R1111N281A-TR-FE

R1111N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-057-120206 OUTLINE The R1111N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs perform with low dropout voltage and a chip enable function. The line transient response and load transient response of the R1111N Series are excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment. The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5 (Mini-mold) package , high density mounting of the ICs on boards is possible. FEATURES • • • • • • • • • • • • Supply Current ............................................................Typ. 35μA Standby Mode .............................................................Typ. 0.1μA Dropout Voltage ..........................................................Typ. 0.2V (IOUT=100mA) Ripple Rejection..........................................................Typ. 70dB(f=1kHz) Output Voltage ............................................................1.5V to 5.0V (0.1V steps) (For other voltages, please refer to MARK INFORMATIONS.) Output Voltage Accuracy.............................................±2.0% Low Temperature-Drift Coefficient of Output Voltage..Typ. ±100ppm/°C Line Regulation ...........................................................Typ. 0.05%/V Package ....................................................................SOT-23-5 Built-in chip enable circuit ( 2 types; A: active “L”, B: active “H”) Built-in Fold Back Protection Circuit .......................... Typ. 50mA (Current at short mode) Pin-out.........................................................................Similar to the LP2980 APPLICATIONS • Power source for cellular phones such as GSM, CDMA and various kinds of PCSs. • Power source for electrical appliances such as cameras, VCRs and camcorders. • Power source for battery-powered equipment. 1 R1111N BLOCK DIAGRAM R1111Nxx1A R1111Nxx1B 1 5 1 VOUT VDD Vref VOUT Vref Current Limit CE 5 VDD GND 3 2 CE Current Limit GND 3 2 SELECTION GUIDE The output voltage, the active type for the ICs can be selected at the user's request. Product Name R1111Nxx1∗-TR-FE Package Quantity per Reel Pb Free Halogen Free SOT-23-5 3,000 pcs Yes Yes xx : The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps. (For other voltages, please refer to MARK INFORMATIONS.) ∗ : Designation of Active Type (A) "L" active (B) "H" active 2 R1111N PIN CONFIGURATION • SOT-23-5 5 4 (mark side) 1 2 3 PIN DESCRIPTION • SOT-23-5 Pin No Symbol Pin Description 1 VDD 2 GND 3 CE or CE Chip Enable Pin 4 NC No Connection 5 VOUT Output pin Input Pin Ground Pin ABSOLUTE MAXIMUM RATINGS Symbol Item Rating Unit 9.0 V VIN Input Voltage VCE Input Voltage( CE or CE Pin) -0.3 ~ VIN+0.3 V VOUT Output Voltage -0.3 ~ VIN+0.3 V IOUT Output Current 200 mA 420 mW PD Power Dissipation ∗ Topt Operating Temperature Range -40 ~ 85 °C Tstg Storage Temperature Range -55 ~ 125 °C ∗) For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. 