R1170x SERIES
800mA LDO REGULATOR
NO.EA-084-111027
OUTLINE
The R1170x Series are positive voltage regulator ICs by CMOS process. The R1170x Series have features of
high ripple rejection, low dropout voltage, high output voltage accuracy, low consumption current. Each of these
ICs consists of a voltage reference unit, an error amplifier, resistor net for setting output voltage, a current limit
circuit at short mode, a chip enable circuit, and thermal-shunt circuit. Output Voltage of R1170 is fixed in the IC.
Low consumption current by the merit of CMOS process and built-in transistors with low ON-resistance make
low dropout voltage and chip enable function prolong the battery life. These regulators are remarkable
improvement on the current regulators in terms of ripple rejection, input transient response, and load transient
response.
Maximum Output Current is large for its compact size.
Thus, the R1170x Series are suitable for various power sources for portable appliances.
Since the packages for these ICs are the SOT-89-5 package, HSON-6, or HSOP-6J, high density mounting of
the ICs on boards is possible.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
Supply Current ............................................................. Typ. 80μA
Standby Current ........................................................... Typ. 0.1μA
Output Current ............................................................. Min. 800mA (VIN=VOUT+1.0V)
Dropout Voltage ........................................................... Typ. 0.12V (VOUT=3.0V, IOUT=300mA)
Output Voltage Accuracy.............................................. ±2.0%
Temperature-Drift Coefficient of Output Voltage .......... Typ.±100ppm/°C
Line Regulation ............................................................ Typ. 0.05%/V
Output Voltage ............................................................. 1.5V to 5.0V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
Packages ..................................................................... HSON-6, SOT-89-5, HSOP-6J
Built-in Current Limit Circuit
Built-in Thermal Shutdown Circuit
Ceramic capacitors are recommended to be used with this IC
APPLICATIONS
•
•
•
•
Local Power source for Notebook PC.
Local Power source for portable appliances, cameras, and videos.
Local Power source for equipment of battery-use.
Local Power source for home appliances.
1
R1170x
BLOCK DIAGRAMS
R1170xxx1A
R1170Dxxx1B
VDD
VOUT
VDD
VOUT
Vref
Vref
Current Limit
Thermal Shutdown
Current Limit
Thermal Shutdown
CE
GND
CE
GND
SELECTION GUIDE
The output voltage, the chip-enable polarity, package for the ICs can be selected at the user’s request.
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
R1170Dxx1∗-TR-FE
HSON-6
3,000 pcs
Yes
Yes
R1170Hxx1∗-T1-FE
SOT-89-5
1,000 pcs
Yes
Yes
R1170Sxx1∗-E2-FE
HSOP-6J
1,000 pcs
Yes
Yes
xx : The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps.
(For other voltages, please refer to MARK INFORMATIONS.)
∗ : CE pin polarity are options as follows.
(A) "L" active
(B) "H" active
2
R1170x
PIN CONFIGURATION
• HSON-6
Top View
6
5
• SOT-89-5
Bottom View
4
4
5
5
• HSOP-6J
4
6
5
4
3
1
2
3
6
∗
∗
1
2
∗
3
3
2
1
1
2
PIN DESCRIPTION
•
HSON-6
Pin No
1
2
Symbol
Description
VOUT
*1
Voltage Regulator Output Pin
VOUT
*1
Voltage Regulator Output Pin
Chip Enable Pin
3
CE or CE
4
GND
5
*1
Input Pin
*1
Input Pin
6
VDD
VDD
Ground Pin
∗) Tab and tab suspension leads in the
parts are GND level.
(They are connected to the reverse side of the IC.)
The tab is better to be connected to the GND, but leaving it open is also acceptable.
The tab suspension leads should be open and do not connect to other wires or land patterns.
∗1) The VOUT pin and VDD pin must be wired each other when it is mounted on board.
•
SOT-89-5
Pin No
Symbol
Description
1
CE or CE
2
GND
3
NC
No Connection
4
VDD
Input Pin
5
VOUT
Voltage Regulator Output Pin
Chip Enable Pin
Ground Pin
3
R1170x
•
HSOP-6J
Pin No
Symbol
1
VOUT
2
GND
Description
Voltage Regulator Output Pin
*1
Ground Pin
3
CE or CE
Chip Enable Pin
4
NC
No Connection
5
GND
6
VDD
*1
Ground Pin
Input Pin
∗1) The GND pin must be wired together when it is mounted on board.
