RT8239AZQW

® RT8239A/B/C High Efficiency, Main Power Supply Controller for Notebook Computers General Description Features The RT8239A/B/C is a dual step down, Switch Mode Power Supply (SMPS) controller which generates logic supply voltages for battery powered systems. It includes two Pulse Width Modulation (PWM) controllers adjustable from 2V to 5.5V and also two fixed 5V/3.3V linear regulators. One of the controllers (LDO5) provides automatic switch over to the BYP1 input connected to the main SMPS1 output for maximized efficiency. An optional external charge pump can be monitored through SECFB (RT8239B/C). Other features include on board power up sequencing, a power good output, internal softstart, and a soft discharge output that prevents negative voltage during shutdown. z A constant on-time PWM control scheme operates without sense resistors and assures fast load transient response while maintaining nearly constant switching frequency. To eliminate noise in audio applications, an ultrasonic mode is included, which maintains the switching frequency above 25kHz. Moreover, a diode emulation mode maximizes efficiency for light load applications. The SMPS1/SMPS2 switching frequency can be adjustable from 200kHz/233kHz to 400kHz/466kHz respectively. z z z z z z z z z z 5.5V to 25V Input Voltage Range 2V to 5.5V Output Voltage Range No Current Sense Resistor Needed 5V/3.3V Linear Regulators 4700ppm/°°C RDS(ON) Current Sensing Internal Current Limit Soft-Start and Soft Discharge Output Built In OVP/UVP/OCP Selectable Operation Mode with Switcher Enable Control (RT8239A) SECFB Input Maintains Charge Pump Voltage (RT8239B/C) Power Good Indicator (RT8239B/C includes SECFB) RoHS Compliant and Halogen Free Applications z z z Notebook computers System Power Supplies 3- and 4- Cell Li+ Battery-Powered Device Ordering Information RT8239A/B/C Package Type QW : WQFN-20L 3x3 (W-Type) The RT8239A/B/C is available in a WQFN-20L 3x3 package, and operates over an extended temperature range from −40°C to 85°C. Lead Plating System G : Green (Halogen Free and Pb Free) Z : ECO (Ecological Element with Halogen Free and Pb free) Pin Function With A : ENM B : SECFB C : SECFB, Ultrasonic Mode Note : Richtek products are : ` RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020. ` Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 Suitable for use in SnPb or Pb-free soldering processes. is a registered trademark of Richtek Technology Corporation. www.richtek.com 1 RT8239A/B/C Pin Configurations BYP1 BOOT1 UGATE1 PHASE1 LGATE1 BYP1 BOOT1 UGATE1 PHASE1 LGATE1 (TOP VIEW) 20 19 18 17 16 FB1 ENTRIP1 TON ENTRIP2 FB2 20 19 18 17 16 1 15 2 14 GND 3 4 21 5 13 12 11 7 8 9 10 1 15 2 14 GND 3 4 21 5 13 12 11 6 7 8 LDO3 LDO5 SECFB ENLDO VIN 9 10 PGOOD BOOT2 UGATE2 PHASE2 LGATE2 PGOOD BOOT2 UGATE2 PHASE2 LGATE2 6 FB1 ENTRIP1 TON ENTRIP2 FB2 LDO3 LDO5 ENM ENLDO VIN RT8239A RT8239B/C WQFN-20L 3x3 Marking Information RT8239B RT8239A JB= : Product Code JB=YM DNN YMDNN : Date Code JC= : Product Code JC=YM DNN JB : Product Code JB YM DNN YMDNN : Date Code YMDNN : Date Code JC : Product Code JC YM DNN YMDNN : Date Code RT8239C JD= : Product Code JD=YM DNN YMDNN : Date Code JD : Product Code JD YM DNN YMDNN : Date Code Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 2 is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C Typical Application Circuit VIN 5.5V to 25V R1 C1 10µF C2 0.1µF 18 UGATE1 N1 R2 + VOUT1 5V BOOT1 1 C5 1µF RTON LGATE1 PHASE2 9 C7 0.1µF L2 N4 13 ENM 21 (Exposed Pad) FB2 5 FB1 3 TON GND VOUT2 3.3V C8 R6 6.5k ENTRIP2 4 20 BYP1 Chip Enable 7 17 PHASE1 R3 15k R4 10k BOOT2 N3 R5 LGATE2 10 16 N2 C3 19 UGATE2 8 + C4 0.1µF L1 C6 10µF RT8239A 11 VIN 12 ENLDO ENTRIP1 2 LDO3 15 R8 100k R9 100k 3.3V Always On C9 4.7µF LDO5 14 PGOOD 6 R7 10k R10 100k C10 10µF 5V Always On Figure 1. RT8239A NB Main Supply Typical Application Circuit Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 is a registered trademark of Richtek Technology Corporation. www.richtek.com 3 RT8239A/B/C VIN 5.5V to 25V C1 10µF R1 C2 0.1µF 18 UGATE1 N1 R2 PHASE2 9 N3 R5 C7 0.1µF L2 N4 + 16 LGATE1 1 RTON R6 6.5k FB2 5 ENTRIP2 4 FB1 3 TON ENTRIP1 2 R8 100k R7 10k R9 100k On Off 20 BYP1 C5 1µF C11 0.1µF LDO3 15 C12 0.1µF LDO5 14 C13 0.1µF R11 200k C14 0.1µF C15 13 PGOOD 6 SECFB R12 39k VOUT2 3.3V C8 17 PHASE1 R3 15k R4 10k BOOT2 7 LGATE2 10 N2 C3 BOOT1 UGATE2 8 + VOUT1 5V 19 C4 0.1µF L1 C6 10µF RT8239B/C 11 VIN 12 ENLDO GND 3.3V Always On C9 4.7µF R10 100k C10 10µF 5V Always On 21 (Exposed Pad) VCP Figure 2. RT8239B/C NB Main Supply Typical Application Circuit Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 4 is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C Functional Pin Description Pin No. Pin Name Pin Function FB1 SMPS1 Feedback Input. Connect FB1 to a resistive voltage divider from SMPS1 output to GND for adjustable output from 2V to 5.5V. 2 ENTRIP1 Channel 1 Enable and Current Limit Setting Input. Connect resistor to GND to set the threshold for Channel 1 synchronous RDS(ON) sense. The GND-PHASE1 current limit threshold is 1/10th the voltage seen at ENTRIP1 over a 0.5V to 3V range. There is an internal 10μA current source from LDO5 to ENTRIP1. Leave ENTRIP1 floating or drive it above 4.5V to shut down channel 1. 3 TON ON-Time/Frequency Adjustment Input. Connect to GND with 56kΩ to 100kΩ. 4 ENTRIP2 Channel 2 Enable and Current Limit Setting Input. Connect resistor to GND to set the threshold for Channel 2 synchronous RDS(ON) sense. The GND-PHASE2 current limit threshold is 1/10th the voltage seen at ENTRIP2 over a 0.5V to 3V range. There is an internal 10μA current source from LDO5 to ENTRIP2. Leave ENTRIP2 floating or drive it above 4.5V to shut down channel 2. 5 FB2 SMPS2 Feedback Input. Connect FB2 to a resistive voltage divider from SMPS2 output to GND for adjustable output from 2V to 5.5V. 6 PGOOD 7 BOOT2 Boost Flying Capacitor Connection for SMPS2. Connect to an external capacitor according to the typical application circuits. 8 UGATE2 Upper Gate Driver Output for SMPS2. UGATE2 swings between PHASE2 and BOOT2. 