R1202x Series
STEP-UP DC/DC CONVERTER with SHUTDOWN FUNCTION
NO.EA-255-210322
OUTLINE
The R1202x Series are CMOS-based PWM step-up DC/DC converter ICs with low supply current.
Each of these ICs consists of an NMOS FET, NPN transistor, an oscillator, a PWM comparator, a voltage
reference unit, an error amplifier, a current limit circuit, an under voltage lockout circuit (UVLO), an over-voltage
protection circuit (OVP), a soft-start circuit, a Maxduty limit circuit, and a thermal shutdown protection circuit. By
simply using an inductor, a resistor, and capacitors as external components, a high-efficiency step-up DC/DC
converter can be easily configured. At the standby mode, a rectifier transistor can separate the output from the
input.
The R1202x Series include a thermal shut-down circuit and an under-voltage lockout circuit (UVLO) which
separate the output from the input to shut down the current when the overheat caused when the output is connected
to the Gnd is detected and also during the UVLO detection. As other protection functions, the R1202x Series
contain a cycle by cycle current limit circuit that limits the Lx peak current, and an over-voltage protection circuit
(OVP) that detects the output overvoltage.
The R1202x Series offer three versions: the R1202xxxxA/B versions, which are optimized for constant-voltage
power supply and the R1202xxxxD version, which is optimized to drive serial white LEDs with constant current.
While the R1202xxxxA version discharges the VOUT output to 0V at the shutdown, the R1202xxxxB version doesn’t.
The brightness of the white LEDs can be adjusted quickly by applying a PWM signal (200Hz to 300kHz) to the CE
pin.
The R1202x Series are available in DFN1616-6B and TSOT-23-6 packages.
FEATURES
• Input Voltage Range ......................................... 2.3V to 5.5V (R1202xxxxA/B)
1.8V to 5.5V (R1202xxxxD)
• Supply Current ................................................. Typ. 800µA
• Standby Current ............................................... Max. 5µA
• Feedback Voltage ............................................ 1.0V±15mV (R1202xxxxA/B)
0.2V±10mV (R1202xxxxD)
• Oscillator Frequency ........................................ Typ. 1.2MHz
• Maximum Duty Cycle ....................................... Typ. 91%
• UVLO Function ............................................... Typ.2.0V (Hys.Typ.0.2V) (R1202xxxxA/B)
Typ.1.6V (Hys.Typ.0.1V) (R1202xxxxD)
• Lx Current Limit Function ................................. Select from 350mA, 700mA
• Over Voltage Protection ................................... Select from 14V-23V (Refer the Selection Guide)
• LED dimming control for R1202xxxxD ............. by external PWM signal (Frequency 200Hz to 300kHz)
• Thermal Protection Function .......................... Typ.150ºC(Hys.Typ.50ºC)
• Built-in Auto Discharge Function ...................... R1202xxxxA
• NMOS ON Resistance ..................................... 1.35Ω
• Packages ......................................................... DFN1616-6B, TSOT-23-6
APPLICATION
• Constant Voltage Power Source for portable equipment
• OLED power supply for portable equipment
• White LED Backlight for portable equipment
1
R1202x
NO.EA-255-210322
SELECTION GUIDE
The OVP threshold voltage, current limit, package and VFB/Auto discharge are user-selectable options.
Product Name
R1202Lyz1∗-TR
R1202Nyz3∗-TR-FE
Package
Quantity per Reel
Pb Free
Halogen Free
DFN1616-6B
5,000 pcs
Yes
Yes
TSOT-23-6
3,000 pcs
Yes
Yes
y
: Designation of OVP threshold
(3) 14V : R1202xxxxA/B/D
(4) 17V : R1202xxxxA/B
(5) 19V : R1202xxxxA/B
(6) 21V : R1202xxxxA/B
(7) 23V : R1202xxxxA/B/D
z
: Designation of current limit
(1) 350mA
(2) 700mA
∗
: Designation of VFB, auto discharge function
A
B
D
VFB
1.0V
1.0V
0.2V
Auto discharge
○
×
×
Auto-discharge function quickly lowers the output voltage to 0V, when the chip enable signal is switched from the active mode
to the standby mode, by releasing the electrical charge accumulated in the external capacitor.
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R1202x
NO.EA-255-210322
BLOCK DIAGRAMS
R1202xxxxA
VIN
VFB
Err. Amp.
+
–
vref
UVLO
PWM Comp.
+
–
VOUT
LX
R
S
Q
Switch
Control
Driver
Control
Oscillator
Soft-start
Slope Compensation
OVP
Current
Limit
Current
sense
Thermal
Shutdown
∑
CE
CE
GND
R1202xxxxB
VIN
VFB
Err. Amp.
