RP111H111D-T1-FE

RP111x Series Good Transient Response Low Voltage 500mA LDO NO.EA-241-190523 OUTLINE The RP111x Series are CMOS-based LDO regulators featuring 500mA output current. The input voltage is as low as 1.4V and the output voltage can be set from 0.7V. Due to a built-in 0.46Ω (at VOUT=2.8V) on-resistor, RP111x can provide a low dropout voltage. RP111x also features an excellent line transient response, ripple rejection at 75dB, and low noise. The output voltage accuracy is as high as ±0.8% and the temperature drift coefficient of output voltage is low at ±30ppm/°C. The accuracy of the output voltage of RP111x includes the temperature characteristics and the load transient response has been improved. The typ. and max value of under/overshoot for various output current are shown in the typical characteristics in the datasheet, therefore the accuracy of the output voltage estimation will be easy on the actual operating cases. In addition to a fold-back protection circuit built into conventional regulators, RP111x contains a thermal shutdown circuit and an inrush current limit circuit. SOT-23-5 and SOT-89-5 packages, a 1.2mm square DFN1212-6 package are available. FEATURES • • • • • • • • • • • • • • Supply Current ...................................................... Typ. 80µA Standby Current .................................................... Typ. 0.1µA Dropout Voltage .................................................... Typ. 0.23V (IOUT=500mA, VOUT=2.5V) Ripple Rejection .................................................... Typ. 75dB (f=1kHz) Typ. 70dB (f=10kHz) Output Voltage Accuracy....................................... ±0.8% (VOUT ≥1.8V) Output Voltage Temperature Coefficient ............... Typ. ±30ppm/°C (VOUT ≥1.8V) Line Regulation ..................................................... Typ. 0.02%/V Packages .............................................................. DFN1212-6, SOT-23-5, SOT-89-5, Input Voltage Range ............................................. 1.4V to 5.25V Output Voltage Range ........................................... 0.7V to 3.6V (0.1V steps) (For other voltages, please refer to MARK INFORMATIONS.) Built-in Foldback Protection Circuit ....................... Typ. 50mA (Current at short mode) Thermal Shutdown Temperature........................... 165°C Inrush Current Limit .............................................. Typ.400mA (for 180µs after start-up) Ceramic capacitors are recommended to be used with this IC ..... 1.0µF or more APPLICATIONS • • • • Power source for portable communication equipment. Power source for electrical appliances such as cameras, VCRs and camcorders. Power source for battery-powered equipments. Power source for electrical home appliances. 1 RP111x NO.EA-241-190523 BLOCK DIAGRAMS RP111xxx1B RP111xxx1D VDD VOUT VDD VOUT VFB VFB Vref Vref Current Limit Current Limit Thermal Shutdown Thermal Shutdown CE GND CE GND SELECTION GUIDE The output voltage, auto discharge function, package for the ICs can be selected at the user’s request. Product Name Package Quantity per Reel Pb Free Halogen Free DFN1212-6 5,000 pcs Yes Yes RP111Nxx1∗-TR-FE SOT-23-5 3,000 pcs Yes Yes RP111Hxx1∗-T1-FE SOT-89-5 1,000 pcs Yes Yes RP111Lxx1∗-TR xx x: The output voltage can be designated in the range of 0.7V（07）to 3.6V（36）in 0.1V steps. (For other voltages, please refer to MARK INFORMATIONS.) ∗ 2 : Auto discharge function at off state are options