9 PHASE2 Switch Node for SMPS2. PHASE2 is the internal lower supply rail for the UGATE2 high side gate driver. PHASE2 is also the current sense input for the SMPS2. 10 LGATE2 Lower Gate Drive Output for SMSP2. LGATE2 swings between GND and LDO5. 11 VIN 12 ENLDO Supply Input for LDO5. Master Enable Input. LDO5/LDO3 is enabled if it is within logic high level and disabled if it is less than the logic low level. Leave ENLDO floating to default enable LDO5/LDO3. Mode Selection with Enable Input. Pull up to LDO5 (Ultrasonic mode) or LDO3 (DEM) to turn on both switch Channels. Short to GND for shutdown. 1 ENM (RT8239A) Power Good Output for Channel 1 and Channel 2 (RT8239A). Power Good Output for Channel 1, Channel 2 and SECFB (RT8239B/C). SECFB (RT8239B/C) Change Pump Feedback Pin. The SECFB is used to monitor the optional external charge pump. Connect a resistive divider from the change pump output to GND to detect the output. If SECFB drops below its feedback threshold, an ultrasonic pulse occurs to refresh the charge pump driven by LGATE1 or LGATE2. If SECFB drops below its UV threshold, the switcher channels stop working and enter into discharge-mode. Pull up to LDO5 or LDO3 to disable SECFB UVP function. 14 LDO5 5V Linear Regulator Output. LDO5 is the supply voltage for the low side MOSFET driver and also the analog supply voltage for the device. Bypass a minimum 4.7μF ceramic capacitor to GND 15 LDO3 3.3V Linear Regulator Output. Bypass a minimum 4.7μF ceramic capacitor to GND. 16 LGATE1 Lower Gate Driver Output for SMPS1. LGATE1 swings between GND and LDO5. 17 PHASE1 Switch Node SMPS1. PHASE1 is the internal lower supply rail for the UGATE1 high side gate driver. PHASE1 is also the current sense input for the SMPS1. 13 Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 is a registered trademark of Richtek Technology Corporation. www.richtek.com 5 RT8239A/B/C Pin No. Pin Name Pin Function 18 UGATE1 Upper Gate Driver Output for SMPS1. UGATE1 swings between PHASE1 and BOOT1. 19 BOOT1 Boost Flying Capacitor Connection for SMPS1. Connect to an external capacitor according to the typical application circuits. 20 BYP1 Switch Over Source Voltage Input for LDO5. Analog Ground and Power Ground. The exposed pad must be soldered to a large PCB and connected to GND for maximum power dissipation. 21 (Exposed Pad) GND Function Block Diagram BOOT2 BOOT1 UGATE1 PHASE1 UGATE2 PHASE2 LDO5 LDO5 SMPS2 PWM Buck Controller SMPS1 PWM Buck Controller LGATE1 LDO5 LGATE2 LDO5 10µA 10µA FB2 ENTRIP2 FB1 ENTRIP1 On Time TON BYP1 ENM (RT8239A) SECFB (RT8239B/C) Switch Over Threshold + - PGOOD GND LDO5 REF LDO5 VIN ENLDO LDO3 Power-On Sequence Clear Fault Latch Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 6 LDO3 is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C Absolute Maximum Ratings (Note 1) VIN, ENLDO to GND -----------------------------------------------------------------------------------------------------BOOTx to PHASEx ------------------------------------------------------------------------------------------------------z ENTRIPx, FBx, TON, BYP1, PGOOD, LDO5, LDO3, ENM/SECFB to GND ------------------------------z PHASEx to GND DC ----------------------------------------------------------------------------------------------------------------------------< 20ns ----------------------------------------------------------------------------------------------------------------------z UGATEx to PHASEx DC ----------------------------------------------------------------------------------------------------------------------------< 20ns ----------------------------------------------------------------------------------------------------------------------z LGATEx to GND DC ----------------------------------------------------------------------------------------------------------------------------< 20ns ----------------------------------------------------------------------------------------------------------------------z Power Dissipation, PD @ TA = 25°C WQFN-20L 3x3 -----------------------------------------------------------------------------------------------------------z Package Thermal Resistance (Note 2) WQFN-20L 3x3, θJA ------------------------------------------------------------------------------------------------------WQFN-20L 3x3, θJC -----------------------------------------------------------------------------------------------------z Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------------z Junction Temperature ----------------------------------------------------------------------------------------------------z Storage Temperature Range -------------------------------------------------------------------------------------------z ESD Susceptibility (Note 3) HBM (Human Body Model) ---------------------------------------------------------------------------------------------z z Recommended Operating Conditions z z z −0.3V to 30V −0.3V to 6V −0.3V to 6V −0.3V to 30V −8V to 38V −0.3V to 6V −5V to 7.5V −0.3V to 6V −2.5V to 7.5V 3.33W 30°C/W 7.5°C/W 260°C 150°C −65°C to 150°C 2kV (Note 4) Supply Input Voltage, VIN ----------------------------------------------------------------------------------------------- 5.5V to 25V Junction Temperature Range -------------------------------------------------------------------------------------------- −40°C to 125°C Ambient Temperature Range -------------------------------------------------------------------------------------------- −40°C to 85°C Electrical Characteristics (VIN = 12V, VENLDO = 5V, VENTRIPx = 2V, VBYP1 = 5V, No Load on LDO5, LDO3, TA = 25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Rising Threshold -- 5.1 5.5 Falling Threshold 3.5 -- 4.5 Unit Input Supply VIN Power On Reset VIN Shutdown Current IVIN_SHDN VENLDO = GND -- 20 40 VIN Standby Supply Current IVIN_SBY Both SMPS Off -- 250 350 Both SMPSs on, FBx = 2.1V, BYP1 = 5V, ENM = 3.3V (RT8239A) -- 5 7 FBx, CCM Operation -- 2 -- FBx, DEM Operation 1.98 2.006 2.03 Quiescent Power Consumption IQ V μA mW SMPS Output and FB Voltage FBx Regulation Voltage