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
Unit
7.0
V
VIN
Input Voltage
VCE
Input Voltage ( CE or CE Input Pin)
−0.3 to VIN+0.3
V
VOUT
Output Voltage
−0.3 to VIN+0.3
V
PD
Power Dissipation (HSON-6)*
900
Power Dissipation (SOT-89-5)*
900
Power Dissipation (HSOP-6J)*
1700
mW
Topt
Operating Temperature
−40 to 85
°C
Tstg
Storage Temperature
−55 to 125
°C
∗) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
4
R1170x
ELECTRICAL CHARACTERISTICS
•
R1170xxxxA
Symbol
Topt=25°C
Item
Conditions
Min.
Typ.
Max.
Unit
6.0
V
VIN
Input Voltage
ISS
Supply Current
VIN−VOUT=1.0V,
VCE=GND
80
160
μA
Standby Current
VIN=VCE=6.0V
0.1
1.0
μA
VOUT
Output voltage
VIN−VOUT=1.0V
IOUT=100mA
×1.02
V
ΔVOUT/
ΔIOUT
Load regulation
VIN−VOUT=1.0V
1mA <
= IOUT <
= 300mA
30
100
mV
VOUT=1.5V
0.35
0.45
VOUT=1.6V
0.30
0.35
VOUT=1.7V
0.25
0.30
Istandby
VDIF
ΔVOUT/
ΔVIN
RR
ΔVOUT/
ΔTopt
Dropout Voltage
Line regulation
Ripple Rejection
IOUT=300mA
×0.98
1.8V
<
=
VOUT
<
=
2.0V
0.20
0.25
2.1V
<
=
VOUT
<
=
2.4V
0.15
0.20
2.5V
<
=
VOUT
<
=
5.0V
0.12
0.18
0.05
0.30
IOUT=100mA
VOUT+0.5V <
= VIN <
= 6.0V
<
1.5V <
V
OUT
4.7V:
=
=
f=1kHz, VIN−VOUT=1.0V
Ripple 0.5Vp-p
4.8V <
= VOUT <
= 5.0V:
f=1kHz, VIN=5.7V
Ripple 0.5Vp-p
dB
50
IOUT=10mA, VIN−VOUT=1.0V
−40°C <
= Topt <
= 85°C
ILIM
Output Current
VIN−VOUT=1.0V
ISC
Short Current Limit
VOUT=0V
RPU
Pull-up resistancefor CE pin
1.25
VCEH
CE Input Voltage "H"
VCEL
CE Input Voltage "L"
TTSR
Thermal Shutdown
Junction Temperature
Detector Threshold Temperature
Thermal Shutdown
Junction Temperature
Released Temperature
%/V
50
Output Voltage
Temperature Coefficient
TTSD
V
ppm/
°C
±100
800
mA
40
2.50
mA
5.00
MΩ
1.50
VIN
V
0
0.25
V
150
°C
120
°C
5
R1170x
•
R1170xxxxB
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
6.0
V
VIN
Input voltage
ISS
Supply Current
VIN−VOUT=1.0V,VCE=VIN
80
160
μA
Standby Current
VIN=6.0V,VCE=GND
0.1
1.0
μA
Reference Voltage for
Adjustable Voltage Regulator
VIN−VOUT=1.0V
IOUT=100mA
×1.02
V
Load regulation
VIN−VOUT=1.0V
1mA <
= IOUT <
= 300mA
30
100
mV
VOUT=1.5V
0.35
0.45
VOUT=1.6V
0.30
0.35
VOUT=1.7V
0.25
0.30
Istandby
VOUT
ΔVOUT/
ΔIOUT
VDIF
ΔVOUT/
ΔVIN
RR
ΔVOUT/
ΔTopt
Dropout Voltage
Line regulation
Ripple Rejection
IOUT=300mA
×0.98
1.8V
<
=
VOUT
<
=
2.0V
0.20
0.25
2.1V
<
=
VOUT
<
=
2.4V
0.15
0.20
2.5V
<
=
VOUT
<
=
5.0V
0.12
0.18
0.05
0.30
IOUT=100mA
VOUT+0.5V <
= VIN <
= 6.0V
1.5V <
= VOUT <
= 4.7V:
f=1kHz, VIN−VOUT=1.0V
Ripple 0.5Vp-p
4.8V <
= VOUT <
= 5.0V:
f=1kHz, VIN=5.7V
Ripple 0.5Vp-p
dB
50
IOUT=10mA, VIN−VOUT=1.0V
−40°C <
= Topt <
= 85°C
ILIM
Output Current
VIN−VOUT=1.0V
ISC
Short Current Limit
VOUT=0V
RPD
Pull-down resistance for CE pin
1.25
VCEH
CE Input Voltage "H"
VCEL
CE Input Voltage "L"
TTSR
Thermal Shutdown
Junction Temperature
Detector Threshold Temperature
