R3154N Series
AEC-Q100 Compliant
42 V Input Window Voltage Detector with Diagnostic Function
for Automotive Applications
No. EC-528-210917
OVERVIEW
The R3154N is a Window Voltage Detector suitable for functional safety requirement. This device monitors
over-and-under output voltages from the power supply IC for a microprocessor and a sensor, and detects
abnormal voltage of systems. Its undervoltage detection down to 0.55 V is suitable for low power devices.
Also, operation check of voltage detection is available with the TEST pin.
KEY BENEFITS
●
●
●
●
Power supply from battery enables the voltage detector to operate independently from the power source.
High-accuracy over-and-undervoltage detection from -1.25% to 0.75% and the hysteresis of Max. 0.75%.
Overvoltage detection: 0.75 V at minimum, Undervoltage detection: 0.55 V at minimum.
Compact package of SOT-23-6. Safe and secure adjacent pin configuration to prevent a short circuit.
KEY SPECIFICATIONS
● Operating Voltage Range (Max. Rating):
3.0 V to 42.0 V (50.0 V)
● Operating Temperature Range: −40 °C to 125 °C
● Supply Current: Typ. 2.0 µA
● Overvoltage Detection: 0.75 V to 3.70 V (in 0.01 V step)
Accuracy (VOVSET > 0.9 V): ±0.5 % (Ta = 25 °C)
−1.25 % to 0.75 % (−40 °C to 125 °C)
● Undervoltage Detection: 0.55 V to 3.30 V (in 0.01 V step)
Accuracy (VUVSET > 0.66 V): ±0.5 % (Ta = 25 °C)
−1.25 % to 0.75 % (−40 °C to 125 °C)
● Detection Release Hysteresis: Typ. 0.5 %
● Detection Release Time: Typ. 20 µs
● Release Delay Time: Typ. 4 ms (CD = 0.01 µF)
● Output Type: Nch. Open Drain
PACKAGE
SELECTION GUIDE
Product Name
Package
Quantity per
Reel
R3154NxxxA-TR-##
SOT-23-6
3,000 pcs
xxx: The combination of an overvoltage detection
setting voltage (VOVSET) and an undervoltage
detection setting voltage (VUVSET)
Refer to Product-specific Electrical Characteristics
for details.
#: Quality Class
Refer to SELECTION GUIDE for details.
TYPICAL APPLICATIONS
Battery
DCDC
VIN
MPU
RES_B
CD
SOT-23-6
2.9 x 2.8 x 1.1 (mm)
VDD
CD
SENSE
TEST
DOUT
VIN
R3154N
GPI
GPO0
Sub
MPU
GPO1
CD: a capacitor corresponding to the set release delay time
APPLICATIONS
● Power supply voltage monitoring for systems which require fault detection, such as ECU and ADAS.
● Power supply voltage monitoring for control units such as EV inverters and Charge Controllers.
1
R3154N
No. EC-528-210917
SELECTION GUIDE
The detection setting voltages and quality class are user-selectable.
Selection Guide
Product Name
R3154NxxxA-TR-##
Package
Quantity per Reel
Pb Free
Halogen Free
SOT-23-6
3,000 pcs
Yes
Yes
xxx: The combination of an overvoltage detection setting voltage (VOVSET) and an undervoltage detection
setting voltage (VUVSET).
Refer to Product-specific Electrical Characteristics for details.
#: Quality Class
Quality Class
A
R
##
AE
R
Operating Temperature Range
−40°C to 125°C
−40°C to 125°C
Test Temperature
25°C, High
Low, 25°C, High
BLOCK DIAGRAM
VDD
SENSE
INT Regulator
VCC
UVLO
UVCMP
OVCMP
UVCMP
+
－
OVCMP
+
Delay
Circuit
DOUT
－
VREF
TEST
GND
TEST CD
R3154N Block Diagram
2
R3154N
No. EC-528-210917
PIN DESCRIPTIONS
6
5
4
(mark side)
1
2
3
SOT-23-6 Pin Configuration
Pin Descriptions
Pin No.
