R1172x SERIES
SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO
NO.EA-122-130924
OUTLINE
The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super
low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is
typically 0.32Ω. Therefore, applications that require a large current at small dropout are suitable for the R1172x
series. Low input voltage is acceptable and low output voltage can be set. The minimum input voltage is 1.4V,
and the lowest set output voltage is 0.8V. Each of these ICs consists of a voltage reference unit, an error
amplifier, resistor net for setting output voltage, a current limit circuit at over-current, a chip enable circuit, a
thermal-shutdown circuit, and so on. A stand-by mode with ultra low consumption current can be realized with
the chip enable pin. The output voltage of R1172 is fixed in the IC.
Since the packages for these ICs are SOT-23-5, SOT-89-5, HSON-6, and HSOP-6J with high power
dissipation, high density mounting of the ICs on boards is possible.
FEATURES
•
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•
•
•
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•
•
•
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•
•
•
Output Current ............................................................ 1A
Supply Current ............................................................. Typ. 60μA
Standby Current .......................................................... Typ. 0.1μA
Input Voltage Range ................................................... 1.4V to 6.0V
Output Voltage.............................................................. 0.8V to 5.0V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
Dropout Voltage............................................................ Typ. 0.32V (VOUT=1.5V, IOUT=1A)
Typ. 0.18V (VOUT=2.8V, IOUT=1A)
Ripple Rejection ........................................................... Typ. 70dB (VOUT=2.8V)
Output Voltage Accuracy .............................................. ±2.0%
Temperature-Drift Coefficient of Output Voltage .......... Typ. ±100ppm/°C
Line Regulation ............................................................ Typ. 0.05%/V
Load Regulation ......................................................... Typ. 15mV at IOUT=300mA, Typ. 50mV at IOUT=1A
Packages .................................................................... SOT-23-5, SOT-89-5, HSON-6, HSOP-6J
Built-in Inrush current limit circuit ............................... Typ. 500 mA
Built-in Fold-Back Protection Circuit ........................... Typ. 250mA (Current at short mode)
Built-in Thermal Shutdown Circuit .............................. Thermal Shutdown Temperature ; Typ. 150°C
Released Temperature ; Typ. 120°C
Built-in Auto Discharge Function ................................ D Version
Output capacitors ....................................................... CIN=COUT=Tantalum 4.7μF (VOUT < 1.0V)
CIN=COUT=Ceramic 4.7μF (VOUT >
= 1.0V)
APPLICATIONS
• Local Power source for Notebook PC.
• Local Power source for portable communication equipments, cameras, and VCRs.
• Local Power source for home appliances.
1
R1172x
BLOCK DIAGRAMS
R1172xxx1A
VDD
VOUT
Vref
Current Limit
Thermal Shutdown
CE
GND
R1172xxx1B
R1172xxx1D
VDD
VOUT
VDD
VOUT
Vref
Vref
Current Limit
Thermal Shutdown
Current Limit
Thermal Shutdown
CE
GND
CE
GND
SELECTION GUIDE
The output voltage, chip-enable polarity, auto discharge function, and package for the ICs can be selected at
the user’s request.
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
R1172Nxx1∗-TR-FE
SOT-23-5
3,000 pcs
Yes
Yes
R1172Hxx1∗-T1-FE
SOT-89-5
1,000 pcs
Yes
Yes
R1172Dxx1∗-TR-FE
HSON-6
3,000 pcs
Yes
Yes
R1172Sxx1∗-E2-FE
HSOP-6J
1,000 pcs
Yes
Yes
xx : The output voltage can be designated in the range from 0.8V(08) to 5.0V(50) in 0.1V steps.
(HSOP-6J : 0.8V to 3.5V)
(For other voltages, please refer to MARK INFORMATIONS.)
∗ : CE pin polarity and auto discharge function at off state are options as follows.
(A) "L" active, without auto discharge function at off state
(B) "H" active, without auto discharge function at off state
(D) "H" active, with auto discharge function at off state
2
R1172x
PIN CONFIGURATIONS
z SOT-23-5
5
z SOT-89-5
4
5
4
z HSON-6
Top View
6
5
1
2
Bottom View
4
4
∗
(mark side)
3
1
2
3
1
2
3
z HSOP-6J
5
5
4
1
2
3
6
∗
3
6
∗
2
1
PIN DESCRIPTIONS
• SOT-23-5
Pin No.
Symbol
Description
1
VOUT
Voltage Regulator Output Pin
2
GND
Ground Pin
3
VDD
Input Pin
4
NC
No Connection
5
CE or CE
Chip Enable Pin
• SOT-89-5
Pin No.
Symbol
Description
1
CE or CE
2
GND
3
NC
No Connection
4
VDD
Input Pin
5
VOUT
Voltage Regulator Output Pin
Pin No.
