RT9607/A
Dual Channel Synchronous-Rectified Buck MOSFET Driver
General Description
Features
The RT9607/A is a dual power channel MOSFET driver
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Drives Four N-MOSFETs
specifically designed to drive four power N-MOSFETs in a
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Adaptive Shoot-Through Protection
synchronous-rectified buck converter topology. These
drivers combined with RichTek’ s series of Multi-Phase
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Propagation Delay 40ns
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Buck PWM controllers provide a complete core voltage
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Support High Switching Frequency
Fast Output Rise Time
regulator solution for advanced microprocessors.
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5V to 12V Gate-Drive Voltages for Optimal Efficiency
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Tri-State Input for Bridge Shutdown
Supply Under-Voltage Protection
RoHS Compliant and 100% Lead (Pb)-Free
The RT9607/A can provide flexible gate driving for both
high side and low side drivers. This gives more flexibility
of MOSFET selection.
The output drivers of the part are capble to driver a 3nF
load in 30/40ns rising/falling time with fast propagation
delay from input transition to the gate of the power
MOSFET. This device implements bootstrapping on the
upper gates with only a single external capacitor required
for each power channel. This reduces implementation
complexity and allows the use of higher performance, cost
effective, N-MOSFETs. Adaptive shoot-through protect-ion
is integrated to prevent both MOSFETs from conducting
simultaneously.
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Applications
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Core Voltage Supplies for motherboard/desktop PC
microprocessor core power
High Frequency Low Profile DC-DC Converters
High Current Low Voltage DC-DC Converters
Ordering Information
RT9607/A
Package Type
QV : VQFN-16L 3x3 (V-Type)
S : SOP-14
The RT9607/A can detect high side MOSFET drain-tosource electrical short at power on and pull the 12V power
by low side MOS and cause power supply to go into over
current shutdown to prevent damage of CPU.
RT9607 has longer UGATE/LGATE dead time which can
drive the MOSFETs with large gate RC value, avoiding
the shoot-through phenomenon. RT9607A is targeted to
drive small gate RC value MOSFETs and performs better
efficiency.
Lead Plating System
P : Pb Free
G : Green (Halogen Free and Pb Free)
Short Dead Time
Long Dead Time
Note :
Richtek products are :
`
RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.
`
Suitable for use in SnPb or Pb-free soldering processes.
Marking Information
For marking information, contact our sales representative
directly or through a Richtek distributor located in your
area.
DS9607/A-07 April 2011
www.richtek.com
1
RT9607/A
Pin Configurations
PHASE1
VCC
PWM1
PWM2
(TOP VIEW)
PWM1
PWM2
GND
LGATE1
PVCC
PGND
LGATE2
16 15 14 13
NC
3
PGND
4
GND
17
5
6
7
8
NC
2
PHASE2
LGATE1
PVCC
1
LGATE2
GND
12
UGATE1
11
BOOT1
10
BOOT2
9
UGATE2
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
PHASE1
UGATE1
BOOT1
BOOT2
UGATE2
PHASE2
SOP-14
VQFN-16L 3x3
Typical Application Circuit
Optional
12V
12V
11
BOOT1
12
13
UGATE1
14
VCC
PVCC
5
PHASE1 PWM1 1
From Controller
PWM1
RT9607/A
4
VCORE
9
8
7
LGATE1
PWM2
2
From Controller
PWM2
UGATE2
PHASE2
GND
LGATE2
PGND
3
6
BOOT2
10
Optional
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2
DS9607/A-07 April 2011
RT9607/A
Timing Diagram
PWM
tpdlLGATE
90%
LGATE
tpdlUGATE
2V
2V
90%
2V
2V
UGATE
tpdhUGATE
tpdhLGATE
Functional Pin Description
Pin No.
Pin Name
Pin Function
RT9607/A□S
RT9607/A□QV
1
15
PWM1
Channel 1 PWM Input.
2
16
PWM2
Channel 2 PWM Input.
3
1
GND
Ground Pin.
4
2
LGATE1
Lower Gate Drive of Channel 1.
5
5
PVCC
Upper and Lower Gate Driver Power Rail.
6
4
PGND
Lower Gate Driver Ground Pin.
7
6
LGATE2
Lower Gate Drive of Channel 2.
8
7
PHASE2
9
9
UGATE2
Upper Gate Drive of Channel 2.
10
10
BOOT2
Floating Bootstrap Supply Pin of Channel 2.
11
11
BOOT1
Floating Bootstrap Supply Pin of Channel 1.
