RT8207
Complete DDRII/DDRIII Memory Power Supply Controller
General Description
Features
The RT8207 provides a complete power supply for both
DDRII/DDRIII memory systems. It integrates a
synchronous PWM buck controller with a 3A sink/source
tracking linear regulator and a buffered low noise reference.
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` Resistor Programmable Current Limit by Low-Side
The PWM controller provides the high efficiency, excellent
transient response, and high DC output accuracy needed
for stepping down high-voltage batteries to generate low
voltage chipset RAM supplies in notebook computers.
The constant-on-time PWM control scheme handles wide
input/output voltage ratios with ease and provides 100ns
“instant-on” response to load transients while maintaining
a relatively constant switching frequency.
The RT8207 achieves high efficiency at a reduced cost
by eliminating the current-sense resistor found in
traditional current-mode PWMs. Efficiency is further
enhanced by its ability to drive very large synchronous
rectifier MOSFETs. The buck conversion allows this device
to directly step down high-voltage batteries for the highest
possible efficiency.
PWM Controller
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RDS(ON) Sense
` Quick Load-Step Response within 100ns
` 1% VOUT Accuracy Over Line and Load
` Fixed 1.8V (DDRII), 1.5V (DDRIII) or Adjustable
0.75V to 3.3V Output Range
` Battery Input Range 2.5V to 26V
` Resistor Programmable Frequency
` Over/Under Voltage Protection
` 4 Steps Current Limit During Soft-Start
` Drives Large Synchronous-Rectifier FETs
` Power-Good Indicator
3A LDO (VTT), Buffered Reference (VTTREF)
` Capable to Sink and Source Up to 3A
` LDO Input Available to Optimize Power Losses
` Requires Only 20μ
μF Ceramic Output Capacitor
` Buffered Low Noise 10mA VTTREF Output
` Accuracy ±20mV for Both VTTREF and VTT
` Supports High-Z in S3 and Soft-Off in S4/S5
RoHS Compliant and Halogen Free
The 3A sink/source LDO maintains fast transient response
only requiring 20μF of ceramic output capacitance. In
addition, the LDO supply input is available externally to
significantly reduce the total power losses. The RT8207
supports all of the sleep state controls placing VTT at
High-Z in S3 and discharging VDDQ, VTT and VTTREF
(soft-off) in S4/S5.
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The RT8207 has all of the protection features including
thermal shutdown and is available in the WQFN-24L 4x4
package.
Pin Configurations
Applications
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(TOP VIEW)
VTT
VLDOIN
BOOT
UGATE
PHASE
LGATE
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DDRII/DDRIII Memory Power Supplies
Notebook Computers
SSTL18, SSTL15 and HSTL Bus Termination
Ordering Information
RT8207
Package Type
QW : WQFN-24L 4x4 (W-Type)
Note :
Lead Plating System
G : Green (Halogen Free and Pb Free)
Richtek products are :
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RoHS compliant and compatible with the current require-
24 23 22 21 20 19
VTTGND
VTTSNS
GND
MODE
VTTREF
DEM
1
18
2
17
3
16
GND
4
15
25
5
14
13
6
7
8
PGND
NC
CS
VDDP
VDD
PGOOD
9 10 11 12
NC
VDDQ
FB
S3
S5
TON
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WQFN-24L 4x4
ments of IPC/JEDEC J-STD-020.
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Suitable for use in SnPb or Pb-free soldering processes.
DS8207-07 March 2011
www.richtek.com
1
RT8207
Marking Information
For marking information, contact our sales representative
directly or through a Richtek distributor located in your
area.
