®
RT9610C
High Voltage Synchronous Rectified Buck MOSFET Driver
for Notebook Computer
General Description
Features
The RT9610C is a high frequency, dual MOSFET driver
specifically designed to drive two power N-MOSFETS in
a synchronous-rectified buck converter topology. It is
especially suited for mobile computing applications that
require high efficiency and excellent thermal performance.
This driver, combined with Richtek's series of multi-phase
Buck PWM controllers, provides a complete core voltage
regulator solution for advanced microprocessors.
The drivers are capable of driving a 3nF load with fast
rising/falling time and fast propagation delay. This device
implements bootstrapping on the upper gates with only a
single external capacitor. This reduces implementation
complexity and allows the use of higher performance, cost
effective, N-MOSFETs. Adaptive shoot through protection
is integrated to prevent both MOSFETs from conducting
simultaneously.
The RT9610C is available in WDFN-8L 2x2 Package.
Drives Two N-MOSFETs
Adaptive Shoot-Through Protection
0.5Ω
Ω On-Resistance, 4A Sink Current Capability
Supports High Switching Frequency
Tri-State PWM Input for Power Stage Shutdown
Output Disable Function
Integrated Boost Switch
Low Bias Supply Current
VCC POR Feature Integrated
Applications
Core Voltage Supplies for Intel ® / AMD ® Mobile
Microprocessors
High Frequency Low Profile DC/DC Converters
High Current Low Output Voltage DC/DC Converters
High Input Voltage DC/DC Converters
Ordering Information
RT9610C
Marking Information
Package Type
QW : WDFN-8L 2x2 (W-Type)
2Q : Product Code
2QW
Lead Plating System
G : Green (Halogen Free and Pb Free)
W : Date Code
Note :
Richtek products are :
RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.
Suitable for use in SnPb or Pb-free soldering processes.
Simplified Application Circuit
VIN
RT9610C
VCC
VCC
UGATE
BOOT
Enable
PWM
EN
PHASE
PWM
LGATE
GND
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
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1
RT9610C
Pin Configurations
EN
PHASE
UGATE
BOOT
1
2
3
4
GND
(TOP VIEW)
9
8
7
6
5
VCC
LGATE
GND
PWM
WDFN-8L 2x2
Functional Pin Description
Pin No.
Pin Name
Pin Function
Enable Pin. When low, both UGATE and LGATE are driven low and the normal
operation is disabled.
1
EN
2
PHASE
Switch Node. Connect this pin to the source of the upper MOSFET and the drain
of the lower MOSFET. This pin provides a return path for the upper gate driver.
3
UGATE
Upper Gate Drive Output. Connect to the gate of high side power N-MOSFET.
4
BOOT
Floating Bootstrap Supply Pin for Upper Gate Drive. Connect the bootstrap
capacitor between this pin and the PHASE pin. The bootstrap capacitor
provides the charge to turn on the upper MOSFET.
5
PWM
Control Input for Driver. The PWM signal can enter three distinct states during
operation. Connect this pin to the PWM output of the controller.
6,
GND
9 (Exposed Pad)
Ground. The exposed pad must be soldered to a large PCB and connected to
GND for maximum power dissipation.
7
LGATE
Lower Gate Drive Output. Connect to the gate of the low side power
N-MOSFET.
8
VCC
Input Supply Pin. Connect this pin to a 5V bias supply. Place a high quality
bypass capacitor from this pin to GND.
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is a registered trademark of Richtek Technology Corporation.
DS9610C-01 April 2016
RT9610C
Functional Block Diagram
VCC
BOOT
POR
UGATE
Control
Logic
EN
Shoot-Through
Protection
PHASE
VCC
VCC
LGATE
R
GND
Tri-State
Detect
PWM
R
Operation
POR (Power On Reset)
Control Logic
POR block detects the voltage at the VCC pin. When the
VCC pin voltage is higher than POR rising threshold, the
POR pin output voltage (POR output) is high. POR output
is low when VCC is not higher than POR rising threshold.
When the POR pin voltage is high, UGATE and LGATE
can be controlled by PWM input voltage. If the POR pin
voltage is low, both UGATE and LGATE will be pulled to
low.
Control logic block detects whether high side MOSFET
is turned off by monitoring (UGATE - PHASE) voltages
below 1.1V or PHASE voltage below 2V. To prevent the
overlap of the gate drives during the UGATE pulls low and
the LGATE pulls high, low side MOSFET can be turned
on only after high side MOSFET is effectively turned off.
