®
RT4526
Small Package, High Performance, Asynchronous Boost
LED Driver
General Description
Features
The RT4526 is a high frequency, asynchronous Boost
converter. The internal MOSFET can support up to 10 white
LEDs for backlighting and OLED power applications, and
the internal soft-start function can reduce the inrush
current. The device operates with 1MHz fixed switching
frequency to allow small external components and to
simplify possible EMI problems. For the protection, the
RT4526 provides 37V OVP to allow inexpensive and smalloutput capacitors with lower voltage ratings. The LED
current is initially set with the external sense resistor RSET.
The RT4526 is available in the tiny TSOT-23-6 package
to provide the best solution for PCB space saving and
total BOM cost.
VIN Operating Range : 2.5V to 5.5V
Internal Power N-MOSFET Switch
Wide Range for PWM Dimming (100Hz to200kHz)
Minimize the External Component Counts
Internal Soft-Start
Internal Compensation
Under-Voltage Protection
Over-Voltage Protection
Over-Temperature Protection
RoHS Compliant and Halogen Free
Applications
Ordering Information
RT4526
Package Type
J6 : TSOT-23-6
Cellular Phones
Digital Cameras
PDAs and Smart Phones and MP3 and OLED.
Portable Instruments
Pin Configurations
Lead Plating System
G : Green (Halogen Free and Pb Free)
(TOP VIEW)
Note :
VIN VOUT EN
Richtek products are :
6
RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.
Suitable for use in SnPb or Pb-free soldering processes.
5
4
2
3
LX GND FB
TSOT-23-6
Simplified Application Circuit
D
L
LX
VIN
VIN
CIN
Enable
VOUT
VOUT
COUT
RT4526
EN
GND
8 WLEDs
FB
RSET
Copyright © 2015 Richtek Technology Corporation. All rights reserved.
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1
RT4526
Marking Information
06= : Product Code
06=DNN
DNN : Date Code
Functional Pin Description
Pin No.
Pin Name
Pin Function
1
LX
Switch Node. Open-drain output of the internal N-MOSFET. Connect this
pin to external inductor and diode.
2
GND
Ground.
3
FB
Feedback Voltage Input. Connect a resistor to GND to set output current.
4
EN
Enable Control Input (Active High).
5
VOUT
Output Voltage. (For OVP detect function)
6
VIN
Supply Input.
Function Block Diagram
VIN
UVLO
OTP
Logic Control,
Minimum On
Time
PWM
CurrentSense
LX
+
+
EA
GM
Driver
GND
+
-
Slope
Compensation
LPF
Enable
Logic
Shutdown
20ms
1µA
FB
PWM
Oscillator
Reference
Voltage
VREF
Bias
Current
EN
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VOUT
OCP
Internal
Compensation
Internal
Soft-Start
OVP
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DS4526-02 March 2015
RT4526
Operation
The RT4526 is an asynchronous step-up converter that
can support input voltage from 2.5V to 5.5V.
When the power plugs in and EN = H, VOUT is soft-started
(20m sec) to avoid the inrush current of VIN. Normally, the
low-side MOSFET is turned on by logic control which drives
the gate driver block when VFB is lower than the internal
reference voltage. The low-side MOSFET will be turned
on by minimum on-time. When the low-side MOSFET is
turned off, the current of inductor provide the power to
VOUT until VFB is lower than the internal reference voltage.
Then, the low-side MOSFET is turned on. When the current
of low-side MOSFET is over the rating current, the lowside MOSFET is turned off. When the temperature is over
the rating temperature, the low-side MOSFET is turned
off until the temperature is dropped by the OTP block.
When VIN is lower than 2.1V, the low-side MOSFET is
turned off by the UVLO block. When VOUT is higher than
rating voltage, the low-side MOSFET is turned off by the
OVP block. Internal clock is proved by the PWM Oscillator
block. Internal reference voltage is provided by the
Reference Voltage block. Internal current bias is provided
by the Bias Current block. the EN pin is pulled low by 1μA
current source.
Copyright © 2015 Richtek Technology Corporation. All rights reserved.