+
–
vref
UVLO
PWM Comp.
+
–
R
S
Q
Switch
Control
Driver
Control
OVP
Oscillator
Soft-start
VOUT
LX
Slope Compensation
Current
Limit
Current
sense
Thermal
Shutdown
∑
CE
CE
GND
3
R1202x
NO.EA-255-210322
R1202xxxxD
Err. Amp.
+
–
vref
UVLO
PWM Comp.
+
–
R
S
Q
Switch
Control
Driver
Control
OVP
Oscillator
PWM
Cntrl
VOUT
LX
VIN
VFB
EN
Slope Compensation
Shutdown
delay
∑
Current
Limit
Current
sense
Thermal
Shutdown
CE
CE
GND
4
R1202x
NO.EA-255-210322
PIN DESCRIPTIONS
• DFN1616-6B
Top View
6
5
• TSOT-23-6
Bottom View
4
4
5
6
2
3
3
2
4
6
(mark side)
∗
1
5
1
1
2
3
DFN1616-6B
Pin No
Symbol
Pin Description
1
CE
Chip Enable Pin ("H" Active)
2
VFB
Feedback Pin
3
LX
Switching Pin (Open Drain Output)
4
GND
5
VIN
6
VOUT
Ground Pin
Input Pin
Output Pin
∗) The tab is substrate level (GND). The tab is better to be connected to the GND, but leaving it open is also acceptable.
TSOT-23-6
Pin No
Symbol
Pin Description
1
CE
Chip Enable Pin ("H" Active)
2
VOUT
Output Pin
3
VIN
Input Pin
4
LX
Switching Pin (Open Drain Output)
5
GND
6
VFB
Ground Pin
Feedback Pin
5
R1202x
NO.EA-255-210322
ABSOLUTE MAXIMUM RATINGS
Symbol
(GND=0V)
Item
Rating
Unit
VIN
VIN Pin Voltage
-0.3 to 6.5
V
VCE
CE Pin Voltage
-0.3 to 6.5
V
VFB
VFB Pin Voltage
-0.3 to 6.5
V
VOUT
VOUT Pin Voltage
-0.3 to 25
V
VLX
LX Pin Voltage
-0.3 to 25
V
ILX
LX Pin Current
1000
mA
PD
Power Dissipation *
DFN1616-6B
(JEDEC STD. 51-7 Test Land Pattern)
2400
TSOT-23-6 (Standard Test Land Pattern)
460
mW
Tj
Junction Temperature Range
-40 to 125
°C
Tstg
Storage Temperature Range
-55 to 125
°C
∗) Refer to POWER DISSIPATION for detailed information.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and
may degrade the life time and safety for both device and system using the device in the field. The functional operation at
or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
Rating
VIN
Operating Input Voltage
Ta
Operating Temperature Range
Unit
R1202xxxxA/B
2.3 V to 5.5 V
V
R1202xxxxD
1.8 V to 5.5 V
V
−40 to 85
°C
RECOMMENDED OPERATING CONDITIONS
All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended
operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions,
even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may
receive serious damage when they continue to operate over the recommended operating conditions.
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R1202x
NO.EA-255-210322
ELECTRICAL CHARACTERISTICS
R1202x
Symbol
IDD
(Ta=25°C)
Item
Conditions
Min.
Typ.
Max.
Unit
Supply Current
VIN=5.5V , VFB=0V , LX at no load
0.8
1.2
mA
Istandby
Standby Current
VIN=5.5V , VCE=0V
1.0
5.0
µA
VUVLO1
UVLO Detect
Threshold Voltage
VIN falling
VUVLO2
UVLO Release Voltage
R1202xxxxA/B
1.9
2.0
2.1
V
R1202xxxxD
1.5
1.6
1.7
V
R1202xxxxA/B
VUVLO1
+0.2
2.3
V
R1202xxxxD
VUVLO1
+0.1
1.8
V
VIN rising
VCEH
CE Input Voltage "H"
VCEL
CE Input Voltage "L"
RCE
CE Pull Down
Resistance
VFB
VFB Voltage Accuracy
VCE=3.6V
VFB Voltage Temperature
Coefficient
VCE=3.6V, -40°C <
= Ta <
= 85°C
VFB Input Current
VIN=5.5V, VFB=0V or 5.5V
tstart
Soft-start Time
*R1202xxxxA/B
2.0
ms
RON
Driver ON Resistance
VCE=3.6V, ILX=100mA
1.35
Ω
IOFF
Driver Leakage Current
VLX=22V
ILIM
Driver Current Limit
VIN=3.6V
VF
NPN Forward Voltage
ILX=100mA
ISWOFF1
NPN Leakage Current 1
VOUT=22V, VLX=0V
10
µA
ISWOFF2
NPN Leakage Current 2
VOUT=0V, VLX=5.5V
3
µA
Oscillator Frequency
VIN=3.6V, VFB=0V
1400
kHz
∆VFB/∆Ta
IFB
fosc
VIN=5.5V
1.5
V
0.5
1200
kΩ
R1202xxxxA/B
0.985
1.000
1.015
R1202xxxxD
0.19
0.2
0.21
0.1
3.0
R1202xx1xx
250
350
450
R1202xx2xx
500
700
900
0.8
1000
1200
V
ppm/
°C
±150
-0.1
V
µA
µA
mA
V
7
R1202x
NO.EA-255-210322
(Ta=25ºC)
Symbol
Maxduty
VOVP1
Item
Maximum Duty Cycle
OVP Detect Voltage
Conditions
Min.