Symbol
Description
1
VDD
Supply Voltage Pin
2
CD
3
DOUT
Voltage Fault Detection Output Pin (“Low” at detection)
4
TEST
TEST Pin (“Low” at operation check of voltage detection)
5
GND
GND Pin
6
SENSE
Release Delay Time Set Pin (“Open” when not connected)
SENSE Voltage Input Pin
Internal Equivalent Circuit for Each Pin
DOUT
VCC
Driver
TEST
DOUT Pin
VCC
TEST Pin
SENSE
CD
CD Pin
SENSE Pin
3
R3154N
No. EC-528-210917
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings
Symbol
Rating
Unit
Supply Voltage
−0.3 to 50.0
V
Peak Voltage(1)
60
V
CD Pin Output Voltage
−0.3 to 20.0
V
VDOUT
DOUT Pin Output Voltage
−0.3 to 20.0
V
VTEST
TEST Pin Voltage
−0.3 to 20.0
V
VSENSE
SENSE Pin Voltage
−0.3 to 20.0
V
30
mA
VDD
VCD
IDOUT
Parameter
DOUT Pin Output Current
Refer to Appendix
PD
Power Dissipation
Tj
Junction Temperature Range
−40 to 150
°C
Tstg
Storage Temperature Range
−55 to 150
°C
“POWER DISSIPATION”
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage
and may degrade the life time and safety for both device and system using the device in the field. The functional
operation at or over these absolute maximum ratings are not assured.
RECOMMENDED OPERATING CONDITIONS
Recommended Operating Conditions
Symbol
Parameter
Rating
Unit
Operating Voltage
3.0 to 42
V
VSENSE
SENSE Input Voltage
0 to 6.0
V
VTEST
TEST Pin Voltage
0 to 6.0
V
VUP
DOUT Pin Pull-up Voltage
0 to 6.0
V
Ta
Operating Temperature Range
−40 to 125
°C
VDD
RECOMMENDED OPERATING CONDITIONS
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the recommended
operating conditions, even if they are used over such ratings by momentary electronic noise or surge. And the
semiconductor devices may receive serious damage when they continue to operate over the recommended operating
conditions.
(1)
Duration Time: Within 200 ms
4
R3154N
No. EC-528-210917
ELECTRICAL CHARACTERISTICS
VDD = 14 V, CD = 0.01 µF, pulled-up to 5 V with 100 kΩ, unless otherwise specified.
are guaranteed by design engineering at -40°C ≤ Ta ≤ 125°C.
The specifications surrounded by
R3154N (-AE) Electrical Characteristics
Symbol
Parameter
(Ta = 25°C)
Test Conditions
Ta = 25°C
VOVDET
Overvoltage (OV)
Detector Threshold
–40°C ≤ Ta ≤ 125°C
Ta = 25°C
VUVDET
Undervoltage (UV)
Detector Threshold
–40°C ≤ Ta ≤ 125°C
Min.
Typ.
Max.
Unit
0.9 V < VOVSET
x0.995
x1.005
V
VOVSET ≤ 0.9 V
−4.5
+4.5
mV
x1.0075
V
-11.25
+6.75
mV
0.66V < VUVSET x0.995
x1.005
V
+3.3
mV
x1.0075
V
+4.95
mV
0.9 V < VOVSET x0.9875
VOVSET ≤ 0.9 V
VUVSET ≤ 0.66V
-3.3
0.66 V< VUVSET x0.9875
VUVSET ≤ 0.66V
-8.25
VOVHYS
Overvoltage (OV)
Threshold Hysteresis
VOVDET
×0.0025
VOVDET
×0.005
VOVDET
×0.0075
V
VUVHYS
Undervoltage (UV)
Threshold Hysteresis
VUVDET
×0.0025
VUVDET
×0.005
VUVDET
×0.0075
V
2.0
5.0
µA
32
MΩ
ISS
Supply Current
VUVDET < VSENSE < VOVDET
RSENSE
SENSE Pin Resistance(1)
Resistance between SENSE and GND
VUVLO
UVLO Detector Threshold
1.8
2.7
V
UVLO Threshold Hysteresis
0.1
0.3
V
1.7
V
VUVLOHYS
VDDL
DOUT Pin Output
Low-operating Voltage(2)
IOUT
NMOS Driver
Output Current
VDD = 3.0, VDS = 0.1 V
ILEAK
NMOS Driver
Leakage Current
VDOUT = 5.5 V
VTESTH
TEST Pin
Input Voltage, "High"
VTESTL
TEST Pin
Input Voltage, "Low"
tDELAY
Release Delay Time
3
0.37
0.75
0
mA
1
V
1.6
2.5
µA
4
0.5
V
8
ms
All test items listed in Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C)
(1)
(2)
Typ. value varies depending on the set value of detector threshold.
Minimum value of power supply voltage when an output voltage becomes 0.1V or less at detection.
(Pulled-up resistance: 100 kΩ, Pulled-up voltage: 5 V)
5
R3154N
No. EC-528-210917
VDD = 14 V, CD = 0.01 µF, pulled-up to 5 V with 100 kΩ, unless otherwise specified.