Tri-State Detect
When both POR output and EN pin voltages are high,
UGATE and LGATE can be controlled by PWM input. There
are three PWM input modes which are high, low, and
shutdown state. If PWM input is within the shutdown
window, both UGATE and LGATE outputs are low. When
PWM input is higher than its rising threshold, UGATE is
high and LGATE is low. When PWM input is lower than
its falling threshold, UGATE is low and LGATE is high.
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS9610C-01 April 2016
Shoot-Through Protection
Shoot-through protection block implements the dead-time
when both high side and low side MOSFETs are turned
off. With shoot-through protection block, high side and
low side MOSFETs are never turned on simultaneously.
Thus, shoot-through between high side and low side
MOSFETs is prevented.
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RT9610C
Absolute Maximum Ratings
(Note 1)
Supply Voltage, VCC ------------------------------------------------------------------------------------------------------- −0.3V to 6V
BOOT to PHASE ------------------------------------------------------------------------------------------------------------ −0.3V to 6V
PHASE to GND
DC ------------------------------------------------------------------------------------------------------------------------------- −0.3V to 32V
< 20ns ------------------------------------------------------------------------------------------------------------------------- −8V to 38V
UGATE to PHASE
DC ------------------------------------------------------------------------------------------------------------------------------- −0.3V to 6V
< 20ns ------------------------------------------------------------------------------------------------------------------------- −5V to 7.5V
LGATE to GND
DC ------------------------------------------------------------------------------------------------------------------------------- −0.3V to 6V
< 20ns ------------------------------------------------------------------------------------------------------------------------- −2.5V to 7.5V
PWM, EN to GND ---------------------------------------------------------------------------------------------------------- −0.3V to 6V
Power Dissipation, PD @ TA = 25°C
WDFN-8L 2x2 ---------------------------------------------------------------------------------------------------------------- 2.19W
Package Thermal Resistance (Note 2)
WDFN-8L 2x2, θJA ----------------------------------------------------------------------------------------------------------- 45.5°C/W
WDFN-8L 2x2, θJC ---------------------------------------------------------------------------------------------------------- 11.5°C/W
Junction Temperature ------------------------------------------------------------------------------------------------------- 150°C
Lead Temperature (Soldering, 10 sec.) --------------------------------------------------------------------------------- 260°C
Storage Temperature Range ---------------------------------------------------------------------------------------------- −65°C to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Model) ------------------------------------------------------------------------------------------------ 2kV
Recommended Operating Conditions
(Note 4)
Input Voltage, VIN ----------------------------------------------------------------------------------------------------------- 4.5V to 26V
Control Voltage, VCC ------------------------------------------------------------------------------------------------------- 4.5V to 5.5V
Ambient Temperature Range ---------------------------------------------------------------------------------------------- −40°C to 85°C
Junction Temperature Range ---------------------------------------------------------------------------------------------- −40°C to 125°C
Electrical Characteristics
(VCC = 5V, TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCC Supply Current
Quiescent Current
IQ
PWM Pin Floating, VEN = 3.3V
--
80
--
A
Shutdown Current
ISHDN
VEN = 0V, PWM = 0V, VCC = 5V
--
0
5
A
VPORH
VCC POR Rising
--
4.2
4.5
V
VCC Power On Reset (POR) VPORL
VCC POR Falling
3.5
3.84
--
V
--
360
--
mV
--
--
80
VPORHYS Hysteresis
Internal BOOT Switch
