R1116x SERIES
LOW NOISE 150mA LDO REGULATOR
NO. EA-126-111026
OUTLINE
The R1116x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply
current, low on Resistance, and high ripple rejection. Each of these ICs consists of a voltage reference unit, an
error amplifier, resistor-net for voltage setting, a short current limit circuit, a chip enable circuit, and so on.
These ICs perform with low dropout voltage and the chip-enable function. The supply current at no load of this
IC is only 10μA, and the line transient response and the load transient response of the R1116x Series are
excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment.
The supply current at no load of R1116x Series is remarkably reduced compared with R1114x Series. The
mode change signal to reduce the supply current is not necessary. The output voltage accuracy is also improved.
(±1.5%)
The output voltage of these ICs is fixed with high accuracy. Since the packages for these ICs are SOT-23-5
and SON1612-6 therefore high density mounting of the ICs on boards is possible.
R1126N Series that a pin configuration differs from R1116N Series are available.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
Supply Current ..................................................................... Typ. 10μA
Standby Current ................................................................... Typ. 0.1μA
Input Voltage Range ............................................................ 1.8V to 6.0V
Output Voltage Range.......................................................... 1.5V to 4.0V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
Dropout Voltage ................................................................... Typ. 0.29V (IOUT=150mA,VOUT=2.8V)
Ripple Rejection................................................................... Typ. 70dB (f=1kHz, VOUT=3.0V)
Typ. 53dB (f=10kHz)
Output Voltage Accuracy...................................................... ±1.5% (1.5V <
= VOUT <
= 3.0V), ±2.0% (VOUT>3.0V)
Temperature-Drift Coefficient of Output Voltage .................. Typ. ±100ppm/°C
Line Regulation .................................................................... Typ. 0.02%/V
Packages ............................................................................ SOT-23-5 , SON1612-6
Built-in Fold Back Protection Circuit .................................... Typ. 40mA (Current at short mode)
Ceramic capacitors are recommended to be used with this IC ... CIN=COUT=1.0μF (Ceramic)
APPLICATIONS
•
•
•
•
Power source for portable communication equipment.
Power source for portable music player.
Power source for electrical appliances such as cameras, VCRs and camcorders.
Power source for battery-powered equipment.
1
R1116x
BLOCK DIAGRAMS
R1116xxx1B
R1116xxx1D
VDD
VOUT
VDD
Vref
VOUT
Vref
Current Limit
Current Limit
CE
GND
CE
GND
SELECTION GUIDE
The output voltage, auto discharge function, package, and the taping type, etc. for the ICs can be selected at
the user’s request.
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
R1116Dxx1∗-TR-FE
SON1612-6
4,000 pcs
Yes
Yes
R1116Nxx1∗-TR-FE
SOT-23-5
3,000 pcs
Yes
Yes
xx : The output voltage can be designated in the range from 1.5V(15) to 4.0V(40) in 0.1V steps.
(For other voltages, please refer to MARK INFORMATIONS.)
∗ : CE pin polarity and auto discharge function at off state are options as follows.
(B) "H" active, without auto discharge function at off state
(D) "H" active, with auto discharge function at off state
2
R1116x
PIN CONFIGURATIONS
z SOT-23-5
5
z SON1612-6
4
6
5
4
1
2
3
(Mark side)
1
2
3
PIN DESCRIPTIONS
•
•
SOT-23-5
Pin No.
Symbol
1
VDD
2
GND
3
Description
SON1612-6
Pin No.
