R1122N301A-TL

R1122N301A-TL

  • 厂商:

    RICOH

  • 封装:

  • 描述:

    R1122N301A-TL - LOW NOISE 150mA LDO REGULATOR   - RICOH electronics devices division

  • 详情介绍
  • 数据手册
  • 价格&库存
R1122N301A-TL 数据手册
2000. 3.13 LOW NOISE 150mA LDO REGULATOR R1122N SERIES n OUTLINE The R1122N Series are voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ONresistance and high ripple rejection by CMOS process. Each of these voltage regulator ICs consists of a voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs perform with low dropout voltage and a chip enable function. The line transient response and load transient response of the R1122N Series are excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment. The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs are SOT-23-5 (Mini-mold) package, high density mounting of the ICs on boards is possible. n FEATURES l l l l l l l l l l l l l Ultra-Low Supply Current.................................................TYP. 100mA Standby Mode ...................................................................TYP. 0.1mA Low Dropout Voltage ........................................................TYP. 0.19V (IOUT = 100mA, 3V Output type) High Ripple Rejection .......................................................TYP. 80dB (f = 1kHz) Low Temperature-Drift Coefficient of Output Voltage .....TYP. ±100ppm/°C Excellent Line Regulation .................................................TYP. 0.05%/V High Accuracy Output Voltage..........................................±2.0% Small Package ..................................................................SOT-23-5 (Mini-mold) Output Voltage ..................................................................Stepwise setting with a step of 0.1V in the range of 1.5V to 5.0V is possible. Built-in chip enable circuit (2 Types; A: active “L”, B: active “H”) Built-in Fold-back protection circuit .................................Short Current Typ. 30mA Pinout ................................................................................Similar to the TK112, TK111 Ceramic Capacitors are Recommendable to be used with this IC. n APPLICATIONS l l l Power source for cellular phones such as GSM, CDMA, PCS and so forth. Power source for domestic appliances such as cameras, VCRs and camcorders. Power source for battery-powered equipment. Rev. 1.10 -1- n BLOCK DIAGRAM R1122NXX1A R1122NXX1B 3 VDD 1 VOUT 3 VDD 1 VOUT Vref CE 4 Current Limit GND 2 CE 4 Vref Current Limit GND 2 n SELECTION GUIDE The output voltage, the active type, the packing type, and the taping type for the ICs can be selected at the user's request. The selection can be made by designating the part number as shown below : R1122NXX1X-XX -- ab c Code a b c ¬Part Number Contents Setting Output Voltage (VOUT) : Stepwise setting with a step of 0.1V in the range of 1.5V to 5.0V is possible. Designation of Active Type : A : active “L” type B : active “H” type Designation of Taping Type : Ex. TR, TL (refer to Taping Specifications; TR type is the standard direction.) Rev. 1.10 -2- n PIN CONFIGURATION SOT-23-5 5 4 NC (mark side) VOUT GND CE VDD 1 2 3 n PIN DESCRIPTION Pin No. 1 2 3 4 5 Symbol VOUT GND VDD CE or CE NC Description Output pin Ground Pin Input Pin Chip Enable Pin No Connection Rev. 