VFBx Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 V is a registered trademark of Richtek Technology Corporation. www.richtek.com 7 RT8239A/B/C Parameter Symbol Output Voltage Adjustable Range Test Conditions Min Typ Max 2 -- 5.5 1.92 2 2.08 VPHASE1 = 2V -- 256 -- VPHASE2 = 2V -- 220 -- -- -- 400 SMPS1, SMPS2 Unit V VSECFB RT8239B On-Time Pulse Width tUGATEx VIN = 20V RTON = 56kΩ Minimum Off-Time tLGATEx VFBx = 1.8V fSMPS1 SMPS1 Operating Frequency 200 -- 400 fSMPS2 fASM SMPS2 Operating Frequency 233 25 --- 466 -- -- 2 -- ms 9.4 10 10.6 μA -- 4700 -- ppm/°C SECFB Voltage On-Time Frequency Range Ultrasonic Mode Frequency Soft-Start Soft-Start Time tSSx RT8239C, VPHASEx = 50mV Zero to 200mV Current Limit Threshold from ENTRIPx Enable ns ns kHz kHz Current Sense Current Limit Current Source IENTRIPx Temperature Coefficient of IENTRIPx Current Limit Adjustment Range On The Basis of 25°C VENTRIPx = IENTRIPx x RENTRIPx 0.5 -- 2.7 V Current Limit Threshold VENTRIPx GND − PHASEx, VENTRIPx = 2V 180 200 225 mV Zero-Current Threshold VZC GND − PHASEx, FBx = 2.1V -- 3 -- mV 4.8 5 5.2 4.75 -- 5.25 4.75 -- 5.25 -- 225 -- mA 4.53 4.66 4.79 V -- 1.5 3 Ω VBYP1 = 0V, ILDO3 < 100mA 3.2 3.3 3.46 V VBYP1 = 5V, ILDO3 < 100mA 3.2 3.3 3.46 -- 150 -- Rising Edge -- 4.35 4.5 Falling Edge 3.9 4.05 4.2 -- 2.2 -- −14 −10 −6 % -- 5 -- μs VENTRIPx = 0.9V Internal Regulator and Reference LDO5 Output Current ISHORT5 VBYP1 = 0V, ILDO5 < 100mA VBYP1 = 0V, ILDO5 < 100mA , 6.5V < VIN < 25V VBYP1 = 0V, ILDO5 < 50mA, 5.5V < VIN < 25V VBYP1 = 0V, VLDO5 = 4.5V 5V Switchover Threshold VBYP1TH Falling Edge, Rising Edge with FB1 Regulation Point 5V Switch RDS(ON) RBYPSW VBYP1 = 5V, ILDO5 = 50mA LDO3 Output Voltage VLDO3 LDO3 Output Current ISHORT3 LDO5 Output Voltage VLDO5 VBYP1 = 0V, VLDO3 = 2.9V V mA UVLO LDO5 UVLO Threshold VUVLO5 LDO3 UVLO Threshold VUVLO3 Both SMPS Off PGOOD Threshold VPGOOD PGOOD Detect, Rising edge with soft-start delay time. Hysteresis = 2.5% PGOOD Propagation Delay tPD_PGOOD Falling Edge V Power Good Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 8 is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C Parameter Symbol Test Conditions Min Typ Max Unit PGOOD Leakage Current ILK_PGOOD High State, Forced to 5.5V -- -- 1 μA PGOOD Output Low Voltage VSINK_PGOOD ISINK = 4mA -- -- 0.4 V SECFB Power Good Threshold VSFB_PGOOD SECFB with Respect to 2V (RT8239B/C) 40 50 60 % Over Voltage Protection Trip Threshold VOVP OVP Detect, FBx Rising Edge 108 112 116 % Over Voltage Protection Propagation Delay tDLY_OVP Rising Edge -- 5 -- μs UVP Detect, FBx Falling Edge. 53 58 63 % UVP Detect, SECFB Falling Edge. 0.8 -- 1.2 V -- 5 -- ms -- 150 -- °C -- 10 -- °C Clear Fault Level/SMPSx Off Level 4.5 -- -- V Rising Edge Threshold 1.2 1.6 2 Falling Edge Threshold When ENLDO is Floating (Default Enable) Clear Fault Level/SMPSs Off Level 0.9 0.95 1 2.1 -- -- -- -- 0.8 Fault Detection Under Voltage Protection Trip VUVP Threshold VSFB_UVP Under Voltage Protection Shutdown Blanking Time tSSHx From ENTRIPx or ENM Enable Thermal Shutdown Thermal Shutdown TSD Thermal Shutdown Hysteresis ΔTSD Logic Input ENTRIPx Input Voltage ENLDO Input Voltage ENM Input Voltage (RT8239A) Input Leakage Current VENTRIPx VENLDO 2.3 -- 3.6 4.5 -- -- IFBx SMPSs On, DEM Operation SMPSs On, Ultrasonic Mode Operation VFBx = 0V or 5V −1 -- 1 IP13 ENM/SECFB = 0V or 5V −1 -- 1 IENLDO ENLDO = 0V or 5V −1 -- 3 RBOOTx LDO5 to BOOTx, 10mA -- -- 90 RUGATEsr Source, VBOOTx − VUGATEx = 0.1V -- 5 8 RUGATEsk Sink, VUGATEx − VPHASEx = 0.1V -- 2 4 RLGATEsr Source, VLDO5 − VLGATEx = 0.1V -- 5 8 RLGATEsk Sink, VLGATEx = 0.1V -- 1.5 3 tLGATERx UGATEx Off to LGATEx On -- 30 -- tUGATERx LGATEx Off to UGATEx On -- 40 -- VENM V V μA Internal BOOT Switch Internal Boost Charging Switch On-Resistance Ω Power MOSFET Drivers UGATEx On-Resistance LGATEx On-Resistance Dead Time Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 Ω Ω ns is a registered trademark of Richtek Technology Corporation. www.richtek.com 9 RT8239A/B/C Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is measured at the exposed pad of the package. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 10 is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C Typical Operating Characteristics VOUT1 Efficiency vs. Load Current 100 90 90 80 80 70 70 Efficiency (%) Efficiency (%) VOUT1 Efficiency vs. Load Current 100 DEM ASM 60 50 40 30 20 10 0 0.001 DEM ASM 60 50 40 30 20 VIN = 8V, RTON = 100kΩ, VENTRIP1 = 1.5V VENTRIP2 = 5V, ENLDO = 5V 0.01 0.1 1 10 0 0.001 10 VIN = 12V, RTON = 100kΩ, VENTRIP1 = 1.5V VENTRIP2 = 5V, ENLDO = 5V 0.01 Load Current (A) 90 90 80 80 DEM ASM 50 40 30 0 0.001 DEM ASM 70 60 50 40 30 20 20 10 VIN = 20V, RTON = 100kΩ, VENTRIP1 = 1.5V VENTRIP2 = 5V, ENLDO = 5V 0.01 0.1 1 10 0 0.001 10 VIN = 8V, RTON = 100kΩ, VENTRIP1 = 5V, VENTRIP2 = 1.5V, ENLDO = 5V 0.01 Load Current (A) 90 90 80 80 70 DEM ASM 50 40 30 20 0 0.001 1 10 VOUT2 Efficiency vs. Load Current 100 Efficiency (%) Efficiency (%) VOUT2 Efficiency vs. Load Current 60 0.1 Load Current (A) 100 10 10 VOUT2 Efficiency vs. Load Current 100 Efficiency (%) Efficiency (%) VOUT1 Efficiency vs. Load Current 60 1 Load Current (A) 100 70 0.1 70 DEM ASM 60 50 40 30 20 VIN = 12V, RTON = 100kΩ, VENTRIP1 = 5V, VENTRIP2 = 1.5V, ENLDO = 5V 0.01 0.1 1 Load Current (A) Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 10 10 0 0.001 VIN = 20V, RTON = 100kΩ, VENTRIP1 = 5V, VENTRIP2 = 1.5V, ENLDO = 5V 0.01 0.1 1 10 Load Current (A) is a registered trademark of Richtek Technology Corporation. www.richtek.com 11 VOUT1 Switching Frequency 240 VIN = 8V, RTON = 100kΩ, 220 ENLDO = VIN, VENTRIP1 = 1.5V, 200 VENTRIP2 = 5V 180 vs. Load Current Switch Frequency (kHz)1 Switching Frequency (kHz)1 RT8239A/B/C 160 140 120 ASM DEM 100 80 60 40 20 0 0.001 0.01 0.1 1 VOUT1 Switching Frequency 260 VIN = 12V, RTON = 100kΩ, 240 ENLDO = VIN, VENTRIP1 = 1.5V, 220 VENTRIP2 = 5V 200 180 160 140 120 ASM DEM 100 80 60 40 20 0 0.001 10 0.01 Switching Frequency (kHz)1 Switching Frequency (kHz)1 vs. Load Current 1 10 Switching Frequency (kHz)1 Switching Frequency (kHz)1 Load Current 1 