Symbol
Description
Input Pin
1
CE
Ground Pin
2
GND
CE
Chip Enable Pin
3
VDD
Input Pin
4
NC
No Connection
4
VOUT
Output Pin
5
VOUT
Output pin
5
GND
Ground Pin
6
NC
Chip Enable Pin
Ground Pin
No Connection
3
R1116x
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
Unit
VIN
Input Voltage
6.5
V
VCE
Input Voltage (CE Pin)
6.5
V
VOUT
Output Voltage
−0.3~VIN+0.3
V
IOUT
Output Current
160
mA
PD
Power Dissipation (SOT-23-5) ∗
420
∗
Power Dissipation (SON1612-6)
mW
500
Topt
Operating Temperature Range
−40~85
°C
Tstg
Storage Temperature Range
−55~125
°C
∗) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
4
R1116x
ELECTRICAL CHARACTERISTICS
•
R1116xxx1B/D
Topt=25°C
Symbol
Item
Conditions
VOUT
Output Voltage
VIN = Set VOUT+1V
1mA <
= IOUT <
= 30mA
IOUT
Output Current
VIN−VOUT=1.0V
Min.
<
=
Typ.
Max.
3.4V
×0.985
×1.015
VOUT > 3.4V
×0.980
×1.020
VOUT
150
Unit
V
mA
VIN=Set VOUT+1V
1mA <
= IOUT <
= 150mA
28
55
1.5V <
= VOUT < 2.0V
33
66
2.0V <
= VOUT < 3.0V
35
80
3.0V <
= VOUT
Refer to the ELECTRICAL CHARACTERISTICS
by OUTPUT VOLTAGE
ΔVOUT/
ΔIOUT
Load Regulation
VDIF
Dropout Voltage
ISS
Supply Current
VIN=Set VOUT+1V, IOUT=0mA
10
18
μA
Supply Current (Standby)
VIN=Set VOUT+1V, VCE=VDD
0.1
1.0
μA
Line Regulation
IOUT=30mA
Set VOUT+0.5V
0.02
0.10
%/V
RR
Ripple Rejection
f=1kHz
f=10kHz
Ripple 0.2Vp-p
VIN−VOUT=1.0V,IOUT=30mA
VIN
Input Voltage
Istandby
ΔVOUT/
ΔVIN
ΔVOUT/
ΔTopt
<
=
VIN
<
=
6.0V
70
53
1.8
mV
dB
6.0
V
Output Voltage
Temperature Coefficient
IOUT=30mA
−40°C <
= Topt
ISC
Short Current Limit
VOUT=0V
IPD
CE Pull-down Current
VCEH
CE Input Voltage “H”
1.0
6.0
V
VCEL
CE Input Voltage “L”
0.0
0.3
V
en
RLOW
<
=
85°C
±100
ppm
/°C
40
mA
0.5
μA
Output Noise
BW=10Hz to 100kHz
30
μVrms
On Resistance of Nch Tr.
for auto-discharge
(Only for D version)
VCE=0V
70
Ω
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
5
R1116x
•
ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Topt = 25°C
Dropout Voltage VDIF (V)
Output Voltage
VOUT (V)
Condition
VOUT = 1.5V
Max.
0.54
0.86
0.50
0.75
0.46
0.70
0.44
0.65
1.5V < VOUT
<
=
1.6V
1.6V < VOUT
<
=
1.7V
1.7V < VOUT
<
=
2.0V
2.0V < VOUT
<
=
2.7V
0.37
0.56
2.7V < VOUT
<
=
4.0V
0.29
0.46
IOUT=150mA
TYPICAL APPLICATIONS
VDD
C1
VOUT
R1116x
Series
CE
(External Components)
C2 Ceramic 1.0μF Ex. Murata GRM155B30J105KE18B
Kyocera CM05X5R105K06AB
C1 Ceramic 1.0μF
6
Typ.