12
12
UGATE1
Upper Gate Drive of Channel 1.
13
13
PHASE1
14
14
VCC
Control Logic Power Supply.
--
3, 8
NC
No Connection.
Connect this pin to phase point of Channel 2.
Phase point is the connection point of high side MOSFET source
Connect this pin to phase point of Channel 1.
--
Exposed Pad (17) GND
DS9607/A-07 April 2011
Phase point is the connection point of high side MOSFET source
The exposed pad must be soldered to a large PCB and connected
to GND for maximum power dissipation.
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3
RT9607/A
Function Block Diagram
PVCC
VCC
BOOT1
Internal
5V
Shoot-Through
Protection
UGATE1
R
PWM1
Power-On OVP
PHASE1
R
PVCC
Shoot-Through
Protection
Internal
5V
Control
Logic
LGATE1
PGND
PGND
PVCC
BOOT2
Shoot-Through
Protection
UGATE2
R
PWM2
R
Power-On OVP
PHASE2
PVCC
Shoot-Through
Protection
GND
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4
LGATE2
PGND
DS9607/A-07 April 2011
RT9607/A
Absolute Maximum Ratings
(Note 1)
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Supply Voltage, VCC ------------------------------------------------------------------------------------- 15V
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Supply Voltage, PVCC ----------------------------------------------------------------------------------- VCC + 0.3V
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BOOT Voltage, VBOOT-VPHASE ------------------------------------------------------------------------- 15V
Input Voltage, VPWM -------------------------------------------------------------------------------------- GND - 0.3V to 7V
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PHASE to GND
DC ------------------------------------------------------------------------------------------------------------ −5V to 15V
< 200ns ----------------------------------------------------------------------------------------------------- −10V to 30V
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BOOT to GND
DC -----------------------------------------------------------------------------------------------------------< 200ns ----------------------------------------------------------------------------------------------------UGATE -----------------------------------------------------------------------------------------------------LGATE -----------------------------------------------------------------------------------------------------< 200ns ----------------------------------------------------------------------------------------------------Power Dissipation, PD @ TA = 25°C
VQFN−16L 3x3 -------------------------------------------------------------------------------------------SOP-14 ----------------------------------------------------------------------------------------------------Package Thermal Resistance (Note 2)
VQFN−16L 3x3, θJA -------------------------------------------------------------------------------------SOP-14, θJA ----------------------------------------------------------------------------------------------Storage Temperature Range --------------------------------------------------------------------------Lead Temperature (Soldering, 10 sec.) -------------------------------------------------------------ESD Susceptibility (Note 3)
HBM (Human Body Mode) ----------------------------------------------------------------------------MM (Machine Mode) -------------------------------------------------------------------------------------
Recommended Operating Conditions
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−0.3V to VCC + 15V
−0.3V to 42V
VPHASE - 0.3V to VBOOT + 0.3V
GND - 0.3V to VPVCC + 0.3V
−2V to VCC + 0.3V
1.471W
0.909W
68°C/W
110°C /W
−40°C to 150°C
260°C
2kV
200V
(Note 4)
Supply Voltage, VCC ------------------------------------------------------------------------------------- 12V ±10%
Junction Temperature Range --------------------------------------------------------------------------- 0°C to 125°C
Ambient Temperature Range --------------------------------------------------------------------------- 0°C to 70°C
Electrical Characteristics
(Recommended Operating Conditions, TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
VCC Supply Current
Bias Supply Current
IVCC
fPWM = 250kHz, VPVCC = 12V,
CBOOT = 0.1μF, RPHASE = 20Ω
--
5.5
8.0
mA
Power Supply Current
IPVCC
fPWM = 250kHz, VPVCC = 12V,
CBOOT = 0.1μF, RPHASE = 20Ω
--
5.5
10.0
mA
VCC Rising Threshold
--
8.0
--
V
Hysteresis
--
1.0
--
V
Power-On Reset
To be continued
DS9607/A-07 April 2011
www.richtek.com
5
RT9607/A
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
PWM Input
Maximum Input Current
VPWM = 0 or 5V
--
500
--
μA
PWM Floating Voltage
Vcc = 12V
--
2.5
--
V
PWM Rising Threshold
3.3
3.7
4.3
V
PWM Falling Threshold
1.0
1.26
1.5
V
Output
UGATE Rise Time
trUGATE
VPVCC = VVCC = 12V, 3nF load
--
30
--
ns
UGATE Fall Time
tfUGATE
VPVCC = VVCC = 12V, 3nF load
--
40
--
ns
LGATE Rise Time
trLGATE
VPVCC = VVCC = 12V, 3nF load
--
30
--
ns
LGATE Fall Time
tfLGATE
VPVCC = VVCC = 12V, 3nF load
--
30
--
ns
--
75
--
--
25
--
--
40
--
--
20
--
--
35
--
1.0
--
4.3
V
RT9607
RT9607A
Propagation Delay
RT9607/A
tpdhUGATE VBOOT = VPHASE = 12V
See Timing Diagram
tpdlUGATE
tpdhLGATE
See Timing Diagram
tpdlLGATE
Shutdown Window
ns
UGATE Drive Source
RUGATEsr VBOOT – VPHASE = 12V
--
1.8
--
Ω
UGATE Drive Sink
RUGATEsk VBOOT – VPHASE = 12V
--
1.7
--
Ω
LGATE Drive Source
RLGATEsr
VCC = 12V
--
1.5
--
Ω
LGATE Drive Sink
RLGATEsk VCC = 12V
--
1.4
--
Ω
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a high effective thermal conductivity test board (2S2P,4-layers)
of JEDEC 51-7 thermal measurement standard.
