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R1204N313B-TR-FE

R1204N313B-TR-FE

  • 厂商:

    RICOH(理光)

  • 封装:

    SOT23-6

  • 描述:

    STEP-UP DC/DC CONVERTER WITH SHU

  • 数据手册
  • 价格&库存
R1204N313B-TR-FE 数据手册
R1204x Series Step-up DC/DC Converter with Shutdown Function No. EA-284-180511 OUTLINE The R1204x is a low supply current PWM step-up DC/DC converter. Internally, a single IC consists of an NMOS FET, an oscillator, a PWM comparator, a voltage reference unit, an error amplifier, a current limit circuit, an under voltage lockout circuit (UVLO), an over-voltage protection circuit (OVP), a soft-start circuit, a maximum duty cycle limit circuit, and a thermal shutdown protection circuit. By simply using an inductor, a resistor, capacitors and a diode as external components, a high-efficiency step-up DC/DC converter can be easily configured. As protection functions, the IC contains a thermal shutdown protection circuit, a current limit circuit, an OVP circuit, and an UVLO circuit. A thermal shutdown circuit detects overheating of the ICs and stops the operation to protect it from damage. A current limit circuit limits the peak current of Lx, and an OVP circuit detects the over voltage of output, and an UVLO circuit detects the low input voltage. The R1204x provides the R1204xxxA/D/G/H versions, which are optimized for serial driving of white LEDs with constant current, and the R1204xxxB/C/E/F versions, which are optimized for constant voltage driving. Among the R1204xxxB/C/E/F versions, only the R1204xxxC/F versions are equipped with PWM/VFM auto-switching controls. The LED current can be determined by the value of current setting resistor. The brightness of the LEDs can be quickly adjusted by applying a PWM signal (200 Hz to 300 kHz) to the CE pin. The R1204x is available in DFN(PLP)1820-6 and TSOT-23-6 packages. FEATURES                Input Voltage Range.......................................... 2.3 V to 5.5 V Supply Current .................................................. Typ. 800 µA Standby Current ................................................ Max. 5 µA Feedback Voltage ............................................. 0.2 V ±10 mV (R1204xxxxA/D) 0.4 V ±10 mV (R1204xxxxG/H) V ±15 mV (R1204xxxxB/C/E/F) Lx Current Limit Function .................................. Min. 700 mA Over Voltage Protection .................................... 23 V, 33 V, 42 V (±1.5 V) Oscillator Frequency ......................................... Typ. 1.0 MHz (R1204xxxxA/B/C/G) Typ. 750 kHz (R1204xxxxD/E/F/H) Maximum Duty Cycle ........................................ Min. 91% (R1204xxxxA/B/C/G) Min. 92% (R1204xxxxD/E/F/H) FET ON Resistance .......................................... Typ. 0.8 Ω UVLO Function Thermal Protection Function LED Dimming Control for R1204xxxxA/D ......... by external PWM signal (200 Hz to 300 kHz frequency) Packages .......................................................... DFN(PLP)1820-6, TSOT-23-6 Recommended Bypass Capacitor .................... 1.0 µF APPLICATIONS    Constant voltage power source for hand-held equipment OLED power supply for hand-held equipment White LED driver for hand-held equipment 1 R1204x No. EA-284-180511 SELECTION GUIDE The package type, the OVP detector threshold, the feedback voltage and the PWM//VFM auto-switching control are user- selectable options as described below. Selection Guide Product Name R1204Kxy2z-TR R1204Nxy3z-TR-FE Package Quantity per Reel Pb Free Halogen Free DFN(PLP)1820-6 5,000 pcs Yes Yes TSOT-23-6 3,000 pcs Yes Yes x: OVP Detector Threshold 1: 23 V 2: 33 V 3: 42 V y: Current Limit 1: Typ. 900 mA z: Feedback Voltage, Oscillator Frequency, PWM/VFM Auto-Switching Control 2 z Feedback Voltage A B C D E F G H Typ. 0.2 V Typ. 1 V Typ. 1 V Typ. 0.2 V Typ. 1 V Typ. 1 V Typ. 0.4 V Oscillator Frequency Typ. 1 MHz Typ. 750 kHz Typ. 1 MHz Typ. 750 kHz PWM/VFM Auto-Switching Control No No Yes No No Yes No R1204x No. EA-284-180511 BLOCK DIAGRAMS VFB VIN Lx V OUT UVLO Err. Amp. PWM Comp. + + – R – Q S vref Oscillator Soft-start Slope Compensation Driver Control OVP EN Thermal Shutdow n Shutdow n delay ∑ CE Current sense PWM Control Current Limit CE R1204xxxxA/D/G/H Block Diagram VFB VIN Lx V OUT UVLO Err. Amp. PWM Comp. + + – – R Q S vref Oscillator Soft-start Slope Compensation Driver Control OVP Thermal Shutdow n ∑ Current sense CE Current Limit CE GND R1204xxxxB/E