R1121N301B-TR-FE

R1121N SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-058-111026 OUTLINE The R1121N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs perform with low dropout voltage and a chip enable function. The line transient response and load transient response of the R1121N Series are excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment. The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5 (Mini-mold) package , high density mounting of the ICs on boards is possible. FEATURES • • • • • • • • Supply Current ................................................................ Typ. 35μA Standby Mode ................................................................. Typ. 0.1μA Dropout Voltage .............................................................. Typ. 0.2V (IOUT=100mA) Ripple Rejection.............................................................. Typ. 70dB(f=1kHz) Temperature-Drift Coefficient of Output Voltage ............. Typ. ±100ppm/°C Line Regulation ............................................................... Typ. 0.05%/V Output Voltage Accuracy................................................. ±2.0% Output Voltage Range..................................................... 1.5V to 5.0V (0.1V steps) (For other voltages, please refer to MARK INFORMATIONS.) • Package ........................................................................ SOT-23-5 (Mini-mold) • Built-in chip enable circuit ( 2 types; A: active “L”, B: active “H”) • Pin-out............................................................................. Similar to the TK112,TK111 APPLICATIONS • Power source for cellular phones such as GSM, CDMA and various kinds of PCSs. • Power source for domestic appliances such as cameras, VCRs and camcorders. • Power source for battery-powered equipment. 1 R1121N BLOCK DIAGRAM R1121Nxx1A R1121Nxx1B 3 1 3 VOUT VDD Vref VOUT Vref Current Limit CE 1 VDD GND 4 2 CE Current Limit GND 4 2 SELECTION GUIDE The output voltage, the active type for the ICs can be selected at the user's request. Product Name R1121Nxx1∗-TR-FE Package Quantity per Reel Pb Free Halogen Free SOT-23-5 3,000 pcs Yes Yes xx : The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps. (For other voltages, please refer to MARK INFORMATIONS.) ∗ : Designation of Active Type. (A) "L" active (B) "H" active 2 R1121N PIN CONFIGURATION SOT-23-5 5 4 (mark side) 1 2 3 PIN DESCRIPTION Pin No Symbol Description 1 VOUT Output pin 2 GND Ground Pin 3 VDD 4 CE or CE Chip Enable Pin 5 NC No Connection Input Pin ABSOLUTE MAXIMUM RATINGS Symbol Item Rating Unit 9.0 V VIN Input Voltage VCE Input Voltage( CE or CE Pin) -0.3 ~ VIN+0.3 V VOUT Output Voltage -0.3 ~ VIN+0.3 V IOUT Output Current 200 mA 420 mW ∗ PD Power Dissipation (SOT-23-5) Topt Operating Temperature Range -40 ~ 85 °C Tstg Storage Temperature Range -55 ~ 125 °C ∗) For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. 