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R1116N401B-TR-FE

R1116N401B-TR-FE

  • 厂商:

    RICOH(理光)

  • 封装:

    SOT23-5

  • 描述:

    IC REG LINEAR 4V 150MA SOT23-5

  • 数据手册
  • 价格&库存
R1116N401B-TR-FE 数据手册
R1116x SERIES LOW NOISE 150mA LDO REGULATOR NO. EA-126-111026 OUTLINE The R1116x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply current, low on Resistance, and high ripple rejection. Each of these ICs consists of a voltage reference unit, an error amplifier, resistor-net for voltage setting, a short current limit circuit, a chip enable circuit, and so on. These ICs perform with low dropout voltage and the chip-enable function. The supply current at no load of this IC is only 10μA, and the line transient response and the load transient response of the R1116x Series are excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment. The supply current at no load of R1116x Series is remarkably reduced compared with R1114x Series. The mode change signal to reduce the supply current is not necessary. The output voltage accuracy is also improved. (±1.5%) The output voltage of these ICs is fixed with high accuracy. Since the packages for these ICs are SOT-23-5 and SON1612-6 therefore high density mounting of the ICs on boards is possible. R1126N Series that a pin configuration differs from R1116N Series are available. FEATURES • • • • • • • • • • • • Supply Current ..................................................................... Typ. 10μA Standby Current ................................................................... Typ. 0.1μA Input Voltage Range ............................................................ 1.8V to 6.0V Output Voltage Range.......................................................... 1.5V to 4.0V (0.1V steps) (For other voltages, please refer to MARK INFORMATIONS.) Dropout Voltage ................................................................... Typ. 0.29V (IOUT=150mA,VOUT=2.8V) Ripple Rejection................................................................... Typ. 70dB (f=1kHz, VOUT=3.0V) Typ. 53dB (f=10kHz) Output Voltage Accuracy...................................................... ±1.5% (1.5V < = VOUT < = 3.0V), ±2.0% (VOUT>3.0V) Temperature-Drift Coefficient of Output Voltage .................. Typ. ±100ppm/°C Line Regulation .................................................................... Typ. 0.02%/V Packages ............................................................................ SOT-23-5 , SON1612-6 Built-in Fold Back Protection Circuit .................................... Typ. 40mA (Current at short mode) Ceramic capacitors are recommended to be used with this IC ... CIN=COUT=1.0μF (Ceramic) APPLICATIONS • • • • Power source for portable communication equipment. Power source for portable music player. Power source for electrical appliances such as cameras, VCRs and camcorders. Power source for battery-powered equipment. 