R3114x SERIES
0.8% LOW VOLTAGE DETECTOR
NO.EA-160-160226
OUTLINE
The R3114x series are CMOS-based voltage detector ICs with high detector threshold accuracy and ultra-low
supply current, which can be operated at an extremely low voltage and is used for system reset as an example.
Each of these ICs consists of a voltage reference unit, a comparator, resistors for detector threshold setting,
an output driver and a hysteresis circuit. The detector threshold is fixed with high accuracy internally and does
not require any adjustment.
Two output types, Nch open drain type and CMOS type are available.
The R3114x series are operable at a lower voltage than that of the R3111x series, and can be driven by a
single battery.
Three types of packages, SOT-23-5, SC-82AB, and DFN(PLP)1010-4 are available.
FEATURES
• Supply Current ................................................................... Typ. 0.35µA (-VDET=1.5V, VDD=-VDET+1V)
• Operating Voltage Range................................................... 0.5V to 6.0V (Topt=25°C)
• Detector Threshold Range ................................................. 0.7V to 5.0V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
• Detector Threshold Accuracy ............................................. ±0.8% (-VDET ≥ 1.5V)
• Temperature-Drift Coefficient of Detector Threshold ......... Typ. ±30ppm/°C
• Output Types ...................................................................... Nch Open Drain "L" and CMOS
• Packages ........................................................................... DFN(PLP)1010-4, SC-82AB, SOT-23-5
APPLICATIONS
•
•
•
•
•
•
CPU and Logic Circuit Reset
Battery Checker
Window Comparator
Wave Shaping Circuit
Battery Back-up Circuit
Power Failure Detector
1
R3114x
BLOCK DIAGRAMS
Nch Open Drain Output (R3114xxx1A)
VDD
CMOS Output (R3114xxx1C)
OUT
VDD
OUT
Vref
Vref
GND
GND
SELECTION GUIDE
The package type, the detector threshold, the output type and the taping type for the ICs can be selected at
the users’ request.
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
DFN(PLP)1010-4
10,000 pcs
Yes
Yes
R3114Qxx1∗-TR-FE
SC-82AB
3,000 pcs
Yes
Yes
R3114Nxx1∗-TR-FE
SOT-23-5
3,000 pcs
Yes
Yes
R3114Kxx1∗-TR
xx : The detector threshold can be designated in the range from 0.7V(07) to 5.0V(50) in 0.1V steps.
(For other voltages, please refer to MARK INFORMATIONS.)
∗ : Designation of Output Type
(A) Nch Open Drain
(C) CMOS
2
R3114x
PIN CONFIGURATIONS
• DFN(PLP)1010-4∗
Bottom View
Top View
4
3
3
4
1
2
2
1
• SOT-23-5
5
• SC-82AB
4
4
(mark side)
(mark side)
1
2
3
1
3
2
PIN DESCRIPTIONS
•
•
DFN(PLP)1010-4∗
Pin No. Symbol
1
OUT
2
NC
3
GND
4
VDD
Description
SOT-23-5
Pin No. Symbol
Output Pin
Description
Output Pin
1
OUT
No Connection
2
VDD
Ground Pin
3
GND
Input Pin
4
NC
No Connection
5
NC
No Connection
("L" at detection)
∗) Tab is GND level. (They are connected to the
reverse side of this IC.)
The tab is better to be connected to the GND,
but leaving it open is also acceptable.
•
("L" at detection)
Input Pin
Ground Pin
SC-82AB
Pin No. Symbol
Description
Output Pin
1
OUT
2
VDD
Input Pin
3
NC
No Connection
4
GND
("L" at detection)
Ground Pin
3
R3114x
ABSOLUTE MAXIMUM RATINGS
Symbol
VDD
Item
Supply Voltage
VOUT
IOUT
Output Voltage (Nch Open Drain Output)
Output Voltage (CMOS Output)
Unit
7.0
V
VSS−0.3 to 7.0
VSS−0.3 to VDD+0.3
Output Current
20
Power Dissipation (SOT-23-5)
∗
Power Dissipation (DFN(PLP)1010-4)
V
mA
420
Power Dissipation (SC-82AB)∗
PD
Rating
380
∗
mW
400
Topt
Operating Temperature Range
−40 to 85
°C
Tstg
Storage Temperature Range
−55 to 125
°C
∗) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
4
R3114x
ELECTRICAL CHARACTERISTICS
•
R3114xxx1A/C
Symbol
values indicate −40°C ≤ Topt ≤ 85°C, unless otherwise noted.