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3
RT4526
Absolute Maximum Ratings
(Note 1)
Supply Input Voltage, VIN -----------------------------------------------------------------------------------------------Switching Pin, LX ---------------------------------------------------------------------------------------------------------VOUT ------------------------------------------------------------------------------------------------------------------------Other Pins ------------------------------------------------------------------------------------------------------------------Power Dissipation, PD @ TA = 25°C
−0.3V to 6V
−0.3V to 50V
−0.3V to 46V
−0.3V to 6V
TSOT-23-6 ------------------------------------------------------------------------------------------------------------------Package Thermal Resistance (Note 2)
TSOT-23-6, θJA ------------------------------------------------------------------------------------------------------------Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------------Junction Temperature ----------------------------------------------------------------------------------------------------Storage Temperature Range -------------------------------------------------------------------------------------------ESD Susceptibility (Note 3)
HBM (Human Body Model) ---------------------------------------------------------------------------------------------MM (Machine Model) -----------------------------------------------------------------------------------------------------
0.5W
Recommended Operating Conditions
197.4°C/W
260°C
150°C
−65°C to 150°C
2kV
200V
(Note 4)
Junction Temperature Range -------------------------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range -------------------------------------------------------------------------------------------- −40°C to 85°C
Electrical Characteristics
(VIN = 3.7V, CIN = 2.2μF, COUT = 0.47μF, IOUT = 20mA, L = 22μH, TA = 25°C, unless otherwise specified)
Parameter
Symbol
Input Voltage
VIN
Under-Voltage Lockout
VUVLO
Test Conditions
UVLO Hysteresis
Min
Typ
Max
Unit
2.5
--
5.5
V
2
2.2
2.45
V
--
0.1
--
V
Quiescent Current
IQ
FB = 1.5V, No Switching
--
400
600
A
Supply Current
IIN
FB = 0V, Switching
--
1
2
mA
Shutdown Current
ISHDN
VEN < 0.4V
--
1
4
A
Line Regulation
VIN = 3V to 4.3V
--
1
--
%
Load Regulation
1mA to 20mA
--
1
--
%
0.75
1
1.25
MHz
Maximum Duty Cycle
90
92
--
%
Clock Rate
0.1
--
200
kHz
285
300
315
mV
--
0.7
1.2
Operation Frequency
fOSC
Feedback Reference Voltage
VREF
On Resistance
RDS(ON)
EN Threshold
Voltage
Logic-High
VIH
1.4
--
--
Logic-Low
VIL
--
--
0.5
IIH
--
1
--
A
--
0.1
--
V
EN Sink Current
EN Hysteresis
V
Over Voltage Threshold
VOVP
35
37
39
V
Over Current Threshold
IOCP
1
1.2
--
A
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RT4526
Parameter
OTP
Symbol
Test Conditions
TOTP
OTP Hysteresis
Shutdown Delay
TSHDN
Min
Typ
Max
Unit
--
160
--
C
--
30
--
C
--
20
--
ms
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright © 2015 Richtek Technology Corporation. All rights reserved.
DS4526-02 March 2015
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RT4526
Typical Application Circuit
L
22µH to 47µH
D
VOUT
1
VOUT
5
COUT
1µF
6 VIN
VIN
CIN
2.2µF
Enable
LX
RT4526
4 EN
2
GND
8 WLEDs
FB
3
RSET
Note : The IC is not suitable for unstable supply applications which caused by the external components of VIN.
