R5527K SERIES
3A Load Switch IC
NO. EA-312-201030
OUTLINE
The R5527K is an N-channel load switch IC with low supply current, Typ. 40µA. R5527K realizes low onresistance by using Nch transistor for the driver. In addition, R5527K001x has a reverse current blocking
function at on/off state, and R5527K002x has a reverse current blocking function at off state. The R5527K is an
ideal load switch IC to supply power from the battery to the load circuit. The R5527K is available in an ultrasmall DFN (PLP)1612-4D package which can achieve high-density mounting on boards.
FEATURES
• Input Voltage Range ·································································· 1.8V to 5.5V
• Typical On Resistance································································ 48mΩ (VIN=5V)
46mΩ (VIN=4.5V)
45mΩ (VIN=3.8V)
68mΩ (VIN=1.8V)
• Slew Rate/Inrush Control with tR ··················································· Min. 1.5ms
• 3A Maximum Continuous Current Capability
• Low Off Switch Current ································································ Max.1µA (R5527K00xB/D)
Max.2µA (R5527K001A/C)
• Reverse Current Blocking (RCB) ··················································· At Off/On-State (R5527K001x)
At Off-State (R5527K002x)
• Package··················································································· DFN(PLP)1612-4D
APPLICATION
• Smart Phones, Tablet PCs
• Storage, Portable Devices
1
R5527K
NO. EA-312-201030
BLOCK DIAGRAMS
VIN
VOUT
Charge
Pump
Soft
Start
VIN
Charge
Pump
RCB
ON
VOUT
GND
Soft
Start
RCB
ON
GND
R5527K001A
R5527K001C
VOUT VIN
VIN
Charge
Pump
Soft
Start
VOUT
Charge
Pump
RCB
Soft
Start
RCB
GND ON
ON
R5527K001B
VIN
R5527K001D
VOUT
Charge
Pump
Soft
Start
ON
VIN
VOUT
Charge
Pump
RCB
GND
R5527K002B
GND
Soft
Start
ON
RCB
GND
R5527K002D
2
R5527K
NO. EA-312-201030
PIN DESCRIPTION
• DFN(PLP)1612-4D
Top View
4
3
Bottom View
3
4
*1
1
*1
2
2
1
Pin No
Symbol
Pin Description
1
VIN
2
GND
3
ON
ON/OFF Control Pin, Active High/Low
4
VOUT
Switch Output Pin
Supply Input Pin
Ground Pin
The tab on the bottom of the package enhances thermal performance and is electrically connected to GND (substrate level).
It is recommended that the tab be connected to the ground plane on the board, or otherwise be left floating.
SELECTION GUIDE
The ON pin polarity, the auto-discharge function(1) and the reverse current blocking (RCB) at on state for the
ICs are user-selectable options.
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
R5527K00∗∗-TR
DFN(PLP)1612-4D
5,000 pcs
Yes
Yes
** : Specify a combination of the ON pin polarity, the auto-discharge function and the RCB at on state .
**
1A
1B
1C
1D
2B
2D
(1)
ON pin Polarity
“L” Active
“H” Active
“L” Active
“H” Active
“H” Active
“H” Active
Auto-discharge
No
No
Yes
Yes
No
Yes
RCB at On-State
Yes
Yes
Yes
Yes
No
No
Auto-Discharge function quickly lowers the output voltage to 0V by releasing the electrical charge in the external capacitor
when the ON signal is switched from the active mode to the standby mode.
3
R5527K
NO. EA-312-201030
ABSOLUTE MAXIMUM RATINGS
Symbol
*1
Item
Rating
Unit
VIN
Input Voltage
-0.3 to 6.0
V
VON
Input Voltage (ON Pin)
-0.3 to 6.0
V
VOUT
Output Voltage
-0.3 to 6.0
V
IOUT
Output Current
3.0
A
PD
Power Dissipation
(DFN(PLP)1612-4D)*1
1810
mW
Ta
Ambient Tmeprature
-40 to 85
°C
Tstg
Storage Temerature
-55 to 125
°C
JEDEC STD. 51
Test Land Pattern
Refer to PACKAGE INFORMATION for detailed information.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages
and may degrade the life time and safety for both device and system using the device in the field. The functional operation
at or over these absolute maximum ratings are not assured.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended
operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions,
even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices
may receive serious damage when they continue to operate over the recommended operating conditions.