Item
Conditions
Topt=25°C
-VDET
Detector Threshold
−40°C ≤ Topt ≤
85°C
VHYS
1.5V < -VDET ≤ 5.0V
-VDET
× 0.992
0.7V ≤ -VDET ≤ 1.5V
-12
Supply Current
VDD=-VDET +1.0V
VDDH
Maximum Operating Voltage
VDDL
Minimum Operating
Voltage∗1
0.7V ≤ -VDET ≤ 1.5V
Detector Threshold
Temperature Coefficient
tPLH
Output Delay Time
V
+12
mV
-VDET
× 1.015
V
-22.5
+22.5
mV
-VDET
× 0.04
-VDET
× 0.07
V
1.40
1.6V ≤ -VDET < 3.1V
1.50
3.1V ≤ -VDET < 4.1V
1.60
4.1V ≤ -VDET ≤ 5.0V
1.70
0.7V ≤ -VDET < 1.6V
1.20
1.6V ≤ -VDET < 3.1V
1.20
3.1V ≤ -VDET < 4.1V
1.30
4.1V ≤ -VDET ≤ 5.0V
1.40
0.50
−40°C ≤ Topt ≤ 85°C
0.55
7
0.7V ≤ -VDET < 1.1V
VDD=0.6V
VDS=0.5V
0.02
1.1V ≤ -VDET < 1.6V
VDD=1.0V
VDS=0.5V
0.40
1.6V ≤ -VDET < 3.1V
VDD=1.5V
VDS=0.5V
1.00
3.1V ≤ -VDET ≤ 5.0V
VDD=3.0V
VDS=0.5V
2.40
0.7V ≤ -VDET < 4.0V
VDD=4.5V
VDS=−2.1V
0.65
4.0V ≤ -VDET ≤ 5.0V
VDD=6.0V
VDS=−2.1V
0.90
Pch∗2
∆-VDET/
∆Topt
-VDET
×1.008
Topt=25°C
Output Current
(Driver Output Pin)
Nch Driver Leakage Current∗3
Unit
6
Nch
ILEAK
Max.
0.7V ≤ -VDET < 1.6V
VDD=0.55V, VDS=0.05V
IOUT
Typ.
-VDET
1.5V < -VDET ≤ 5.0V
× 0.985
Detector Threshold
Hysteresis
VDD=-VDET −0.1V
ISS
Min.
Topt=25°C
V
V
µA
mA
mA
80
VDD=6.0V, VDS=7.0V
VDD=0.55V to -VDET+2.0V or 6.0V
µA
nA
±30
ppm
/°C
40
µs
All of unit are tested and specified under load conditions such that Topt=25°C except for Detector Threshold Temperature Coefficient.
∗1: Minimum operating voltage means the value of input voltage when output voltage maintains 0.1V or less.
(In case of Nch Open Drain Output type, the output pin is pulled up with a resistance of 470kΩ to 5.0V)
∗2: In case of CMOS type
∗3: In case of Nch Open Drain type
5
R3114x
TIMING CHART
Supply
Voltage Released Voltage +VDET
Detector Threshold -VDET
(VDD)
Detector Threshold
Hysteresis
Detector Threshold
Hysteresis
Minimum Operating Voltage VDDL
GND
Output
Voltage
(VOUT)
Pull-up Voltage
GND
tPHL
R3114xxx1A
tPLH
tPHL
R3114xxx1C
tPLH
DEFINITION OF OUTPUT DELAY TIME
Output Delay Time (tPLH) is defined as follows:
1. In the case of Nch Open Drain Output:
Under the condition of the output pin (OUT) is pulled up through a resistor of 470kΩ to 5V, the time interval
between the rising edge of VDD pulse from 0.55V to (-VDET)+2.0V or the time interval of 6.0V pulse voltage is
supplied, the becoming of the output voltage to 2.5V.