Block Diagram 3 R1204x No. EA-284-180511 VFB VIN UVLO Err. Amp. PWM Comp. + + – – CE Lx VFM Control R Q S vref Oscillator Soft-start Slope Compensation Driver Control OVP Thermal Shutdow n Current sense ∑ Current Limit CE GND R1204xxxxC/F Block Diagram 4 V OUT R1204x No. EA-284-180511 PIN DESCRIPTIONS Bottom View Top View 5 6 4 4 5 6 6 5 4 (mark side) 1 2 3 3 2 1 1 DFN(PLP)1820-6 Pin Configuration DFN(PLP)1820-6 Pin Description Pin No Symbol 2 3 TSOT-23-6 Pin Configuration Description 1 VOUT Output Pin 2 LX 3 GND 4 VIN Input Pin 5 CE Chip Enable Pin, Active-high 6 VFB Feedback Pin Switching Pin, Open Drain Output Ground Pin The exposed tab is substrate level (GND). It is recommended that the exposed tab be connected to the ground plane on the board or otherwise be left open. TSOT-23-6 Pin Description Pin No Symbol Description 1 LX Switching Pin, Open Drain Output 2 GND 3 VFB Feedback Pin 4 CE Chip Enable Pin, Active-high 5 VOUT 6 VIN Ground Pin Output Pin Input Pin 5 R1204x No. EA-284-180511 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings (GND = 0 V) Symbol Parameter Rating Unit VIN VIN Pin Voltage −0.3 to 6.5 V VCE CE Pin Voltage −0.3 to 6.5 V VFB VFB Pin Voltage −0.3 to 6.5 V VOUT VOUT Pin Voltage −0.3 to 48 V VLX LX Pin Voltage −0.3 to 48 V ILX LX Pin Current 1200 mA PD Power Dissipation(1) Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C DFN(PLP)1820-6 JEDEC STD. 51-7 2200 TSOT-23-6 Standard Test Land Pattern 460 mW ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Parameter Rating Unit VIN Input Voltage 2.3 to 5.5 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such ratings by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) 6 Refer to POWER DISSIPATION for detailed information. R1204x No. EA-284-180511 ELECTRICAL CHARACTERISTICS R1204xxxxx Electrical Characteristics Symbol Parameter Test Conditions/Comments IDD Supply Current VIN = 5.5 V, VFB = 0 V, LX at no load Istandby Standby Current VIN = 5.5 V, VCE = 0 V VUVLO1 UVLO Detector Threshold VIN falling VUVLO2 UVLO Released Voltage VIN rising VCEH VCEL CE Input Voltage "H" CE Input Voltage "L" VIN = 5.5 V VIN = 2.3 V RCE CE Pull Down Resistance VIN = 3.6 V VFB VFB Voltage Accuracy IFB VFB Input Current VIN = 5.5 V, VFB = 0 V or 5.5 V Tstart RON Soft-start Time FET ON Resistance VIN = 3.6 V, R1204xxxxB/C/E/F VIN = 3.6 V, ILX = 100 mA ILXLEAK FET Leakage Current VLX = 40 V ILXLIM FET Current Limit VIN = 3.6 V fosc Oscillator Frequency Maxduty VOVP1 Oscillator Maximum Duty Cycle OVP Detector Threshold 1.9 OVP Released Voltage TTSR Thermal Shutdown Temperature Thermal Shutdown Released Temperature 1.0 5.0 2.0 2.1 0.5 R1204xxxxA/B/D/E/G/H 1200 R1204xxxxC/F 600 R1204xxxxA/D 0.19 0.2 0.21 VIN = 3.6 V R1204xxxxG/H 0.39 0.4 0.41 R1204xxxxB/C/E/F 0.985 1.000 1.015 VIN = 3.6 V, R1204xxxxA/B/C/G VFB = 0 V R1204xxxxD/E/F/H VIN = 3.6 V, R1204xxxxA/B/C/G VFB = 0 V R1204xxxxD/E/F/H R1204x1xxx VIN = 3.6 V, R1204x2xxx VOUT rising R1204x3xxx VIN = 3.6 V, R1204x2xxx VOUT falling −0.1 µA V V 1.5 R1204x3xxx TTSD Typ. 0.8 VUVLO1 +0.1 R1204x1xxx VOVP2 Min. (Ta = 25ºC) Max. Unit mA V V kΩ V 0.1 µA ms Ω 3.0 µA mA MHz kHz % % 10 0.8 700 0.9 675 91 92 22 900 1.0 750 1100 1.1 825 23 24.0 31.5 40.2 33 42 VOVP1 −0.6 34.5 43.8 VOVP1 −1.2 VOVP1 −2.4 V V VIN = 3.6 V 150 °C VIN = 3.6 V 100 °C All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25ºC). 7 R1204x No. EA-284-180511 THEORY OF OPERATION Operation of Step-Up DC/DC Converter and Output Current i2 IOUT VOUT Diode L VIN i1 Lx Tr CL GND Discontinuous mode Continuous mode ILmax IL IL ILmax ILmin ILmin topen t toff ton T=1/fosc t ton toff T=1/fosc There are two operation modes of the step-up PWM control-DC/DC converter. That is the continuous mode and discontinuous mode by the continuousness inductor. When the transistor turns ON, the voltage of inductor L becomes equal to VIN voltage. The increase value of inductor current (i1) will be ∆i1 = VIN × ton / L ............................................................................................................................ Formula 1 As the step-up circuit, during the OFF time (when the transistor turns OFF) the voltage is continually supply from the power supply. The decrease value of inductor current (i2) will be ∆i2 = (VOUT − VIN) × topen / L .......................................................................................................... Formula 