Note 3. Devices are ESD sensitive. Handling precaution recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
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6
DS9607/A-07 April 2011
RT9607/A
Typical Operating Characteristics
For RT9607
Dead Time at LGATE Falling
Dead Time at LGATE Falling
Full Load (60A), PHASE1
Full Load (60A), PHASE2
UGATE
UGATE
PHASE
PHASE
(5V/Div)
(5V/Div)
LGATE
LGATE
(5V/Div)
Time (25ns/Div)
Time (25ns/Div)
Dead Time at LGATE Rising
Dead Time at LGATE Rising
Full Load (60A), PHASE1
Full Load (60A), PHASE2
UGATE
UGATE
PHASE
PHASE
(5V/Div)
LGATE
LGATE
Time (25ns/Div)
Time (25ns/Div)
Dead Time at LGATE Falling
Dead Time at LGATE Falling
No Load, PHASE2
No Load, PHASE1
UGATE
UGATE
PHASE
PHASE
(5V/Div)
LGATE
Time (50ns/Div)
DS9607/A-07 April 2011
(5V/Div)
LGATE
Time (50ns/Div)
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7
RT9607/A
Dead Time at LGATE Rising
Dead Time at LGATE Rising
No Load, PHASE1
No Load, PHASE2
UGATE
UGATE
PHASE
PHASE
(5V/Div)
(5V/Div)
LGATE
LGATE
Time (50ns/Div)
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8
Time (50ns/Div)
DS9607/A-07 April 2011
RT9607/A
For RT9607A
Dead Time at LGATE Falling
Full Load (60A), PHASE1
Full Load (60A), PHASE2
UGATE
UGATE
PHASE
PHASE
LGATE - PHASE
LGATE - PHASE
(5V/Div)
(5V/Div)
Dead Time at LGATE Falling
LGATE
(5V/Div)
LGATE
Time (25ns/Div)
Time (25ns/Div)
Dead Time at LGATE Rising
Dead Time at LGATE Rising
Full Load (60A), PHASE1
Full Load (60A), PHASE2
UGATE
UGATE
PHASE
PHASE
LGATE - PHASE
LGATE - PHASE
(5V/Div)
LGATE
LGATE
Time (25ns/Div)
Time (25ns/Div)
Dead Time at LGATE Falling
Dead Time at LGATE Falling
No Load , PHASE1
(5V/Div)
DS9607/A-07 April 2011
UGATE
PHASE
PHASE
LGATE - PHASE
LGATE - PHASE
LGATE
Time (25ns/Div)
No Load , PHASE2
UGATE
(5V/Div)
LGATE
Time (25ns/Div)
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9
RT9607/A
Dead Time at LGATE Rising
Dead Time at LGATE Rising
(5V/Div)
No Load, PHASE1
No Load, PHASE2
UGATE
UGATE
PHASE
PHASE
LGATE - PHASE
LGATE - PHASE
(5V/Div)
LGATE
Time (25ns/Div)
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10
LGATE
Time (25ns/Div)
DS9607/A-07 April 2011
RT9607/A
Application Information
if the PHASE pin had not gone high after LGATE turns
The RT9607/A has power on protection function which held
low, the LGATE has to wait for 200ns before turn high
only under short pulse (tON
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