RP112N381D-TR-FE

RP112x Series Low Noise 150 mA LDO Regulator No. EA-258-180621 OUTLINE The RP112x is a voltage regulator (LDO) with high output voltage accuracy, low-supply current, low Onresistance transistor, low noise output voltage and high ripple rejection. Each IC is composed of the followings: a voltage reference unit, an error amplifier, a resistor-net for output voltage setting, a current limit circuit, and a chip enable circuit. The RP112x features ultra-low noise and its Ripple Rejection is as low as 80 dB at f = 1 kHz, 75 dB at f = 10 kHz and 65 dB at f = 100 kHz. The Output Noise is also as low as Typ. 10 μVrms. It is kept the low level at any Output Voltage. RP112x is suitable for the power source for the portable music player and RF module that demands for higher level of noise reduction. SOT-23-5 and SC-88A packages, a 1-mm square DFN(PLP)10104 package are available. FEATURES               Supply Current ...................................................... Typ. 75 A Standby Current .................................................... Typ. 0.1 A Dropout Voltage .................................................... Typ. 0.20 V (IOUT = 150 mA, VOUT = 2.8 V) Ripple Rejection .................................................... Typ. 80 dB (f = 1 kHz) Typ. 75 dB (f = 10 kHz) Typ. 65 dB (f = 100 kHz) Output Voltage Accuracy....................................... ±1.0% Output Voltage Temperature Coefficient ............... Typ. ±30 ppm/C Line Regulation ..................................................... Typ. 0.02%/V Packages .............................................................. DFN(PLP)1010-4, SC-88A, SOT-23-5 Input Voltage Range ............................................. 2.0 V to 5.25 V Output Voltage Range........................................... 1.2 V to 4.8 V (0.1 V step) Short Current Limit ................................................ Typ. 40 mA Built-in Foldback Protection Circuit Output Noise ......................................................... Typ. 10 μVrms Ceramic capacitors are recommended to be used with this IC ..... 1.0 F or more APPLICATIONS       Power source for portable communication equipment. Power source for electrical appliances such as cameras, VCRs and camcorders. Power source for battery-powered equipments. Power source for electrical home appliances. Power source for the portable music player Power source for RF module 1 RP112x No. EA-258-180621 SELECTION GUIDE The output voltage, auto-discharge function(1), package for the ICs can be selected at the user’s request. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free DFN(PLP)1010-4 10,000 pcs Yes Yes RP112Qxx2-TR-FE SC-88A 3,000 pcs Yes Yes RP112Nxx1-TR-FE SOT-23-5 3,000 pcs Yes Yes RP112Kxx1-TR xx: Set output voltage (VSET) is selectable from 1.2 V to 4.8 V in 0.1 V step. The second decimal point of the voltage is described as below. 1.25 V: RP112x12x5 1.85 V: RP112x18x5 2.85 V: RP112x28x5 : Selections of CE pin polarity and Auto-discharge function are as shown below: (B) CE pin polarity: “H” active, Auto-discharge function: No (D) CE pin polarity: “H” active, Auto-discharge function: Yes BLOCK DIAGRAMS VDD VOUT VDD VOUT Noise Reduction Noise Reduction Vref Vref Current Limit CE GND RP112xxxxB Block Diagram (1) Current Limit CE GND RP112xxxxD Block Diagram Auto-discharge function quickly lowers the output voltage to 0 V by releasing the electrical charge in the external capacitor when the chip enable signal is switched from the active mode to the standby mode. 2 RP112x No. EA-258-180621 PIN DESCRIPTIONS Top View 4 3 Bottom View 3 5 4 5 4 4 (1) (mark side) 1 2 2 1 DFN(PLP)1010-4 Pin Configuration 1 1 2 (mark side) 3 1 SC-88A Pin Configuration DFN(PLP)1010-4 Pin Description Pin No. Symbol 2 3 SOT-23-5 Pin Configuration Description 1 VOUT Output Pin 2 GND Ground Pin 3 CE Chip Enable Pin ("H" Active) 4 VDD Input Pin  SC-88A Pin Description Pin No Symbol Pin Description 1 VDD Input Pin 2 GND 3 CE Chip Enable Pin ("H" Active) 4 NC No Connection 5 VOUT Output Pin Ground Pin SOT-23-5 Pin Description Pin No Symbol Pin Description 1 VDD Input Pin 2 GND 3 CE Chip Enable Pin ("H" Active) 4 NC No Connection 5 VOUT Output Pin Ground Pin (1) Tab is GND level (They are connected to the reverse side of this IC). The tab is better to be connected to the GND, but leaving it open is also acceptable. 3 RP112x No. EA-258-180621 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings Symbol Item Rating Unit VIN Input Voltage 6.0 V VCE Input Voltage (CE Pin) 6.0 V VOUT Output Voltage −0.3 to VIN + 0.3 V IOUT Output Current 180 mA (DFN(PLP)1010-4) PD Power Dissipation(1) SC-88A SOT-23-5 JEDEC STD. 51-7 Test Land Pattern Standard Test Land Pattern JEDEC STD. 51-7 Test Land Pattern 800 380 mW 660 Tj Junction Temperature Range −40 to 125 C Tstg Storage Temperature Range −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Item Rating Unit VIN Input Voltage 2.0 to 5.25 V Ta Operating Temperature −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) 4 Refer to POWEWR DISSIPATION for detailed information. RP112x No. EA-258-180621 ELECTRICAL CHARACTERISTICS Unless otherwise noted, VIN = 5.25 V (VOUT ≥ 4.1 V), VIN = Set VOUT + 1.0 V (1.5 V < VOUT < 4.1 V), VIN = 2.5 V (VOUT ≤ 1.5 V), IOUT = 1 mA, CIN = COUT = 1.0 F The specifications surrounded by are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C. RP112xxxxB/D Electrical Characteristics Symbol Item (Ta = 25°C) Conditions Ta = 25C VOUT Output Voltage −40C ≤ Ta ≤ 85C IOUT ISS Supply Current IOUT = 0 mA Standby Current VCE = 0 V VIN x1.01 V VOUT < 2.0 V 20 +20 mV VOUT ≥ 2.0 V x0.985 x1.015 V VOUT < 2.0 V −30 +30 mV Ripple Rejection −14 80 VOUT < 4.1 V 75 IPD CE Pull-down Current VCEH CE Input Voltage "H" VCEL CE Input Voltage "L" 14 mV 100 A 0.1 1.0 A 0.02 0.10 %/V VOUT < 1.7 V Ripple 0.2 Vp-p, f = 1 kHz IOUT = 30 mA, VIN = 5.25 V f = 10 kHz (VOUT ≥ 4.1 V), VIN = Set VOUT + 1.0 V f = 100 kHz (VOUT < 4.1 V) 80 dB 75 65 2.0 Output Voltage VOUT/Ta Temperature Coefficient −40C ≤ Ta ≤ 85C Short Current Limit 0 VOUT ≥ 4.1 V Set VOUT + 0.3 V ≤ VIN VOUT ≥ 4.1 V ≤ 5.25 V Set VOUT + 0.5 V ≤ VIN 1.7 V ≤ VOUT ≤ 5.0 V < 4.1 V Input Voltage(1) ISC mA Refer to Product-specific Electrical Characteristics 2.2 V ≤ VIN ≤ 5.0 V RR Unit x0.99 1 mA ≤ IOUT ≤ 150 mA Dropout Voltage VOUT/VIN Line Regulation Max. 150 VDIF Istandby Typ. VOUT ≥ 2.0 V Output Current VOUT/IOUT Load Regulation Min. VOUT = 0 V 5.25 V ±30 ppm /°C 40 mA 0.3 0.6 A V 1.0 0.4 V All test categories were tested on the products under the pulse load condition (Tj ≈ Ta = 25°C) except Output Noise, Ripple Rejection, and Output Voltage Temperature Coefficient. (1) The maximum input voltage (Electrical Characteristics) is 5.25 V. If, for any reason the maximum input voltage exceeds 5.25 V, it has to be no more than 5.5 V with 500 hrs of the total operating time. 5 RP112x No. EA-258-180621 ELECTRICAL CHARACTERISTICS (continued) Unless otherwise noted, VIN = 5.25 V (VOUT ≥ 4.1 V), VIN = Set VOUT + 1.0 V (1.5 V < VOUT < 4.1 V), VIN = 2.5 V (VOUT ≤ 1.5 V), IOUT = 1 mA, CIN = COUT = 1.0 F The specifications surrounded by are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C. RP112xxxxB/D Electrical Characteristics Symbol Item en RLOW Output Noise (Ta = 25°C) Conditions BW = 10 Hz to 100 kHz, IOUT = 30 mA Auto-discharge Nch Tr. ON Resistance VIN = 4.0 V, VCE = 0 V (RP112xxxxD only) Min. Typ. Max. Unit 10 Vrms 60  All test categories were tested on the products under the pulse load condition (Tj ≈ Ta = 25°C) except Output Noise, Ripple Rejection, and Output Voltage Temperature Coefficient. 