R1207N Series
STEP-UP DC/DC CONVERTER
NO.EA-298-190808
OUTLINE
The R1207N Series are CMOS-based PWM control type step-up DC/DC converter ICs with low supply current.
Each of these ICs consists of an NMOS FET, a diode, an oscillator, a PWM comparator, a voltage reference unit,
an error amplifier, a current limit circuit, an under voltage lockout circuit (UVLO), an over-voltage protection circuit
(OVP), a soft-start circuit, a Maxduty limit circuit, and a thermal shutdown protection circuit. This step-up DC/DC
converter can be easily built with a few external components such as a coil, a resistor, and a capacitor. As the
protection functions, the R1207N Series have a Lx peak current limit function, an over voltage protection (OVP)
function, an under voltage lock out (UVLO) function and a thermal shutdown function.
The R1207N Series present the R1207N8xxA version that is optimized for the constant voltage power source,
and the R1207N8xxB/C version that is optimized for driving the white LED with the constant current. The
R1207N8xxB/C is an adjustable version that can change the LED brightness dynamically by using a 200Hz to
300kHz PWM signal toward the CE pin.
The R1207N Series are available in TSOT-23-6 package.
FEATURES
• Input Voltage Range .................................................. 2.3V to 5.5V (R1207N8xxA)
1.8V to 5.5V (R1207N8xxB/C)
• Supply Current ........................................................... Typ. 800µA
• Standby Current ......................................................... Max. 5µA
• Feedback Voltage ...................................................... 1.0V±1.5% (R1207N8xxA)
0.2V±10mV (R1207N8xxB)
0.4V±10mV (R1207N8xxC)
• Oscillator Frequency .................................................. Typ. 1.2MHz
• Maximum Duty Cycle ................................................. Typ. 91%
•
•
•
•
•
•
•
•
UVLO Function ·············································· Typ.2.0V (Hys.Typ.0.2V) (R1207N8xxA)
Typ.1.6V (Hys.Typ.0.1V) (R1207N8xxB/C)
Lx Current Limit Function ........................................... Select from 350mA, 700mA
Over Voltage Protection ............................................. Typ. 25V
LED dimming control (R1207N8xxB/C) ................... by external PWM signal (Frequency 200Hz to 300kHz)
Thermal Protection Function ...................................... Typ.150ºC(Hys.Typ.50ºC)
Switch ON Resistance ............................................... Typ. 1.35Ω
Package ..................................................................... TSOT-23-6
Ceramic capacitors are recommended
APPLICATION
• Constant Voltage Power Source for portable equipment
• OLED power supply for portable equipment
• White LED Backlight for portable equipment
1
R1207N
NO.EA-298-190808
SELECTION GUIDE
The OVP threshold voltage, current limit and VFB/Auto discharge are user-selectable options.
2
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
R1207N8x3∗-TR-FE
TSOT-23-6
3,000 pcs
Yes
Yes
x
: Designation of current limit.
(1) 350mA
(2) 700mA
∗
: Designation of VFB.
(A) 1.0V
(B) 0.2V
(C) 0.4V
R1207N
NO.EA-298-190808
BLOCK DIAGRAMS
R1207N8xxA
VIN
VFB
LX
VOUT
UVLO
Err. Amp.
PWM Comp.
+
–
+
–
R
Q
Driver
Control
S
vref
OVP
Oscillator
Soft-start
Slope Compensation
Current
Limit
Current
sense
Thermal
Shutdown
∑
CE
CE
GND
R1207N8xxB/C
VIN
VFB
LX
VOUT
UVLO
Err. Amp.
PWM Comp.