R3154N (-R) Electrical Characteristics
Symbol
Parameter
(-40°C ≤ Ta ≤ 125°C)
Test Conditions
Ta = 25°C
VOVDET
Overvoltage (OV)
Detector Threshold
–40°C ≤ Ta ≤ 125°C
Ta = 25°C
VUVDET
Undervoltage (UV)
Detector Threshold
–40°C ≤ Ta ≤ 125°C
Max.
Unit
0.9 V < VOVSET
x0.995
x1.005
V
VOVSET ≤ 0.9 V
−4.5
+4.5
mV
x1.0075
V
-11.25
+6.75
mV
0.66V < VUVSET x0.995
x1.005
V
+3.3
mV
x1.0075
V
+4.95
mV
0.9 V < VOVSET x0.9875
VOVSET ≤ 0.9 V
VUVSET ≤ 0.66V
-3.3
0.66 V< VUVSET x0.9875
VUVSET ≤ 0.66V
-8.25
Overvoltage (OV)
Threshold Hysteresis
VOVDET
×0.0025
VOVDET
×0.005
VOVDET
×0.0075
V
VUVHYS
Undervoltage (UV)
Threshold Hysteresis
VUVDET
×0.0025
VUVDET
×0.005
VUVDET
×0.0075
V
2.0
5.0
µA
32
MΩ
Supply Current
VUVDET < VSENSE < VOVDET
RSENSE
SENSE Pin Resistance(1)
Resistance between SENSE and GND
VUVLO
UVLO Detector Threshold
1.8
2.7
V
UVLO Threshold Hysteresis
0.1
0.3
V
1.7
V
VUVLOHYS
(2)
Typ.
VOVHYS
ISS
(1)
Min.
VDDL
DOUT Pin Output
Low-operating Voltage(2)
IOUT
NMOS Driver
Output Current
VDD = 3.0, VDS = 0.1 V
ILEAK
NMOS Driver
Leakage Current
VDOUT = 5.5 V
VTESTH
TEST Pin
Input Voltage, "High"
VTESTL
TEST Pin
Input Voltage, "Low"
tDELAY
Release Delay Time
3
0.37
0.75
0
mA
1
1.6
2.5
µA
V
4
0.5
V
8
ms
Typ. value varies depending on the set value of detector threshold.
Minimum value of power supply voltage when an output voltage becomes 0.1V or less at detection.
(Pulled-up resistance: 100 kΩ, Pulled-up voltage: 5 V)
6
R3154N
No. EC-528-210917
VDD = 14 V, CD = 0.01 µF, pulled-up to 5 V with 100 kΩ, unless otherwise specfied.
The specifications surrounded by
are guaranteed by design engineering at -40°C ≤ Ta ≤ 125°C.
R3154N-AE Product-specific Electrical Characteristics
(Ta = 25°C)
Product
name
VOVDET (V)
VUVDET (V)
Min.
Typ.
Max.
Min.
Typ.
Max.
R3154N201A
0.85550
0.86
0.86450
0.76615
0.77
0.77385
R3154N202A
0.74550
0.75
0.75450
0.54670
0.55
0.55330
R3154N203A
3.52230
3.54
3.55770
3.03475
3.05
3.06525
R3154N204A
1.32335
1.33
1.33665
1.16415
1.17
1.17585
R3154N205A
1.07460
1.08
1.08540
0.91540
0.92
0.92460
R3154N206A
0.86550
0.87
0.87450
0.72635
0.73
0.73365
R3154N207A
0.81550
0.82
0.82450
0.66665
0.67
0.67335
VOVDET (V)
VUVDET (V)
(-40°C ≤ Ta ≤ 125°C)
VOVHYS (V)
VUVHYS (V)
Product
name
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
R3154N201A
0.84875
0.86
0.86675
0.76038
0.77
0.77577
0.00215
0.00430
0.00645
0.00193
0.00385
0.00577
R3154N202A
0.73875
0.75
0.75675
0.54175
0.55
0.55495
0.00188
0.00375
0.00562
0.00138
0.00275
0.00412
R3154N203A
3.49575
3.54
3.56655
3.01188
3.05
3.07287
0.00885
0.01770
0.02655
0.00763
0.01525
0.02287
R3154N204A
1.31338
1.33
1.33997
1.15538
1.17
1.17877
0.00333
0.00665
0.00997
0.00293
0.00585
0.00877
R3154N205A
1.06650
1.08
1.08810
0.90850
0.92
0.92690
0.00270
0.00540
0.00810
0.00230
0.00460
0.00690
R3154N206A
0.85875
0.87
0.87675
0.72088
0.73
0.73547
0.00218
0.00435
0.00652
0.00183
0.00365
0.00547
R3154N207A
0.80875
0.82
0.82675
0.66163
0.67
0.67502
0.00205
0.00410
0.00615
0.00168
0.00335
0.00502
7
R3154N
No. EC-528-210917
VDD = 14 V, CD = 0.01 µF, pulled-up to 5 V with 100 kΩ, unless otherwise specfied.