2 8 R1204x No. EA-284-180511 At the PWM control-method, the inductor current become continuously when topen = toff, the DC/DC converter operate as the continuous mode. In the continuous mode, the variation of current of i1 and i2 is same at regular condition. VIN × ton / L = (VOUT - VIN) × toff / L ................................................................................................. Formula 3 The duty at continuous mode will be duty (%) = ton / (ton + toff) = (VOUT - VIN) / VOUT ............................................................................. Formula 4 The average of inductor current at tf = toff will be IL (Ave.) = VIN × ton / (2 × L) ........................................................................................................... Formula 5 If the input voltage = output voltage, the IOUT will be IOUT = VIN2 × ton / (2 × L × VOUT) ...................................................................................................... Formula 6 If the IOUT value is large than above the calculated value (Formula 6), it will become the continuous mode, at this status, the peak current (ILMAX) of inductor will be ILMAX = IOUT × VOUT / VIN + VIN × ton / (2 × L) .................................................................................... Formula 7 ILMAX = IOUT × VOUT / VIN + VIN × T × (VOUT - VIN) / (2 × L × VOUT) ...................................................... Formula 8 The peak current value is larger than the IOUT value. In case of this, selecting the condition of the input and the output and the external components by considering of ILMAX value. The explanation above is based on the ideal calculation, and the loss caused by LX switch and the external components are not included. The actual maximum output current will be between 50% and 80% by the above calculations. Especially, when the IL is large or VIN is low, the loss of VIN is generated with on resistance of the switch. Moreover, it is necessary to consider Vf of the diode (approximately 0.8 V) about VOUT. 9 R1204x No. EA-284-180511 PWM/VFM Auto-Switching Control (R1204xxxxC/F) In low output current, the IC automatically switches to high-efficiency VFM mode. The minimum Onduty (DON_MIN) of VFM mode is set to approximately 30% and is fixed inside the IC. If the difference between the voltages of the input and the output is small, or the Onduty in continuous mode (DON_CON) becomes lower than DON_MIN, the IC will not shift to PWM mode but will stay with VFM mode instead even in high output current, as a result, the ripple current will be increased. DON_MIN should be 70% or more (VSET > VIN x 3.33). Soft-Start Function (R1204xxxxA/D/G/H) Unless otherwise VOUT is beyond the threshold (Vf x number of LED lights), current will not flow through LEDs, as a result, VFB voltage will not increase. The IC increases VOUT by controlling the output of error amplifier to “H” and turning the LX switch on and off for a certain period of time (until the current flow). At the mean time, the inrush current is controlled by gradually increasing the current limit. If VOUT is over the threshold (the current flows), the IC controls the soft-start function by gradually increasing the reference voltage of error amplifier. (R1204xxxxB/C/E/F) The IC controls the soft-start function by gradually increasing the reference voltage of error amplifier. Soft-start begins when the output voltage of error amplifier is 0V and ends when it reaches the constant voltage. Current Limit Function If the peak current of inductor (ILMAX) exceeds the current limit, current limit function turns the driver off and turns it on in every switching cycle to continually monitor the driver current. Under Voltage Lock Out Function (UVLO) UVLO function stops DC/DC operation and prevents malfunction when the supply voltage falls below the UVLO detector threshold. Over Voltage Protection Circuit (OVP) OVP circuit monitors the VOUT pin voltage and if it reaches the OVP voltage it will stop oscillation. When the VOUT pin voltage decreases it will restart oscillation, but if the cause of the excess VOUT pin voltage is not removed the OVP circuit will operate repeatedly so as to restrict the VOUT pin voltage. Thermal Shutdown Function If the junction temperature exceeds the thermal shutdown temperature, thermal shutdown function turns the driver off. If the junction temperature becomes lower than the thermal shutdown released temperature, the thermal shutdown function resets the IC to restart the operation. 