RP110K331D-TR

RP110x SERIES 150mA Low Supply Current LDO REGULATOR No. EA-239-190117 OUTLINE The RP110x Series is a voltage regulator (LDO) IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC contains the following components: a voltage reference unit, an error amplifier, a resistor-net for output voltage setting, a current limit circuit for preventing short-circuit, a soft-start circuit, and a chip enable circuit. By minimizing the supply current to 1µA, the IC is able to prolong the battery life of each system. The external capacitor is 0.1µF with phase compensation. The IC also has a constant slope circuit as a soft-start circuit, which does not require any external capacitor. It minimizes the inrush current and prevents the output voltage overshoot at the start-up. In addition to the small packaged SOT-23-5 and SC-88A, the RP110x Series offers the ultra-small DFN(PLP)0808-4 package and DFN1010-4, which enables the high density mounting of LDO regulator. FEATURES  Supply Current ...................................................... Typ. 1.0A (Except the current through CE pull down circuit)  Standby Current .................................................... Typ. 0.1A  Dropout Voltage .................................................... Typ. 0.28V (IOUT150mA, VOUT2.8V)  Output Voltage Accuracy....................................... 1.0%  Temperature-Drift Coefficient of Output Voltage ... Typ. 100ppm/C  Line Regulation ..................................................... Typ. 0.02%/V  Packages .............................................................. DFN(PLP)0808-4, DFN1010-4, SC-88A, SOT-23-5  Input Voltage Range ............................................. 1.4V to 5.25V  Output Voltage Range........................................... 0.8V to 3.6V (0.1V steps) (For other voltages, please refer to MARK INFORMATIONS.)  Built-in Fold Back Protection Circuit ..................... Typ. 50mA (Current at short mode)  Ceramic capacitors are recommended to be used with this IC ..... 0.1F or more  Built-in Constant Slope Circuit APPLICATIONS  Power source for portable communication equipment.  Power source for electrical appliances such as cameras, VCRs and camcorders.  Power source for battery-powered equipment. 1 RP110x No. EA-239-190117 BLOCK DIAGRAMS RP110xxxxB VDD RP110xxxxC VOUT VDD Vref VOUT Vref Current Limit Current Limit CE GND RP110xxxxD VDD VOUT Vref Current Limit CE 2 GND NC GND RP110x No. EA-239-190117 SELECTION GUIDE The output voltage, chip enable circuit, auto discharge function, package for the ICs can be selected at the user’s request. Product Name Package Quantity per Reel Pb Free Halogen Free RP110Kxx1-TR DFN(PLP)0808-4 10,000 pcs Yes Yes RP110Lxx1-TR DFN1010-4 10,000 pcs Yes Yes RP110Qxx2-TR-FE SC-88A 3,000 pcs Yes Yes RP110Nxx1-TR-FE SOT-23-5 3,000 pcs Yes Yes xx: Output voltage (VOUT) is selectable from 0.8V to 3.6V in 0.1V increments. The second decimal point is described as below. 1.25V: RP110x12x5 1.85V: RP110x18x5 2.85V: RP110x28x5 : Selections of CE pin and Auto-discharge function are as shown below. B: CE “H” active, Auto-discharge function: No C: CE is unavailable, Auto-discharge function: No D: CE “H” active, Auto-discharge function: Yes 3 RP110x No. EA-239-190117 PIN CONFIGURATIONS  DFN(PLP)0808-4 Top View 4  Bottom View 3 3 4  DFN1010-4 Top View 4 Bottom View 3 3  1 2 2  1  SC-88A 1 2 2  SOT-23-5 5 5 4 4 (mark side) (mark side) 1 2 1 3 2 3 PIN DESCRIPTIONS  DFN(PLP)0808-4 Pin No Symbol Pin Description 1 VOUT Output Pin 2 GND Ground Pin 3 CE / NC 4 VDD Chip Enable Pin ("H" Active) / No connection Input Pin  ) Tab is GND level. (They are connected to the reverse side of this IC.) The tab is better to be connected to the GND, but leaving it open is also acceptable.  DFN1010-4 Pin No. Symbol Description 1 VOUT Output Pin 2 GND Ground Pin 3 CE / NC 4 VDD Chip Enable Pin ("H" Active) / No connection Input Pin  ) Tab is GND level. (They are connected to the reverse side of this IC.) The tab is better to be connected to the GND, but leaving it open is also acceptable. 4 4 1 RP110x No. EA-239-190117  SC-88A Pin No. Symbol 1 CE / NC 2 Description Chip Enable Pin ("H" Active) / No connection NC No connection 3 GND Ground Pin 4 VOUT Output Pin 5 VDD Input Pin ) Pin No. 2 is connected to the bottom of the IC. It is recommended that the pin be connected to the ground plane on the board, or otherwise be left floating so that there is no contact with other potentials.  