®
RT8511A
43V Asynchronous Boost WLED Driver
General Description
Features
The RT8511A is an LED driver IC that can support up to 10
WLED in series. It is composed of a current mode boost
converter integrated with a 43V/1.2A power switch running
at a fixed 1MHz frequency and covering a wide VIN range
from 2.7V to 24V.
Wide Input Voltage Range : 2.7V to 24V
High Output Voltage : up to 43V
Direct PWM Dimming Control and Frequency from
100Hz to 1kHz
Internal Soft -Start and Compensation
200mV Reference Voltage
PWM Dimming with Internal Filter
Programmable Over Voltage Protection
Over Temperature Protection
Current Limit Protection
Thin 8-Lead 2x2 and 8-Lead 3x3 WDFN Packages
RoHS Compliant and Halogen Free
For brightness dimming, the RT8511A is able to maintain
steady control of the LED current. Therefore, no audible
noises are generated on the output capacitor. The RT8511A
also has programmable over voltage pin to prevent the
output from exceeding absolute maximum ratings during
open LED conditions. The RT8511A is available in
WDFN-8L 2x2 and WDFN-8L 3x3 packages.
Applications
UMPC and Notebook Computer Backlight
GPS, Portable DVD Backlight
Pin Configurations
(TOP VIEW)
Ordering Information
RT8511A
OVP
FB
DIMC
GND
Package Type
QW : WDFN-8L 2x2 (W-Type)
QWA : WDFN-8L 3x3 (W-Type)
Lead Plating System
G : Green (Halogen Free and Pb Free)
Note :
Richtek products are :
RoHS compliant and compatible with the current requireSuitable for use in SnPb or Pb-free soldering processes.
3
6
4
9
5
2
7
EN
PWM
VIN
LX
WDFN-8L 2x2 / WDFN-8L 3x3
Marking Information
RT8511AGQW
14 : Product Code
ments of IPC/JEDEC J-STD-020.
8
1
GND
The white LED current is set with an external resistor, and
the feedback voltage is regulated to 200mV (typ.). During
operation, the LED current can be controlled by the PWM
input signal in which the duty cycle determines the
feedback reference voltage.
14W
W : Date Code
RT8511AGQWA
22= : Product Code
22=YM
DNN
Copyright © 2014 Richtek Technology Corporation. All rights reserved.
DS8511A-05 June 2014
YMDNN : Date Code
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1
RT8511A
Typical Application Circuit
VOUT
L
10µH
VIN
4.2V to 24V
CIN
1µF x 2
Chip Enable
6 VIN
D
RT8511A
R2
3.3M
LX 5
OVP
COUT
1µF x 2
1
8 EN
:
: WLEDs
:
:
R1
100k
FB 2
7 PWM
3
DIMC
PWM
100Hz to 1kHz
:
:
:
:
:
:
:
:
GND
RSET
3.3
4, 9 (Exposed Pad)
CDIMC
1µF
Figure 1. Typical Application Circuit of Normal Operation
VOUT
L
10µH
VLED
2.7V to 24V
CLED
1µF x 2
VIN
2.7V to 4.2V
D
RT8511A
CIN
1µF
Chip Enable
6 VIN
R2
3.3M
LX 5
OVP
COUT
1µF x 2
1
8 EN
7 PWM
3
DIMC
PWM
100Hz to 1kHz
:
:
:
:
:
:
:
:
:
: WLEDs
:
:
R1
100k
FB 2
GND
4, 9 (Exposed Pad)
RSET
3.3
CDIMC
1µF
Figure 2. Typical Application Circuit of Low Voltage Operation
Functional Pin Description
Pin No.
Pin Name
1
OVP
2
FB
3
DIMC
Pin Function
Over Voltage Protection for Boost Converter. The detecting threshold is 1.2V.
Feedback Pin. Connect a resistor between this pin and GND to set the LED
current.
PWM Filter Pin. Filter the PWM signal to a DC voltage.