Symbol
Chip Enable Pin
Ground Pin
• HSON-6
Description
1
VOUT*
1
Voltage Regulator Output Pin
2
VOUT*1
Voltage Regulator Output Pin
3
CE or CE
4
GND
Ground Pin
5
VDD*1
Input Pin
6
VDD*1
Input Pin
Chip Enable Pin
∗) Tab and tab suspension leads in the
parts are GND level.
(They are connected to the reverse side of the IC.)
The tab is better to be connected to the GND, but leaving it open is also acceptable.
The tab suspension leads should be open and do not connect to other wires or land patterns.
∗1) The VOUT pin and VDD pin must be wired each other when it is mounted on board.
3
R1172x
• HSOP-6J
Pin No.
Symbol
Description
1
VOUT
2
GND*1
3
CE or CE
Chip Enable Pin
4
NC
No Connection
5
GND*1
6
VDD
Voltage Regulator Output Pin
Ground Pin
Ground Pin
Input Pin
∗1) The GND pin must be wired together when it is mounted on board.
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
VIN
Input Voltage
VCE
Input Voltage ( CE or CE Input Pin)
VOUT
Output Voltage
Rating
Unit
6.5
V
−0.3 to 6.5
V
−0.3 to VIN+0.3
V
Power Dissipation (SOT-23-5) *
420
Power Dissipation (SOT-89-5) *
900
Power Dissipation (HSON-6) *
900
Power Dissipation (HSOP-6J) *
1700
Topt
Operating Temperature Range
−40 to 85
°C
Tstg
Storage Temperature Range
−55 to 125
°C
PD
mW
∗) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
4
R1172x
ELECTRICAL CHARACTERISTICS
•
R1172xxx1A
Symbol
Topt=25°C
Item
Conditions
Min.
Typ.
Unit
6.0
V
VIN
Input Voltage
ISS
Supply Current
VIN−VOUT=1.0V, VCE=0V,
IOUT =0A
60
100
μA
Standby Current
VIN= 6.0V, VCE=VIN
0.1
1.0
μA
Output Voltage
VIN−VOUT=1.0V
IOUT=100mA
×0.98
×1.02
V
1.5V
−30
+30
mV
VIN−VOUT=0.3V
1mA <
= IOUT <
= 300mA
If VOUT <
= 1.1V, then VIN=1.4V
−15
Istandby
VOUT
ΔVOUT/
ΔIOUT
VDIF
Load Regulation
1.4
Max.
VOUT > 1.5V
VOUT <
=
50
Refer to Dropout Voltage Table
Line Regulation
IOUT=100mA
VOUT+0.5V <
= VIN <
= 6.0V
<
If VOUT = 0.9V,
1.4V <
= VIN <
= 6.0V
Ripple Rejection
f=1kHz (VOUT <
= 4.0V)
f=1kHz (VOUT > 4.0V)
Ripple 0.5Vp-p, VIN−VOUT=1.0V,
IOUT=100mA
If VOUT <
= 1.2V, VIN−VOUT=1.5V,
IOUT=100mA
Output Voltage
Temperature Coefficient
IOUT=100mA
−40°C <
= Topt
ILIM
Output Current
VIN−VOUT=1.0V
ISC
Short Current Limit
VOUT=0V
RPU
Pull-up Resistance for CE pin
1.9
VCEH
CE Input Voltage "H"
VCEL
CE Input Voltage "L"
ΔVOUT/
ΔVIN
RR
ΔVOUT/
ΔTopt
TTSD
TTSR
en
Thermal Shutdown
Temperature
Thermal Shutdown
Released Temperature
Output Noise
30
mV
VIN−VOUT=0.3V
1mA <
= IOUT <
= 1A
1.1V,
then VIN=1.7V
If VOUT <
=
Dropout Voltage
15
<
=
0.05
0.20
%/V
70
60
dB
±100
85°C
ppm/°C
1
A
250
5.0
mA
15.0
MΩ
1.0
6.0
V
0
0.4
V
Junction Temperature
150
°C
Junction Temperature
120
°C
BW=10Hz to 100kHz
30
μVrms
5
R1172x
•
R1172xxx1B/D
Symbol
Item
Conditions
Min.
Typ.
Unit
6.0
V
Input Voltage
ISS
Supply Current
VIN−VOUT=1.0V, VIN=VCE,
IOUT=0A
60
100
μA
Standby Current
VIN= 6.0V, VCE=0V
0.1
1.0
μA
Output Voltage
VIN−VOUT=1.0V
IOUT=100mA
VOUT
ΔVOUT/
ΔIOUT
VDIF
Load Regulation
1.4
Max.