R3154N-R Product-specific Electrical Characteristics
(Ta = 25°C)
Product
name
VOVDET (V)
VUVDET (V)
Min.
Typ.
Max.
Min.
Typ.
Max.
R3154N201A
0.85550
0.86
0.86450
0.76615
0.77
0.77385
R3154N202A
0.74550
0.75
0.75450
0.54670
0.55
0.55330
R3154N203A
3.52230
3.54
3.55770
3.03475
3.05
3.06525
R3154N204A
1.32335
1.33
1.33665
1.16415
1.17
1.17585
R3154N205A
1.07460
1.08
1.08540
0.91540
0.92
0.92460
R3154N206A
0.86550
0.87
0.87450
0.72635
0.73
0.73365
R3154N207A
0.81550
0.82
0.82450
0.66665
0.67
0.67335
VOVDET (V)
VUVDET (V)
(-40°C ≤ Ta ≤ 125°C)
VOVHYS (V)
VUVHYS (V)
Product
name
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
R3154N201A
0.84875
0.86
0.86675
0.76038
0.77
0.77577
0.00215
0.00430
0.00645
0.00193
0.00385
0.00577
R3154N202A
0.73875
0.75
0.75675
0.54175
0.55
0.55495
0.00188
0.00375
0.00562
0.00138
0.00275
0.00412
R3154N203A
3.49575
3.54
3.56655
3.01188
3.05
3.07287
0.00885
0.01770
0.02655
0.00763
0.01525
0.02287
R3154N204A
1.31338
1.33
1.33997
1.15538
1.17
1.17877
0.00333
0.00665
0.00997
0.00293
0.00585
0.00877
R3154N205A
1.06650
1.08
1.08810
0.90850
0.92
0.92690
0.00270
0.00540
0.00810
0.00230
0.00460
0.00690
R3154N206A
0.85875
0.87
0.87675
0.72088
0.73
0.73547
0.00218
0.00435
0.00652
0.00183
0.00365
0.00547
R3154N207A
0.80875
0.82
0.82675
0.66163
0.67
0.67502
0.00205
0.00410
0.00615
0.00168
0.00335
0.00502
8
R3154N
No. EC-528-210917
TYPICAL APPLICATION CIRCUIT
VDD
VUP
100 kΩ
VDD
CD
CD
SENSE
DOUT
R3154N
TEST
VDD
R1
RESET
←Signal
MPU
GND
GND
R3154N Typical Application Circuit
Recommended External Components
Symbol
CD
R1
Description
A capacitor should be selected corresponding to the set Release Delay Time. Refer to
“Delay in Operation and Release Delay Time (tDELAY)” in THEORY OF OPERATION for details.
When minimizing the release delay time, layout the circuit without any capacitor.
The “Low” voltage of the DOUT output is determined by the division ratio of the on resistance
of the NMOS driver and the pull-up resistance value (R1). The on-resistance of the NMOS
driver is calculated from the “NMOS driver output current”. Select the pull-up resistance value
(R1) to bring the “Low” voltage of the DOUT output to the desired voltage.
The “High” level of the DOUT output is determined by the division ratio of the leakage current
of the NMOS driver and the pull-up resistance value (R1).
The leakage current of the NMOS driver is calculated from the “NMOS driver leakage current”.
Confirm if the “High” voltage of the DOUT output is the desired voltage.
“Electrical Characteristic” is evaluated in conditions that pull-up voltage = 5 V and R1 = 100 kΩ.
9
R3154N
No. EC-528-210917
THEORY OF OPERATION
VDD
VSENSE
VUVLO+VUVLOHYS
VUVREL
VUVLO
VOVDET
VOVREL
VUVDET
UVLO Release Voltage: VUVLO+VUVLOHYS
UVLO Detector Threshold: VUVLO
Overvoltage Detector Threshold: VOVDET
Overvoltage Release Voltage： VOVREL
Undervoltage Release Voltage： VUVREL
Undervoltage Detector Threshold： VUVDET
VUVREL
CD
tDELAY
tDELAY
tDELAY depends on the capacity
connected to the CD pin.
tDELAY
DOUT
(1)
(2)
(3)
(4)
(1)
(5)
R3154N Timing Chart
(1) When the SENSE pin voltage (VSENSE) exceeds the undervoltage release voltage (VUVREL), the DOUT pin
outputs “High” after the release delay time (tDELAY).