SOT-23-5 Pin No Symbol Pin Description 1 VDD 2 GND 3 CE / NC 4 NC No Connection 5 VOUT Output Pin Input Pin Ground Pin Chip Enable Pin ("H" Active) / No connection ABSOLUTE MAXIMUM RATINGS Symbol Item Rating Unit VIN Input Voltage 6.0 V VCE Input Voltage (CE Pin) 6.0 V VOUT Output Voltage 0.3 to VIN0.3 V IOUT Output Current 180 mA PD Topt Tstg Power Dissipation Operating Temperature Range Storage Temperature Range DFN(PLP)0808-4 Standard Land Pattern 286 DFN1010-4 JEDEC STD. 51 1000 SC-88A Standard Land Pattern 380 SOT-23-5 JEDEC STD. 51 660 mW 40 to 85 C 55 to 125 C ) For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. 5 RP110x No. EA-239-190117 ELECTRICAL CHARACTERISTICS Unless otherwise noted, VIN = Set VOUT + 1.0V (VOUT > 1.5), VIN = 2.5V (VOUT ≤ 1.5V), IOUT = 1mA, CIN = COUT = 0.1μF. The specifications surrounded by are guaranteed by Design Engineering at - 40C ≤ Ta ≤85C. RP110xxxxx Symbol Ta25C Item Conditions Ta = 25C VOUT Output Voltage -40C ≤ Ta ≤ 85C IOUT 0.99 VOUT ≤ 2.0V -20 VOUT > 2.0V 0.97 VOUT ≤ 2.0V -0 Typ.   Max. Unit 1.01 V 20 mV 1.025 V 50 mV mA 150 Load Regulation VDIF Dropout Voltage ISS Supply Current IOUT 0mA Istandby Standby Current VOUT /VIN Line Regulation VIN Input Voltage * ISC VOUT > 2.0V Output Current VOUT /IOUT VOUT /Ta Min. 1mA ≤ IOUT ≤ 150mA 20 mV 1 2.0 μA VCE = 0V 0.1 1.0 μA Set VOUT0.5V ≤ VIN ≤ 5.0V 0.02 0.10 %/V 5.25 V -20 0 Please refer to “Dropout Voltage”. 1.4 Output Voltage Temperature Coefficient -40C ≤ Ta ≤ 85C Short Current Limit VOUT 0V 100 ppm /C 50 mA CE Pull-down Current (Only applied to D/ B 0.3 μA versions) CE input Voltage “H” 1.0 VCEH V (Only for D/B versions) CE Input Voltage ”L” VCEL (Only applied to D/B V 0.4 versions) LOW Output Nch ON RLOW Resistance (Only applied VIN 4.0V, VCE = 0V 60 Ω to D version) All test categories were tested on the products under the pulse load condition (Tj ≈ Ta = 25ºC) except “Output Voltage Temperature Coefficient”. *) The maximum input voltage (electrical characteristics) is 5.25V. In case of exceeding this value, the maximum input voltage cannot be over 5.5V and the total operating time has to be within 500hrs. ICE 6 RP110x No. EA-239-190117 The specifications surrounded by  are guaranteed by Design Engineering at - 40C ≤ Ta ≤85C. Dropout Voltage Output Voltage VOUT (V) Ta25C Dropout Voltage VDIF (V) Condition Typ. Max. 0.8 ≤ VOUT < 0.9 0.96 1.40 0.9 ≤ VOUT < 1.0 0.87 1.25 1.0 ≤ VOUT < 1.2 0.78 1.15 1.2 ≤ VOUT < 1.4 0.64 1.00 0.52 0.80 1.7 ≤ VOUT < 2.0 0.40 0.60 2.0 ≤ VOUT < 2.5 0.32 0.48 2.5 ≤ VOUT < 3.0 0.28 0.40 3.0 ≤ VOUT ≤ 3.6 0.25 0.35 1.4 ≤ VOUT < 1.7 IOUT=150mA RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 7 RP110x No. EA-239-190117 TYPICAL APPLICATION VDD C1 RP110x Series CE CE Control VOUT VOUT C2 GND (External Components) C2 0.1F MURATA: GRM155B31C104KA87B TECHNICAL NOTES When using these ICs, consider the following points: Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a capacitor C2 with good frequency characteristics and ESR (Equivalent Series Resistance). (Note: If additional ceramic capacitors are connected with parallel to the output pin with an output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) PCB Layout Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result. Connect a capacitor C1 with a capacitance value as much as 0.1F or more between VDD and GND pin, and as close as possible to the pins. Set external components, especially the output capacitor C2, as close as possible to the ICs, and make wiring as short as possible. 8 RP110x No. EA-239-190117 CONSTANT SLOPE CIRCUITS The RP110x Series is equipped with a constant slope circuit as a soft-start circuit, which allows the output voltage to start up gradually when the CE is turned on. The constant slope circuit minimizes the inrush current at the start-up and also prevents the overshoot of the output voltage. The capacitor to create the start-up slope is built in the IC that does not require any external components. The start-up time and the start-up slope angle are fixed inside the IC. If the capacitance of the external output capacitor (COUT) becomes more than the certain capacitance, the output current limit circuit minimizes the incoming current of the output capacitor at the start-up. As a result, the start-up time becomes longer and the start-up slope angle becomes more gentle. As “Inrush Current Characteristics Example” below shows, if the COUT is less than 4.7µF, the constant slope circuit easily starts to function at the start-up, likewise, if the COUT is over 10µF, the output current limit circuit easily starts to function at the start-up. The boundary point of using these two circuits is inversely proportional to the output voltage. If the output voltage is higher, the