10 R1204x No. EA-284-180511 APPLICATION INFORMATION R1204xxxxA/D/G/H Typical Applications VIN = 2.3V to 5.5V L1 C1 C2 VIN C2 VIN VLED = VIN -VFB to VOUT LX VLED = VIN -VFB to VOVP1MIN-3V VOUT CE VFB GND D1 C1 LX CE LEDs in Parallel (LED Arrays) VIN = 2.3V to 5.5V L1 D1 VOVP1MIN-3V VFB GND R1 R1 Figure 1. Figure 2. VInductor = VIN to VOVP1MIN-3V VInductor = VIN to VOVP1MIN-3V VIN = 2.3V to 5.5V LEDs in Parallel (LED Arrays) L1 L1 C3 VIN = 2.3V to 5.5V C2 VIN LX CE VOUT GND VFB VLED = VIN -VFB to C1 C3 C2 VIN LX CE VOUT GND VFB VLED = VIN -VFB to C1 VOVP1MIN-3V VOVP1MIN-3V R1 R1 Figure 3. Figure 4. R1204xxxxB/C/E/F Typical Applications VIN = 2.3V to 5.5V L1 VInductor = VIN to VOVP1MIN-3V D1 L1 C1 VIN = 2.3V to 5.5V VIN LX C1 CE VIN LX CE VOUT VOUT C3 R2 GND C4 VFB R1 Figure 5. C2 R2 R3 GND C3 C2 R3 VFB R1 Figure 6. 11 R1204x No. EA-284-180511 Selection of Inductor Peak current of inductor (ILMAX) in normal mode when the efficiency is 80% can be calculated by the following formula. ILMAX = 1.25 x IOUT x VOUT / VIN + 0.5 x VIN x (VOUT - VIN) / (L1 x VOUT x fosc) ⋅ ⋅ ⋅ ⋅ When starting up the IC or when adjusting the brightness of LEDs, a large transient current may flow into an inductor (L1). ILMAX should be equal or smaller than the current limit of the IC. When deciding the rated current of inductor, ILMAX should be considered. It is recommended that L1 with 10 µH to 22 µH be used. Table 1. Peak Current Values for VIN, VOUT, IOUT, and L1 VIN (V) VOUT (V) IOUT (mA) 3 21 20 3 21 20 3 30 20 3 30 20 Table 2. Recommended Inductors L1 (μH) Parts No. 10 VLS252010ET-100M 10 VLF302512MT-100M 10 VLF403212MT-100M 22 VLF302512MT-220M 22 VLF403212MT-220M 22 VLF504012MT-220M Rated Current (mA) 550 620 900 430 540 800 ILMAX (mA) 280 225 365 305 L1 (µH) 10 22 10 22 Size (mm) 2.5 × 2.0 × 1.0 3.0 × 2.5 × 1.2 4.0 × 3.2 × 1.2 3.0 × 2.5 × 1.2 4.0 × 3.2 × 1.2 5.0 × 4.0 × 1.2 Versions R1204xxxxA/B/C/G R1204xxxxD/E/F/H Selection of Capacitor ⋅ Place a 1 µF or more bypass capacitor (C1) as close as possible to the VIN and GND pins [R1204xxxxA/D/G/H] ⋅ ⋅ ⋅ Place a 1 µF or more output capacitor (C2) as close as possible to the VOUT and GND pins. In the case of operating the inductor using a separated power supply from the IC, place a 1 µF or more bypass capacitor (C3) as close as possible to Vinductor and the GND pin. Note the VOUT that depends on LED used, and select the rating of VOUT or more. [R1204xxxxB/C/E/F] ⋅ ⋅ Place 1 µF to 10 µF C2 as close as possible to the VOUT and GND pins. In the case of operating the inductor using a separated power supply from the IC, place a 1 µF or more bypass capacitor (C4) as close as possible to Vinductor and the GND pin. 12 R1204x No. EA-284-180511 SBD (Schottky Barrier Diode) Selection ⋅ ⋅ Choose a diode that has low VF, low reverse current IR, and low capacitance. SBD is an ideal type of diode for R1204x since it has low VF, low reverse current IR, and low capacitance. Table 3. Recommended Components for R1204xxxxA/D/G/H Symbol Rated Voltage (V) Parts No. D1 60 CRS12 C1 6.3 CM105B105K06 C2012X5R1H105K C2 50 C3 (Option: Figure 4) Select by the input voltage C2012X5R1H225K (R1204xxxxG/H: ILED > 22 mA) 1 µF or more Table 4. Recommended Components for R1204xxxxB/C/E/F Symbol Rated Voltage (V) Parts No. D1 60 CRS12 C1 6.3 CM105B105K06 16 C2012X5R1C475K 25 C2012X5R1E105K 50 C2012X5R1H105K Select by the input voltage 1 µF or more C2 C4 (Option: Figure 6) Table 5. Recommended Component Values for R1204xxxxB/C/E/F VSET (V) 7 < VSET ≤ 10 10 < VSET ≤ 25 25 < VSET R1 (kΩ) 10 10 10 R2 (kΩ) (VSET -1) x R1 (VSET -1) x R1 (VSET -1) x R1 R3 (Ω) 0 0 0 C1 (µF) 1.0 1.0 1.0 C2 (µF) 4.7 1.0 × 2 1.0 C3 (pF) 10 10 10 C4 (µF) 1.0 1.0 1.0 13 R1204x No. EA-284-180511 Other External Components Settings Set a capacitor (C3) between the VOUT and VFB pins to improve the response of DC/DC converter by giving high-frequency voltage feedback. Please note that C3 operation could be different from the theory of operation depending on component layouts and parasitic capacitances. Output Voltage Setting (R1204xxxxB/C/E/F) The relation between the output voltage (VSET) and the resistors (R1, R2) is calculable by the following formula. VSET = VFB × (R1 + R2) / R1 The sum of R1 and R2 should be 300 kΩ or less. Ensure