R1113Z501A-TR

LOW NOISE 150mA LDO REGULATOR R1113Z SERIES OUTLINE NO. EA-101-0504 The R1113Z Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high ripple rejection. Each of these ICs consists of a voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs perform with low dropout voltage and a chip enable function. The line transient response and load transient response of the R1113Z Series are excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment. The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is WL-CSP4-P1 (Wafer Level CSP), high density mounting of the ICs on boards is possible. FEATURES Ultra-Low Supply Current................................................ Typ. 100µA Standby Mode ................................................................. Typ. 0.1µA Low Dropout Voltage....................................................... Typ. 0.23V (IOUT=100mA 3.0V Output type) High Ripple Rejection ..................................................... Typ. 80dB(f=1kHz 3.0V Output type) Low Temperature-Drift Coefficient of Output Voltage...... Typ. ±100ppm/°C Excellent Line Regulation ............................................... Typ. 0.05%/V High Output Voltage Accuracy ........................................ ±2.0% Excellent Dynamic Response Small Package .............................................................. WL-CSP4-P1 (Wafer Level CSP) Output Voltage .................................................. ............. Stepwise setting with a step of 0.1V in the range of 1.5V to5.0V is possible • Built-in Chip Enable Circuit (2 types; A: active low, B: active high) • Built-in Fold Back Protection Circuit ............................... Typ. 30mA (Current at short mode) • Ceramic capacitors are recommended to be used with this IC • • • • • • • • • • APPLICATIONS • Power source for cellular phones such as GSM, CDMA and various kinds of PCS. • Power source for electrical appliances such as cameras, VCRs and camcorders. • Power source for battery-powered equipment. 1 R1113Z BLOCK DIAGRAM R1113Zxx1A VDD 3 + Vref Current Limit CE 4 R1113Zxx1B 2 VOUT VDD 3 + Vref Current Limit 2 VOUT 1 GND CE 4 1 GND SELECTION GUIDE The output voltage, the active type, the packing type, and the taping type for the ICs can be selected at the user's request. The selection can be made with designating the part number as shown below; R1113xxx1x-xx ↑↑ ab ↑↑ cd ←Part Number Code a b c d Contents Designation of Package Type : Z:WL-CSP4-P1 (Wafer Level CSP) Setting Output Voltage (VOUT) : Stepwise setting with a step of 0.1V in the range of 1.5V to 5.0V is possible. Designation of Active Type : A : active low type B : active high type Designation of Taping Type : Ex. TR, TL (refer to Taping Specifications; TR type is the standard direction.) 