RT9602CS

Preliminary RT9602 Dual Channel Synchronous-Rectified Buck MOSFET Driver General Description The RT9602 is a, twin power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a RT9237/RT9241 series of Multi-Phase Buck PWM controller provide a complete core voltage regulator solution for advanced microprocessors. The RT9602 can provide flexible gate driving for both high side and low side drivers. This gives more flexibility of MOSFET selection. The output drivers in the RT9602 have the capability to drive a 3000pF load with a 40ns propagation delay and 80ns transition time. This device implements bootstrapping on the upper gates with only a single external capacitor required for each power channel. This reduces implementation complexity and allows the use of higher performance, cost effective, NChannel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The RT9602 can detect high side MOSFET drain-tosource electrical short at power on and pull the 12V power by low side MOS and cause power supply to go into over current shutdown to prevent damage of CPU. Features Drives Four N-Channel MOSFETs Adaptive Shoot-Through Protection Internal Bootstrap Devices Small 14-Lead SOIC Package 5V to 12V Gate-Drive Voltages for Optimal Efficiency Tri-State Input for Bridge Shutdown Supply Under-Voltage Protection Power ON Over-Voltage Protection Applications Core Voltage Supplies for Intel Pentium 4 and AMD Athlon TM Microprocessors High Frequency Low Profile DC-DC Converters High Current Low Voltage DC-DC Converters Pin Configurations Part Number RT9602CS (Plastic SOP-14) PWM1 PWM2 GND LGATE1 PVCC PGND LGATE2 1 2 3 4 5 6 7 Pin Configurations TOP VIEW 14 13 12 11 10 9 8 VCC PHASE1 UGATE1 BOOT1 BOOT2 UGATE2 PHASE2 Ordering Information RT9602 Package type S : SOP-14 Operating temperature range C: Commercial standard DS9602-00 January 2002 www.richtek-ic.com.tw 1 RT9602 Pin Description Pin No. Pin Name 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PWM1 PWM2 GND LGATE1 PVCC PGND LGATE2 PHASE2 UGATE2 BOOT2 BOOT1 UGATE1 PHASE1 VCC Channel 1 PWM Input Channel 2 PWM Input Ground Pin Preliminary Pin Function Lower Gate Drive of Channel 1 Upper and Lower Gate Driver Power Rail Lower Gate Driver Ground Pin Lower Gate Drive of Channel 2 Connect this pin to phase point of channel 2. Phase point is the connection point of high side MOSFET source and low side MOSFET drain Upper Gate Drive of Channel 2 Floating Bootstrap Supply Pin of Channel 2 Floating Bootstrap Supply Pin of Channel 1 Upper Gate Drive of Channel 1 Connect this pin to phase point of channel 1. Phase point is the connection point of high side MOSFET source and low side MOSFET drain Control Logic Power Supply www.richtek-ic.com.tw DS9602-00 January 2002 2 Preliminary Function Block Diagram VCC Internal 5V PVCC RT9602 BOOT1 19K PWM1 19K Power-on OVP PVCC Shoot-through Protection UGATE1 PHASE1 Shoot-through Protection LGATE1 PGND PVCC PGND BOOT2 UGATE2 PHASE2 Control Logic Internal 5V 19K PWM2 19K Shoot-through Protection GND Power-on OVP Shoot-through Protection PVCC LGATE2 PGND DS9602-00 January 2002 www.richtek-ic.com.tw 3 RT9602 Absolute Maximum Ratings Supply Voltage (VCC) Supply Voltage (PVCC) BOOT Voltage (VBOOT-VPHASE) Input Voltage (VPWM) UGATE LGATE Package Thermal Resistance SOP-14, θJA Ambient Temperature Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10 sec.) ESD Level HBM MM Preliminary 15V VCC + 0.3V 15V GND–0.3V to 7V VPHASE-0.3V to VBOOT+0.3V GND-0.3V to VPVCC+0.3V 160°C /W 0°C ~ 70°C 0°C ~ 125°C -40°C ~ 150°C 260°C 2KV 200V Electrical Characteristics Parameter VCC Supply Current Bias Supply Current Power Supply Current Power-On Reset VCC Rising Threshold VCC Falling Threshold PWM Input Maximum Input Current PWM Floating Voltage PWM Rising Threshold PWM Falling Threshold UGATE Rise Time LGATE Rise Time UGATE Fall Time LGATE Fall Time UGATE Turn-Off Propagation Delay LGATE Turn-Off Propagation Delay Shutdown Window VPVCC = VVCC = 12V, 3nF load VPVCC = VVCC = 12V, 