3 R1111N ELECTRICAL CHARACTERISTICS R1111Nxx1A (Topt=25°C) Symbol Item VOUT Output Voltage IOUT Output Current Conditions VIN=VSET+1V, 1mA≤IOUT≤30mA Min. Typ. ×0.98 Max. Unit ×1.02 V Refer to ELECTRICAL CHARACTERISTICS BY OUTPUT VOLTAGE. ΔVOUT /ΔIOUT Load Regulation VDIF Dropout Voltage ISS Supply Current VIN=VSET+1V, IOUT=0A 35 70 μA Istandby Standby Current VIN=VCE, VIN=VSET+1V 0.1 1.0 μA ΔVOUT /ΔVIN Line Regulation VSET+0.5V≤VIN≤8.0V, IOUT=30mA 0.05 0.20 %/V RR Ripple Rejection f=1kHz, Ripple 0.5Vp-p, VIN=VSET+1V VIN Input Voltage ΔVOUT /ΔTopt 12 Short Current Limit RPU CE Pull-up VCEH CE Input Voltage “H” VCEL CE Input Voltage “L” 70 2.0 VOUT=0V 2.5 Resistance Output Noise 40 mV Refer to ELECTRICAL CHARACTERISTICS BY OUTPUT VOLTAGE. Output Voltage I =10mA, −40°C≤Topt≤85°C Temperature Coefficient OUT ISC en VIN=VSET+1V, 1mA≤IOUT≤80mA BW=10Hz to 100kHz RECOMMENDED OPERATING CONDITIONS dB 8.0 V ±100 Ppm /°C 50 mA 5.0 10.0 MΩ 1.5 VIN V 0 0.25 V 30 μVrms (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 4 R1111N R1111Nxx1B Symbol (Topt=25°C) Item VOUT Output Voltage IOUT Output Current ΔVOUT /ΔIOUT Load Regulation VDIF Dropout Voltage ISS Supply Current Istandby Standby Current Conditions VIN=VSET+1V, 1mA≤IOUT≤30mA ×0.98 VIN=VSET+1V, 1mA ≤IOUT≤80mA Unit ×1.02 V 12 40 mV VIN=VSET+1V, IOUT=0A 35 70 μA VIN=VSET+1V, VCE=GND 0.1 1.0 μA 0.05 0.20 %/V VSET+0.5V≤VIN≤8.0V, IOUT=30mA RR Ripple Rejection f=1KHz, Ripple 0.5Vp-p, VIN=VSET+1V VIN Input Voltage 70 2.0 Output Voltage Temperature Coefficient IOUT=10mA, −40°C≤Topt≤85°C ISC Short Current Limit VOUT=0V RPD CE Pull-up Resistance 2.5 VCEH CE Input Voltage “H” VCEL CE Input Voltage “L” Output Noise Max. Refer to ELECTRICAL CHARACTERISTICS BY OUTPUT VOLTAGE. Line Regulation en Typ. Refer to ELECTRICAL CHARACTERISTICS BY OUTPUT VOLTAGE. ΔVOUT /ΔVIN ΔVOUT /ΔTopt Min. BW=10Hz to 100kHz RECOMMENDED OPERATING CONDITIONS dB 8.0 V ±100 Ppm /°C 50 mA 5.0 10.0 MΩ 1.5 VIN V 0 0.25 V 30 μVrms (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 5 R1111N ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Topt = 25°C Output Current IOUT (mA) Condition Output Voltage VOUT (V) 1.5 ≤ VSET ≤ 1.7 1.8 ≤ VSET ≤ 5.0 Min. 100 150 VIN=VSET+1V Topt = 25°C Output Voltage VOUT (V) 1.5 1.6 1.7 1.8 ≤ VSET ≤ 1.9 2.0 ≤ VSET ≤ 2.4 2.5 ≤ VSET ≤ 2.7 2.8 ≤ VSET ≤ 3.3 3.4 ≤ VSET ≤ 5.0 Dropout Voltage VDIF (V) Condition Min. 0.5 0.4 0.3 IOUT = 100mA Typ. Max. 0.60 0.35 0.24 0.20 0.17 1.40 0.70 0.35 0.30 0.26 OPERATION R1111Nxx1A 1 R1111Nxx1B 5 1 VOUT VDD 5 VOUT VDD R1 R1 Vref CE 3 Vref Current Limit R2 GND 2 CE 3 Current Limit R2 GND 2 In these ICs, fluctuation of output voltage, VOUT is detected by feed-back registers R1, R2, and the result is compared with a reference voltage by the error amplifier, so that a constant voltage is output. A current limit circuit for protection at short mode and a chip enable circuit, are included. 