4
GND
Ground Pin.
5
6
LX
VIN
Switch Node for Boost Converter.
Power Supply Input.
7
PWM
Dimming Control Input.
8
EN
Chip Enable (Active High) for Boost Converter.
The exposed pad must be soldered to a large PCB and connected to AGND for
maximum power dissipation.
9 (Exposed Pad)
GND
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DS8511A-05 June 2014
RT8511A
Function Block Diagram
OVP
LX
+
VIN
1.2V
-
EN
OTP
OSC
S
Q
R
Q
OCP
-
LX
Detection
PWM
Controller
PWM
DIMC
D/A
Dimming
0.8V
+
+
-
+
GND
-
FB
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RT8511A
Absolute Maximum Ratings
(Note 1)
VIN, EN, PWM, DIMC to GND -----------------------------------------------------------------------------------------LX, FB, OVP to GND ----------------------------------------------------------------------------------------------------Power Dissipation, PD @ TA = 25°C
WDFN-8L 2x2 -------------------------------------------------------------------------------------------------------------WDFN-8L 3x3 -------------------------------------------------------------------------------------------------------------Package Thermal Resistance (Note 2)
WDFN-8L 2x2, θJA --------------------------------------------------------------------------------------------------------WDFN-8L 2x2, θJC --------------------------------------------------------------------------------------------------------WDFN-8L 3x3, θJA --------------------------------------------------------------------------------------------------------WDFN-8L 3x3, θJC --------------------------------------------------------------------------------------------------------Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------------Junction Temperature ----------------------------------------------------------------------------------------------------Storage Temperature Range -------------------------------------------------------------------------------------------ESD Susceptibility (Note 3)
HBM (Human Body Model) ---------------------------------------------------------------------------------------------MM (Machine Model) -----------------------------------------------------------------------------------------------------
Recommended Operating Conditions
−0.3V to 26.5V
−0.3V to 48V
0.833W
1.429W
120°C/W
8.2°C/W
70°C/W
8.2°C/W
260°C
150°C
–65°C to 150°C
2kV
200V
(Note 4)
Supply Input Voltage, VIN ------------------------------------------------------------------------------------------------ 2.7V to 24V
Junction Temperature Range -------------------------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range -------------------------------------------------------------------------------------------- −40°C to 85°C
Electrical Characteristics
(VIN = 4.5V, TA = 25°C, unless otherwise specified)
Parameter
VIN Quiescent Current
VIN Shutdown Current
Symbol
Test Conditions
Min
Typ
Max
Unit
IQ
VFB = 1.5V, No Switching
--
725
--
A
IQ_SW
VFB = 0V, Switching
--
--
2.2
mA
ISHDN
VIN = 4.5V, VEN = 0V
--
1
4
A
Control Input
Logic-High
EN, PWM
Threshold Voltage Logic- Low
VIH
VIN = 2.7V to 24V
1.6
--
--
VIL
VIN = 2.7V to 24V
--
--
0.8
EN Sink Current
IIH
VEN = 3V
1
--
10
A
Shutdown Delay
tSHDN
EN high to low
26
32
40
ms
0.1
--
1
kHz
0.8
1
1.2
MHz
--
0.4
0.6
--
100
--
ns
--
92
--
%
PWM Dimming Frequency
V
Boost Converter
Switching Frequency
LX On Resistance
(N-MOSFET)
Minimum ON Time
fOSC
VIN = 2.7V to 24V
RDS(ON)
VIN > 5V
Maximum Duty Cycle
DMAX
VFB = 0V, Switching
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DS8511A-05 June 2014
RT8511A
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
5
--
--
%
LED Current
Minimum PWM Dimming Duty
Cycle
DMIN
Feedback Voltage
VFB
--
200
--
mV
ILIM
0.85
1.2
1.55
A
VOVP
--
1.2
--
V
TSD
--
160
--
°C
TSD
--
30
--
°C
Dimming Freq. = 100Hz to 1kHz
Fault Protection
LX Current Limit