+
–
+
–
R
Q
S
vref
Driver
Control
OVP
Oscillator
PWM
Cntrl
EN
Slope Compensation
Shutdown
delay
∑
Current
Limit
Current
sense
Thermal
Shutdown
CE
CE
GND
3
R1207N
NO.EA-298-190808
PIN DESCRIPTIONS
TSOT-23-6
6
5
4
(mark side)
1
2
3
TSOT-23-6
4
Pin No
Symbol
Pin Description
1
LX
2
GND
3
VFB
Feedback Pin
4
CE
Chip Enable Pin ("H" Active)
5
VOUT
Output Pin
6
VIN
Switching Pin (Open Drain Output)
Ground Pin
Input Pin
R1207N
NO.EA-298-190808
ABSOLUTE MAXIMUM RATINGS
Symbol
GND=0V
Item
Rating
Unit
VIN
VIN Pin Voltage
−0.3 to 6.5
V
VCE
CE Pin Voltage
−0.3 to 6.5
V
VFB
VFB Pin Voltage
−0.3 to 6.5
V
VOUT
VOUT Pin Voltage
−0.3 to 28
V
VLX
LX Pin Voltage
−0.3 to 28
V
ILX
LX Pin Current
1000
mA
PD
Power Dissipation (TSOT-23-6)∗
460
mW
Tj
Junction Temperature Range
−40 to 125
°C
Tstg
Storage Temperature Range
−55 to 125
°C
∗) Refer to POWER DISSIPATION for detailed information.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and
may degrade the life time and safety for both device and system using the device in the field.
The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
Rating
VIN
Operating Input Voltage
Ta
Operating Temperature Range
Unit
R1207N8xxA
2.3 to 5.5
V
R1207N8xxB/C
1.8 to 5.5
V
−40 to 85
°C
RECOMMENDED OPERATING CONDITIONS
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the recommended
operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And the
semiconductor devices may receive serious damage when they continue to operate over the recommended operating
conditions.
5
R1207N
NO.EA-298-190808
ELECTRICAL CHARACTERISTICS
R1207N
Symbol
IDD
(Ta=25°C)
Item
Supply Current
Istandby Standby Current
Conditions
Typ.
Max.
Unit
VIN=5.5V, VFB=0V , LX at no load
0.8
1.2
mA
VIN=5.5V, VCE=0V
1.0
5.0
µA
2.0
1.6
VUVLO1
+0.2
VUVLO1
+0.1
2.1
1.7
V
VUVLO1
UVLO Detector Threshold VIN falling
VUVLO2
UVLO Released Voltage
R1207N8xxA
R1207N8xxB/C
Min.
1.9
1.5
R1207N8xxA
VIN rising
R1207N8xxB/C
VCEH
CE Input Voltage "H"
VCEL
CE Input Voltage "L"
RCE
CE Pull Down Resistance
VFB
∆VFB/
∆Ta
IFB
V
0.5
1200
R1207N8xxA
R1207N8xxB
R1207N8xxC
VIN=3.6V
VFB Voltage Temperature
Coefficient
VIN=3.6V, −40°C ≤ Ta ≤ 85°C
VFB Input Current
VIN=5.5V, VFB=0V or 5.5V
tstart
Soft-start Time
RON
FET ON Resistance
ILX=100mA
IOFF
FET Leakage Current
VLX=24V
ILIM
FET Current Limit
VF
Diode Forward Voltage
fosc
0.985
0.19
0.39
1.000
0.2
0.4
-0.1
R1207N8xxB/C
2.0
500
700
900
0.8
86
91
24.2
25
VIN=3.6V, VOUT falling
TTSR
Thermal Shutdown
Detect Temperature
Thermal Shutdown
Release Temperature
Ω
R1207N82xx
VIN=3.6V, VFB=0V
OVP Release Voltage
ms
450
Maxduty Maximum Duty Cycle
VOVP2
3.0
350
1200
VIN=3.6V, VOUT rising
µA
250
1000
OVP Detect Voltage
0.1
R1207N81xx
VIN=3.6V, VFB=0V
V
ppm
/°C
3.0
VOUT=24V, VLX=0V
VOVP1
1.015
0.21
0.41
1.35
ISW =100mA
V
kΩ
±150
Oscillator Frequency
TTSD
V
1.8
1.5
VFB Voltage Accuracy
IDIODEleak Diode Leakage Current
6
VIN=5.5V
2.3
µA
mA
V
10
µA
1400
kHz
%
25.8
V
VOVP1
-1.8
V
VIN=3.6V
150
°C
VIN=3.6V
100
°C
R1207N
NO.EA-298-190808
THEORY OF OPERATION
Operation of Step-Up DC/DC Converter and Output Current
i2
IOUT
Diode
L
VIN
VOUT
i1
Lx Tr
CL
GND
Discontinuous mode
Continuous mode
ILmax
IL
IL
ILmax
ILmin
ILmin
topen
t
toff
ton
T=1/fosc
t
ton
toff
T=1/fosc
There are two operation modes of the step-up PWM control-DC/DC converter. That is the continuous mode and
discontinuous mode by the continuousness inductor.