the VIN and GND lines are sufficiently robust. If their impedances are too high, noise pickup or unstable operation may result. Set a capacitor (C2) with a suitable voltage resistance (more than 1.5 times of VSET) between the VIN and GND pins, and as close as possible to the pins. LED Current Setting (R1204xxxxA/D/G/H) The LED current (ILED) when a ”H” signal is applied to the CE pin (Duty = 100%) can be determined by the value of feedback resistor (R1). ILED = 0.2 / R1 (R1204xxxxA/D) ILED = 0.4 / R1 (R1204xxxxG/H) LED Dimming Control (R1204xxxxA/D/G/H) The brightness of the LEDs can be adjusted by applying a PWM signal to the CE pin. By inputting “L” voltage for a certain period of time (Typ. 9 ms (R1204xxxxA/G) / 12 ms (R1204xxxxD/H) or more), the IC goes into standby mode and turns off LEDs. ILED can be controlled by the duty of a PWM signal for the CE pin. The relation between the high-duty of the CE pin (Hduty) and ILED is calculatable by the following formula. ILED = Hduty × VFB / R1 The frequency range of a PWM signal should be set within the range of 200 Hz to 300 kHz. In the case of using a 20 kHz or less PWM signal for dimming the LEDs, the increasing or decreasing of the inductor current (IL) may make noise in the audible band. In this case, a high frequency PWM signal should be used. CE Hduty VFB R1 Figure 7. Dimming Control by CE Pin 14 R1204x No. EA-284-180511 Low luminance Dimming Accuracy (R1204xxxxG/H) Low luminance Dimming filtered VFB voltage tolerance depends on the offset voltage of the internal DC/DC converter. By this offset voltage, some voltage difference may be generated between VREF voltage and VFB voltage. Low luminance Dimming Accuracy is shown in Table 5. Table 6. Low luminance Dimming Accuracy for R1204xxxxG/H (R1 = 20 Ω) The duty of a PWM signal for the CE pin 3.5% (Frequency = 20 kHz to 300 kHz) (2) ILED Min. (2) 0.01 mA ILED Max. 2.1 mA(2) Guaranteed by design engineering (Ta = 25ºC). 15 R1204x No. EA-284-180511 TECHNICAL NOTES Current Path on PCB Figure 8 and Figure 9 show flows of current paths of the application circuits when MOSFET is ON and when MOSFET is OFF, respectively. ⋅ Parasitic elements (impedance, inductance or capacitance) in the paths pointed with red arrows in Figure 8 and Figure 9 influence stability of the system and cause noise outbreak. It is recommended that these ⋅ parasitic elements be minimized. In addition, except for the paths of LED load, it is recommended that the all wirings of the current paths be made as short and wide as possible. Load Load Figure 8. MOSFET-ON Figure 9. MOSFET-OFF Layout Guide for PCB ⋅ ⋅ ⋅ ⋅ Place C1 as close as possible to the VIN and GND pins. Also, connect the GND pin to the wider GND plane. Make the LX land pattern as small as possible. Make the wirings between the LX pin, the inductor and the diode as short as possible. Also, connect C2 as close as possible to the cathode of the diode. Place C2 as close as possible to the GND pin. 16 R1204x No. EA-284-180511 PCB Layout PKG: DFN(PLP)1820-6 pin R1204Kxx2A/D/G/H Topside Backside Topside Backside R1204Kxx2B/C/E/F 17 R1204x No. EA-284-180511 PKG: TSOT-23-6 pin R1204Nxx3A/D/G/H Topside Backside Topside Backside R1204Nxx3B/C/E/F 18 R1204x No. EA-284-180511 TYPICAL CHARACTERISTICS 1) Efficiency vs. Output Current of R1204xxxxA/D/G/H Used LED: NICHIA, NSSW208A (Vf = 3.0 V (ILED = 20 mA)) 1-1) Efficiency vs. Output Current with Different Output Voltages, 10 LEDs in Series (VOUT = 30 V (IOUT = 20 mA)) R1204xxxxA/G, L = 10 µH (VLF302512MT-100M) R1204xxxxD/H, L = 22 µH (VLF302512MT-220M) 100 100 Vin= 3.2 V 90 Vin= 4.2 V Vin= 3.6 V 95 Vin= 3.2 V Vin= 3.6 V Vin= 5 V 90 Vin= 4.2 V Vin= 5 V Efficiency [%] Efficiency [%] 95 85 80 75 70 85 80 75 70 65 65 60 60 0 5 10 15 20 25 Output Current [mA] 30 0 35 5 10 15 20 25 Output Current [mA] 30 35 8 LEDs in Series (VOUT = 24 V (IOUT = 20 mA)) R1204xxxxA/G, L = 10 µH (VLF302512MT-100M) R1204xxxxD/H, L = 22 µH (VLF302512MT-220M) 100 95 Vin= 3.2 V Vin= 3.6 V 95 90 Vin= 4.2 V Vin= 5 V 90 Efficiency [%] Efficiency [%] 100 85 80 75 85 80 75 70 Vin= 3.2 V Vin= 3.6 V 65 65 Vin= 4.2 V Vin= 5 V 60 60 70 0 5 10 15 20 25 30 0 35 5 10 15 20 25 30 35 Output Current [mA] Output Current [mA] 6 LEDs in Series (VOUT = 18 V (IOUT = 20 mA)) R1204xxxxD/H, L = 22 µH (VLF302512MT-220M) 100 100 95 95 90 90 Efficiency [%] Efficiency [%] R1204xxxxA/G, L = 10 µH (VLF302512MT-100M) 