Over Voltage Protection
Threshold
Thermal Shutdown
Temperature
Thermal Shutdown Hysteresis
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
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RT8511A
Typical Operating Characteristics
FB Reference Voltage vs. Input Voltage
Efficiency vs. Input Voltage
100
199.5
FB Reference Voltage (mV)
95
Efficiency (%)
90
85
80
75
70
65
199.2
198.9
198.6
198.3
VOUT = 29.5V
60
198.0
4
7
9
12
14
17
19
22
24
4
8
12
20
24
Input Voltage (V)
Input Voltage (V)
Frequency vs. Input Voltage
FB Reference Voltage vs. Temperature
200
1100
1075
198
Frequency (kHz)1
FB Reference Voltage (mV)
16
196
194
192
1050
1025
1000
975
950
925
VIN = 4.5V
900
190
-20
5
30
55
80
4
105
6
8
12
14
16
18
20
22
24
LED Current vs. PWM Duty Cycle
Frequency vs. Temperature
60
1100
1075
50
1050
LED Current (mA)
Frequency (kHz)1
10
Input Voltage (V)
Temperature (°C)
1025
1000
975
950
40
PWM = 100Hz
PWM = 1kHz
30
20
10
925
VIN = 4.5V
0
900
-50
-25
0
25
50
75
100
Temperature (°C)
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125
0
10
20
30
40
50
60
70
80
90
100
PWM Duty Cycle (%)
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DS8511A-05 June 2014
RT8511A
Application Information
The RT8511A is a current mode boost converter which
operates at a fixed frequency of 1MHz. It is capable of
driving up to 10 white LEDs in series and integrates
functions such as soft-start, compensation, and internal
analog dimming control. The protection block also provides
over-voltage, over-temperature, and current- limit protection
features.
Because the voltage of DIMC and FB is small to 2mV and
easily affected by LX switching noise.
200mV
PWM
R
DIMC
Brightness Control
For the brightness dimming control of the RT8511A, the
IC provides typically 200mV reference voltage when the
PWM pin is constantly pulled high. However, the PWM
pin allows a PWM signal to adjust the reference voltage
by changing the PWM duty cycle to achieve LED
brightness dimming control. The relationship between the
duty cycle and the FB voltage can be calculated according
to the following equation :
VFB = 200mV x Duty
where 200mV is the typical internal reference voltage and
Duty is the duty cycle of the PWM signal.
As shown in Figure 3, the duty cycle of the PWM signal
is used to modify the internal 200mV reference voltage.
With an on-chip output clamping amplifier and a serial
resistor, the PWM dimming signal is easily low-pass
filtered to an analog dimming signal with one external
capacitor, CDIMC, for noise-free PWM dimming. Dimming
frequency can be sufficiently adjusted from 100Hz to 1kHz.
However, the LED current cannot be 100% proportional to
the duty cycle. Referring to Table 1, the minimum dimming
duty can be as low as 1% for the frequency range from
100Hz to 1kHz. It should be noted that the accuracy of
1% duty is not guaranteed.
Copyright © 2014 Richtek Technology Corporation. All rights reserved.
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To
Controller
FB
LED Current Setting
The loop structure of the boost converter keeps the FB
pin voltage equal to the reference voltage VFB. Therefore,
by connecting the resistor, RSET between the FB pin and
GND, the LED current will be determined by the current
through RSET. The LED current can be calculated by the
following equation :
V
ILED = FB
RSET
+
EA
-
CDIMC
1µF
Figure 3. Block Diagram of Programmable FB Voltage.
Table 1. Minimum Duty for Dimming Frequency
Dimming Frequency
Minimum Duty Cycle
100Hz to 1kHz
5%
It also should be noted that when the input voltage is too
close to the output voltage [(VOUT −VIN) < 6V] , excessive
audible noise may occur. Additionally, for accurate
brightness dimming control, the input voltage should be
kept lower than the LEDs' turn on voltage. When operating
in the light load , excessive output ripple may occur..