3nF load VPVCC = VVCC = 12V, 3nF load VPVCC = VVCC = 12V, 3nF load VVCC = VPVCC = 12V, 3nF load VVCC = VPVCC = 12V, 3nF load VPWM = 0 or 5V Vcc=12V ----------1.1 200 1.9 3.7 1.1 30 30 40 30 60 45 -----------3.7 µA V V V ns ns ns ns ns ns V 9.1 7.5 9.6 8.1 10 8.5 V V IVCC IPVCC fPWM = 250KHz, VPVCC = 12V, Cboot = 0.1µF, Rphase = 20Ω fPWM = 250kHz, VPVCC = 12V, Cboot = 0.1µF, Rphase = 20Ω --3 8 --mA mA Symbol Test Conditions Min Typ Max Units To be continued www.richtek-ic.com.tw DS9602-00 January 2002 4 Preliminary Parameter Output Upper Drive Source Upper Drive Sink Lower Drive Source Lower Drive Sink RUGATE VVCC = 12V, VPVCC = 12V RUGATE VVCC = 12V, VPVCC = 12V RLGATE VVCC = 12V, VPVCC = 12V RLGATE VVCC = VPVCC = 12V ----1.5 1.45 1.6 0.75 Symbol Test Conditions Min Typ RT9602 Max -2 -1 Units Ω Ω Ω Ω Operation Descriptions The RT9602 has power on protection function which held UGATE and LGATE low before VCC up across the rising threshold voltage. After the initialization, the PWM signal takes the control. The rising PWM signal first forces the LGATE signal turns low then UGATE signal is allowed to go high just after a nonoverlapping time to avoid shoot-through current. The falling of PWM signal first forces UGATE to go low. When UGATE and PHASE signal reach a predetermined low level, LGATE signal is allowed to turn high. The non-overlapping function is also presented between UGATE and LGATE signal transient. The PWM signal is recognized as high if above rising threshold and as low if below falling threshold. Any signal level in this window is considered as tri-state, which causes turn-off of both high side and low-side MOSFET. When PWM input is floating (not connected), internal divider will pull the PWM to 1.9V to give the controller a recognizable level. The maximum sink/source capability of internal PWM reference is 60µA. The PVCC pin provides flexibility of both high side and low side MOSFET gate drive voltages. If 8V, for example, is applied to PVCC, then high side MOSFET gate drive is 8V-1.5V(approximately, internal diode plus series resistance voltage drop). The low side gate drive voltage is exactly 8V. The RT9602 implements a power on over-voltage protection function. If the PHASE voltage exceeds 1.5V at power on, the LGATE would be turn on to pull the PHASE low until the PHASE voltage goes below 1.5V. Such function can protect the CPU from damage by some short condition happened before power on, which is sometimes encountered in the M/B manufacturing line. DS9602-00 January 2002 www.richtek-ic.com.tw 5 6 +5V 1µF 12V 1.2µH 1000 µF 1µF 12 PHB83N03LT 13 PHASE1 2µH 3K 12 ×1500µF 3K 14 13 PHB95N03LT UGATE1 PVCC 5 BOOT1 PGOOD 1µF 11 14 VCC 10K VDD PGOOD PWM1 ISP1 ISN1 VSEN GND ISP2 15 3K 11 3K 16 2µH ×1500µF 1µF PHB83N03LT 1000µF 1µF 18 17 19 20 10Ω 1µF 12V PWM1 1 RT9602 www.richtek-ic.com.tw VID4 1 Typical Application Circuit +5V VID4 VID3 2 VID3 VID2 3 VID2 VID1 4 VID1 2.4K 15K VID0 5 VID0 RT9602 4 LGATE1 PWM2 9 UGATE2 2 6 66pF COMP 7 FB 8 ADJ Preliminary 2.4K 8 PHASE2 GND 3 PGND 6 12V ISN2 PWM2 9 18K DVD 10 3K SS 0.1µF 7 LGATE2 BOOT2 10 RT9241 PHB95N03LT DS9602-00 January 2002 VCORE Preliminary Package Information RT9602 H M B B J A C F D I Symbol A B C D F H I J M Dimensions In Millimeters Min 8.534 3.810 1.346 0.330 1.194 0.178 0.102 5.791 0.406 Max 8.738 3.988 1.753 0.508 1.346 0.254 0.254 6.198 1.270 Dimensions In Inches Min 0.336 0.150 0.053 0.013 0.047 0.007 0.004 0.228 0.016 Max 0.344 0.157 0.069 0.020 0.053 0.010 0.010 0.244 0.050 14–Lead SOP Plastic Package DS9602-00 January 2002 www.richtek-ic.com.tw 7 RT9602 Preliminary RICHTEK TECHNOLOGY CORP. Headquarter 6F, No. 35, Hsintai Road, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5510047 Fax: (8863)5537749 RICHTEK TECHNOLOGY CORP. Taipei Office (Marketing) 8F-1, No. 137, Lane 235, Paochiao Road, Hsintien City Taipei County, Taiwan, R.O.C. Tel: (8862)89191466 Fax: (8862)89191465 Email: marketing@richtek-ic.com.tw www.richtek-ic.com.tw DS9602-00 January 2002 8