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RT9607APS

RT9607APS

  • 厂商:

    RICHTEK(台湾立绮)

  • 封装:

  • 描述:

    IC REG

  • 数据手册
  • 价格&库存
RT9607APS 数据手册
RT9607/A Dual Channel Synchronous-Rectified Buck MOSFET Driver General Description Features The RT9607/A is a dual power channel MOSFET driver z Drives Four N-MOSFETs specifically designed to drive four power N-MOSFETs in a z Adaptive Shoot-Through Protection synchronous-rectified buck converter topology. These drivers combined with RichTek’ s series of Multi-Phase z Propagation Delay 40ns z Buck PWM controllers provide a complete core voltage z Support High Switching Frequency Fast Output Rise Time regulator solution for advanced microprocessors. z 5V to 12V Gate-Drive Voltages for Optimal Efficiency z Tri-State Input for Bridge Shutdown Supply Under-Voltage Protection RoHS Compliant and 100% Lead (Pb)-Free The RT9607/A can provide flexible gate driving for both high side and low side drivers. This gives more flexibility of MOSFET selection. The output drivers of the part are capble to driver a 3nF load in 30/40ns rising/falling time with fast propagation delay from input transition to the gate of the power MOSFET. This device implements bootstrapping on the upper gates with only a single external capacitor required for each power channel. This reduces implementation complexity and allows the use of higher performance, cost effective, N-MOSFETs. Adaptive shoot-through protect-ion is integrated to prevent both MOSFETs from conducting simultaneously. z z Applications z z z Core Voltage Supplies for motherboard/desktop PC microprocessor core power High Frequency Low Profile DC-DC Converters High Current Low Voltage DC-DC Converters Ordering Information RT9607/A Package Type QV : VQFN-16L 3x3 (V-Type) S : SOP-14 The RT9607/A can detect high side MOSFET drain-tosource electrical short at power on and pull the 12V power by low side MOS and cause power supply to go into over current shutdown to prevent damage of CPU. RT9607 has longer UGATE/LGATE dead time which can drive the MOSFETs with large gate RC value, avoiding the shoot-through phenomenon. RT9607A is targeted to drive small gate RC value MOSFETs and performs better efficiency. Lead Plating System P : Pb Free G : Green (Halogen Free and Pb Free) Short Dead Time Long Dead Time Note : Richtek products are : ` RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020. ` Suitable for use in SnPb or Pb-free soldering processes. Marking Information For marking information, contact our sales representative directly or through a Richtek distributor located in your area. DS9607/A-07 April 2011 www.richtek.com 1 RT9607/A Pin Configurations PHASE1 VCC PWM1 PWM2 (TOP VIEW) PWM1 PWM2 GND LGATE1 PVCC PGND LGATE2 16 15 14 13 NC 3 PGND 4 GND 17 5 6 7 8 NC 2 PHASE2 LGATE1 PVCC 1 LGATE2 GND 12 UGATE1 11 BOOT1 10 BOOT2 9 UGATE2 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC PHASE1 UGATE1 BOOT1 BOOT2 UGATE2 PHASE2 SOP-14 VQFN-16L 3x3 Typical Application Circuit Optional 12V 12V 11 BOOT1 12 13 UGATE1 14 VCC PVCC 5 PHASE1 PWM1 1 From Controller PWM1 RT9607/A 4 VCORE 9 8 7 LGATE1 PWM2 2 From Controller PWM2 UGATE2 PHASE2 GND LGATE2 PGND 3 6 BOOT2 10 Optional www.richtek.com 2 DS9607/A-07 April 2011 RT9607/A Timing Diagram PWM tpdlLGATE 90% LGATE tpdlUGATE 2V 2V 90% 2V 2V UGATE tpdhUGATE tpdhLGATE Functional Pin Description Pin No. Pin Name Pin Function RT9607/A□S RT9607/A□QV 1 15 PWM1 Channel 1 PWM Input. 2 16 PWM2 Channel 2 PWM Input. 3 1 GND Ground Pin. 4 2 LGATE1 Lower Gate Drive of Channel 1. 5 5 PVCC Upper and Lower Gate Driver Power Rail. 6 4 PGND Lower Gate Driver Ground Pin. 7 6 LGATE2 Lower Gate Drive of Channel 2. 8 7 PHASE2 9 9 UGATE2 Upper Gate Drive of Channel 2. 10 10 BOOT2 Floating Bootstrap Supply Pin of Channel 2. 