RP114K121B-TR

RP114x SERIES 300 mA LDO REGULATOR No.EA-236-190130 OUTLINE The RP114x is a CMOS-based voltage regulator IC with high output voltage accuracy, low supply current, low dropout, and high ripple rejection. This IC consists of a voltage reference unit, an error amplifier, resistors for setting output voltage, a short current limit circuit, a chip enable circuit, and so on. The RP114x features a minimum input voltage from 1.4V and the output voltage, which can be set from 0.8V to 3.6V (in 0.1V step). The output voltage of this IC is internally fixed. This IC perform with low dropout voltage due to built-in transistor with low ON resistance. Low supply current and a chip enable function prolong the battery life of each system. The ripple rejection, line transient response and load transient response of the RP114x is excellent, thus this IC is very suitable for the power supply for hand-held communication equipment. Since the packages for this IC are DFN(PLP)1010-4、DFN(PLP)1010-4B、SC-88A、SOT-23-5, therefore high density mounting of the IC on boards is possible. FEATURES  Supply Current ................................................................ Typ. 50µA  Standby Current ............................................................. Typ. 0.1µA  Input Voltage Range ....................................................... 1.4V to 5.25V  Output Voltage Range(1) ................................................. 0.8V to 3.6V (0.1V steps)  Output Voltage Accuracy ................................................ 1.0% (VSET>2.0V, Ta=25C)  Temperature-Drift Coefficient of Output Voltage............. Typ. 80ppm/C  Dropout Voltage .............................................................. Typ. 0.25V (IOUT=300mA, VSET=2.8V)  Ripple Rejection ............................................................. Typ. 75dB (f=1kHz)  Line Regulation ............................................................... Typ. 0.02%/V ● Packages ꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏ DFN(PLP)1010-4、DFN(PLP)1010-4B、 SC-88A、SOT-23-5  Built-in Fold Back Protection Circuit ............................... Typ. 60mA (Current at short mode)  Ceramic capacitors are recommended to be used with this IC ...... 1.0µF or more APPLICATIONS  Power source for portable communication equipment.  Power source for electrical appliances such as cameras, VCRs and camcorders.  Power source for battery-powered equipment. (1) For other voltages, please refer to Product-specific Electrical Characteristics. 1 RP114x No.EA-236-190130 SELECTION GUIDE The set output voltage, the auto discharge function(1), and the package type for the ICs are user-selectable options. Product Name Package Quantity per Reel Pb Free Halogen Free DFN(PLP)1010-4 10,000 pcs Yes Yes DFN(PLP)1010-4B 10,000 pcs Yes Yes RP114Qxx2(y)-TR-FE SC-88A 3,000 pcs Yes Yes RP114Nxx1(y)-TR-FE SOT-23-5 3,000 pcs Yes Yes RP114Kxx1(y)-TR RP114Kxx1(y)-TRB xx : Specify the set output voltage within the range of 0.8 V (08) to 3.6 V (36) in 0.1 V