1 R1116x BLOCK DIAGRAMS R1116xxx1B R1116xxx1D VDD VOUT VDD Vref VOUT Vref Current Limit Current Limit CE GND CE GND SELECTION GUIDE The output voltage, auto discharge function, package, and the taping type, etc. for the ICs can be selected at the user’s request. Product Name Package Quantity per Reel Pb Free Halogen Free R1116Dxx1∗-TR-FE SON1612-6 4,000 pcs Yes Yes R1116Nxx1∗-TR-FE SOT-23-5 3,000 pcs Yes Yes xx : The output voltage can be designated in the range from 1.5V(15) to 4.0V(40) in 0.1V steps. (For other voltages, please refer to MARK INFORMATIONS.) ∗ : CE pin polarity and auto discharge function at off state are options as follows. (B) "H" active, without auto discharge function at off state (D) "H" active, with auto discharge function at off state 2 R1116x PIN CONFIGURATIONS z SOT-23-5 5 z SON1612-6 4 6 5 4 1 2 3 (Mark side) 1 2 3 PIN DESCRIPTIONS • • SOT-23-5 Pin No. Symbol 1 VDD 2 GND 3 Description SON1612-6 Pin No. Symbol Description Input Pin 1 CE Ground Pin 2 GND CE Chip Enable Pin 3 VDD Input Pin 4 NC No Connection 4 VOUT Output Pin 5 VOUT Output pin 5 GND Ground Pin 6 NC Chip Enable Pin Ground Pin No Connection 3 R1116x ABSOLUTE MAXIMUM RATINGS Symbol Item Rating Unit VIN Input Voltage 6.5 V VCE Input Voltage (CE Pin) 6.5 V VOUT Output Voltage −0.3~VIN+0.3 V IOUT Output Current 160 mA PD Power Dissipation (SOT-23-5) ∗ 420 ∗ Power Dissipation (SON1612-6) mW 500 Topt Operating Temperature Range −40~85 °C Tstg Storage Temperature Range −55~125 °C ∗) For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. 4 R1116x ELECTRICAL CHARACTERISTICS • R1116xxx1B/D Topt=25°C Symbol Item Conditions VOUT Output Voltage VIN = Set VOUT+1V 1mA < = IOUT < = 30mA IOUT Output Current VIN−VOUT=1.0V Min. < = Typ. Max. 3.4V ×0.985 ×1.015 VOUT > 3.4V ×0.980 ×1.020 VOUT 150 Unit V mA VIN=Set VOUT+1V 1mA < = IOUT < = 150mA 28 55 1.5V < = VOUT < 2.0V 33 66 2.0V < = VOUT < 3.0V 35 80 3.0V < = VOUT Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE ΔVOUT/ ΔIOUT Load Regulation VDIF Dropout Voltage ISS Supply Current VIN=Set VOUT+1V, IOUT=0mA 10 18 μA Supply Current (Standby) VIN=Set VOUT+1V, VCE=VDD 0.1 1.0 μA Line Regulation IOUT=30mA Set VOUT+0.5V 0.02 0.10 %/V RR Ripple Rejection f=1kHz f=10kHz Ripple 0.2Vp-p VIN−VOUT=1.0V,IOUT=30mA VIN Input Voltage Istandby ΔVOUT/ ΔVIN ΔVOUT/ ΔTopt < = VIN < = 6.0V 70 53 1.8 mV dB 6.0 V Output Voltage Temperature Coefficient IOUT=30mA −40°C < = Topt ISC Short Current Limit VOUT=0V IPD CE Pull-down Current VCEH CE Input Voltage “H” 1.0 6.0 V VCEL CE Input Voltage “L” 0.0 0.3 V en RLOW < = 85°C ±100 ppm /°C 40 mA 0.5 μA Output Noise BW=10Hz to 100kHz 30 μVrms On Resistance of Nch Tr. for auto-discharge (Only for D version) VCE=0V 70 Ω RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 5 R1116x • ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Topt = 25°C Dropout Voltage VDIF (V) Output Voltage VOUT (V) Condition VOUT = 1.5V Max. 0.54 0.86 0.50 0.75 0.46 0.70 0.44 0.65 1.5V < VOUT < = 1.6V 1.6V < VOUT < = 1.7V 1.7V < VOUT < = 2.0V 2.0V < VOUT < = 2.7V 0.37 0.56 2.7V < VOUT < = 4.0V 0.29 0.46 IOUT=150mA TYPICAL APPLICATIONS VDD C1 VOUT R1116x Series CE (External Components) C2 Ceramic 1.0μF Ex. Murata GRM155B30J105KE18B Kyocera CM05X5R105K06AB C1 Ceramic 1.0μF 6 Typ. GND C2 R1116x TEST CIRCUITS VDD VOUT R1116x Series C1 CE V C2 VOUT ↓ IOUT GND C1=Ceramic 1.0μF C2=Ceramic 1.0μF Fig.1 Standard test Circuit VDD A ISS VOUT R1116x Series