VIN
Istandby
VOUT > 1.5V
×0.98
×1.02
V
<
=
1.5V
−30
+30
mV
VIN−VOUT=0.3V
1mA <
= IOUT <
= 300mA
If VOUT <
= 1.1V, then VIN=1.4V
−15
VOUT
Dropout Voltage
Refer to Dropout Voltage Table
Ripple Rejection
f=1kHz (VOUT <
= 4.0V)
f=1kHz (VOUT > 4.0V)
Ripple 0.5Vp-p, VIN−VOUT=1.0V
IOUT=100mA
If VOUT <
= 1.2V, VIN−VOUT=1.5V,
IOUT=100mA
Output Voltage
Temperature Coefficient
IOUT=100mA
−40°C <
= Topt
ILIM
Output Current
VIN−VOUT=1.0V
ISC
Short Current Limit
VOUT=0V
RPD
Pull-down Resistance for CE
pin
1.9
VCEH
CE Input Voltage "H"
VCEL
CE Input Voltage "L"
ΔVOUT/
ΔTopt
TTSD
TTSR
en
Thermal Shutdown
Temperature
Thermal Shutdown
Released Temperature
Output Noise
30
50
Line Regulation
RR
15
mV
VIN−VOUT=0.3V
1mA <
= IOUT <
= 1A
If VOUT <
= 1.1V, then VIN=1.7V
IOUT=100mA
VOUT+0.5V <
= VIN <
= 6.0V
If VOUT <
= 0.9V,
1.4V <
= VIN <
= 6.0V
ΔVOUT/
ΔVIN
6
Topt=25°C
<
=
0.05
0.20
%/V
70
60
dB
±100
85°C
ppm/°C
1
A
250
5.0
mA
15.0
MΩ
1.0
6.0
V
0
0.4
V
Junction Temperature
150
°C
Junction Temperature
120
°C
BW=10Hz to 100kHz
30
μVrms
R1172x
•
Dropout Voltage by Output Voltage
Topt=25°C
Dropout Voltage VDIF (V)
Output Voltage
VOUT (V)
IOUT=300mA
IOUT=1A
Typ.
Max.
Typ.
0.8
<
=
VOUT < 0.9
0.33
0.57
0.72
0.9
<
=
VOUT < 1.0
0.22
0.47
0.64
1.0
<
=
VOUT < 1.5
0.18
0.32
0.56
1.5
<
=
VOUT < 2.6
0.10
0.15
0.32
0.05
0.10
0.18
2.6
<
=
VOUT
7
R1172x
TYPICAL APPLICATION (R1172xxx1B/D)
VDD
C1
VOUT
R1172x
Series
CE
VOUT
C2
GND
TECHNICAL NOTES
When using these ICs, consider the following points:
Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a capacitor C2 with good frequency characteristics and ESR (Equivalent Series Resistance).
The recommendation value is as follows.
Output Voltage C2 recommendation value
VOUT < 1.0V
1.0
<
=
VOUT
<
=
3.3V
3.3V < VOUT
Components Recommendation
Tantalum 4.7μF or more
Ceramic 4.7μF or more
Ceramic 4.7μF or more
Kyocera 4.7μF (1608)
Murata 4.7μF (1608)
Murata 10μF (1608)
Kyocera 4.7μF (thin 2012)
Murata 10μF (2012)
Part Number : CM105X5R475M06AB
Part Number : GRM188R60J475KE19B
Part Number : GRM188B30G106ME46B
Part Number : CT21X5R475M06AB
Part Number : GRM21BB30J106K
∗ If you use a tantalum type capacitor and ESR value of the capacitor is large, output might be unstable.
Evaluate your circuit with considering frequency characteristics.
∗ Depending on the capacitor size, manufacturer, and part number, the bias characteristics and temperature
characteristics are different. Evaluate the circuit with actual using capacitors.
PCB Layout
Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result.
Connect a capacitor C1 with a capacitance value as much as 4.7μF or more between VDD and GND pin, and as
close as possible to the pins.
Set external components, especially the output capacitor C2, as close as possible to the ICs, and make wiring
as short as possible.