1.10 -3- n ABSOLUTE MAXIMUM RATINGS Symbol VIN VCE VOUT IOUT PD Topt Tstg Item Input Voltage Input Voltage (CE or CE Pin) Output Voltage Output Current Power Dissipation Operating Temperature Range Storage Temperature Range Rating 7.0 -0.3 ~ VIN+0.3 -0.3~ VIN+0.3 200 250 -40 ~ 85 -55 ~ 125 Unit V V V mA mW °C °C n ELECTRICAL CHARACTERISTICS l R1122NXX1A Symbol VOUT IOUT DVOUT/DIOUT VDIF ISS Istandby DVOUT/DVIN RR VIN DVOUT/DT Ilim RPU VCEH VCEL en Item Conditions MIN. TYP. VIN = Set VOUT+1V VOUT 1mA £ IOUT £ 30mA ´0.98 VIN = Set VOUT+1V 150 mA When VOUT = Set VOUT-0.1V VIN = Set VOUT+1V 12 40 mV 1mA £ IOUT £ 80mA refer to the ELECTICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT+1V 100 170 mA VIN = VCE = Set VOUT+1V 0.1 1.0 mA Set VOUT+0.5V £ VIN £ 8V 0.05 0.20 %/V IOUT = 30mA f = 1KHz, Ripple 0.5Vp-p 80 dB VIN = Set VOUT+1V 2.0 6.0 V ppm IOUT = 30mA ±100 -40°C £ Topt £ 85°C /°C VOUT = 0V 30 mA 2.5 5 10 MW 1.5 VIN V 0 0.25 V BW = 10Hz ~ 100kHz 30 mVrms Topt = 25°C MAX. Unit VOUT V ´1.02 Output Voltage Output Current Load Regulation Dropout Voltage Supply Current Supply Current (Standby) Line Regulation Ripple Rejection Input Voltage Output Voltage Temperature Coefficient Short Current Limit CE Pull-up Resistance CE Input Voltage “H” CE Input Voltage “L” Output Noise Rev. 1.10 -4- l R1122NXX1B Symbol VOUT IOUT DVOUT/DIOUT VDIF ISS Istandby DVOUT/DVIN RR VIN DVOUT/DT Ilim RPD VCEH VCEL en Item Output Voltage Output Current Load Regulation Dropout Voltage Supply Current Supply Current (Standby) Line Regulation Ripple Rejection Input Voltage Output Voltage Temperature Coefficient Short Current Limit CE Pull-down Resistance CE Input Voltage “H” CE Input Voltage “L” Output Noise Conditions MIN. TYP. VIN = Set VOUT+1V VOUT 1mA £ IOUT £ 30mA ´0.98 VIN = Set VOUT+1V 150 mA When VOUT = Set VOUT-0.1V VIN = Set VOUT+1V 12 40 mV 1mA £ IOUT £ 80mA refer to the ELECTICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN = Set VOUT+1V 100 170 mA VIN = Set VOUT+1V 0.1 1.0 mA VCE = GND Set VOUT+0.5V £ VIN £ 8V 0.05 0.20 %/V IOUT = 30mA f = 1KHz, Ripple 0.5Vp-p 80 dB VIN = Set VOUT+1V 2.0 6.0 V ppm IOUT = 30mA ±100 /°C -40°C £ Topt £ 85°C VOUT = 0V 30 mA 2.5 5 10 MW 1.5 VIN V 0 0.25 V BW = 10Hz ~ 100kHz 30 mVrms Topt=25°C MAX. Unit VOUT V ´1.02 l ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Output Voltage VOUT (V) 1.5 £ VOUT £ 1.6 1.7 £ VOUT £ 1.8 1.9 £ VOUT £ 2.3 2.4 £ VOUT £ 2.7 2.8 £ VOUT £ 5.0 Topt = 25°C Dropout Voltage VDIF (V) Conditions TYP. MAX. 0.32 0.55 0.28 0.47 IOUT = 100mA 0.25 0.35 0.20 0.29 0.19 0.26 Rev. 1.10 -5- n OPERATION R1122XX1A R1122XX1B 3 VDD 1 VOUT 3 VDD 1 VOUT R1 Vref CE 4 Current Limit R2 GND CE 4 Vref Current Limit R1 R2 GND 2 2 In these ICs, fluctuation of Output Voltage, VOUT is detected by Feed-back Registers, R1 and R2, and the result is compared with a reference voltage by Error Amplifier, so that a constant voltage is output. A current limit circuit for protection at short mode, and a chip enable circuit are included. Rev. 1.10 -6- n TEST CIRCUITS CE 4 4 CE IN VDD 3 VOUT R1122Nxx1B R1121Nxx1B Series Series 1 OUT IOUT 2.2µF IN ISS VDD 3 VOUT R1122Nxx1B R1121Nxx1B Series Series 1 OUT 2 0.1µF 2.2mF GND 2 0.1µF 2.2mF GND 2.2µF Fig.1 Standard test Circuit Fig.2 Supply Current Test