C1 CE C2 GND C1=Ceramic 1.0μF C2=Ceramic 1.0μF Fig.2 Supply Current Test Circuit VDD Pulse Generator VOUT R1116x Series CE C2 ↓ IOUT GND C2=Ceramic 1.0μF Fig.3 Ripple Rejection, Line Transient Response Test Circuit 7 R1116x TYPICAL CHARACTERISTICS 1) Output Voltage vs. Output Current (Topt=25°C) R1116x151x R1116x281x 3.0 1.4 Output Voltage VOUT(V) Output Voltage VOUT(V) 1.6 1.2 1.0 0.8 0.6 VIN=1.8V VIN=2.0V VIN=2.5V VIN=3.5V 0.4 0.2 0 2.5 2.0 1.5 1.0 VIN=3.1V VIN=3.5V VIN=3.8V 0.5 0 0 100 200 300 400 Output Current IOUT(mA) 500 0 100 200 300 400 Output Current IOUT(mA) 500 R1116x401x Output Voltage VOUT(V) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 VIN=4.3V VIN=4.5V VIN=5.0V 1.0 0.5 0 0 100 200 300 400 Output Current IOUT(mA) 500 2) Output Voltage vs. Input Voltage (Topt=25°C) R1116x151x R1116x281x 3.0 1.4 Output Voltage VOUT(V) Output Voltage VOUT(V) 1.6 1.2 1.0 0.8 0.6 IOUT=1mA IOUT=30mA IOUT=50mA IOUT=150mA 0.4 0.2 0 2.0 1.5 1.0 IOUT=1mA IOUT=30mA IOUT=50mA IOUT=150mA 0.5 0 0 8 2.5 1 2 3 4 Input Voltage VIN(V) 5 6 0 1 2 3 4 Input Voltage VIN(V) 5 6 R1116x R1116x401x Output Voltage VOUT(V) 5.0 4.0 3.0 2.0 IOUT=1mA IOUT=30mA IOUT=50mA IOUT=150mA 1.0 0 0 1 2 3 4 Input Voltage VIN(V) 5 6 3) Supply Current vs. Input Voltage (Topt=25°C) R1116x151x R1116x281x 20 Supply Current ISS(μA) Supply Current ISS(μA) 10 8 5 3 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage VIN(V) 15 10 5 0 2.8 3.6 4.4 5.2 Input Voltage VIN(V) 6.0 R1116x401x Supply Current ISS(μA) 25 20 15 10 5 0 4.0 4.5 5.0 5.5 Input Voltage VIN(V) 6.0 9 R1116x 4) Output Voltage vs. Temperature R1116x281x 2.83 1.52 2.82 Output Voltage VOUT(V) Output Voltage VOUT(V) R1116x151x 1.53 1.51 1.50 1.49 1.48 1.47 1.46 -50 -25 0 25 50 75 Temperature Topt(°C) 2.81 2.80 2.79 2.78 2.77 2.76 -50 100 -25 0 25 50 75 Temperature Topt(°C) 100 R1116x401x Output Voltage VOUT(V) 4.06 4.04 4.02 4.00 3.98 3.96 3.94 3.92 -50 -25 0 25 50 75 Temperature Topt(°C) 100 5) Supply Current vs. Temperature 16 16 14 14 12 10 8 6 4 2 0 -50 10 R1116x281x Supply Current ISS(μA) Supply Current ISS(μA) R1116x151x -25 0 25 50 75 Temperature Topt(°C) 100 12 10 8 6 4 2 0 -50 -25 0 25 50 75 Temperature Topt(°C) 100 R1116x R1116x401x Supply Current ISS(μA) 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 Temperature Topt(°C) 100 6) Dropout Voltage vs. Temperature R1116x151x R1116x161x 700 600 500 400 300 85°C 25°C -40°C 200 100 Dropout Voltage VDIF(mV) Dropout Voltage VDIF(mV) 700 0 600 500 400 300 85°C 25°C -40°C 200 100 0 0 25 50 75 100 125 Output Current IOUT(mA) 150 0 R1116x171x 150 R1116x181x 600 500 400 300 200 85°C 25°C -40°C 100 0 Dropout Voltage VDIF(mV) 600 Dropout Voltage VDIF(mV) 25 50 75 100 125 Output Current IOUT(mA) 500 400 300 200 85°C 25°C -40°C 100 0 0 25 50 75 100 125 Output Current IOUT(mA) 150 0 25 50 75 100 125 Output Current IOUT(mA) 150 11 R1116x R1116x211x R1116x281x 400 Dropout Voltage VDIF(mV) Dropout Voltage VDIF(mV) 500 400 300 200 85°C 25°C -40°C 100 0 25 50 75 100 125 Output Current IOUT(mA) 150 R1116x401x Dropout Voltage VDIF(mV) 300 250 200 150 100 85°C 25°C -40°C 50 0 0 25 50 75 100 125 Output Current IOUT(mA) 150 7) Dropout Voltage vs. Set Output Voltage (Topt=25°C) 700 Dropout Voltage VDIF(mV) 300 250 200 150 85°C 25°C -40°C 100 50 0 0 150mA 100mA 50mA 30mA 10mA 600 500 400 300 200 100 0 1 12 350 2 3 Set Output Voltage VREG(V) 4 0 25 50 75 100 125 Output Current IOUT(mA) 150 R1116x 8) Ripple Rejection vs. Input Bias Voltage (Topt=25°C, CIN = none, COUT = 1μF) R1116x281x R1116x281x 70 70 60 50 40 30 20 10 3.0 3.1 3.2 3.3 3.4 Input Voltage VIN(V) 60 50 40 30 10 R1116x281x 70 60 50 40 30 1kHz 10kHz 100kHz 20 10 3.1 3.2 3.3 3.4 Input Voltage VIN(V) 60 50 40 30 10 0 2.9 3.5 3.1 3.2 3.3 3.4 Input Voltage VIN(V) 3.5 R1116x281x R1116x281x Ripple Vp-p=0.5V, IOUT=50mA 70 70 60 50 40 30 1kHz 10kHz 100kHz 3.0 3.0 Ripple Vp-p=0.2V, IOUT=50mA 80 0 2.9 1kHz 10kHz 100kHz 20 80 10 3.5 Ripple Vp-p=0.5V, IOUT=30mA 70 20 3.1 3.2 3.3 3.4 Input Voltage VIN(V) R1116x281x 80 3.0 3.0 Ripple Vp-p=0.2V, IOUT=30mA 80 0 2.9 1kHz 10kHz 100kHz 20 0 2.9 3.5 Ripple Rejection RR(dB) Ripple Rejection RR(dB) 1kHz 10kHz 100kHz Ripple Rejection RR(dB) 80 0 2.9 Ripple Rejection RR(dB) Ripple Vp-p=0.5V, IOUT=1mA 80 3.1 3.2 3.3 3.4 Input Voltage VIN(V) 3.5 Ripple Rejection RR(dB) Ripple Rejection RR(dB) Ripple Vp-p=0.2V, IOUT=1mA 60 50 40 30 1kHz 10kHz 100kHz 20 10 0 2.9 3.0 3.1 3.2 3.3 3.4 Input Voltage VIN(V) 3.5 13 R1116x 9) Ripple Rejection vs. Frequency (CIN=none) R1116x151x R1116x151x VIN=2.7VDC+0.5Vp-p,COUT=2.2μF 90 90 80 80 Ripple Rejection RR(dB) Ripple Rejection RR(dB) VIN=2.7VDC+0.5Vp-p,COUT=1μF 70 60 50 40 30 20 10 0 0.1 IOUT=1mA IOUT=30mA IOUT=50mA IOUT=150mA 1 10 Frequency f(kHz) 70 60 50 40 30 20 10 0 0.1 100 R1116x281x 80 80 Ripple Rejection RR(dB) Ripple Rejection RR(dB) 90 70 60 50 40 10 0 0.1 IOUT=1mA IOUT=30mA IOUT=50mA IOUT=150mA 1 10 Frequency f(kHz) 70 60 50 40 30 20 10 0 0.1 100 R1116x401x 80 80 70 60 50 40 0 0.1 14 Ripple Rejection RR(dB) Ripple Rejection RR(dB) 90 10 IOUT=1mA IOUT=30mA IOUT=50mA IOUT=150mA 1 10 Frequency f(kHz) 1 10 Frequency f(kHz) 100 VIN=5VDC+0.5Vp-p,COUT=2.2μF 90 20 IOUT=1mA IOUT=30mA IOUT=50mA IOUT=150mA R1116x401x VIN=5VDC+0.5Vp-p,COUT=1μF 30 100 VIN=3.8VDC+0.5Vp-p,COUT=2.2μF 90 20 1 10 Frequency f(kHz) R1116x281x VIN=3.8VDC+0.5Vp-p,COUT=1μF 30 IOUT=1mA IOUT=30mA IOUT=50mA IOUT=150mA 100 70 60 50 40 30 20 10 0 0.1 IOUT=1mA IOUT=30mA IOUT=50mA IOUT=150mA 1 10 Frequency f(kHz) 100 R1116x 10) Input Transient Response (IOUT=30mA, CIN= none, tr=tf=5μs, COUT = Ceramic 1μF) R1116x151x R1116x281x 3 2.84 1.53 2 1.52 1 1.51 0 Output Voltage 1.50 1.49 1.48 6 5 Input Voltage 2.83 4 3 2.82 2 2.81 Output Voltage 2.80 1 2.79 0 Input Voltage VIN(V) Input Voltage 2.85 Output Voltage VOUT(V) 1.54 4 Input Voltage VIN(V) Output Voltage VOUT(V) 1.55 2.78 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) R1116x401x 7 4.04 4.03 6 Input Voltage 5 4 4.02 3 4.01 Output Voltage 4.00 2 3.99 1 3.98 0 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) Input Voltage VIN(V) Output Voltage VOUT(V) 4.05 11) Load Transient Response (tr=tf=0.5μs, CIN=Ceramic 1μF) R1116x151x R1116x151x 60 1.8 30 0 1.7 Output Current 0mA↔30mA 1.6 1.5 Output Voltage 1.4 1.3 1.9 60 1.8 30 0 1.7 Output Current 0mA↔30mA 1.6 1.5 Output Voltage 1.4 Output Current IOUT(mA) 1.9 Output Voltage VOUT(V) VIN=2.5V,COUT=Ceramic 