2N4391

Databook.fxp 1/14/99 11:30 AM Page B-13 01/99 B-13 2N4391, 2N4392, 2N4393 N-Channel Silicon Junction Field-Effect Transistor ¥ Low On Resistance Analog Switches ¥ Choppers ¥ Commutators Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 40 V 50 mA 1.8 W 12 mW/°C At 25°C free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS 2N4391 Min – 40 – 100 – 200 –4 50 – 10 1 150 Max 2N4392 Min – 40 – 100 – 200 –2 25 –5 1 75 Max 2N4393 Min – 40 – 100 – 200 – 0.5 5 –3 1 30 100 200 Max Unit V pA nA V V mA pA nA pA nA pA nA 0.4 V V V 100 Ω Ω pF pF pF pF Process NJ132 Test Conditions IG = – 1µA, VDS = ØV VGS = – 20V, VDS = ØV VGS = – 20V, VDS = ØV VDS = – 20V, ID = 1 nA IG = 1 mA, VDS = ØV VDS = 20V, VGS = ØV VDS = 20V, VGS = – 5V VDS = 20V, VGS = – 5V VDS = 20V, VGS = – 7V VDS = 20V, VGS = – 7V VDS = 20V, VGS = – 12V VDS = 20V, VGS = – 12V VGS = ØV, ID = 3 mA VGS = ØV, ID = 6 mA VGS = ØV, ID = 12 mA VGS = ØV, ID = 1 mA TA = 150°C TA = 150°C TA = 150°C TA = 150°C Drain Cutoff Current ID(OFF) 100 200 100 200 Drain Source ON Voltage Static Drain Source ON Resistance Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time VDS(ON) 0.4 rDS(ON) 30 0.4 60 rds(on) Ciss Crss 30 14 60 14 3.5 100 14 3.5 VGS = ØV, ID = ØA VDS = 20V, VGS = ØV VDS = ØV, VGS = – 5V VDS = ØV, VGS = – 7V VDS = ØV, VGS = – 12V f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz f = 1 kHz 3.5 td(on) tr td(off) tf 15 5 20 15 15 5 35 20 15 5 50 30 ns ns ns ns VDD = 10V, VGS(ON) = ØV 2N4391 2N4392 2N4393 ID(ON) 12 6 –7 3 –5 mA V VGS(OFF) – 12 TOÐ18 Package See Section G for Outline Dimensions Surface Mount SMP4391, SMP4392, SMP4393 Pin Configuration 1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:30 AM Page B-15 01/99 B-15 2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861 N-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Dissipation Power Derating Continuous Forward Gate Current 2N4856, 2N4857, 2N4858 – 40 V – 40 V 1.8 W 10 mW/°C 50 mA 2N4859, 2N4860, 2N4861 – 30 V – 30 V 1.8 W 10 mW/°C 50 mA At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage 2N4856, 2N4857, 2N4858 2N4859, 2N4860, 2N4861 Gate Reverse Current 2N4856, 2N4857, 2N4858 Gate Reverse Current 2N4859, 2N4860, 2N4861 Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Drain Source ON Voltage Dynamic Electrical Characteristics Common Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time td(on) rds(on) Ciss Crss V(BR)GSS 2N4856 2N4859 Min Max – 40 – 30 IGSS IGSS VGS(OFF) IDSS ID(OFF) VDS(ON) –4 50 250 500 0.75 (20) – 250 – 500 – 250 – 500 – 10 2N4857 2N4860 Min Max – 40 – 30 – 250 – 500 – 250 – 500 –2 20 –6 100 250 500 0.5 (10) 2N4858 2N4861 Min Max – 40 – 30 – 250 – 500 – 250 – 500 – 0.8 8 –4 80 250 500 0.5 (5) Unit V V pA nA pA nA V mA pA nA V (mA) Process NJ132 Test Conditions IG = – 1 µA, VDS = ØV IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VGS = – 20V, VDS = ØV VGS = – 15V, VDS = ØV VGS = – 15V, VDS = ØV VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = – 10V VDS = 15V, VGS = – 10V VGS = ØV, ID = ( ) TA = 150°C TA = 150°C TA = 150°C 25 