step. (y): If the output voltage includes the 3rd digit, indicate the digit of 0.01V. Ex. If the output voltage is 1.25V, RP114K121∗5-TR If the output voltage is 1.85V, RP114K181∗5-TR : Specify a combination of the CE pin polarity and the auto-discharge function. (B) “H” Active, without Auto-Discharge function (D) “H” Active, with Auto-Discharge function BLOCK DIAGRAMS VDD VOUT VDD Vref Vref Current Limit CE 2 Current Limit GND CE RP114xxxxB Block Diagram (1) VOUT GND RP114xxxxD Block Diagram Auto-Discharge function quickly lowers the output voltage to 0V by releasing the electrical charge in the external capacitor when the chip enable signal is switched from the active mode to the standby mode. RP114x No.EA-236-190130 PIN DESCRIPTIONS RP114K [DFN(PLP)1010-4] Bottom View Top View 4 RP114K [DFN(PLP)1010-4B] 3 3 4 Bottom View Top View 4 3 3   1 2 2 1 1 2 RP114Q (SC-88A) 5 5 (mark side) 2 2 1 RP114N (SOT-23-5) 4 1 4 4 (mark side) 3 1 2 3 RP114K Pin Description [DFN(PLP)1010-4 / DFN(PLP)1010-4B] Pin No Symbol Pin Description 1 VOUT Output Pin 2 GND Ground Pin 3 CE 4 VDD Chip Enable Pin ("H" Active) Input Pin   Tab is GND level. (They are connected to the reverse side of this IC.) The tab is better to be connected to the GND, but leaving it open is also acceptable. RP114Q Pin Description (SC-88A) Pin No Symbol Description 1 CE Chip Enable Pin (“H” Active) 2 NC No Connection 3 GND Ground Pin 4 VOUT Output Pin 5 VDD Input Pin 3 RP114x No.EA-236-190130 RP114N Pin Description (SOT-23-5) 4 Pin No Symbol Description 1 VDD Input Pin 2 GND Ground Pin 3 CE Chip Enable Pin (“H” Active) 4 NC No Connection 5 VOUT Output Pin RP114x No.EA-236-190130 ABSOLUTE MAXIMUM RATINGS Symbol Item Rating Unit VIN Input Voltage 6.0 V VCE Input Voltage (CE Pin) 6.0 V VOUT Output Voltage 0.3 to VIN0.3 V IOUT Output Current 400 mA PD Power Dissipation(1) DFN(PLP)1010-4, JEDEC STD. 51 800 DFN(PLP)1010-4B, JEDEC STD. 51 800 SC-88A, RICOH Evaluation Board 380 SOT-23-5, JEDEC STD. 51 660 mW Tj Junction Temperature Range 40 to 125 C Tstg Storage Temperature Range 55 to 125 C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings are not assured. RECOMMENDED OPERATING CONDITIONS Symbol Item VIN Input Voltage Ta Operating Temperature Range Rating 1.4 to 5.25 Unit (2) −40 to 85 V °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such ratings by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) Refer to POWER DISSIPATION for detailed information. If the input voltage exceeds the maximum value of 5.25 V for some reasons, the operational accumulated time becomes up to 500 hours at 5.5V. (2) 5 RP114x No.EA-236-190130 ELECTRICAL CHARACTERISTICS VIN = VSET(1)+1.0 V (VSET > 1.5 V)，VIN = 2.5 V (VSET ≤ 1.5V)，IOUT = 1 mA，CIN = COUT = 1.0 µF, unless otherwise noted. The specifications in are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. RP114xxxxB/D Electrical Characteristics Symbol Item (Ta=25C) Conditions Ta = 25C VOUT Output Voltage -40C ≤ Ta ≤ 85C IOUT Typ. Max. Unit VSET > 2.0 V 0.99 1.01 V VSET ≤ 2.0 V -20 +20 mV VSET > 2.0 V 0.97 1.03 V VSET ≤ 2.0 V -60 +60 mV Output Current VOUT/IOUT Load Regulation Min. 300 1 mA ≤ IOUT ≤ 300 mA mA 15 40 mV VDIF Dropout Voltage ISS Supply Current IOUT = 0 mA 50 75 μA Standby Current VCE = 0 V 0.1 1.0 μA 0.02 0.10 %/V Istandby VOUT /VIN Line Regulation Please refer to Product-specific Electrical Characteristics attached. VSET + 0.5 V ≤ VIN ≤ 5.25 V (VIN ≥ 1.4 V) f=1kHz, Ripple 0.2 Vp-p, RR Ripple Rejection VIN=VSET +1V, IOUT = 30 mA 75 dB (When VSET ≤ 2.0 V, VIN = 3.0 V) Output Voltage VOUT/Ta Temperature Coefficient ISC Short Current Limit IPD CE Pull-down Current VCEH CE Input Voltage “H” VCEL CE Input Voltage “L” en RLOW -40C ≤ Ta ≤ 85C 80 VOUT = 0 V 60 0.3 ppm /C mA 0.6 1.0 μA V 0.4 V Output Noise BW = 10 Hz to 100 kHz, IOUT = 30 mA 75 μVrms Low Output Nch. On Resistance (RP114xxxxD Only) VIN = 4.0 V, VCE = 0 V 50 Ω All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25ºC) except for Output Noise, Ripple Rejection, and Output Voltage Temperature Coefficient. (1) 6 VSET: Set Output Voltage RP114x No.EA-236-190130 The specifications in are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. Dropout Voltage by Set Output Voltage (Ta25C) Dropout Voltage VDIF (V) Set Output Voltage VSET (V) Typ. Max. VSET0.8 0.560 0.720 VSET0.9 0.510 0.650 1.0  VSET < 1.2 0.460 0.590 1.2  VSET < 1.4 0.390 0.500 0.350 0.440 1.7  VSET < 2.1 0.300 0.390 2.1  VSET < 2.5 0.260 0.340 2.5  VSET < 3.0 0.250 0.300 3.0  VSET  3.6 0.220 0.290 1.4  VSET < 1.7 Condition IOUT300mA 7 RP114x No.EA-236-190130 Product-specific Electrical Characteristics The specifications in Product Name RP114x081x RP114x091x RP114x101x RP114x101x5 RP114x111x RP114x111x5 RP114x121x RP114x121x5 RP114x131x RP114x131x5 RP114x141x RP114x151x RP114x161x RP114x171x RP114x171x5 RP114x181x RP114x181x5 RP114x191x RP114x201x RP114x211x RP114x221x RP114x231x RP114x241x RP114x251x RP114x261x RP114x271x RP114x281x RP114x281x5 RP114x291x RP114x301x RP114x311x RP114x321x RP114x331x RP114x341x RP114x341x5 RP114x351x RP114x361x 8 are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. VOUT [V] (Ta = 25°C) Min. Typ. Max. 0.780 0.800 0.820 0.880 0.900 0.920 0.980 1.000 1.020 1.030 1.050 1.070 1.080 1.100 1.120 1.130 1.150 1.170 1.180 1.200 1.220 1.230 1.250 1.270 1.280 1.300 1.320 1.330 1.350 1.370 1.380 1.400 1.420 1.480 1.500 1.520 1.580 1.600 1.620 1.680 1.700 1.720 1.730 1.750 1.770 1.780 1.800 1.820 1.830 1.850 1.870 1.880 1.900 1.920 1.980 2.000 2.020 2.079 2.100 2.121 2.178 2.200 2.222 2.277 2.300 2.323 2.376 2.400 2.424 2.475 2.500 2.525 2.574 2.600 2.626 2.673 2.700 2.727 2.772 2.800 2.828 2.822 2.850 2.879 2.871 2.900 2.929 2.970 3.000 3.030 3.069 3.100 3.131 3.168 3.200 3.232 3.267 3.300 3.333 3.366 3.400 3.434 3.416 3.450 3.485 3.465 3.500 3.535 3.564 3.600 3.636 VOUT [V] (−40°C ≤ Ta ≤ 85°C) Min. Typ. Max. 0.740 0.800 0.860 0.840 0.900 0.960 0.940 1.000 1.060 0.990 1.050 1.110 1.040 1.100 1.160 1.090 1.150 1.210 1.140 1.200 1.260 1.190 1.250 1.310 1.240 1.300 1.360 1.290 1.350 1.410 1.340 