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RT4526
Typical Operating Characteristics
Efficiency vs. Input Voltage
Efficiency vs. Output Current
100
100
VIN = 4.5V
80
80
VIN = 4V
Efficiency (%)
70
Efficiency (%)
ILOAD = 30mA
90
90
60
50
40
30
20
ILOAD = 10mA
70
ILOAD = 20mA
60
50
40
30
20
10
10
VOUT = 10V
VOUT = 34V
0
0
0
0.05
0.1
0.15
0.2
0.25
0.3
2.5
3
3.5
Output Current (A)
4.5
5
Quiescent Current vs. Input Voltage
500
35
450
Quiescent Current (µA)
40
30
25
20
15
400
350
300
250
VFB = 1.5V
VIN = 3.7V, VOUT = 34V
200
10
5
15
25
35
45
55
65
75
2.5
85
3
3.5
4
4.5
5
5.5
Input Voltage (V)
Output Current (mA)
Frequency vs. Temperature
Frequency vs. Input Voltage
1100
1100
1050
1050
Frequency (kHz)
Frequency (kHz)
5.5
Input Voltage (V)
Output Voltage vs. Output Current
Output Voltage (V)
4
1000
950
900
1000
950
900
850
850
VIN = 3.7V, ILED = 20mA
ILED = 20mA
800
800
2.5
3
3.5
4
4.5
5
Input Voltage (V)
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DS4526-02 March 2015
5.5
-40 -25 -10
5
20
35
50
65
80
95 110 125
Temperature (°C)
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RT4526
Reference Voltage vs. Input Voltage
Reference Voltage vs. Temperature
0.32
0.34
Reference Voltage (V)
Reference Voltage (V)
0.33
0.29
VOUT = 34V, IOUT = No Load
0.26
10WLED, ILED = 20mA
0.23
0.2
0.32
VIN = 3V
0.31
VIN = 3.7V
0.30
VIN = 4.2V
0.29
0.28
0.27
ILED = 20mA
0.17
0.26
2.5
3
3.5
4
4.5
5
5.5
-40
-15
35
60
85
Temperature (°C)
Input Voltage (V)
Reference Voltage vs. Output Current
Enable Threshold vs. Input Voltage
1.00
0.314
0.98
VIN = 3V
0.310
Rising
0.96
0.306
VIN = 4.2V
VIN = 3.7V
0.302
0.298
Enable Voltage (V)
Reference Voltage (V)
10
0.94
0.92
0.90
0.88
Falling
0.86
0.84
0.294
VOUT = 34V
0.82
0.80
0.290
0
5
10
15
20
25
30
2.5
3
3.5
4
4.5
Output Current (mA)
Input Voltage (V)
LED Current vs. Duty
Power On from EN
5
5.5
25
LED Current (mA)
20
VEN
(2V/Div)
15
f
f
f
f
10
= 200Hz
= 2kHz
= 20kHz
= 200kHz
5
VOUT
(10V/Div)
6WLED, ILED = 20mA, VIN = 3.7V
VIN = 3.7V, ILED = 20mA
0
0
10
20
30
40
50
60
70
80
90
100
Time (1ms/Div)
Duty (%)
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RT4526
Power Off from EN
Ripple Voltage
VIN
(20mV/Div)
VEN
(2V/Div)
VOUT
(20mV/Div)
VOUT
(10V/Div)
VIN = 3.7V, ILED = 20mA
VIN = 3.7V, ILED = 20mA
Time (1ms/Div)
Time (500ns/Div)
PWM Dimming from EN
PWM Dimming from EN
f = 20kHz
f = 200Hz
VEN
(4V/Div)
VEN
(4V/Div)
I LED
(10mA/Div)
I LED
(10mA/Div)
VIN = 3.7V, ILED = 20mA
Time (1ms/Div)
Copyright © 2015 Richtek Technology Corporation. All rights reserved.
DS4526-02 March 2015
VIN = 3.7V, ILED = 20mA
Time (10μs/Div)
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RT4526
Applications Information
LED Current Setting
The loop of Boost structure will keep the FB pin voltage
equal to the reference voltage VREF. Therefore, when RSET
connects the FB pin and GND, the current flows from VOUT
through LED and RSET to GND will be decided by the current
on RSET, which is equal to following equation :
V
ILED = REF
RSET
300mV
EN
VA
For the brightness dimming control of the RT4526, the IC
provides typically 300mV feedback voltage when the EN
pin is pulled constantly high. However, the EN pin allows a
PWM signal to reduce this regulation voltage by changing
the PWM duty cycle to achieve LED brightness dimming
control. The relationship between the duty cycle and FB
voltage can be calculated as the following equation :
VFB = Duty x 300mV
Where
Duty = duty cycle of the PWM signal
300mV = internal reference voltage
As shown in Figure 1, the duty cycle of the PWM signal
is used to cut the internal 300mV reference voltage. An
internal low pass filter is used to filter the pulse signal,
and then the reference voltage can be made by connecting
the output of the filter to the error amplifier for the FB pin
voltage regulation.
However, the internal low pass filter 3db frequency is
500Hz. When the dimming frequency is lower than 500Hz,
VA is also a PWM signal and the LED current is controlled
directly by this signal. When the frequency is higher than
500Hz, PWM is filtered by the internal low pass filter and
the VA approaches a DC signal. The LED current is a DC
current which eliminates the audio noise. Two figures of
PWM Dimming from EN are shown in Typical Operating
Characteristics section and the PWM dimming frequency
is 200Hz and 20kHz, respectively.