2 R1113Z PIN CONFIGURATION WL-CSP4-P1 3 VDD 4 CE 4 3 2 VOUT 1 GND 1 Top View 2 Bottom View PIN DESCRIPTION Pin No 1 2 3 4 Symbol GND VOUT VDD CE or CE Description Ground Pin Output pin Input Pin Chip Enable Pin ABSOLUTE MAXIMUM RATINGS Symbol VIN VCE VOUT IOUT PD Topt Tstg Input Voltage Input Voltage( CE or CE Pin) Output Voltage Output Current Power Dissipation Operating Temperature Range Storage Temperature Range Item Rating 7.0 -0.3 ~ VIN+0.3 -0.3 ~ VIN+0.3 200 190 -40 ~ 85 -55 ~ 125 Unit V V V mA mW °C °C 3 R1113Z Power Dissipation Typical Characteristics ∗Measurement Conditions Mounted on board (Wind velocity=0m/s) Board Material: FR-4 (Double-layer) Board Size: 40mm×40mm×t1.6mm Wiring area ratio against the board: 50% ∗Result Power dissipation 465mW Thermal Resistance 215°C/W 700 600 Power Dissipation(mW) 500 400 300 WL-CSP-4 200 100 0 0 25 50 75 100 125 Temperature Topt(°C) 4 R1113Z ELECTRICAL CHARACTERISTICS • R1113Zxx1A Symbol VOUT IOUT ∆VOUT/∆IOUT VDIF ISS Istandby ∆VOUT/∆VIN RR VIN ∆VOUT/∆T ILIM RPU VCEH VCEL en Topt=25°C Item Output Voltage Output Current Load Regulation Dropout Voltage Supply Current Supply Current (Standby) Line Regulation Ripple Rejection Input Voltage Output Voltage Temperature Coefficient Short Current Limit CE Pull-up Resistance CE Input Voltage “H” CE Input Voltage “L” Conditions VIN = Set VOUT+1V VIN − VOUT = 1.0V VIN = Set VOUT+1V 1mA < IOUT < 80mA = = 1mA < IOUT < 30mA = = Min. VOUT×0.98 150 Typ. Max. VOUT×1.02 Unit V mA 20 45 mV Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT+1V VIN = VCE = Set VOUT+1V Set VOUT+0.5V < VIN < 6V = = IOUT = 30mA 100 0.1 0.05 170 1.0 0.20 µA µA %/V Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE 2.0 IOUT = 30mA VOUT = 0V 2.5 1.5 0.00 BW=10Hz to 100kHz 30 −40°C < Topt < 85°C = = ±100 30 5.0 10.0 VIN 0.25 6.0 V ppm/°C mA MΩ V V µVrms Output Noise • R1113Zxx1B Symbol VOUT IOUT ∆VOUT/∆IOUT VDIF ISS Istandby ∆VOUT/∆VIN RR VIN ∆VOUT/∆T ILIM RPU VCEH VCEL en Topt=25°C Item Output Voltage Output Current Load Regulation Dropout Voltage Supply Current Supply Current (Standby) Line Regulation Ripple Rejection Input Voltage Output Voltage Temperature Coefficient Short Current Limit CE Pull-up Resistance CE Input Voltage “H” CE Input Voltage “L” Output Noise IOUT = 30mA VOUT = 0V Conditions VIN = Set VOUT+1V VIN − VOUT = 1.0V VIN = Set VOUT+1V 1mA < IOUT < 80mA = = 1mA < IOUT < 30mA = = Min. VOUT×0.98 150 Typ. Max. VOUT×1.02 Unit V mA 20 45 mV Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT+1V VIN = VCE = Set VOUT+1V Set VOUT+0.5V < VIN < 6V = = IOUT = 30mA 100 0.1 0.05 170 1.0 0.20 µA µA %/V Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE 2.0 −40°C < Topt < 85°C = = ±100 30 2.5 1.5 0.00 BW=10Hz to 100kHz 30 5.0 10.0 VIN 0.25 6.0 V ppm/°C mA MΩ V V µVrms 5 R1113Z ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Topt = 25°C Output Voltage VOUT (V) 1.5 1.6 1.7 1.8 1.9 VOUT VOUT VOUT 2.0 2.4 2.8 < = < = < = < = < = < = 2.3 2.7 5.0 Dropout Voltage VDIF (V) Condition Typ. 0.50 0.45 0.40 