Typ.
86
91
R1202x3xxA/B/D
13.2
14
14.8
R1202x4xxA/B
16.2
17
17.8
R1202x5xxA/B
18.2
19
19.8
R1202x6xxA/B
20.2
21
21.8
R1202x7xxA/B/D
22.2
23
VOVP1
-1.1
VOVP1
-1.3
VOVP1
-1.4
VOVP1
-1.5
VOVP1
-1.7
23.8
VIN=3.6V, VFB=0V
VIN=3.6V,
VOUT rising
R1202x3xxA/B/D
R1202x4xxA/B
VOVP2
OVP Release Voltage
VIN=3.6V,
VOUT falling
R1202x5xxA/B
R1202x6xxA/B
R1202x7xxA/B/D
Max.
Unit
%
V
V
TTSD
Thermal Shutdown
Detect Temperature
VIN=3.6V
150
°C
TTSR
Thermal Shutdown
Release Temperature
VIN=3.6V
100
°C
8
R1202x
NO.EA-255-210322
THEORY OF OPERATION
Operation of Step-Up DC/DC Converter and Output Current
i2
VIN
IOUT
Diode
L
VOUT
i1
Lx Tr
CL
GND
Discontinuous mode
Continuous mode
IL
ILmax
IL
ILmax
ILmin
ILmin
topen
t
toff
ton
T=1/fosc
t
ton
toff
T=1/fosc
There are two operation modes of the step-up PWM control-DC/DC converter. That is the continuous mode and
discontinuous mode by the continuousness inductor.
When the transistor turns ON, the voltage of inductor L becomes equal to VIN voltage. The increase value of inductor
current (i1) will be
∆i1 = VIN × ton / L ........................................................................................................... Formula 1
As the step-up circuit, during the OFF time (when the transistor turns OFF) the voltage is continually supply from
the power supply. The decrease value of inductor current (i2) will be
∆i2 = (VOUT − VIN) × topen / L ........................................................................................... Formula 2
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R1202x
NO.EA-255-210322
At the PWM control-method, the inductor current become continuously when topen=toff, the DC/DC converter
operate as the continuous mode.
In the continuous mode, the variation of current of i1 and i2 is same at regular condition.
VIN × ton / L = (VOUT - VIN) × toff / L ................................................................................... Formula 3
The duty at continuous mode will be
duty (%)= ton / (ton + toff) = (VOUT - VIN) / VOUT ................................................................. Formula 4
The average of inductor current at tf = toff will be
IL(Ave.) = VIN × ton / (2 × L) ............................................................................................ Formula 5
If the input voltage = output voltage, the IOUT will be
IOUT = VIN2 × ton / (2 × L × VOUT) ....................................................................................... Formula 6
If the IOUT value is large than above the calculated value (Formula 6), it will become the continuous mode, at this
status, the peak current (ILmax) of inductor will be
ILmax = IOUT × VOUT / VIN + VIN × ton / (2 × L) .................................................................... Formula 7
ILmax = IOUT × VOUT / VIN + VIN × T × (VOUT - VIN) / (2 × L × VOUT)....................................... Formula 8
The peak current value is larger than the IOUT value. In case of this, selecting the condition of the input and the
output and the external components by considering of ILmax value.
The explanation above is based on the ideal calculation, and the loss caused by LX switch and the external
components are not included.
The actual maximum output current will be between 50% and 80% by the above calculations. Especially, when the
IL is large or VIN is low, the loss of VIN is generated with on resistance of the switch. Moreover, it is necessary to
consider Vf of the diode (approximately 0.8V) about VOUT.