2. In the case of CMOS Output:
The time interval between the rising edge of VDD pulse from 0.55V to (-VDET)+2.0V or the time interval of 6.0V
pulse voltage is supplied, the becoming of the output voltage to ((-VDET)+2.0V)/2 or 3.0V.
-VDET+2.0V or 6.0V
Supply
Voltage
(VDD)
-VDET+2.0V or 6.0V
Supply
Voltage
(VDD)
0.55V
GND
0.55V
GND
-VDET+2.0V or 6.0V
5.0V
Output
Voltage
(VOUT)
2.5V
GND
tPHL
6
tPLH
((-VDET)+2.0V)/2 or 3.0V
Output
Voltage
GND
(VOUT)
tPHL
Nch Open Drain Output
CMOS Output
(R3114xxx1A)
(R3114xxx1C)
tPLH
R3114x
ELECTRICAL CHARACTERISTICS BY DETECTOR THRESHOLD
•
R3114x071A/C to R3114x501A/C
Bold values are checked and guaranteed by design engineering at −40°C ≤ Topt ≤ 85°C, unless otherwise noted.
Topt=25°C
Part
Number
R3114x071A/C
R3114x081A/C
R3114x091A/C
R3114x101A/C
R3114x111A/C
R3114x121A/C
R3114x131A/C
R3114x141A/C
R3114x151A/C
R3114x161A/C
R3114x171A/C
R3114x181A/C
R3114x191A/C
R3114x201A/C
R3114x211A/C
R3114x221A/C
R3114x231A/C
R3114x241A/C
R3114x251A/C
R3114x261A/C
R3114x271A/C
R3114x281A/C
R3114x291A/C
R3114x301A/C
R3114x311A/C
R3114x321A/C
R3114x331A/C
R3114x341A/C
R3114x351A/C
R3114x361A/C
R3114x371A/C
R3114x381A/C
R3114x391A/C
R3114x401A/C
R3114x411A/C
R3114x421A/C
R3114x431A/C
R3114x441A/C
R3114x451A/C
R3114x461A/C
R3114x471A/C
R3114x481A/C
R3114x491A/C
R3114x501A/C
Detector
Threshold1
-VDET1 [V]
Min.
0.6880
0.7880
0.8880
0.9880
1.0880
1.1880
1.2880
1.3880
1.4880
1.5872
1.6864
1.7856
1.8848
1.9840
2.0832
2.1824
2.2816
2.3808
2.4800
2.5792
2.6784
2.7776
2.8768
2.9760
3.0752
3.1744
3.2736
3.3728
3.4720
3.5712
3.6704
3.7696
3.8688
3.9680
4.0672
4.1664
4.2656
4.3648
4.4640
4.5632
4.6624
4.7616
4.8608
4.9600
Max.
0.7120
0.8120
0.9120
1.0120
1.1120
1.2120
1.3120
1.4120
1.5120
1.6128
1.7136
1.8144
1.9152
2.0160
2.1168
2.2176
2.3184
2.4192
2.5200
2.6208
2.7216
2.8224
2.9232
3.0240
3.1248
3.2256
3.3264
3.4272
3.5280
3.6288
3.7296
3.8304
3.9312
4.0320
4.1328
4.2336
4.3344
4.4352
4.5360
4.6368
4.7376
4.8384
4.9392
5.0400
Detector
Threshold2
-VDET2 [V]
Min.