Thermal Shutdown
Junction Temperature
Released Temperature
%/V
50
Output Voltage
Temperature Coefficient
TTSD
6
Topt=25°C
ppm/
°C
±100
800
mA
40
2.50
mA
5.00
MΩ
1.5
VIN
V
0
0.25
V
150
°C
120
°C
R1170x
TEST CIRCUITS
CE
VOUT
VDD
IN
CE
OUT
IN
10μF
R1170xxx1B
SERIES
10μF
10μF
GND
GND
Standard Test Circuit
Supply Current Test Circuit
CE
IN
OUT
ISS
IOUT
10μF
R1170xxx1B
SERIES
VOUT
VDD
CE
VOUT
VDD
R1170xxx1B
SERIES
OUT
VOUT
VDD
IN
IOUT
10μF
R1170xxx1B
SERIES
OUT
10μF
10μF
P.G.
I1
GND
Test Circuit for Ripple Rejection,
Input Transient Response
I2
GND
Test Circuit for Load Transient Response
7
R1170x
Technical Notes on External Components and Typical Application
Phase Compensation
In these ICs, phase compensation is made with the output capacitor for securing stable operation even if the
load current is varied. For this purpose, use as much as 10µF Capacitor as CL.
If you use a tantalum type capacitor and ESR value of the capacitor is large, output might be unstable.
Evaluate your circuit with considering frequency characteristics. Further, refer to the Typical Characteristics No.
12.
Mounting on PCB
Make VDD and GND lines sufficient. If their impedance is high, a current flows, the noise picked up or unstable
operation may result. Further use as much as 10µF capacitor between VDD pin and GND pin as close as
possible.
Set an Output capacitor between VOUT pin and GND pin for phase compensation as close as possible.
(Refer to the example of typical application)
CE
IN
VDD
R1170xxx1B
VOUT
OUT
CL
CI
GND
CI=10μF(Ceramic), CL=10μF(Ceramic)
Example of the typical application of R1170xxxxB
8
R1170x
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current (Topt=25°C)
R1170x151B
R1170x301B
3.5
VIN=5V
VIN=2.5V
1.6
Output Voltage VOUT(V)
Output Voltage VOUT(V)
1.8
1.4
1.2
VIN=2V
1
0.8
0.6
VIN=3.5V
0.4
0.2
0
3
VIN=4V
2.5
VIN=3.5V
2
1.5
1
0.5
0
0
250
500
750
1000 1250 1500
0
Output Current IOUT(mA)
250
500
750
1000 1250 1500
Output Current IOUT(mA)
R1170x501B
Output Voltage VOUT(V)
6
5
VIN=6V
4
VIN=5.5V
3
2
1
0
0
250
500
750
1000 1250 1500
Output Current IOUT(mA)
2) Output Voltage vs. Input Voltage (Topt=25°C)
R1170x151B
R1170x201B
2.2
1.6
IOUT=1mA
Output Voltage VOUT(V)
Output Voltage VOUT(V)
1.7
IOUT=10mA
1.5
1.4
IOUT=100mA
1.3
IOUT=300mA
1.2
1.1
2.1
IOUT=10mA
2
IOUT=1mA
1.9
1.8
IOUT=100mA
1.7
IOUT=300mA
1.6
1.5
1.4
1
2
3
4
Input Voltage VIN(V)
5
6
1
2
3
4
5
6
Input Voltage VIN(V)
9
R1170x
R1170x301B
R1170x401B
4.2
3.1
IOUT=10mA
IOUT=1mA
Output Voltage VOUT(V)
Output Voltage VOUT(V)
3.2
3.0
2.9
2.8
IOUT=100mA
2.7
IOUT=300mA
2.6
3
4
5
4.0
3.9
3.8
IOUT=100mA
3.7
IOUT=300mA
3.6
3.5
3.4
3.5
2.5
2
4.1 IOUT=1mA IOUT=10mA
6
Input Voltage VIN(V)
4
4.5
5
5.5
6
Input Voltage VIN(V)
R1170x501B
Output Voltage VOUT(V)
5.2
IOUT=1mA
5.0
IOUT=10mA