6 RP112x No. EA-258-180621 The specifications surrounded by are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C. Product-specific Electrical Characteristics VOUT Product Name RP112x12xx RP112x12xx5 RP112x13xx RP112x14xx RP112x15xx RP112x16xx RP112x17xx RP112x18xx RP112x18xx5 RP112x19xx RP112x20xx RP112x21xx RP112x22xx RP112x23xx RP112x24xx RP112x25xx RP112x26xx RP112x27xx RP112x28xx RP112x28xx5 RP112x29xx RP112x29xx5 RP112x30xx RP112x31xx RP112x31xx5 RP112x32xx RP112x33xx RP112x34xx RP112x35xx RP112x36xx RP112x37xx RP112x38xx RP112x39xx RP112x40xx RP112x41xx RP112x42xx RP112x43xx RP112x44xx RP112x45xx RP112x46xx RP112x47xx RP112x48xx Min. 1.180 1.230 1.280 1.380 1.480 1.580 1.680 1.780 1.830 1.880 1.980 2.079 2.178 2.277 2.376 2.475 2.574 2.673 2.772 2.822 2.871 2.921 2.970 3.069 3.119 3.168 3.267 3.366 3.465 3.564 3.663 3.762 3.861 3.960 4.059 4.158 4.257 4.356 4.455 4.554 4.653 4.752 Ta = 25°C Typ. 1.20 1.25 1.30 1.40 1.50 1.60 1.70 1.80 1.85 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.85 2.90 2.95 3.00 3.10 3.15 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 4.60 4.70 4.80 Max. 1.220 1.270 1.320 1.420 1.520 1.620 1.720 1.820 1.870 1.920 2.020 2.121 2.222 2.323 2.424 2.525 2.626 2.727 2.828 2.879 2.929 2.980 3.030 3.131 3.182 3.232 3.333 3.434 3.535 3.636 3.737 3.838 3.939 4.040 4.141 4.242 4.343 4.444 4.545 4.646 4.747 4.848 −40°C ≤ Ta ≤ 85°C Min. Typ. Max. 1.20 1.170 1.230 1.220 1.25 1.280 1.30 1.270 1.330 1.40 1.370 1.430 1.470 1.50 1.530 1.60 1.570 1.630 1.70 1.670 1.730 1.770 1.80 1.830 1.85 1.820 1.880 1.90 1.870 1.930 1.970 2.00 2.030 2.10 2.069 2.132 2.20 2.167 2.233 2.266 2.30 2.335 2.40 2.364 2.436 2.50 2.463 2.538 2.561 2.60 2.639 2.70 2.660 2.741 2.80 2.758 2.842 2.807 2.85 2.893 2.90 2.857 2.944 2.95 2.906 2.994 2.955 3.00 3.045 3.10 3.054 3.147 3.15 3.103 3.197 3.152 3.20 3.248 3.30 3.251 3.350 3.40 3.349 3.451 3.448 3.50 3.553 3.60 3.546 3.654 3.70 3.645 3.756 3.743 3.80 3.857 3.90 3.842 3.959 4.00 3.940 4.060 4.039 4.10 4.162 4.20 4.137 4.263 4.30 4.236 4.365 4.334 4.40 4.466 4.50 4.433 4.568 4.60 4.531 4.669 4.630 4.70 4.771 4.80 4.728 4.872 VDIF Ta = 25°C Typ. Max. 0.39 0.80 0.39 0.80 0.37 0.70 0.34 0.60 0.32 0.50 0.32 0.50 0.29 0.41 0.29 0.41 0.29 0.41 0.29 0.41 0.25 0.36 0.25 0.36 0.25 0.36 0.25 0.36 0.25 0.36 0.22 0.31 0.22 0.31 0.22 0.31 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 0.20 0.28 7 RP112x No. EA-258-180621 APPLICATION INFORMATION TYPICAL APPLICATIONS VDD C1 RP112x CE VOUT VOUT C2 GND CE Control External Components Symbol Description C1 (CIN) 1.0 µF, Ceramic Capacitor, GRM155B31A105KE15, MURATA C2 (COUT) 1.0 µF, Ceramic Capacitor, GRM155B31A105KE15, MURATA TECHNICAL NOTES Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a 1.0 F or more capacitor C2. In case of using a tantalum capacitor, the output may be unstable due to inappropriate ESR. Therefore, the full range of operating conditions for the capacitor in the application should be considered. PCB Layout The high impedances of VDD and GND could be a reason for the noise pickup and unstable operation. Therefore, it is imperative that the impedances of VDD and GND be the lowest possible. Also, place a 1.0 µF or more capacitor (C1) between VDD pin and GND pin as close as possible to each other. As for C2 output capacitor that is used for phase compensation, place it between VOUT pin and GND as close as possible to each other (Refer to TYPICAL APPLICATIONS). 