output current limit circuit easily starts to function even if the COUT capacitance is small. For more details, please refer to the graph 14 of “Inrush Current Characteristics Example”. Inrush Current Characteristics Example (C1=none, IOUT=0mA, Topt=25ºC) VIN=3.5V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 CE Input Voltage Output Voltage COUT=0.1F COUT=1.0F COUT=2.2F COUT=4.7F COUT=10F Inrush Current 0 350 300 250 200 150 100 50 0 Inrush Current IVDD (mA) CE Input Voltage VCE / Output Voltage VOUT (V) RP110x25xB/D 50 100 150 200 250 300 350 400 Time t (s) 9 RP110x No. EA-239-190117 PACKAGE INFORMATION  Power Dissipation (DFN (PLP) 0808-4) Power Dissipation (PD) depends on conditions of mounting on board. This specification is based on the measurement at the condition below: Measurement Conditions: Standard Test Land Pattern Environment Mounting on Board (Wind velocity=0m/s) Board Material Glass cloth epoxy plastic (Double-sided) Board Dimensions 40mm  40mm  1.6mm Copper Ratio Top side: Approx. 50%, Back side: Approx. 50% Through-holes  0.5mm  24pcs Measurement Results: (Ta=25C) Standard Test Land Pattern 286mW (Tjmax=125C) 358mW (Tjmax=150C) ja = (125-25C)/0.286W= 350C/W Power Dissipation 400 jc= 90C/W 40 358 350 300 286 250 200 40 Power Dissipation PD (mW) Thermal Resistance 150 100 50 0 0 25 50 75 85 100 125 Ambient Temperature (°C) Power Dissipation 150 Measurement Board Pattern IC Mount Area (Unit: mm) The above graph shows the Power Dissipation of the package under the conditions of Tjmax=125C and Tjmax=150C. The operation of the IC within the shaded range in the graph might have an affect on the IC’s lifetime. The operation time of the IC must be remained within the time limit described in the table below. Operating Time 13,000 hours 10 Estimated Years (Operating four hours/day) 9 years RP110x No. EA-239-190117  Package Dimensions (DFN (PLP) 0808-4) 0.48 X4 3 0.80 0.05 4 0.25 0.05 45 * 0.220.05 B 0.280.05 A 0.80 C0.16 0.060.05 0.4max 0.05min INDEX 2 1 0.25 0.05 0.220.05 0.05 Bottom View M S AB (Unit : mm) *) Tab is GND level. (They are connected to the S  reverse side of this IC.) The tab is better to be connected to the GND, but leaving it open is also acceptable. 0.05 S Mark Specification (DFN (PLP) 0808-4) : Product Code … Refer to “RP110K Series Mark Specification Table”. : Lot Number … Alphanumeric Serial Number   11 RP110x No. EA-239-190117  12 RP110K Series Mark Specification Table (DFN(PLP)0808-4) RP110Kxx1B Product Name  VSET RP110Kxx1C Product Name  VSET RP110Kxx1D Product Name  VSET RP110K081B B 0.8V RP110K081C B 0.8V RP110K081D B 0.8V RP110K091B B 0.9V RP110K091C B 0.9V RP110K091D B 0.9V RP110K101B B 1.0V RP110K101C B 1.0V RP110K101D B 1.0V RP110K111B B 1.1V RP110K111C B 1.1V RP110K111D B 1.1V RP110K121B B 1.2V RP110K121C B 1.2V RP110K121D B 1.2V RP110K131B B 1.3V RP110K131C B 1.3V RP110K131D B 1.3V RP110K141B B 1.4V RP110K141C B 1.4V RP110K141D B 1.4V RP110K151B B 1.5V RP110K151C B 1.5V RP110K151D B 1.5V RP110K161B B 1.6V RP110K161C B 1.6V RP110K161D B 1.6V RP110K171B B 1.7V RP110K171C B 1.7V RP110K171D B 1.7V RP110K181B B 1.8V RP110K181C B 1.8V RP110K181D B 1.8V RP110K191B B 1.9V RP110K191C B 1.9V RP110K191D B 1.9V RP110K201B B 2.0V RP110K201C B 2.0V RP110K201D B 2.0V RP110K211B B 2.1V RP110K211C B 2.1V RP110K211D B 2.1V RP110K221B B 2.2V RP110K221C B 2.2V RP110K221D B 2.2V RP110K231B B 2.3V RP110K231C B 2.3V RP110K231D B 2.3V RP110K241B B 2.4V RP110K241C B 2.4V RP110K241D B 2.4V RP110K251B B 2.5V RP110K251C B 2.5V RP110K251D B 2.5V RP110K261B B 2.6V RP110K261C B 2.6V RP110K261D B 2.6V RP110K271B B 2.7V RP110K271C B 2.7V RP110K271D B 2.7V RP110K281B B 2.8V RP110K281C B 2.8V RP110K281D B 2.8V RP110K291B B 2.9V RP110K291C B 2.9V RP110K291D B 2.9V RP110K301B B 3.0V RP110K301C B 3.0V RP110K301D B 3.0V RP110K311B B 3.1V RP110K311C B 3.1V RP110K311D B 3.1V RP110K321B B 3.2V RP110K321C B 3.2V RP110K321D B 3.2V RP110K331B B 3.3V RP110K331C B 3.3V RP110K331D B 3.3V RP110K341B B 3.4V RP110K341C B 3.4V RP110K341D B 3.4V RP110K351B B 3.5V RP110K351C B 3.5V RP110K351D B 3.5V RP110K361B B 3.6V RP110K361C B 3.6V RP110K361D B 3.6V RP110K121B5 B 1.25V RP110K121C5 B 1.25V RP110K121D5 B 1.25V RP110K181B5 B 1.85V RP110K181C5 B 1.85V RP110K181D5 B 1.85V RP110K281B5 B 2.85V RP110K281C5 B 2.85V RP110K281D5 B 2.85V RP110x No. EA-239-190117  Power Dissipation (DFN1010-4) The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Copper Ratio  0.2 mm × 11 pcs Through-holes Measurement Result (Ta = 25°C, Tjmax = 125°C) Measurement Result Item Power Dissipation 1000 mW Thermal Resistance (ja) ja = 100°C/W Thermal Characterization