0.6775
0.7775
0.8775
0.9775
1.0775
1.1775
1.2775
1.3775
1.4775
1.5760
1.6745
1.7730
1.8715
1.9700
2.0685
2.1670
2.2655
2.3640
2.4625
2.5610
2.6595
2.7580
2.8565
2.9550
3.0535
3.1520
3.2505
3.3490
3.4475
3.5460
3.6445
3.7430
3.8415
3.9400
4.0385
4.1370
4.2355
4.3340
4.4325
4.5310
4.6295
4.7280
4.8265
4.9250
Max.
0.7225
0.8225
0.9225
1.0225
1.1225
1.2225
1.3225
1.4225
1.5225
1.6240
1.7255
1.8270
1.9285
2.0300
2.1315
2.2330
2.3345
2.4360
2.5375
2.6390
2.7405
2.8420
2.9435
3.0450
3.1465
3.2480
3.3495
3.4510
3.5525
3.6540
3.7555
3.8570
3.9585
4.0600
4.1615
4.2630
4.3645
4.4660
4.5675
4.6690
4.7705
4.8720
4.9735
5.0750
Detector Threshold
Supply Current1
Hysteresis
VHYS [V]
Min.
0.028
0.032
0.036
0.040
0.044
0.048
0.052
0.056
0.060
0.064
0.068
0.072
0.076
0.080
0.084
0.088
0.092
0.096
0.100
0.104
0.108
0.112
0.116
0.120
0.124
0.128
0.132
0.136
0.140
0.144
0.148
0.152
0.156
0.160
0.164
0.168
0.172
0.176
0.180
0.184
0.188
0.192
0.196
0.200
Max.
0.049
0.056
0.063
0.070
0.077
0.084
0.091
0.098
0.105
0.112
0.119
0.126
0.133
0.140
0.147
0.154
0.161
0.168
0.175
0.182
0.189
0.196
0.203
0.210
0.217
0.224
0.231
0.238
0.245
0.252
0.259
0.266
0.273
0.280
0.287
0.294
0.301
0.308
0.315
0.322
0.329
0.336
0.343
0.350
ISS1 [µA]
Cond.
Max.
Supply Current2
Max. Op. Min. Op.
Voltage Voltage
ISS2 [µA]
VDDH [V] VDDL [V]
Cond.
Max.
Max.
Max.
1.400
1.200
1.500
0.50
VDD=
-VDET
-0.1V
VDD=
-VDET
+1.0V
6
0.55
∗Note1
1.600
1.300
1.700
1.400
∗Note1) VDD value when output voltage is equal or less than 0.1V. In the case of Nch Open Drain output type, the output pin
is pulled up to 5.0V through 470kΩ resistor.
7
R3114x
Nch Driver Output
Current1
IOUT1 [µA]
Cond.
Nch Driver Output
Current2
IOUT2 [mA]
Min.
Cond.
VDD=
0.6V
VDS=
0.5V
VDD=
1.0V
VDS=
0.5V
VDD=
1.5V
VDS=
0.5V
VDD=
0.55V
VDS=
0.05V
Min.
Pch Driver Output
Current
IOUT3 [mA]
Cond.
Min.
Nch Driver
Leakage Current
ILEAK [nA]
Cond.
tPLH [µs]
Cond.
Typ.
0.400
1.000
VDD=
4.5V
VDS=
-2.1V
VDD=
0.55V
↓
-VDET
+2.0V
0.650
7
VDS=
7.0V
VDS=
0.5V
Typ.
Output Delay
Time
0.020
VDD=
6.0V
VDD=
3.0V
Max.
Detector Threshold
Temperature
Coefficient
∆-VDET/∆Topt [ppm/°C]
∗Note2
80
40
±30
2.400
VDD=
6.0V
VDS=
-2.1V
0.900
VDD=
0.55V
↓
6.0V
∗Note2
∗Note2) 1. In the case of CMOS output type:
When the voltage is forced from 0.55V to (-VDET)+2.0V or a 6.0V pulse voltage is added to VDD, time interval
that the output voltage reaches ((-VDET)+2.0V)/2 or a 3.0V.