as follows. (B) without auto discharge function at off state (D) with auto discharge function at off state RP111x NO.EA-241-190523 PIN CONFIGURATIONS DFN1212-6 Top View 6 5 SOT-23-5 Bottom View 4 4 5 2 3 3 4 5 4 (mark side) ∗ 1 5 6 SOT-89-5 2 1 1 2 3 1 2 3 PIN DESCRIPTIONS • DFN1212-6 Pin No. Symbol Description 1 VOUT Output Pin 2 VFB Feed Back Pin 3 GND 4 CE Chip Enable Pin ("H" Active) 5 NC No connection 6 VDD Input Pin Ground Pin ∗) Tab is GND level. (They are connected to the reverse side of this IC.) The tab is better to be connected to the GND, but leaving it open is also acceptable. • • SOT-23-5 Pin No Symbol Pin Description 1 VDD 2 GND 3 CE Chip Enable Pin ("H" Active) 4 VFB Feed Back Pin 5 VOUT Output Pin Input Pin Ground Pin SOT-89-5 Pin No Symbol Pin Description 1 VFB 2 GND 3 CE Chip Enable Pin ("H" Active) 4 VDD Input Pin 5 VOUT Output Pin Feed Back Pin Ground Pin Under normal conditions, please connect the VOUT pin to the VFB pin. However, in the case of adjusting the output voltage with the VFB pin, please follow the " ADJUSTABLE OUTPUT VOLTAGE SETTING". 3 RP111x NO.EA-241-190523 ABSOLUTE MAXIMUM RATINGS Symbol Item Rating Unit 6.0 V -0.3～6.0 V VIN Input Voltage VCE Input Voltage (CE Pin) VOUT Output Voltage −0.3 to VIN+0.3 V IOUT Output Current 510 mA Power Dissipation (DFN1212-6)∗ 600 Power Dissipation (SOT-23-5) ∗ 420 Power Dissipation (SOT-89-5)∗ 900 Ta Operating Temperature Range −40 to 85 °C Tstg Storage Temperature Range −55 to 125 °C PD mW ∗) For Power Dissipation, please refer to PACKAGE INFORMATION. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. 4 RP111x NO.EA-241-190523 ELECTRICAL CHARACTERISTICS • Unless otherwise noted, VIN=Set VOUT +1.0V(VOUT >1.5), VIN=2.5V(VOUT ≤ 1.5V), IOUT=1mA, CIN=COUT=1.0μF. The specifications surrounded by are guaranteed by Design Engineering at −40°C ≤ Ta ≤ 85°C. RP111xxx1B/D Symbol Ta=25°C Item Conditions Ta=25°C VOUT Output Voltage -40°C ≤ Ta ≤ 85°C IOUT VTRLD Load Transient Response Typ. Max. Unit VOUT ≥ 1.8V ×0.992 ×1.008 V VOUT < 1.8V −18 +18 mV VOUT ≥ 1.8V ×0.985 ×1.015 V VOUT < 1.8V −55 50 mV Output Current ∆VOUT/∆IOUT Load Regulation Min. 500 1mA ≤ IOUT ≤ 500mA IOUT :1mA⇔250ｍA (tr=tf=0.5µs) IOUT 1mA⇔250ｍA (tr=tf=5.0µs) mA 1 COUT=1µF −75 +45 COUT=2.2µF −55 +35 COUT=1µF −20 +15 20 mV mV VDIF Dropout Voltage Please refer to “Dropout Voltage”. ISS Supply Current IOUT=0mA 80 125 µA Istandby Standby Current VCE=0V 0.1 1.0 µA ∆VOUT/∆VIN Line Regulation Set VOUT+0.5V ≤ VIN ≤ 5.25V, VIN ≥ 1.4V 0.02 0.10 %/V VTRLN Input Transient Response VIN : Set VOUT+0.5V⇔ Set VOUT+1.5V(tr=tf=5.0µs), VIN ≥ 1.4V,IOUT=30mA −1.5 +1.5 mV RR Ripple Rejection f=1kHz,Ripple0.2Vp-p, VIN=Set VOUT+1.0V,IOUT=30mA (VOUT ≤ 2.0V, VIN=3.0V) 75 dB VIN Input Voltage∗ 1.4 Output Voltage Temperature Coefficient 40°C ≤ Ta ≤ 85°C ISC Short Current Limit VOUT=0V IPD CE Pull-down Current VCEH CE Input Voltage "H" VCEL CE Input Voltage "L" ∆VOUT/∆Ta TTSD TTSR en Thermal Shutdown Temperature Thermal Shutdown Released Temperature Output Noise 5.25 V VOUT ≥ 1.8V ±30 VOUT < 1.8V ±100 ppm /°C 50 mA 0.3 0.6 1.0 µA V 0.4 Junction Temperature 165 Junction Temperature 100 V °C VOUT ≥ 1.8V 20× VOUT VOUT < 1.8V 40× VOUT BW=10Hz~100kHz µVrms 5 RP111x NO.EA-241-190523 ELECTRICAL CHARACTERISTICS • Unless otherwise noted, VIN=Set VOUT +1.0V(VOUT >1.5), VIN=2.5V(VOUT ≤ 1.5V), IOUT=1mA, CIN=COUT=1.0μF. The specifications surrounded by are guaranteed by Design Engineering at −40°C ≤ Ta ≤ 85°C. RP111xxx1B/D Symbol RLOW Ta=25°C Item Low Output Nch Tr. ON Resistance (of D version) Conditions Min. VIN=4.0V, VCE=0V Typ. Max. Unit Ω 60 All of units are tested and specified under load conditions such that Tj≈Ta=25°C except for Output Voltage Temperature Coefficient, Load Transient Response, Input Transient Response, Output Noise and Ripple Rejection. ∗) When Input Voltage is 5.5V, the total operational time must be within 500hrs. • Dropout Voltage Output Voltage VOUT (V) Ta=25°C Dropout Voltage VDIF (V) Typ. Max. 0.7 ≤ VOUT < 0.8 0.58 0.88 0.8 ≤ VOUT < 0.9 0.52 0.80 0.9 ≤ VOUT < 1.0 0.45 0.70 1.0 ≤ VOUT < 1.2 0.42 0.64 0.35 0.53 0.31 0.48 1.8 ≤ VOUT < 2.1 0.27 0.41 2.1 ≤ VOUT < 2.5 0.25 0.38 2.5 ≤ VOUT < 3.0 0.23 0.34 3.0 ≤ VOUT ≤ 3.6 0.22 0.32 1.2 ≤ VOUT < 1.4 1.4 ≤ VOUT < 1.8 Condition IOUT=500mA RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS) All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 6 RP111x NO.EA-241-190523 TYPICAL APPLICATIONS VDD VOUT VOUT RP111x series C1 VFB CE C2 GND External Parts Example: C1, C2: Ceramic Capacitor 1.0µF, Murata, GRM155B31A105KE15 Under normal conditions, please connect the VOUT pin to the VFB pin. However, in the case of adjusting the output voltage with the VFB pin, please follow the " ADJUSTABLE OUTPUT VOLTAGE SETTING". TECHNICAL NOTES Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a 1.0µF or more capacitor C2. In case of using a tantalum capacitor, the output may be unstable due to inappropriate ESR. Therefore, the full range of operating conditions for the capacitor in the application should be considered. PCB Layout Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result. Connect a capacitor C1 with a capacitance value as much as 1.0µF or more between VDD and GND pin, and as close as possible to the pins. Set external components, especially the output capacitor C2, as close as possible to the ICs, and make wiring as short as possible. 7 RP111x NO.EA-241-190523 ADJUSTABLE OUTPUT VOLTAGE SETTING Output Voltage Setting RP111x is capable of adjusting the output voltage by using the external divider resistors. If the V voltage fixed in the device is described as setV , the output voltage can be set by using the following formulas. FB FB I1 = IIC + I2 ...................................................................................................................... (1) I2 = setVFB / R2 .............................................................................................................. (2) Thus, I1 = IIC + setVFB / R2 ....................................................................................................... (3) Therefore, VOUT = setVFB + R1 x I1................................................................................................... (4) Put formula (3) into formula (4), then VOUT = setVFB + R1 x (IIC + setVFB / R2) = setVFB x (1 + R1/R2) + R1 x IIC ........................................................................... (5) In formula (5), R1x I is the error-causing factor in V . As for I , IIC = setVFB / RIC .............................................................................................................. (6) Therefore, the error-causing factor R1x I can be described as follows. R1 x IIC = R1 x setVFB / RIC = setVFB x R1 / RIC ............................................................................................. (7) For better accuracy, choosing R1 (