Parameter (ψjt) ψjt = 41°C/W ja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 1200 Power Dissipation PD (mW) 1000 800 600 400 200 0 0 25 50 75 85 100 125 Ambient Temperature (°C) Power Dissipation vs. Ambient Temperature Measurement Board Pattern 13 RP110x No. EA-239-190117 A 1.00 0.250.05 Package Dimensions (DFN1010-4) B 0.65 3 X4 * 0.05 1.00 45 0.4max. 0.48 2 0.05 +0.08 0.1-0.03  4-C0.157 C0.12 INDEX S 4 1 0.48 0.05 0.220.05 0.05 M AB Bottom View 0.05 S *) Tab is GND level. (They are connected to the reverse side of this IC.) The tab is better to be connected to the GND, but leaving it open is also acceptable. Mark Specification (DFN1010-4) : Product Code …Refer to “RP110L Series Mark Specification Table” . : Lot Number … Alphanumeric Serial Number   14 (Unit : mm) RP110x No. EA-239-190117  RP110L Series Mark Specification Table (DFN1010-4) RP110Lxx1B Product Name  VSET RP110Lxx1C Product Name  VSET RP110Lxx1D Product Name RP110L081B 00 0.8V RP110L081C 32 0.8V RP110L091B 01 0.9V RP110L091C 33 RP110L101B 02 1.0V RP110L101C RP110L111B 03 1.1V RP110L121B 04 RP110L131B  VSET RP110L081D 64 0.8V 0.9V RP110L091D 65 0.9V 34 1.0V RP110L101D 66 1.0V RP110L111C 35 1.1V RP110L111D 67 1.1V 1.2V RP110L121C 36 1.2V RP110L121D 68 1.2V 06 1.3V RP110L131C 38 1.3V RP110L131D 70 1.3V RP110L141B 07 1.4V RP110L141C 39 1.4V RP110L141D 71 1.4V RP110L151B 08 1.5V RP110L151C 40 1.5V RP110L151D 72 1.5V RP110L161B 09 1.6V RP110L161C 41 1.6V RP110L161D 73 1.6V RP110L171B 10 1.7V RP110L171C 42 1.7V RP110L171D 74 1.7V RP110L181B 11 1.8V RP110L181C 43 1.8V RP110L181D 75 1.8V RP110L191B 13 1.9V RP110L191C 45 1.9V RP110L191D 77 1.9V RP110L201B 14 2.0V RP110L201C 46 2.0V RP110L201D 78 2.0V RP110L211B 15 2.1V RP110L211C 47 2.1V RP110L211D 79 2.1V RP110L221B 16 2.2V RP110L221C 48 2.2V RP110L221D 80 2.2V RP110L231B 17 2.3V RP110L231C 49 2.3V RP110L231D 81 2.3V RP110L241B 18 2.4V RP110L241C 50 2.4V RP110L241D 82 2.4V RP110L251B 19 2.5V RP110L251C 51 2.5V RP110L251D 83 2.5V RP110L261B 20 2.6V RP110L261C 52 2.6V RP110L261D 84 2.6V RP110L271B 21 2.7V RP110L271C 53 2.7V RP110L271D 85 2.7V RP110L281B 22 2.8V RP110L281C 54 2.8V RP110L281D 86 2.8V RP110L291B 24 2.9V RP110L291C 56 2.9V RP110L291D 88 2.9V RP110L301B 25 3.0V RP110L301C 57 3.0V RP110L301D 89 3.0V RP110L311B 26 3.1V RP110L311C 58 3.1V RP110L311D 90 3.1V RP110L321B 27 3.2V RP110L321C 59 3.2V RP110L321D 91 3.2V RP110L331B 28 3.3V RP110L331C 60 3.3V RP110L331D 92 3.3V RP110L341B 29 3.4V RP110L341C 61 3.4V RP110L341D 93 3.4V RP110L351B 30 3.5V RP110L351C 62 3.5V RP110L351D 94 3.5V RP110L361B 31 3.6V RP110L361C 63 3.6V RP110L361D 95 3.6V RP110L121B5 05 1.25V RP110L121C5 37 1.25V RP110L121D5 69 1.25V RP110L181B5 12 1.85V RP110L181C5 44 1.85V RP110L181D5 76 1.85V RP110L281B5 23 2.85V RP110L281C5 55 2.85V RP110L281D5 87 2.85V 15 RP110x No. EA-239-190117  Power Dissipation (SC-88A) Power Dissipation (PD) depends on conditions of mounting on board. This specification is based on the measurement at the condition below: Measurement Conditions: Standard Land Pattern Environment Mounting on Board (Wind velocity=0m/s) Board Material Glass cloth epoxy plastic (Double Layers) Board Dimensions 40mm  40mm  1.6mm Copper Ratio Top side: Approx. 50%, Back side: Approx. 50% Through-hole 0.5mm  44pcs (Ta=25C) Measurement Results: Standard Land Pattern Power Dissipation Thermal Resistance Free Air 380mW (Tjmax=125C) 475mW (Tjmax=150C) ja=(125-25C)/0.38W=263C/W ja=(125-25C)/0.15W=667C/W jc=75C/W - 150mW 40 475 500 On Board 400 Free Air 380 300 200 40 Power Dissipation PD (mW) 600 150 100 0 0 25 50 75 85 100 125 Ambient Temperature (°C) Power Dissipation 150 Measurement Board Pattern IC Mount Area (Unit: mm) The above graph shows the Power Dissipation of the package under the conditions of Tjmax=125C and Tjmax=150C. The operation of the IC within the shaded range in the graph might have an affect on the IC’s lifetime. The operation time of the IC must be remained within the time limit described in the table below. Operating Time 13,000 hours 16 Estimated Years (Operating four hours/day) 9 years RP110x No. EA-239-190117 Package Dimensions (SC-88A) 2.0±0.2 B 1.3±0.2 4 +0.2 1.25 -0.1 5 0.15 2.1±0.3 A 0.15±0.07 0.36±0.1  0～14 2 3 +0.1 0.65 +0.1 S  0.10 S AB 0～0.1 0.9 -0.2 0.2 -0.05 1.1Max. 1 0.10 S Unit : mm Mark Specification (SC-88A) : Product Code …Refer to “RP110Q Series Mark Specification Table”. : Lot Number … Alphanumeric Serial Number 5 4   1 2 3 17 RP110x No. EA-239-190117  RP110Q Series Mark Specification Table (SC-88A) RP110Qxx2B Product Name  18 RP110Qxx2C VSET Product Name  VSET RP110Qxx2D Product Name  VSET RP110Q082B AN08 0.8V