4
R5527K
NO. EA-312-201030
ELECTRICAL CHARACTERISTICS
VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted.
The specifications surrounded by
are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC.
R5527K001A
Symbol
VIN
(Ta=25°C)
Item
Conditions
Max.
Unit
5.5
V
1
2
µA
Ta=25°C
1
2
µA
Ta=85°C
1
10
µA
µA
Input Voltage
Min.
Typ.
1.8
IQ(OFF)
Off Supply Current
VON=VIN,VOUT=OPEN
ISD
Shutdown Current
VON=VIN,
VOUT=GND
IQ
Quiescent Current
VON=GND, IOUT=0mA
40
70
VIN=5V, IOUT=1A
48
65
VIN=4.5V, IOUT=1A
46
VIN=3.8V, IOUT=1A
45
VIN=3.3V, IOUT=500mA
45
VIN=2.5V, IOUT=500mA
51
VIN=1.8V, IOUT=250mA
68
RON
On Resistance
60
1.7
mΩ
VIH
ON Input Logic High Voltage
VIN=1.8V to 5.5V
VIL
ON Input Logic Low Voltage
VIN=1.8V to 5.5V
ION
ON Input Leakage
VON=VIN
VT_RCB
RCB Protection Trip Point
VOUT - VIN
45
mV
VR_RCB
RCB Protection Release Trip Point
VIN - VOUT
25
mV
70
mV
RCB Hysteresis
ISD_OUT
VOUT Shutdown Current
tDON*1
Turn-On Delay
tR*1
VOUT Rise Time
tON*1
Turn-On Time
VON=GND, VOUT=5.5V,
VIN=Short to GND
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="H"→"L" to
VOUT=VIN x 10%
VIN=3.8V, RL=150Ω, CL=100μF
Time from VOUT=VIN x 10% to
VIN x 90%
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="H"→"L" to
VOUT=VIN x 90%
V
1.2
V
1
µA
10
µA
0.5
2.5
ms
1.5
5.0
ms
2.0
7.5
ms
All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC)
except RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis.
*1 Rise time from V
OUT=0V is defined. Refer to the TIMING CHART for detailed information.
5
R5527K
NO. EA-312-201030
VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted.
The specifications surrounded by
are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC.
R5527K001B
Symbol
VIN
(Ta=25°C)
Item
Conditions
Min.
Max.
Unit
5.5
V
0.5
1
µA
Ta=25°C
0.5
1
µA
Ta=85°C
0.5
10
µA
µA
Input Voltage
Typ.
1.8
IQ(OFF)
Off Supply Current
VON=GND,VOUT=OPEN
ISD
Shutdown Current
VON=GND,
VOUT=GND
IQ
Quiescent Current
VON=VIN, IOUT=0mA
40
70
VIN=5V, IOUT=1A
48
65
VIN=4.5V, IOUT=1A
46
VIN=3.8V, IOUT=1A
45
VIN=3.3V, IOUT=500mA
45
VIN=2.5V, IOUT=500mA
51
VIN=1.8V, IOUT=250mA
68
RON
On Resistance
60
mΩ
VIH
ON Input Logic High Voltage
VIN=1.8V to 5.5V
VIL
ON Input Logic Low Voltage
VIN=1.8V to 5.5V
ION
ON Input Leakage
VON=GND
RON_PD
Pull-Down Resistance at ON Pin
VIN=VON=1.8V to 5.5V
3
MΩ
VT_RCB
RCB Protection Trip Point
VOUT - VIN
45
mV
VR_RCB
RCB Protection Release Trip Point VIN - VOUT
25
mV
RCB Hysteresis
70
mV
ISD_OUT
VOUT Shutdown Current
tDON*1
Turn-On Delay
tR*1
VOUT Rise Time
tON*1
Turn-On Time
VON=GND, VOUT=5.5V,
VIN=Short to GND
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="L"→"H" to
VOUT=VIN x 10%
VIN=3.8V, RL=150Ω, CL=100μF
Time from VOUT=VIN x 10% to
VIN x 90%
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="L"→"H" to
VOUT=VIN x 90%
V
1.7
1.2
V
1
µA
10
µA
0.5
2.5
ms
1.5
5.0
ms
2.0
7.5
ms
All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except
RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis.
*1 Rise time from V
OUT=0V is defined. Refer to the TIMING CHART for detailed information.