(2) When VSENSE exceeds the overvoltage detector threshold (VOVDET) by increasing of the voltage, the DOUT
pin outputs “Low” after the detection delay time (Typ. 20 µs) and this triggers the overvoltage detecting
state.
(3) When VSENSE decreases less than the overvoltage release voltage (VOVREL), the DOUT pin outputs “High”
after the release delay time (tDELAY).
(4) When VSENSE decreases less than the undervoltage detector threshold (VUVDET), the DOUT pin outputs
“Low” after the detection delay time (Typ. 20 µs) and this triggers the undervoltage detecting state.
(5) When the VDD pin voltage (VDD) decreases less than the UVLO detector threshold (VUVLO), the DOUT pin
outputs “Low”. Note that DOUT cannot maintain “Low” when the VDD pin voltage drops further and
becomes lower than VDDL.
10
R3154N
No. EC-528-210917
Delay Operation and Release Delay Time (tDELAY)
At Undervoltage Detection
A higher voltage than the undervoltage release voltage (VUVREL) supplied to the SENSE pin triggers charging
of the external capacitor (CD capacitance), then the CD pin voltage (VCD) increases. The DOUT pin voltage
(VDOUT) maintains “Low” until VCD reaches the CD pin threshold voltage (VTCD). When VCD exceeds VTCD, VDOUT
transitions from “Low” to “High”. The release delay time (tDELAY) is the period from the time the SENSE pin
voltage (VSENSE) exceeds VUVREL to a rising edge of VDOUT. VDOUT transitions from “Low” to “High” and it leads to
discharging of the CD capacitor. Without the CD capacitor, it becomes the short tDELAY (Typ. 20 μs) depending
on the circuit delay and CD pin stray capacity. When the higher voltage than VUVDET is supplied to the SENSE
pin, the detection delay time (tPHL), which is the period that VDOUT transitions from “High” to “Low”, remains
constant regardless of the capacitance value of the external capacitor.
VUVREL
VUVDET
SENSE Pin
VTCD
CD Pin Voltage
GND
DOUT Pin
GND
Release Delay Time
(tDELAY)
Detection Delay Time
(tPHL)
Undervoltage Release Delay Timing Chart
Calculation of Release Delay Time (tDELAY) at Undervoltage Detection
The typical value of the release delay time (tDELAY) with the capacitance of the external capacitor (CD) is
calculated in the following equation:
tDELAY (s) = 0.73 × CD (F) / (1.8×10-6)
tDELAYn is the period until the DOUT pin voltage reaches 2.5 V after the pulse voltage of (VUVDET + VOVDET) /2 V
increased from (VUVDET x 0.97) V is supplied to the SENSE pin when DOUT pin is pulled up to 5 V with 100 kΩ.
(VUVDET+ VOVDET) /2 V
VUVREL
VUVDET
(VUVDET x 0.97) V
5.0 V
SENSE Pin
DOUT Pin
2.5 V
GND
tPHL
tDELAY
11
R3154N
No. EC-528-210917
At Overvoltage Detection
A lower voltage than the overvoltage release voltage (VOVREL) supplied to the SENSE pin triggers charging of
the external capacitor (CD capacitance), then the CD pin voltage (VCD) increases. The DOUT pin voltage
(VDOUT) maintains “Low” until VCD reaches the CD pin threshold voltage (VTCD). When VCD exceeds VTCD, VDOUT
is inverted from “Low” to “High”. The release delay time (tDELAY) is the period from the time the SENSE pin
voltage (VSENSE) falls below VOVREL to a rising edge of VDOUT. VDOUT transitions to “High”. VDOUT transitions from
“Low” to “High” and it leads to discharging of the CD capacitor. Without the CD capacitor, it becomes the short
tDELAY (Typ. 20 μs) depending on the circuit delay and CD pin stray capacity. When the higher voltage than
VOVDET is supplied to the SENSE pin, the detection delay time (tPHL), which is the period that VDOUT transitions
from “High” to “Low”, remains constant regardless of the capacitance value of the external capacitor.