10
R1202x
NO.EA-255-210322
Soft-Start
R1202xxxxA/B
After inputting "H" to the CE pin, the error amplifier in the DC/DC converter starts from 0V and slowly rises with
a time (typ. 2ms) until the set output voltage is reached.
However, immediately after startup, (the input voltage (VIN) – NPN Forward voltage) is output without the soft
start control.
R1202xxxxD
By gradually increasing the duty of the PWM signal input to the CE pin, the LED current (luminance) can be
slowly increased in the same way as the soft start operation.
Protect Function
If the over current is detected, internal mosfet will turn-off soon. At the next operating period, mosfet will turn-on
again and continue to watch the current.
The UVLO function and the thermal shutdown function are turned off the NMOS-driver and NPN-transister when
the VIN decreases more than the UVLO detect threshold voltage or the inside of IC exceeds the thermal shutdown
detect temperature, and reset IC when the VIN rises more than the UVLO release voltage or the inside of IC falls
below the thermal shutdown release temperature, and restart the operation.
Shutdown
At standby mode, the output is completely separated from the input and shutdown by the NPN transistor of
internal IC. However, the leakage current is generated when the LX pin voltage is higher than VIN pin voltage at
standby mode.
R1202xxxxA (with auto discharge function): In the term of standby mode, the switch between VOUT to GND is
turned ON and output capacitor is discharged.
11
R1202x
NO.EA-255-210322
APPLICATION INFORMATION
Typical Applications
L1
10µH~22µH
L1
10µH~22µH
C1
1µF
C1
1µF
VIN
LX
CE
VOUT
R2
GND
VFB
C3
R3
C2
1µF
VIN
LX
CE
VOUT
GND
VFB
R1
R1202xxxxA/B
C2
0.22µF
R1
10Ω
R1202xxxxD
Selection of Inductor
The peak current of the inductor at normal mode can be estimated as the next formula when the efficiency is 80%.
ILmax = 1.25 × IOUT × VOUT / VIN + 0.5 × VIN × (VOUT - VIN) / (L × VOUT × fosc)
In the case of start-up or dimming control by CE pin, inductor transient current flows, and the peak current of it
must be equal or less than the current limit of the IC. The peak current should not beyond the rated current of
the inductor. The recommended inductance value is 10µH -22µH.
Table 1 Peak current value in each condition
VIN (V)
3
3
3
3
Condition
VOUT (V) IOUT (mA)
14
20
14
20
21
20
21
20
L (µH)
10
22
10
22
ILmax (mA)
215
160
280
225
Table 2 Recommended inductors
L (µH)
10
10
10
10
10
22
22
22
22
Part No.
LQH32CN100K53
LQH2MC100K02
VLF3010A-100
VLS252010-100
VLF403212MT-100M
LQH32CN220K53
LQH2MC220K02
VLF3010A-220
VLF504015MT-220M
Rated current (mA)
450
225
490
520
900
250
185
330
930
Size (mm)
3.2x2.5x1.55
2.0x1.6x0.9
2.8x2.6x0.9
2.5x2.0x1.0
4.0×3.2×1.2
3.2x2.5x1.55
2.0x1.6x0.9
2.8x2.6x0.9
5.0×4.0×1.5
12
R1202x
NO.EA-255-210322
Selection of Capacitor
Set 1µF or more value bypass capacitor C1 between VIN pin and GND pin as close as possible.
R1202xxxxA/R1202xxxxB
Set 1µF – 4.7µF or more capacitor C2 between VOUT and GND pin.
Table 3-A Recommended components for R1202xxxxA/R1202xxxxB
C1
C2
C3
R1
R2
R3
Rated voltage(V)
Part No.
6.3
25
25
CM105B105K06
GRM21BR11E105K
22pF
For VOUT Setting
For VOUT Setting
2kΩ
If the transient drop of output voltage by the load fluctuation is large and exceeds the allowable range in above
setting, refer to Table 3-B to change the capacitors of C2 and C3 for the response improvement and the transient
voltage drop reduction.
Table 3-B Recommended components for R1202xxxxA/R1202xxxxB
C1
C2
C3
R1
R2
R3
Rated voltage(V)
Part No.
6.3
50
25
CM105B105K06
GRM31CR71H475M
220pF
For VOUT Setting
For VOUT Setting
2kΩ
R1202xxxxD
Set 0.22µF or more capacitor C2 between VOUT and GND pin.
The rated voltage of C2 should be 25V or more.