Circuit CE 4 CE 4 IN VDD 3 R1122Nxx1B R1121Nxx1B Series Series VOUT 1 OUT IOUT IN VDD 3 R1122Nxx1B R1121Nxx1B Series Series VOUT 1 OUT P.G 2 GND 2 1µF 2.2mF GND I1 I2 Fig.3 Ripple Rejection, Line Transient Response Test Circuit Fig.4 Load Transient Response Test Circuit Rev. 1.10 -7- n TECHNICAL NOTES When using these ICs, consider the following points: Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance). (note: When the additional ceramic capacitors are connected to the Output Pin with Output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) Recommended Capacitors; GRM40X5R225K6.3 (Murata) GRM40-034X5R335K6.3 (Murata) GRM40-034X5R475K6.3 (Murata) PCB Layout Make VDD and GND line sufficient. When the impedance of these is high, it would be a cause of picking up the noise or unstable operation. Connect a capacitor with a capacitance of 2.2mF or more between VDD and GND pin as close as possible. Set external components, especially output capacitor as close as possible to the ICs and make wiring shortest. Rev. 1.10 -8- n TYPICAL APPLICATION CE CE IN VDD R1122Nxx1A Series R1111NXX1A VOUT OUT IN R1122Nxx1B VDD Series R1111Nxx1B VOUT OUT Cap. GND Cap. Cap. GND Cap. (External Components) Output Capacitor; Ceramic 2.2mF(Set Output Voltage in the range from 2.5 to 5.0V) Ceramic 4.7mF (Set Output Voltage in the range from 1.5 to 2.5V) Input Capacitor; Ceramic 2.2mF Rev. 1.10 -9- n TYPICAL CHARACTERISTICS 1) Output Voltage vs. Output Current R11x2N151B 1.8 1.6 Output Voltage Vout[V] 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 100 200 300 400 500 Output Current Iout[mA] VIN=2.0V VIN=2.5V VIN=3.5V R11x2N201B 2.5 Output Voltage Vout[V] 2 VIN=2.3V VIN=2.5V VIN=3.0V VIN=4.0V 1.5 1 0.5 0 0 100 200 300 400 Output Current Iout[mA] 500 R11x2N301B 3.5 Output Voltage Vout[V] Output Voltage Vout[V] 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 Output Current Iout[mA] R11x2N501B 500 0 0 100 VIN=3.3V VIN=3.5V VIN=4.0V VIN=5.0V R11x2N401B 5 4 3 2 1 VIN=4.3V VIN=4.5V VIN=5.0V VIN=6.0V 200 300 400 Output Current Iout[mA] 500 6 Output Voltage Vout[V] 5 4 3 2 1 0 0 100 200 300 400 Output Current Iout[mA] 500 VIN=5.3V VIN=5.5V VIN=6.0V VIN=7.0V Rev. 1.10 - 10 - 2) Output Voltage vs. Input Voltage R11x2N151B 1.600 1.500 Output Voltage VOUT[V] 1.400 1.300 1.200 Iout=1mA R11x2N201B 2.100 2.000 1.900 1.800 1.700 Iout=1mA Output Voltage VOUT[V] 1.100 1.000 1 2 3 4 5 Iout=30mA Iout=50mA 1.600 1.500 Iout=30mA Iout=50mA 6 7 1 2 3 4 5 6 7 Input Voltage VIN[V] Input Voltage VIN[V] R11x2N401B 4.500 R11x2N301B 3.100 3.000 Output Voltage VOUT[V] 2.900 2.800 2.700 Iout=1mA Output Voltage VOUT[V] 4.000 3.500 3.000 Iout=1mA Iout=30mA Iout=50mA 2.600 2.500 2 3 4 5 Iout=30mA Iout=50mA 2.500 6 7 2 3 4 5 6 7 Input Voltage VIN[V] Input Voltage VIN[V] R11x2N501B 5.500 5.000 4.500 4.000 3.500 Iout=1mA Output Voltage VOUT[V] 3.000 2.500 2 3 4 5 Iout=30mA Iout=50mA 6 7 Input Voltage VIN[V] Rev. 1.10 - 11 - 3) Dropout Voltage vs. Output Current R11x2N151B 0.600 0.500 0.400 0.300 0.200 0.100 0.000 0 50 100 150 Output Current IOUT[mA] R11x2N301B 0.600 0.500 0.400 0.300 0.200 0.100 0.000 0 50 100 150 Output Current IOUT[mA] R11x2N501B 0.600 Dropout Voltage VDIF[V] 0.500 R11x2N201B 0.600 Dropout Voltage VDIF [V] Topt=25°C Topt=85°C Dropout