18 8 40 18 8 60 18 8 Ω pF pF VGS = ØV, ID = Ø A VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 kHz f = 1 MHz f = 1 MHz 6 (20) [–10] 3 (20) [–10] 25 (20) [–10] 6 (10) [– 6] 4 (10) [– 6] 50 (10) [– 6] 10 (5) [– 4] 10 (5) [– 4] 100 (5) [– 4] ns (mA) [V] ns (mA) [V] ns (mA) [V] VDD = 10V, VGS = ØV ID(ON) = ( ) VGS(OFF) = [ ] Rise Time tr Turn OFF Delay Time td(off) (2N4856, 2N4859) RL = 465 Ω (2N4857, 2N4860) RL = 953 Ω (2N4858, 2N4861) RL = 1910 Ω TOÐ18 Package See Section G for Outline Dimensions Surface Mount SMP4856, SMP4857, SMP4858, SMP4859, SMP4860, SMP4861 Pin Configuration 1 Source, 2 Drain, 3 Gate &Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-45 01/99 B-45 IFN5432, IFN5433, IFN5434 N-Channel Silicon Junction Field-Effect Transistor ¥ Analog Low On Resistance Switches ¥ Choppers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 25 V 100 mA 300 mW 2.4 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Drain Source ON Voltage Static Drain Source ON Resistance Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf rds(on) Ciss Crss V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) VDS rDS(ON) IFN5432 Min – 25 – 200 – 200 –4 150 200 200 50 2 5 – 10 Max IFN5433 Min – 25 – 200 – 200 –3 100 200 200 70 7 –9 Max IFN5434 Min – 25 – 200 – 200 –1 30 200 200 100 10 –4 Max Unit V pA nA V mA pA nA mV Ω Ω pF pF Process NJ903 Test Conditions IG = – 1µA, VDS = ØV VGS = – 15V, VDS = ØV VGS = – 15V, VDS = ØV VDS = 5V, IG = 3 nA VDS = 15V, VGS = ØV VDS = 5V, VGS = – 10V VDS = 5V, VGS = – 10V VGS = ØV, ID = 10 mA VDS = ØV, ID = 10 mA TA = 150°C TA = 150°C 5 60 20 7 60 20 10 60 20 VGS = ØV, ID = ØA VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V f = 1 kHz f = 1 MHz f = 1 MHz 4 1 6 30 4 1 6 30 4 1 6 30 ns ns ns ns VDD = 1.5 V, VGS(ON) = ØV VGS(OFF) = – 12V, ID(ON) = 10 mA (IFN5432) RL = 145 Ω (IFN5433) RL = 143 Ω (IFN5433) RL = 140 Ω TOÐ52 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 1:02 PM Page B-49 01/99 B-49 J108, J109 N-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 25 V 50 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf rds(on) Cgd Cgs Cgd + Cgs V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) J108 Min – 25 –3 –3 80 3 – 10 Max J109 Min – 25 –3 –2 40 3 –6 Max Unit V nA V mA nA Process NJ450 Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 5V, ID = 1 µA VDS = 15V, VGS = ØV VDS = 5V, VGS = – 10V 8 15 15 85 Typ 3 1 4 18 Typ 3 1 4 18 12 15 15 85 Ω pF pF pF VGS = Ø, VDS < = 0.1V VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V VDS = VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz ns ns ns ns VDD VGS(OFF) RL J108 1.5 – 12 150 J109 1.5 –7 150 V V Ω TOÐ226AA Package Dimensions in Inches (mm) Surface Mount SMPJ108, SMPJ109 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-50 B-50 01/99 J110, J110A N-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 25 V 50 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf rds(on) Cgd Cgs Cgd + Cgs V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) J110 Min – 25 –3 – 0.5 10 3 –4 Max J110A Min – 25 –3 – 0.5 10 3 –4 Max Unit V nA V mA nA Process NJ450 Test Conditions IG = – 1 µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 5V, ID = 1 µA VDS = 15V, VGS = ØV VDS = 5V, VGS = – 10V 18 15 15 85 Typ 4 1 6 30 Typ 4 1 6 30 25 15 15 85 Ω pF pF pF VGS = Ø, VDS < = 0.1V VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V VDS = VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz ns ns ns ns VDD VGS(OFF) RL J110 1.5 –5 150 J110A 1.5 –5 150 V V Ω TOÐ226AA Package Dimensions in Inches (mm) Surface Mount SMPJ110, SMPJ110A Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-51 01/99 B-51 J111, J112, J113 N-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 35 V 50 mA 360 mW 3.27 mW/°C At 25°C free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf rds(on) Cdg Cgs Cgd + Cgs V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) J111 Min – 35 –1 –3 20 –1 – 10 Max J112 Min – 35 –1 –1 5 –1 –5 2 Max J113 Min – 35 –1 –3 –1 Max Unit V nA V mA nA Process NJ132 Test Conditions IG = – 1µA, VDS = ØV VGS = – 15V, VDS = ØV VDS = 5V, ID = 1 µA VDS = 15V, VGS = ØV VDS = 15V, VGS = – 10V 30 5 5 28 Typ 7 6 20 15 Typ 7 6 20 15 50 5 5 28 Typ 7 2 20 15 100 5 5 28 Ω pF pF pF VGS = ØV, VDS = 0.1V VDS = ØV, VGS = – 10V VDS = ØV, VGS = – 10V VDS = VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz ns ns ns ns VDD VGS(OFF) RL J111 10 – 12 800 J112 10 –7 1600 J113 10 –5 3200 V V Ω TOÐ226AA Package Dimensions in Inches (mm) Surface Mount SMPJ111, SMPJ112, SMPJ113 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range – 50 V 50 mA 500 mW 4 mW/°C – 65°C to + 200°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance gfs gos Ciss Crss V(BR)GDO IGSS VGS(OFF) IDSS 2N5020 Min 25 1 0.3 1.5 Max 2N5021 Min 25 1 0.5 –1 2.5 – 3.5 Max Unit V nA V mA Process PJ32 Test Conditions IG = 1µA, VDS = ØV VGS = 15V, VDS = ØV VDS = – 15V, ID = 1 nA VDS = – 15V, VGS = ØV – 0.3 – 1.2 1 3.5 20 25 7 1.5 6 20 25 7 mS µS pF pF VDS = – 15V, VGS = ØV VDS = – 15V, VGS = ØV VDS = – 15V, VGS = ØV VDS = – 15V, VGS = ØV f = 1 MHz f = 1 MHz TOÐ18 Package Dimensions in Inches (mm) Surface Mount SMP5020, SMP5021 Pin Configuration 1 Source 1, 2 Gate & Case, 3 Drain 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-52 B-52 01/99 J174, J175 P-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 30 V 50 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Dynamic Electrical Characteristics Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf Cgd Cgs Cgd + Cgs rds(on) V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) 5 J174 Min 30 1 10 –1 Max 85 Typ 5.5 5.5 32 3 Max J175 Min 30 1 6 – 70 –1 Max 85 Typ 5.5 5.5 32 pF pF pF Ω Max Unit V nA V mA nA Process PJ99 Test Conditions IG = 1 µA, VDS = ØV VGS = 20V, VDS = ØV VDS = – 15V, ID = – 10 nA VDS = – 15V, VGS = ØV VDS = – 15V, VGS = 10V – 20 – 125 – 7 VGS = Ø, VDS < = 0.1V f = 1 kHz VDS = ØV, VGS = 10V VDS = ØV, VGS = 10V VDS = VGS = ØV f = 1 MHz f = 1 MHz f = 1 MHz 2 5 5 10 5 10 10 20 ns ns ns ns VDD VGS(OFF) RL VGS(ON) J174 – 10 12 560 Ø J175 –6 8 1.2 k Ø V V Ω V TOÐ226AA Package Dimensions in