Table 4 Recommended components for R1202xxxxD
C1
C2
Rated voltage(V)
Part No.
6.3
25
CM105B105K06
GRM21BR11E224
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R1202x
NO.EA-255-210322
External Components Setting
If the spike noise of VOUT may be large for R1202xxxxA/B, the spike noise may be picked into VFB pin and make
the operation unstable. In this case, use a R3 of the resistance value in the range from 1kΩ to 5kΩ to reduce a
noise level of VFB.
The Method of Output Voltage Setting (R1202xxxxA/B)
The output voltage (VOUT) can be calculated with divider resistors (R1 and R2) values as the following formula:
Output Voltage (VOUT) = VFB × (R1 + R2) / R1
The total value of R1 and R2 should be equal or less than 300kΩ. Make the VIN and GND line sufficient. The
large current flows through the VIN and GND line due to the switching. If this impedance (VIN and GND line) is
high, the internal voltage of the IC may shift by the switching current, and the operating may become unstable.
Moreover, when the built-in LX switch is turn OFF, the spike noise caused by the inductor may be generated. As
a result of this, recommendation voltage rating of capacitor (C2) value is equal 1.5 times larger or more than the
setting output voltage.
LED Current setting (R1202xxxxD)
When CE pin input is "H" (Duty=100%), LED current can be set with feedback resistor (R1)
ILED = VFB / R1
LED Dimming Control (R1202xxxxD)
The LED brightness can be controlled by inputting the PWM signal to the CE pin. If the CE pin input is "L" in the
fixed time (Typ.0.5ms), the IC becomes the standby mode and turns OFF LEDs.
The current of LEDs can be controlled by Duty of the PWM signal of the input CE pin. The current of LEDs when
High-Duty of the CE input is "Hduty" reaches the value as calculatable following formula.
ILED = Hduty × VFB / R1
The frequency of the PWM signal is using the range between 200Hz to 300kHz.
When controlling the LED brightness by the PWM signal of 20kHz or less, the increasing or decreasing of the
inductor current might be make a sounds in the hearable sound wave area. In that case, please use the PWM
signal in the high frequency area.
CE
Hduty
VFB
R1
Dimming control by CE pin input
14
R1202x
NO.EA-255-210322
ILED accuracy (R1202xxxxD)
LED current (ILED) is affected by the offset voltage of the error amplifier in the DC/DC converter.
LED might turn off due to the offset voltage variation, when brightness is controlled by low PWM duty cycle.
It is recommended to input PWM signal with 10% or more duty cycle to prevented LED turn off(Ta=25℃).
The table below shows the ILED accuracy at low PWM duty cycle input (low brightness).
ILED accuracy when low PWM Duty is applied (R1 = 10 Ω)
ILED Max.
PWM Duty applied to CE Pin
ILED Min.
10% (Frequency = 20kHz to 300kHz)
0.1mA (1)
5.1mA(1)
(1) Design guaranteed value (Ta = 25 ºC)
15
R1202x
NO.EA-255-210322
TECHNICAL NOTES
Current Path on PCB
The current paths in an application circuit are shown in Fig. 1 and 2.
A current flows through the paths shown in Fig. 1 at the time of MOSFET-ON, and shown in Fig. 2 at the time of
MOSFET-OFF. In the paths pointed with red arrows in Fig. 2, current flows just in MOSFET-ON period or just in
MOSFET-OFF period. Parasitic impedance / inductance and the capacitance of these paths influence stability of
the system and cause noise outbreak. So please minimize this side effect. In addition, please shorten the wiring of
other current paths shown in Fig. 1 and 2 except for the paths of LED load.
Layout Guide for PCB
⋅
Please shorten the wiring of the input capacitor (C1) between VIN pin and GND pin of IC. The GND pin should be
connected to the strong GND plane.
⋅
The area of LX land pattern should be smaller.
⋅
Please put output capacitor (C2) close to the VOUT pin.
⋅
Please make the GND side of output capacitor (C2) close to the GND pin of IC.
MOSFET-ON
Load
Load
Fig. 1
Fig. 2
MOSFET-OFF
16
R1202x
NO.EA-255-210322
PCB Layout
・PKG:DFN1616-6B pin
R1202LxxxA/R1202LxxxB/R1202LxxxD typical board layout
Top Layer
Back Layer
・PKG: TSOT-23-6 pin
R1202NxxxA/R1202NxxxB/R1202NxxxD Typical Board Layout
Top Layer
Back Layer
U1-● indicates the position of No.1 pin.