Internal Boost Switch On
Resistance
RBOOT
VCC to BOOT, 10mA
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DS9610C-01 April 2016
RT9610C
Parameter
Symbol
Test Conditions
Min
Typ
Max
VPWM = 5V
--
174
--
VPWM = 0V
--
174
--
Unit
PWM Input
Input Current
IPWM
A
PWM Tri-State Rising Threshold
VPWMH
VCC = 5V
3.5
3.8
4.1
V
PWM Tri-State Falling Threshold
VPWML
VCC = 5V
0.7
1
1.3
V
EN Input
Logic-High
VENH
VCC = 5V
1.4
--
--
Logic-Low
VENL
VCC = 5V
--
--
0.48
UGATE Rise Time
tUGATEr
VCC = 5V, 3nF Load
--
8
--
ns
UGATE Fall Time
tUGATEf
VCC = 5V, 3nF Load
--
8
--
ns
LGATE Rise Time
tLGATEr
VCC = 5V, 3nF Load
--
8
--
ns
LGATE Fall Time
tLGATEf
VCC = 5V, 3nF Load
--
4
--
ns
UGATE Turn-Off Propagation Delay tPDLU
VCC = 5V, Outputs Unloaded
--
35
--
ns
LGATE Turn-Off Propagation Delay
tPDLL
VCC = 5V, Outputs Unloaded
--
35
--
ns
UGATE Turn-On Propagation Delay tPDHU
VCC = 5V, Outputs Unloaded
--
20
--
ns
LGATE Turn-On Propagation Delay
tPDHL
VCC = 5V, Outputs Unloaded
--
20
--
ns
UGATE/LGATE Tri-State
Propagation Delay
tPTS
VCC = 5V, Outputs Unloaded
--
35
--
ns
UGATE Driver Source Resistance
RUGATEsr
100mA Source Current
--
1
--
UGATE Driver Source Current
IUGATEsr
VUGATE VPHASE = 2.5V
--
2
--
A
UGATE Driver Sink Resistance
RUGATEsk
100mA Sink Current
--
1
--
UGATE Driver Sink Current
IUGATEsk
VUGATE VPHASE = 2.5V
--
2
--
A
LGATE Driver Source Resistance
RLGATEsr
100mA Source Current
--
1
--
LGATE Driver Source Current
ILGATEsr
VLGATE = 2.5V
--
2
--
A
LGATE Driver Sink Resistance
RLGATEsk
100mA Sink Current
--
0.5
--
LGATE Driver Sink Current
ILGATEsk
VLGATE = 2.5V
--
4
--
A
EN Input Voltage
V
Switching Time
Output
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution recommended. The human body mode is a 100pF capacitor is
charged through a 1.5kΩ resistor into each pin.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS9610C-01 April 2016
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RT9610C
Typical Application Circuit
L1
2.2µH
VIN
VBAT
C8
C9
C10
C12
C11
R2
BOOT
R1
VCC
VCC
C13
C14
C2
1µF
R3
Q1
UGATE
C1
1µF
L2
1µH
RT9610C
Enable
PHASE
EN
C3
3.3nF
R4
PWM
PWM
LGATE
GND
VCORE
Q2
C4
C5
C6
C7
R5
2.2
Timing Diagram
PWM
tPDLL
90%
tPDLU
LGATE
1.5V
1.5V
90%
UGATE
1.5V
tPDHU
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1.5V
tPDHL
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DS9610C-01 April 2016
®
RT9610C
Typical Operating Characteristics
Driver Enable
Driver Disable
UGATE
(20V/Div)
PHASE
(20V/Div)
UGATE
(20V/Div)
PHASE
(20V/Div)
LGATE
(5V/Div)
LGATE
(5V/Div)
EN
(5V/Div)
EN
(5V/Div)
VIN = 19V, No Load
VIN = 19V, No Load
Time (1μs/Div)
Time (1μs/Div)
PWM Rising Edge
PWM Falling Edge
VIN = 19V, No Load
UGATE
(20V/Div)
UGATE
(20V/Div)
PHASE
(20V/Div)
LGATE
(5V/Div)
PHASE
(20V/Div)
LGATE
(5V/Div)
PWM
(5V/Div)
PWM
(5V/Div)
VIN = 19V, No Load
Time (20ns/Div)
Time (20ns/Div)
Dead Time
Dead Time
UGATE
UGATE
PHASE
PHASE
UGATE - PHASE
(5V/Div)
(5V/Div)
LGATE
VIN = 19V, PWM Rising, No Load
Time (20ns/Div)
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DS9610C-01 April 2016
UGATE - PHASE
LGATE
VIN = 19V, PWM Falling, No Load
Time (20ns/Div)
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RT9610C
Dead Time
Dead Time
UGATE
UGATE
PHASE
PHASE
UGATE - PHASE
(5V/Div)
LGATE
VIN = 19V, PWM Rising, Full Load
Time (20ns/Div)
UGATE - PHASE
(5V/Div)
LGATE
VIN = 19V, PWM Falling, Full Load
Time (20ns/Div)
Short Pulse
UGATE
PHASE
UGATE - PHASE
(5V/Div)
LGATE
VIN = 19V, Start Up
Time (20ns/Div)
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is a registered trademark of Richtek Technology Corporation.
DS9610C-01 April 2016
RT9610C
Application Information
Supply Voltage and Power On Reset
The RT9610C is designed to drive both high side and low
side N-MOSFETs through an externally input PWM control
signal. Connect 5V to VCC to power on the RT9610C. A
minimum 1μF ceramic capacitor is recommended to
bypass the supply voltage. Place the bypassing capacitor
physically near the IC. The power on reset (POR) circuit
monitors the supply voltage at the VCC pin. If VCC
exceeds the POR rising threshold voltage, the controller
resets and prepares for operation. UGATE and LGATE
are held low before VCC is above the POR rising threshold.