6
R5527K
NO. EA-312-201030
VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted.
The specifications surrounded by
are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC.
R5527K001C
Symbol
(Ta=25°C)
Item
Conditions
VIN
Input Voltage
ISD
Shutdown Current
VON=VIN,
VOUT=GND
IQ
Quiescent Current
RON
On Resistance
Min.
Typ.
1.8
Max.
Unit
5.5
V
Ta=25°C
1
2
µA
Ta=85°C
1
10
µA
VON=GND, IOUT=0mA
40
70
µA
VIN=5V, IOUT=1A
48
65
VIN=4.5V, IOUT=1A
46
VIN=3.8V, IOUT=1A
45
VIN=3.3V, IOUT=500mA
45
VIN=2.5V, IOUT=500mA
51
VIN=1.8V, IOUT=250mA
68
60
mΩ
VIH
ON Input Logic High Voltage
VIN=1.8V to 5.5V
VIL
ON Input Logic Low Voltage
VIN=1.8V to 5.5V
ION
ON Input Leakage
VON=VIN
VT_RCB
RCB Protection Trip Point
VOUT - VIN
45
mV
VR_RCB
RCB Protection Release Trip Point
VIN - VOUT
25
mV
70
mV
RCB Hysteresis
ISD_OUT
VOUT Shutdown Current
VON=GND, VOUT=5.5V,
VIN=Short to GND
tDON*1
Turn-On Delay
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="H"→"L" to
VOUT=VIN x 10%
tR*1
VOUT Rise Time
tON*1
RLOW
V
1.7
1.2
V
1
µA
10
µA
0.5
2.5
ms
VIN=3.8V, RL=150Ω, CL=100μF
Time from VOUT=VIN x 10% to
VIN x 90%
1.5
5.0
ms
Turn-On Time
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="H"→"L" to
VOUT=VIN x 90%
2.0
7.5
ms
Nch. On Resistance for
Auto-Discharge
VIN=VON=5.0V, VOUT=0.1V
20
Ω
All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except
RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis.
*1 Refer to the TIMING CHART for detailed information.
7
R5527K
NO. EA-312-201030
VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted.
The specifications surrounded by
are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC.
R5527K001D
Symbol
(Ta=25°C)
Item
Conditions
VIN
Input Voltage
ISD
Shutdown Current
VON=GND,
VOUT=GND
IQ
Quiescent Current
RON
On Resistance
Min.
Typ.
1.8
Max.
Unit
5.5
V
Ta=25°C
0.5
1
µA
Ta=85°C
0.5
10
µA
VON=VIN, IOUT=0mA
40
70
µA
VIN=5V, IOUT=1A
48
65
VIN=4.5V, IOUT=1A
46
VIN=3.8V, IOUT=1A
45
VIN=3.3V, IOUT=500mA
45
VIN=2.5V, IOUT=500mA
51
VIN=1.8V, IOUT=250mA
68
60
mΩ
VIH
ON Input Logic High Voltage
VIN=1.8V to 5.5V
VIL
ON Input Logic Low Voltage
VIN=1.8V to 5.5V
ION
ON Input Leakage
VON=GND
RON_PD
Pull-Down Resistance at ON Pin
VIN=VON=1.8V to 5.5V
3
MΩ
VT_RCB
RCB Protection Trip Point
VOUT - VIN
45
mV
VR_RCB
RCB Protection Release Trip Point
VIN - VOUT
25
mV
70
mV
RCB Hysteresis
ISD_OUT
VOUT Shutdown Current
VON=GND, VOUT=5.5V,
VIN=Short to GND
tDON*1
Turn-On Delay
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="L"→"H" to
VOUT=VIN x 10%
tR*1
VOUT Rise Time
tON*1
RLOW
V
1.7
1.2
V
1
µA
10
µA
0.5
2.5
ms
VIN=3.8V, RL=150Ω, CL=100μF
Time from VOUT=VIN x 10% to
VIN x 90%
1.5
5.0
ms
Turn-On Time
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="L"→"H" to
VOUT=VIN x 90%
2.0
7.5
ms
Nch. On Resistance for
Auto-Discharge
VIN=5.0V, VON=GND, VOUT=0.1V
20
Ω
All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except
RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis.
*1 Refer to the TIMING CHART for detailed information.
8
R5527K
NO. EA-312-201030
VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted.