Inches (mm) Surface Mount SMPJ174, SMPJ175 Pin Configuration 1 Drain, 2 Gate, 3 Source 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-53 01/99 B-53 J176, J177 P-Channel Silicon Junction Field-Effect Transistor ¥ Choppers ¥ Commutators ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating – 30 V 50 mA 360 mW 3.27 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Drain Cutoff Current Dynamic Electrical Characteristics Drain Source ON Resistance Dynamic Electrical Characteristics Drain Gate Capacitance Source Gate Capacitance Drain Gate + Source Gate Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf Cgd Cgs Cgd + Cgs rds(on) V(BR)GSS IGSS VGS(OFF) IDSS ID(OFF) 1 J176 Min 30 1 4 –1 Max 250 Typ 5.5 5.5 32 Max J177 Min 30 1 0.8 2.25 –1 Max 300 Typ 5.5 5.5 32 pF pF pF Ω Max Unit V nA V mA nA Process PJ99 Test Conditions IG = 1 µA, VDS = ØV VGS = 20V, VDS = ØV VDS = – 15V, ID = – 10 nA VDS = – 15V, VGS = ØV VDS = – 15V, VGS = 10V –2 – 35 – 1.5 – 20 VGS = Ø, VDS < = 0.1V f = 1 kHz VDS = ØV, VGS = 10V VDS = ØV, VGS = 10V VDS = VGS = ØV f = 1 MHz f = 1 MHz f = 1 MHz 15 20 15 20 20 25 20 25 ns ns ns ns VDD VGS(OFF) RL VGS(ON) J176 –6 6 5.6 k Ø J177 –6 3 10 k Ø V V Ω V TOÐ226AA Package Dimensions in Inches (mm) Surface Mount SMPJ176, SMPJ177 Pin Configuration 1 Drain, 2 Gate, 3 Source 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:31 AM Page B-19 01/99 B-19 2N5114, 2N5115, 2N5116 P-Channel Silicon Junction Field-Effect Transistor ¥ Analog Switches Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range – 40 V 50 mA 500mW 3 mW/°C – 65°C to + 200°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) V(BR)GSS IGSS VGS(OFF) VGS(F) IDSS 2N5114 Min 30 500 1 5 – 30 10 –1 – 90 Max 2N5115 Min 30 500 1 3 6 –1 – 15 – 60 Max 2N5116 Min 30 500 1 1 4 –1 –5 – 25 Max Unit V pA µA V V mA mA pA µA Process PJ99 Test Conditions IG = – 1µA, VDS = ØV VGS = 20V, VDS = ØV VGS = 20V, VDS = ØV VDS = – 15V, IG = – 1 nA VDS = ØV, IG = – 1 mA VGS = ØV, VDS = – 18V VGS = ØV, VDS = – 15V VDS = – 15V, VGS = 12 V VDS = – 15V, VGS = 12 V VDS = – 15V, VGS = 7V VDS = – 15V, VGS = 7V VDS = – 15V, VGS = 5V VDS = – 15V, VGS = 5V VGS = ØV, ID = – 15 mA VGS = ØV, ID = – 7 mA VGS = ØV, ID = – 3 mA VGS = ØV, ID = – 1 mA TA = 150°C TA = 150°C TA = 150°C TA = 150°C – 500 –1 Drain Cutoff Current ID(OFF) – 500 –1 – 500 –1 – 1.3 Drain Source ON Voltage Static Drain Source ON Resistance Dynamic Electrical Characteristics Drain Source ON Resistance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time td(on) tr td(off) tf 6 10 6 15 10 20 8 30 25 35 20 60 rds(on) Ciss Crss 75 25 7 7 7 100 25 150 27 VDS(ON) rDS(ON) 75 – 0.8 – 0.6 100 150 pA µA pA µA V V V Ω Ω pF pF pF pF VGS = ØV, ID = ØA VDS =– 15V, VGS = ØV VDS = ØV, VGS = 12V VDS = ØV, VGS = 7 V VDS = ØV, VGS = 5V VDD VGG RL RG ID(ON) – 10 20 130 100 – 15 –6 12 910 220 –7 f = 1 kHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz 2N5114 2N5115 2N5116 ns ns ns ns –6 8 2000 390 –3 V V Ω Ω mA TOÐ18 Package See Section G for Outline Dimensions Pin Configuration 1 Source 1, 2 Gate & Case, 3 