0.34 IOUT = 100mA 0.28 0.25 0.24 0.23 Max. 0.70 0.65 0.60 0.55 0.44 0.35 0.29 0.26 Topt = 25°C Output Voltage VOUT (V) 1.5 4.1 < = < = VOUT VOUT < = < = 4.0 5.0 Ripple Rejection RR (dB) Condition Typ. 80 f = 1kHz, Ripple 0.5Vp-p VIN = Set VOUT + 1V 70 Max. OPERATION R1113Zxx1A VDD 3 + Vref Current Limit CE 4 R2 R1 R1113Zxx1B 2 VOUT VDD 3 + Vref Current Limit R2 R1 2 VOUT 1 GND CE 4 1 GND In these ICs, fluctuation of output voltage, VOUT is detected by feedback registers R1, R2, and the result is compared with a reference voltage by the error amplifier, so that a constant voltage is output. A current limit circuit for protection in short mode and a chip enable circuit, are included. 6 R1113Z TECHNICAL NOTES When using these ICs, consider the following points: Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance). We use Ceramic Capacitors for evaluation of these ICs. Recommended Capacitors ; GRM40X5R225K6.3 (Murata) GRM40-034X5R335K6.3 (Murata) GRM40-034X5R475K6.3 (Murata) (Note: When the additional ceramic capacitors are connected to the output pin with an output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) PCB Layout Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result. Connect a capacitor with a capacitance value as much as 2.2µF or more between VDD and GND pin, and as close as possible to the pins. Set external components, especially the output capacitor, as close as possible to the ICs, and make wiring as short as possible. 7 R1113Z TEST CIRCUITS CE 4 VDD 3 R1113Zxx1B Series 2 VOUT VDD 3 R1113Zxx1B Series 2 4 VOUT CE IN OUT IOUT 2.2µF IN ISS OUT 2.2µF 1 GND 2.2µF 1 GND 2.2µF Fig.1 Standard test Circuit Fig.2 Supply Current Test Circuit CE 4 VDD 3 R1113Zxx1B Series 2 VOUT VDD 3 4 CE IN OUT IOUT 2.2µF IN VOUT R1113Zxx1B Series 2 2.2µF OUT P.G 1 GND 2.2µF 1 GND I1 I2 Fig.3 Ripple Rejection, Line Transient Response Test Circuit Fig.4 Load Transient Response Test Circuit TYPICAL APPLICATION CE VDD R1113Zxx1A VOUT Series + Cap. GND + Cap. CE IN OUT IN + Cap. VDD R1113Zxx1B VOUT Series + GND OUT Cap. (External Components) Output Capacitor ; Ceramic 2.2µF (Set Output Voltage in the range from 2.6 to 5.0V) Ceramic 4.7µF (Set Output Voltage in the range from 1.5 to 2.5V) Input Capacitor ; Ceramic 2.2µF 8 R1113Z TYPICAL CHARACTERISTICS 1) Output Voltage vs. Output Current R1113Z201B 2.5 3.5 Topt=25°C R1113Z301B Output Voltage VOUT(V) 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 500 VIN=3.3V VIN=3.5V VIN=4.0V VIN=5.0V Output Voltage VOUT(V) 2 1.5 1 0.5 0 0 100 200 300 400 500 VIN=2.3V VIN=2.5V VIN=3.0V VIN=4.0V Output Current IOUT(mA) Output Current IOUT(mA) R1113Z401B 5 6 R1113Z501B Output Voltage VOUT(V) Output Voltage VOUT(V) 4 3 2 1 0 0 100 200 300 400 500 VIN=4.3V VIN=4.5V VIN=5.0V VIN=6.0V 5 4 3 2 1 0 0 100 200 300 400 500 VIN=5.3V VIN=5.5V VIN=6.0V VIN=7.0V Output Current IOUT(mA) Output Current IOUT(mA) 2) Output Voltage