6 R1111N TEST CIRCUITS CE CE 3 IN VDD 1 3 VOUT R1111Nxx1B Series OUT 5 IOUT IN VDD 1 VOUT R1111Nxx1B Series 5 ISS 2.2μF 2.2μF 2 0.1μF 2 GND GND 0.1μF Fig.1 Standard test Circuit Fig.2 Supply Current Test Circuit CE CE 3 IN VDD 1 OUT 3 VOUT R1111Nxx1B Series 5 OUT IN VDD 1 VOUT R1111Nxx1B Series OUT 5 IOUT P.G 2 2 GND Fig.3 Ripple Rejection, Line Transient Response Test Circuit 1μF GND I1 I2 Fig.4 Load Transient Response Test Circuit 7 R1111N TYPICAL CHARACTERISTICS 1) Output Voltage vs. Output Current R1111N181B R1111N301B Topt = 25°C Topt = 25°C 2.0 3.5 5.0V 3.0 3.8V 1.6 2.8V Output Voltage VOUT (V) Output Voltage VOUT (V) 1.8 1.4 1.2 2.3V 1.0 0.8 0.6 VIN = 2.1V 0.4 4.0V 2.5 2.0 3.5V 1.5 VIN = 3.3V 1.0 0.5 0.2 0.0 0.0 0 100 200 300 400 Output Current IOUT (mA) 500 0 100 R1111N401B 200 300 400 Output Current IOUT (mA) 500 R1111N501B Topt = 25°C Topt = 25°C 6.0 5.0 5.0 4.0 6.0V 3.5 Output Voltage (V) Output Voltage VOUT (V) 4.5 5.0V 3.0 2.5 4.5V 2.0 VIN = 4.3V 1.5 7.0V 4.0 6.0V 3.0 5.5V 2.0 VIN = 5.3V 1.0 1.0 0.5 0.0 0.0 0 100 200 300 400 Output Current IOUT (mA) 0 500 100 200 300 400 Output Current IOUT (mA) 500 2) Output Voltage vs. Input Voltage R1111N181B R1111N301B Topt = 25°C Topt = 25°C 3.1 2.0 IOUT=1mA 3.0 IOUT = 1mA Output Voltage VOUT (V) Output Voltage VOUT (V) 1.9 1.8 1.7 1.6 1.5 1.4 30mA 2.9 2.8 2.7 30mA 2.6 1.3 50mA 1.2 1.0 8 2.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 2.5 2.0 50mA 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 R1111N R1111N401B R1111N501B Topt = 25°C Topt = 25°C 4.5 5.5 5.0 Output Voltage VOUT (V) Output Voltage VOUT (V) IOUT = 1mA 4.0 3.5 30mA 3.0 3.0 4.0 3.5 30mA 3.0 50mA 2.5 2.0 IOUT = 1mA 4.5 50mA 4.0 5.0 6.0 Intput Voltage VIN (V) 7.0 2.5 2.0 8.0 3.0 4.0 5.0 6.0 Intput Voltage VIN (V) 7.0 8.0 3) Dropout Voltage vs. Output Current R1111N181B R1111N301B 1.20 0.40 0.35 Topt = 85°C 0.80 0.60 25°C 0.40 -40°C Dropout Voltage VDIF (V) Dropout Voltage VDIF (V) 1.00 0.20 Topt = 85°C 0.30 25°C 0.25 0.20 -40°C 0.15 0.10 0.05 0.00 0.00 0 50 100 Output Current IOUT (mA) 150 0 0.40 0.35 0.35 0.30 Topt = 85°C 0.25 25°C 0.20 0.15 -40°C 0.10 150 R1111N501B 0.40 0.05 Dropout Voltage VDIF (V) Dropout Voltage VDIF (V) R1111N401B 50 100 Output Current IOUT (mA) 0.30 Topt = 85°C 0.25 25°C 0.20 0.15 -40°C 0.10 0.05 0.00 0.00 0 50 100 Output Current IOUT (mA) 150 0 50 100 Output Current IOUT (mA) 150 9 R1111N 4) Output Voltage vs. Temperature R1111N181B 1.90 1.88 3.08 1.86 3.06 1.84 1.82 1.80 1.78 1.76 1.74 3.04 3.02 3.00 2.98 2.96 2.94 2.92 1.72 1.70 -50 VIN = 4.0V IOUT = 30mA 3.10 Output Voltage VOUT (V) Output Voltage VOUT (V) R1111N301B VIN = 2.8V IOUT = 30mA -25 0 25 50 Temperature Topt (°C) 75 2.90 -50 100 -25 R1111N401B 100 VIN = 6.0V IOUT = 30mA 5.10 4.08 5.08 4.06 5.06 Output Voltage VOUT (V) Output Voltage VOUT (V) 75 R1111N501B VIN = 5.0V IOUT = 30mA 4.10 4.04 4.02 4.00 3.98 3.96 3.94 5.04 5.02 5.00 4.98 4.96 4.94 4.92 3.92 3.90 -50 0 25 50 Temperature