3 R1121N ELECTRICAL CHARACTERISTICS • R1121Nxx1A Symbol Topt=25°C Item VOUT Output Voltage IOUT Output Current Conditions VIN = Set VOUT + 1V 1mA < = IOUT < = 30mA Min. Typ. VOUT ×0.98 Max. Unit VOUT ×1.02 V Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT + 1V 1mA < = IOUT < = 80mA ΔVOUT/ΔIOUT Load Regulation VDIF Dropout Voltage ISS Supply Current VIN = Set VOUT + 1V 35 70 μA Supply Current (Standby) VIN = VCE = Set VOUT + 1V 0.1 1.0 μA ΔVOUT/ΔVIN Line Regulation Set VOUT+0.5V < = VIN < = 8.0V IOUT = 30mA 0.05 0.20 %/V RR Ripple Rejection f = 1kHz, Ripple 0.5Vp-p VIN = Set VOUT + 1V VIN Input Voltage Istandby ΔVOUT/ ΔTopt 12 70 2.0 IOUT = 30mA −40°C < = Topt < = 85°C ISC Short Current Limit VOUT = 0V RPU CE Pull-up Resistance 2.5 VCEH CE Input Voltage “H” VCEL CE Input Voltage “L” Output Noise mV Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Output Voltage Temperature Coefficient en 40 BW=10Hz to 100kHz dB 8.0 V ±100 ppm/°C 50 mA 5.0 10.0 MΩ 1.5 VIN V 0.00 0.25 V 30 μVrms RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 4 R1121N • R1121Nxx1B Symbol Topt=25°C Item VOUT Output Voltage IOUT Output Current ΔVOUT/ΔIOUT Load Regulation VDIF Dropout Voltage ISS Supply Current Istandby Supply Current (Standby) ΔVOUT/ΔVIN Line Regulation RR Ripple Rejection VIN Input Voltage ΔVOUT/ ΔTopt Conditions VIN = Set VOUT + 1V 1mA < = IOUT < = 30mA Min. VIN = Set VOUT + 1V 1mA < = IOUT < = 80mA 12 Unit VOUT ×1.02 V 40 mV Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT + 1V VIN = Set VOUT + 1V VCE =GND Set VOUT + 0.5V < = VIN < = 8.0V IOUT = 30mA f = 1kHz, Ripple 0.5Vp-p VIN = Set VOUT + 1V 35 70 μA 0.1 1.0 μA 0.05 0.20 %/V 70 2.0 IOUT = 30mA −40°C < = Topt < = 85°C ISC Short Current Limit VOUT = 0V RPD CE Pull-down Resistance 2.5 VCEH CE Input Voltage “H” VCEL CE Input Voltage “L” Output Noise Max. Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Output Voltage Temperature Coefficient en Typ. VOUT ×0.98 BW=10Hz to 100kHz dB 8.0 V ±100 ppm/°C 50 mA 10.0 MΩ 1.5 VIN V 0.00 0.25 V 5.0 30 μVrms RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 5 R1121N ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Topt = 25°C Output Current IOUT (mA) Condition Output Voltage VOUT (V) 1.5 1.8 < = < = VOUT VOUT < = < = 1.7 5.0 Min. 100 150 VIN - VOUT = 1.0V Topt = 25°C Output Voltage VOUT (V) Condition 1.5 1.6 1.7 1.8 < = 2.0 < = 2.5 < = 2.8 < = 3.4 < = VOUT VOUT VOUT VOUT VOUT < = < = < = < = < = 1.9 2.4 2.7 3.3 5.0 Dropout Voltage VDIF (V) Min. 0.50 0.40 0.30 IOUT = 100mA Typ. Max. 0.60 0.35 0.24 0.20 0.17 1.40 0.70 0.35 0.30 0.26 Note : When set Output Voltage is equal or less than 2.0V, VIN should be equal or more than 2.0V. OPERATION R1121Nxx1A 1 R1121Nxx1B 5 1 VOUT VDD 5 VOUT VDD R1 R1 Vref CE 3 Vref Current Limit R2 GND 2 CE 3 Current Limit R2 GND 2 In these ICs, fluctuation of output voltage, VOUT is detected by feed-back registers R1, R2, and the result is compared with a reference voltage by the error amplifier, so that a constant voltage is output. A current limit circuit for protection in short mode and a chip enable circuit, are included. 