GND
C2
R1116x
TEST CIRCUITS
VDD
VOUT
R1116x
Series
C1
CE
V
C2
VOUT
↓
IOUT
GND
C1=Ceramic 1.0μF
C2=Ceramic 1.0μF
Fig.1 Standard test Circuit
VDD
A
ISS
VOUT
R1116x
Series
C1
CE
C2
GND
C1=Ceramic 1.0μF
C2=Ceramic 1.0μF
Fig.2 Supply Current Test Circuit
VDD
Pulse
Generator
VOUT
R1116x
Series
CE
C2
↓
IOUT
GND
C2=Ceramic 1.0μF
Fig.3 Ripple Rejection, Line Transient Response Test Circuit
7
R1116x
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current (Topt=25°C)
R1116x151x
R1116x281x
3.0
1.4
Output Voltage VOUT(V)
Output Voltage VOUT(V)
1.6
1.2
1.0
0.8
0.6
VIN=1.8V
VIN=2.0V
VIN=2.5V
VIN=3.5V
0.4
0.2
0
2.5
2.0
1.5
1.0
VIN=3.1V
VIN=3.5V
VIN=3.8V
0.5
0
0
100
200
300
400
Output Current IOUT(mA)
500
0
100
200
300
400
Output Current IOUT(mA)
500
R1116x401x
Output Voltage VOUT(V)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
VIN=4.3V
VIN=4.5V
VIN=5.0V
1.0
0.5
0
0
100
200
300
400
Output Current IOUT(mA)
500
2) Output Voltage vs. Input Voltage (Topt=25°C)
R1116x151x
R1116x281x
3.0
1.4
Output Voltage VOUT(V)
Output Voltage VOUT(V)
1.6
1.2
1.0
0.8
0.6
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
0.4
0.2
0
2.0
1.5
1.0
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
0.5
0
0
8
2.5
1
2
3
4
Input Voltage VIN(V)
5
6
0
1
2
3
4
Input Voltage VIN(V)
5
6
R1116x
R1116x401x
Output Voltage VOUT(V)
5.0
4.0
3.0
2.0
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
1.0
0
0
1
2
3
4
Input Voltage VIN(V)
5
6
3) Supply Current vs. Input Voltage (Topt=25°C)
R1116x151x
R1116x281x
20
Supply Current ISS(μA)
Supply Current ISS(μA)
10
8
5
3
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage VIN(V)
15
10
5
0
2.8
3.6
4.4
5.2
Input Voltage VIN(V)
6.0
R1116x401x
Supply Current ISS(μA)
25
20
15
10
5
0
4.0
4.5
5.0
5.5
Input Voltage VIN(V)
6.0
9
R1116x
4) Output Voltage vs. Temperature
R1116x281x
2.83
1.52
2.82
Output Voltage VOUT(V)
Output Voltage VOUT(V)
R1116x151x
1.53
1.51
1.50
1.49
1.48
1.47
1.46
-50
-25
0
25
50
75
Temperature Topt(°C)
2.81
2.80
2.79
2.78
2.77
2.76
-50
100
-25
0
25
50
75
Temperature Topt(°C)
100
R1116x401x
Output Voltage VOUT(V)
4.06
4.04
4.02
4.00
3.98
3.96
3.94
3.92
-50
-25
0
25
50
75
Temperature Topt(°C)
100
5) Supply Current vs. Temperature
16
16
14
14
12
10
8
6
4
2
0
-50
10
R1116x281x
Supply Current ISS(μA)
Supply Current ISS(μA)
R1116x151x
-25
0
25
50
75
Temperature Topt(°C)
100
12
10
8
6
4
2
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
R1116x
R1116x401x
Supply Current ISS(μA)
16
14
12
10
8
6
4
2
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
6) Dropout Voltage vs. Temperature
R1116x151x
R1116x161x
700
600
500
400
300
85°C
25°C
-40°C
200
100
Dropout Voltage VDIF(mV)
Dropout Voltage VDIF(mV)
700
0
600
500
400
300
85°C
25°C
-40°C
200
100
0
0
25
50
75
100 125
Output Current IOUT(mA)
150
0
R1116x171x
150
R1116x181x
600
500
400
300
200
85°C
25°C
-40°C
100
0
Dropout Voltage VDIF(mV)
600
Dropout Voltage VDIF(mV)
25
50
75
100 125
Output Current IOUT(mA)
500
400
300
200
85°C
25°C