2.2μF Output Current IOUT(mA) Output Voltage VOUT(V) VIN=2.5V,COUT=Ceramic 1.0μF 1.3 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) 15 R1116x R1116x151x R1116x151x 20 1.8 10 0 1.7 Output Current 1mA↔10mA 1.6 Output Voltage 1.5 1.4 1.3 1.9 20 1.8 10 0 1.7 Output Current 1mA↔10mA 1.6 Output Voltage 1.5 1.4 1.3 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) R1116x151x R1116x151x 150 1.8 100 1.7 50 Output Current 50mA↔100mA 1.6 0 Output Voltage 1.5 1.4 1.3 1.9 150 1.8 100 1.7 1.6 0 Output Voltage 1.5 1.4 1.3 2 4 6 8 10 12 14 16 18 20 Time t(μs) 0 R1116x281x 30 Output Voltage 2.8 2.7 2.6 0 Output Voltage VOUT(V) 3.1 Output Current IOUT(mA) 60 2.9 6 8 10 12 14 16 18 20 Time t(μs) VIN=3.8V,COUT=Ceramic 2.2μF 3.2 Output Current 0mA↔30mA 4 R1116x281x VIN=3.8V,COUT=Ceramic 1.0μF 3.0 2 3.2 60 3.1 30 3.0 Output Current 0mA↔30mA 2.9 2.8 Output Voltage 2.7 2.6 0 10 20 30 40 50 60 70 80 90 Time t(μs) 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) 0 Output Current IOUT(mA) 0 Output Voltage VOUT(V) 50 Output Current 50mA↔100mA Output Current IOUT(mA) 1.9 Output Voltage VOUT(V) VIN=2.5V,COUT=Ceramic 2.2μF Output Current IOUT(mA) Output Voltage VOUT(V) VIN=2.5V,COUT=Ceramic 1.0μF 16 Output Current IOUT(mA) 1.9 Output Voltage VOUT(V) VIN=2.5V,COUT=Ceramic 2.2μF Output Current IOUT(mA) Output Voltage VOUT(V) VIN=2.5V,COUT=Ceramic 1.0μF R1116x R1116x281x R1116x281x 20 3.1 10 3.0 0 Output Current 1mA↔10mA 2.9 Output Voltage 2.8 2.7 2.6 3.2 20 3.1 10 3.0 2.9 Output Voltage 2.8 2.7 2.9 10 20 30 40 50 60 70 80 90 Time t(μs) 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) R1116x281x R1116x281x 3.2 150 3.1 100 3.0 50 Output Current 50mA↔100mA 2.9 0 Output Voltage 2.8 2.7 Output Voltage VOUT(V) VIN=3.8V,COUT=Ceramic 2.2μF Output Current IOUT(mA) 2.6 3.2 150 3.1 100 3.0 50 Output Current 50mA↔100mA 2.9 0 Output Voltage 2.8 2.7 2.6 0 2 4 6 8 10 12 14 16 18 20 Time t(μs) 0 R1116x401x 30 Output Voltage 4.0 3.9 3.8 0 Output Voltage VOUT(V) 4.3 Output Current IOUT(mA) 60 4.1 6 8 10 12 14 16 18 20 Time t(μs) VIN=5.0V,COUT=Ceramic 2.2μF 4.4 Output Current 0mA↔30mA 4 R1116x401x VIN=5.0V,COUT=Ceramic 1.0μF 4.2 2 4.4 60 4.3 30 4.2 Output Current 0mA↔30mA 4.1 Output Voltage 4.0 3.9 0 Output Current IOUT(mA) Output Voltage VOUT(V) VIN=3.8V,COUT=Ceramic 1.0μF Output Current IOUT(mA) 0 Output Voltage VOUT(V) 0 Output Current 1mA↔10mA Output Current IOUT(mA) 3.2 Output Voltage VOUT(V) VIN=3.8V,COUT=Ceramic 2.2μF Output Current IOUT(mA) Output Voltage VOUT(V) VIN=3.8V,COUT=Ceramic 1.0μF 3.8 0 10 20 30 40 50 60 70 80 90 Time t(μs) 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) 17 R1116x R1116x401x R1116x401x 20 4.3 10 4.2 0 Output Current 1mA↔10mA 4.1 Output Voltage 4.0 3.9 3.8 4.4 20 4.3 10 4.2 4.1 Output Voltage 4.0 3.9 3.8 10 20 30 40 50 60 70 80 90 Time t(μs) 0 10 20 30 40 50 60 70 80 90 100 Time t(μs) R1116x401x R1116x401x 4.4 150 4.3 100 4.2 50 Output Current 50mA↔100mA 4.1 0 Output Voltage 4.0 3.9 3.8 Output Voltage VOUT(V) VIN=5.0V,COUT=Ceramic 2.2μF Output Current IOUT(mA) VIN=5.0V,COUT=Ceramic 1.0μF 4.4 150 4.3 100 4.2 50 Output Current 50mA↔100mA 4.1 0 Output Voltage 4.0 3.9 3.8 0 2 4 6 8 10 12 14 16 18 20 Time t(μs) 0 