6 R1121N TEST CIRCUITS CE CE 4 4 VDD 3 IN VOUT R1121Nxx1B Series 1 VOUT VDD 3 IN OUT R1121Nxx1B Series OUT 1 ISS IOUT 2.2μF 2 2.2μF 2 0.1μF GND 0.1μF GND Supply current Test Circuit Standard test Circuit Fig.1 Standard test Circuit Fig.2 Supply Current Test Circuit CE CE 4 4 IN VDD 3 VOUT R1121Nxx1B Series OUT 1 IN IOUT P.G VDD 3 VOUT R1121Nxx1B Series OUT 1 2 2 GND 1μF Ripple Rejection, Line Transient Response Test Circuit Fig.3 Ripple Rejection, Line Transient Response Test Circuit GND I1 I2 Load Transient Response Test Circuit Fig.4 Load Transient Response Test Circuit 7 R1121N TYPICAL CHARACTERISTICS 1) Output Voltage vs. Output Current R1121N181B R1121N301B Topt = 25°C Topt = 25°C 2.0 3.5 5.0V 3.0 3.8V 1.6 2.8V Output Voltage VOUT (V) Output Voltage VOUT (V) 1.8 1.4 1.2 2.3V 1.0 0.8 0.6 VIN = 2.1V 0.4 4.0V 2.5 2.0 3.5V 1.5 VIN = 3.3V 1.0 0.5 0.2 0.0 0.0 0 100 200 300 400 Output Current IOUT (mA) 500 0 100 R1121N401B 200 300 400 Output Current IOUT (mA) 500 R1121N501B Topt = 25°C Topt = 25°C 6.0 5.0 5.0 4.0 6.0V 3.5 Output Voltage (V) Output Voltage VOUT (V) 4.5 5.0V 3.0 2.5 4.5V 2.0 VIN = 4.3V 1.5 7.0V 4.0 6.0V 3.0 5.5V 2.0 VIN = 5.3V 1.0 1.0 0.5 0.0 0.0 0 100 200 300 400 Output Current IOUT (mA) 0 500 100 200 300 400 Output Current IOUT (mA) 500 2) Output Voltage vs. Input Voltage R1121N181B R1121N301B Topt = 25°C Topt = 25°C 3.1 2.0 IOUT=1mA 3.0 IOUT = 1mA Output Voltage VOUT (V) Output Voltage VOUT (V) 1.9 1.8 1.7 1.6 1.5 1.4 30mA 2.9 2.8 2.7 30mA 2.6 1.3 50mA 1.2 1.0 8 2.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 2.5 2.0 50mA 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 R1121N R1121N401B R1121N501B Topt = 25°C Topt = 25°C 4.5 5.5 5.0 Output Voltage VOUT (V) Output Voltage VOUT (V) IOUT = 1mA 4.0 3.5 30mA 3.0 3.0 4.0 3.5 30mA 3.0 50mA 2.5 2.0 IOUT = 1mA 4.5 50mA 4.0 5.0 6.0 Intput Voltage VIN (V) 7.0 2.5 2.0 8.0 3.0 4.0 5.0 6.0 Intput Voltage VIN (V) 7.0 8.0 3) Dropout Voltage vs. Output Current R1121N181B R1121N301B 1.20 0.40 0.35 Topt = 85°C 0.80 0.60 25°C 0.40 -40°C Dropout Voltage VDIF (V) Dropout Voltage VDIF (V) 1.00 0.20 Topt = 85°C 0.30 25°C 0.25 0.20 -40°C 0.15 0.10 0.05 0.00 0.00 0 50 100 Output Current IOUT (mA) 150 0 0.40 0.35 0.35 0.30 Topt = 85°C 0.25 25°C 0.20 0.15 -40°C 0.10 150 R1121N501B 0.40 0.05 Dropout Voltage VDIF (V) Dropout Voltage VDIF (V) R1121N401B 50 100 Output Current IOUT (mA) 0.30 Topt = 85°C 0.25 25°C 0.20 0.15 -40°C 0.10 0.05 0.00 0.00 0 50 100 Output Current IOUT (mA) 150 0 50 100 Output Current IOUT (mA) 150 9 R1121N 4) Output Voltage vs. Temperature R1121N181B 1.90 1.88 3.08 1.86 3.06 1.84 1.82 1.80 1.78 1.76 1.74 3.04 3.02 3.00 2.98 2.96 2.94 2.92 1.72 1.70 -50 VIN = 4.0V IOUT = 30mA 3.10 Output Voltage VOUT (V) Output Voltage VOUT (V) R1121N301B VIN = 2.8V IOUT = 30mA -25 0 25 50 Temperature Topt (°C) 75 2.90 -50 100 -25 R1121N401B 100 VIN = 6.0V IOUT = 30mA 5.10 4.08 5.08 4.06 5.06 Output Voltage VOUT (V) Output Voltage VOUT (V) 75 R1121N501B VIN = 5.0V IOUT = 