Load Current (A) Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 12 1 10 VOUT2 Switching Frequency 280 VIN = 8V, RTON = 100kΩ, 260 ENLDO = VIN, VENTRIP1 = 5V, 240 VENTRIP2 = 1.5V 220 200 180 160 140 120 ASM 100 DEM 80 60 40 20 0 0.001 0.01 vs. Load Current 0.1 1 10 Load Current (A) Load Current (A) VOUT2 Switching Frequency vs. 300 280 VIN = 12V, RTON = 100kΩ, 260 ENLDO = VIN, VENTRIP1 = 5V, 240 VENTRIP2 = 1.5V 220 200 180 160 140 120 ASM 100 DEM 80 60 40 20 0 0.001 0.01 0.1 0.1 Load Current (A) Load Current (A) VOUT1 Switching Frequency 260 VIN = 20V, RTON = 100kΩ, 240 ENLDO = VIN, VENTRIP1 = 1.5V, 220 V ENTRIP2 = 5V 200 180 160 140 120 ASM 100 DEM 80 60 40 20 0 0.001 0.01 0.1 vs. Load Current 10 VOUT2 Switching Frequency 300 280 VIN = 20V, RTON = 100kΩ, 260 ENLDO = VIN, VENTRIP1 = 5V, 240 VENTRIP2 = 1.5V 220 200 180 160 140 120 ASM 100 DEM 80 60 40 20 0 0.001 0.01 0.1 vs. Load Current 1 10 Load Current (A) is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C VOUT2 Output Voltage vs. Load Current 3.420 5.031 3.414 5.028 3.408 Output Voltage (V) Output Voltage (V) VOUT1 Output Voltage vs. Load Current 5.034 5.025 5.022 ASM DEM 5.019 5.016 VIN = 12V, RTON = 100kΩ, ENLDO = VIN, VENTRIP1 = 1.5V, VENTRIP2 = 5V 5.013 5.010 0.001 0.01 0.1 1 3.402 3.396 ASM DEM 3.390 3.384 VIN = 12V, RTON = 100kΩ, ENLDO = VIN, VENTRIP1 = 5V, VENTRIP2 = 1.5V 3.378 3.372 0.001 10 0.01 0.1 1 10 Load Current (A) Load Current (A) LDO3 Output Voltage vs. Output Current LDO5 Output Voltage vs. Output Current 5.072 3.354 3.352 3.350 Output Voltage (V) Output Voltage (V) 5.068 5.064 5.060 5.056 3.348 3.346 3.344 3.342 3.340 3.338 5.052 VIN = 12V, VENTRIP1 = VENTRIP2 = 5V, ENLDO = VIN 5.048 3.336 VIN = 12V, VENTRIP1 = VENTRIP2 = 5V, ENLDO = VIN 3.334 0 10 20 30 40 50 60 70 80 90 100 0 10 20 Output Current (mA) 40 50 60 70 80 90 100 Output Current (mA) Standby Input Current vs. Input Voltage No Load Battery Current vs. Input Voltage 100 240 10 ASM DEM 1 RTON = 100kΩ, VENTRIP1 = VENTRIP2 =1.5V, EVLDO = VIN 0.1 Standby Input Current (μA)1 Battery Current (mA) 30 238 236 234 232 230 228 VENTRIP1 = VENTRIP2 = 5V, ENLDO = VIN, No Load 226 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Input Voltage (V) Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 6 8 10 12 14 16 18 20 22 24 26 Input Voltage (V) is a registered trademark of Richtek Technology Corporation. www.richtek.com 13 RT8239A/B/C Power On from ENLDO Shutdown Input Current vs. Input Voltage Shutdown Input Current (μA)1 22 21 20 19 LDO5 (2V/Div) LDO3 (2V/Div) CP (10V/Div) 18 17 16 15 14 13 12 11 VENTRIP1 = VENTRIP2 = 5V, ENLDO = GND, No Load ENLDO (10V/Div) VIN = 12V, VENTRIP1 = VENTRIP2 = 1.5V ENLDO = VIN, RTON = 100kΩ, No Load 10 6 8 10 12 14 16 18 20 22 24 26 Time (2ms/Div) Input Voltage (V) Power Off from ENM Power On from ENM RT8239A RT8239A VOUT1 (5V/Div) VOUT2 (5V/Div) VOUT1 (2V/Div) VOUT2 (2V/Div) PGOOD (5V/Div) ENM (5V/Div) VIN = 12V, VENM = 5V, RTON = 100kΩ, VENTRIP1 = VENTRIP2 = 1.5V, ENLDO = VIN, No Load PGOOD (5V/Div) VIN = 12V, VENM = 5V, RTON = 100kΩ VENTRIP1 = VENTRIP2 = 1.5V, ENLDO = VIN, No Load ENM (5V/Div) Time (1ms/Div) Time (10ms/Div) Power On from ENTRIP1 Power Off from ENTRIP1 RT8239B/C VOUT1 (2V/Div) VOUT1 (2V/Div) PGOOD (5V/Div) PGOOD (5V/Div) ENTRIP1 (5V/Div) VIN = 12V, VENTRIP1 = VENTRIP2 = 1.5V, ENLDO = VIN, RTON = 100kΩ, No Load Time (1ms/Div) Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 14 RT8239B/C RT8239B/C ENTRIP1 (5V/Div) VVIN = 12V, 12V, VVENTRIP1 = VVENTRIP2 = 1.5V, 1.5V, IN = ENTRIP1 = ENTRIP2 = ENLDO ENLDO == VIN, VIN, R RTON = 100kΩ, 100kΩ,No No Load Load TON = Time (4ms/Div) is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C Power On from ENTRIP2 Power Off from ENTRIP2 RT8239B/C RT8239B/C VOUT2 (1V/Div) PGOOD (5V/Div) VOUT2 (1V/Div) PGOOD (10V/Div) ENTRIP2 (5V/Div) ENTRIP2 (5V/Div) VIN = 12V, VENTRIP1 = VENTRIP2 = 1.5V, ENLDO = VIN, RTON = 100kΩ, No Load Time (1ms/Div) VOUT1 DEM-MODE Load Transient Response VOUT2 DEM-MODE Load Transient Response UGATE2 (20V/Div) UGATE1 (20V/Div) LGATE1 (5V/Div) LGATE2 (5V/Div) VIN = 12V, RTON = 100kΩ, ENLDO = VIN, IOUT1 =1A to 8A Inductor Current (5A/Div) VIN = 12V, RTON = 100kΩ, ENLDO = VIN, IOUT2 =1A to 8A Time (20μs/Div) Time (20μs/Div) OVP UVP VOUT1 (2V/Div) PGOOD (5V/Div) UGATE1 (50V/Div) LGATE1 (10V/Div) VOUT1 (2V/Div) PGOOD (5V/Div) VOUT2 (2V/Div) Time (20ms/Div) VOUT2_AC (50mV/Div) VOUT1_AC (50mV/Div) Inductor Current (5A/Div) VIN = 12V, VENTRIP1 = VENTRIP2 = 1.5V, ENLDO = VIN, RTON = 100kΩ, No Load VIN = 12V, RTON = 100kΩ, ENLDO = VIN, No Load Time (10ms/Div) Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 VIN = 12V, RTON = 100kΩ, ENLDO = VIN Time (100μs/Div) is a registered trademark of Richtek Technology Corporation. www.richtek.com 15 RT8239A/B/C Application Information The RT8239A/B/C is a dual, Mach ResponseTM DRVTM mode synchronous buck controller targeted for notebook system power supply solutions. RICHTEK's Mach ResponseTM technology provides fast response to load steps. The topology circumvents the poor load transient timing problems of fixed frequency current mode PWMs while avoiding the problems caused by widely varying switching frequency in conventional constant on-time and constant off-time PWM schemes. A special adaptive ontime control trades off the performance and efficiency over wide input voltage range. The RT8239A/B/C includes 5V (LDO5) and 3.3V (LDO3) linear regulators. The LDO5 linear regulator steps down the battery voltage to supply both internal circuitry and gate drivers. The synchronous switch gate drivers are directly powered by LDO5. When VOUT1 rises above 4.66V, an automatic circuit disconnects the linear regulator and allows the device to be powered by VOUT1 via the BYP1 pin. PWM Operation The Mach ResponseTM DRVTM mode controller relies on the output filter capacitor's Effective Series Resistance (ESR) to act as a current sense resistor, so that the output ripple voltage provides the PWM ramp signal. Referring to the RT8239A/B/C's Function Block Diagram, the synchronous high side MOSFET will be turned on