The specifications surrounded by
are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC.
R5527K002B
Symbol
VIN
(Ta=25°C)
Item
Conditions
Min.
Max.
Unit
5.5
V
0.5
1
µA
Ta=25°C
0.5
1
µA
Ta=85°C
0.5
10
µA
µA
Input Voltage
Typ.
1.8
IQ(OFF)
Off Supply Current
VON=GND,VOUT=OPEN
ISD
Shutdown Current
VON=GND,
VOUT=GND
IQ
Quiescent Current
VON=VIN, IOUT=0mA
40
70
VIN=5V, IOUT=1A
48
65
VIN=4.5V, IOUT=1A
46
VIN=3.8V, IOUT=1A
45
VIN=3.3V, IOUT=500mA
45
VIN=2.5V, IOUT=500mA
51
VIN=1.8V, IOUT=250mA
68
RON
On Resistance
VIH
ON Input Logic High Voltage
VIN=1.8V to 5.5V
VIL
ON Input Logic Low Voltage
VIN=1.8V to 5.5V
ION
ON Input Leakage
VON=GND
RON_PD
Pull-Down Resistance at ON Pin
VIN=VON=1.8V to 5.5V
IREV(OFF)
Reverse Current at Off-State
tDON*1
Turn-On Delay
tR*1
VOUT Rise Time
tON*1
Turn-On Time
VON=GND, VOUT=5.5V,
VIN=1.8 V
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="L"→"H" to
VOUT=VIN x 10%
VIN=3.8V, RL=150Ω, CL=100μF
Time from VOUT=VIN x 10% to
VIN x 90%
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="L"→"H" to
VOUT=VIN x 90%
60
mΩ
V
1.7
1.2
V
1
µA
3
MΩ
10
µA
0.5
2.5
ms
1.5
5.0
ms
2.0
7.5
ms
All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except
RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis.
*1 Rise time from V
OUT=0V is defined. Refer to the TIMING CHART for detailed information.
9
R5527K
NO. EA-312-201030
VIN = 1.8 to 5.5V, IOUT = 1mA, CIN = 1µF, COUT = None, unless otherwise noted.
The specifications surrounded by
are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC.
R5527K002D
Symbol
(Ta=25°C)
Item
Conditions
VIN
Input Voltage
ISD
Shutdown Current
VON=GND,
VOUT=GND
IQ
Quiescent Current
RON
On Resistance
Min.
Typ.
1.8
Max.
Unit
5.5
V
Ta=25°C
0.5
1
µA
Ta=85°C
0.5
10
µA
VON=VIN, IOUT=0mA
40
70
µA
VIN=5V, IOUT=1A
48
65
VIN=4.5V, IOUT=1A
46
VIN=3.8V, IOUT=1A
45
VIN=3.3V, IOUT=500mA
45
VIN=2.5V, IOUT=500mA
51
VIN=1.8V, IOUT=250mA
68
60
mΩ
VIH
ON Input Logic High Voltage
VIN=1.8V to 5.5V
VIL
ON Input Logic Low Voltage
VIN=1.8V to 5.5V
ION
ON Input Leakage
VON=GND
Pull-Down Resistance at ON Pin
VIN=VON=1.8V to 5.5V
tDON*1
Turn-On Delay
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="L"→"H" to
VOUT=VIN x 10%
0.5
2.5
ms
tR*1
VOUT Rise Time
VIN=3.8V, RL=150Ω, CL=100μF
Time from VOUT=VIN x 10% to
VIN x 90%
1.5
5.0
ms
tON*1
Turn-On Time
VIN=3.8V, RL=150Ω, CL=100μF
Time from ON="L"→"H" to
VOUT=VIN x 90%
2.0
7.5
ms
RLOW
Nch. On Resistance for
Auto-Discharge
VIN=5.0V, VON=GND, VOUT=0.1V
RON_PD
V
1.7
1.2
V
1
µA
3
20
MΩ
Ω
All test items listed under ELECTRICAL CHARACTERISTICS are done under the pulse load condition (Tj≈Ta=25ºC) except
RCB Protection Trip Point, RCB Protection Release Trip Point, and RCB Hysteresis.
*1
Refer to the TIMING CHART for detailed information.