30mA 4.10 4.04 4.02 4.00 3.98 3.96 3.94 5.04 5.02 5.00 4.98 4.96 4.94 4.92 3.92 3.90 -50 0 25 50 Temperature Topt (°C) -25 0 25 50 Temperature Topt (°C) 75 4.90 -50 100 -25 0 25 50 Temperature Topt (°C) 75 100 5) Supply Current vs. Input Voltage R1121N181B R1121N301B Topt = 25°C 60 60 50 50 Supply Current I ISS (μA) Supply Current I ISS (μA) Topt = 25°C 40 30 20 10 30 20 10 10 0 1.0 40 2.0 4.0 5.0 6.0 3.0 Input Voltage VIN (V) 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 Input Voltage VIN (V) 7.0 8.0 R1121N R1121N401B R1121N501B Topt = 25°C 60 60 50 50 Supply Current ISS (μA) Supply Current ISS (μA) Topt = 25°C 40 30 20 10 0 1.0 40 30 20 10 2.0 4.0 5.0 6.0 3.0 Intput Voltage VIN (V) 7.0 0 1.0 8.0 2.0 3.0 4.0 5.0 6.0 Intput Voltage VIN (V) 7.0 8.0 6) Supply Current vs. Temperature R1121N181B R1121N301B VIN = 2.8V 50 50 45 45 Supply Current ISS (μA) Supply Current ISS (μA) VIN = 2.8V 40 35 30 25 20 -50 40 35 30 25 0 50 Temperature Topt (°C) 20 -50 100 R1121N401B VIN = 6.0V 50 50 45 45 Supply Current ISS (μA) Supply Current ISS (μA) 100 R1121N501B VIN = 5.0V 40 35 30 25 20 -50 0 50 Temperature Topt (°C) 40 35 30 25 0 50 Temperature Topt (°C) 100 20 -50 0 50 Temperature Topt (°C) 100 11 R1121N 7) Dropout Voltage vs. Set Output Voltage R1121Nxx1B Topt = 25 1.0 Dropout Voltage VDIF (V) 0.9 IOUT IOUT IOUT IOUT IOUT 0.8 0.7 0.6 = = = = = 150mA 100mA 50mA 30mA 10mA 0.5 0.4 0.3 0.2 0.1 0.0 1.0 2.0 3.0 4.0 Set Output Voltage Vreg (V) 5.0 8) Ripple Rejection vs. Frequency R1121N181B R1121N181B VIN = 2.8VDC + 0.5Vp-p COUT = tantal 2.2μF VIN = 2.8VDC + 0.5Vp-p COUT = tantal 1.0μF 80 80 70 Ripple Rejection RR (dB) Ripple Rejection RR (dB) 70 60 50 40 IOUT = 1mA 30 IOUT = 30mA 20 IOUT = 50mA 10 60 50 40 IOUT= 1mA 30 IOUT = 30mA 20 IOUT = 50mA 10 0 0 0.1 1 10 Frequency f (kHz) 0.1 100 1 R1121N301B VIN = 4.0VDC + 0.5Vp-p COUT = tantal 2.2μF 80 80 70 Ripple Rejection RR (dB) 70 Ripple Rejection RR (dB) 100 R1121N301B VIN = 4.0VDC + 0.5Vp-p COUT = tantal 1.0μF 60 50 40 IOUT = 1mA 30 IOUT = 30mA 20 IOUT = 50mA 10 60 50 40 IOUT = 1mA 30 IOUT = 30mA 20 IOUT = 50mA 10 0 0 0.1 12 10 Frequency f (kHz) 1 10 Frequency f (kHz) 100 0.1 1 10 Frequency f (kHz) 100 R1121N R1121N401B R1121N401B VIN = 5.0VDC + 0.5Vp-p COUT = tantal 2.2μF 80 80 70 70 Ripple Rejection RR (dB) Ripple Rejection RR (dB) VIN = 5.0VDC + 0.5Vp-p COUT = tantal 1.0μF 60 50 IOUT= 1mA 40 30 IOUT = 30mA 20 IOUT = 50mA 10 60 50 40 IOUT = 1mA 30 IOUT = 30mA 20 IOUT = 50mA 10 0 0 0.1 1 10 Frequency f (kHz) 0.1 100 1 10 100 Frequency f (kHz) 9) Ripple Rejection vs. Input Voltage (DC bias) R1121N301B R1121N301B IOUT = 10mA COUT = 2.2μF IOUT = 1mA COUT = 2.2μF 80 80 70 Ripple Rejection RR (dB) Ripple Rejection RR (dB) 70 60 50 40 f = 400Hz 30 20 f = 1kHz 10 f = 10kHz 60 50 40 f = 400Hz 30 20 f = 1kHz 10 f = 10kHz 0 0 3.1 3.2 3.3 3.4 Input Voltage VIN (V) 3.5 3.1 3.2 3.3 3.4 Input Voltage VIN (V) 3.5 R1121N301B IOUT = 50mA COUT = 2.2μF 80 f = 400Hz Ripple Rejection RR (dB) 70 f = 1kHz 60 50 f = 10kHz 40 30 20 10 