RP110Q082C AP08 0.8V RP110Q082D AQ08 0.8V RP110Q092B AN09 0.9V RP110Q092C AP09 0.9V RP110Q092D AQ09 0.9V RP110Q102B AN10 1.0V RP110Q102C AP10 1.0V RP110Q102D AQ10 1.0V RP110Q112B AN11 1.1V RP110Q112C AP11 1.1V RP110Q112D AQ11 1.1V RP110Q122B AN12 1.2V RP110Q122C AP12 1.2V RP110Q122D AQ12 1.2V RP110Q132B AN13 1.3V RP110Q132C AP13 1.3V RP110Q132D AQ13 1.3V RP110Q142B AN14 1.4V RP110Q142C AP14 1.4V RP110Q142D AQ14 1.4V RP110Q152B AN15 1.5V RP110Q152C AP15 1.5V RP110Q152D AQ15 1.5V RP110Q162B AN16 1.6V RP110Q162C AP16 1.6V RP110Q162D AQ16 1.6V RP110Q172B AN17 1.7V RP110Q172C AP17 1.7V RP110Q172D AQ17 1.7V RP110Q182B AN18 1.8V RP110Q182C AP18 1.8V RP110Q182D AQ18 1.8V RP110Q192B AN19 1.9V RP110Q192C AP19 1.9V RP110Q192D AQ19 1.9V RP110Q202B AN20 2.0V RP110Q202C AP20 2.0V RP110Q202D AQ20 2.0V RP110Q212B AN21 2.1V RP110Q212C AP21 2.1V RP110Q212D AQ21 2.1V RP110Q222B AN22 2.2V RP110Q222C AP22 2.2V RP110Q222D AQ22 2.2V RP110Q232B AN23 2.3V RP110Q232C AP23 2.3V RP110Q232D AQ23 2.3V RP110Q242B AN24 2.4V RP110Q242C AP24 2.4V RP110Q242D AQ24 2.4V RP110Q252B AN25 2.5V RP110Q252C AP25 2.5V RP110Q252D AQ25 2.5V RP110Q262B AN26 2.6V RP110Q262C AP26 2.6V RP110Q262D AQ26 2.6V RP110Q272B AN27 2.7V RP110Q272C AP27 2.7V RP110Q272D AQ27 2.7V RP110Q282B AN28 2.8V RP110Q282C AP28 2.8V RP110Q282D AQ28 2.8V RP110Q292B AN29 2.9V RP110Q292C AP29 2.9V RP110Q292D AQ29 2.9V RP110Q302B AN30 3.0V RP110Q302C AP30 3.0V RP110Q302D AQ30 3.0V RP110Q312B AN31 3.1V RP110Q312C AP31 3.1V RP110Q312D AQ31 3.1V RP110Q322B AN32 3.2V RP110Q322C AP32 3.2V RP110Q322D AQ32 3.2V RP110Q332B AN33 3.3V RP110Q332C AP33 3.3V RP110Q332D AQ33 3.3V RP110Q342B AN34 3.4V RP110Q342C AP34 3.4V RP110Q342D AQ34 3.4V RP110Q352B AN35 3.5V RP110Q352C AP35 3.5V RP110Q352D AQ35 3.5V RP110Q362B AN36 3.6V RP110Q362C AP36 3.6V RP110Q362D AQ36 3.6V RP110Q122B5 AN37 1.25V RP110Q122C5 AP37 1.25V RP110Q122D5 AQ37 1.25V RP110Q182B5 AN38 1.85V RP110Q182C5 AP38 1.85V RP110Q182D5 AQ38 1.85V RP110Q282B5 AN39 2.85V RP110Q282C5 AP39 2.85V RP110Q282D5 AQ39 2.85V RP110x No. EA-239-190117  Power Dissipation (SOT-23-5) The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes  0.3 mm × 7 pcs Measurement Result Item (Ta = 25°C, Tjmax = 125°C) Measurement Result Power Dissipation 660 mW Thermal Resistance (ja) ja = 150°C/W Thermal Characterization Parameter (ψjt) ψjt = 51°C/W ja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter  Power Dissipation vs. Ambient Temperature Measurement Board Pattern 19 RP110x No. EA-239-190117 Package Dimensions (SOT-23-5) 2.9±0.2 1.1±0.1 1.9±0.2 0.8±0.1 (0.95) 4 +0.2 1.6-0.1 5 1 2 0～0.1 2.8±0.3 (0.95) 0.2min.  3 +0.1 0.15-0.05 0.4±0.1 Unit : mm  Mark Specification (SOT-23-5) : Product Code …Refer to “RP110N Series Mark Specification Table”. : Lot Number … Alphanumeric Serial Number 5 4  1 20 2 3 RP110x No. EA-239-190117  RP110N Series Mark Specification Table (SOT-23-5) RP110Nxx1B Product Name  VSET RP110Nxx1C Product Name  VSET RP110Nxx1D Product Name  VSET RP110N081B A08 0.8V RP110N081C B08 0.8V RP110N081D C08 0.8V RP110N091B A09 0.9V RP110N091C B09 0.9V RP110N091D C09 0.9V RP110N101B A10 1.0V RP110N101C B10 1.0V RP110N101D C10 1.0V RP110N111B A11 1.1V RP110N111C B11 1.1V RP110N111D C11 1.1V RP110N121B A12 1.2V RP110N121C B12 1.2V RP110N121D C12 1.2V RP110N131B A13 1.3V RP110N131C B13 1.3V RP110N131D C13 1.3V RP110N141B A14 1.4V RP110N141C B14 1.4V RP110N141D C14 1.4V RP110N151B A15 1.5V RP110N151C B15 1.5V RP110N151D C15 1.5V RP110N161B A16 1.6V RP110N161C B16 1.6V RP110N161D C16 1.6V RP110N171B A17 1.7V RP110N171C B17 1.7V RP110N171D C17 1.7V RP110N181B A18 1.8V RP110N181C B18 1.8V RP110N181D C18 1.8V RP110N191B A19 1.9V RP110N191C B19 1.9V RP110N191D C19 1.9V RP110N201B A20 2.0V RP110N201C B20 2.0V RP110N201D C20 2.0V RP110N211B A21 2.1V RP110N211C B21 2.1V RP110N211D C21 2.1V RP110N221B A22 2.2V RP110N221C B22 2.2V RP110N221D C22 2.2V RP110N231B A23 2.3V RP110N231C B23 2.3V RP110N231D C23 2.3V RP110N241B A24 2.4V RP110N241C B24 2.4V RP110N241D C24 2.4V RP110N251B A25 2.5V RP110N251C B25 2.5V RP110N251D C25 2.5V RP110N261B A26 2.6V RP110N261C B26 2.6V RP110N261D C26 2.6V RP110N271B A27 2.7V RP110N271C B27 2.7V RP110N271D C27 2.7V RP110N281B A28 2.8V RP110N281C B28 2.8V RP110N281D C28 2.8V RP110N291B A29 2.9V RP110N291C B29 2.9V RP110N291D C29 2.9V RP110N301B A30 3.0V RP110N301C B30 3.0V RP110N301D C30 3.0V RP110N311B A31 3.1V RP110N311C B31 3.1V RP110N311D C31 3.1V RP110N321B A32 3.2V RP110N321C B32 3.2V RP110N321D C32 3.2V RP110N331B A33 3.3V RP110N331C B33 3.3V RP110N331D C33 3.3V RP110N341B A34 3.4V RP110N341C B34 3.4V RP110N341D C34 3.4V RP110N351B A35 3.5V RP110N351C B35 