8 RP112x No. EA-258-180621 TYPICAL CHARACTERISTICS Typical Characteristics are intended to be used as reference data; they are not guaranteed. 1) Output Voltage vs. Output Current (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F, Ta = 25C) RP112x28xx 1.4 3.2 1.2 2.8 1.0 Output Voltage VOUT (V) Output Voltage VOUT (V) RP112x12xx VIN=2.0V VIN=3.0V 0.8 VIN=4.0V 0.6 VIN=5.25V 0.4 0.2 2.0 VIN=3.1V 1.6 VIN=3.8V VIN=4.1V 1.2 VIN=4.8V 0.8 VIN=5.25V 0.4 0 0 0 50 100 150 200 250 300 0 50 100 150 200 Output Current IOUT (mA) Output Current IOUT (mA) RP112x40xx RP112x48xx 250 300 250 300 5.4 4.5 4.8 4.0 3.5 3.0 VIN=4.3V 2.5 VIN=4.5V Output Voltage VOUT (V) Output Voltage VOUT (V) 2.4 VIN=4.8V 2.0 VIN=5.25V 1.5 1.0 4.2 3.6 VIN=5.25V 3.0 2.4 1.8 1.2 0.6 0.5 0 0 0 50 100 150 200 250 300 0 50 100 150 200 Output Current IOUT (mA) Output Current IOUT (mA) 2) Output Voltage vs. Input Voltage (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F, Ta = 25C) RP112x28xx 1.4 3.2 1.2 2.8 1.0 0.8 0.6 0.4 IOUT=1mA IOUT=30mA IOUT=50mA 0.2 Output Voltage VOUT (V) Output Voltage VOUT (V) RP112x12xx 2.4 2.0 1.6 1.2 IOUT=1mA IOUT=30mA IOUT=50mA 0.8 0.4 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Input Voltage VIN (V) Input Voltage VIN (V) 9 RP112x No. EA-258-180621 RP112x40xx RP112x48xx 5.4 4.0 4.8 3.5 4.2 3.0 2.5 IOUT=1mA 2.0 IOUT=30mA 1.5 IOUT=50mA 1.0 Output Voltage VOUT (V) Output Voltage VOUT (V) 4.5 3.6 3.0 2.4 1.8 IOUT=1mA 1.2 0.5 0.6 0 0 IOUT=30mA IOUT=50mA 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Input Voltage VIN (V) Input Voltage VIN (V) 3) Supply Current vs. Input Voltage (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F, Ta = 25C) RP112x28xx 100 100 90 90 80 80 Supply Current ISS (µA) Supply Current ISS (µA) RP112x12xx 70 60 50 40 30 20 10 70 60 50 40 30 20 10 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Input Voltage VIN (V) Input Voltage VIN (V) RP112x40xx RP112x48xx 100 100 90 Supply Current ISS (µA) Supply Current ISS (µA) 90 80 70 60 50 40 30 20 70 60 50 40 30 20 10 10 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Input Voltage V IN (V) 10 80 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Input Voltage V IN (V) RP112x No. EA-258-180621 4) Output Voltage vs. Temperature (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F, IOUT = 1 mA) RP112x12xx RP112x28xx VIN=2.2V VIN=3.8V 2.85 1.24 2.84 1.23 2.83 Output Voltage VOUT (V) Output Voltage VOUT (V) 1.25 1.22 1.21 1.20 1.19 1.18 1.17 1.16 2.82 2.81 2.80 2.79 2.78 2.77 2.76 1.15 2.75 -50 -25 0 25 50 75 100 -50 -25 Temperature Topt (ﾟC) RP112x40xx 25 50 75 100 RP112x48xx VIN=5.0V 4.05 VIN=5.25V 4.85 4.04 4.84 4.03 4.83 Output Voltage VOUT (V) Output Voltage VOUT (V) 0 Temperature Topt (ﾟC) 4.02 4.01 4.00 3.99 3.98 3.97 4.82 4.81 4.80 4.79 4.78 4.77 4.76 3.96 4.75 3.95 -50 -25 0 25 50 75 -50 100 -25 0 25 50 75 100 Temperature Topt (ﾟC) Temperature Topt (ﾟC) 5) Supply Current vs. Temperature (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F, IOUT = 0 mA) RP112x12xx RP112x28xx VIN=2.2V 80 75 Supply Current ISS (µA) 75 Supply Current ISS (µA) VIN=3.8V 80 70 65 60 55 70 65 60 55 50 50 -50 -25 0 25 50 Temperature Topt (ﾟC) 75 100 -50 -25 0 25 50 75 100 Temperature Topt (ﾟC) 11 RP112x No. EA-258-180621 RP112x40xx RP112x48xx VIN=5.0V 80 VIN=5.25V 100 95 Supply Current ISS (µA) Supply Current ISS (µA) 75 70 65 60 55 90 85 80 75 70 65 60 55 50 50 -50 -25 0 25 50 75 -50 100 -25 0 25 50 75 100 Temperature Topt (ﾟC) Temperature Topt (ﾟC) 6) Dropout Voltage vs. Output Current (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F) RP112x12xx RP112x28xx 250 500 400 Dropout Voltage VDIF (mV) Dropout Voltage VDIF (mV) 450 85ﾟC 25ﾟC -40ﾟC 350 