8
R1172x
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current (Topt=25°C)
R1172x151x
1.6
0.8
1.4
0.7
0.6
0.5
0.4
VDD=1.4V
VDD=1.5V
VDD=1.6V
VDD=2.0V
VDD=2.8V
0.3
0.2
0.1
Output Voltage VOUT(V)
Output Voltage VOUT(V)
R1172x081x
0.9
0.0
1.2
1.0
0.8
0.6
VDD=1.8V
VDD=2.5V
VDD=3.5V
0.4
0.2
0.0
0
500
1000
1500
Output Current IOUT(mA)
2000
0
3.2
4.5
2.8
4.0
2.4
2.0
1.6
1.2
VDD=3.3V
VDD=4.0V
VDD=5.0V
0.8
0.4
0.0
0
2000
R1172x401x
500
1000
1500
Output Current IOUT(mA)
2000
Output Voltage VOUT(V)
Output Voltage VOUT(V)
R1172x301x
500
1000
1500
Output Current IOUT(mA)
3.5
3.0
2.5
2.0
VDD=4.3V
VDD=5.0V
VDD=6.0V
1.5
1.0
0.5
0.0
0
500
1000
1500
Output Current IOUT(mA)
2000
R1172x501x
Output Voltage VOUT(V)
6.0
5.0
4.0
3.0
VDD=5.3V
VDD=6.0V
2.0
1.0
0.0
0
500
1000
1500
Output Current IOUT(mA)
2000
9
R1172x
2) Output Voltage vs. Input Voltage (Topt=25°C)
R1172x081x
R1172x151x
1.6
Output Voltage VOUT(V)
Output Voltage VOUT(V)
1.2
1.0
0.8
0.6
IOUT=1mA
IOUT=50mA
IOUT=99mA
IOUT=300mA
0.4
0.2
0.0
1.4
1.2
1.0
0.8
IOUT=1mA
IOUT=50mA
IOUT=99mA
IOUT=300mA
0.6
0.4
0.2
0.0
0
1
2
3
4
Input Voltage VIN(V)
5
6
0
1
4.5
2.8
4.0
2.4
2.0
1.6
IOUT=1mA
IOUT=50mA
IOUT=99mA
IOUT=300mA
1.2
0.8
0.4
0.0
1
2
3
4
Input Voltage VIN(V)
5
6
R1172x501x
Output Voltage VOUT(V)
6
3.5
3.0
2.5
2.0
IOUT=1mA
IOUT=50mA
IOUT=99mA
IOUT=300mA
1.5
1.0
0.5
0.0
0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IOUT=1mA
IOUT=50mA
IOUT=99mA
IOUT=300mA
0
10
5
R1172x401x
3.2
Output Voltage VOUT(V)
Output Voltage VOUT(V)
R1172x301x
2
3
4
Input Voltage VIN(V)
1
2
3
4
Input Voltage VIN(V)
5
6
0
1
2
3
4
Input Voltage VIN(V)
5
6
R1172x
3) Supply Current vs. Input Current (Topt=25°C)
R1172x151x
70
70
60
60
Supply Current ISS(μA)
Supply Current ISS(µA)
R1172x081x
50
40
30
20
10
50
40
30
20
10
0
0
0
1
2
3
4
Input Voltage VIN(V)
5
0
6
1
5
6
5
6
R1172x401x
70
70
60
60
Supply Current ISS(μA)
Supply Current ISS(μA)
R1172x301x
2
3
4
Input Voltage VIN(V)
50
40
30
20
10
0
50
40
30
20
10
0
0
1
2
3
4
Input Voltage VIN(V)
5
6
5
6
0
1
2
3
4
Input Voltage VIN(V)
R1172x501x
Supply Current ISS(μA)
70
60
50
40
30
20
10
0
0
1
2
3
4
Input Voltage VIN(V)
11
R1172x
4) Output Voltage vs. Temperature (IOUT=100mA)
R1172x081x
R1172x151x
VIN=2.5V
1.53
0.82
1.52
Output Voltage VOUT(V)
Output Voltage VOUT(V)
VIN=1.8V
0.83
0.81
0.80
0.79
0.78
0.77
0.76
-50
-25
0
25
50
75
Temperature Topt(°C)
1.51
1.50
1.49
1.48
1.47
1.46
-50
100
-25
R1172x301x
0
25
50
75
Temperature Topt(°C)
R1172x501x
VIN=6.0V
5.02
3.04
5.00
Output Voltage VOUT(V)
Output Voltage VOUT(V)
VIN=4.0V
3.06
3.02
3.00
2.98
2.96
2.94
2.92
-50
-25
100
0
25
50
75
Temperature Topt(°C)
4.98
4.96
4.94
4.92
4.90
4.88
-50
100
-25
0
25
50
75
Temperature Topt(°C)
100
5) Supply Current vs. Temperature
R1172x081x
R1172x151x
80
70
70
60
50
40
30
20
10
0
-50
12
Supply Current ISS(μA)
Supply Current ISS(μA)
VIN=1.8V
80
-25
0
25
50
75
Temperature Topt(°C)
100
VIN=2.5V
60
50
40
30
20
10
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
R1172x
R1172x301x
R1172x501x
VIN=6.0V
80
80
70
70
Supply Current ISS(μA)
Supply Current ISS(μA)
VIN=4.0V
60
50
40
30
20
10
0
-50
-25
0
25
50
75
Temperature Topt(°C)
60
50
40
30
20
10
0
-50
100
-25
0
25
50
75
Temperature Topt(°C)
100
6) Dropout Voltage vs. Output Current
R1172x081x
R1172x091x
700
700
600
500
400
300
85°C
25°C
-40°C
200
100