Enable and Disable
The RT9610C includes an EN pin for sequence control.
When the EN pin rises above the VENH trip point, the
RT9610C begins a new initialization and follows the PWM
command to control the UGATE and LGATE. When the
EN pin falls below the VENL trip point, the RT9610C shuts
down and keeps UGATE and LGATE low.
below their threshold, the non-overlap protection circuit
ensures that UGATE is low before LGATE pulls high.
Also to prevent the overlap of the gate drives during LGATE
pull low and UGATE pull high, the non-overlap circuit
monitors the LGATE voltage. When LGATE go below 1.1V,
UGATE is allowed to go high.
Driving Power MOSFETs
The DC input impedance of the power MOSFET is
extremely high. The gate draws the current only for few
nano-amperes. Thus once the gate has been driven up to
“ON” level, the current could be negligible.
However, the capacitance at the gate to source terminal
should be considered. It requires relatively large currents
to drive the gate up and down rapidly. It is also required to
switch drain current on and off with the required speed.
The required gate drive currents are calculated as follows.
D1
Three State PWM Input
After initialization, the PWM signal takes over the control.
The rising PWM signal first forces the LGATE signal low
and then allows the UGATE signal to go high right after a
non-overlapping time to avoid shoot through current. In
contrast, the falling PWM signal first forces UGATE to go
low. When the UGATE or PHASE signal reach a
predetermined low level, LGATE signal is then allowed to
go high.
Non-overlap Control
To prevent the overlap of the gate drives during the UGATE
pull low and the LGATE pull high, the non-overlap circuit
monitors the voltages at the PHASE node and high side
gate drive (UGATE-PHASE). When the PWM input signal
goes low, UGATE begins to pull low (after propagation
delay). Before LGATE can pull high, the non-overlap
protection circuit ensures that the monitored (UGATEPHASE) voltages have gone below 1.1V or phase voltage
is below 2V. Once the monitored voltages fall below the
threshold, LGATE begins to turn high. By waiting for the
voltages of the PHASE pin and high side gate drive to fall
Copyright © 2016 Richtek Technology Corporation. All rights reserved.
DS9610C-01 April 2016
d1
L
s1
VIN
VOUT
Cgs1
Cgd1
Cgd2
Igs1
Igd1
Ig1
g1
d2
Ig2 Igd2
g2
D2
Igs2
Cgs2
s2
GND
Vg1
VPHASE +5V
t
Vg2
5V
t
Figure1. Equivalent Circuit and Associated Waveforms
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RT9610C
In Figure 1, the current Ig1 and Ig2 are required to move the
gate up to 5V. The operation consists of charging Cgd1,
Cgd2 , Cgs1 and Cgs2. Cgs1 and Cgs2 are the capacitors from
gate to source of the high side and the low side power
MOSFETs, respectively. In general data sheets, the Cgs1
and C gs2 are referred as “Ciss” which are the input
capacitors. Cgd1 and Cgd2 are the capacitors from gate to
drain of the high side and the low side power MOSFETs,
respectively and referred to the data sheets as “Crss” the
reverse transfer capacitance. For example, tr1 and tr2 are
the rising time of the high side and the low side power
MOSFETs respectively, the required current Igs1 and Igs2,
are shown as below :
dVg1 Cgs1 x 5
(1)
Igs1 Cgs1
dt
tr1
Igs2 Cgs1
dVg2
dt
Cgs1 x 5
(2)
tr2
Before driving the gate of the high side MOSFET up to
5V, the low side MOSFET has to be off; and the high side
MOSFET is turned off before the low side is turned on.
From Figure 1, the body diode “D2” had been turned on
before high side MOSFETs turned on.
dV
5
Igd1 Cgd1
Cgd1
(3)
dt
tr1
Before the low side MOSFET is turned on, the Cgd2 have
been charged to VIN. Thus, as Cgd2 reverses its polarity
and g2 is charged up to 5V, the required current is :
dV
Vi 5
Igd2 Cgd2
Cgd2
(4)
dt
tr2
It is helpful to calculate these currents in a typical case.