85 80 75 70 Vin= 3.2 V Vin= 3.6 V 65 Vin= 4.2 V Vin= 5 V 85 80 75 70 Vin= 3.2 V Vin= 3.6 V 65 Vin= 4.2 V Vin= 5 V 60 60 0 5 10 15 20 25 Output Current [mA] 30 35 0 5 10 15 20 25 30 35 Output Current [mA] 19 R1204x No. EA-284-180511 1-2) Efficiency vs. Output Current with Different Inductors (VIN = 3.6 V) 10 LEDs in Series (VOUT = 30 V (IOUT = 20 mA)) R1204xxxxA/G R1204xxxxD/H 100 100 VLS252010ET-100M VLF302512MT-100M VLF403212MT-100M VLF302512MT-220M Efficiency [%] 90 85 VLS252010ET-100M VLF302512MT-100M VLF302512MT-220M VLF504012MT-220M 95 Efficiency [%] 95 80 75 70 90 85 80 75 70 65 65 60 60 0 5 10 15 20 25 30 0 35 5 10 15 20 30 35 30 35 25 Output Current [mA] Output Current [mA] 8 LEDs in Series (VOUT = 24 V (IOUT = 20 mA)) R1204xxxxA/G R1204xxxxD/H 100 100 VLS252010ET-100M VLF302512MT-100M VLF403212MT-100M VLF302512MT-220M 90 85 95 Efficiency [%] Efficiency [%] 95 80 75 70 90 85 80 75 VLS252010ET-100M VLF302512MT-100M VLF302512MT-220M VLF504012MT-220M 70 65 65 60 60 0 5 10 15 20 25 30 35 0 5 10 Output Current [mA] 15 20 25 Output Current [mA] 1-3) Efficiency vs. Output Current with Different Numbers of LEDs R1204xxxxA/G, L=10µH (VLF302512MT-100M) R1204xxxxD/H, L=22µH (VLF302512MT-220M) 100 100 95 95 90 90 Efficiency [%] Efficiency [%] LEDs in 3 Parallels (VIN = 3.6 V) 85 80 75 3LEDs in Series 6LEDs in Series 7LEDs in Series 70 65 60 80 75 70 3LEDs in Series 6LEDs in Series 65 7LEDs in Series 60 0 20 85 5 10 15 20 25 30 Output Current (/1Series)[mA] 35 0 5 10 15 20 25 Output Current (/1Series)[mA] 30 35 R1204x No. EA-284-180511 LEDs in 3 Parallels (VIN = 5.0 V) R1204xxxxD/H, L = 22 µH (VLF302512MT-220M) 100 100 95 95 90 90 Efficiency [%] Efficiency [%] R1204xxxxA/G, L = 10 µH (VLF302512MT-100M) 85 80 75 3LEDs in Series 70 6LEDs in Series 65 7LEDs in Series 85 80 75 60 70 3LEDs in Series 6LEDs in Series 65 7LEDs in Series 60 0 5 10 15 20 25 30 35 0 5 Output Current (/1Series)[mA] 10 15 20 25 30 35 Output Current (/1Series)[mA] 1-4) Efficiency vs. Output Current with Different Numbers of LEDs LEDs in 3 Parallels (VIN = 3.6 V, Inductor Voltage = 12.0 V) R1204xxxxD/H, L = 22 µH (VLF302512MT-220M) 100 100 95 95 90 90 Efficiency [%] Efficiency [%] R1204xxxxA/G, L = 10 µH (VLF302512MT-100M) 85 80 7LEDs in Series 8LEDs in Series 9LEDs in Series 10LEDs in Series 75 70 65 85 80 7LEDs in Series 8LEDs in Series 9LEDs in Series 10LEDs in Series 75 70 65 60 60 0 5 10 15 20 25 30 35 0 5 Output Current (/1Series) [mA] 10 15 20 25 30 Output Current (/1Series) [mA] 35 LEDs in 6 Parallels (VIN = 3.6 V, Inductor Voltage = 12.0 V) R1204xxxxD/H, L = 22 µH (VLF302512MT-220M) 100 100 95 95 90 90 Efficiency [%] Efficiency [%] R1204xxxxA/G, L = 10 µH (VLF302512MT-100M) 85 80 75 70 7LEDs in Series 65 9LEDs in Series 85 80 75 70 7LEDs in Series 9LEDs in Series 65 60 60 0 5 10 15 20 25 30 Output Current (/1Series) [mA] 35 0 5 10 15 20 25 30 35 Output Current (/1Series) [mA] 21 R1204x No. EA-284-180511 2) Efficiency vs. Output Current of R1204xxxxB/C/E/F 2-1) Efficiency vs. Output Current with Different Output Voltages VSET = 31 V VIN = Inductor Voltages R1204xxxxC, L = 10 µH (VLF302512MT-100M) R1204xxxxF, L = 22 µH (VLF302512MT-220M) 100 95 Vin= 3.2 V 90 Vin= 3.6 V 85 Vin= 5 V 90 Vin= 3.2 V Vin= 3.6 V 85 Vin= 5 V 95 Efficiency [%] Efficiency [%] 100 80 75 70 80 75 70 65 65 60 60 0 10 20 30 40 50 60 70 80 0 90 10 20 Output Current [mA] 30 40 50 60 Output Current [mA] 70 80 90 Different VIN / Inductor Voltages (VIN = 3.6 V) R1204xxxxF, L = 22 µH (VLF302512MT-220M) 100 100 95 95 90 90 Efficiency [%] Efficiency [%] R1204xxxxC, L = 10 µH (VLF302512MT-100M) 85 80 75 V Inductor= 7.2 V 70 V Inductor= 9 V V Inductor= 12 V 65 85 80 75 V Inductor= 7.2 V 70 V Inductor= 9 V 65 V Inductor= 12 V 60 60 0 50 100 150 Output Current [mA] 0 200 50 100 150 Output Current [mA] 200 VSET = 25 V VIN = Inductor Voltages R1204xxxxC, L = 10 µH (VLF302512MT-100M) R1204xxxxF, L = 22 µH (VLF302512MT-220M) 100 100 Efficiency [%] 90 85 80 75 70 90 85 80 75 70 65 65 60 60 0 10 20 30 40 50 60 70 80 90 100 110 Output Current [mA] 22 Vin= 3.2 V Vin= 3.6 V Vin= 5 V 95 Efficiency [%] Vin= 3.2 V Vin= 3.6 V Vin= 5 V 95 0 10 20 30 40 50 60 70 80 90 100 110 Output Current [mA] R1204x No. EA-284-180511 Different VIN / Inductor Voltages (VIN = 3.6 V) R1204xxxxC, L = 10 µH (VLF302512MT-100M) R1204xxxxF, L = 22 µH (VLF302512MT-220M) 100 95 95 90 90 Efficiency [%] Efficiency [%] 100 85 80 75 