17
R1202x
NO.EA-255-210322
TYPICAL CHARACTERISTICS
1) Efficiency vs. Output Current (R1202N723A)
VOUT=10V, L=22µH (LQH32CN220K53)
90
90
85
85
80
80
Efficiency (%)
Efficiency (%)
VOUT=10V, L=10µH (LQH32CN100K53)
75
70
65
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
75
70
65
55
50
50
0
5
10
15
Output Current (mA)
0
20
85
85
80
80
Efficiency (%)
90
75
70
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
15
20
75
70
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
65
60
55
50
50
0
5
10
15
20
0
5
Output Current (mA)
85
85
80
80
Efficiency (%)
90
75
70
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
5
10
Output Current (mA)
20
15
75
70
65
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
50
0
15
VOUT=20V, L=22µH (LQH32CN220K53)
90
65
10
Output Current (mA)
VOUT=20V, L=10µH (LQH32CN100K53)
Efficiency (%)
10
VOUT=15V, L=22µH (LQH32CN220K53)
90
65
5
Output Current (mA)
VOUT=15V, L=10µH(LQH32CN100K53)
Efficiency (%)
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
20
50
0
5
10
15
20
Output Current (mA)
18
R1202x
NO.EA-255-210322
VOUT=20V, VIN=3.6V
85
Efficiency (%)
80
75
70
65
LQH32CN100k53L(3.2×2.5×1.55)
60
VLF3010AT-100MR33(3.0×2.8×1.0)
55
LQH2MCN100K02(2.0×1.6×0.9)
50
0
5
10
15
20
Output Current (mA)
2) Efficiency vs. Output Current (R1202N713D)
4LED, L=22µH (LQH32CN220K53)
90
90
85
85
80
80
Efficiency (%)
Efficiency (%)
4LED, L=10µH (LQH32CN100K53)
75
70
65
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
70
65
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
50
50
0
5
10
15
20
0
15
Output Current ILED (mA)
5LED, L=10µH (LQH32CN100K53)
5LED, L=22µH (LQH32CN220K53)
90
90
85
85
80
80
75
70
65
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
50
0
10
5
Output Current ILED (mA)
Efficiency (%)
Efficiency (%)
75
5
10
15
Output Current ILED (mA)
75
70
65
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
20
20
50
0
5
10
15
Output Current ILED (mA)
20
19
R1202x
NO.EA-255-210322
3) Efficiency vs. Output Current (R1202N713D)
5LED, VIN=3.6V
85
80
Efficiency (%)
75
70
65
60
LQH32CN100k53L(3.2×2.5×1.55)
VLF3010AT-100MR33(3.0×2.8×1.0)
LQH2MCN100K02(2.0×1.6×0.9)
55
50
0
5
10
15
20
Output Current ILED (mA)
4) Output Voltage vs. Output Current (R1202N723A)
VOUT=10V, L=10µH (LQH32CN100K53)
10.8
10.8
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
10.4
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
10.6
Output Voltage (V)
10.6
Output Voltage (V)
VOUT=10V, L=22µH (LQH32CN220K53)
10.2
10
9.8
10.4
10.2
10
9.8
9.6
9.6
0
50
100
150
200
0
50
Output Current (mA)
VOUT=15V, L=10µH (LQH32CN100K53)
16.4
200
16.4
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
16
Output Voltage (V)
Output Voltage (V)
15.6
150
VOUT=15V, L=22µH (LQH32CN220K53)
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
16
100
Output Current (mA)
15.2
14.8
14.4
15.6
15.2
14.8
14.4
14
14
0
30
60
Output Current (mA)
90
120
0
30
60
90
120
Output Current (mA)
20
R1202x
NO.EA-255-210322
VOUT=20V, L=10µH (LQH32CN100K53)
VOUT=20V, L=22µH (LQH32CN220K53)
21.2
21.2
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
20.6
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
20.9
Output Voltage (V)
Output Voltage (V)
20.9
20.3
20
19.7
20.6
20.3
20
19.7
19.4
19.4
0
25
50
75
0
100
20
Output Current (mA)
40
60
80
100
Output Current (mA)