IOUT=100mA
4.8
4.6
IOUT=300mA
4.4
4.2
4.0
3.8
4.0
4.5
5.0
5.5
6.0
Input Voltage VIN(V)
3) Dropout Voltage vs. Output Current
R1170x151B
R1170x201B
0.8
0.7
25°C
0.6
0.5
85°C
0.4
-40°C
0.3
0.2
0.1
0
0.7
0.6
25°C
0.5
85°C
0.4
0.3
-40°C
0.2
0.1
0
0
100 200 300 400 500 600 700 800
Output Current IOUT(mA)
10
Dropout Voltage VDIF(V)
Dropout Voltage VDIF(V)
0.8
0
100 200 300 400 500 600 700 800
Output Current IOUT(mA)
R1170x
R1170x401B
0.45
0.45
0.40
0.40
25°C
0.35
0.30
85°C
0.25
0.20
-40°C
0.15
0.10
0.05
Dropout Voltage VDIF(V)
Dropout Voltage VDIF(V)
R1170x301B
0.50
0.00
0.35
25°C
0.30
0.25
85°C
0.20
0.15
-40°C
0.10
0.05
0.00
0
100 200 300 400 500 600 700 800
0
Output Current IOUT(mA)
100 200 300 400 500 600 700 800
Output Current IOUT(mA)
R1170x501B
Dropout Voltage VDIF(V)
0.35
0.30
25°C
0.25
85°C
0.20
0.15
-40°C
0.10
0.05
0.00
0
100 200 300 400 500 600 700 800
Output Current IOUT(mA)
4) Output Voltage vs. Temperature
R1170x151B
1.60
1.58
1.55
1.53
1.50
1.48
1.45
1.43
1.40
-50
-25
0
25
50
Temperature Topt(°C)
75
100
VIN=3V, IOUT=10mA
2.10
Output Voltage VOUT(V)
Output Voltage VOUT(V)
R1170x201B
VIN=2.5V, IOUT=10mA
2.08
2.05
2.03
2.00
1.98
1.95
1.93
1.90
-50
-25
0
25
50
75
100
Temperature Topt(°C)
11
R1170x
R1170x301B
3.20
VIN=5V, IOUT=10mA
4.20
3.15
Output Voltage VOUT(V)
Output Voltage VOUT(V)
R1170x401B
VIN=4V, IOUT=10mA
3.10
3.05
3.00
2.95
2.90
2.85
2.80
-50
-25
0
25
50
75
4.15
4.10
4.05
4.00
3.95
3.90
3.85
3.80
-50
100
-25
Temperature Topt(°C)
0
25
50
75
100
5
6
Temperature Topt(°C)
R1170x501B
VIN=6V, IOUT=10mA
Output Voltage VOUT(V)
5.20
5.15
5.10
5.05
5.00
4.95
4.90
4.85
4.80
-50
-25
0
25
50
75
100
Temperature Topt(°C)
5) Supply Current vs. Input Voltage (Topt=25°C)
R1170x201B
120
100
100
Supply Current ISS(μA)
Supply Current ISS(μA)
R1170x151B
120
80
60
40
20
0
60
40
20
0
0
1
2
3
4
Input Voltage VIN(V)
12
80
5
6
0
1
2
3
4
Input Voltage VIN(V)
R1170x
R1170x401B
120
100
100
Supply Current ISS(μA)
Supply Current ISS(μA)
R1170x301B
120
80
60
40
20
0
80
60
40
20
0
0
1
2
3
4
5
6
0
1
Input Voltage VIN(V)
2
3
4
5
6
Input Voltage VIN(V)
R1170x501B
Supply Current ISS(μA)
120
100
80
60
40
20
0
0
1
2
3
4
5
6
Input Voltage VIN(V)
6) Supply Current vs. Temperature
R1170x151B
R1170x201B
VIN=2.5V
140
120
100
80
60
40
20
-50
-25
0
25
50
Temperature Topt(°C)
75
100
VIN=3V
160
Supply Current ISS(μA)
Supply Current ISS(μA)
160
140
120
100
80
60
40
20
-50
-25
0
25
50
75
100
Temperature Topt(°C)
13
R1170x
R1170x301B
R1170x401B
VIN=4V
140
120
100
80
60
40
20
-50
-25
0
25
50
75
100
Temperature Topt(°C)
VIN=6V
Supply Current ISS(μA)
140
120
100
80
60
40
20
-50
-25
0
25
50
75
100
Temperature Topt(°C)
7) Dropout Voltage vs. Set Output Voltage (Topt=25°C)
R1170x
0.7
Droput Voltage VDIF(V)
IOUT=400mA
0.6
0.5
IOUT=600mA
IOUT=800mA
0.4
0.3