When the transistor turns ON, the voltage of inductor L becomes equal to VIN voltage. The increase value of
inductor current (i1) will be
∆i1 = VIN × ton / L ........................................................................................................... Formula 1
As the step-up circuit, during the OFF time (when the transistor turns OFF) the voltage is continually supply from
the power supply. The decrease value of inductor current (i2) will be
∆i2 = (VOUT − VIN) × topen / L .......................................................................................... Formula 2
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R1207N
NO.EA-298-190808
At the PWM control-method, the inductor current become continuously when topen=toff, the DC/DC converter
operate as the continuous mode.
In the continuous mode, the variation of current of i1 and i2 is same at regular condition.
VIN × ton / L = (VOUT - VIN) × toff / L................................................................................... Formula 3
The duty at continuous mode will be
duty (%)= ton / (ton + toff) = (VOUT - VIN) / VOUT ................................................................ Formula 4
The average of inductor current at tf = toff will be
IL(Ave.) = VIN × ton / (2 × L) ........................................................................................... Formula 5
If the input voltage = output voltage, the IOUT will be
IOUT = VIN2 × ton / (2 × L × VOUT) ...................................................................................... Formula 6
If the IOUT value is large than above the calculated value (Formula 6), it will become the continuous mode, at this
status, the peak current (ILmax) of inductor will be
ILmax = IOUT × VOUT / VIN + VIN × ton / (2 × L) ................................................................... Formula 7
ILmax = IOUT × VOUT / VIN + VIN × T × (VOUT - VIN) / (2 × L × VOUT) ..................................... Formula 8
The peak current value is larger than the IOUT value. In case of this, selecting the condition of the input and the
output and the external components by considering of ILmax value.
The explanation above is based on the ideal calculation, and the loss caused by LX switch and the external
components are not included.
The actual maximum output current will be between 50% and 80% by the above calculations. Especially, when
the IL is large or VIN is low, the loss of VIN is generated with on resistance of the switch. Moreover, it is necessary
to consider Vf of the diode (approximately 0.8V) about VOUT.
Soft-Start (R1207N8xxB/C)
The output and referrence of the error amplifier start from 0V and the referrence gradually rises up to 1.0V.
After the softstart time (TSS), output voltage rise up to the setting voltage.
The output of the error amplifier starts from 0V and the inrush current is suppressed when starting by the CE
pin "H" input. Moreover, the inrush current can be suppressed by gradually enlarging Duty of the PWM signal to
the CE pin.
Current Limit Function
Current limit function monitors the over current and if it reaches the peak current, it will turn off the driver. When
the over current decreases, it will restart oscillation and will restart the monitoring.
8
R1207N
NO.EA-298-190808
APPLICATION INFORMATION
Typical Applications
R1207N8xxA
R1207N8xxB/C
L1
10µH
L1
10µH
C1
1µF
C1
1µF
VIN
LX
CE
VOUT
C3
R2
GND
R3
C2
1µF
VIN
LX
CE
VOUT
C2
0.22µF
VFB
R1
GND
VFB
R1
Inductor Selection
The peak current of the inductor at normal mode can be estimated as the next formula when the efficiency is 80%.
ILmax=1.25 x IOUT x VOUT / VIN + 0.5 x VIN x (VOUT - VIN) / (L x VOUT x fosc)
In the case of start-up or dimming control by CE pin, inductor transient current flows, and the peak current of it
must be equal or less than the current limit of the IC. The peak current should not beyond the rated current of the
inductor. The recommended inductance value is 10µH - 22µH.