Typical Application Circuit
VIN
2.5V to 26V
R4
620k
12
VDDP
5V
15
R1
5.1
C1
1µF
C2
1µF
R2
100k
PGOOD
R5
0
RT8207
BOOT 22
TON
VDDP
PHASE
R3
5.6k
16
CS
13 PGOOD
C4
0.1µF
Q1
BSC09
4N035
R6 0
UGATE 21
14 VDD
C9
10µF x 3
20
LGATE 19
VVDDQ
1.2V
L1
1µH
C7
220µF
R7
Q2
BSC032N035
R8
6k
C5
FB 9
C6
R9
10k
10 S3
11
VLDOIN 23
S5
VDDQ Control
4
VDDQ 8
Discharge Mode
MODE
6 DEM
CCM/DEM
24
VTT
3 , Exposed Pad (25)
2
GND
VTTSNS
18 PGND
1 VTTGND VTTREF 5
VTT/VTTREF Control
C9
0.1µF
C8
10µF x 2
C3
33nF
Figure A. Adjustable Voltage Regulator
VIN
2.5V to 26V
R4
620k
12
VDDP
5V
15
C1
1µF
R2
100k
PGOOD
VTT/VTTREF Control
VDDQ Control
Discharge Mode
R1
5.1
C2
1µF
RT8207
BOOT 22
TON
VDDP
14 VDD
R3
5.6k
16 CS
13 PGOOD
10 S3
11
S5
4
MODE
6 DEM
CCM/DEM
3 , Exposed Pad (25)
GND
18 PGND
1 VTTGND
UGATE 21
PHASE
R5
0
C8
10µF x 2
C4
0.1µF
20
LGATE 19
VVDDQ
1.8V/1.5V
Q1
BSC09
4N035
R6 0
Q2
BSC032N035
L1
1µH
R7
C6
220µF
C5
VDDQ 8
VLDOIN 23
VTT 24
VTTSNS 2
VTTREF 5
C7
10µF x 2
C3
33nF
FB 9
VDDP for DDRII
GND for DDRIII
Figure B. Fixed Voltage Regulator
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DS8207-07 March 2011
RT8207
Function Block Diagram
TRIG
On-time
Compute
1-SHOT
VDDQ
TON
- +
GM
+
-
+
S
FB
70% VREF
+
-
OV
Latch
S1
Q
-
UV
Latch
S1
Q
+
UGATE
DRV
PHASE
VDDP
1-SHOT
PGND
Diode
Emulation
+
+
Thermal
Shutdown
SS Timer
S5
LGATE
DRV
90% VREF
VDD
PWM
Q
Min. TOFF
Q
TRIG
VREF 0.75V
115% VREF
BOOT
R
Comp
-
GM
+
CS
VDD
PWM
10µA
DEM
PGOOD
S3
MODE
Discharge
Mode
Select
VTTREF
VLDOIN
+
+
+
-
VTT
+
-
VTTSNS
110% VVTTREF
GND
90% VVTTREF
+
+
VTTGND
DS8207-07 March 2011
www.richtek.com
3
RT8207
Functional Pin Description
Pin No.
Pin Name
1
VTTGND
2
VTTSNS
3,
25 (Exposed Pad)
GND
Pin Function
Power Ground for the VTT_LDO.
Voltage Sense Input for the VTT_LDO. Connect to the terminal of the VTT_LDO
output capacitor
Analog Ground. The exposed pad must be soldered to a large PCB and
connected to GND for maximum power dissipation.
4
MODE
Output Discharge Mode Setting Pin. Connect to VDDQ for tracking discharge.
Connect to GND for non-tracking discharge. Connect to VDD for no discharge.
5
VTTREF
VTTREF Buffered Reference Output.
6
DEM
7, 17
NC
Diode-Emulation Mode Enable Pin. Connect to VDD will enable diode-emulation
mode. Connect to GND will always operate in forced CCM mode.
No Internal Connection.
VDDQ Reference Input for VTT and VTTREF. Discharge current sinking terminal
8
VDDQ
for VDDQ non-tracking discharge. Output voltage feedback input for VDDQ
output if FB pin is connected to VDD or GND
VDDQ Output Setting Pin. Connect to GND for DDRIII (VDDQ = 1.5V) power
supply. The pin should be connect to VDD for DDRII (VDDQ = 1.8V) power supply
9
FB
10
S3
S3 Signal Input.
11
S5
S5 Signal Input
12
TON
13
PGOOD
Power-Good Open-Drain Output. This pin will be in HIGH state when VDDQ
output voltage is within the target range.
14
VDD
Supply Input for the Analog Supply.
15
VDDP
Supply Input for the Low Gate Driver.
16
CS
18
PGND
Power Ground for Low-Side MOSFET.
19
LGATE
Low-Side Gate Driver Output for VDDQ.
20
PHASE
External Inductor Connection for VDDQ and it behaves as the current sense
comparator input for Low-Side MOSFET RDS(ON) sensing.
21
UGATE
High-Side Gate Driver Output for VDDQ.
22
BOOT
Boost Flying Capacitor Connection for VDDQ.
23
VLDOIN
Power Supply for the VTT_LDO.
24
VTT
Power Output for the VTT_LDO
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4
or be connected to a resistive voltage divider from VDDQ to GND to adjust the
output of PWM from 0.75V to 3.3V.
The pin is used to set the UGATE on time through a pull-up resistor connecting to
V IN.
Current Limit Threshold Setting Input. Connect this pin to VDD through the
voltage setting resistor.
DS8207-07 March 2011
RT8207
Absolute Maximum Ratings
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(Note 1)
Input Voltage, TON to GND ---------------------------------------------------------------------------------------------BOOT to GND -------------------------------------------------------------------------------------------------------------PHASE to GND
DC ----------------------------------------------------------------------------------------------------------------------------
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