2. In the case of Nch Open Drain output type:
The output pin is pulled up to 5.0V through 470kΩ, and when the voltage is forced from 0.55V to (-VDET)+2.0V
or a 6.0V pulse voltage is added to VDD, time interval that the output voltage reaches 2.5V.
8
R3114x
OPERATION
•
Operation of R3114xxx1A
VDD
Ra
Comparator
OUT
OUT pin should be pulled-up to
VDD or an external voltage level.
Rb
Vref
Nch
Tr.1
Rc
GND
Block Diagram (R3114xxx1A)
1
3
4
5
Step
Released Voltage +VDET
Detector Threshold -VDET
2
A
Detector Threshold
Hysteresis
B
Supply Voltage
(VDD)
Minimum Operating Voltage VDDL
GND
1
2
3
4
5
Comparator (−)
Pin Input Voltage
I
II
II
II
I
Comparator Output
L
H
Indefinite
H
L
Tr.1
Output Tr.
I
Pull-up Voltage
Output Voltage
(VOUT)
Detect
Delay Time
tPHL
Output
Delay Time
tPLH
GND
II
OFF ON Indefinite ON OFF
Nch
OFF ON Indefinite ON OFF
Rb+Rc
×VDD
Ra+Rb+Rc
Rb
Ra+Rb
×VDD
Operation Diagram
•
Explanation of operation
Step 1. The output voltage is equal to the pull-up voltage.
Step 2. At Point "A", Vref >
= VDD×(Rb+Rc)/(Ra+Rb+Rc) is true, as a result, the output of comparator is reversed
from "L" to "H", therefore the output voltage becomes the GND level. The voltage level of Point A means
a detector threshold voltage (-VDET).
Step 3. When the supply voltage is lower than the minimum operating voltage, the operation of the output
transistor becomes indefinite. The output voltage is equal to the pull-up voltage.
Step 4. The output voltage is equal to the GND level.
Step 5. At Point "B", Vref <
= VDD×Rb/(Ra+Rb) is true, as a result, the output of comparator is reversed from "H" to
"L", then the output voltage is equal to the pull-up voltage. The voltage level of Point B means a released
voltage (+VDET).
∗) The difference between a released voltage and a detector threshold voltage is a detector threshold hysteresis.
9
R3114x
•
Operation of R3114xxx1C
VDD
Comparator
Ra
Pch
OUT
Rb
Vref
Nch
Tr.1
Rc
GND
Block Diagram (R3114xxx1C)
1
3
4
5
Step
Released Voltage +VDET
Detector Threshold -VDET
2
A
Detector Threshold
Hysteresis
B
Supply Voltage
(VDD)
1
2
3
4
5
Comparator (−)
Pin Input Voltage
I
II
II
II
I
Comparator Output
L
H
Indefinite
H
L
Minimum Operating Voltage VDDL
GND
Tr.1
Output Tr.
Output Voltage
(VOUT)
Detect
Delay Time
tPHL
Output
Delay Time
tPLH
GND
I
II
OFF ON Indefinite ON OFF
Pch
ON OFF Indefinite OFF ON
Nch
OFF ON Indefinite ON OFF
Rb+Rc
×VDD
Ra+Rb+Rc
Rb
Ra+Rb
×VDD
Operation Diagram
•
Explanation of operation
Step 1. The output voltage is equal to the supply voltage (VDD).
Step 2. At Point "A", Vref >
= VDD×(Rb+Rc)/(Ra+Rb+Rc) is true, as a result, the output of comparator is reversed
from "L" to "H", therefore the output voltage becomes the GND level. The voltage level of Point A means
a detector threshold voltage (-VDET).
Step 3. When the supply voltage is lower than the minimum operating voltage, the operation of the output
transistor becomes indefinite.
Step 4. The output voltage is equal to the GND level.
Step 5. At Point "B", Vref <
= VDD×Rb/(Ra+Rb) is true, as a result, the output of comparator is reversed from "H" to
"L", then the output voltage is equal to the supply voltage (VDD). The voltage level of Point B means a
released voltage (+VDET).