-40°C
100
0
0
25
50
75
100 125
Output Current IOUT(mA)
150
0
25
50
75
100 125
Output Current IOUT(mA)
150
11
R1116x
R1116x211x
R1116x281x
400
Dropout Voltage VDIF(mV)
Dropout Voltage VDIF(mV)
500
400
300
200
85°C
25°C
-40°C
100
0
25
50
75
100 125
Output Current IOUT(mA)
150
R1116x401x
Dropout Voltage VDIF(mV)
300
250
200
150
100
85°C
25°C
-40°C
50
0
0
25
50
75
100 125
Output Current IOUT(mA)
150
7) Dropout Voltage vs. Set Output Voltage (Topt=25°C)
700
Dropout Voltage VDIF(mV)
300
250
200
150
85°C
25°C
-40°C
100
50
0
0
150mA
100mA
50mA
30mA
10mA
600
500
400
300
200
100
0
1
12
350
2
3
Set Output Voltage VREG(V)
4
0
25
50
75
100 125
Output Current IOUT(mA)
150
R1116x
8) Ripple Rejection vs. Input Bias Voltage (Topt=25°C, CIN = none, COUT = 1μF)
R1116x281x
R1116x281x
70
70
60
50
40
30
20
10
3.0
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
60
50
40
30
10
R1116x281x
70
60
50
40
30
1kHz
10kHz
100kHz
20
10
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
60
50
40
30
10
0
2.9
3.5
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
3.5
R1116x281x
R1116x281x
Ripple Vp-p=0.5V, IOUT=50mA
70
70
60
50
40
30
1kHz
10kHz
100kHz
3.0
3.0
Ripple Vp-p=0.2V, IOUT=50mA
80
0
2.9
1kHz
10kHz
100kHz
20
80
10
3.5
Ripple Vp-p=0.5V, IOUT=30mA
70
20
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
R1116x281x
80
3.0
3.0
Ripple Vp-p=0.2V, IOUT=30mA
80
0
2.9
1kHz
10kHz
100kHz
20
0
2.9
3.5
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
1kHz
10kHz
100kHz
Ripple Rejection RR(dB)
80
0
2.9
Ripple Rejection RR(dB)
Ripple Vp-p=0.5V, IOUT=1mA
80
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
3.5
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
Ripple Vp-p=0.2V, IOUT=1mA
60
50
40
30
1kHz
10kHz
100kHz
20
10
0
2.9
3.0
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
3.5
13
R1116x
9) Ripple Rejection vs. Frequency (CIN=none)
R1116x151x
R1116x151x
VIN=2.7VDC+0.5Vp-p,COUT=2.2μF
90
90
80
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
VIN=2.7VDC+0.5Vp-p,COUT=1μF
70
60
50
40
30
20
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
1
10
Frequency f(kHz)
70
60
50
40
30
20
10
0
0.1
100
R1116x281x
80
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
90
70
60
50
40
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
1
10
Frequency f(kHz)
70
60
50
40
30
20
10
0
0.1
100
R1116x401x
80
80
70
60
50
40
0
0.1
14
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
90
10
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
1
10
Frequency f(kHz)
1
10
Frequency f(kHz)
100
VIN=5VDC+0.5Vp-p,COUT=2.2μF
90
20
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
R1116x401x
VIN=5VDC+0.5Vp-p,COUT=1μF
30
100
VIN=3.8VDC+0.5Vp-p,COUT=2.2μF
90
20
1
10
Frequency f(kHz)
R1116x281x
VIN=3.8VDC+0.5Vp-p,COUT=1μF
30
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
100
70
60
50
40
30
20
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
1
10
Frequency f(kHz)
100
R1116x
10) Input Transient Response (IOUT=30mA, CIN= none, tr=tf=5μs, COUT = Ceramic 1μF)