1.400 1.460 1.440 1.500 1.560 1.540 1.600 1.660 1.640 1.700 1.760 1.690 1.750 1.810 1.740 1.800 1.860 1.790 1.850 1.910 1.840 1.900 1.960 1.940 2.000 2.060 2.037 2.100 2.163 2.134 2.200 2.266 2.231 2.300 2.369 2.328 2.400 2.472 2.425 2.500 2.575 2.522 2.600 2.678 2.619 2.700 2.781 2.716 2.800 2.884 2.765 2.850 2.936 2.813 2.900 2.987 2.910 3.000 3.090 3.007 3.100 3.193 3.104 3.200 3.296 3.201 3.300 3.399 3.298 3.400 3.502 3.347 3.450 3.554 3.395 3.500 3.605 3.492 3.600 3.708 VDIF [V] Typ. Max. 0.560 0.720 0.510 0.650 0.460 0.590 0.390 0.500 0.350 0.440 0.300 0.390 0.260 0.340 0.250 0.300 0.220 0.290 RP114x No.EA-236-190130 TEST CIRCUITS VDD VOUT RP114x Series C1 CE V C2 ↓ VOUT IOUT GND C1 = Ceramic 1.0μF C2 = Ceramic 1.0μF Figure 1. Basic Test Circuit VDD VOUT A ISS RP114x Series C1 CE VOUT C2 GND C1 = Ceramic 1.0μF C2 = Ceramic 1.0μF Figure 2. Test Circuit for Supply Current Pulse Generator VDD VOUT RP114x Series P.G. CE C2 ↓ IOUT GND C2 = Ceramic 1.0μF Figure 3. Test Circuit for Ripple Rejection VOUT VDD VOUT C1 RP114x Series CE C2 GND ↓ IOUTa ↓ IOUTb C1 = Ceramic 1.0μF C2 = Ceramic 1.0μF Figure 4. Test Circuit for Load Transient Response 9 RP114x No.EA-236-190130 TECHNICAL NOTES ON EXTERNAL COMPONENTS When using these ICs, consider the following points: Phase Compensation In this IC, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a capacitor C2 with 1.0µF or more and good ESR (Equivalent Series Resistance). (Note: If additional ceramic capacitors are connected with parallel to the output pin with an output capacitor for phase compensation, the operation might be unstable. Because of this, test this IC with as same external components as ones to be used on the PCB.) PCB Layout Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result. Connect a capacitor C1 with a capacitance value as much as 1.0µF or more between VDD and GND pins, and as close as possible to the pins. Set external components, especially the output capacitor C2, as close as possible to the IC, and make wiring as short as possible. Typical Application Circuit VOUT VDD VOUT C1 1.0 µF CE Control 10 RP114x Series CE GND C2 1.0 µF RP114x No.EA-236-190130 ESR vs. Output Current When using these ICs, consider the following points: The relations between IOUT (Output Current) and ESR of an output capacitor are shown below. The conditions when the white noise level is under 40µV (Avg.) are marked as the hatched area in the graph. Measurement conditions Frequency Band: 10Hz to 2MHz Temperature : 40C to 85C C1, C2 : 1.0µF RP114x08xx RP114x25xx VIN=1.4V to 5.25V 100 VIN=2.5V to 5.25V 100 Topt=85°C Ta Topt=85°C Ta 10 Topt=-40°C Ta 1 ESR (Ω) ESR (Ω) 10 0.1 Topt=-40°C Ta 1 0.1 0.01 0.01 0 50 100 150 200 250 300 Output Current IOUT (mA) 0 50 100 150 200 250 300 Output Current IOUT (mA) RP114x36xx VIN=3.6V to 5.25V 100 Topt=85°C Ta ESR (Ω) 10 Topt=-40°C Ta 1 0.1 0.01 0 50 100 150 200 250 Output Current IOUT (mA) 300 11 RP114x No.EA-236-190130 TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 1) Output Voltage