at the beginning of each cycle. After the internal one-shot timer expires, the MOSFET will be turned off. The pulse width of this one-shot is determined by the converter's input voltage and the output voltage to keep the frequency fairly constant over the entire input voltage range. Another oneshot sets a minimum off-time (400ns typ). The on-time one-shot will be triggered if the error comparator is high, the low side switch current is below the current limit threshold, and the minimum off-time one-shot has timed out. PWM Frequency and On-time Control For each specific input voltage range, the Mach ResponseTM control architecture runs with pseudo constant frequency by feed forwarding the input and output voltage into the on-time one-shot timer. The high side switch ontime is inversely proportional to the input voltage as Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 16 measured by VIN and proportional to the output voltage. There are two benefits of a constant switching frequency. First, the frequency can be selected to avoid noise sensitive regions such as the 455kHz IF band. Second, the inductor ripple current operating point remains relatively constant, resulting in easy design methodology and predictable output voltage ripple. The frequency for 3V SMPS is set higher than the frequency for 5V SMPS. This is done to prevent audio frequency “beating” between the two sides, which switch asynchronously for each side. The TON pin is connected to GND through the external resistor, RTON, to set the switching frequency. The RT8239A/B/C adaptively changes the operation frequency according to the input voltage. Higher input voltage usually comes from an external adapter, so the RT8239A/B/C operates with higher frequency to have better performance. Lower input voltage usually comes from a battery, so the RT8239A/B/C operates with lower switching frequency for lower switching losses. For a specific input voltage range, the switching cycle period is given by : For 5.5V < VIN < 6.5V : tS1 = 61.28p x RTON tS2 = 44.43p x RTON For 6.5V < VIN < 12V : tS1 = 51.85p x RTON tS2 = 44.43p x RTON For 12V < VIN < 25V : tS1 = 45.75p x RTON tS2 = 39.2p x RTON The on-time guaranteed in the Electrical Characteristics table is influenced by switching delays in the external high side power MOSFET. Two external factors that influence switching frequency accuracy are resistive drops in the two conduction loops (including inductor and PC board resistance) and the dead time effect. These effects are the largest contributors to the change of frequency with changing load current. The dead time effect increases the effective on-time by reducing the switching frequency is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C as one or both dead times. It occurs only in PWM mode when the inductor current reverses at light or negative load currents. With reversed inductor current, the inductor's EMF causes PHASEx to go high earlier than normal, hence extending the on-time by a period equal to the low to high dead time. For loads above the critical conduction point, the actual switching frequency is : f = (VOUT + VDROP1 ) / (tON x (VIN + VDROP1 − VDROP2 )) where VDROP1 is the sum of the parasitic voltage drops in the inductor discharge path, including synchronous rectifier, inductor, and PC board resistances; VDROP2 is the sum of the resistances in the charging path; and tON is the on-time calculated by the RT8239A/B/C. load current is further decreased, it takes longer and longer time to discharge the output capacitor to the level that requires the next “ON” cycle. The on-time is kept the same as that in the heavy load condition. In reverse, when the output current increases from light load to heavy load, the switching frequency increases to the preset value as the inductor current reaches the continuous conduction. The transition load point to the light load operation is shown in Figure 3. and can be calculated as follows : IL Slope = (VIN-VOUT)/L IPEAK ILOAD = IPEAK/2 Operation Mode Selection The RT8239A/B supports two operation modes : Diode Emulation Mode and Ultrasonic Mode. The RT8239C only supports Ultrasonic Mode. The operation mode can be set via the ENM pin for RT8239A or SECFB pin for RT8239B. Table 1. Operation Mode Setting Part Number RT8239A RT8239B RT8239C Pin Name ENM SECFB SECFB Pin-13 Voltage Range Mode State 4.5V to 5V ASM ASM ASM 2.3V to 3.6V DEM DEM ASM 1.2V to 1.8V ASM ASM ASM Below 0.8V Shutdown UVP UVP Diode Emulation Mode In Diode Emulation Mode, the RT8239A/B automatically reduces switching frequency at light load conditions to maintain high efficiency. This reduction of frequency is achieved smoothly. As the output current decreases from heavy-load condition, the inductor current is also reduced, and eventually comes to the point that its current valley touches zero, which is the boundary between continuous conduction and discontinuous conduction modes. By emulating the behavior of diodes, the low side MOSFET allows only partial negative current to flow when the inductor free wheeling current becomes negative. As the Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 0 tON t Figure 3. Boundary condition of CCM/DEM (VIN − VOUT ) × tON 2L where tON is the on-time. ILOAD(SKIP) ≈ The switching waveforms may appear noisy and asynchronous when light loading causes diode emulation operation. This is normal and results in high efficiency. Trade offs in PFM noise vs. light load efficiency is made by varying the inductor value. Generally, low inductor values produce a broader efficiency vs. load curve, while higher values result in higher full load efficiency (assuming that the coil resistance remains fixed) and less output voltage ripple. Penalties for using higher inductor values include larger physical size and degraded load transient response (especially at low input voltage levels). Ultrasonic Mode The RT8239A/B/C activates a unique type of Diode Emulation Mode with a minimum switching frequency of 25kHz, called Ultrasonic Mode. This mode eliminates audio-frequency modulation that