Table 1 Peak current value in each condition
VIN (V)
3
3
3
3
Condition
VOUT (V) IOUT (mA)
14
20
14
20
21
20
21
20
L (µH)
10
22
10
22
ILmax (mA)
215
160
280
225
Table 2 Recommended inductors
L
(µH)
10
10
10
10
22
22
22
Part No.
LQH32CN100K53
LQH2MC100K02
VLF3010A-100
VLS252010-100
LQH32CN220K53
LQH2MC220K02
VLF3010A-220
Rated
Current (mA)
450
225
490
520
250
185
330
Size
(mm)
3.2x2.5x1.55
2.0x1.6x0.9
2.8x2.6x0.9
2.5x2.0x1.0
3.2x2.5x1.55
2.0x1.6x0.9
2.8x2.6x0.9
9
R1207N
NO.EA-298-190808
Capacitor Selection
Set 1µF or more value bypass capacitor C1 between VIN pin and GND pin as close as possible.
R1207NxxxA
Set 1µF – 4.7µF or more capacitor C2 between VOUT and GND pin.
Table 3-A Recommended components for R1207NxxxA
C1
C2
C3
R1
R2
R3
Rated voltage(V)
Part No.
6.3
25
25
CM105B105K06
GRM21BR11E105K
22pF
For VOUT Setting
For VOUT Setting
2kΩ
If the transient drop of output voltage by the load fluctuation is large and exceeds the allowable range in above
setting, refer to Table 3-B to change the capacitors of C2 and C3 for the response improvement and the transient
voltage drop reduction.
Table 3-B Recommended components for R1207xxxxA
C1
C2
C3
R1
R2
R3
Rated voltage(V)
Part No.
6.3
50
25
CM105B105K06
GRM31CR71H475M
220pF
For VOUT Setting
For VOUT Setting
2kΩ
R1207NxxxB/C
Set 0.22µF or more capacitor C2 between VOUT and GND pin. (R1207N8xxB)
Set 0.47µF or more capacitor C2 between VOUT and GND pin. (R1207N8xxC)
Note the VOUT that depends on LED used, and select the rating of VOUT or more.
Table 4 Recommended components for R1207NxxxB/C
C1
C2
10
Rated voltage(V)
Part No.
6.3
25
25
50
CM105B105K06
GRM21BR11E224
C2012X7R1E474K
GRM21BR71H224
R1207N
NO.EA-298-190808
External Components Setting
If the VOUT spike noise is high, it may influence on the VFB pin to cause the operation of R1205x8xxA unstable.
To reduce the noise coming into VFB pin, please place a 1kΩ to 5kΩ resistor in R3 in Fig. 1.
Application of Using 5.5V or more Power Supply
Other than the IC power supply, if there is a power supply greater than 5.5V, the high power output can be
achieved by using the power supply as an inductor power supply. In this case, please place a capacitor between
an inductor power supply and GND (shown in Fig. 2) aside from a bypass capacitor between the VIN pin and GND
of the IC.
V2=12V
V2=12V
L1
L1
C4
V1=3.3V
C4
V1=3.3V
VIN
LX
CE
VOUT
C1
VIN
LX
CE
VOUT
C1
C3
R2
GND
R3
C2
C2
GND
VFB
VFB
R1
Fig. 1 R1207N8xxA
R1
Fig. 2 R1207N8xxB/C
The Method of Output Voltage Setting (R1207N8xxA)
The output voltage (VOUT) can be calculated with divider resistors (R1 and R2) values as the following formula:
Output Voltage (VOUT) = VFB × (R1 + R2) / R1
The total value of R1 and R2 should be equal or less than 300kΩ. Make the VIN and GND line sufficient. The
large current flows through the VIN and GND line due to the switching. If this impedance (VIN and GND line) is
high, the internal voltage of the IC may shift by the switching current, and the operating may become unstable.
Moreover, when the built-in LX switch is turn OFF, the spike noise caused by the inductor may be generated. As
a result of this, recommendation voltage rating of capacitor (C2) value is equal 1.5 times larger or more than the
setting output voltage.
LED Current setting (R1207N8xxB/C)
When CE pin input is "H" (Duty=100%), LED current can be set with feedback resistor (R1)
ILED = VFB / R1
11
R1207N
NO.EA-298-190808
LED Dimming Control (R1207N8xxB/C)
The LED brightness can be controlled by inputting the PWM signal to the CE pin. If the CE pin input is "L" in
the fixed time (Typ.0.5ms), the IC becomes the standby mode and turns OFF LEDs.