VOVDET
VOVREL
SENSE pin
VTCD
CD Pin Voltage
GND
DOUT Pin
GND
Detection Delay Time
(tPHL)
Release Delay Time
(tDELAY)
Overvoltage Release Delay Timing Chart
Calculation of Release Delay Time (tDELAY) at Overvoltage Detection
The typical value of the release delay time (tDELAY) with the capacitance of the external capacitor (CD) is
calculated in the following equation:
tDELAY (s) = 0.73 × CD (F) / (1.8×10-6)
tDELAY is the period until the DOUT pin voltage reaches 2.5 V after the pulse voltage of (VUVDET + VOVDET) /2 V
decreased from (VOVDET x 1.03) V is supplied to the SENSE pin when DOUT pin is pulled up to 5 V with 100 kΩ.
(VOVDET x 1.03) V
VOVDET
VOVREL
(VUVDET+ VOVDET) /2 V
SENSE Pin
5.0 V
DOUT Pin
2.5 V
GND
tPHL
tDELAY
12
R3154N
No. EC-528-210917
Operation Check of Voltage Detection Function with TEST Pin
Voltage Detection Function is to set DOUT to “Low” by inputting “Low” to the TEST pin, even when the SENSE
pin voltage (VSENSE) is within a range of the release voltage. If the DOUT does not become “Low” even VSENSE
is within the release voltage range and “Low” signal is input to the TEST pin, it can be judged that the IC has
a fault. To cancel this function, set the TEST pin to “High” voltage or “Open”. When the TEST pin is open, the
DOUT becomes “High” with pulled-up voltage in the IC.
VSENSE
VTEST
VOVREL
VUVREL
VTESTL
tDELAY
VCD
VTCD
VDOUT
(1)
(2)
TEST Pin Timing Chart
(1) When inputting “Low” to the TEST pin, the DOUT is fixed to “Low” after the detection delay time
(Typ. 20 µs) even if the SENSE pin voltage (VSENSE) is within a range of the release voltage.
The “Low” signal of TEST pin voltage should be 50 µs or more.
(2) When the TEST pin transitions from “Low” to “High”, the DOUT pin outputs “High” after the release delay
time (tDELAY). At this time, the TEST pin should maintain “High” for the release delay time or longer. Even
when the external capacitor (CD capacitance) is not connected, it should maintain “High” for 50 µs or more.
13
R3154N
No. EC-528-210917
APPLICATION INFORMATION
The concept of “H” level of TEST pin
The R3154 has a voltage regulator (INT regulator) inside the IC. Major functions of the IC are operated by
VCC (Typ. 3.3V) generated by INT regulator from input voltage, VDD.
TEST pin is pulled up to VCC voltage via 100kΩ as it can be set to open when TEST pin is unused.
When the voltage detect function is in use, when input “Low” voltage to TEST pin, then DOUT pin becomes
“Low”. But when the voltage detect function is in no use, if “High” voltage is input to TEST pin, the current
which is determined by the following equation flows continuously. This makes the supply current increase.
(VCC – TEST “High” voltage) /100kΩ
(VCC＞TEST “High” voltage)
Unless there’s a specific reason to avoid an OPEN pin condition, it’s recommended to be left OPEN when
TEST pin is not used.
As the circuit configuration prevents a reverse current from TEST pin to VCC, even when being used in
condition of TEST “High” voltage＞VCC, supply current doesn’t increase and VCC voltage doesn’t vary.
14
R3154N
No. EC-528-210917
TYPICAL CHARACTERISTICS
Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed.