V Inductor= 7.2 V 70 V Inductor= 9 V 65 V Inductor= 12 V 60 85 80 75 70 V Inductor= 7.2 V V Inductor= 9 V 65 V Inductor= 12 V 60 0 50 100 150 200 Output Current [mA] 250 0 50 100 150 200 Output Current [mA] 250 VSET = 21 V VIN = Inductor Voltage R1204xxxxC, L = 10 µH (VLF302512MT-100M) R1204xxxxF, L = 22 µH (VLF302512MT-220M) 100 95 95 90 90 85 80 75 Vin= 3.2 V Vin= 3.6 V Vin= 5 V 70 65 Efficiency [%] Efficiency [%] 100 85 80 75 Vin= 3.2 V Vin= 3.6 V Vin= 5 V 70 65 60 60 0 10 20 30 40 50 60 70 80 90 10 11 12 13 Output Current [mA] 0 0 0 0 0 10 20 30 40 50 60 70 80 90 10 11 12 13 Output Current [mA] 0 0 0 0 Different VIN / Inductor Voltages (VIN = 3.6 V) R1204xxxxF, L = 22 µH (VLF302512MT-220M) 100 100 95 95 90 90 Efficiency [%] Efficiency [%] R1204xxxxC, L = 10 µH (VLF302512MT-100M) 85 80 80 75 V Inductor= 7.2 V V Inductor= 9 V 70 V Inductor= 9 V V Inductor= 12 V 65 V Inductor= 12 V 75 V Inductor= 7.2 V 70 65 85 60 60 0 100 200 Output Current [mA] 300 0 100 200 Output Current [mA] 300 23 R1204x No. EA-284-180511 2-2) Efficiency vs. Output Current with PWM Control and PWM/VFM Auto-Switching Control (VIN = 3.6 V, VSET = 12 V) R1204xxxxE/F, L = 22 µH (VLF302512MT-220M) 90 90 80 80 70 70 Efficiency [%] Efficiency [%] R1204xxxxB/C, L = 10 µH (VLF302512MT-100M) 60 50 40 R1204xxxxC 30 R1204xxxxB 20 60 50 40 R1204xxxxF 30 R1204xxxxE 20 0.1 1 10 100 0.1 Output Current [mA] Inductor Voltage = 7.2 V, VSET = 25 V R1204xxxxB/C, L = 10 µH (VLF302512MT-100M) 90 Efficiency [%] 80 70 60 50 40 R1204xxxxC 30 R1204xxxxB 20 0.1 1 10 100 Output Current [mA] 3) Maxduty vs. ILED (R1204xxxxA/D/G/H, 10 LEDs in Series, VIN = 3.6 V) ILED-DUTY VIN=3.6V 25 ILED [mA] 20 15 10 Freq=200Hz 5 Freq=10kHz Freq=300kHz 0 0 24 20 60 40 Duty [%] 80 100 1 10 Output Current [mA] 100 R1204x No. EA-284-180511 4) VOUT / ILED Ripple of R1204xxxxA/D/G/H When Dimming (10 LEDs in Series, L = 10 µH (VLF302512MT-100M)) CE Freq = 200 Hz CE Freq = 10 kHz 10LED CE Freq=10KHz 10LED CE Freq=200Hz 16 55 Vou t 32 32 Vou t 40 26 10 14 ILED 14 8 -5 8 12 20 ILED (mA) 25 Output Voltage (V) CE Voltage (V) ILED 20 ILED (mA) Output Voltage (V) CE Voltage (V) 26 8 CE CE -20 2 -4 -10 -35 -5 0 Time (ms) 5 2 -4 -500 10 -250 0 250 4 500 Time (µs) CE Freq = 300 kHz 10LED CE Freq=300KHz 16 32 Vou t 12 20 ILED (mA) Output Voltage (V) CE Voltage (V) 26 ILED 14 8 CE 8 2 -4 4 -1 3 7 11 15 Time (µs) 5) VOUT Ripple (VIN = 3.6 V, VSET = 21 V, IOUT = 0 mA, L = 10 µH (VLF302512MT-100M)) PWM Control (R1204xxxxB) VFM Control (R1204xxxxC) Vout Vout VLx VLx 25 R1204x No. EA-284-180511 6) Load Transient Response (VIN = 3.6 V, VSET = 25 V, L = 10 µH (VLF302512MT-100M), IOUT = 10 mA ⇔ 30 mA, Tr = Tf = 0.5 µs) R1204xxxxC R1204xxxxF Output Voltage Output Voltage 1V /div 1V /div Load Current Load Current 20mA /div 20mA /div 7) Supply Current vs. Ambient Temperature 8) UVLO vs. Ambient Temprature 1200 2.2 1100 2.1 1000 2.1 UVLO Voltage [V] Supply Current [uA] Time Scale : 1ms /div R1204xxxxF Time Scale : 1ms /div R1204xxxxC 900 800 700 600 Released 2.0 Detected 2.0 1.9 1.9 500 400 1.8 -40 -15 10 35 60 85 -40 -15 10 Temprature Ta [°C] 35 60 85 Temperature Ta [°C] 9) VFB Voltage vs. Ambient Temperature R1204xxxxG/H 0.220 0.440 0.215 0.430 0.210 0.420 VFB Voltage[V] VFB Voltage[V] R1204xxxxA/D 0.205 0.200 0.195 0.400 0.390 0.190 0.380 0.185 0.370 0.360 0.180 -40 -15 10 35 Temperature Ta [°C] 26 0.410 60 85 -40 -15 10 35 Temperature Ta [°C] 60 85 R1204x No. EA-284-180511 R1204xxxxB/C/E/F 1.100 1.075 VFB Voltage[V] 1.050 1.025 1.000 0.975 0.950 0.925 0.900 -40 -15 10 35 60 85 Temperature Ta [°C] 10) Switch ON Resistance vs. Ambient Temperature 11) OVP Voltage vs. Ambient Temperature R1204x3xxx 43.0 42.0 1.0 41.0 OVP Voltage [V] Switch ON Resistanse [ohm] 1.2 0.8 0.6 0.4 Released 40.0 39.0 Detected 38.0 37.0 0.2 36.0 35.0 0 -40 -15 10 35 60 85 -40 -15 10 35 60 85 Temperature Ta [°C] Temperature Ta [°C] 12) LX Limit Current vs. Ambienet Temperature 1200 LX Current Limit [mA] 1100 1000 900 800 Vin=2.8V Vin=3.6V 700 Vin=5.5V 600 -40 -15 10 35 60 85 Temperature Ta [°C] 27 R1204x No. EA-284-180511 13) Oscillator Frequency vs. Ambiemnt Temperature R1204xxxxA/B/C/G R1204xxxxD/E/F/H 900 1200 Oscillator Frequency [kHz] Oscillator Frequency [kHz] 1150 1100 1050 1000 950 Vin=3.6V 900 Vin=5.5V 850 850 800 750 700 Vin=3.6V 650 Vin=5.5V 800 600 -40 -15 10 35 Temperature Ta [°C] 28 60 85 -40 -15 10 35 Temperature Ta [°C] 60 85 