∗) The difference between a released voltage and a detector threshold voltage is a detector threshold hysteresis.
10
R3114x
Detector Operation vs. glitch input voltage to the VDD pin
When the R3114x is at released, if the pulse voltage which the detector threshold or lower voltage, the graph
below means that the relation between pulse width and the amplitude of the swing to keep the released state for
the R3114x.
VDD=-VDET+2V→ -VDET−VOD (R3114x071A/C)
VDD=-VDET+1V→ -VDET−VOD (R3114x501A/C)
VDD=-VDET×1.1→ -VDET−VOD
(R3114x071A/C, R3114x501A/C)
∗VOD: Over Drive Voltage
Pulse Width
Supply Voltage (VDD)
Detector Threshold (-VDET)
Over Drive
VDD Input Waveform
This graph shows the maximum pulse conditions to keep the released voltage. If the pulse with larger amplitude
or wider width than the graph above, is input to VDD pin, the reset signal may be output.
11
R3114x
TEST CIRCUITS
ISS
VIN
5V or VDD
VDD
VDD
R3114x
Series
470kΩ
R3114x
Series
VIN
VOUT
OUT
GND
GND
Supply Current Test Circuit
Detector Threshold Test Circuit
(Pull-up circuit is not necessary for
CMOS Output type.)
VDD
VDD
VIN
R3114x
Series
IOUT
R3114xxx1C
Series
VIN
OUT
VDS
GND
Nch Driver Output Current Test Circuit
VDS
IOUT
OUT
VDD−VDS
GND
Pch Driver Output Current Test Circuit
∗Apply to CMOS Output type only
-VDET+2.0V or 6.0V
VDD
6V
R3114xxx1A
Series
GND
0.55V
GND
ILEAK
OUT
7V
Nch Driver Leakage Current Test Circuit
∗Apply to Nch Driver Output type only
12
P.G.
5V
VDD
R3114x
Series
470kΩ
OUT
VOUT
GND
Output Delay Time Test Circuit
(Pull-up circuit is not necessary for
CMOS Output type.)
R3114x
TYPICAL CHARACTERISTICS
1) Supply Current vs. Input Voltage
R3114x071A/C
R3114x151A/C
R3114x271A/C
R3114x451A/C
2) Detector Threshold vs. Temperature
R3114x071A/C
R3114x151A/C
13
R3114x
R3114x271A/C
R3114x451A/C
3) Output Voltage vs. Input Voltage
14
R3114x071C
R3114x151C
R3114x271C
R3114x451C
R3114x
R3114x071A
R3114x151A
R3114x271A
R3114x451A
4) Nch Driver Output Current vs. Input Voltage
R3114x071A/C
(VDS=0.5V)
R3114x151A/C
15
R3114x
R3114x271A/C
R3114x451A/C
5) Nch Driver Output Current vs. VDS
16
R3114x071A/C
R3114x151A/C
R3114x271A/C
R3114x451A/C
R3114x
6) Pch Driver Output Current vs. Input Voltage
(VDS=−2.1V)
R3114x071C
R3114x151C
R3114x271C
R3114x451C
7) Pch Driver Output Current vs. VDS
R3114x071C
R3114x151C
17
R3114x
R3114x271C
R3114x451C
8) Output Delay Time vs. External Capacitance
18
R3114x071A
R3114x151A
R3114x271A
R3114x451A
R3114x
TYPICAL APPLICATION
•
R3114xxx1A CPU Reset Circuit 1 (Nch Open Drain Output)
Case1. Input Voltage to R3114xxx1A is equal to
Input Voltage to CPU
Case2. Input Voltage to R3114xxx1A is unequal to
Input Voltage to CPU
VDD
VDD
R
470kΩ
R3114xxx1A
Series
OUT
VDD
470kΩ
R
VDD
CPU
RESET
R3114xxx1A
Series
OUT
RESET
GND
GND
•
VDD2
VDD1
VDD
CPU
GND
GND
R3114xxx1C CPU Reset Circuit (CMOS Output)
VDD
VDD
VDD
CPU
R3114xxx1C