vs. Output Current (C11.0F, C21.0F, Ta25C) RP114x08xx 0.7 Output Voltage VOUT (V) 0.8 Output Voltage VOUT (V) RP114x25xx 3.0 0.9 VIN=1.8V VIN=2.8V VIN=3.6V VIN=4.2V VIN=5.0V VIN=5.25V 0.6 0.5 0.4 0.3 0.2 0.1 2.5 VIN=3.5V 2.0 VIN=4.2V 1.5 VIN=5.0V VIN=5.25V 1.0 0.5 0 0 0 0 100 200 300 400 500 600 700 Output Current IOUT (mA) 100 200 300 400 500 600 700 Output Current IOUT (mA) RP114x36xx 4.0 Output Voltage VOUT (V) 3.5 3.0 VIN=4.6V 2.5 VIN=5.0V 2.0 VIN=5.25V 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 Output Current IOUT (mA) 2) Output Voltage vs. Input Voltage (C11.0F, C21.0F, Ta25C) RP114x08xx 0.8 0.7 0.6 0.5 0.4 IOUT=1mA 0.3 IOUT=30mA 0.2 IOUT=50mA 0.1 0 2.5 2.0 1.5 IOUT=1mA IOUT=30mA 1.0 IOUT=50mA 0.5 0 0 12 RP114x25xx 3.0 Output Voltage VOUT (V) Output Voltage VOUT (V) 0.9 1 2 3 4 Input Voltage VIN (V) 5 0 1 2 3 4 Input Voltage VIN (V) 5 RP114x No.EA-236-190130 RP114x36xx Output Voltage VOUT (V) 4.0 3.5 3.0 2.5 2.0 1.5 IOUT=1mA 1.0 IOUT=30mA IOUT=50mA 0.5 0 0 1 2 3 4 5 Input Voltage VIN (V) 3) Supply Current vs. Input Voltage (C11.0F, C21.0F, Ta25C) RP114x25xx 70 70 60 60 Supply Current ISS (µA) Supply Current ISS (µA) RP114x08xx 50 40 30 20 10 50 40 30 20 10 0 0 0 1 2 3 4 Input Voltage VIN (V) 5 0 1 2 3 4 Input Voltage VIN (V) 5 RP114x36xx Supply Current ISS (µA) 70 60 50 40 30 20 10 0 0 1 2 3 4 Input Voltage VIN (V) 5 13 RP114x No.EA-236-190130 4) Output Voltage vs. Temperature (C11.0F, C21.0F, IOUT1mA) RP114x08xx RP114x25xx VIN=1.8V 0.83 0.82 Output Voltage VOUT (V) Output Voltage VOUT (V) 0.85 0.84 0.81 0.80 0.79 0.78 0.77 0.76 0.75 -50 -25 0 25 50 75 Temperature Topt Ta ((°C) C) RP114x36xx Output Voltage VOUT (V) 3.65 3.64 2.55 2.54 2.53 VIN=3.5V 2.52 2.51 2.50 2.49 2.48 2.47 2.46 2.45 -50 100 -25 0 25 50 75 Temperature Topt Ta ((°C) C) 100 VIN=4.6V 3.63 3.62 3.61 3.60 3.59 3.58 3.57 3.56 3.55 -50 -25 0 25 50 75 Temperature Topt Ta ((°C) C) 100 5) Supply Current vs. Temperature (C11.0F, C21.0F, IOUT0mA) RP114x08xx 60 50 40 30 20 10 0 60 50 40 30 20 10 0 -50 14 VIN=3.5V 70 Supply Current ISS (μA) Supply Current ISS (μA) 70 RP114x25xx VIN=1.8V -25 0 25 50 75 Ta ((°C) C) Temperature Topt 100 -50 -25 0 25 50 Ta ((°C) C) Temperature Topt 75 100 RP114x No.EA-236-190130 RP114x36xx VIN=4.6V Supply Current ISS (μA) 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 Temperature Topt Ta ((°C) C) 6) Dropout Voltage vs. Output Current (C11.0F, C21.0F) RP114x08xx RP114x25xx 300 Dropout Voltage VDIF (mV) Dropout Voltage VDIF (mV) 700 600 500 400 300 -40°C 25°C 85°C 200 100 250 200 150 100 -40°C 25°C 85°C 50 0 0 0 50 100 150 200 250 300 Output Current IOUT (mA) 0 50 100 150 200 250 300 Output Current IOUT (mA) RP114x36xx Dropout Voltage VDIF (mV) 250 200 150 100 -40°C 25°C 85°C 50 0 0 50 100 150 200 250 300 Output Current IOUT (mA) 15 RP114x No.EA-236-190130 7) Dropout Voltage vs. Set Output Voltage (C11.0F, C21.0F, Ta25C) Dropout Voltage VDIF (mV) 600 IOUT=30mA 500 IOUT=100mA 400 IOUT=300mA 300 200 100 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 Set Output