POWER DISSIPATION DFN(PLP)1820-6 Ver. B The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes  0.2 mm × 34 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 2200 mW Thermal Resistance (ja) ja = 45°C/W Thermal Characterization Parameter (ψjt) ψjt = 18°C/W ja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 2500 2200 Power Dissipation (mW) 2000 1500 1000 500 0 0 25 50 75 85 100 125 Ambient Temperature (°C) Power Dissipation vs. Ambient Temperature Measurement Board Pattern i PACKAGE DIMENSIONS DFN(PLP)1820-6 Ver. B DFN(PLP)1820-6 Package Dimensions * *∗ The tab on the bottom of the package is substrate level (GND). It is recommended that the tab be connected to the ground plane on the board, or otherwise be left floating. i POWER DISSIPATION TSOT-23-6 Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following conditions are used in this measurement. Measurement Conditions Item Standard Test Land Pattern Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Double-Sided Board) Board Dimensions 40 mm × 40 mm × 1.6 mm Top Side: Approx. 50% Copper Ratio Bottom Side: Approx. 50% φ 0.5 mm × 44 pcs Through-holes Measurement Result (Ta = 25°C, Tjmax = 125°C) Standard Test Land Pattern Item Power Dissipation 460 mW Thermal Resistance (θja) θja = 217°C/W Thermal Characterization Parameter (ψjt) ψjt = 40°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 600 Power Dissipation PD (mW) 500 460 400 300 200 100 0 0 25 50 75 85 100 125 Ambient Temperature (°C) Power Dissipation vs. Ambient Temperature Measurement Board Pattern i TSOT-23-6 PACKAGE DIMENSIONS +0.100 0.125-0.025 2.9±0.2 5 4 1 2 3 S 0.12 M 0∼15° 0 ∼ 0.1 +0.10 0.4-0.05 0.85±0.10 0.95 2.8±0.2 +0.2 1.6-0.1 6 0.4±0.2 Ver. A 0.10 S TSOT-23-6 Package Dimensions i 1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to Ricoh sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written consent of Ricoh. 3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise taking out of your country the products or the technical information described herein. 4. The technical information described in this document shows typical characteristics of and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under Ricoh's or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and transportation equipment, combustion equipment, safety devices, life support system etc.) should first contact us. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. Anti-radiation design is not implemented in the products described in this document. 8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 10. There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact Ricoh sales or our distributor before attempting to use AOI. 11. Please contact Ricoh sales representatives should you have any questions or comments concerning the products or the technical information. Halogen Free Ricoh is committed to reducing the environmental loading materials in electrical devices with a view to contributing to the protection of human health and the environment. Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since April 1, 2012. https://www.e-devices.ricoh.co.jp/en/ Sales & Support Offices Ricoh Electronic Devices Co., Ltd. Shin-Yokohama Office (International Sales) 2-3, Shin-Yokohama 3-chome, Kohoku-ku, Yokohama-shi, Kanagawa, 222-8530, Japan Phone: +81-50-3814-7687 Fax: +81-45-474-0074 Ricoh Americas Holdings, Inc. 675 Campbell Technology Parkway, Suite 200 Campbell, CA 95008, U.S.A. Phone: +1-408-610-3105 Ricoh Europe (Netherlands) B.V. Semiconductor Support Centre Prof. W.H. Keesomlaan 1, 1183 DJ Amstelveen, The Netherlands Phone: +31-20-5474-309 Ricoh International B.V. - German Branch Semiconductor Sales and Support Centre Oberrather Strasse 6, 40472 Düsseldorf, Germany Phone: +49-211-6546-0 Ricoh Electronic Devices Korea Co., Ltd. 3F, Haesung Bldg, 504, Teheran-ro, Gangnam-gu, Seoul, 135-725, Korea Phone: +82-2-2135-5700 Fax: +82-2-2051-5713 Ricoh Electronic Devices Shanghai Co., Ltd. Room 403, No.2 Building, No.690 Bibo Road, Pu Dong New District, Shanghai 201203, People's Republic of China Phone: +86-21-5027-3200 Fax: +86-21-5027-3299 Ricoh Electronic Devices Shanghai Co., Ltd. Shenzhen Branch 1205, Block D(Jinlong Building), Kingkey 100, Hongbao Road, Luohu District, Shenzhen, China Phone: +86-755-8348-7600 Ext 225 Ricoh Electronic Devices Co., Ltd. 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