0.2
IOUT=100mA
0.1
0.0
1
2
3
4
Set Output Voltage VSET(V)
14
140
120
100
80
60
40
20
-50
-25
0
25
50
Temperature Topt(°C)
R1170x501B
160
VIN=5V
160
Supply Current ISS(μA)
Supply Current ISS(μA)
160
5
75
100
R1170x
8) Ripple Rejection vs. Frequency
R1170x151B
70
60
50
40
30
20
10
0
0.01
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
80
R1170x201B
VIN=2.5V+0.5Vp-p, IOUT=100mA
0.1
1
10
70
60
50
40
30
20
10
0
0.01
100
Ripple Frequency f (kHz)
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
60
50
40
30
20
10
0.1
1
1
10
100
R1170x401B
VIN=4V+0.5Vp-p, IOUT=100mA
70
0
0.01
0.1
Ripple Frequency f (kHz)
R1170x301B
80
VIN=3V+0.5Vp-p, IOUT=100mA
10
100
Ripple Frequency f (kHz)
VIN=5V+0.5Vp-p, IOUT=100mA
70
60
50
40
30
20
10
0
0.01
0.1
1
10
100
Ripple Frequency f (kHz)
R1170x501B
Ripple Rejection RR(dB)
80
VIN=5.75+0.5Vp-p, IOUT=100mA
70
60
50
40
30
20
10
0
0.01
0.1
1
10
100
Ripple Frequency f (kHz)
15
R1170x
9) Ripple Rejection vs. Input Voltage
R1170x301B
60
f=400Hz
50
f=1kHz
40
30
IOUT=10mA, COUT=10μF
60
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
R1170x301B
IOUT=1mA, COUT=10μF
f=10kHz
20
10
0
f=400Hz
50
f=1kHz
40
30
f=10kHz
20
10
0
3
3.2
3.4
3.6
3
3.2
Input Voltage VIN(V)
3.4
3.6
Input Voltage VIN(V)
R1170x301B
IOUT=100mA, COUT=10μF
Ripple Rejection RR(dB)
60
f=400Hz
50
f=1kHz
40
30
f=10kHz
20
10
0
3
3.2
3.4
3.6
Input Voltage VIN(V)
10) Input Transient Response (Topt=25°C)
R1170x151B
tr=tf=10μs, IOUT=100mA, COUT=Ceramic 10μF
4
1.75
3.5
1.7
Input Voltage
1.65
2.5
1.6
2
1.55
Output Voltage
1.5
1.5
1
1.45
0.5
1.4
0
20
40
60
80
100
Time T(μs)
16
3
120
140
160
180
0
200
Input Voltage VIN(V)
Output Voltage VOUT(V)
1.8
R1170x
R1170x301B
tr=tf=10μs, IOUT=100mA, COUT=Ceramic 10μF
6
5
3.3
Input Voltage
3.2
4
3.1
3
Output Voltage
3.0
2
2.9
1
2.8
0
20
40
60
80
100
120
140
160
180
Input Voltage VIN(V)
Output Voltage VOUT(V)
3.4
0
200
Time T(μs)
R1170x301B
6
3.3
5
Input Voltage
3.2
4
3
3.1
Output Voltage
3.0
2
2.9
1
2.8
0
20
40
60
80
100
120
140
160
180
Input Voltage VIN(V)
Output Voltage VOUT(V)
tr=tf=10μs, IOUT=100mA, COUT=Ceramic 4.7μF
3.4
0
200
Time T(μs)
R1170x501B
tr=tf=10μs, IOUT=100mA, COUT=Ceramic 10μF
6.5
5.15
6.0
Input Voltage
5.5
5.10
5.05
5.0
Output Voltage
5.00
4.5
4.95
4.0
4.90
0
20
40
60
80
100
120
140
160
180
Input Voltage VIN(V)
Output Voltage VOUT(V)
5.20
3.5
200
Time T(μs)
17
R1170x
R1170x501B
tr=tf=10μs, IOUT=100mA, COUT=Ceramic 4.7μF
6.5
6.0
5.15
Input Voltage
5.10
5.5
5.05
5.0
Output Voltage
5.00
4.5
4.95
4.0
4.90
0
20
40
60
80
100
120
140
160
180
Input Voltage VIN(V)
Output Voltage VOUT(V)
5.20
3.5
200
Time T(μs)
11) Load Transient Response (Topt=25°C)
R1170x151B
2.0
120
1.9
100
80
1.8
Output Current
60
1.7
1.6
40
Output Voltage
1.5
20
1.4
0
20
40
60
80
100
120
140
160
180