Series
OUT
RESET
GND
GND
•
R3114xxx1A Output Delay Time Circuit 1
(Nch Open Drain Output)
VDD1
•
R3114xxx1A Output Delay Time Circuit 2
(Nch Open Drain Output)
VDD
VDD2
VDD
470kΩ
R
R3114xxx1A
Series
OUT
VDD
CPU
R1
RESET
VDD
GND
OUT
RESET
GND
GND
GND
•
470kΩ
R3114xxx1A
Series
VDD
CPU
R2
Memory Back-up Circuit
VDD
D1
VDD
R3114xxx1C
Series
VCC
D2
A
B
C
GND
Y1
Y2
Y3
Y4
VCC
VCC
VCC
VCC
RAM1
RAM2
RAM3
RAM4
GND CS GND CS GND CS GND CS
OUT
GND
19
R3114x
•
Voltage level Indicator Circuit (lighted when the power runs out)
(Nch Open Drain Output)
VDD
VDD
R3114xxx1A
Series
OUT
GND
•
Detector Threshold Adjustable Circuit 1
(Nch Open Drain Output)
Vup
VDD
Ra
VDD
Rb
•
R3114xxx1A
Series
OUT
Rup
Adjustable Detector Threshold=(-VDET)×(Ra+Rb)/Rb
Hysteresis Voltage=(VHYS)×(Ra+Rb)/Rb
∗1) To prevent oscillation, set Ra ≤ 1kΩ, Rb ≤ 100Ω.
∗2) If the value of Ra is set excessively large, voltage drop
may occur caused by the supply current of IC itself,
and detector threshold and hysteresis voltage may
vary.
∗3) If Vup and VDD are connected, the voltage dropdown
caused by Rup, may cause difference in the hysteresis
voltage.
GND
Detector Threshold Adjustable Circuit 2
(Nch Open Drain Output)
Adjustable Detector Threshold=(-VDET)×(Ra+Rb)/Rb
VDD
20
Vup
Ra
VDD
Rb
C
R3114xxx1A
Series
GND
OUT
Rup
Hysteresis Voltage=(VHYS)×(Ra+Rb)/Rb
∗1) To prevent oscillation, set Ra ≤ 100kΩ, C ≥ ≤ 0.01µF.
∗2) If the value of Ra is set excessively large, voltage drop
may occur caused by the supply current of IC itself,
and detector threshold and hysteresis voltage may
vary.
∗3) If Vup and VDD are connected, the voltage dropdown
caused by Rup, may cause difference in the hysteresis
voltage.
∗4) If the value of Ra, Rb and C are set excessively large,
the delay of the start-up may become too long.
R3114x
•
Window Comparator Circuit
(Nch Open Drain Output)
VDD
Rup1
VDD
R3114xxx1A
Series
OUT
VDD
R3114xxx1A
Series
OUT
-VDET1
VDD
Rup2
-VDET2
WC_OU
-VDET2
GND
GND
-VDET1
WC_OUT
GND
GND
Over-charge Preventing Circuit
R1
R2
R3
D1
VDD
OUT
R3114xxx1C
Series
R4
Load
Light
Solar Battery
•
GND
21
R3114x
TECHNICAL NOTES
When connecting resistors to the device’s input pin
When connecting a resistor (R1) to an input of this device, the input voltage decreases by [Device’s
Consumption Current] x [Resistance Value] only. And, the cross conduction current*1, which occurs when
changing from the detecting state to the release state, is decreased the input voltage by [Cross Conduction
Current] x [Resistance Value] only. And then, this device will enter the re-detecting state if the input voltage
reduction is larger than the difference between the detector voltage and the released voltage.
When the input resistance value is large and the VDD is gone up at mildly in the vicinity of the released voltage,
repeating the above operation may result in the occurrence of output.