300 250 200 150 100 200 85ﾟC 25ﾟC -40ﾟC 150 100 50 50 0 0 0 50 100 150 0 50 100 Output Current IOUT (mA) Output Current IOUT (mA) RP112x40xx RP112x48xx 150 200 250 Dropout Voltage VDIF (mV) Dropout Voltage VDIF (mV) 180 200 85ﾟC 25ﾟC -40ﾟC 150 100 50 160 85ﾟC 25ﾟC -40ﾟC 140 120 100 80 60 40 20 0 0 0 50 100 Output Current IOUT (mA) 12 150 0 50 100 Output Current IOUT (mA) 150 RP112x No. EA-258-180621 7) Dropout Voltage vs. Set Output Voltage (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F, Ta = 25C) 400 Dropout Voltage VDIF (mV) 350 150mA 50mA 30mA 1mA 300 250 200 150 100 50 0 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 Set Output Voltage VREG (V) 8) Dropout Voltage vs. Temperature (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F) RP112x12xx 250 500 400 Dropout Voltage VDIF (mV) 150mA 100mA 50mA 450 Dropout Voltage V DIF (mV) RP112x28xx 350 300 250 200 150 100 150mA 100mA 50mA 200 150 100 50 50 0 0 -50 -25 0 25 50 75 100 -50 0 25 50 Temperature Topt (ﾟC) Temperature Topt (ﾟC) RP112x40xx RP112x48xx 75 100 75 100 200 250 200 150mA 100mA 50mA 180 150mA 100mA 50mA Dropout Voltage VDIF (mV) Dropout Voltage V DIF (mV) -25 150 100 50 160 140 120 100 80 60 40 20 0 0 -50 -25 0 25 50 Temperature Topt (ﾟC) 75 100 -50 -25 0 25 50 Temperature Topt (ﾟC) 13 RP112x No. EA-258-180621 9) Ripple Rejection vs. Input Voltage (C1 = none, C2 = Ceramic 1.0 F, Ripple = 0.2 Vp-p, Ta = 25C) RP112x12xx IOUT=1mA 120 110 100 90 80 70 60 50 40 30 20 10 0 Ripple Rejection RR (dB) Ripple Rejection RR (dB) RP112x12xx f=100Hz f=1kHz f=10kHz f=100kHz 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IOUT=30mA 120 110 100 90 80 70 60 50 40 30 20 10 0 5.0 f=100Hz f=1kHz f=10kHz f=100kHz 1.0 1.5 2.0 2.5 Input Voltage VIN (V) IOUT=1mA f=100Hz f=1kHz f=10kHz f=100kHz 2.5 3.0 3.5 4.0 4.5 5.0 2.5 3.0 3.5 4.9 Ripple Rejection RR (dB) Ripple Rejection RR (dB) Input Voltage VIN (V) 14 4.5 5.0 RP112x40xx f=100Hz f=1kHz f=10kHz f=100kHz 4.6 4.0 Input Voltage VIN (V) IOUT=1mA 4.3 5.0 f=100Hz f=1kHz f=10kHz f=100kHz RP112x40xx 4.0 4.0 4.5 IOUT=30mA 120 110 100 90 80 70 60 50 40 30 20 10 0 Input Voltage VIN (V) 120 110 100 90 80 70 60 50 40 30 20 10 0 3.5 RP112x28xx Ripple Rejection RR (dB) Ripple Rejection RR (dB) RP112x28xx 120 110 100 90 80 70 60 50 40 30 20 10 0 3.0 Input Voltage VIN (V) 5.2 IOUT=30mA 120 110 100 90 80 70 60 50 40 30 20 10 0 f=100Hz f=1kHz f=10kHz f=100kHz 4.0 4.3 4.6 4.9 Input Voltage VIN (V) 5.2 RP112x No. EA-258-180621 10) Ripple Rejection vs. Output Current (C1 = none, C2 = Ceramic 1.0F, Ripple = 0.2 Vp-p, Ta = 25C) RP112x12xx RP112x28xx VIN=3.8V VIN=2.2V 110 90 Ripple Rejection RR (dB) Ripple Rejection RR (dB) 100 80 70 60 50 40 f=100Hz f=1kHz f=10kHz f=100kHz 30 20 10 0 0 50 100 120 110 100 90 80 70 60 50 40 30 20 10 0 f=100Hz f=1kHz f=10kHz f=100kHz 0 150 50 100 150 Output Current IOUT (mA) Output Current IOUT (mA) RP112x40xx VIN=5.0V 110 Ripple Rejection RR (dB) 100 90 80 70 60 50 40 f=100Hz f=1kHz f=10kHz f=100kHz 30 20 10 0 0 50 100 150 Output Current IOUT (mA) 11) Ripple Rejection vs. Frequency (C1 = none, C2 = Ceramic 1.0 F, Ripple = 0.2 Vp-p, Ta = 25C) RP112x28xx VIN=2.2V 120 110 100 90 80 70 60 50 40 30 20 10 0 Ripple Rejection RR (dB) Ripple Rejection RR (dB) RP112x12xx 1mA 30mA 50mA 100mA 150mA 0.1 1 10 Frequency f (kHz) 100 1000 VIN=3.8V 120 110 100 90 80 70 60 50 40 30 20 10 0 1mA 30mA 50mA 100mA 150mA 0.1 1 10 100 1000 Frequency f (kHz) 15 RP112x No. EA-258-180621 RP112x40xx VIN=5.0V 120 110 Ripple Rejection RR (dB) 100 90 80 70 60 50 40 30 1mA 30mA 50mA 100mA 150mA 20 10 0 0.1 1 10 100 1000 Frequency f (kHz) 12) Output Spectral Noise Density vs. Frequency (C1 = none, C2 = Ceramic 1.0 F, Ta = 