Voltage VDIF [V] Topt=-40°C 0.500 0.400 0.300 0.200 0.100 0.000 0 Topt=-40°C Topt=25°C Topt=85°C 50 100 Output Current IOUT[mA] 150 R11x2N401B 0.600 Dropout Voltage VDIF[V] Topt=25°C Topt=85°C Dropout Voltage VDIF[V] Topt=-40°C 0.500 0.400 0.300 0.200 0.100 0.000 0 Topt=-40°C Topt=25°C Topt=85°C 50 100 Output Current IOUT[mA] 150 Topt=-40°C 0.400 0.300 0.200 0.100 0.000 0 50 100 150 Output Current IOUT[mA] Topt=25°C Topt=85°C Rev. 1.10 - 12 - 4) Output Voltage vs. Temperature VIN=2.5V CIN=1mF VIN=3.0V CIN=1mF 1.53 R11x2N151A/B COUT=2.2mFIOUT=30mA 2.10 2.08 2.06 2.04 2.02 2.00 1.98 1.96 1.94 1.92 1.90 -50 -25 R11x2N201B Output Voltage VOUT[V] COUT=2.2mF IOUT=30mA Output Voltage VOUT(V) 1.52 1.51 1.50 1.49 1.48 1.47 -50 -25 Temperature Topt(°C) R11x2N301A/B 0 25 50 75 100 0 25 50 75 100 Temperature Topt (°C) R11x2N401A/B 4.08 VIN=5.0V CIN=1mF COUT=2.2mF VIN=4.0V CIN=1mF COUT=2.2mF 3.06 IOUT=30mA Output Voltage V OUT(V) IOUT=30mA Output Voltage V OUT(V) 3.04 3.02 3.00 2.98 2.96 2.94 -50 -25 0 25 50 75 100 4.06 4.04 4.02 4.00 3.98 3.96 3.94 3.92 -50 -25 Temperature Topt (°C) Temperature Topt (°C) 0 25 50 75 100 R11x2N501A/B 5.10 5.08 VIN=6.0V CIN=1mF COUT=2.2mF IOUT=30mA Output Voltage VOUT(V) 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 -50 -25 0 25 50 75 100 Temperature Topt(°C) Rev. 1.10 - 13 - 5) Supply Current vs. Input Voltage R11x2N151B 120 100 Supply Current ISS{uA] 80 60 40 20 0 1 2 3 4 5 6 7 Input Voltage VIN[V] R11x2N301B R11x2N201B 120 100 Supply Current ISS{uA] 80 60 40 20 0 1 2 3 4 5 Input Voltage VIN[V] 6 7 R11x2N401B 120 100 Supply Current ISS{uA] Supply Current ISS{uA] 120 100 80 60 40 20 0 80 60 40 20 0 1 2 3 4 5 Input Voltage VIN[V] R11x2N501B 6 7 1 2 3 4 5 6 7 Input Voltage VIN[V] 120 100 Supply Current ISS{uA] 80 60 40 20 0 1 2 3 4 5 Input Voltage VIN[V] 6 7 Rev. 1.10 - 14 - 6) Supply Current vs. Temperature R11x2N151A/B 200 VIN=2.5V CIN=1mF COUT=2.2mF R11x2N201A/B 200 VIN=3.0V CIN=1mF COUT=2.2mF Supply Current Iss(uA) 150 Supply Current Iss(uA) -50 -25 0 25 50 75 Temperature Topt (°C) 100 150 100 50 0 -50 -25 0 25 50 75 100 100 50 0 Temperature Topt(°C) VIN=5.0V CIN=1mF R11x2N301A/B 200 VIN=4.0V CIN=1mF COUT=2.2mF R11x2N401A/B 200 COUT=2.2mF Supply Current Iss(uA) Supply Current Iss(uA) -50 -25 0 25 50 75 100 150 150 100 100 50 50 0 0 -50 -25 0 25 50 75 100 Temperature Topt(°C) VIN=6.0V CIN=1mF Temperature Topt (°C) R11x2N501A/B 200 COUT=2.2mF Supply Current Iss(uA) 150 100 50 0 -50 -25 0 25 50 75 100 ( Temperature Topt °C) Rev. 1.10 - 15 - 7) Ripple Rejection vs. Frequency R11x2N151A/B 90.00 VIN=2.5V+0.5Vp-p COUT=2.2mF IOUT=30mA R11x2N201A/B VIN=3.0V+0.5Vp-p COUT=2.2mF IOUT=30mA 90.00 Ripple Rejection RR [dB] 80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.1 Ripple Rejection RR [dB] 80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.1 1 10 Frequency Freq [kHz] VIN=4.0V+0.5Vp-p 100 1 10 Frequency Freq [kHz] R11x2N401A/B 100 VIN=5.0V+0.5Vp-p COUT=2.2mF IOUT=30mA R11x2N301A/BCOUT=2.2mF IOUT=30mA 90.00 90.00 80.00 Ripple Rejection RR [dB] 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 Ripple Rejection RR [dB] 80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.1 1 10 VIN=6.0V+0.5Vp-p 100 0.1 Frequency Freq [kHz] R11x2N501A/B COUT=2.2mF IOUT=30mA 90.00 