Voltage VREG (V) 8) Dropout Voltage vs. Temperature (C1none, C21.0F) RP114x08xx RP114x25xx 300 600 Dropout Voltage VDIF (mV) Dropout Voltage VDIF (mV) 700 50mA 150mA 300mA 500 400 300 200 100 0 -25 0 25 50 75 Temperature Topt Ta ((°C) C) 100 150 100 50 250 200 50mA 150mA 300mA 150 100 50 0 -50 -25 0 25 50 Temperature Topt Ta (°C) (C) 75 -50 -25 0 25 50 Temperature Topt Ta ((°C) C) RP114x36xx Dropout Voltage VDIF (mV) 50mA 150mA 300mA 200 0 -50 16 250 100 75 100 RP114x No.EA-236-190130 9) Ripple Rejection vs. Input Voltage (C1none, C21.0F, Ripple0.2Vp-p, Ta25C) Ripple Rejection RR (dB) 100 90 IOUT=1mA 80 70 60 50 40 1kHz 30 20 10kHz 100kHz 10 0 2.5 3.0 RP114x25xx 3.5 4.0 4.5 5.0 Input Voltage VIN (V) IOUT=30mA 100 Ripple Rejection RR (dB) RP114x25xx 90 80 70 60 50 40 30 20 1kHz 10kHz 100kHz 10 0 2.5 5.5 3.0 3.5 4.0 4.5 5.0 Input Voltage VIN (V) 5.5 10) Ripple Rejection vs. Frequency (C1none, C21.0F, Ta25C) RP114x08xx 80 70 60 50 40 30 20 10 0 1mA 30mA 150mA 0.1 1 10 100 Frequency f (kHz) RP114x36xx Ripple Rejection RR (dB) 100 90 80 70 60 50 40 30 20 10 0 RP114x25xx 100 90 80 70 60 50 40 30 20 10 0 Ripple Rejection RR (dB) Ripple Rejection RR (dB) 100 90 VIN=3.0V 1000 VIN=3.5V 1mA 30mA 150mA 0.1 1 10 100 Frequency f (kHz) 1000 VIN=4.6V 1mA 30mA 150mA 0.1 1 10 100 1000 Frequency f (kHz) 17 RP114x No.EA-236-190130 11) Input Transient Response (IOUT30mA, trtf5s, Ta25C 4.5 2.0 1.5 Input Voltage 1.8V2.8V 0.815 1.0 0.810 0.805 Output Voltage 0.800 0.795 Output Voltage VOUT (V) 5.0 2.5 Input Voltage 3.5V4.5V 2.505 3.0 2.500 2.495 2.490 Output Voltage 2.485 0.790 4.0 3.5 Input Voltage VIN (V) RP114x25xx 3.0 Input Voltage VIN (V) Output Voltage VOUT (V) RP114x08xx 2.480 0 20 40 60 80 100 0 20 40 Time t (µs) 60 80 100 Time t (µs) 6.0 5.5 5.0 4.5 4.0 Input Voltage 4.6V5.6V 3.610 3.605 3.600 3.595 3.590 Output Voltage 0 20 40 60 80 Input Voltage VIN (V) Output Voltage VOUT (V) RP114x36xx 100 Time t (µs) 12) Load Transient Response (C11.0F, C21.0F, trtf0.5s, Ta25C Output Current 50mA100mA 0.84 0.82 0.80 0 Output Voltage 0.78 0.76 0.74 Output Voltage VOUT (V) 200 VIN=3.5V 200 150 100 50 Output Current 50mA100mA 2.54 2.52 2.50 2.48 2.46 0 Output Voltage 2.44 100 200 300 Time t (µs) 400 500 0 100 200 300 Time t (µs) 400 500 Output Current IOUT (mA) RP114x25xx 150 100 50 0 18 VIN=1.8V Output Current IOUT (mA) Output Voltage VOUT (V) RP114x08xx RP114x VIN=4.6V Output Current 50mA100mA Output Voltage 200 300 Time t (µs) Output Voltage VOUT (V) RP114x08xx 500 RP114x25xx VIN=1.8V 450 300 150 0 Output Current 1mA300mA 1.0 0.9 0.8 Output Voltage 0.7 0.6 0.5 0 100 200 300 Time t (µs) RP114x36xx Output Voltage VOUT (V) 400 400 VIN=4.6V Output Current 1mA300mA 3.8 3.7 3.6 3.5 3.4 3.3 450 300 150 0 Output Voltage 0 100 200 300 Time t (µs) 400 Output Current 1mA300mA 2.7 2.6 2.5 2.4 2.3 2.2 450 300 150 0 Output Voltage 0 500 VIN=3.5V 100 200 300 Time t (µs) 400 500 500 19 Output Current IOUT (mA) 100 Output Voltage VOUT (V) 0 Output Current IOUT (mA) 3.62 3.60 3.58 3.56 3.54 200 150 100 50 0 Output