3.5V RP110N351D C35 3.5V RP110N361B A36 3.6V RP110N361C B36 3.6V RP110N361D C36 3.6V RP110N121B5 A37 1.25V RP110N121C5 B37 1.25V RP110N121D5 C37 1.25V RP110N181B5 A38 1.85V RP110N181C5 B38 1.85V RP110N181D5 C38 1.85V RP110N281B5 A39 2.85V RP110N281C5 B39 2.85V RP110N281D5 C39 2.85V 21 RP110x No. EA-239-190117 TYPICAL CHARACTERISTICS 1) Output Voltage vs. Output Current (C1Ceramic 0.1F, C2Ceramic 0.1F, Topt25C) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 RP110x25xx 3.0 VIN=1.4V VIN=1.5V VIN=1.6V VIN=1.8V VIN=2.8V VIN=3.8V VIN=4.8V VIN=5.25V 0 100 200 300 Output Current IOUT (mA) Output Voltage VOUT (V) Output Voltage VOUT (V) RP110x08xx 2.5 VIN=2.8V VIN=2.9V VIN=3.5V VIN=4.5V VIN=5.25V 2.0 1.5 1.0 0.5 0 400 0 100 200 300 Output Current IOUT (mA) 400 RP110x36xx Output Voltage VOUT (V) 4.0 3.5 3.0 VIN=3.8V VIN=3.9V VIN=4.6V VIN=5.25V 2.5 2.0 1.5 1.0 0.5 0 0 100 200 300 Output Current IOUT (mA) 400 2) Output Voltage vs. Input Voltage (C1Ceramic 0.1F, C2Ceramic 0.1F, Topt25C) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 3.0 IOUT=1mA IOUT=30mA IOUT=50mA 2.5 2.0 1.5 1.0 IOUT=1mA IOUT=30mA IOUT=50mA 0.5 0 0 22 RP110x25xx Output Voltage VOUT (V) Output Voltage VOUT (V) RP110x08xx 1 2 3 4 Input Voltage VIN (V) 5 0 1 2 3 4 Input Voltage VIN (V) 5 RP110x No. EA-239-190117 RP110x36xx Output Voltage VOUT (V) 4.0 3.5 3.0 2.5 2.0 1.5 IOUT=1mA IOUT=30mA IOUT=50mA 1.0 0.5 0 0 1 2 3 4 Input Voltage VIN (V) 5 3) Supply Current vs. Input Voltage (C1Ceramic 0.1F, C2Ceramic 0.1F, Topt25C) RP110x25xx 1.4 1.4 1.2 1.2 Supply Current ISS (A) Supply Current ISS (A) RP110x08xx 1.0 0.8 0.6 0.4 0.2 0 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 Input Voltage VIN (V) 5 0 1 2 3 4 Input Voltage VIN (V) 5 RP110x36xx Supply Current ISS (A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 Input Voltage VIN (V) 5 23 RP110x No. EA-239-190117 4) Output Voltage vs. Temperature (C1Ceramic 0.1F, C2Ceramic 0.1F, IOUT1mA) RP110x08xx 0.86 0.84 0.82 0.80 0.78 0.76 0.74 -40 -25 0 25 50 Temperature Topt (C) VIN=3.5V 2.56 Output Voltage VOUT (V) Output Voltage VOUT (V) RP110x25xx VIN=1.8V 2.54 2.52 2.50 2.48 2.46 2.44 2.42 2.40 -40 -25 75 85 0 25 50 Temperature Topt (C) 75 85 Output Voltage VOUT (V) RP110x36xx 3.69 3.67 3.65 3.63 3.61 3.59 3.57 3.55 3.53 3.51 3.49 -40 -25 VIN=4.6V 0 25 50 Temperature Topt (C) 75 85 5) Supply Current vs. Temperature (C1Ceramic 0.1F, C2Ceramic 0.1F) RP110x08xx 2.0 1.5 1.0 0.5 0 -40 -25 24 VIN=1.8V 2.5 Supply Current ISS (A) Supply Current ISS (A) 2.5 RP110x25xx 0 25 50 Temperature Topt (C) 75 85 VIN=3.5V 2.0 1.5 1.0 0.5 0 -40 -25 0 25 50 Temperature Topt (C) 75 85 RP110x No. EA-239-190117 RP110x36xx VIN=4.6V Supply Current ISS (A) 2.5 2.0 1.5 1.0 0.5 0 -40 -25 0 25 50 Temperature Topt (C) 75 85 6) Dropout Voltage vs. Output Current (C1Ceramic 0.1F, C2Ceramic 0.1F, Topt25C) RP110x08xx RP110x25xx 350 Dropout Voltage VDIF (mV) Dropout Voltage VDIF (mV) 1200 1000 800 600 400 85C 25C -40C 200 0 300 250 200 150 85C 25C -40C 100 50 0 0 25 50 75 100 125 Output Current IOUT (mA) 150 0 25 50 75 100 125 Output Current IOUT (mA) 150 RP110x36xx Dropout Voltage VDIF (mV) 300 250 200 150 100 85C 25C -40C 50 0 0 25 50 75 100 125 Output Current IOUT (mA) 150 25 RP110x No. EA-239-190117 7) Dropout Voltage vs Set Output Voltage (C1Ceramic 0.1F, C2Ceramic 0.1F, Topt25C) Dropout Voltage VDIF (mV) 1000 900 800 700 600 500 400 300 200 100 0 0.8 IOUT=1mA IOUT=30mA IOUT=50mA IOUT=150mA 1.2 1.6 2.0 2.4 2.8 3.2 Set Output Voltage VREG (V) 3.6 8) Ripple Rejection vs. Input Bias Voltage (C1none, C2Ceramic 0.1F, Ripple0.2Vp-p,Topt25C) RP110x08xx IOUT=1mA 60 50 40 30 20 100Hz 1kHz 10kHz 100kHz 10 0 0.9 1.2 1.5 Input Voltage VIN (V) 50 40 30 20 0 2.6 1.8 IOUT=1mA 3.5 40 30 20 100Hz 1kHz 10kHz 100kHz 10 4.0 4.3 Input Voltage VIN (V) 4.6 IOUT=30mA 70 Ripple Rejection RR (dB) Ripple Rejection RR (dB) 26 2.9 3.2 Input Voltage VIN (V) RP110x08xx 50 0 3.7 100Hz 1kHz 10kHz 100kHz 10 RP110x36xx 60 IOUT=1mA 60 Ripple Rejection RR (dB) 70 Ripple Rejection RR (dB) RP110x25xx 60 50 100Hz 1kHz 10kHz 100kHz 40 30 20 10 0 0.9 1.2 1.5 Input Voltage VIN (V) 1.8 RP110x No. EA-239-190117 RP110x25xx 50 100Hz 1kHz 10kHz 100kHz 40 30 20 10 0 2.6 60 Ripple Rejection RR (dB) Ripple Rejection RR (dB) 60 RP110x36xx IOUT=30mA 2.9 3.2 Input Voltage VIN (V) 50 100Hz 1kHz 10kHz 100kHz 40 30 20 10 0 3.7 3.5 IOUT=30mA 4.0 4.3 Input Voltage VIN (V) 4.6 9) Ripple Rejection vs. Frequency (C1none, C2Ceramic 0.1F, Ripple0.2Vp-p, Topt25C) RP110x08xx 50 40 VIN=1.8V IOUT=1mA IOUT=30mA IOUT=150mA IOUT=150mA (VIN=2.5V) 30 20 10 0 0.1 1.0 10 100 Frequency f (kHz) 60 Ripple Rejection RR (dB) Ripple