Output Current IOUT(mA)
Output Voltage VOUT(V)
tr=tf=3μs, CIN=Ceramic 10μF, VIN=2.5V, COUT=Ceramic 10μF
0
200
Time T(μs)
R1170x301B
3.5
120
3.4
100
3.3
80
Output Current
3.2
60
3.1
40
Output Voltage
20
3.0
2.9
0
20
40
60
80
100
Time T(μs)
18
120
140
160
180
0
200
Output Current IOUT(mA)
Output Voltage VOUT(V)
tr=tf=3μs, CIN=Ceramic 10μF, VIN=4V, COUT=Ceramic 10μF
R1170x
R1170x301B
3.5
120
3.4
100
3.3
80
Output Current
3.2
60
3.1
40
Output Voltage
3.0
20
2.9
0
20
40
60
80
100
120
140
160
180
Output Current IOUT(mA)
Output Voltage VOUT(V)
tr=tf=3μs, CIN=Ceramic 10μF, VIN=4V, COUT=Ceramic 4.7μF
0
200
Time T(μs)
R1170x501B
tr=tf=3μs, CIN=Ceramic 10μF, COUT=Ceramic 10μF
150
5.15
100
Output Current
5.10
50
0
5.05
Output Voltage
5.00
4.95
Output Current IOUT(mA)
Output Voltage VOUT(V)
5.20
4.90
0
20
40
60
80
100
120
140
160
180
200
Time T(μs)
R1170x501B
tr=tf=3μs, CIN=Ceramic 10μF, COUT=Ceramic 4.7μF
150
100
5.15
Output Current
5.10
50
5.05
0
Output Voltage
5.00
4.95
Output Current IOUT(mA)
Output Voltage VOUT(V)
5.20
4.90
0
20
40
60
80
100
120
140
160
180
200
Time T(μs)
19
R1170x
12) Stable Area (Topt=25°C, VIN = Set Output Voltage+1V, CIN = Ceramic 10μF)
VOUT
CE
Ceramic
Capacitor
R1170xxxxB
VIN
VIN
S.A.
Spectrum
Analyzer
GND
ESR
Ceramic
Capacitor
IOUT
As an output capacitor for this IC, Ceramic capacitor is recommendable. However, other low ESR type
capacitor can be used with this IC.
For your reference, noise level is tested with the circuit as shown above, and if the noise level is 40μV or less
than 40μV, the ESR values are plotted as stable area. Upper limit is described in the next four graphs, or ESR vs.
Output Current. (Hatched area is the stable area.)
R1170x151B
R1170x151B
COUT=Ceramic 10μF
100
COUT=Ceramic 4.7μF
100
f=400Hz
f=1kHz
ESR(Ω)
10
ESR(Ω)
10
f=10kHz
1
1
0.1
0.1
0
200
400
600
800
0
Output Current IOUT(mA)
R1170x301B
600
800
COUT=Ceramic 4.7μF
100
ESR(Ω)
10
ESR(Ω)
10
1
1
0.1
0.1
0
200
400
600
Output Current IOUT(mA)
20
400
R1170x301B
COUT=Ceramic 10μF
100
200
Output Current IOUT(mA)
800
0
200
400
600
Output Current IOUT(mA)
800
R1170x
R1170x501B
R1170x501B
COUT=Ceramic 10μF
100
10
ESR(Ω)
10
ESR(Ω)
COUT=Ceramic 4.7μF
100
1
0.1
1
0.1
0.01
0.01
0
100 200 300 400 500 600 700 800
Output Current IOUT(mA)
0
100 200 300 400 500 600 700 800
Output Current IOUT(mA)
21
1. The products and the product specifications described in this document are subject to change or discontinuation of
production without notice for reasons such as improvement. Therefore, before deciding to use the products, please
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characteristics in the evaluation stage.
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the technical information.
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