Drain www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page G-2 G-2 01/99 TO-18 Package Dimensions in Inches (mm) 0.210 (5.33) 0.170 (4.32) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min 3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 2 0.100 (2.54) - Dia. Typ. 3 0.048 (1.22) 0.028 (0.71) 45° Bottom View 0.046 (1.17) 0.036 (0.91) 1 TO-39 Package Dimensions in Inches (mm) Alternate (Preferred) version cap height = Max 0.185 (4.70), Min 0.165 (4.19) 0.370 (9.40) 0.335 (8.51) 0.350 (8.89) 0.315 (8.00) Dia. Dia. 0.260 (6.60) 0.240 (6.10) 3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 2 1 45° Bottom View 0.210 (5.34) Dia. 0.190 (4.82) Dia. 0.050 (1.14) 0.029 (0.74) 0.034 (0.86) 0.028 (0.71) 3 0.125 (3.18) Max. 0.009 (0.23) Min. 0.750 (19.05) Max. 0.500 (12.70) Min 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page G-3 01/99 G-3 TO-46 Package Dimensions in Inches (mm) 0.085 (2.16) 0.065 (1.65) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 0.040 (1.02) Max. 0.750 (19.05) Max. 0.500 (12.70) Min 3 Leads - Dia. 0.021 (0.53) 0.016 (0.41) 2 0.100 (2.54) - Dia. Typ. 3 0.048 (1.22) 0.028 (0.71) 45° Bottom View 0.046 (1.17) 0.036 (0.914) 1 TO-52 Package Dimensions in Inches (mm) 0.150 (3.81) 0.115 (2.92) 0.230 (5.84) 0.195 (4.95) 0.209 (5.31) 0.178 (4.52) Dia. Dia. 0.030 (0.76) Max. 0.750 (19.05) Max. 0.500 (12.70) Min 3 Leads - Dia. 0.019 (0.48) 0.016 (0.41) 2 0.100 (2.54) - Dia. Typ. 3 0.048 (1.22) 0.028 (0.71) 45° Bottom View 0.046 (1.17) 0.036 (0.91) 1 www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page G-7 01/99 G-7 TO-236AB Package (SOT-23) Dimensions in Inches (mm) 0.021 (0.54) 0.015 (0.38) 3 0.098 (2.64) 0.055 (1.40) 0.083 (2.10) 0.047 (1.20) 1 0.022 (0.55) 0.017 (0.44) 0.120 (3.05) 0.105 (2.67) 0.004 (0.10) 0.001 (0.02) 2 0.079 (2.00) 0.071 (1.80) 0.040 (1.02) 0.031 (0.79) 0.010 (0.25) 0.005 (0.13) 0.0059 (0.15) 0.0035 (0.089) 8° 0.041 (1.12) 0.035 (0.89) SOIC-8 Package Dimensions in Inches (mm) 8765 0.158 (4.01) 0.244 (6.20) 0.150 (3.81) 0.228 (5.79) 1234 0.050 (1.27) 0.022 (0.56) 0.018 (0.046 0.018 (0.46 0.014 (0.36) 0.059 (1.50) 0.049 (1.24) 0.015 (0.37) Min. 0.069 (1.75) 0.053 (1.35) 45° 0.197 (5.00) 0.188 (4.78) 0.009 (0.23) 0.007 (0.18) www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page G-6 G-6 01/99 TO-226AA Package (TO-92) Dimensions in Inches (mm) 0.210 (5.33) 0.170 (4.32) 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min. 3 Leads 0.022 (0.55) 0.014 (0.36) 3 2 1 0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) Bottom View 0.022 (0.55) 0.014 (0.36) 0.105 (2.66) 0.095 (2.42) Seating Plane 0.750 (19.05) Max. 0.500 (12.70) Min. TO-226AB Package (TO-92/18) Dimensions in Inches (mm) 0.210 (5.33) 0.170 (4.32) 0.205 (5.20) 0.135 (3.43) 0.175 (4.45) Min. 3 Leads 0.022 (0.55) 0.014 (0.36) 3 2 1 0.165 (4.19) 0.125 (3.18) 0.115 (2.66) 0.080 (2.04) 0.052 (1.33) 0.047 (1.21) 0.022 (0.55) 0.014 (0.36) Seating Plane 0.750 (19.05) Max. 0.500 (12.70) Min. 0.105 (2.66) 0.095 (2.42) Bottom View 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com