vs. Input Voltage R1113Z201B 2.2 Topt=25°C R1113Z301B 3.2 Output Voltage VOUT(V) 2 1.8 1.6 1.4 1.2 1 1 2 3 4 5 6 7 IOUT=1mA IOUT=30mA IOUT=50mA Output Voltage VOUT(V) 3 2.8 2.6 2.4 2.2 2 1 2 3 4 5 6 7 IOUT=1mA IOUT=30mA IOUT=50mA Input Voltage VIN(V) Input Voltage VIN(V) 9 R1113Z R1113Z401B 4.2 5.2 R1113Z501B Output Voltage VOUT(V) Output Voltage VOUT(V) 4 3.8 3.6 3.4 3.2 3 1 2 3 4 5 6 7 IOUT=1mA IOUT=30mA IOUT=50mA 5 4.8 4.6 4.4 4.2 4 1 2 3 4 5 6 7 IOUT=1mA IOUT=30mA IOUT=50mA Input Voltage VIN(V) Input Voltage VIN(V) 3) Dropout Voltage vs. Output Current R1113Z201B 0.6 0.6 R1113Z301B Dropout Voltage VDIF(V) Dropout Voltage VDIF(V) 0.5 0.4 0.3 0.2 0.1 0.0 0 50 100 150 Topt=-40˚C Topt=25˚C Topt=85˚C 0.5 0.4 0.3 0.2 0.1 0.0 0 50 100 150 Topt=-40˚C Topt=25˚C Topt=85˚C Output Current IOUT(mA) Output Current IOUT(mA) R1113Z401B 0.6 0.6 R1113Z501B Dropout Voltage VDIF(V) Dropout Voltage VDIF(V) 0.5 0.4 0.3 0.2 0.1 0.0 0 50 100 150 Topt=-40˚C Topt=25˚C Topt=85˚C 0.5 0.4 0.3 0.2 0.1 0.0 0 50 100 150 Topt=-40˚C Topt=25˚C Topt=85˚C Output Current IOUT(mA) Output Current IOUT(mA) 10 R1113Z 4) Output Voltage vs. Temperature R1113Z201B VIN=3.0V, IOUT=30mA 2.04 3.06 R1113Z301B VIN=4.0V, IOUT=30mA Output Voltage VOUT(V) Output Voltage VOUT(V) -25 0 25 50 75 100 2.03 2.02 2.01 2.00 1.99 1.98 1.97 1.96 -50 3.04 3.02 3.00 2.98 2.96 2.94 -50 -25 0 25 50 75 100 Temperature Topt(˚C) Temperature Topt(˚C) R1113Z401B VIN=5.0V, IOUT=30mA 4.08 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 -50 R1113Z501B VIN=6.0V, IOUT=30mA Output Voltage VOUT(V) 4.04 4.02 4.00 3.98 3.96 3.94 3.92 -50 -25 0 25 50 75 100 Output Voltage VOUT(V) 4.06 -25 0 25 50 75 100 Temperature Topt(˚C) Temperature Topt(˚C) 5) Supply Current vs. Input Voltage R1113Z201B 100 Topt=25°C R1113Z301B 100 Supply Current ISS(µA) 80 60 40 20 0 1 2 3 4 5 6 7 Supply Current ISS(µA) 80 60 40 20 0 1 2 3 4 5 6 7 Input Voltage VIN(V) Input Voltage VIN(V) 11 R1113Z R1113Z401B 100 100 R1113Z501B Supply Current ISS(µA) 80 60 40 20 0 1 2 3 4 5 6 7 Supply Current ISS(µA) 80 60 40 20 0 1 2 3 4 5 6 7 Input Voltage VIN(V) Input Voltage VIN(V) 6) Supply Current vs. Temperature R1113Z201B VIN=3.0V 200 200 R1113Z301B VIN=4.0V Supply Current ISS(µA) 150 Supply Current ISS(µA) -25 0 25 50 75 100 150 100 100 50 50 0 -50 0 -50 -25 0 25 50 75 100 Temperature Topt(˚C) Temperature Topt(˚C) R1113Z401B VIN=5.0V 200 200 R1113Z501B VIN=6.0V Supply Current ISS(µA) 150 Supply Current ISS(µA) -25 0 25 50 75 100 150 100 100 50 50 0 -50 0 -50 -25 0 25 50 75 100 Temperature Topt(˚C) Temperature Topt(˚C) 12 R1113Z 7) Dropout Voltage vs. Set Output Voltage R1113Zxx1B 0.5 Dropout Voltage VDIF(V) 0.4 0.3 0.2 0.1 0.0 0.0 25mA 50mA 100mA 150mA 1.0 2.0 3.0 4.0 5.0 Set Output Voltage VREG(V) 8) Ripple Rejection vs. Frequency R1113Z201B VIN=3.0V+0.5Vp-p, COUT=ceramic 4.7µF 120 90 R1113Z301B VIN=4.0V+0.5Vp-p, COUT=ceramic 2.2µF Ripple Rejection RR(dB) 100 80 