2 4 6 8 10 12 14 16 18 20 Time t(μs) 12) Turn-on/off speed with CE pin (D version) (CIN=Ceramic 1.0μF, COUT=Ceramic 1.0μF) 4 3 2 3 1 Output Voltage 2 1 IOUT=0mA IOUT=30mA IOUT=150mA 0 -5 0 5 10 15 20 25 30 35 40 45 Time t(μs) 0 VIN=2.5V 6 Output Voltage VOUT(V) CE Input Voltage 5 4 CE Input Voltage VCE(V) Output Voltage VOUT(V) 6 18 R1116x151D VIN=2.5V 5 CE Input Voltage 3 IOUT=0mA IOUT=30mA IOUT=150mA 4 3 4 2 2 1 0 1 Output Voltage 0 -40 0 40 80 120 160 200 240 280 320 360 Time t(μs) CE Input Voltage VCE(V) R1116x151D Output Current IOUT(mA) 0 Output Voltage VOUT(V) 0 Output Current 1mA↔10mA Output Current IOUT(mA) 4.4 Output Voltage VOUT(V) VIN=5.0V,COUT=Ceramic 2.2μF Output Current IOUT(mA) Output Voltage VOUT(V) VIN=5.0V,COUT=Ceramic 1.0μF R1116x CE Input Voltage 8 3 7 6 2 5 1 4 0 Output Voltage 2 IOUT=0mA IOUT=30mA IOUT=150mA 1 0 -5 0 VIN=3.8V 2 1 5 4 0 Output Voltage 3 2 0 -40 0 14 6 12 10 4 8 2 0 6 Output Voltage IOUT=0mA IOUT=30mA IOUT=150mA 0 -5 0 5 10 15 20 25 30 35 40 45 Time t(μs) Output Voltage VOUT(V) 8 CE Input Voltage VCE(V) Output Voltage VOUT(V) CE Input Voltage 2 40 80 120 160 200 240 280 320 360 Time t(μs) R1116x401D VIN=5.0V 4 IOUT=0mA IOUT=30mA IOUT=150mA 1 R1116x401D 12 3 CE Input Voltage 6 5 10 15 20 25 30 35 40 45 Time t(μs) 14 4 VIN=5.0V 8 6 10 4 CE Input Voltage 2 8 0 6 IOUT=0mA IOUT=30mA IOUT=150mA 4 2 0 CE Input Voltage VCE(V) 3 Output Voltage VOUT(V) 7 4 CE Input Voltage VCE(V) 8 Output Voltage VOUT(V) R1116x281D VIN=3.8V CE Input Voltage VCE(V) R1116x281D Output Voltage -40 0 40 80 120 160 200 240 280 320 360 Time t(μs) 19 R1116x TECHNICAL NOTES VDD VOUT R1116x Series C1 CE C2 GND (External Components) C2 Ceramic 1.0μF Ex. Murata GRM155B30J105KE18B Kyocera CM05X5R105K06AB C1 Ceramic 1.0μF When using these ICs, consider the following points: 1.Mounting on PCB Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result. Connect a capacitor with a capacitance value as much as 1.0μF or more as C1 between VDD and GND pin, and as close as possible to the pins. Set external components, especially the output capacitor, as close as possible to the ICs, and make wiring as short as possible. 2.Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a capacitor C2 with good frequency characteristics and ESR (Equivalent Series Resistance). (Note: If additional ceramic capacitors are connected with parallel to the output pin with an output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) If you use a tantalum type capacitor and ESR value of the capacitor is large, output might be unstable. Evaluate your circuit with considering frequency characteristics. Depending on the capacitor size, manufacturer, and part number, the bias characteristics and temperature characteristics are different. Evaluate the circuit with actual using capacitors. 