1) UV/OV Detection Release Voltage vs. Temperature
VDD = 14 V,
VUVSET = 3.3V
VOVSET = 3.7 V
VOVDET/VOVREL [V]
3.774
UV Release Voltage
3.333
3.300
UV Detection Voltage
3.267
3.234
-40 -25
0
25
50
Ta [ºC]
75
OV Release Voltage
-40 -25
0
25
50
Ta [ºC]
75
105 125
VUVDET/VUVREL [V]
0.7650
0.5555
UV Release Voltage
0.7575
0.5500
OV Detection Voltage
0.7500
UV Detection Voltage
0.5445
-40 -25
0
25
50
Ta [ºC]
75
105 125
VUVSET = 3.15V
0.7425
0.7350
OV Release Voltage
-40 -25
0
25
50
Ta [ºC]
75
105 125
VOVSET = 3.45 V
3.2130
VOVDET/VOVREL [V]
VUVDET/VUVREL [V]
3.5190
UV Release Voltage
3.1815
3.4845
3.1500
OV Detection Voltage
3.4500
UV Detection Voltage
3.1185
3.0870
3.663
VOVSET = 0.75 V
0.5610
0.5390
OV Detection Voltage
3.700
3.626
105 125
VUVSET = 0.55V
3.737
VOVDET/VOVREL [V]
VUVDET/VUVREL [V]
3.366
3.4155
-40 -25
0
25
50
Ta [ºC]
75
105 125
3.3810
OV Release Voltage
-40 -25
0
25
50
Ta [ºC]
75
105 125
15
R3154N
No. EC-528-210917
2) UV/OV Detection Voltage vs. Input Voltage
VDD = 14 V,
VUVSET = 3.3V
3.366
3.333
3.737
3.300
0
6
105ºC
125ºC
12
18
25ºC
105ºC
125ºC
24
30
Input Voltage VIN [V]
36
42
3.626
Broken Line: Release Voltage
0
6
12
18
24
30
Input Voltage VIN [V]
36
42
VOVSET = 0.75 V
0.5610
0.7650
VOVDET/VOVREL [V]
VUVDET/VUVREL [V]
Broken Line: Release Voltage
0.5555
0.7575
0.5500
-40ºC
25ºC
105ºC
125ºC
0.7500
0.5445
0
6
12
18
0.7425
-40ºC
25ºC
105ºC
125ºC
24
30
Input Voltage VIN [V]
36
42
VUVSET = 3.15V
0.7350
Broken Line: Release Voltage
0
6
12
18
24
30
Input Voltage VIN [V]
36
42
VOVSET = 3.45 V
3.2130
3.5190
VOVDET/VOVREL [V]
VUVDET/VUVREL [V]
Broken Line: Release Voltage
3.1815
3.4845
3.1500
-40ºC
25ºC
105ºC
125ºC
3.4500
3.1185
3.0870
25ºC
3.663
-40ºC
VUVSET = 0.55V
0.5390
-40ºC
3.700
3.267
3.234
3.774
VOVDET/VOVREL [V]
VUVDET/VOVREL [V]
Broken Line: Release Voltage
VOVSET = 3.7 V
0
6
12
18
3.4155
-40ºC
25ºC
105ºC
125ºC
24
36
30
Input Voltage VIN [V]
42
3.3810
Broken Line: Release Voltage
0
6
12
18
24
30
Input Voltage VIN [V]
36
42
16
R3154N
No. EC-528-210917
3) Supply Current vs. Input Voltage
VUVSET = 3.3 V / VOVSET = 3.7 V, VSENSE = 3.5V
-40ºC
6
Supply Current ISS [μA]
Supply Current ISS [μA]
7
4) Supply Current vs. VSENSE
VUVSET = 3.3 V / VOVSET = 3.7 V, VDD = 14 V
7
25ºC
5
105ºC
4
125ºC
3
2
1
0
0
6
12
18
24
30
36
Input Voltage VDD [V]
42
6
-40ºC
25ºC
5
105ºC
4
125ºC
3
2
1
0
0
1
2
3
4
5
Input Voltage VSENSE [V]
6
DOUT Voltage VDOUT [V]
5) DOUT Pin Voltage vs. Input Voltage
VUVSET = 3.3 V/VOVSET = 3.7 V, VSENSE = 3.5V, Ta = 25ºC
6
5
4
3
2
1
0
0
6
12
18
24
30
36
Input Voltage VDD [V]
42
VUVSET = 0.55 V / VOVSET = 0.75 V
6
DOUT Voltage VDOUT [V]
DOUT Voltage VDOUT [V]
6) DOUT Pin Voltage vs. VSENSE
VDD = 14 V, Ta = 25ºC,
VUVSET = 3.3 V / VOVSET = 3.7 V
5
4
3
2
1
0
0
1
2
3
4
5
Input Voltage VSENSE [V]
6
6
5
4
3
2
1
0
0
1
2
3
4
5
Input Voltage VSENSE [V]
6
17
R3154N
7) Driver Output Current vs. Input Voltage
VSENSE = 0 V, DOUT = 0.1 V
8) Driver Output Current vs. DOUT Pin Voltage
VSENSE = 0 V, Ta = 25ºC
Driver Output Current [mA]
Driver Output Current [mA]
No. EC-528-210917
6
100
5
4
3
2
1
0
0
6
12
18
-40ºC
25ºC
105ºC
125ºC
24
30
Input Voltage VDD [V]
36
42
80
VDD = 14 V
60
40
VDD = 2.9 V
20
0
0
1
2
3
4
5
6
DOUT Voltage VDOUT [V]
10) Release Delay Time vs.