R1116x151x
R1116x281x
3
2.84
1.53
2
1.52
1
1.51
0
Output Voltage
1.50
1.49
1.48
6
5
Input Voltage
2.83
4
3
2.82
2
2.81
Output Voltage
2.80
1
2.79
0
Input Voltage VIN(V)
Input Voltage
2.85
Output Voltage VOUT(V)
1.54
4
Input Voltage VIN(V)
Output Voltage VOUT(V)
1.55
2.78
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
R1116x401x
7
4.04
4.03
6
Input Voltage
5
4
4.02
3
4.01
Output Voltage
4.00
2
3.99
1
3.98
0
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
Input Voltage VIN(V)
Output Voltage VOUT(V)
4.05
11) Load Transient Response (tr=tf=0.5μs, CIN=Ceramic 1μF)
R1116x151x
R1116x151x
60
1.8
30
0
1.7
Output Current 0mA↔30mA
1.6
1.5
Output Voltage
1.4
1.3
1.9
60
1.8
30
0
1.7
Output Current 0mA↔30mA
1.6
1.5
Output Voltage
1.4
Output Current IOUT(mA)
1.9
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 2.2μF
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 1.0μF
1.3
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
15
R1116x
R1116x151x
R1116x151x
20
1.8
10
0
1.7
Output Current 1mA↔10mA
1.6
Output Voltage
1.5
1.4
1.3
1.9
20
1.8
10
0
1.7
Output Current 1mA↔10mA
1.6
Output Voltage
1.5
1.4
1.3
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
R1116x151x
R1116x151x
150
1.8
100
1.7
50
Output Current 50mA↔100mA
1.6
0
Output Voltage
1.5
1.4
1.3
1.9
150
1.8
100
1.7
1.6
0
Output Voltage
1.5
1.4
1.3
2
4
6
8 10 12 14 16 18 20
Time t(μs)
0
R1116x281x
30
Output Voltage
2.8
2.7
2.6
0
Output Voltage VOUT(V)
3.1
Output Current IOUT(mA)
60
2.9
6
8 10 12 14 16 18 20
Time t(μs)
VIN=3.8V,COUT=Ceramic 2.2μF
3.2
Output Current 0mA↔30mA
4
R1116x281x
VIN=3.8V,COUT=Ceramic 1.0μF
3.0
2
3.2
60
3.1
30
3.0
Output Current 0mA↔30mA
2.9
2.8
Output Voltage
2.7
2.6
0
10 20 30 40 50 60 70 80 90
Time t(μs)
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
0
Output Current IOUT(mA)
0
Output Voltage VOUT(V)
50
Output Current 50mA↔100mA
Output Current IOUT(mA)
1.9
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 2.2μF
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 1.0μF
16
Output Current IOUT(mA)
1.9
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 2.2μF
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 1.0μF
R1116x
R1116x281x
R1116x281x
20
3.1
10
3.0
0
Output Current 1mA↔10mA
2.9
Output Voltage
2.8
2.7
2.6
3.2
20
3.1
10
3.0
2.9
Output Voltage
2.8
2.7
2.9
10 20 30 40 50 60 70 80 90
Time t(μs)
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
R1116x281x
R1116x281x
3.2
150
3.1
100
3.0
50
Output Current 50mA↔100mA
2.9
0
Output Voltage
2.8
2.7
Output Voltage VOUT(V)
VIN=3.8V,COUT=Ceramic 2.2μF
Output Current IOUT(mA)
2.6
3.2
150
3.1
100
3.0
50
Output Current 50mA↔100mA
2.9
0
Output Voltage
2.8
2.7
2.6
0
2
4
6
8 10 12 14 16 18 20
Time t(μs)
0
R1116x401x
30
Output Voltage
4.0
3.9
3.8
0
Output Voltage VOUT(V)
4.3
Output Current IOUT(mA)
60
4.1
6
8 10 12 14 16 18 20
Time t(μs)
VIN=5.0V,COUT=Ceramic 2.2μF
4.4
Output Current 0mA↔30mA
4
R1116x401x
VIN=5.0V,COUT=Ceramic 1.0μF