10
R5527K
NO. EA-312-201030
TYPICAL APPLICATION
Load Device
VBATT
VIN
VOUT
R5527K
CIN
COUT
CL
GND
RL
ON
Enable Signal
R5527K Typical Application
TIMING CHART
tON
tON
tDON
tDON
tR
tR
ON 50%
ON 50%
90%
90%
VOUT
VOUT
10%
VOUT Timing Chart (R5527K00xB/D)
10%
VOUT Timing Chart (R5527K001A/C)
11
R5527K
NO. EA-312-201030
TECHNICAL NOTES
Basically, the R5527K does not require a bypass capacitor between VIN pin and GND, however, considering
the spike noise, use 0.1µF or more capacitor (1µF [Ceramic] recommended) as a bypass capacitor. If spikes
may occur due to the inductance component of the VIN wiring on the board, connect a capacitor with a
sufficient capacitance value between VIN pin and GND.
There will be a delay time (Max. 1ms) before R5527K becomes disabled.
When a voltage is remained in the output pin at the restart, the startup time (the time until R5527K is
able to fully drive the output load from ON signal input) takes longer than the tON definition. Refer to
the following graph for the maximum value of the startup time. When returning from the reverse current
blocking (RCB) trip point, the following startup time is necessary based on the RCB protection release
Re-Start Turn-On Time (Max.)[ms]
trip point.
45
40
35
30
25
20
15
10
5
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VIN [V]
12
R5527K
NO. EA-312-201030
PACKAGE INFORMATION
Power Dissipation (DFN(PLP)1612-D
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The
following measurement conditions are based on JEDEC STD. 51.
Measurement Conditions
Item
Measurement Conditions
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions
76.2 mm × 114.3 mm × 1.6 mm
Copper Ratio
Outer Layer (First Layer): Less than 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square
Through-holes
φ 0.25 mm × 25 pcs
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Item
Measurement Result
Power Dissipation
1810 mW
Thermal Resistance (θja)
θja = 55°C/W
Thermal Characterization Parameter (ψjt)
ψjt = 27°C/W
θja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
2500
Power Dissipation (mW)
2000
1810
1500
1000
500
0
0
25
50
75 85 100
Ambient Temperature (°C)
125
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
13
R5527K
NO. EA-312-201030
Package Dimensions (DFN(PLP)1612-4D)
0.86±0.1
1.2
0.5
B
A
3
4
0.3±0.1
X4
1.6
0.5±0.1
0.05
※
C0.1
INDEX
0.05 S
S
1
0.25±0.1
0.6MAX.
0.05MIN.
2
Bottom View
0.05 M AB
(Unit : mm)
※) The tab on the bottom of the package enhances thermal
performance and is electrically connected to GND
(substrate level). It is recommended that the tab be
connected to the ground plane on the board, or otherwise
be left floating.
Mark Specification (DFN(PLP)1612-4D)
: Product Code … Refer to “R5527K Mark Specification Table”.
: Lot Number … Alphanumeric Serial Number
Mark Specification
R5527K Mark Specification Table (DFN(PLP)1612-4D)
Product Name
R5527K001B
R5527K001C
R5527K001D
R5527K001A
R5527K002B
R5527K002D
7A
7B
7C
7D
7E
7F
14
R5527K
NO. EA-312-201030
TYPICAL CHARACTERISTICS
Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed.