Assume a synchronous rectified buck converter, input
voltage VIN = 12V, Vg1 = Vg2 = 5V. The high side MOSFET
is PHB83N03LT whose Ciss = 1660pF, Crss = 380pF, and
tr = 14ns. The low side MOSFET is PHB95N03LT whose
Ciss = 2200pF, Crss = 500pF and tr = 30ns, from the
equation (1) and (2) we can obtain :
Igs1
Igs2
1660 x 10-12 x 5
14 x 10-9
2200 x 10-12 x 5
30 x 10
-9
0.593
(A)
(5)
0.367
(A)
(6)
from equation. (3) and (4)
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Igd1
Igd2
380 x 10-12 x 5
14 x 10-9
0.136 (A)
500 x 10-12 x 12+5
30 x 10-9
(7)
0.283 (A)
(8)
the total current required from the gate driving source can
be calculated as following equations :
Ig1 Igs1 Igd1 0.593 0.136 0.729 (A)
(9)
Ig2 Igs2 Igd2 0.367 0.283 0.65 (A)
(10)
By a similar calculation, we can also get the sink current
required from the turned off MOSFET.
Select the Bootstrap Capacitor
Figure 2 shows part of the bootstrap circuit of the
RT9610C. The VCB (the voltage difference between BOOT
and PHASE on RT9610C) provides a voltage to the gate
of the high side power MOSFET. This supply needs to be
ensured that the MOSFET can be driven. For this, the
capacitance C B has to be selected properly. It is
determined by following constraints.
VIN
BOOT
UGATE
PHASE
CB
+
VCB
-
VCC
LGATE
GND
Figure 2. Part of Bootstrap Circuit of RT9610C
In practice, a low value capacitor CB will lead to the over
charging that could damage the IC. Therefore, to minimize
the risk of overcharging and to reduce the ripple on VCB,
the bootstrap capacitor should not be smaller than 0.1μF,
and the larger the better. In general design, using 1μF can
provide better performance. At least one low ESR capacitor
should be used to provide good local de-coupling. It is
recommended to adopt a ceramic or tantalum capacitor.
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DS9610C-01 April 2016
RT9610C
Thermal Considerations
Layout Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
Figure 4 shows the schematic circuit of a synchronous
buck converter to implement the RT9610C.
L1
5V
+
VIN
12V
C1
C2
1
BOOT
PD(MAX) = (TJ(MAX) − TA) / θJA
8
For recommended operating condition specifications, the
maximum junction temperature is 125°C. The junction to
ambient thermal resistance, θJA, is layout dependent. For
WDFN-8L 2x2 packages, the thermal resistance, θJA, is
45.5°C/W on a standard JEDEC 51-7 four-layer thermal
test board. The maximum power dissipation at TA = 25°C
can be calculated by the following formula :
PD(MAX) = (125°C − 25°C) / (45.5°C/W) = 2.19W for
WDFN-8L 2x2 package
The maximum power dissipation depends on the operating
ambient temperature for fixed T J(MAX) and thermal
resistance, θJA. The derating curves in Figure 3 allow the
designer to see the effect of rising ambient temperature
on the maximum power dissipation.
7
VCORE
PHB83N03LT
+
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
VCC
RT9610C
CB
Q1
L2
UGATE
PWM
PHASE
EN
C3
Q2
R1
PHB95N03LT 4 LGATE
GND
5
C4
2
6
PWM
5V
3
Figure 4. Synchronous Buck Converter Circuit
When layout the PCB, it should be very careful. The power
circuit section is the most critical one. If not configured
properly, it will generate a large amount of EMI. The
junction of Q1, Q2, L2 should be very close.
Next, the trace from UGATE, and LGATE should also be
short to decrease the noise of the driver output signals.
PHASE signals from the junction of the power MOSFET,
carrying the large gate drive current pulses, should be as
heavy as the gate drive trace. The bypass capacitor C4
should be connected to GND directly. Furthermore, the
bootstrap capacitors (CB) should always be placed as close
to the pins of the IC as possible.
Maximum Power Dissipation (W)1
2.5
Four-Layer PCB
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
Ambient Temperature (°C)
Figure 3. Derating Curve of Maximum Power Dissipation
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RT9610C
Outline Dimension
D2
D
L
E
E2
1
e
SEE DETAIL A
b
2
1
2
1
A
A1
A3
DETAIL A
Pin #1 ID and Tie Bar Mark Options
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A3
0.175
0.250
0.007
0.010
b
0.200
0.300
0.008
0.012
D
1.950
2.050
0.077
0.081
D2
1.000
1.250
0.039
0.049
E
1.950
2.050
0.077
0.081
E2
0.400
0.650
0.016
0.026
e
L
0.500
0.300
0.020
0.400
0.012
0.016
W-Type 8L DFN 2x2 Package
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
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DS9610C-01 April 2016