VOUT=20V, VIN=3.6V
20.5
Output Voltage (V)
20.3
20.1
19.9
LQH32CN100k53L (3.2×2.5×1.55)
19.7
VLF3010AT-100MR33 (2.8×2.6×0.9)
LQH2MCN100K02 (2.0×1.6×0.9)
19.5
0
10
20
30
40
50
Output Current (mA)
5) Maxduty vs. ILED
6) OVP Output Waveform
R1202N713D
25
25
20
24
Output Voltage (V)
ILED (mA)
R1202N713D
15
10
200Hz
10kHz
5
300kHz
0
0
20
40
60
Duty (%)
80
100
23
22
21
20
-50
-30
-10
10
Time (ms)
30
50
21
R1202x
NO.EA-255-210322
7) Waveform (5LED)
R1202N713D (CE Freq=200Hz)
R1202N713D (CE Freq=10KHz)
10
5
-5
0
Vout
CE
-5
0
Time (ms)
5
-5
-500
10
55
5
-5
0
-20
ILED
-5
Diode Forward Voltage (V)
10
ILED (mA)
25
10
0
Time [µs]
0.5
-20
-35
500
250
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
-35
-0.5
0
Time (µs)
ILED
0.95
40
15
-1
-250
CE
8) Diode Forward Voltage vs. Temperature
20
CE
-5
Vout
R1202N713D (CE Freq=300KHz)
Vout
10
5
0
-35
-10
25
10
-20
ILED
-5
Output Voltage (V)
CE Voltage (V)
Output Voltage (V)
CE Voltage (V)
ILED (mA)
Output Voltage (V)
CE Voltage (V)
25
10
40
15
ILED (mA)
40
15
55
20
55
20
-40
1
-15
10
35
60
85
Temperature Ta (°C)
9) Standby Current vs. Temperature
10) Supply Current lin vs. Temperature
1000
900
Supplay Current Iin[µA]
1.0
Standby Current(uA)
0.8
0.6
0.4
0.2
0.0
800
700
600
500
400
300
200
100
-40
-15
10
35
60
Temperature Ta(°C)
85
0
-40
-15
10
35
60
85
Temperature Ta (°C)
22
R1202x
NO.EA-255-210322
11) UVLO Voltage vs. Temperature
R1202xxxxA/B
R1202xxxxD
2.25
1.75
1.70
2.15
UVLO Voltage(V)
UVLO Voltage (V)
2.20
2.10
2.05
2.00
1.95
1.65
1.60
1.55
1.50
1.90
1.85
1.45
-40
-15
10
35
60
85
-40
-15
10
Temperature Ta (°C)
35
60
85
Temperature Ta (°C)
12) VFB Voltage vs. Temperature
R1202xxxxD
1.050
0.210
1.030
0.206
0.204
0.208
VFB Voltage (V)
VFB Voltage (V)
R1202xxxxA/B
1.010
0.990
0.970
0.202
0.200
0.198
0.196
0.194
0.192
0.190
0.950
-40
-15
10
35
Temperature Ta (°C)
60
-40
85
-15
10
35
60
85
Temperature Ta (°C)
13) Switch ON Resistance RON vs. Temperature
14) OVP Voltage vs. Temperature
1.9
25
1.7
24
1.5
OVP Voltage (V)
Switch On Resistance RON (Ω)
R1202x7xxx
1.3
1.1
0.9
23
22
OVP Detect
21
OVP Release
20
0.7
0.5
-40
-15
10
35
Temperature Ta (°C)
60
85
19
-40
-15
10
35
60
85
Temperature Ta (°C)
23
R1202x
NO.EA-255-210322
15) Lx Limit Current vs. Temperature
R1202xx1xx
R1202xx2xx
900
500
400
Vin=2.8V
850
Vin=3.6V
Vin=5.5V
Vin=2.8V
800
Vin=3.6V
Vin=5.5V
Lx Limit Current (mA)
Lx Limit Current (mA)
450
350
300
250
750
700
650
600
550
500
200
-40
-15
10
35
-40
85
60
-15
35
60
85
Temperature Ta (°C)
Temperature Ta (°C)
16) Frequency Fosc vs. Temperature
17) MaxDuty vs. Temperature
100
1400
Vin=1.8V
1350
98
Vin=3.6V
1300
1250
1200
1150
94
92
90
1100
88
1050
86
1000
-15
-40
10
60
35
Vin=1.8V
Vin=3.6V
Vin=5.5V
96
Vin=5.5V
MXDUTY (%)
Frequency Fosc (kHz)
10
85
Temperature Ta (°C)
84
-40
-15
10
35
60
85
Temperature Ta (°C)
18) Thermal Shutdown Detect / Release Temperature vs. Input Voltage
200
Temperature (°C)
180
Thermal Shutdown Detect
160
140
120
Thermal Shutdown Release
100
80
60
1.5
2
2.5
3
3.5 4
VIN (V)
4.5
5
5.5
6
24
R1202x
NO.EA-255-210322
19) Inductor Current (output-GND short)
5LED(VIN=3V)
R1202N713D
5LED(VIN=3V)
R1202N723D
0.5
1
0.45
Inductor Current (A)
0.4
Inductor Current (A)
0.9
IL
0.35
0.3
0.25
0.2
0.15
IL
0.8
0.7
0.6
0.5
0.4
0.3
0.1
0.2
0.05
0.1
0
0
-5
-4
-3
-2
-1
0
1
2
3
4
5
-5
-4
-3
-2