Dropout Voltage VDIF(mV)
Dropout Voltage VDIF(mV)
800
600
500
400
300
85°C
25°C
-40°C
200
100
0
0
0
200
400
600
800
Output Current IOUT(mA)
1000
0
600
400
500
350
400
300
85°C
25°C
-40°C
200
100
0
0
1000
R1172x151x
200
400
600
800
Output Current IOUT(mA)
1000
Dropout Voltage VDIF(mV)
Dropout Voltage VDIF(mV)
R1172x101x
200
400
600
800
Output Current IOUT(mA)
300
250
200
150
85°C
25°C
-40°C
100
50
0
0
200
400
600
800
Output Current IOUT(mA)
1000
13
R1172x
R1172x301x
R1172x501x
Dropout Voltage VDIF(mV)
Dropout Voltage VDIF(mV)
250
200
150
100
85°C
25°C
-40°C
50
0
0
200
400
600
800
Output Current IOUT(mA)
200
180
160
140
120
100
80
60
40
20
0
0
1000
7) Dropout Voltage vs. Set Output Voltage
85°C
25°C
-40°C
200
400
600
800
Output Current IOUT(mA)
8) 0.8V Output type, Operating Input Voltage Range
R1172xxx1x
R1172x081x
800
1.8
100mA
200mA
400mA
600mA
800mA
1000mA
700
600
500
400
Input Voltage VIN(V)
Dropout Voltage VDIF(mV)
1000
300
200
Operating Input Voltage Range
1.6
1.4
1.2
1.0
100
0.8
0
0
1
2
3
4
Set Output Voltage VREG(V)
5
0
200
400
600
800
Output Current IOUT(mA)
1000
9) Ripple Rejection vs. Input Bias
R1172x301x
R1172x301x
VIN=4.0VDC+0.5Vp-p,IOUT=1mA
90
90
80
80
70
60
50
40
200Hz
1kHz
10kHz
100kHz
30
20
10
0
3.0
14
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
VIN=4.0VDC+0.2Vp-p,IOUT=1mA
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
3.5
70
60
50
40
200Hz
1kHz
10kHz
100kHz
30
20
10
0
3.0
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
3.5
R1172x
R1172x301x
R1172x301x
VIN=4.0VDC+0.5Vp-p,IOUT=10mA
90
90
80
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
VIN=4.0VDC+0.2Vp-p,IOUT=10mA
70
60
50
40
200Hz
1kHz
10kHz
100kHz
30
20
10
0
3.0
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
70
60
50
40
20
10
0
3.0
3.5
200Hz
1kHz
10kHz
100kHz
30
3.1
R1172x301x
90
80
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
VIN=4.0VDC+0.5Vp-p,IOUT=100mA
90
70
60
50
40
200Hz
1kHz
10kHz
100kHz
20
10
0
3.0
3.1
3.5
R1172x301x
VIN=4.0VDC+0.2Vp-p,IOUT=100mA
30
3.2
3.3
3.4
Input Voltage VIN(V)
3.2
3.3
3.4
Input Voltage VIN(V)
60
50
40
30
20
10
0
3.0
3.5
200Hz
1kHz
10kHz
100kHz
70
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
3.5
10) Ripple Rejection vs. Frequency
R1172x081x
R1172x101x
VIN=2.0VDC+0.5Vp-p,
COUT=Ceramic 4.7μF
80
90
70
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
VIN=1.8VDC+0.5Vp-p,
COUT=Tantalum 4.7μF
60
50
40
30
20
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=100mA
1
10
Frequency f(kHz)
100
70
60
50
40
30
20
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=100mA
1
10
Frequency f(kHz)
100
15
R1172x
R1172x301x
R1172x401x
VIN=5.0VDC+0.5Vp-p,
COUT=Ceramic 4.7μF
90
90
80
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
VIN=4.0VDC+0.5Vp-p,
COUT=Ceramic 4.7μF
70
60
50
40
30
20
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=100mA
1
10
Frequency f(kHz)
100
70
60
50
40
30
10
0
0.1
R1172x451x
70
70
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
80
60
50
40
30
IOUT=1mA
IOUT=30mA
IOUT=100mA
0
0.1
1
10
Frequency f(kHz)
100
VIN=6.0VDC+0.5Vp-p,
COUT=Ceramic 4.7μF
80
10
1
10
Frequency f(kHz)
R1172x501x
VIN=5.5VDC+0.5Vp-p,
COUT=Ceramic 4.7μF
20
IOUT=1mA
IOUT=30mA
IOUT=100mA
20
60
50
40
30
20
IOUT=1mA
IOUT=30mA
IOUT=100mA
10
0
0.1
100
1
10
Frequency f(kHz)
100
11) Line Transient Response (tr=tf=5μs, IOUT=100mA)