80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.1 1 10 100 1 10 Frequency Freq [kHz] 100 Ripple Rejection RR [dB] Frequency Freq [kHz] Rev. 1.10 - 16 - 8) Ripple Rejection vs. Input Voltage (DC bias) R11x2N301B 90.00 80.00 Ripple Rejection RR[dB 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 3.10 3.20 3.30 Input Voltage V IN [V] R11x2N301B f=400Hz f=1kHz f=10kHz COUT =Ceramic 2.2mF IOUT=1mA R11x2N301B COUT =Ceramic 2.2mF 90.00 80.00 Ripple Rejection RR[dB] 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 3.50 IOUT=10mA f=400Hz f=1kHz f=10kHz 3.40 3.10 3.20 3.30 3.40 Input Voltage VIN[V] 3.50 COUT =Ceramic 2.2mF 90.00 80.00 Ripple Rejection RR[dB] 70.00 60.00 50.00 40.00 30.00 IOUT=50mA f=400Hz f=1kHz f=10kHz 20.00 10.00 0.00 3.10 3.20 3.30 Input Voltage VIN[V] 3.40 3.50 9) Input Transient Response R11X2N151B Topt=25°C VIN VOUT VIN=2.5V3.5V IOUT=30mA CIN =none COUT=2.2mF tr/tf=5ms Rev. 1.10 - 17 - R11X2N201B Topt=25°C VIN VOUT VIN=3.0V4.0V IOUT=30mA CIN =none COUT=2.2mF tr/tf=5ms R11X2N301B Topt=25°C VIN VOUT VIN=4.0V5.0V IOUT=30mA CIN =none COUT=2.2mF tr/tf=5ms R11X2N401B Topt=25°C VIN VOUT VIN=5.0V6.0V IOUT=30mA CIN =none COUT=2.2mF tr/tf=5ms Rev. 1.10 - 18 - R11X2N501B Topt=25°C VIN VOUT VIN=6.0V7.0V IOUT=30mA CIN =none COUT=2.2mF tr/tf=5ms 10) Load Transient Response R11X2N151B Topt=25°C IOUT VOUT IOUT=50mA100mA VIN=2.5V CIN=2.2mF COUT=2.2mF tr/tf=5 s R11X2N201B Topt=25°C IOUT VOUT IOUT=50mA100mA VIN=3.0V CIN=2.2mF COUT=2.2mF tr/tf=5ms Rev. 1.10 - 19 - R11X2N301B Topt=25°C IOUT VOUT IOUT=50mA100mA VIN=4.0V CIN=2.2mF COUT=2.2mF tr/tf=5ms R11X2N401B Topt=25°C IOUT VOUT IOUT=50mA100mA VIN=5.0V CIN=2.2mF COUT=2.2mF tr/tf=5ms R11X2N501B Topt=25°C IOUT VOUT IOUT=50mA100mA VIN=6.0V CIN=2.2mF COUT=2.2mF tr/tf=5ms Rev. 1.10 - 20 - n TECHNICAL NOTES When using these ICs, be sure to consider following points: l Make VDD and GND line sufficient. When the impedance of these is high, there is a case to pick up the noise or not to work correctly. l Connect the capacitor with a capacitance as much as 2.2mF between VDD and GND as close as possible. l Set external components, especially Output Capacitor, as close as possible to the ICs and make wiring shortest. In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance) of which is in the range described as follows: 4 CE VOUT 1 R1122NXX1B Ceramic Cap. Ceramic Cap. ESR IOUT Spectrum Analyzer 3 S.A. VDD 2 GND VIN Measuring Circuit for white noise; R1122NXX1B The relations between IOUT (Output Current) and ESR of Output Capacitor are shown below. The conditions when the white noise level is under 40mV(Avg.) are marked as the hatched area in the graph. (note: When the additional ceramic capacitors are connected to the Output Pin with Output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) (1) VIN=VOUT+1V (2) Frequency band :10Hz to 1MHz (3) Temperature : 25°C Rev. 1.10 - 21 - R11X2N151B COUT=2.2uF,CIN=2.2uF 100 100 R11X2N151B COUT=4.7uF,CIN=2.2uF 10 10 ESR[Ohm] ESR[Ohm] 1 1 0.1 0.1 0.01 0 30 60 90 120 150 0.01 0 30 60 90 120 150 IOUT[mA] IOUT[mA] R11X2N301B COUT=2.2uF,CIN=2.2uF 100 100 R11X2N301B COUT=4.7uF,CIN=2.2uF 10 10 ESR[Ohm] ESR[Ohm] 1 1 0.1 0.1 0.01 0 30 60 90 120 150 0.01 0 30 60 90 120 150 IOUT[mA] IOUT[mA] Rev. 1.10 - 22 -
R1122N301A-TL
物料型号: - R1122N系列