25C) RP112x28xx VIN=2.2V 1.4 1.2 1.0 0.8 0.6 150mA 30mA 0.4 0.2 0 0.01 0.1 1 10 Output Spectral Noise Density µV/√Hz(V) Output Spectral Noise Density µV/√Hz(V) RP112x12xx 100 VIN=3.8V 1.4 1.2 1.0 0.8 0.6 150mA 30mA 0.4 0.2 0 0.01 0.1 Frequency f (kHz) 1.4 1.2 1.0 0.8 0.6 150mA 30mA 0.4 0.2 0 0.1 1 Frequency f (kHz) 16 10 100 RP112x48xx VIN=5.0V 10 100 Output Spectral Noise Density µV/√Hz (V) Output Spectral Noise Density µV/√Hz(V) RP112x40xx 0.01 1 Frequency f (kHz) VIN=5.25V 1.4 1.2 1.0 0.8 0.6 150mA 30mA 0.4 0.2 0 0.01 0.1 1 Frequency f (kHz) 10 100 RP112x No. EA-258-180621 13) Input Transient Response (C1 = none, C2 = Ceramic 1.0 F, IOUT = 30mA, tr = tf = 5.0 s, Ta = 25C) RP112x12xx RP112x28xx 3.5 5.0 1.205 1.200 Output Voltage 1.190 3.5 3.0 2.5 2.805 2.800 2.795 Output Voltage 2.790 1.185 2.785 10 20 30 40 50 60 70 80 90 100 0 10 20 30 Time t (µs) 50 60 70 80 90 100 Time t (µs) RP112x40xx RP112x48xx 5.5 5.5 5.0 5.0 3.5 3.0 4.005 4.000 Input Voltage VIN (V) 4.0 Input Voltage 4.5V ⇔ 5.25V Output Voltage V OUT (V) 4.5 3.995 40 Output Voltage 3.990 4.5 Input Voltage 5.0V ⇔ 5.25V 4.0 3.5 3.0 4.805 4.800 4.795 Input Voltage VIN (V) 0 Output Voltage V OUT (V) 4.0 Input Voltage 3.8V ⇔ 4.8V Input Voltage VIN (V) 1.0 Output Voltage V OUT (V) 2.0 1.5 1.195 4.5 2.5 Input Voltage 2.2V ⇔ 3.2V Input Voltage VIN (V) Output Voltage V OUT (V) 3.0 Output Voltage 4.790 3.985 0 10 20 30 40 50 60 70 80 4.785 90 100 0 10 20 30 Time t (µs) 40 50 60 70 80 90 100 Time t (µs) 14) Load Transient Response (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F, tr = tf = 0.5 s, Ta = 25C) RP112x12xx 50 1.22 0 1.20 Output Voltage 1.18 1.16 Output Voltage V OUT (V) 100 Output Current 50mA ⇔ 100mA V IN=2.2V 150 Output Current IOUT (mA) Output Voltage V OUT (V) VIN=2.2V Output Current 1mA ⇔ 150mA 300 150 0 1.25 1.20 Output Voltage 1.15 Output Current IOUT (mA) RP112x12xx 1.10 0 10 20 30 40 50 60 Time t (µs) 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 Time t (µs) 17 RP112x No. EA-258-180621 RP112x28xx 50 Output Current 50mA ⇔ 100mA 0 2.80 Output Voltage 2.78 Output Voltage V OUT (V) 100 2.82 VIN=3.8V 150 Output Current IOUT (mA) Output Current 1mA ⇔ 150mA 0 2.85 2.80 Output Voltage 2.75 10 20 30 40 50 60 70 80 0 90 100 20 40 60 RP112x40xx RP112x40xx 50 Output Current 50mA ⇔ 100mA 0 4.00 Output Voltage Output Voltage V OUT (V) 100 3.98 VIN=5.0V 150 Output Current IOUT (mA) Output Voltage V OUT (V) VIN=5.0V 4.02 80 100 120 140 160 180 200 Time t (µs) Time t (µs) Output Current 1mA ⇔ 150mA 300 150 0 4.05 4.00 Output Voltage 3.95 3.90 3.96 0 10 20 30 40 50 60 70 80 0 90 100 20 40 60 RP112x48xx RP112x48xx 50 0 4.80 Output Voltage 4.75 Output Voltage V OUT (V) 100 Output Current 50mA ⇔ 100mA VIN=5.25V 150 Output Current IOUT (mA) VIN=5.25V 4.85 80 100 120 140 160 180 200 Time t (µs) Time t (µs) Output Current 1mA ⇔ 150mA 300 150 0 4.85 4.80 Output Voltage 4.75 4.70 4.70 0 Output Current IOUT (mA) 0 Output Voltage V OUT (V) 150 2.70 2.76 10 20 30 40 50 60 Time t (µs) 18 300 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 Time t (µs) Output Current IOUT (mA) Output Voltage V OUT (V) VIN=3.8V Output Current IOUT (mA) RP112x28xx RP112x No. EA-258-180621 15) Turn on Speed with CE pin (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F, Ta = 25C) RP112x12xx RP112x28xx VIN=3.8V 3 6 Output Voltage 1.2 IOUT=0mA IOUT=30mA IOUT=150mA 0.8 0.4 3.0 Output Voltage 1.8 1.2 IOUT=0mA IOUT=30mA IOUT=150mA 0 0.0 0 50 100 150 200 0 2.4 0.6 0.00 2 CE Input Voltage 0V ⇒ 3.8V 250 0 50 Time t (µs) 100 150 200 250 Time t (µs) RP112x40xx RP112x48xx VIN=5.0V VIN=5.25V 6 6 0 5 4 Output Voltage 3 IOUT=0mA IOUT=30mA IOUT=150mA 2 1 Output Voltage VOUT (V) 2 CE Input Voltage