External Capacitor for CD Pin
VUVSET = 3.3 V/VOVSET = 3.7 V, VDD = 14 V, CD = 10 nF VUVSET = 3.3 V/VOVSET = 3.7 V, VDD = 14 V, Ta = 25ºC
5.5
100
UV Release
5.0
OV Release
4.5
4.0
-40 -25
0
25
50
Ta [ºC]
75
105 125
Output delay time for Release
[ms]
11) Release Delay Time vs. Input Voltage
CD = 10 nF
VSENSE = 0 V → (VUVSET + VOVSET) / 2
1
0.1
6
5
4
3
2
-40ºC
25ºC
1
105ºC
125ºC
0
6
12
18
24
30
Input Voltage VDD [V]
36
OV Release
0.001
0.001 0.01 0.1
1
CD [nF]
10
100
1000
VSENSE = 5.5 V → (VUVSET + VOVSET) / 2
7
0
UV Release
10
0.01
3.5
3.0
Output delay time for Release
[ms]
1000
6.0
42
Output delay time for Release
[ms]
Output delay time for Release
[ms]
9) Release Delay Time vs. Temperature
7
6
5
4
3
2
-40ºC
25ºC
1
105ºC
125ºC
0
0
6
12
18
24
30
Input Voltage VDD [V]
36
42
18
R3154N
No. EC-528-210917
VSENSE = 3.5 V → 3.2 V (UV), 3.5 V → 3.81 V (OV)
40
30
OV Detection
20
UV Detection
10
0
-40 -25
0
25
50
Ta [ºC]
75
105 125
Output Delay time for Reset
[μs]
Output Delay time for Reset
[μs]
12) Detection Delay Time vs. Temperature
VDD = 14 V, VUVSET = 3.3 V / VOVSET = 3.7 V
VSENSE = 3.5 V → 0 V (UV), 3.5 V → 5.5 V (OV)
70
60
OV Detection
50
40
30
20
UV Detection
-40 -25
0
25
50
Ta [ºC]
75
105 125
Pulse Width [μs]
13) SENSE Pulse Width vs. Over Drive Voltage
VDD = 14 V, VUVSET = 3.3 V / VOVSET = 3.7 V, Ta = 25ºC
180
160
140
120
100
80
60
40
20
0
OV
Occurrence of reset signal
in the area crossing OV
and UV thresholds
Over Drive Voltage
VOVSET
VSENSE
Pulse Width
VSENSE
UV
VUVSET
10
100
Over Drive Voltage
1000
Over Drive Voltage [mV]
40
5.5
20
5.0
4.5
10
DOUT Voltage
0
100
200
time [ms]
300
400
0
Input Voltage
15
10
5.5
5
5.0
0
4.5
DOUT Voltage
0
100
200
time [ms]
300
400
Input Voltage VDD [V]
30
20
DOUT Voltage VOUT [V]
Input Voltage
Input Voltage VDD [V]
DOUT Voltage VOUT [V]
14) Load Dump
15) Cranking
VUVSET = 3.3V / VOVSET= 3.7V, VSENSE= 3.5V, Ta = 25ºC VUVSET= 3.3V / VOVSET= 3.7V, VSENSE= 3.5V, Ta = 25ºC
-5
19
POWER DISSIPATION
SOT-23-6
PD-SOT-23-6-(125150)-JE-A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following measurement conditions are based on JEDEC STD. 51-7.
Measurement Conditions
Item
Measurement Conditions
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions
76.2 mm × 114.3 mm × 0.8 mm
Copper Ratio
Outer Layer (First Layer): Less than 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square
Through-holes
0.3 mm × 7 pcs
Measurement Result
(Ta = 25°C, Tjmax = 150°C)
Item
Measurement Result
Power Dissipation
830 mW
Thermal Resistance (ja)
ja = 150°C/W
Thermal Characterization Parameter (ψjt)
ψjt = 51°C/W
ja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
1000
900
830
Power Dissipation PD (mW)
800
700
600
500
400
300
200
100
0
0
25
50
75
100
Ambient Temperature (°C)
125
150
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
i
PACKAGE DIMENSIONS
SOT-23-6
DM-SOT-23-6-JE-B
2.9±0.2
+0.2
1.1-0.1
1.9±0.2
4
1
2
0 to 0.1
0.2MIN.
5
+0.2
1.6-0.1
6
0.8±0.1
(0.95)
2.8±0.3
(0.95)
3
+0.1
0.4-0.2
+0.1
0.15-0.05
Unit : mm
SOT-23-6 Package Dimensions (Unit: mm)
i
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