To Controller
FB
Figure 1. Block Diagram of Programmable FB Voltage
Using PWM Signal
PWM Minimum Duty
Dimming Control
a. Using a PWM Signal to EN Pin
+
EA
-
Dimming frequency < 500Hz
4%
Dimming frequency > 500Hz
10%
b. Using a DC Voltage
Using a variable DC voltage to adjust the brightness is a
popular method in some applications. The dimming control
using a DC voltage circuit which is shown in Figure 2. As
the DC voltage increases, the current flows through R3
increasingly and the voltage drop on R3 increases, i.e.
the LED current decreases. For example, if the VDC range
is from 0V to 2.8V and assume the RT4526 is selected
which VREF is equal to 0.3V, the selection of resistors in
Figure 2 sets the LED current from 21mA to 0mA. The
LED current can be calculated by the following equation.
R3 (VDC VREF )
VREF
R4
ILED =
RSET
VIN
2.5V to 5.5V
VOUT
L
10µH to 47µH
D
COUT
1µF
CIN
2.2µF
RT4526
6 VIN
2
3
GND
FB
LX 1
VOUT
EN
5
4
WLEDs
Enable
R3
10k
R4
85k
RSET
16
VDC Dimming
0V to 2.8V
Figure 2. Dimming Control Using a DC Voltage
For the RT4526, the minimum duty vs. frequency is listed
in following table.
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RT4526
c. Using a Filtered PWM signal
Another common application is using a filtered PWM
signal as an adjustable DC voltage for LED dimming control.
A filtered PWM signal acts as the DC voltage to regulate
the output current. The recommended application circuit
is shown as Figure 3. In this circuit, the output ripple
depends on the frequency of PWM signal. For smaller
output voltage ripple (10k
R2
D
COUT
1µF
CIN
2.2µF
RT4526
6
2
3
VIN
GND
LX 1
VOUT
EN
FB
COUT
1µF
CIN
2.2µF
RT4526
5
WLEDs
4
2
Enable
3
R4
3k
RDC
82k
LX 1
6 VIN
R3
10k
GND
VOUT
EN
FB
5
R1
4
Enable
RSET
16
CDC
1µF
R2
2.8V
0V
PWM Signal
Figure 5. Constant Output Voltage Application
Figure 3. Dimming Control Using a Filtered PWM Signal
VIN
20
VOUT
L
22µH
D
18
COUT
1µF
CIN
2.2µF
16
LED Current (mA)
VOUT
L
10µH to 47µH
14
RT4526
6
12
1
VIN
LX
2 GND
VOUT 5
…
10
Enable 4 EN
8
FB 3
3 x 13 WLEDs
6
4
RSET
2
0
0
20
40
60
80
100
Figure 6. Application for Driving 3 X 13 WLEDs
PWM Duty (%)
Figure 4. PWM Duty Cycle vs. LED Current
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RT4526
Application for Driving 3 x 13 WLEDs
Inductor Selection
The RT4526 can drive different WLEDs topology. For
example, the Figure 6 shows the 3x13 WLEDs and total
current is equal to 260mA. The total WLEDs current can
be set by the RSET which is equal to the following equation.
The recommended value of inductor for 10 WLEDs
applications is from 10μH to 47μH. Small size and better
efficiency are the major concerns for portable devices,
such as the RT4526 used for mobile phone. The inductor
should have low core loss at 1MHz and low DCR for better
efficiency. The inductor saturation current rating should
be considered to cover the inductor peak current.
ITotal =
VREF
RSET
Power Sequence
In order to assure the normal soft-start function for
suppressing the inrush current, the input voltage should
be ready before EN pulls high.
Soft-Start
The function of soft-start is made for suppressing the inrush
current to an acceptable value at the beginning of poweron. The RT4526 provides a built-in soft-start function by
clamping the output voltage of error amplifier so that the
duty cycle of the PWM will be increased gradually in the
soft-start period.
Current Limiting
The current flows through inductor during charging period
is detected by a current sensing circuit. As the value
comes across the current limiting threshold, the NMOSFET will be turned off so that the inductor will be
forced to leave charging stage and enter discharging stage.
Therefore, the inductor current will not increase over the
current limiting threshold.