As shown in Figure A/B, set R1 to become 100 kΩ or less as a guide, and connect CIN of 0.1 μF and more to
between the input pin and GND. Besides, make evaluations including temperature properties under the actual
usage condition, with using the evaluation board like this way. As a result, make sure that the cross conduction
current has no problem.
R1
R1
VDD
CIN
*2
Voltage
Detector
VDD
OUT pin
R2
CIN
*2
GND
Figure A
*1 In the CMOS output type, a charging current for OUT pin is included.
*2 Note the bias dependence of capacitors.
22
Voltage
Detector
GND
Figure B
OUT pin
1. The products and the product specifications described in this document are subject to change or discontinuation of
production without notice for reasons such as improvement. Therefore, before deciding to use the products, please
refer to Ricoh sales representatives for the latest information thereon.
2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written
consent of Ricoh.
3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise
taking out of your country the products or the technical information described herein.
4. The technical information described in this document shows typical characteristics of and example application circuits
for the products. The release of such information is not to be construed as a warranty of or a grant of license under
Ricoh's or any third party's intellectual property rights or any other rights.
5. The products listed in this document are intended and designed for use as general electronic components in standard
applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products,
amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality
and reliability, for example, in a highly specific application where the failure or misoperation of the product could result
in human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and
transportation equipment, combustion equipment, safety devices, life support system etc.) should first contact us.
6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products
are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from
such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy
feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7. Anti-radiation design is not implemented in the products described in this document.
8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and
characteristics in the evaluation stage.
9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and
characteristics of the products under operation or storage.
10. There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the
case of recognizing the marking characteristic with AOI, please contact Ricoh sales or our distributor before attempting
to use AOI.
11. Please contact Ricoh sales representatives should you have any questions or comments concerning the products or
the technical information.
Halogen Free
Ricoh is committed to reducing the environmental loading materials in electrical devices
with a view to contributing to the protection of human health and the environment.
Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since
April 1, 2012.
https://www.e-devices.ricoh.co.jp/en/
Sales & Support Offices
Ricoh Electronic Devices Co., Ltd.
Shin-Yokohama Office (International Sales)
2-3, Shin-Yokohama 3-chome, Kohoku-ku, Yokohama-shi, Kanagawa, 222-8530, Japan
Phone: +81-50-3814-7687 Fax: +81-45-474-0074
Ricoh Americas Holdings, Inc.
675 Campbell Technology Parkway, Suite 200 Campbell, CA 95008, U.S.A.
Phone: +1-408-610-3105
Ricoh Europe (Netherlands) B.V.
Semiconductor Support Centre
Prof. W.H. Keesomlaan 1, 1183 DJ Amstelveen, The Netherlands
Phone: +31-20-5474-309
Ricoh International B.V. - German Branch
Semiconductor Sales and Support Centre
Oberrather Strasse 6, 40472 Düsseldorf, Germany
Phone: +49-211-6546-0
Ricoh Electronic Devices Korea Co., Ltd.
3F, Haesung Bldg, 504, Teheran-ro, Gangnam-gu, Seoul, 135-725, Korea
Phone: +82-2-2135-5700 Fax: +82-2-2051-5713
Ricoh Electronic Devices Shanghai Co., Ltd.
Room 403, No.2 Building, No.690 Bibo Road, Pu Dong New District, Shanghai 201203,
People's Republic of China
Phone: +86-21-5027-3200 Fax: +86-21-5027-3299
Ricoh Electronic Devices Shanghai Co., Ltd.
Shenzhen Branch
1205, Block D(Jinlong Building), Kingkey 100, Hongbao Road, Luohu District,
Shenzhen, China
Phone: +86-755-8348-7600 Ext 225
Ricoh Electronic Devices Co., Ltd.
Taipei office
Room 109, 10F-1, No.51, Hengyang Rd., Taipei City, Taiwan (R.O.C.)
Phone: +886-2-2313-1621/1622 Fax: +886-2-2313-1623