11 11 BOOT1 Floating Bootstrap Supply Pin of Channel 1. 12 12 UGATE1 Upper Gate Drive of Channel 1. 13 13 PHASE1 14 14 VCC Control Logic Power Supply. -- 3, 8 NC No Connection. Connect this pin to phase point of Channel 2. Phase point is the connection point of high side MOSFET source Connect this pin to phase point of Channel 1. -- Exposed Pad (17) GND DS9607/A-07 April 2011 Phase point is the connection point of high side MOSFET source The exposed pad must be soldered to a large PCB and connected to GND for maximum power dissipation. www.richtek.com 3 RT9607/A Function Block Diagram PVCC VCC BOOT1 Internal 5V Shoot-Through Protection UGATE1 R PWM1 Power-On OVP PHASE1 R PVCC Shoot-Through Protection Internal 5V Control Logic LGATE1 PGND PGND PVCC BOOT2 Shoot-Through Protection UGATE2 R PWM2 R Power-On OVP PHASE2 PVCC Shoot-Through Protection GND www.richtek.com 4 LGATE2 PGND DS9607/A-07 April 2011 RT9607/A Absolute Maximum Ratings (Note 1) z Supply Voltage, VCC ------------------------------------------------------------------------------------- 15V z Supply Voltage, PVCC ----------------------------------------------------------------------------------- VCC + 0.3V z z BOOT Voltage, VBOOT-VPHASE ------------------------------------------------------------------------- 15V Input Voltage, VPWM -------------------------------------------------------------------------------------- GND - 0.3V to 7V z PHASE to GND DC ------------------------------------------------------------------------------------------------------------ −5V to 15V < 200ns ----------------------------------------------------------------------------------------------------- −10V to 30V z z z z z z z z BOOT to GND DC -----------------------------------------------------------------------------------------------------------< 200ns ----------------------------------------------------------------------------------------------------UGATE -----------------------------------------------------------------------------------------------------LGATE -----------------------------------------------------------------------------------------------------< 200ns ----------------------------------------------------------------------------------------------------Power Dissipation, PD @ TA = 25°C VQFN−16L 3x3 -------------------------------------------------------------------------------------------SOP-14 ----------------------------------------------------------------------------------------------------Package Thermal Resistance (Note 2) VQFN−16L 3x3, θJA -------------------------------------------------------------------------------------SOP-14, θJA ----------------------------------------------------------------------------------------------Storage Temperature Range --------------------------------------------------------------------------Lead Temperature (Soldering, 10 sec.) -------------------------------------------------------------ESD Susceptibility (Note 3) HBM (Human Body Mode) ----------------------------------------------------------------------------MM (Machine Mode) ------------------------------------------------------------------------------------- Recommended Operating Conditions z z z −0.3V to VCC + 15V −0.3V to 42V VPHASE - 0.3V to VBOOT + 0.3V GND - 0.3V to VPVCC + 0.3V −2V to VCC + 0.3V 1.471W 0.909W 68°C/W 110°C /W −40°C to 150°C 260°C 2kV 200V (Note 4) Supply Voltage, VCC ------------------------------------------------------------------------------------- 12V ±10% Junction Temperature Range --------------------------------------------------------------------------- 0°C to 125°C Ambient Temperature Range --------------------------------------------------------------------------- 0°C to 70°C Electrical Characteristics (Recommended Operating Conditions, TA = 