Rejection RR (dB) 60 RP110x25xx 1000 50 VIN=3.5V IOUT=1mA IOUT=30mA IOUT=150mA 40 30 20 10 0 0.1 1.0 10 100 Frequency f (kHz) 1000 RP110x36xx Ripple Rejection RR (dB) 60 50 VIN=4.6V IOUT=1mA IOUT=30mA IOUT=150mA 40 30 20 10 0 0.1 1.0 10 100 Frequency f (kHz) 1000 27 RP110x No. EA-239-190117 10) Input Transient Response (C1none, C20.1F, IOUT30mA, trtf5s, Topt25C) 5.5 2.8 4.5 1.8 0.9 0.8 0.7 Output Voltage 0.6 3.5 Input Voltage 2.8 2.7 2.6 2.5 Input Voltage VIN (V) 3.8 Output Voltage VOUT (V) 1.0 Input Voltage RP110x25xx Input Voltage VIN (V) Output Voltage VOUT (V) RP110x08xx Output Voltage 2.4 2.3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) RP110x33xx 5.2 Input Voltage 4.2 3.6 3.5 3.4 3.3 3.2 Input Voltage VIN (V) Output Voltage VOUT (V) 6.2 Output Voltage 3.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 11) Load Transient Response (C1none, trtf5s, Topt25C) 1.2 1.0 0.8 0.6 Output Voltage 0.4 0 150 100 3.1 Output Current 50mA 100mA 2.8 2.5 2.2 Output Voltage 1.9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 28 50 Output Voltage VOUT (V) 100 Output Current 50mA 100mA VIN=3.5V, C2=0.1F 150 Output Current VOUT (mA) Output Voltage VOUT (V) VIN=1.8V, C2=0.1F RP110x25xx 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 50 0 Output Current IOUT (mA) RP110x08xx RP110x No. EA-239-190117 RP110x08xx 0 3.9 3.6 Output Voltage 3.0 10 1.2 0.8 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) RP110x36xx 0 2.8 2.5 Output Voltage Output Voltage VOUT (V) 10 Output Current 1mA 10mA VIN=4.6V, C2=0.1F 20 Output Current IOUT (mA) Output Voltage VOUT (V) VIN=3.5V, C2=0.1F 1.9 20 10 4.0 Output Current 1mA 10mA 0 3.8 3.6 3.4 Output Voltage 3.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) RP110x08xx RP110x25xx 1.0 0.8 Output Voltage 0.4 50 0 Output Voltage VOUT (V) 100 Output Current 50mA 100mA VIN=3.5V, C2=1.0F 150 Output Current IOUT (mA) VIN=1.8V, C2=1.0F Output Voltage VOUT (V) Output Voltage 0.4 RP110x25xx 0.6 0 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 2.2 Output Current 1mA 10mA Output Current IOUT (mA) 3.3 20 150 100 Output Current 50mA 100mA 2.8 2.5 2.2 Output Voltage 50 0 Output Current IOUT (mA) 4.2 50 Output Voltage VOUT (V) 100 Output Current 50mA 100mA VIN=1.8V, C2=0.1F 150 Output Current IOUT (mA) Output Voltage VOUT (V) VIN=4.6V, C2=0.1F Output Current IOUT (mA) RP110x36xx 1.9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 29 RP110x No. EA-239-190117 RP110x08xx 50 0 3.9 3.6 3.3 Output Voltage Output Voltage VOUT (V) 100 Output Current 50mA 100mA VIN=1.8V, C2=1.0F 150 Output Current IOUT (mA) 3.0 10 0 Output Current 1mA 10mA 1.0 0.8 0.6 Output Voltage 0.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) RP110x25xx RP110x36xx 0 2.8 2.5 2.2 Output Voltage Output Voltage VOUT (V) 10 Output Current 1mA 10mA VIN=4.6V, C2=1.0F 20 Output Current IOUT (mA) VIN=3.5V, C2=1.0F Output Voltage VOUT (V) 20 1.9 20 10 0 Output Current 1mA 10mA 3.8 3.6 3.4 Output Voltage Output Current IOUT (mA) Output Voltage VOUT (V) VIN=4.6V, C2=1.0F Output Current IOUT (mA) RP110x36xx 3.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Time t (ms) 12) Turn On Speed (C1Ceramic 0.1F, C2Ceramic 0.1F, Topt25C) 1.0 0.8 0.6 0.4 0.2 0 Output Voltage 0 30 50 100 150 200 250 300 350 400 Time t (s) VIN=1.8V CE Input Voltage IOUT=0mA IOUT=30mA IOUT=150mA 1.0 0.8 0.6 0.4 0.2 0 2.0 1.5 1.0 0.5 0 Output Voltage 0 50 100 150 200 250 300 350 400 Time t (s) CE Input Voltage VCE (V) IOUT=0mA IOUT=30mA IOUT=150mA 2.0 1.5 1.0 0.5 0 Output Voltage VOUT (V) Input Voltage RP110x08xB/D Input Voltage VIN (V) Output Voltage VOUT (V) RP110x08xC RP110x No. EA-239-190117 IOUT=0mA IOUT=30mA IOUT=150mA Output Voltage 0 CE Input Voltage IOUT=0mA IOUT=30mA IOUT=150mA 3.0 2.5 2.0 1.5 1.0 0.5 0 50 100 150 200 250 300 350 400 Time t (s) Output Voltage 0 IOUT=0mA IOUT=30mA IOUT=150mA 5 4 3 2 1 0 Output Voltage VIN=4.6V Output Voltage VOUT (V) Input Voltage 0 50 100 150 200 250 300 350 400 Time t (s) RP110x36xB/D Input Voltage VIN (V) Output Voltage VOUT (V) RP110x36xC 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 5 4 3 2 1 0 CE Input Voltage 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 50 100 150 200 250 300 350 400 Time t (s) 5 4 3 2 1 0 IOUT=0mA IOUT=30mA IOUT=150mA Output Voltage 0 CE Input Voltage VCE (V) 3.0 2.5 2.0 1.5 1.0 0.5 0 VIN=3.5V Output Voltage VOUT (V) Input Voltage 5 4 3 2 1 0 CE Input Voltage VCE (V) RP110x25xB/D Input Voltage VIN (V) Output Voltage VOUT (V) RP110x25xC 50 100 150 200 250 300 350 400 Time t (s) 13) Turn Off Speed with CE pin (C1Ceramic 0.1F, C2Ceramic 0.1F, Topt25C) RP110x08xB 0.8 0.6 0.4 0.2 