1) On Resistance vs. Input Voltage
2) On Resistance vs. Temperature
85
85
Ta=-40°C
Ta=25°C
Ta=85°C
VIN=1.8V
VIN=3.8V
VIN=5.5V
80
75
75
70
70
65
65
60
60
RON[mΩ]
RON[mΩ]
80
55
50
55
50
45
45
40
40
35
35
30
30
1.5
2
2.5
3
3.5
VIN [V]
4
4.5
5
-50
5.5
3) Off Supply Current vs. Input Voltage
0
25
Ta [°C]
50
75
100
4) Off Supply Current vs. Temperature
R5527K00xB/R5527K00xD
R5527K00xB/R5527K00xD
1
1
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
IQ(OFF)[μA]
IQ(OFF)[μA]
-25
0.5
0.4
0.3
0.5
0.4
0.3
0.2
0.2
Ta=-40°C
Ta=25°C
Ta=85°C
0.1
0
VIN=1.8V
VIN=3.8V
VIN=5.5V
0.1
0
1.5
2
2.5
3
3.5
VIN [V]
4
4.5
5
5.5
-50
-25
0
25
50
75
100
Ta [°C]
15
R5527K
NO. EA-312-201030
5) ON pin Pull-Down Current vs. Input Voltage
6) ON pin Pull-Down Current vs. Temperature
R5527K00xB/R5527K00xD
3
3
2.5
2.5
2
2
1.5
1.5
ION [μA]
ION [μA]
R5527K00xB/R5527K00xD
1
0.5
1
0.5
Ta=-40°C
Ta=25°C
Ta=85°C
0
1.5
2
2.5
3
3.5
4
4.5
5
VIN=1.8V
VIN=3.8V
VIN=5.5V
0
5.5
-50
-25
0
VIN [V]
7) ON pin Logic Threshold vs. Input Voltage
1.5
"H" Ta=-40°C
"H" Ta=25°C
"H" Ta=85°C
"L" Ta=-40°C
"L" Ta=25°C
"L" Ta=85°C
1.46
1.44
75
100
"H" VIN=1.8V
"H" VIN=3.8V
"H" VIN=5.5V
"L" VIN=1.8V
"L" VIN=3.8V
"L" VIN=5.5V
1.48
1.46
1.44
1.42
VON [V]
1.42
VON [V]
50
8) ON pin Logic Threshold vs. Input Voltage
1.5
1.48
25
Ta [°C]
1.4
1.38
1.4
1.38
1.36
1.36
1.34
1.34
1.32
1.32
1.3
1.3
1.5
2
2.5
3
3.5
VIN [V]
4
4.5
5
5.5
-50
-25
0
25
Ta [°C]
50
75
100
16
R5527K
NO. EA-312-201030
10) Quiescent Current vs. Temperature
70
70
60
60
50
50
40
40
IQ [μA]
IQ [μA]
9) Quiescent Current vs. Input Voltage
30
20
30
20
10
10
Ta=-40°C
Ta=25°C
Ta=85°C
0
VIN=1.8V
VIN=3.8V
VIN=5.5V
0
1.5
2
2.5
3
3.5
VIN [V]
4
4.5
5
5.5
-50
-25
0
25
Ta [°C]
50
12) Off Supply Current vs. Temperature
R5527K001A/R5527K001C
R5527K001A/R5527K001C
2
2
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
IQ(OFF)[μA]
IQ(OFF)[μA]
11) Off Supply Current vs. Input Voltage
1
0.8
0.8
0.6
0.4
0.4
Ta=-40°C
Ta=25°C
Ta=85°C
0
1.5
2.0
2.5
3.0
3.5
VIN [V]
4.0
4.5
5.0
5.5
100
1
0.6
0.2
75
VIN=1.8V
VIN=3.8V
VIN=5.5V
0.2
0
-50
-25
0
25
50
75
100
Ta [°C]
17
R5527K
NO. EA-312-201030
13) Inrush Current
R5527K00xB
0V
Ta=25°C RL=150Ω
ON(5V/div)
VOUT(1V/div)
VOUT(1V/div)
0V
CL=0μF
CL=10μF
CL=100μF
CL=330μF
CL=470μF
1ms/div
I(VIN)(100mA/div)
I(VIN)(100mA/div)
0A
18
1. The products and the product specifications described in this document are subject to change or discontinuation of
production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer
to our sales representatives for the latest information thereon.
2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written
consent of our company.
3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise
taking out of your country the products or the technical information described herein.
4. The technical information described in this document shows typical characteristics of and example application circuits
for the products. The release of such information is not to be construed as a warranty of or a grant of license under
our company's or any third party's intellectual property rights or any other rights.
5. The products listed in this document are intended and designed for use as general electronic components in standard
applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products,
amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and
reliability, for example, in a highly specific application where the failure or misoperation of the product could result in
human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and
transportation equipment, combustion equipment, safety devices, life support system etc.) should first contact us.
6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products
are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from
such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy
feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7. Anti-radiation design is not implemented in the products described in this document.
8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and
characteristics in the evaluation stage.
9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and
characteristics of the products under operation or storage.
10. There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case
of recognizing the marking characteristic with AOI, please contact our sales or our distributor before attempting to use
AOI.
11. Please contact our sales representatives should you have any questions or comments concerning the products or
the technical information.
Official website
https://www.nisshinbo-microdevices.co.jp/en/
Purchase information
https://www.nisshinbo-microdevices.co.jp/en/buy/
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