The current of LEDs can be controlled by Duty of the PWM signal of the input CE pin. The current of LEDs
when High-Duty of the CE input is ”Hduty” reaches the value as calculatable following formula.
ILED = Hduty × VFB / R1
The frequency of the PWM signal is using the range between 200Hz to 300kHz.
When controlling the LED brightness by the PWM signal of 5kHz or less, R1207N8xxB/C are recomended to
avoide discharge function during dimming control.
When controlling the LED brightness by the PWM signal of 20kHz or less, the increasing or decreasing of the
inductor current might be make a sounds in the hearable sound wave area. In that case, please use the PWM
signal in the high frequency area.
CE
Hduty
VFB
R1
Dimming Control by CE Pin Input
•
Low luminance Dimming Accuracy (R1207N8xxC)
Low luminance Dimming filtered VFB voltage tolerance depends on the offset voltage of the internal DC/DC
converter. By this offset voltage, some voltage difference may be generated between VREF voltage and VFB
voltage. Low luminance Dimming Accuracy is shown below.
Low luminance Dimming Accuracy for R1207N8xxC (R1=20ohm)
The duty of a PWM signal for the CE pin
ILED Min.
ILED Max.
3.5% (Frequency = 20kHz ~ 300kHz)
0.01mA*2
2.1mA*2
*2
12
guaranteed by design engineering (Ta=25 ºC)
R1207N
NO.EA-298-190808
TECHNICAL NOTES
Current Path on PCB
The current paths in an application circuit are shown in Fig. 3 and 4.
A current flows through the paths shown in Fig. 3 at the time of MOSFET-ON, and shown in Fig. 4 at the time
of MOSFET-OFF. In the paths pointed with red arrows in Fig. 4, current flows just in MOSFET-ON period or
just in MOSFET-OFF period. Parasitic impedance / inductance and the capacitance of these paths influence
stability of the system and cause noise outbreak. So please minimize this side effect. In addition, please shorten
the wiring of other current paths shown in Fig. 3 and 4 except for the paths of LED load.
Layout Guide for PCB
⋅
Please shorten the wiring of the input capacitor (C1) between VIN pin and GND pin of IC. The GND pin should
be connected to the strong GND plane.
⋅
The area of LX land pattern should be smaller.
⋅
Please put output capacitor (C2) close to the VOUT pin.
⋅
Please make the GND side of output capacitor (C2) close to the GND pin of IC.
MOSFET-ON
Load
Load
Fig. 3
Fig. 4
MOSFET-OFF
PCB Layout
R1207N (PKG: TSOP-23-6pin)
Top Layer
Back Layer
U1-■ indicates the position of No.1 pin.
13
R1207N
NO.EA-298-190808
TYPICAL CHARACTERISTICS
1）Efficiency vs. Output Current Characteristics (R1207N823A)
VOUT=10V, L=22µH (LQH32CN220K53)
90
90
85
85
80
80
Efficiency (%)
Efficiency (%)
VOUT=10V, L=10µH (LQH32CN100K53)
75
70
65
Vin=3V
60
Vin=4.2V
10
15
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
50
50
5
65
55
Vin=5V
0
70
60
Vin=3.6V
55
75
0
20
5
VOUT=15V, L=10µH (LQH32CN100K53)