Topt (°C) -25 0 25 50 Temperature Topt (°C) 75 4.90 -50 100 -25 0 25 50 Temperature Topt (°C) 75 100 5) Supply Current vs. Input Voltage R1111N181B R1111N301B Topt = 25°C 60 60 50 50 Supply Current I ISS (μA) Supply Current I ISS (μA) Topt = 25°C 40 30 20 10 30 20 10 10 0 1.0 40 2.0 4.0 5.0 6.0 3.0 Input Voltage VIN (V) 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 R1111N R1111N401B R1111N501B Topt = 25°C 60 60 50 50 Supply Current ISS (μA) Supply Current ISS (μA) Topt = 25°C 40 30 20 10 0 1.0 40 30 20 10 2.0 4.0 5.0 6.0 3.0 Intput Voltage VIN (V) 7.0 0 1.0 8.0 2.0 3.0 4.0 5.0 6.0 Intput Voltage VIN (V) 7.0 8.0 6) Supply Current vs. Temperature R1111N181B R1111N301B VIN = 2.8V 50 50 45 45 Supply Current ISS (μA) Supply Current ISS (μA) VIN = 2.8V 40 35 30 25 20 -50 40 35 30 25 0 50 Temperature Topt (°C) 20 -50 100 R1111N401B VIN = 6.0V 50 50 45 45 Supply Current ISS (μA) Supply Current ISS (μA) 100 R1111N501B VIN = 5.0V 40 35 30 25 20 -50 0 50 Temperature Topt (°C) 40 35 30 25 0 50 Temperature Topt (°C) 100 20 -50 0 50 Temperature Topt (°C) 100 11 R1111N 7) Dropout Voltage vs. Set Output Voltage R1111Nxx1B Topt = 25 1.0 Dropout Voltage VDIF (V) 0.9 IOUT IOUT IOUT IOUT IOUT 0.8 0.7 0.6 = = = = = 150mA 100mA 50mA 30mA 10mA 0.5 0.4 0.3 0.2 0.1 0.0 1.0 2.0 3.0 4.0 Set Output Voltage Vreg (V) 5.0 8) Ripple Rejection vs. Frequency R1111N181B R1111N181B VIN = 2.8VDC + 0.5Vp-p COUT = tantal 2.2μF 80 80 70 70 Ripple Rejection RR (dB) Ripple Rejection RR (dB) VIN = 2.8VDC + 0.5Vp-p COUT = tantal 1.0μF 60 50 40 IOUT = 1mA 30 IOUT = 30mA 20 IOUT = 50mA 10 60 50 40 IOUT= 1mA 30 IOUT = 30mA 20 IOUT = 50mA 10 0 0 0.1 1 10 Frequuency f (kHz) 0.1 100 1 R1111N301B VIN = 4VDC + 0.5Vp-p COUT = tantal 2.2μF 80 70 70 Ripple Rejection RR (dB) Ripple Rejection RR (dB) 80 60 50 IOUT = 1mA 30 IOUT = 30mA 20 IOUT = 50mA 10 60 50 40 IOUT = 1mA 30 IOUT = 30mA 20 IOUT = 50mA 10 0 0 0.1 12 100 R1111N301B VIN = 4VDC + 0.5Vp-p COUT = tantal 1.0μF 40 10 Frequuency f (kHz) 1 10 Frequuency f (kHz) 100 0.1 1 10 Frequuency f (kHz) 100 R1111N R1111N401B R1111N401B VIN = 5.0VDC + 0.5Vp-p COUT = tantal 2.2μF 80 80 70 70 Ripple Rejection RR (dB) Ripple Rejection RR (dB) VIN = 5.0VDC + 0.5Vp-p COUT = tantal 1.0μF 60 50 IOUT= 1mA 40 30 IOUT = 30mA 20 IOUT = 50mA 10 60 50 40 IOUT = 1mA 30 IOUT = 30mA 20 IOUT = 50mA 10 0 0 0.1 1 10 Frequeney f (kHz) 0.1 100 1 10 100 Frequeney f (kHz) 9) Ripple Rejection vs. Input Voltage (DC bias) R1111N301B R1111N301B IOUT = 10mA COUT = 2.2μF 80 80 70 70 Ripple Rejection RR(dB) Ripple Rejection RR (dB) IOUT = 1mA COUT = 2.2μF 60 50 40 f = 400Hz 30 20 f = 1kHz 10 f = 10kHz 60 50 40 f = 400Hz 30 20 f = 1kHz 10 f = 10kHz 0 0 3.1 3.2 3.3 3.4 Input Voltage VIN (V) 3.5 3.1 3.2 3.3 3.4 Input Voltage VIN (V) 3.5 R1111N301B IOUT = 50mA COUT = 2.2μF 80 f = 400Hz Ripple Rejection RR(dB) 70 f = 1kHz 60 50 f = 10kHz 40 30 20 10 0 3.1 3.2 3.3 3.4 3.5 Input Voltage VIN (V) 13 R1111N 10) Input Transient