Soft-Start
The RT8511A provides a built-in soft-start function to limit
the inrush current, while allowing for an increased PWM
frequency for dimming.
Current Limiting Protection
The RT8511A can limit the peak current to achieve over
current protection. The IC senses the inductor current
through the LX pin in the charging period. When the value
exceeds the current limiting threshold, the internal NMOSFET will be turned off. In the off period, the inductor
current will descend. The internal MOSFET is turned on
by the oscillator during the beginning of the next cycle.
In addition, the LX current limit threshold is about 0.8V.
If the voltage of LX is over 0.8V, and the fault signal
accumulates 3 times with 32μs, the MOSFET will be
latched off.
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RT8511A
Power Sequence
In order to assure that the normal soft start function is in
place for suppressing the inrush current, the input voltage
and enable voltage should be ready before PWM pulls
high.
Figure 4 and Figure 5 show the power on and power off
sequences.
VIN
VIN
EN
EN
PWM
PWM
soft-start
VOUT
VOUT
Mode1
Mode1
VIN
VIN
EN
EN
PWM
VOUT
soft-start
VOUT
Mode2
Mode2
VIN
VIN
EN
EN
PWM
PWM
VOUT
soft-start
VOUT
Shutdown
Delay
Mode3
Mode3
Figure 4. Power On Sequence
Figure 5. Power Off Sequence
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RT8511A
Over Voltage Protection
The RT8511A equips over voltage protection (OVP) function.
When the voltage at the OVP pin reaches a threshold of
approximately 1.2V, the MOSFET drive output will turn
off. The MOSFET drive output will turn on again once the
voltage at the OVP pin drops below the threshold. Thus,
the output voltage can be clamped at a certain voltage
level, as shown in the following equation :
VOUT, OVP = VOVP 1+ R2
R1
where R1 and R2 make up the voltage divider connected
to the OVP pin.
Over Temperature Protection
The RT8511A has an over temperature protection (OTP)
function to prevent overheating caused by excessive power
dissipation from overheating the device. The OTP will shut
down switching operation if the junction temperature
exceeds 160°C. The boost converter will start switching
again when the junction temperature is cooled down by
approximately 30°C.
where fOSC is the switching frequency. For better efficiency,
it is suggested to choose an inductor with small series
resistance.
Diode Selection
The Schottky diode is a good choice for an asynchronous
boost converter due to its small forward voltage. However,
when selecting a Schottky diode, important parameters
such as power dissipation, reverse voltgae rating, and
pulsating peak current must all be taken into
consideration. A suitable Schottky diode's reverse voltage
rating must be greater than the maximum output voltage,
and its average current rating must exceed the average
output current.
Capacitor Selection
Two 1μF ceramic input capacitors and two 1μF ceramic
output capacitors are recommended for driving 10 WLEDs
in series. For better voltage filtering, ceramic capacitors
with low ESR are recommended. Note that the X5R and
X7R types are suitable because of their wide voltage and
temperature ranges.
Inductor Selection
The inductance depends on the maximum input current.
As a general rule, the inductor ripple current range is 20%
to 40% of the maximum input current. If 40% is selected
as an example, the inductor ripple current can be
calculated according to the following equation :
VOUT IOUT
IIN(MAX) =
(MIN) VIN(MIN)
IRIPPLE = 0.4 IIN(MAX)
where η is the efficiency of the boost converter, IIN(MAX) is
the maximum input current, IOUT is the total current from
all LED strings, and IRIPPLE is the inductor ripple current.