VCE (V) Output Voltage VOUT (V) 4 CE Input Voltage 0V ⇒ 5.0V 2 5 0 4 Output Voltage 3 2 IOUT=0mA IOUT=30mA IOUT=150mA 1 0 4 CE Input Voltage 0V ⇒ 5.25V CE Input Voltage VCE (V) 1.6 0 Output Voltage VOUT (V) 1 CE Input Voltage 0V ⇒ 2.2V 4 CE Input Voltage VCE (V) Output Voltage VOUT (V) 2 CE Input Voltage VCE (V) VIN=2.2V 0 0 50 100 150 200 250 0 50 100 150 200 250 Time t (µs) Time t (µs) 16) Turn off Speed with CE pin (RP112xxxxB) （C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F, Ta = 25C） RP112x12xx RP112x28xx 2 0 1.6 Output Voltage 1.2 IOUT=0mA IOUT=30mA IOUT=150mA 0.8 0.4 CE Input Voltage 3.8V ⇒ 0V 0 3.0 2.4 Output Voltage 1.8 IOUT=0mA IOUT=30mA IOUT=150mA 1.2 0.6 0 0.0 2 CE Input Voltage VCE (V) 1 6 4 Output Voltage VOUT (V) CE Input Voltage 2.2V ⇒ 0V VIN=3.8V 3 CE Input Voltage VCE (V) Output Voltage VOUT (V) VIN=2.2V 0 0.0 0 40 80 Time t (s) 120 160 200 0 40 80 120 160 200 Time t (s) 19 RP112x No. EA-258-180621 RP112x40xB 6 4 CE Input Voltage 5.0V ⇒ 0V 2 5 0 4 Output Voltage 3 IOUT=0mA IOUT=30mA IOUT=150mA 2 1 CE Input Voltage VCE (V) Output Voltage VOUT (V) VIN=5.0V 0 0 40 80 120 160 200 Time t (s) 17) Turn off Speed with CE pin (RP112xxxxD) (C1 = Ceramic 1.0 F, C2 = Ceramic 1.0 F, Ta = 25C) RP112x28xD 1 0 Output Voltage 1.2 IOUT=0mA IOUT=30mA IOUT=150mA 0.8 0.4 3.0 6 4 2 0 2.4 Output Voltage 1.8 1.2 IOUT=0mA IOUT=30mA IOUT=150mA 0 0.0 0 200 400 600 800 1000 1200 0 Time t (µs) VIN=5.0V 6 2 0 5 4 Output Voltage IOUT=0mA IOUT=30mA IOUT=150mA 2 1 0 0 200 400 600 Time t (µs) 800 1000 1200 CE Input Voltage VCE (V) 4 CE Input Voltage 5.0V ⇒ 0V 3 200 400 600 Time t (µs) RP112x40xD Output Voltage VOUT (V) CE Input Voltage 3.8V ⇒ 0V 0.6 0 0.0 20 Output Voltage VOUT (V) 2 CE Input Voltage 2.2V ⇒ 0V 1.6 VIN=3.8V 3 CE Input Voltage VCE (V) Output Voltage VOUT (V) VIN=2.2V 800 1000 1200 CE Input Voltage VCE (V) RP112x12xD RP112x No. EA-258-180621 18) Inrush Current (C1 = Ceramic 1.0 F, IOUT = 0 mA, Ta = 25°C) RP112x12xx 3.5 CE Input Voltage 0V ⇒ 2.2V 2.8 1.2 2.1 Output Voltage CE C2=1.0µF C2=1.5µF C2=2.2µF C2=3.3µF 0.4 0 300 200 Output Voltage VOUT (V) 0.8 Inrush Current Irush (mA) 1.6 CE Input Voltage 0V ⇒ 3.8V 1.4 Output Voltage 0.7 CE C2=1.0µF 0 300 C2=1.5µF C2=2.2µF 200 100 100 0 0 Inrush Current Inrush Current 0 30 60 90 120 -100 150 0 30 RP112x40xx VIN=5.0V CE C2=1.0µF 0 C2=1.5µF 300 C2=2.2µF 200 3 Output Voltage VOUT (V) Output Voltage Inrush Current Irush (mA) 4 3 Output Voltage VOUT (V) CE Input Voltage 0V ⇒ 5.25V 5 1 Output Voltage 2 CE C2=1.0µF C2=1.5µF C2=2.2µF 1 0 30 60 Time t (µs) 90 120 300 200 100 100 0 0 Inrush Current 0 -100 150 VIN=5.25V 6 CE Input Voltage 0V ⇒ 5.0V 2 120 RP112x48xx 6 4 90 Time t (µs) Time t (µs) 5 60 Inrush Current Irush (mA) 2.0 VIN=3.8V 4.2 Inrush Current Irush (mA) VIN=2.2V 2.4 Output Voltage VOUT (V) RP112x28xx Inrush Current -100 150 0 30 60 90 120 -100 150 Time t (µs) 21 RP112x No. EA-258-180621 Equivalent Series Resistance vs. Output Current When using these ICs, consider the following points: The relations between IOUT (Output Current) and ESR of an output capacitor are shown below. The conditions when the white noise level is under 40 μV (Avg.) are marked as the hatched area in the graph. Measurement Conditions Frequency Band: 10 Hz to 2 MHz Temperature: −40°C to 85°C Hatched Area: Noise level is under 40 V (Avg.) C1, C2: 1.0 F or more RP112x12xx VIN=2.0V to 5.25V 1000 100 100 10 10 1 0.01 0.01 0 25 50 75 100 125 Output Current IOUT (mA) 150 RP112x40xx VIN=4.0V to 5.25V 1000 100 ESR (Ω) 1 0.1 0.1 10 1 0.1 0.01 0 22 VIN=2.8V to 5.25V 1000 ESR (Ω) ESR (Ω) RP112x28xx 25 50 75 100 125 Output Current IOUT (mA) 150 0 25 50 75 100 125 Output Current IOUT (mA) 150 POWER DISSIPATION