R1172x081x
R1172x101x
Input Voltage
4
3
1.08
3
0.86
2
0.84
1
0.82
0
0.80
0.78
Output Voltage
0.76
1.06
Input Voltage
1.04
1.02
2
1
0
Output Voltage
1.00
0.98
0.96
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
16
1.10
Output Voltage VOUT(V)
0.88
COUT=Ceramic 4.7μF
4
Input Voltage VIN(V)
Output Voltage VOUT(V)
0.90
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
Input Voltage VIN(V)
COUT=Tantalum 4.7μF
R1172x
R1172x301x
R1172x501x
COUT=Ceramic 4.7μF
5.15
3.12
5
5.12
3.09
Input Voltage
4
3.06
3
3.03
2
3.00
1
2.97
0
Output Voltage
2.94
7
6
Input Voltage
5.09
5
5.06
4
5.03
3
5.00
2
4.97
1
Output Voltage
0
4.94
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
Input Voltage VIN(V)
6
Output Voltage VOUT(V)
3.15
Input Voltage VIN(V)
Output Voltage VOUT(V)
COUT=Ceramic 4.7μF
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
12) Load Transient Response (tr=tf=500ns)
R1172x081x
Output Current
0.92
200
0.86
0
0.80
Output Voltage
0.68
Output Current
0.92
0.88
50
0
0.84
Output Voltage
0.80
0.76
0
R1172x081x
0
0.84
0.80
Output Voltage VOUT(V)
20
Output Current
0.88
6
8 10 12 14 16 18 20
Time t(μs)
1.00
40
0.92
4
VIN=1.8V,CIN=Tantalum 4.7μF,
COUT=Tantalum 10μF
VIN=1.8V,CIN=COUT= Tantalum 4.7μF
0.96
2
R1172x081x
Output Current IOUT(mA)
Output Voltage VOUT(V)
100
0.96
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
1.00
150
40
0.96
20
Output Current
0
0.92
0.88
0.84
0.80
Output Current IOUT(mA)
0.74
Output Voltage VOUT(V)
400
0.98
VIN=1.8V,CIN=COUT= Tantalum 4.7μF
1.00
600
Output Current IOUT(mA)
VIN=1.8V,CIN=COUT= Tantalum 4.7μF
Output Current IOUT(mA)
Output Voltage VOUT(V)
1.04
R1172x081x
Output Voltage
Output Voltage
0.76
0.76
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
17
R1172x
R1172x101x
1.4
Output Current
1.2
200
1.1
0
1.0
0.9
Output Voltage
Output Voltage VOUT(V)
400
1.3
Output Current IOUT(mA)
600
1.2
200
1.1
0
1.0
0.9
R1172x101x
R1172x101x
100
1.16
Output Current
1.12
1.08
50
0
1.04
Output Voltage
1.00
Output Voltage VOUT(V)
150
1.20
150
1.16
100
Output Current
1.12
1.08
50
0
1.04
Output Voltage
1.00
Output Current IOUT(mA)
VIN=2.0V,CIN=Ceramic 4.7μF,
COUT=Ceramic 10μF
VIN=2.0V,CIN=COUT= Ceramic 4.7μF
0.96
0.96
4
8
0
12 16 20 24 28 32 36 40
Time t(μs)
R1172x101x
1.00
0.95
Output Voltage VOUT(V)
0
Output Voltage
8 10 12 14 16 18 20
Time t(μs)
1.20
Output Current IOUT(mA)
20
Output Current
1.05
6
R1172x101x
40
1.10
4
VIN=2.0V,CIN=Ceramic 4.7μF,
COUT=Ceramic 10μF
VIN=2.0V,CIN=COUT= Ceramic 4.7μF
1.15
2
40
1.15
20
Output Current
0
1.10
1.05
Output Voltage
1.00
0.95
0.90
0.90
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
Output Current IOUT(mA)
0
Output Voltage VOUT(V)
Output Voltage
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
Output Current IOUT(mA)
Output Voltage VOUT(V)
Output Current
0 10 20 30 40 50 60 70 80 90 100
Time t(μs)
1.20
18
400
1.3
0.8
0.8
1.20
600
Output Current IOUT(mA)
VIN=2.0V,CIN=COUT= Ceramic 4.7μF
1.4
Output Voltage VOUT(V)
R1172x101x
VIN=2.0V,CIN=Ceramic 4.7μF,
COUT=Ceramic 10μF
R1172x
R1172x301x
VIN=4.0V,CIN=COUT= Ceramic 4.7μF
3.4
200
3.2
0
3.0
2.8
Output Voltage
Output Voltage VOUT(V)
Output Current
Output Current IOUT(mA)
400
3.6
3.8
2.6
600
400
3.6
Output Current
3.4
200
3.2
0
3.0
2.8
Output Voltage
2.6
0 40 80 120 160 200 240 280 320 360 400