85
80
80
Efficiency (%)
85
Efficiency (%)
90
75
70
Vin=3V
Vin=3.6V
75
70
65
Vin=3V
Vin=3.6V
60
Vin=4.2V
Vin=4.2V
55
55
Vin=5V
Vin=5V
50
50
0
5
10
15
0
20
5
VOUT=20V, L=10µH (LQH32CN100K53)
15
20
VOUT=20V, L=22µH (LQH32CN220K53)
90
90
85
85
80
80
Efficiency (%)
Efficiency (%)
10
Output Current (mA)
Output Current (mA)
75
70
65
Vin=3V
75
70
65
60
Vin=3.6V
60
55
Vin=4.2V
Vin=5V
55
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
50
50
0
5
10
Output Current (mA)
14
20
VOUT=15V, L=22µH (LQH32CN220K53)
90
60
15
Output Current (mA)
Output Current (mA)
65
10
15
20
0
5
10
Output Current (mA)
15
20
R1207N
NO.EA-298-190808
VOUT=20V, VIN=3.6V
85
80
Efficiency (%)
75
70
65
60
LQH32CN100k53L (3.2×2.5×1.55)
VLF3010AT-100MR33 (2.8×2.6×0.9)
55
LQH2MCN100K02 (2.0×1.6×0.9)
50
0
5
10
15
20
Output Current (mA)
Typical Applications with Using 5.5V or Greater
VOUT=20V, L=10µH (LQH32CN100K53)
95
95
90
90
85
85
80
80
Efficiency (%)
Efficiency (%)
VOUT=15V, L=10µH (LQH32CN100K53)
75
70
65
Vin(L)=7.2V
60
70
65
Vin(L)=7.2V
60
Vin(L)=9V
55
75
Vin(L)=9V
55
Vin(L)=12V
Vin(L)=12V
50
50
0
5
10
15
0
20
5
10
15
20
Output Current (mA)
Output Current (mA)
2）Efficiency vs. Output Current Characteristics (R1207N823B/C)
4LED, L=10µH (LQH32CN100K53)
4LED, L=22µH (LQH32CN220K53)
85
85
80
80
Efficiency (%)
90
Efficiency (%)
90
75
75
70
70
65
65
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
50
50
0
5
10
15
Output Current ILED (mA)
20
0
5
10
15
20
Output Current ILED (mA)
15
R1207N
NO.EA-298-190808
5LED, L=22µH (LQH32CN220K53)
90
90
85
85
80
80
Efficiency (%)
Efficiency (%)
5LED, L=10µH (LQH32CN100K53)
75
75
70
70
65
65
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
50
50
0
5
10
15
0
20
5
6LED, L=10µH (LQH32CN100K53)
20
6LED, L=22µH (LQH32CN220K53)
90
85
85
80
80
Efficiency (%)
Efficiency (%)
90
75
75
70
70
65
65
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
60
55
50
50
0
5
10
15
20
Output Current ILED (mA)
85
80
75
70
65
60
LQH32CN100k53L (3.2×2.5×1.55)
VLF3010AT-100MR33 (2.8×2.6×0.9)
LQH2MCN100K02 (2.0×1.6×0.9)
55
50
0
5
10
15
Output Current ILED (mA)
0
5
10
15
Output Current ILED (mA)
6LED, VIN=3.6V
Efficiency (%)
15
Output Current ILED (mA)
Output Current ILED (mA)
16
10
20
20
R1207N
NO.EA-298-190808
Typical Applications with Using 5.5V or Greater
6LED, VIN(IC)=3.6V
95
95
90
90
85
85
80
Efficiency (%)
Efficiency (%)
5LED, VIN(IC)=3.6V
75
70
65
Vin(L)=7.2V
Vin(L)=9V
60
55
80
75
70
65
Vin(L)=7.2V
Vin(L)=9V
60
55
Vin(L)=12V
50
Vin(L)=12V
50
0
5
10
15
20
0
5
Output Current ILED (mA)
10
15
20
Output Current ILED (mA)
3）Output Voltage vs. Output Current (R1207N823A)
VOUT=10V, L=10µH (LQH32CN100K53)
VOUT=10V, L=22µH (LQH32CN220K53)
10.4
10.4
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
10.3
Output Voltage (V)
Output Voltage (V)
10.3
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
10.2
10.1