DFN(PLP)1010-4 Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Environment Board Material Board Dimensions Copper Ratio Through-holes Measurement Conditions Mounting on Board (Wind Velocity = 0 m/s) Glass Cloth Epoxy Plastic (Four-Layer Board) 76.2 mm × 114.3 mm × 0.8 mm Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square φ 0.2 mm × 11 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation Thermal Resistance (θja) Thermal Characterization Parameter (ψjt) 800 mW θja = 125°C/W ψjt = 58°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 1200 1000 Power Dissipation (mW) 1000 800 800 600 400 200 0 0 25 50 75 85 100 125 150 Ambient Temperature (°C) Power Dissipation vs. Ambient Temperature Measurement Board Pattern The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C. Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of use and the total years of use must be limited as follows: Total Hours of Use Total Years of Use (4 hours/day) 13,000 hours 9 years i DFN(PLP)1010-4 PACKAGE DIMENSIONS Ver. A ∗ DFN(PLP)1010-4 Package Dimensions (Unit: mm) * ∗ The tab on the bottom of the package shown by blue circle is a substrate potential (GND). It is recommended that this tab be connected to the ground plane on the board but it is possible to leave the tab floating. i POWER DISSIPATION SC-88A Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following conditions are used in this measurement. Measurement Conditions Item Standard Test Land Pattern Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Double-Sided Board) Board Dimensions 40 mm × 40 mm × 1.6 mm Top Side: Approx. 50% Copper Ratio Bottom Side: Approx. 50% φ 0.5 mm × 44 pcs Through-holes Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Standard Test Land Pattern Power Dissipation 380 mW Thermal Resistance (θja) θja = 263°C/W Thermal Characterization Parameter (ψjt) ψjt = 75°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 600 40 475 400 380 300 40 Power Dissipation (mW) 500 200 100 0 0 25 50 75 85 100 125 Ambient Temperature (°C) 150 Power Dissipation vs. Ambient Temperature Measurement Board Pattern The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C. Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of use and the total years of use must be limited as follows: Total Hours of Use Total Years of Use (4 hours/day) 13,000 hours 9 years i PACKAGE DIMENSIONS SC-88A Ver. A SC-88A Package Dimensions i POWER DISSIPATION SOT-23-5 Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Board Material Mounting on Board (Wind Velocity = 0 m/s) Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square φ 0.3 mm × 7 pcs Copper Ratio Through-holes Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 660 mW Thermal Resistance (θja) θja = 150°C/W Thermal Characterization Parameter (ψjt) ψjt = 51°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 1000 900 830 Power Dissipation (mW) 800 700 600 660 500 400 300 200 100 0 0 25 50 75 85 100 125 Ambient Temperature (°C) 150 Power Dissipation vs. Ambient Temperature Measurement Board Pattern The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C. Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of use and the total years of use must be limited as follows: Total Hours of Use Total Years of Use (4 hours/day) 13,000 hours 9 years i SOT-23-5 PACKAGE DIMENSIONS Ver. A 2.9±0.2 1.1±0.1 1.9±0.2 0.8±0.1 (0.95) 4 1 2 0～0.1 0.2min. +0.2 1.6-0.1 5 2.8±0.3 (0.95) 3 0.4±0.1 +0.1 0.15-0.05 SOT-23-5 Package Dimensions i 1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to Ricoh sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written consent of Ricoh. 3. 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