60 40 20 0 0.1 IOUT=1mA IOUT=30mA IOUT=50mA Ripple Rejection RR(dB) 80 70 60 50 40 30 20 10 0 0.1 1 10 100 IOUT=1mA IOUT=30mA IOUT=50mA 1 10 100 Frequency f(kHz) Frequency f(kHz) R1113Z401B VIN=5.0V+0.5Vp-p, COUT=ceramic 2.2µF 90 70 R1113Z501B VIN=6.0V+0.5Vp-p, COUT=ceramic 2.2µF Ripple Rejection RR(dB) Ripple Rejection RR(dB) 80 70 60 50 40 30 20 10 0 0.1 1 10 100 IOUT=1mA IOUT=30mA IOUT=50mA 60 50 40 30 20 10 0 0.1 IOUT=1mA IOUT=30mA IOUT=50mA 1 10 100 Frequency f(kHz) Frequency f(kHz) 13 R1113Z 9) Ripple Rejection vs. Input Voltage (DC bias) R1113Z301B IOUT=1mA, COUT=ceramic 2.2µF 90 80 R1113Z301B IOUT=30mA, COUT=ceramic 2.2µF Ripple Rejection RR(dB) 70 60 50 40 30 20 10 0 3.1 3.2 3.3 3.4 3.5 f=400Hz f=1kHz f=10kHz Ripple Rejection RR(dB) 80 70 60 50 40 30 20 10 0 3.1 3.2 3.3 3.4 3.5 f=400Hz f=1kHz f=10kHz Input Voltage VIN(V) Input Voltage VIN(V) R1113Z301B IOUT=50mA, COUT=ceramic 2.2µF 80 Ripple Rejection RR(dB) 70 60 50 40 30 20 10 0 3.1 3.2 3.3 3.4 3.5 f=400Hz f=1kHz f=10kHz Input Voltage VIN(V) 10) Input Transient Response R1113Z201B Topt=25°C VIN=3.0V↔4.0V IOUT=30mA CIN =none COUT=4.7µF tr/tf=5µs VIN VOUT 14 R1113Z R1113Z301B Topt=25°C VIN=4.0V↔5.0V IOUT=30mA CIN=none COUT=2.2µF tr/tf=5µs VIN VOUT R1113Z401B Topt=25°C VIN=5.0V↔6.0V IOUT=30mA CIN=none COUT=2.2µF tr/tf=5µs VIN VOUT R1113Z501B Topt=25°C VIN=6.0V↔7.0V IOUT=30mA CIN=none COUT=2.2µF tr/tf=5µs VIN VOUT 15 R1113Z 11) Load Transient Response R1113Z201B Topt=25°C IOUT=50mA↔100mA VIN=3.0V CIN=2.2µF COUT=4.7µF tr/tf=5µs IOUT VOUT R1113Z301B Topt=25°C IOUT=50mA↔100mA VIN=4.0V CIN=2.2µF COUT=2.2µF tr/tf=5µs IOUT VOUT R1113Z401B Topt=25°C IOUT=50mA↔100mA VIN=5.0V CIN=2.2µF COUT=2.2µF tr/tf=5µs IOUT VOUT 16 R1113Z R1113Z501B Topt=25°C IOUT=50mA↔100mA VIN=6.0V CIN=2.2µF COUT=2.2µF tr/tf=5µs IOUT VOUT TECHNICAL NOTES When using these ICs, consider the following points: In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance) of which is in the range described as follows: 4 CE VOUT 2 R1113Zxx1B 3 Ceramic Cap. VIN GND 1 Ceramic Cap. Spectrum Analyzer S.A. ESR IOUT VIN Measuring Circuit for white noise; R1113Zxx1B 17 R1113Z The relations between IOUT (Output Current) and ESR of an output capacitor are shown below. The conditions when the white noise level is under 40µV (Avg.) are marked as the hatched area in the graph. (Note: If additional ceramic capacitors are connected to the Output Pin with Output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) (1) VIN=VOUT+1V (2) Frequency Band: 10Hz to 1MHz (3) Temperature: 25°C R1113Z201B 100 COUT=2.2µF, CIN=2.2µF 100 R1113Z201B COUT=4.7µF, CIN=2.2µF 10 10 ESR (Ω) 0.1 ESR (Ω) 0 30 60 90 120 150 1 1 0.1 0.01 0.01 0.001 0.001 0 30 60 90 120 150 IOUT(mA) IOUT(mA) R1113Z301B COUT=2.2µF, CIN=2.2µF 100 100 R1113Z301B COUT=4.7µF, CIN=2.2µF 10 10 ESR (Ω) 0.1 ESR (Ω) 0 30 60 90 120 150 1 1 0.1 0.01 0.01 0.001 0.001 0 30 60 90 120 150 IOUT(mA) IOUT(mA) 18