0 -0.2 IOUT=30mA IOUT=150mA Output Voltage 0 10 20 30 40 50 60 70 80 Time t (s) VIN=1.8V Output Voltage VOUT (V) CE Input Voltage 2.0 1.5 1.0 0.5 0 CE Input Voltage VCE (V) Output Voltage VOUT (V) VIN=1.8V CE Input Voltage IOUT=0mA 0.8 0.6 0.4 0.2 0 Output Voltage 0 2.0 1.5 1.0 0.5 0 CE Input Voltage VCE (V) RP110x08xB 10 20 30 40 50 60 70 80 Time t (ms) 31 RP110x No. EA-239-190117 RP110x25xB IOUT=0mA IOUT=30mA IOUT=150mA 0.8 0.6 0.4 0.2 0 -0.2 Output Voltage VIN=3.5V Output Voltage VOUT (V) CE Input Voltage 2.0 1.5 1.0 0.5 0 CE Input Voltage VCE (V) Output Voltage VOUT (V) VIN=1.8V 0 IOUT=30mA IOUT=150mA 3 2 1 Output Voltage 10 20 30 40 50 60 70 80 Time t (s) 0 RP110x25xD 0 3 IOUT=0mA 1 Output Voltage Output Voltage VOUT (V) 2 CE Input Voltage VIN=3.5V 4 CE Input Voltage VCE (V) 0 4 2 CE Input Voltage 0 3 IOUT=0mA IOUT=30mA IOUT=150mA 2 1 Output Voltage 0 0 0 10 20 30 40 50 60 70 80 90 100 110 120 Time t (ms) RP110x36xB RP110x36xB 2 0 IOUT=30mA IOUT=150mA 3 2 Output Voltage 1 0 Output Voltage VOUT (V) 4 CE Input Voltage VIN=4.6V 6 CE Input Voltage VCE (V) VIN=4.6V 4 10 20 30 40 50 60 70 80 Time t (s) 4 CE Input Voltage 2 0 4 IOUT=0mA 3 2 Output Voltage 1 0 0 10 20 30 40 50 60 70 80 Time t (s) 6 0 10 20 30 40 50 60 70 80 90 100 110 120 Time t (ms) CE Input Voltage VCE (V) Output Voltage VOUT (V) VIN=3.5V 2 10 20 30 40 50 60 70 80 Time t (s) CE Input Voltage VCE (V) RP110x25xB Output Voltage VOUT (V) 2 CE Input Voltage 0 0 32 4 CE Input Voltage VCE (V) RP110x08xD RP110x No. EA-239-190117 RP110x36xD 6 4 CE Input Voltage 2 0 IOUT=0mA IOUT=30mA IOUT=150mA 4 3 2 Output Voltage 1 CE Input Voltage VCE (V) Output Voltage VOUT (V) VIN=4.6V 0 0 10 20 30 40 50 60 70 80 Time t (s) 14) Inrush Current (C1none, IOUT0mA, Topt25C) Output Voltage Inrush Current 0 COUT=0.1F COUT=1.0F COUT=2.2F COUT=4.7F COUT=10F COUT=22F 350 300 250 200 150 100 50 0 50 100 150 200 250 300 350 400 Time t (s) VIN=1.8V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 CE Input Voltage Output Voltage Inrush Current 0 COUT=0.1F COUT=1.0F COUT=2.2F COUT=4.7F COUT=10F COUT=22F 350 300 250 200 150 100 50 0 Inrush Current IVDD (mA) Input Voltage (tr=0.5s) CE Input Voltage VCE / Output Voltage VOUT (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 RP110x08xB/D Inrush Current IVDD (mA) Input Voltage VIN / Output Voltage VOUT (V) RP110x08xC 50 100 150 200 250 300 350 400 Time t (s) 33 RP110x No. EA-239-190117 Output Voltage COUT=0.1F COUT=1.0F COUT=2.2F COUT=4.7F COUT=10F Inrush Current CE Input Voltage Output Voltage COUT=0.1F COUT=1.0F COUT=2.2F COUT=4.7F COUT=10F Inrush Current 50 100 150 200 250 300 350 400 Time t (s) 0 Input Voltage (tr=0.5s) Output Voltage COUT=0.1F COUT=1.0F COUT=2.2F COUT=4.7F COUT=10F Inrush Current 0 34 350 300 250 200 150 100 50 0 50 100 150 200 250 300 350 400 Time t (s) CE Input Voltage VCE / Output Voltage VOUT (V) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 50 100 150 200 250 300 350 400 Time t (s) RP110x36xB/D Inrush Current IVDD (mA) Input Voltage VIN / Output Voltage VOUT (V) RP110x36xC 350 300 250 200 150 100 50 0 VIN=4.6V 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 CE Input Voltage Output Voltage COUT=0.1F COUT=1.0F COUT=2.2F COUT=4.7F COUT=10F Inrush Current 0 350 300 250 200 150 100 50 0 50 100 150 200 250 300 350 400 Time t (s) Inrush Current IVDD (mA) 0 350 300 250 200 150 100 50 0 VIN=3.5V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Inrush Current IVDD (mA) Input Voltage (tr=0.5s) CE Input Voltage VCE / Output Voltage VOUT (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 RP110x25xB/D Inrush Current IVDD (mA) Input Voltage VIN / Output Voltage VOUT (V) RP110x25xC RP110x No. EA-239-190117 ESR vs. Output Current When using these ICs, consider the following points: The relations between IOUT (Output Current) and ESR of an output capacitor are shown below. The conditions when the white noise level is under 40V (Avg.) are marked as the hatched area in the graph. Measurement conditions Frequency Band : 10Hz to 2MHz Temperature : 40C to 85C Hatched Area : Noise level is under 40V(Avg.) CIN,COUT : 0.1F RP110x08xx 1000 VIN=2.5V to 5.25V 1000 100 100 10 10 ESR () ESR () RP110x25xx VIN=1.4V to 5.25V 1 0.1 1 0.1 15m 0.01 0 25 50 75 100 125 Output Current IOUT (mA) 150 15m 0.01 0 25 50 75 100 125 Output Current IOUT (mA) 150 RP110x36xx VIN=3.6V to 5.25V 1000 ESR () 100 10 1 0.1 15m 0.01 0 25 50 75 100 125 Output Current IOUT (mA) 150 35 1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to Ricoh sales representatives for the latest information thereon. 2. 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