The input peak current can be calculated by maximum
input current plus half of inductor ripple current shown as
following equation :
IPEAK = 1.2 x IIN(MAX)
Note that the saturated current of the inductor must be
greater than IPEAK. The inductance can eventually be
determined according to the following equation :
2
VIN (VOUT VIN )
L=
2
0.4 VOUT IOUT fOSC
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DS8511A-05 June 2014
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
For recommended operating condition specifications, the
maximum junction temperature is 125°C. The junction to
ambient thermal resistance, θJA, is layout dependent. For
WDFN-8L 2x2 packages, the thermal resistance, θJA, is
120°C/W on a standard JEDEC 51-7 four-layer thermal
test board. For WDFN-8L 3x3 packages, the thermal
resistance, θJA, is 70°C/W on a standard JEDEC 51-7
four-layer thermal test board. The maximum power
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RT8511A
dissipation at TA = 25°C can be calculated by the following
formulas :
Layout Consideration
For high frequency switching power supplies, the PCB
layout is important to obtain good regulation, high
efficiency and stability. The following descriptions are the
suggestions for better PCB layout.
PD(MAX) = (125°C − 25°C) / (120°C/W) = 0.833W for
WDFN-8L 2X2 package
PD(MAX) = (125°C − 25°C) / (70°C/W) = 1.429W for
WDFN-8L 3X3 package
Maximum Power Dissipation (W)1
The maximum power dissipation depends on operating
ambient temperature for fixed T J(MAX) and thermal
resistance, θJA. The derating curves in Figure 6 allow the
designer to see the effect of rising ambient temperature
on the maximum power dissipation.
1.6
Input and output capacitors should be placed close to
the IC and connected to the ground plane to reduce
noise coupling.
The GND and Exposed Pad should be connected to a
strong ground plane for heat sinking and noise protection.
The components L, D, CIN and COUT must be placed as
close as possible to reduce current loop. Keep the main
current traces as possible as short and wide.
The LX node of the DC/DC converter experiences is with
high frequency voltage swings. It should be kept in a
small area.
The component RSET should be placed as close as
possible to the IC and kept away from noisy devices.
8
EN
PWM
VIN
LX
Four-Layer PCB
1.4
1.2
WDFN-8L 3x3
1.0
0.8
0.6
WDFN-8L 2x2
0.4
0.2
0.0
0
25
50
75
100
125
Ambient Temperature (°C)
Figure 6. Derating Curve of Maximum Power Dissipation
Locate RSET close
to FB as possible
R1
OVP
FB
DIMC
CDIMC GND
RSET
:
:
WLEDs :
:
:
:
:
:
:
:
:
:
1
3
GND
R2
6
4
9
5
2
7
D
L
The inductor should be placed
as close as possible to the
switch pin to minimize the noise
coupling into other circuits.
LX node copper area should be
minimized for reducing EMI
VIN
VOUT
The COUT should be connected
directly from the output schottky
diode to ground rather than
across the WLEDs.
COUT CIN
CIN should be placed as
closed as possible to V I N
pin for good filtering.
Figure 7. PCB Layout Guide
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DS8511A-05 June 2014
RT8511A
Outline Dimension
D2
D
L
E
E2
1
e
SEE DETAIL A
b
2
1
2
1
A
A1
A3
DETAIL A
Pin #1 ID and Tie Bar Mark Options
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A3
0.175
0.250
0.007
0.010
b
0.200
0.300
0.008
0.012
D
1.950
2.050
0.077
0.081
D2
1.000
1.250
0.039
0.049
E
1.950
2.050
0.077
0.081
E2
0.400
0.650
0.016
0.026
e
L
0.500
0.300
0.020
0.400
0.012
0.016
W-Type 8L DFN 2x2 Package
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RT8511A
D2
D
L
E
E2
1
e
SEE DETAIL A
b
2
1
2
1
A
A1
A3
DETAIL A
Pin #1 ID and Tie Bar Mark Options
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A3
0.175
0.250
0.007
0.010
b
0.200
0.300
0.008
0.012
D
2.950
3.050
0.116
0.120
D2
2.100
2.350
0.083
0.093
E
2.950
3.050
0.116
0.120
E2
1.350
1.600
0.053
0.063
e
L
0.650
0.425
0.026
0.525
0.017
0.021
W-Type 8L DFN 3x3 Package
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
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