Response R1111N301B IOUT=30mA tr=tf=5 μs COUT=Tantalum 1.0μF Output Voltage VOUT (V) 3.3 5 Input Voltage 3.2 4 3.1 3 Output Voltage 3.0 2 2.9 1 Input Voltage VIN (V) 6 3.4 0 2.8 0 20 40 60 Time t (μs) 80 100 120 R1111N301B IOUT=30mA tr=tf=5 μs COUT=Tantalum 2.2μF Output Voltage VOUT (V) 3.3 5 Input Voltage 4 3.2 3 3.1 Output Voltage 3.0 2 2.9 1 Input Voltage VIN (V) 6 3.4 0 2.8 0 20 40 60 Time t (μs) 80 100 120 R1111N301B IOUT=30mA tr=tf=5 μs COUT=Tantalum 4.7μF Output Voltage VOUT (V) 3.3 5 Input Voltage 4 3.2 3 3.1 Output Voltage 3.0 2 1 2.9 0 2.8 0 14 20 40 60 Time t (μs) 80 100 120 Input Voltage VIN (V) 6 3.4 R1111N 11) Load Transient Response R1111N301B VIN=4V CIN=Tantalum 1μF COUT=Tantalum 1.0μF Output Voltage VOUT (V) 3.3 100 Output Current 50 3.2 0 3.1 Output Voltage 3.0 -50 2.9 -100 Output Current IOUT (mA) 150 3.4 -150 2.8 0 2 4 6 8 10 12 Time t (μs) 14 16 18 20 R1111N301B VIN=4V CIN=Tantalum 1μF COUT=Tantalum 2.2μF Output Voltage VOUT (V) 3.3 100 Output Current 50 3.2 0 3.1 Output Voltage 3.0 -50 2.9 -100 Output Current IOUT (mA) 150 3.4 -150 2.8 0 2 4 6 8 10 12 Time t (μs) 14 16 18 20 R1111N301B VIN=4V CIN=Tantalum 1μF COUT=Tantalum 4.7μF Output Voltage VOUT (V) 3.3 100 Output Current 50 3.2 3.1 0 Output Voltage 3.0 -50 2.9 -100 Output Current IOUT (mA) 150 3.4 -150 2.8 0 2 4 6 8 10 12 Time t (μs) 14 16 18 20 15 R1111N TECHNICAL NOTES When using these ICs, consider the following points: In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance) of which is in the range described as follows: 3 CE VOUT 5 R1111N301B 1 VIN VIN 2 GND Ceramic Capacitor S.A. ESR Spectrum Analyzer IOUT Ceramic Capacitor 1μF Measuring Circuit for white noise; R1111N301B The relationship between IOUT (output current) and ESR of output capacitor is shown in the graphs below. The conditions when the white noise level is under 40mV (Avg.) are indicated by the hatched area in the graph. (note: When the additional ceramic capacitors are connected to the output pin with output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as the same external components as the ones to be used on the PCB.) (1) VIN=4V (2) Frequency Band: 10Hz to 1MHz (3) Temperature: 25°C R1111N301B R1111N301B Ceramic 1.0μF Ceramic 2.2μF 100.0 10.0 10.0 ESR (Ω) ESR (Ω) 100.0 1.0 1.0 0.1 0 50 100 Output Current IOUT (mA) 16 150 0.1 0 50 100 Output Current IOUT (mA) 150 R1111N ·Make VDD and GND lines sufficient. If their impedance is high, noise pick up or incorrect operation may result. ·Connect the capacitor with a capacitance of 1μF or more between VDD and GND as close as possible. ·Set external components, especially the output capacitor, as close as possible to the ICs and make wiring as short as possible. TYPICAL APPLICATION CE CE IN Cap. VDD R1111Nxx1A VOUT GND OUT Cap. IN Cap. VDD R1111Nxx1B VOUT GND OUT Cap. 17 1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. 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