Time t(μs)
0 40 80 120 160 200 240 280 320 360 400
Time t(μs)
R1172x301x
VIN=4.0V,CIN=Ceramic 4.7μF,
COUT=Ceramic 10μF
100
3.16
Output Current
3.12
50
3.08
0
3.04
Output Voltage
3.00
Output Voltage VOUT(V)
150
Output Current IOUT(mA)
3.20
150
3.16
100
3.08
0
4
Output Voltage
3.00
0
8 12 16 20 24 28 32 36 40
Time t(μs)
0
3.00
Output Voltage
Output Voltage VOUT(V)
20
Output Current
3.05
6
8 10 12 14 16 18 20
Time t(μs)
3.20
40
3.10
4
R1172x301x
VIN=4.0V,CIN=COUT= Ceramic 4.7μF
3.15
2
VIN=4.0V,CIN=Ceramic 4.7μF,
COUT=Ceramic 10μF
Output Current IOUT(mA)
Output Voltage VOUT(V)
0
3.04
R1172x301x
2.95
50
2.96
2.96
3.20
Output Current
3.12
40
20
3.15
Output Current
0
3.10
3.05
3.00
2.95
Output Voltage
Output Current IOUT(mA)
Output Voltage VOUT(V)
R1172x301x
VIN=4.0V,CIN=COUT= Ceramic 4.7μF
3.20
Output Current IOUT(mA)
600
Output Current IOUT(mA)
3.8
Output Voltage VOUT(V)
R1172x301x
VIN=4.0V,CIN=Ceramic 4.7μF,
COUT=Ceramic 10μF
2.90
2.90
0 40 80 120 160 200 240 280 320 360 400
Time t(μs)
0 40 80 120 160 200 240 280 320 360 400
Time t(μs)
19
R1172x
R1172x501x
5.50
200
5.25
0
5.00
4.75
Output Voltage
4.50
150
100
5.16
Output Current
5.12
50
5.08
0
5.04
Output Voltage
5.00
Output Current IOUT(mA)
Output Current
Output Voltage VOUT(V)
400
5.75
VIN=6.0V,CIN=COUT= Ceramic 4.7μF
5.20
600
Output Current IOUT(mA)
Output Voltage VOUT(V)
6.00
R1172x501x
VIN=6.0V,CIN=COUT= Ceramic 4.7μF
4.96
0
0 40 80 120 160 200 240 280 320 360 400
Time t(μs)
2
4
6
8 10 12 14 16 18 20
Time t(μs)
R1172x501x
VIN=6.0V,CIN=COUT= Ceramic 4.7μF
40
20
5.15
Output Current
0
5.10
5.05
5.00
4.95
Output Voltage
Output Current IOUT(mA)
Output Voltage VOUT(V)
5.20
4.90
0 40 80 120 160 200 240 280 320 360 400
Time t(μs)
13) Turn-on speed with CE pin control
-20 0
20
20 40 60 80 100 120 140 160 180
Time t(μs)
10
VIN=6.0V,CIN=COUT= Ceramic 4.7μF
8
8
6
6
4
4
2
2
IOUT=0mA
IOUT=100mA
IOUT=300mA
VIN(V)
0
-40 0
60
160
Time t(μs)
260
360
0
CE Input Voltage VCE(V)
IOUT=0mA
IOUT=100mA
IOUT=300mA
VCE
2.0
1.6
1.2
0.8
0.4
0.0
Output Voltage VOUT(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
R1172x501x
CE Input Voltage VCE(V)
Output Voltage VOUT(V)
R1172x081x
VIN=1.8V,CIN=COUT= Tantalum 4.7μF
R1172x
14) Turn-off speed with CE pin control
2.0
1.6
1.2
0.8
0.4
0.0
IOUT=0mA
IOUT=100mA
IOUT=300mA
VIN(V)
-0.4 0
0.6
1.6
Time t(ms)
2.8
14
VIN=6.0V,CIN=COUT= Tantalum 4.7μF
8
12
6
10
4
8
2
6
CE Input Voltage VCE(V)
VIN=1.8V,CIN=COUT= Tantalum 4.7μF
Output Voltage VOUT(V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
R1172x501D
CE Input Voltage VCE(V)
Output Voltage VOUT(V)
R1172x081D
0
IOUT=0mA
IOUT=100mA
IOUT=300mA
VIN(V)
4
2
0
-0.2 0 0.2
3.6
0.6
1.0
Time t(ms)
1.4
1.8
15) Inrush Current (IOUT=100mA, CIN=none)
1.6
CE Input Voltage
0.8
0.0
Output Voltage
600
400
200
0
Inrush Current
-40
0
40
80
Time t(μs)
120
160
2.4
VIN=2.0V,COUT= Tantalum 10μF
1.6
CE Input Voltage
0.8
0.0
Output Voltage
600
400
200
0
Inrush Current
-40
0
40
80
Time t(μs)
120
Inrush Current IVDD(mA)
VIN=2.0V,COUT= Tantalum 4.7μF
CE Input Voltage VCE ,Output Voltage VOUT(V)
2.4
R1172x081x
Inrush Current IVDD(mA)
CE Input Voltage VCE ,Output Voltage VOUT(V)
R1172x081x
160
21
R1172x
CE Input Voltage
3
2
Output Voltage
1
0
600
400
Inrush Current
200
0
-40
0
40
80
Time t(μs)
120
5
4
CE Input Voltage
3
2
Output Voltage
1
0
600
400