器件简介: - R1122N系列是电压调节器IC,采用CMOS工艺制造,具有高输出电压精度、极低的供电电流、低导通电阻和高纹波抑制能力。这些IC由电压参考单元、误差放大器、电阻器、电流限制电路和芯片使能电路组成,具有低下降电压和芯片使能功能。

引脚分配: - SOT-23-5封装 - Pin 1: VOUT(输出引脚) - Pin 2: GND(地引脚) - Pin 3: VDD(输入引脚) - Pin 4: CE或CE(芯片使能引脚) - Pin 5: NC(无连接)

参数特性: - 特点: - 超低供电电流:典型值100pA - 待机模式供电电流:典型值0.1uA - 低下降电压:0.19V(100mA负载,3V输出类型) - 高纹波抑制:典型值80dB(频率1kHz) - 低温度漂移系数:典型值±100ppm/°C - 优秀的线路调整:典型值0.05%/V - 高精度输出电压:2.0% - 小型封装:SOT-23-5(Mini-mold) - 内置芯片使能电路(两种类型:A:活跃“L”,B:活跃“H”) - 内置折返保护电路:短路电流典型值30mA

功能详解: - 这些IC通过反馈寄存器R1和R2检测输出电压VOUT的波动,并通过误差放大器与参考电压比较,以输出恒定电压。包括短路模式保护的电流限制电路和芯片使能电路。

应用信息: - 适用于手机(如GSM、CDMA、PCS等)的电源 - 家用电器(如相机、VCR和摄像机)的电源 - 电池供电设备的电源
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