20 R1116x ESR vs. Output Current When using these ICs, consider the following points: The relations between IOUT (Output Current) and ESR of an output capacitor are shown below. The conditions when the white noise level is under 40μV (Avg.) are marked as the hatched area in the graph. Measurement conditions VIN=VOUT+1V COUT: GRM155B30J105KE18B Frequency Band: 10Hz to 2MHz Temperature: −40°C to 25°C R1116x151x R1116x281x VIN=1.52V to 6.5V, CIN=COUT=1.0μF 100 VIN=2.82V to 6.5V 100 Topt=85°C Topt=85°C 10 ESR(Ω) ESR(Ω) 10 Topt=-40°C 1 0.1 Topt=-40°C 1 0.1 0.01 0.01 0 30 60 90 120 Output Current IOUT(mA) 150 0 30 60 90 120 Output Current IOUT(mA) 150 R1116x401x VIN=4.02V to 6.5V 100 Topt=85°C ESR(Ω) 10 Topt=-40°C 1 0.1 0.01 0 30 60 90 120 Output Current IOUT(mA) 150 21 1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to Ricoh sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written consent of Ricoh. 3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise taking out of your country the products or the technical information described herein. 4. The technical information described in this document shows typical characteristics of and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under Ricoh's or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and transportation equipment, combustion equipment, safety devices, life support system etc.) should first contact us. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. Anti-radiation design is not implemented in the products described in this document. 8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 10. There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact Ricoh sales or our distributor before attempting to use AOI. 11. Please contact Ricoh sales representatives should you have any questions or comments concerning the products or the technical information. Halogen Free Ricoh is committed to reducing the environmental loading materials in electrical devices with a view to contributing to the protection of human health and the environment. Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since April 1, 2012. https://www.e-devices.ricoh.co.jp/en/ Sales & Support Offices Ricoh Electronic Devices Co., Ltd. Shin-Yokohama Office (International Sales) 2-3, Shin-Yokohama 3-chome, Kohoku-ku, Yokohama-shi, Kanagawa, 222-8530, Japan Phone: +81-50-3814-7687 Fax: +81-45-474-0074 Ricoh Americas Holdings, Inc. 675 Campbell Technology Parkway, Suite 200 Campbell, CA 95008, U.S.A. Phone: +1-408-610-3105 Ricoh Europe (Netherlands) B.V. Semiconductor Support Centre Prof. W.H. Keesomlaan 1, 1183 DJ Amstelveen, The Netherlands Phone: +31-20-5474-309 Ricoh International B.V. - German Branch Semiconductor Sales and Support Centre Oberrather Strasse 6, 40472 Düsseldorf, Germany Phone: +49-211-6546-0 Ricoh Electronic Devices Korea Co., Ltd. 3F, Haesung Bldg, 504, Teheran-ro, Gangnam-gu, Seoul, 135-725, Korea Phone: +82-2-2135-5700 Fax: +82-2-2051-5713 Ricoh Electronic Devices Shanghai Co., Ltd. Room 403, No.2 Building, No.690 Bibo Road, Pu Dong New District, Shanghai 201203, People's Republic of China Phone: +86-21-5027-3200 Fax: +86-21-5027-3299 Ricoh Electronic Devices Shanghai Co., Ltd. Shenzhen Branch 1205, Block D(Jinlong Building), Kingkey 100, Hongbao Road, Luohu District, Shenzhen, China Phone: +86-755-8348-7600 Ext 225 Ricoh Electronic Devices Co., Ltd. Taipei office Room 109, 10F-1, No.51, Hengyang Rd., Taipei City, Taiwan (R.O.C.) Phone: +886-2-2313-1621/1622 Fax: +886-2-2313-1623
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