would otherwise be present when a lightly loaded controller automatically skips pulses. In Ultrasonic Mode, the low side switch gate driver signal is “OR”ed with an internal oscillator (>25kHz). Once the internal oscillator is triggered, the is a registered trademark of Richtek Technology Corporation. www.richtek.com 17 RT8239A/B/C ultrasonic controller pulls LGATEx high and turns on the low side MOSFET to induce a negative inductor current. After the output voltage falls below the reference voltage, the controller turns off the low side MOSFET (LGATEx pulled low) and triggers a constant on-time (UGATEx driven high). When the on-time has expired, the controller reenables the low side MOSFET until the controller detects that the inductor current dropped below the zero crossing threshold. Linear Regulators (LDOx) The RT8239A/B/C includes 5V (LDO5) and 3.3V (LDO3) linear regulators. The regulators can supply up to 100mA for external loads. Bypass LDOx with a minimum 4.7μF ceramic capacitor. When VOUT1 is higher than the switch over threshold (4.66V), an internal 1.5Ω P-MOSFET switch connects BYP1 to the LDO5 pin while simultaneously disconnects the internal linear regulator. Current Limit Setting (ENTRIPx) The RT8239A/B/C has cycle-by-cycle current limit control. The current limit circuit employs a unique “valley” current sensing algorithm. If the magnitude of the current sense signal at PHASEx is above the current limit threshold, the PWM is not allowed to initiate a new cycle (Figure 4). The actual peak current is greater than the current limit threshold by an amount equal to the inductor ripple current. Therefore, the exact current limit characteristic and maximum load capability are a function of the sense resistance, inductor value, and battery and output voltage. IL IPEAK ILOAD ILIMIT t Figure 4. “Valley” Current Limit The RT8239A/B/C uses the on resistance of the synchronous rectifier as the current sense element and supports temperature compensated MOSFET RDS(ON) sensing. The RILIM resistor between the ENTRIPx pin and Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 18 GND sets the current limit threshold. The resistor, RILIM, is connected to a current source from ENTRIPx which is 10μA (typ.) at room temperature. The current source has a 4700ppm/°C temperature slope to compensate the temperature dependency of the RDS(ON). When the voltage drop across the sense resistor or low side MOSFET equals 1/10 the voltage across the RILIM resistor, positive current limit will be activated. The high side MOSFET will not be turned on until the voltage drop across the MOSFET falls below 1/10 the voltage across the RILIM resistor. Choose a current limit resistor according to the following equation : VILIM = (RILIM x 10μA) / 10 = IILIM x RDS(ON) RILIM = (IILIM x RDS(ON)) x 10 / 10μA Carefully observe the PC board layout guidelines to ensure that noise and DC errors do not corrupt the current sense signal at PHASEx and GND. Mount or place the IC close to the low side MOSFET. Charge Pump (SECFB) The external 14V charge pump is driven by LGATEx. When LGATEx is low, C1 will be charged by VOUT1 through D1. C1 voltage is equal to VOUT1 minus the diode drop. When LGATEx becomes high, C1 transfers the charge to C2 through D2 and charges C2 voltage to VLGATEX plus C1 voltage. As LGATEx transitions low on the next cycle, C3 is charged to C2 voltage minus a diode drop through D3. Finally, C3 charges C4 through D4 when LGATEx switches high. Thus, the total charge pump voltage, VCP, is : VCP = VOUT1 + 2 x VLGATEx − 4 x VD where VLGATEx is the peak voltage of the LGATEx driver which is equal to LDO5 and VD is the forward voltage dropped across the Schottky diode. The SECFB pin in the RT8239B/C is used to monitor the charge pump via a resistive voltage divider to generate approximately 14V DC voltage and the clock driver uses VOUT1 as its power supply. In the event where SECFB drops below its feedback threshold, an ultrasonic pulse will occur to refresh the charge pump driven by LGATEx. If there's an overload on the charge pump in which SECFB can not reach more than its feedback threshold, the is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C controller will enter Ultrasonic Mode. Special care should be taken to ensure that enough normal ripple voltage is present on each cycle to prevent charge pump shutdown. The robustness of the charge pump can be increased by reducing the charge pump decoupling capacitor and placing a small ceramic capacitor, CF (47pF to 220pF), in parallel with the upper leg of the SECFB resistor feedback network, RCP1, as shown below in Figure 5. SECFB RCP2 LGATE1 C1 C3 CF RCP1 VOUT1 Charge Pump D1 D2 D3 C2 D4 C4 Figure 5. Charge pump circuit connected to SECFB MOSFET Gate Driver (UGATEx, LGATEx) The high side driver is designed to drive high current, low RDS(ON) N-MOSFET(s). When configured as a floating driver, 5V bias voltage is delivered from the LDO5 supply. The average drive current is also calculated by the gate charge at VGS = 5V times switching frequency. The instantaneous drive current is supplied by the flying capacitor between BOOTx and PHASEx pins. A dead time to prevent shoot through is internally generated from high side MOSFET off to low side MOSFET on and low side MOSFET off to high side MOSFET on. The low side driver is designed to drive high current low RDS(ON) N-MOSFET(s). The internal pull down transistor that drives LGATEx low is robust, with a 1.5Ω typical onresistance. A 5V bias voltage is delivered from the LDO5 supply. The instantaneous drive current is supplied by an input capacitor connected between LDO5 and GND. For high current applications, some combinations of high and low side MOSFETs may cause excessive gate drain coupling, which leads to efficiency killing, EMI producing, shoot through currents. This is often remedied by adding a resistor in series with BOOTx, which increases the turn on time of the high side MOSFET without degrading the turn-off time. See Figure 6. Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 VIN UGATEx BOOTx RBOOT PHASEx Figure 6. Increasing the UGATEx Rise Time Soft-Start The RT8239A/B/C provides an internal soft-start function to prevent large inrush current and output voltage overshoot when the converter starts up. The soft-start (SS) automatically begins once the chip is enabled. During softstart, the internal current limit circuit gradually ramps up the inductor current from zero. The maximum current limit value is set externally as described in previous section. The soft-start time is determined by the current limit level and output capacitor value. The current limit threshold ramp up time is typically 2ms from zero to 200mV after ENTRIPx is enabled. A unique PWM duty limit control that prevents output over voltage during soft-start period is designed specifically for FBx floating. UVLO Protection The RT8239A/B/C has LDO5 under voltage lock out protection (UVLO). When the LDO5 voltage is lower than 4.05V (typ.) and the LDO3 voltage is lower than 2.2V (typ.), both switch power supplies are shut off. This is a nonlatch protection. Power Good Output (PGOOD) PGOOD is an open-drain type output and requires a pull up resistor. PGOOD is actively held low in soft-start, standby, and shutdown. It is released when both output voltages are above 90% of the nominal regulation point for RT8239A. For RT8239B/C, besides requiring both output voltages to be above 90% of nominal regulation point, the SECFB threshold must also be above 50% of nominal regulation point in order for PGOOD to be released. The PGOOD signal goes low if either output turns off or is 10% below its nominal regulation point. is a registered trademark of Richtek Technology Corporation. www.richtek.com 19 RT8239A/B/C Output Over Voltage Protection (OVP) The output voltage can be continuously monitored for over voltage. If the output voltage exceeds 12% of its set voltage threshold, the over voltage protection is triggered and the LGATEx low side gate drivers are forced high. This activates the low side MOSFET switch, which rapidly discharges the output capacitor and pulls the input voltage downward. The RT8239A/B/C is latched once OVP is triggered and can only be released by either toggling ENLDO, ENTRIPx or cycling VIN. There is a 5μs delay built into the over voltage protection circuit to prevent false transition. Note that latching LGATEx high will cause the output voltage to dip slightly negative due to previously stored energy in the LC tank circuit. For loads that cannot tolerate a negative voltage, place a power Schottky diode across the output to act as a reverse polarity clamp. If the over voltage condition is caused by a short in high side switch, turning the low side MOSFET on 100% will create an electrical short between the battery and GND, hence blowing the fuse and disconnecting the battery from the output. overloading LDOx can cause large power dissipation on automatic switches, which may still result in thermal shutdown. Discharge Mode (Soft Discharge) When ENTRIPx is low and a transition to standby or shutdown mode occurs, or the output under voltage fault latch is set, the output discharge mode will be triggered. During discharge mode, an internal switch creates a path for discharging the output capacitors' residual charge to GND. Shutdown Mode SMPS1, SMPS2, LDO3 and LDO5 all have independent enabling control. Drive ENLDO, ENTRIP1 and ENTRIP2 below the precise input falling edge trip level to place the RT8239A/B/C in its low power shutdown state. The RT8239A/B/C consumes only 20μA of input current while in shutdown. When shutdown mode is activated, the reference turns off. The accurate 0.95V falling edge threshold on ENLDO can be used to detect a specific analog voltage level and to shutdown the device. Once in shutdown, the 1.6V rising edge threshold activates, providing sufficient hysteresis for most applications. Output Under Voltage Protection (UVP) The output voltage can be continuously monitored for under voltage. If the output is less than 58% of its set voltage threshold, the under voltage protection will be triggered and then both UGATEx and LGATEx gate drivers will be forced low. The UVP is ignored for at least 5ms (typ.) after a start up or a rising edge on ENTRIPx. Toggle ENTRIPx or cycle VIN to reset the UVP fault latch and restart the controller. Power Up Sequencing and On/Off Controls (ENTRIPx, ENM) ENTRIP1 and ENTRIP2 control SMPS power up sequencing. When the RT8239A/B/C is applied in the single channel mode, ENTRIPx disables the respective output when ENTRIPx voltage rises above 4.5V. Furthermore, when the RT8239A is applied in the dual channel mode, the outputs are enabled when ENM voltage rises above 2.3V. Thermal Protection The RT8239A/B/C features thermal shutdown to prevent damage from excessive heat dissipation. Thermal shutdown occurs when the die temperature exceeds 150°C. All internal circuitry is inactive during thermal shutdown. The RT8239A/B/C triggers thermal shutdown if LDOx is not supplied from VOUTx, while input voltage on VIN and drawing current from LDOx are too high. Nevertheless, even if LDOx is supplied from VOUTx, Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 20 is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C Table1. Operation Mode Truth Table Mode Condition Comment Power Up LDOx < UVLO threshold Transitions to discharge mode after VIN POR and after REF becomes valid. LDO5 and LDO3 remain active. Run ENLDO = high, VOUT1 or VOUT2 are enabled Normal Operation. Over Voltage Protection Either output > 112% of the nominal level. Under Voltage Protection Either output < 58% of the nominal level after 3ms time-out expires and output is enabled Discharge Either output is still high in standby mode or shutdown mode Standby ENTRIPx or ENM < startup threshold, ENLDO = high. LDO3 and LDO5 are active. Shutdown ENLDO = low All circuitry are off. Thermal Shutdown TJ > 150°C All circuitry are off. Exit by VIN POR or by toggling ENLDO, ENTRIPx, and ENM. LGATEx is forced high. LDO3 and LDO5 are active. Exit by VIN POR or by toggling ENLDO, ENTRIPx, and ENM. Both