 (2.54) - Dia. Typ. 3 0.048 (1.22) 0.028 (0.71) 45° Bottom View 0.046 (1.17) 0.036 (0.91)
1
TO-39 Package
Dimensions in Inches (mm)
Alternate (Preferred) version cap height = Max 0.185 (4.70), Min 0.165 (4.19) 0.370 (9.40) 0.335 (8.51) 0.350 (8.89) 0.315 (8.00) Dia. Dia.
0.260 (6.60) 0.240 (6.10) 3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 2 1 45° Bottom View 0.210 (5.34) Dia. 0.190 (4.82) Dia. 0.050 (1.14) 0.029 (0.74) 0.034 (0.86) 0.028 (0.71)
3
0.125 (3.18) Max. 0.009 (0.23) Min. 0.750 (19.05) Max. 0.500 (12.70) Min
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page G-6
G-6
01/99
TO-226AA Package (TO-92)
Dimensions in Inches (mm)
0.210 (5.33) 0.170 (4.32) 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min.
3 Leads 0.022 (0.55) 0.014 (0.36) 3 2 1
0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) Bottom View 0.022 (0.55) 0.014 (0.36) 0.105 (2.66) 0.095 (2.42)
Seating Plane 0.750 (19.05) Max. 0.500 (12.70) Min.
TO-226AB Package (TO-92/18)
Dimensions in Inches (mm)
0.210 (5.33) 0.170 (4.32) 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min.
3 Leads 0.022 (0.55) 0.014 (0.36) 3 2 1
0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) 0.052 (1.33) 0.047 (1.21) 0.022 (0.55) 0.014 (0.36)
Seating Plane 0.750 (19.05) Max. 0.500 (12.70) Min.
0.105 (2.66) 0.095 (2.42) Bottom View
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page G-7
01/99
G-7
TO-236AB Package (SOT-23)
Dimensions in Inches (mm)
0.021 (0.54) 0.015 (0.38) 3 0.098 (2.64) 0.055 (1.40) 0.083 (2.10) 0.047 (1.20) 1 0.022 (0.55) 0.017 (0.44) 0.120 (3.05) 0.105 (2.67) 0.004 (0.10) 0.001 (0.02) 2 0.079 (2.00) 0.071 (1.80) 0.040 (1.02) 0.031 (0.79) 0.010 (0.25) 0.005 (0.13) 0.0059 (0.15) 0.0035 (0.089) 8°
0.041 (1.12) 0.035 (0.89)
SOIC-8 Package
Dimensions in Inches (mm)
8765 0.158 (4.01) 0.244 (6.20) 0.150 (3.81) 0.228 (5.79) 1234
0.050 (1.27) 0.022 (0.56) 0.018 (0.046
0.018 (0.46 0.014 (0.36) 0.059 (1.50) 0.049 (1.24)
0.015 (0.37) Min. 0.069 (1.75) 0.053 (1.35)
45°
0.197 (5.00) 0.188 (4.78)
0.009 (0.23) 0.007 (0.18)
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375
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