10
10.2
10.1
10
9.9
9.9
9.8
9.8
0
50
100
150
0
200
50
VOUT=15V, L=10µH (LQH32CN100K53)
150
200
VOUT=15V, L=22µH (LQH32CN220K53)
16
16
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
15.4
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
15.7
Output Voltage (V)
15.7
Output Voltage (V)
100
Output Current (mA)
Output Current (mA)
15.1
14.8
14.5
15.4
15.1
14.8
14.5
14.2
14.2
0
35
70
Output Current (mA)
105
140
0
30
60
90
120
Output Current (mA)
17
R1207N
NO.EA-298-190808
VOUT=20V, L=10µH (LQH32CN100K53)
VOUT=20V, L=22µH (LQH32CN220K53)
21.4
21.4
Output Voltage (V)
21
20.6
20.2
19.8
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
21
Output Voltage (V)
Vin=3V
Vin=3.6V
Vin=4.2V
Vin=5V
19.4
20.6
20.2
19.8
19.4
19
19
0
20
40
60
80
0
100
20
40
Output Current (mA)
60
80
100
Output Current (mA)
VOUT=20V, VIN=3.6V
21
20.8
Output Voltage (V)
20.6
20.4
20.2
20
19.8
19.6
LQH32CN100k53L (3.2×2.5×1.55)
19.4
VLF3010AT-100MR33 (2.8×2.6×0.9)
19.2
LQH2MCN100K02 (2.0×1.6×0.9)
19
0
10
20
30
40
50
Output Current (mA)
Typical Applications with Using 5.5V or Greater
VOUT=20V, L=10µH (LQH32CN100K53)
16
21
15.8
20.8
15.6
20.6
15.4
15.2
15
14.8
Vin(L)=7.2V
14.6
20.4
20.2
20
19.8
Vin(L)=7.2V
19.6
Vin(L)=9V
19.4
Vin(L)=12V
Vin(L)=9V
14.4
Vin(L)=12V
19.2
14.2
0
50
100
150
200
Output Current (mA)
18
Output Voltage (V)
Output Voltage (V)
VOUT=15V, L=10µH (LQH32CN100K53)
250
300
0
50
100
Output Current (mA)
150
200
R1207N
NO.EA-298-190808
4）Maxduty vs. ILED
5）OVP Output Waveform
R1207N823B/C
25
27
20
26
Output Voltage (V)
ILED (mA)
R1207N823B/C
15
10
200Hz
10kHz
5
300kHz
25
24
23
22
0
0
20
40
60
80
100
21
-50
Duty (%)
-30
-10
10
Time (ms)
30
50
6）Waveform (6LED)
R1207N823B/C (CE Freq=200Hz)
R1207N823B/C (CE Freq=10KHz)
CE
25
40
20
25
10
10
5
-5
0
-20
-5
ILED (mA)
15
-35
-10
-5
0
Time (ms)
5
10
25
10
5
-5
0
-20
-5
-500
10
10
5
-5
0
-20
Diode Forward Voltage (V)
25
ILED (mA)
Output Voltage (V)
CE Voltage (V)
10
-250
0
Time (us)
-35
500
250
0.95
40
15
40
25
ILED
20
ILED
15
55
CE
CE
7）Diode Forward Voltage vs. Temperature
R1207N823B/C (CE Freq=300KHz)
VOUT
55
VOUT
20
Output Voltage (V)
CE Voltage (V)
55
ILED
Output Voltage (V)
CE Voltage (V)
VOUT
ILED (mA)
25
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
-5
-35
-1
-0.5
0
Time [us]
0.5
1
-40
-15
10
35
60
85
Temparature Ta (°C)
19
R1207N
NO.EA-298-190808
8）Standby Current vs. Temperature
9）Supply Current vs. Temperature
Supplay Current Iin[uA]
1000
Standby Current(uA)
1.0
0.8
0.6
0.4
0.2
900
800
700
600
500
400
300
200
100
0
0.0
-40
-15
10
35
60
Temperature Ta(°C)
-40
85
10
-15
35
60
85
Temparature Ta (°C)
10）UVLO Output Voltage vs. Temperature
R1207N8xxA
R1207N8xxB
1.75
2.25
1.70
2.15
UVLO Voltage(V)
UVLO Voltage (V)
2.20
2.10
2.05
2.00
1.95
1.65
1.60
1.55
1.50
1.90
1.85
1.45
-40
-15
10
35
60
85
-40
Temparature Ta (°C)
-15
10
35
60
85
Temparature Ta (°C)