OVP/UVLO/OTP
The Over-Voltage Protection (OVP) is detected by a
junction breakdown detecting circuit. Once VOUT goes over
the detecting voltage, the LX pin stops switching and the
power N-MOSFET will be turned off. Then, the VOUT will
be clamped to be near VOVP. As the output voltage is higher
than a specified value or input voltage is lower than a
specified value, the chip will enter protection mode to
prevent abnormal function. As the die temperature is higher
then 160°C, the chip will also enter protection mode. The
power MOSFET will be turned off during protection mode
to prevent abnormal operation.
Capacitor Selection
A 2.2μF input ceramic capacitor and a 1μF output ceramic
capacitor are recommended for the RT4526 applications
for driving 10 series WLEDs. For better voltage filtering,
ceramic capacitors with low ESR are recommended. X5R
and X7R types are suitable because of their wider voltage
and temperature ranges.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum operation junction temperature. The maximum
power dissipation depends on the thermal resistance of
IC package, PCB layout, the rate of surroundings airflow
and temperature difference between junction to ambient.
The maximum power dissipation can be calculated by
following formula :
PD(MAX) = ( TJ(MAX) − TA ) / θJA
Where T J(MAX) is the maximum operation junction
temperature, TA is the ambient temperature and the θJA is
the junction to ambient thermal resistance.
Where T J(MAX) is the maximum operation junction
temperature, TA is the ambient temperature and the θJA is
the junction to ambient thermal resistance.
For the recommended operating conditions specification
of RT4526, the maximum junction temperature of the die
is 125°C. The junction to ambient thermal resistance θJA
is layout dependent. For TSOT-23-6 package, the thermal
resistance, θJA, is 197.4°C/W on a standard JEDEC 51-7
four-layer thermal test board. The maximum power
dissipation at TA = 25°C can be calculated by following
formula :
PD(MAX) = (125°C − 25°C) / (197.4°C/W) = 0.5W for
TSOT-23-6 package
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RT4526
The maximum power dissipation depends on the operating
ambient temperature for fixed T J(MAX) and thermal
resistance, θJA. The derating curve in Figure 7 allows the
designer to see the effect of rising ambient temperature
on the maximum power dissipation.
Maximum Power Dissipation (W)1
0.6
Layout Consideration
For best performance of the RT4526, the following
guidelines must be strictly followed.
Input and Output capacitors should be placed close to
the IC and connected to ground plane to reduce noise
coupling.
The GND should be connected to a strong ground plane
for heat sinking and noise protection.
Keep the main current traces as short and wide as
possible .
LX node of DC/DC converter is with high frequency
voltage swing. It should be kept at a small area.
Place the feedback components as close as possible
to the IC and keep away from the noisy devices.
Four-Layer PCB
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
Ambient Temperature (°C)
Figure 7. Derating Curve of Maximum Power Dissipation
The inductor should be placed as close as
possible to the switch pin to minimize the
noise coupling into other circuits.
LX node copper area should be minimized
for reducing EMI.
GND
The COUT should be connected
directly from the output schottky
diode to ground rather than
across the WLEDs
COUT
VIN
CIN should be placed
as close as possible
to VIN pin for good
filtering.
D
L
LX
1
6
VIN
GND
2
5
VOUT
3
4
EN
CIN
RSET
FB
WLEDs
FB node copper area should be
minimized and keep far away
from noise sources (LX pin) and
RS should be as close as
possible to FB pin.
Figure 8. PCB Layout Guide
Table 1. Recommended Components for Typical Application Circuit
Reference Qty
Part Number
Description
D
1
SR26
CIN
1
EMK107BJ225MA-T Capacitor, Ceramic, 2.2F/16V X5R
Taiyo Yuden
COUT
1
GMK107BJ105KA
Capacitor, Ceramic, 1F/50V X5R
Taiyo Yuden
RSET
1
RC0603FR
Resistor 15, 1%
YAGEO
L
1
NR4018T220M
Inductor, 22H
Taiyo Yuden
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Schottky Diode
Manufacture
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RT4526
Outline Dimension
H
D
L
C
B
b
A
A1
e
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
0.700
1.000
0.028
0.039
A1
0.000
0.100
0.000
0.004
B
1.397
1.803
0.055
0.071
b
0.300
0.559
0.012
0.022
C
2.591
3.000
0.102
0.118
D
2.692
3.099
0.106
0.122
e
0.838
1.041
0.033
0.041
H
0.080
0.254
0.003
0.010
L
0.300
0.610
0.012
0.024
TSOT-23-6 Surface Mount Package
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
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