25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units VCC Supply Current Bias Supply Current IVCC fPWM = 250kHz, VPVCC = 12V, CBOOT = 0.1μF, RPHASE = 20Ω -- 5.5 8.0 mA Power Supply Current IPVCC fPWM = 250kHz, VPVCC = 12V, CBOOT = 0.1μF, RPHASE = 20Ω -- 5.5 10.0 mA VCC Rising Threshold -- 8.0 -- V Hysteresis -- 1.0 -- V Power-On Reset To be continued DS9607/A-07 April 2011 www.richtek.com 5 RT9607/A Parameter Symbol Test Conditions Min Typ Max Units PWM Input Maximum Input Current VPWM = 0 or 5V -- 500 -- μA PWM Floating Voltage Vcc = 12V -- 2.5 -- V PWM Rising Threshold 3.3 3.7 4.3 V PWM Falling Threshold 1.0 1.26 1.5 V Output UGATE Rise Time trUGATE VPVCC = VVCC = 12V, 3nF load -- 30 -- ns UGATE Fall Time tfUGATE VPVCC = VVCC = 12V, 3nF load -- 40 -- ns LGATE Rise Time trLGATE VPVCC = VVCC = 12V, 3nF load -- 30 -- ns LGATE Fall Time tfLGATE VPVCC = VVCC = 12V, 3nF load -- 30 -- ns -- 75 -- -- 25 -- -- 40 -- -- 20 -- -- 35 -- 1.0 -- 4.3 V RT9607 RT9607A Propagation Delay RT9607/A tpdhUGATE VBOOT = VPHASE = 12V See Timing Diagram tpdlUGATE tpdhLGATE See Timing Diagram tpdlLGATE Shutdown Window ns UGATE Drive Source RUGATEsr VBOOT – VPHASE = 12V -- 1.8 -- Ω UGATE Drive Sink RUGATEsk VBOOT – VPHASE = 12V -- 1.7 -- Ω LGATE Drive Source RLGATEsr VCC = 12V -- 1.5 -- Ω LGATE Drive Sink RLGATEsk VCC = 12V -- 1.4 -- Ω Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. Note 2. θJA is measured in the natural convection at TA = 25°C on a high effective thermal conductivity test board (2S2P,4-layers) of JEDEC 51-7 thermal measurement standard. Note 3. Devices are ESD sensitive. Handling precaution recommended. Note 4. The device is not guaranteed to function outside its operating conditions. www.richtek.com 6 DS9607/A-07 April 2011 RT9607/A Typical Operating Characteristics For RT9607 Dead Time at LGATE Falling Dead Time at LGATE Falling Full Load (60A), PHASE1 Full Load (60A), PHASE2 UGATE UGATE PHASE PHASE (5V/Div) (5V/Div) LGATE LGATE (5V/Div) Time (25ns/Div) Time (25ns/Div) Dead Time at LGATE Rising Dead Time at LGATE Rising Full Load (60A), PHASE1 Full Load (60A), PHASE2 UGATE UGATE PHASE PHASE (5V/Div) LGATE LGATE Time (25ns/Div) Time (25ns/Div) Dead Time at LGATE Falling Dead Time at LGATE Falling No Load, PHASE2 No Load, PHASE1 UGATE UGATE PHASE PHASE (5V/Div) LGATE Time (50ns/Div) DS9607/A-07 April 2011 (5V/Div) LGATE Time (50ns/Div) www.richtek.com 7 RT9607/A Dead Time at LGATE Rising Dead Time at LGATE Rising No Load, PHASE1 No Load, PHASE2 UGATE UGATE PHASE PHASE (5V/Div) (5V/Div) LGATE LGATE Time (50ns/Div) www.richtek.com 8 Time (50ns/Div) DS9607/A-07 April 2011 RT9607/A For RT9607A Dead Time at LGATE Falling Full Load (60A), PHASE1 Full Load (60A), PHASE2 UGATE UGATE PHASE PHASE LGATE - PHASE LGATE - PHASE (5V/Div) (5V/Div) Dead Time at LGATE Falling LGATE (5V/Div) LGATE Time (25ns/Div) Time (25ns/Div) Dead Time at LGATE Rising Dead Time at LGATE Rising Full Load (60A), PHASE1 Full Load (60A), PHASE2 UGATE UGATE PHASE PHASE LGATE - PHASE LGATE - PHASE (5V/Div) LGATE LGATE Time (25ns/Div) Time (25ns/Div) Dead Time at LGATE Falling Dead Time at LGATE Falling No Load , PHASE1 (5V/Div) DS9607/A-07 April 2011 UGATE PHASE PHASE LGATE - PHASE LGATE - PHASE LGATE Time (25ns/Div) No Load , PHASE2 UGATE (5V/Div) LGATE Time (25ns/Div) www.richtek.com 9 RT9607/A Dead Time at LGATE Rising Dead Time at LGATE Rising (5V/Div) No Load, PHASE1 No Load, PHASE2 UGATE UGATE PHASE PHASE LGATE - PHASE LGATE - PHASE (5V/Div) LGATE Time (25ns/Div) www.richtek.com 10 LGATE Time (25ns/Div) DS9607/A-07 April 2011 RT9607/A Application Information if the PHASE pin had not gone high after LGATE turns The RT9607/A has power on protection function which held low, the LGATE has to wait for 200ns before turn high only under short pulse (tON
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