11）VFB Voltage vs. Temperature
R1207N8xxA
R1207N8xxB
0.210
1.050
0.208
0.206
VFB Voltage (V)
VFB Voltage (V)
1.030
1.010
0.990
0.204
0.202
0.200
0.198
0.196
0.194
0.970
0.192
0.190
0.950
-40
20
-15
10
35
60
Temparature Ta (°C)
85
-40
-15
10
35
Temparature Ta (°C)
60
85
R1207N
NO.EA-298-190808
R1207N8xxC
0.410
0.408
VFB Voltage (V)
0.406
0.404
0.402
0.400
0.398
0.396
0.394
0.392
0.390
-40
-15
60
10
35
Temperature Ta (°C)
85
13）OVP Voltage vs. Temperature
1.9
28
1.7
27
OVP Voltage (V)
Switch ON Resistance RON (Ω)
12）Switch ON Resistance RON vs. Temperature
1.5
1.3
1.1
0.9
26
OVP Detect
25
24
OVP Release
23
0.7
0.5
22
-40
-15
10
35
60
85
-40
Temparature Ta (°C)
-15
10
35
60
85
Temparature Ta (°C)
14）LX Current Limit vs. Temperature
R1207N81xx
R1207N82xx
900
Vin=2.8V
450
Vin=5.5V
400
Vin=2.8V
850
Vin=3.6V
Lx Limit Current (mA)
Lx Limit Current (mA)
500
350
300
250
Vin=3.6V
800
Vin=5.5V
750
700
650
600
550
200
500
-40
-15
10
35
Temparature Ta (°C)
60
85
-40
-15
10
35
60
85
Temparature Ta (°C)
21
R1207N
NO.EA-298-190808
15）Oscillator Frequency vs. Temperature
16）Maxduty vs. Temperature
100
1350
Vin=1.8V
98
1300
Vin=3.6V
96
Vin=5.5V
1250
1200
1150
MXDUTY (%)
Frequency fosc (kHz)
1400
Vin=1.8V
Vin=3.6V
Vin=5.5V
94
92
90
1100
88
1050
86
84
1000
-40
-15
10
35
60
85
Temparature Ta (°C)
-40
-15
10
Temparature Ta (°C)
17）Thermal Shutdown Detect / Release Temperature vs. Input Voltage
200
180
Temparature ( ℃)
160
Thermal Shutdown Detect
140
120
100
Thermal Shutdown Release
80
60
1.5
22
2
2.5
3
3.5
4
Vin (V)
4.5
35
5
5.5
6
60
85
R1207N
NO.EA-298-190808
18) Load Transient Response
VIN = 3.6 V, VOUT = 15 V
IOUT = 0 mA ⇔ 30 mA
L = 10 µH
Setting：Table 3-A
L = 22 µH
Setting：Table 3-A
L =10 µH
Setting：Table 3-B
23
R1207N
NO.EA-298-190808
L = 22 µH
24
Setting：Table 3-B
POWER DISSIPATION
TSOT-23-6
Ver. A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following conditions are used in this measurement.
Measurement Conditions
Standard Test Land Pattern
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Double-Sided Board)
Board Dimensions
40 mm × 40 mm × 1.6 mm
Top Side: Approx. 50%
Copper Ratio
Bottom Side: Approx. 50%
φ 0.5 mm × 44 pcs
Through-holes
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Standard Test Land Pattern
Power Dissipation
460 mW
θja = (125 − 25°C) / 0.46 W = 217°C/W
Thermal Resistance
θjc = 40°C/W
Power Dissipation PD (mW)
600
500
460
Standard Test Land Pattern
400
300
200
100
0
0
25
50
75 85 100
125
Ambient Temperature (°C)
Power Dissipation vs. Ambient Temperature
150
IC Mount Area (mm)
Measurement Board Pattern
i
PACKAGE DIMENSIONS
TSOT-23-6
+0.100
0.125-0.025
2.9±0.2
5
4
2
3
+0.10
0.4-0.05
0.85±0.10
0.95
S
0.12 M
0 ∼ 0.1
1
2.8±0.2
+0.2
1.6-0.1
6
0.4±0.2
Ver. A
0.10 S
TSOT-23-6 Package Dimensions (Unit: mm)
0∼15°
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