0 3.1 3.2 3.3 3.4 3.5 Input Voltage VIN (V) 13 R1121N 10) LineTransient Response R1121N301B IOUT=30mA tr=tf=5 μs COUT=Tantalum 1.0μF OUtput Voltage VOUT (V) 3.3 5 Input Voltage 4 3.2 3.1 3 Output Voltage 3.0 2 2.9 1 Input Voltage VIN (V) 6 3.4 0 2.8 0 20 40 60 TIme t (μs) 80 100 120 R1121N301B IOUT=30mA tr=tf=5 μs COUT=Tantalum 2.2μF Output Voltage VOUT (V) 3.3 5 Input Voltage 4 3.2 3.1 3 Output Voltage 3.0 2 2.9 1 Input Voltage VIN (V) 6 3.4 0 2.8 0 20 40 60 Time t (μs) 80 100 120 R1121N301B IOUT=30mA tr=tf=5 μs COUT=Tantalum 6.8μF Output Voltage VOUT (V) 3.3 5 Input Voltage 4 3.2 3 3.1 Output Voltage 3.0 2 2.9 1 0 2.8 0 14 20 40 60 Time t (μs) 80 100 120 Input Voltage VIN (V) 6 3.4 R1121N 11) Load Transient Response R1121N301B VIN=4V CIN=Tantalum 1μF COUT=Tantalum 1.0μF Output Voltage VOUT (V) 3.3 100 Output Current 50 3.2 0 3.1 Output Voltage 3.0 -50 2.9 -100 Output Current IOUT (mA) 150 3.4 -150 2.8 0 2 4 6 8 10 12 Time t (μs) 14 16 18 20 R1121N301B VIN=4V CIN=Tantalum 1μF COUT=Tantalum 2.2μF Output Voltage VOUT (V) 3.3 100 Output Current 50 3.2 0 3.1 Output Voltage 3.0 -50 2.9 -100 Output Current IOUT (mA) 150 3.4 -150 2.8 0 2 4 6 8 10 12 Time t (μs) 14 16 18 20 R1121N301B VIN=4V CIN=Tantalum 1μF COUT=Tantalum 6.8μF Output Voltage VOUT (V) 3.3 100 Output Current 50 3.2 0 3.1 Output Voltage 3.0 -50 2.9 -100 Output Current IOUT (mA) 150 3.4 -150 2.8 0 2 4 6 8 10 12 Time t (μs) 14 16 18 20 15 R1121N TECHNICAL NOTES When using these ICs, be sure to consider the following points: In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance) in the range described as follows: 4 CE 1 Vout R1121N301B 3 Vin Vin 2 GND Ceramic Capacitor Spectrum S.A. Analyzer ESR Iout Ceramic Capacitor 1μF Measuring Circuit for white noise; R1121N301B The relationship between IOUT (output current) and ESR of output capacitor is shown in the graphs below. The conditions when the white noise level is under 40mV (Avg.) are indicated by the hatched area in the graph. (note: When the additional ceramic capacitors are connected to the output pin with output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as the same external components as the ones to be used on the PCB.) (1) VIN=4V (2) Frequency Band: 10Hz to 1MHz (3) Temperature: 25°C R1121N301B R1121N301B Ceramic 2.2μF Ceramic 1.0μF 100.0 10.0 10.0 ESR (Ω) ESR (Ω) 100.0 1.0 1.0 0.1 0 50 100 Output Current IOUT (mA) 16 150 0.1 0 50 100 Output Current IOUT (mA) 150 R1121N ·Make VDD and GND lines sufficient. If their impedance is high, noise pick up or incorrect operation may result. ·Connect the capacitor with a capacitance of 1μF or more between VDD and GND as close as possible. ·Set external components, especially the output capacitor, as close as possible to the ICs and make wiring as short as possible. TYPICAL APPLICATION CE CE IN Cap. VDD R1121Nxx1A VOUT GND OUT Cap. IN Cap. VDD R1121Nxx1B VOUT GND OUT Cap. 17 1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. 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