TIme (µs)
1
2
3
4
5
5LED(VIN=3.6V)
R1202N723D
0.5
1
0.45
0.9
IL
0.4
0.8
0.35
0.7
Inductor Current (A)
Inductor Current (A)
0
TIme (µs)
5LED(VIN=3.6V)
R1202N713D
0.3
0.25
0.2
0.15
0.1
0.05
IL
0.6
0.5
0.4
0.3
0.2
0.1
0
-5
-4
-3
-2
-1 0 1
TIme (µs)
2
3
4
5
0
-5
-4
-3
-2
5LED(VIN=4.2V)
R1202N713D
-1 0 1
TIme (µs)
2
3
4
5
5LED(VIN=4.2V)
R1202N723D
0.5
1
0.45
0.9
IL
IL
0.8
Inductor Current (A)
0.4
Inductor Current (A)
-1
0.35
0.3
0.25
0.2
0.15
0.7
0.6
0.5
0.4
0.3
0.1
0.2
0.05
0.1
0
0
-5
-4
-3
-2
-1 0 1
TIme (µs)
2
3
4
5
-5
-4
-3
-2
-1 0 1
TIme (µs)
2
3
4
5
25
R1202x
NO.EA-255-210322
20) Load Transient Response
VIN = 3.6 V, VOUT = 15 V IOUT = 0 mA ⇔ 30 mA
L = 10 µH Setting：Table 3-A
L = 22 µH Setting：Table 3-A
L =10 µH
Setting：Table 3-B
26
R1202x
NO.EA-255-210322
L = 22 µH Setting：Table 3-B
27
POWER DISSIPATION
DFN1616-6B
Ver. A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following measurement conditions are based on JEDEC STD. 51-7.
Measurement Conditions
Item
Measurement Conditions
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions
76.2 mm × 114.3 mm × 0.8 mm
Copper Ratio
Outer Layer (First Layer): Less than 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square
Through-holes
φ 0.2 mm × 15 pcs
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Item
Measurement Result
Power Dissipation
2400 mW
Thermal Resistance (θja)
θja = 41°C/W
Thermal Characterization Parameter (ψjt)
ψjt = 11°C/W
θja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
3000
2400
Power Dissipation PD (mW)
2500
2000
1500
1000
500
0
0
25
50
75 85
100
125
Ambient Temperature (°C)
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
i
PACKAGE DIMENSIONS
DFN1616-6B
Ver. A
1.30±0.05
INDEX
4
∗
0.4max.
3
0.1±0.05
6
0.25±0.05
0.05
(3X0.15)
B
1.60
X4
1.60
0.70±0.05
A
0.5
0.20±0.05
1
0.05 M AB
Bottom View
S
0.05 S
DFN1616-6B Package Dimensions (Unit: mm)
*
∗ The tab on the bottom of the package shown by blue circle is a substrate potential (GND). It is recommended that this
tab be connected to the ground plane pin on the board but it is possible to leave the tab floating.
i
POWER DISSIPATION
TSOT-23-6
Ver. A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following conditions are used in this measurement.
Measurement Conditions
Item
Standard Test Land Pattern
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Double-Sided Board)
Board Dimensions
40 mm × 40 mm × 1.6 mm
Top Side: Approx. 50%
Copper Ratio
Bottom Side: Approx. 50%
φ 0.5 mm × 44 pcs
Through-holes
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Item
Standard Test Land Pattern
Power Dissipation
460 mW
Thermal Resistance (θja)
θja = 217°C/W
Thermal Characterization Parameter (ψjt)
ψjt = 40°C/W
θja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
600
Power Dissipation PD (mW)
500
460
400
300
200
100
0
0
25
50
75 85
100
125
Ambient Temperature (°C)
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
i
PACKAGE DIMENSIONS
TSOT-23-6
+0.100
0.125-0.025
2.9±0.2
5
4
2
3
+0.10
0.4-0.05
0.85±0.10
0.95
S
0.12 M
0 ∼ 0.1
1
2.8±0.2
+0.2
1.6-0.1
6
0.4±0.2
Ver. A
0.10 S
TSOT-23-6 Package Dimensions (Unit: mm)
0∼15°
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refer to Ricoh sales representatives for the latest information thereon.
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