UGATEx and LGATEx are forced low and enter discharge mode. LDO3 and LDO5 are active. Exit by VIN POR or by toggling ENLDO, ENTRIPx, and ENM. During discharge mode, there is one path to discharge the output capacitors’ residual charge to GND via an internal switch. Table 2. Power up Sequencing (RT8239A) ENLDO (V) ENM (V) ENTRIP1 (V) ENTRIP2 (V) LDO5 LDO3 SMPS1 SMPS2 Low Low X X Off Off Off Off “>1.6V” => High Low X X On On Off Off “>1.6V” => High “>2.3V” => High Off Off On On Off Off “>1.6V” => High “>2.3V” => High Off On On On Off On “>1.6V” => High “>2.3V” => High On On On On On On “>1.6V” => High “>2.3V” => High On Off On On On Off Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 is a registered trademark of Richtek Technology Corporation. www.richtek.com 21 RT8239A/B/C Output Voltage Setting (FBx) Output Capacitor Selection Connect a resistive voltage divider at the FBx pin between VOUTx and GND to adjust the output voltage between 2V and 5.5V (Figure 7). Choose R2 to be approximately 10kΩ, and solve for R1 using the equation : The capacitor value and ESR determine the amount of output voltage ripple and load transient response. Thus, the capacitor value must be greater than the largest value calculated from below equations. ⎛ ⎛ R1 ⎞ ⎞ VOUT = VFBx × ⎜ 1 + ⎜ ⎟⎟ ⎝ ⎝ R2 ⎠ ⎠ VSAG = (ΔILOAD )2 × L × (tON + tOFF(MIN) ) 2 × COUT × ⎡⎣ VIN × tON − VOUTx (tON + tOFF(MIN) )⎤⎦ where VFBx is 2V (typ.). VSOAR = VIN ⎛ ⎞ 1 VP−P = LIR × ILOAD(MAX) × ⎜ ESR + ⎟ 8 × COUT × f ⎠ ⎝ UGATEx VOUTx PHASEx LGATEx (ΔILOAD )2 × L 2 × COUT × VOUTx R1 PGND FBx R2 where VSAG and VSOAR are the allowable amount of undershoot and overshoot voltage during load transient, Vp-p is the output ripple voltage, and tOFF(MIN) is the minimum off-time. GND Thermal Considerations Figure 7. Setting VOUTx with a resistive voltage divider Output Inductor Selection The switching frequency (on-time) and operating point (% ripple or LIR) determine the inductor value as shown below : t × (VIN − VOUTx ) L = ON LIR × ILOAD(MAX) where LIR is the ratio of the peak-to-peak ripple current to the average inductor current. Find a low-loss inductor having the lowest possible DC resistance that fits in the allotted dimensions. Ferrite cores are often the best choice, although powdered iron is inexpensive and can work well at 200kHz. The core must be large enough not to saturate at the peak inductor current, IPEAK : IPEAK = ILOAD(MAX) + [ (LIR / 2) x ILOAD(MAX) ] The calculation above shall serve as a general reference. To further improve transient response, the output inductance can be further reduced. Of course, besides the inductor, the output capacitor should also be considered when improving transient response. Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 22 For continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula : PD(MAX) = (TJ(MAX) − TA) / θJA where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction to ambient thermal resistance. For recommended operating condition specifications, the maximum junction temperature is 125°C. The junction to ambient thermal resistance, θJA, is layout dependent. For WQFN-20L 3x3 packages, the thermal resistance, θJA, is 30°C/W on a standard JEDEC 51-7 four-layer thermal test board. The maximum power dissipation at TA = 25°C can be calculated by the following formula : P D(MAX) = (125°C − 25°C) / (30°C/W) = 3.33W for WQFN-20L 3x3 package The maximum power dissipation depends on the operating ambient temperature for fixed T J(MAX) and thermal is a registered trademark of Richtek Technology Corporation. DS8239A/B/C-06 October 2012 RT8239A/B/C Maximum Power Dissipation (W)1 resistance, θJA. The derating curve in Figure 8 allows the designer to see the effect of rising ambient temperature on the maximum power dissipation. 3.6 Four-Layer PCB 3.0 ` Place ground terminal of VIN capacitor(s), V OUTx capacitor(s), and source of low side MOSFETs as close to each other as possible. The PCB trace of PHASEx node, which connects to source of high side MOSFET, drain of low side MOSFET and high voltage side of the inductor, should be as short and wide as possible. 2.4 1.8 1.2 0.6 0.0 0 25 50 75 100 125 Ambient Temperature (°C) Figure 8. Derating Curve of Maximum Power Dissipation Layout Considerations Layout is very important in high frequency switching converter design. Improper PCB layout can radiate excessive noise and contribute to the converter’s instability. Certain points must be considered before starting a layout with the RT8239A/B/C. ` Place the filter capacitor close to the IC, within 12mm (0.5 inch) if possible. ` Keep current limit setting network as close as possible to the IC. Routing of the network should avoid coupling to high-voltage switching node. ` Connections from the drivers to the respective gate of the high side or the low side MOSFET should be as short as possible to reduce stray inductance. Use 0.65mm (25 mils) or wider trace. ` All sensitive analog traces and components such as FBx, ENTRIPx, PGOOD, and TON should be placed away from high voltage switching nodes such as PHASEx, LGATEx, UGATEx, or BOOTx nodes to avoid coupling. Use internal layer(s) as ground plane(s) and shield the feedback trace from power traces and components. Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8239A/B/C-06 October 2012 is a registered trademark of Richtek Technology Corporation. www.richtek.com 23 RT8239A/B/C Outline Dimension 1 1 2 2 DETAIL A Pin #1 ID and Tie Bar Mark Options Note : The configuration of the Pin #1 identifier is optional, but must be located within the zone indicated. Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 A3 0.175 0.250 0.007 0.010 b 0.150 0.250 0.006 0.010 D 2.900 3.100 0.114 0.122 D2 1.650 1.750 0.065 0.069 E 2.900 3.100 0.114 0.122 E2 1.650 1.750 0.065 0.069 e L 0.400 0.350 0.016 0.450 0.014 0.018 W-Type 20L QFN 3x3 Package Richtek Technology Corporation 5F, No. 20, Taiyuen Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5526789 Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries. www.richtek.com 24 DS8239A/B/C-06 October 2012