4.2
2
4.4
60
4.3
30
4.2
Output Current 0mA↔30mA
4.1
Output Voltage
4.0
3.9
0
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=3.8V,COUT=Ceramic 1.0μF
Output Current IOUT(mA)
0
Output Voltage VOUT(V)
0
Output Current 1mA↔10mA
Output Current IOUT(mA)
3.2
Output Voltage VOUT(V)
VIN=3.8V,COUT=Ceramic 2.2μF
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=3.8V,COUT=Ceramic 1.0μF
3.8
0
10 20 30 40 50 60 70 80 90
Time t(μs)
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
17
R1116x
R1116x401x
R1116x401x
20
4.3
10
4.2
0
Output Current 1mA↔10mA
4.1
Output Voltage
4.0
3.9
3.8
4.4
20
4.3
10
4.2
4.1
Output Voltage
4.0
3.9
3.8
10 20 30 40 50 60 70 80 90
Time t(μs)
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
R1116x401x
R1116x401x
4.4
150
4.3
100
4.2
50
Output Current 50mA↔100mA
4.1
0
Output Voltage
4.0
3.9
3.8
Output Voltage VOUT(V)
VIN=5.0V,COUT=Ceramic 2.2μF
Output Current IOUT(mA)
VIN=5.0V,COUT=Ceramic 1.0μF
4.4
150
4.3
100
4.2
50
Output Current 50mA↔100mA
4.1
0
Output Voltage
4.0
3.9
3.8
0
2
4
6
8 10 12 14 16 18 20
Time t(μs)
0
2
4
6
8 10 12 14 16 18 20
Time t(μs)
12) Turn-on/off speed with CE pin (D version) (CIN=Ceramic 1.0μF, COUT=Ceramic 1.0μF)
4
3
2
3
1
Output Voltage
2
1
IOUT=0mA
IOUT=30mA
IOUT=150mA
0
-5
0
5 10 15 20 25 30 35 40 45
Time t(μs)
0
VIN=2.5V
6
Output Voltage VOUT(V)
CE Input Voltage
5
4
CE Input Voltage VCE(V)
Output Voltage VOUT(V)
6
18
R1116x151D
VIN=2.5V
5
CE Input Voltage
3
IOUT=0mA
IOUT=30mA
IOUT=150mA
4
3
4
2
2
1
0
1
Output Voltage
0
-40
0
40 80 120 160 200 240 280 320 360
Time t(μs)
CE Input Voltage VCE(V)
R1116x151D
Output Current IOUT(mA)
0
Output Voltage VOUT(V)
0
Output Current 1mA↔10mA
Output Current IOUT(mA)
4.4
Output Voltage VOUT(V)
VIN=5.0V,COUT=Ceramic 2.2μF
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=5.0V,COUT=Ceramic 1.0μF
R1116x
CE Input Voltage
8
3
7
6
2
5
1
4
0
Output Voltage
2
IOUT=0mA
IOUT=30mA
IOUT=150mA
1
0
-5
0
VIN=3.8V
2
1
5
4
0
Output Voltage
3
2
0
-40
0
14
6
12
10
4
8
2
0
6
Output Voltage
IOUT=0mA
IOUT=30mA
IOUT=150mA
0
-5
0
5 10 15 20 25 30 35 40 45
Time t(μs)
Output Voltage VOUT(V)
8
CE Input Voltage VCE(V)
Output Voltage VOUT(V)
CE Input Voltage
2
40 80 120 160 200 240 280 320 360
Time t(μs)
R1116x401D
VIN=5.0V
4
IOUT=0mA
IOUT=30mA
IOUT=150mA
1
R1116x401D
12
3
CE Input Voltage
6
5 10 15 20 25 30 35 40 45
Time t(μs)
14
4
VIN=5.0V
8
6
10
4
CE Input Voltage
2
8
0
6
IOUT=0mA
IOUT=30mA
IOUT=150mA
4
2
0
CE Input Voltage VCE(V)
3
Output Voltage VOUT(V)
7
4
CE Input Voltage VCE(V)
8
Output Voltage VOUT(V)
R1116x281D
VIN=3.8V
CE Input Voltage VCE(V)
R1116x281D
Output Voltage
-40
0
40 80 120 160 200 240 280 320 360
Time t(μs)
19
R1116x
TECHNICAL NOTES
VDD
VOUT
R1116x
Series
C1
CE
C2
GND
(External Components)
C2 Ceramic 1.0μF Ex. Murata GRM155B30J105KE18B
Kyocera CM05X5R105K06AB
C1 Ceramic 1.0μF
When using these ICs, consider the following points:
1.Mounting on PCB
Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result.