Inrush Current
200
0
160
-40
0
CE Input Voltage
6
4
Output Voltage
2
0
600
400
Inrush Current
200
0
-40
22
0
40
80
Time t(μs)
120
160
CE Input VoltageVCE ,Output Voltage VOUT(V)
VIN=6.0V,COUT= Ceramic 4.7μF
8
120
160
R1172x501x
Inrush Current IVDD(mA)
CE Input VoltageVCE ,Output Voltage VOUT(V)
R1172x501x
40
80
Time t(μs)
Inrush Current IVDD(mA)
4
VIN=4.0V,COUT= Ceramic 10μF
VIN=6.0V,COUT= Ceramic 10μF
8
CE Input Voltage
6
4
Output Voltage
2
0
600
Inrush Current
400
200
0
-40
0
40
80
Time t(μs)
120
160
Inrush Current IVDD(mA)
5
CE Input VoltageVCE ,Output Voltage VOUT(V)
R1172x301x
Inrush Current IVDD(mA)
CE Input Voltage VCE ,Output Voltage VOUT(V)
R1172x301x
VIN=4.0V,COUT= Ceramic 4.7μF
R1172x
ESR vs. Output Current
When using these ICs, consider the following points:
CE
VOUT
R1172xxx1B
COUT
S.A
VIN
VIN
GND
CIN
Spectrum
Analyzer
ESR
IOUT
0.8V to 3.3V Output type: COUT=4.7μF (Kyocera CM105X5R475M06AB)
5.0V Output type
: COUT=4.7μF (Kyocera CT21X5R475K06AB)
As an output capacitor for this IC, Ceramic capacitor is recommendable. However, other low ESR type
capacitor can be used with this IC.
For your reference, noise level is tested, and if the noise level is 40μV or less than 40μV, the ESR values are
plotted as stable area. Upper limit is described in the next five graphs, or ESR vs. Output Current. (Hatched area
is the stable area.)
Measurement conditions
⋅ VIN=VOUT+1V
⋅ Frequency Band: 10Hz to 1MHz
⋅ Temperature : 25°C
R1172x081x
R1172x081x
VIN=1.4V to 6.0V,
CIN=COUT=Ceramic 4.7μF
VIN=1.4V to 6.0V, CIN=Ceramic 4.7μF,
COUT=Ceramic 10μF
100
100
Topt=-40°C
1.0
10
ESR(Ω)
ESR(Ω)
Topt=85°C
Topt=85°C
10
Topt=-40°C
1.0
0.1
0.1
0.01
0.01
0
200
400
600
800
Load Current IOUT(mA)
1000
0
200
400
600
800
Load Current IOUT(mA)
1000
23
R1172x
R1172x101x
R1172x301x
VIN=1.4V to 6.0V,
CIN=COUT=Ceramic 4.7μF
VIN=3.1V to 6.0V,
CIN=COUT=Ceramic 4.7μF
100
100
Topt=-40°C
1.0
0.1
0.01
0.01
0
200
400
600
800
1000
Load Current IOUT(mA)
VIN=5.3V to 6.0V,
CIN=COUT=Ceramic 4.7μF
100
Topt=85°C
10
Topt=-40°C
1.0
0.1
0.01
0
200
400
600
800
Load Current IOUT(mA)
0
200
400
600
800
Load Current IOUT(mA)
R1172x501x
ESR(Ω)
10
ESR(Ω)
ESR(Ω)
Topt=-40°C
1.0
0.1
24
Topt=85°C
Topt=85°C
10
1000
1000
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Ricoh Europe (Netherlands) B.V.
Semiconductor Support Centre
Prof. W.H. Keesomlaan 1, 1183 DJ Amstelveen, The Netherlands
Phone: +31-20-5474-309
Ricoh International B.V. - German Branch
Semiconductor Sales and Support Centre
Oberrather Strasse 6, 40472 Düsseldorf, Germany
Phone: +49-211-6546-0
Ricoh Electronic Devices Korea Co., Ltd.
3F, Haesung Bldg, 504, Teheran-ro, Gangnam-gu, Seoul, 135-725, Korea
Phone: +82-2-2135-5700 Fax: +82-2-2051-5713
Ricoh Electronic Devices Shanghai Co., Ltd.
Room 403, No.2 Building, No.690 Bibo Road, Pu Dong New District, Shanghai 201203,
People's Republic of China
Phone: +86-21-5027-3200 Fax: +86-21-5027-3299
Ricoh Electronic Devices Shanghai Co., Ltd.
Shenzhen Branch
1205, Block D(Jinlong Building), Kingkey 100, Hongbao Road, Luohu District,
Shenzhen, China
Phone: +86-755-8348-7600 Ext 225
Ricoh Electronic Devices Co., Ltd.
Taipei office
Room 109, 10F-1, No.51, Hengyang Rd., Taipei City, Taiwan (R.O.C.)
Phone: +886-2-2313-1621/1622 Fax: +886-2-2313-1623
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