Connect a capacitor with a capacitance value as much as 1.0μF or more as C1 between VDD and GND pin, and
as close as possible to the pins.
Set external components, especially the output capacitor, as close as possible to the ICs, and make wiring as
short as possible.
2.Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a capacitor C2 with good frequency characteristics and ESR (Equivalent Series Resistance).
(Note: If additional ceramic capacitors are connected with parallel to the output pin with an output capacitor for
phase compensation, the operation might be unstable. Because of this, test these ICs with as same external
components as ones to be used on the PCB.)
If you use a tantalum type capacitor and ESR value of the capacitor is large, output might be unstable.
Evaluate your circuit with considering frequency characteristics.
Depending on the capacitor size, manufacturer, and part number, the bias characteristics and temperature
characteristics are different. Evaluate the circuit with actual using capacitors.
20
R1116x
ESR vs. Output Current
When using these ICs, consider the following points:
The relations between IOUT (Output Current) and ESR of an output capacitor are shown below.
The conditions when the white noise level is under 40μV (Avg.) are marked as the hatched area in the graph.
Measurement conditions
VIN=VOUT+1V
COUT: GRM155B30J105KE18B
Frequency Band: 10Hz to 2MHz
Temperature: −40°C to 25°C
R1116x151x
R1116x281x
VIN=1.52V to 6.5V, CIN=COUT=1.0μF
100
VIN=2.82V to 6.5V
100
Topt=85°C
Topt=85°C
10
ESR(Ω)
ESR(Ω)
10
Topt=-40°C
1
0.1
Topt=-40°C
1
0.1
0.01
0.01
0
30
60
90
120
Output Current IOUT(mA)
150
0
30
60
90
120
Output Current IOUT(mA)
150
R1116x401x
VIN=4.02V to 6.5V
100
Topt=85°C
ESR(Ω)
10
Topt=-40°C
1
0.1
0.01
0
30
60
90
120
Output Current IOUT(mA)
150
21
1. The products and the product specifications described in this document are subject to change or discontinuation of
production without notice for reasons such as improvement. Therefore, before deciding to use the products, please
refer to Ricoh sales representatives for the latest information thereon.
2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written
consent of Ricoh.
3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise
taking out of your country the products or the technical information described herein.
4. The technical information described in this document shows typical characteristics of and example application circuits
for the products. The release of such information is not to be construed as a warranty of or a grant of license under
Ricoh's or any third party's intellectual property rights or any other rights.
5. The products listed in this document are intended and designed for use as general electronic components in standard
applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products,
amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality
and reliability, for example, in a highly specific application where the failure or misoperation of the product could result
in human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and
transportation equipment, combustion equipment, safety devices, life support system etc.) should first contact us.
6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products
are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from
such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy
feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7. Anti-radiation design is not implemented in the products described in this document.
8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and
characteristics in the evaluation stage.
9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and
characteristics of the products under operation or storage.
10. There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the
case of recognizing the marking characteristic with AOI, please contact Ricoh sales or our distributor before attempting
to use AOI.
11. Please contact Ricoh sales representatives should you have any questions or comments concerning the products or
the technical information.
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Ricoh is committed to reducing the environmental loading materials in electrical devices
with a view to contributing to the protection of human health and the environment.
Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since
April 1, 2012.
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