Current IOUT (mA) Output Voltage VOUT (V) RP114x36xx Output Current IOUT (mA) No.EA-236-190130 RP114x No.EA-236-190130 RP114x25xx VIN=3.5V CE Input Voltage 3 6 2 4 1 0 0.8 0.6 Output Voltage 0.4 IOUT=0mA IOUT=30mA IOUT=300mA 0.2 0.0 0 40 80 Time t (µs) 120 Output Voltgage VOUT (V) VIN=1.8V CE Input Voltage VCE (V) Output Voltgage VOUT (V) RP114x08xx 2 CE Input Voltage IOUT=0mA IOUT=30mA IOUT=300mA 4 3 2 0 Output Voltage 1 CE Input Voltage VCE (V) 13) Turn On Speed with CE pin (C11.0F, C21.0F, Ta25C 0 0 160 40 80 Time t (µs) 120 160 RP114x36xx 4 CE Input Voltage 2 IOUT=0mA IOUT=30mA IOUT=300mA 4 6 0 3 Output Voltage 2 1 CE Input Voltage VCE (V) Output Voltgage VOUT (V) VIN=4.6V 0 0 40 80 Time t (µs) 120 160 14) Turn Off Speed with CE pin (B version) (C11.0F, C21.0F, Ta25C CE Input Voltage 1 0 0.8 IOUT=0mA 0.6 0.4 Output Voltage 0.2 VIN=3.5V 4 2 CE Input Voltage 0 4 IOUT=0mA 3 2 Output Voltage 1 0 0 2 4 6 8 10 12 14 16 18 Time t (ms) 6 0 2 4 6 8 10 12 14 16 18 Time t (ms) CE Input Voltage VCE (V) 3 2 0.0 20 RP114x25xB Output Voltgage VOUT (V) VIN=1.8V CE Input Voltage VCE (V) Output Voltgage VOUT (V) RP114x08xB RP114x No.EA-236-190130 RP114x36xB 6 4 CE Input Voltage 2 0 4 IOUT=0mA 3 2 Output Voltage 1 CE Input Voltage VCE (V) Output Voltgage VOUT (V) VIN=4.6V 0 0 2 4 6 8 10 12 14 16 18 Time t (ms) 15) Turn Off Speed with CE pin (D version) (C11.0F, C21.0F, Ta25C 2 CE Input Voltage 1 0 0.8 IOUT=0mA IOUT=30mA IOUT=300mA 0.6 0.4 0.2 Output Voltage 6 4 CE Input Voltage 2 0 IOUT=0mA IOUT=30mA IOUT=300mA 4 3 2 1 Output Voltage 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800 Time t (µs) VIN=4.6V 6 4 CE Input Voltage 2 0 4 IOUT=0mA IOUT=30mA 3 IOUT=300mA Time t (µs) 2 Output Voltage CE Input Voltage VCE (V) RP114x36xD Output Voltgage VOUT (V) VIN=3.5V 0 0.0 1 Output Voltgage VOUT (V) 3 CE Input Voltage VCE (V) RP114x25xD VIN=1.8V CE Input Voltage VCE (V) Output Voltgage VOUT (V) RP114x08xD 0 0 100 200 300 400 500 600 700 800 Time t (µs) 21 POWER DISSIPATION DFN(PLP)1010-4 Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Environment Board Material Board Dimensions Copper Ratio Through-holes Measurement Conditions Mounting on Board (Wind Velocity = 0 m/s) Glass Cloth Epoxy Plastic (Four-Layer Board) 76.2 mm × 114.3 mm × 0.8 mm Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square φ 0.2 mm × 11 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation Thermal Resistance (θja) Thermal Characterization Parameter (ψjt) 800 mW θja = 125°C/W ψjt = 58°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 1200 1000 Power Dissipation (mW) 1000 800 800 600 400 200 0 0 25 50 75 85 100 125 150 Ambient Temperature (°C) Power Dissipation vs. Ambient Temperature Measurement Board Pattern The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C. Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of use and the total years of use must be limited as follows: Total Hours of Use Total Years of Use (4 hours/day) 13,000 hours 9 years i PACKAGE DIMENSIONS DFN(PLP)1010-4 Ver. B DFN(PLP)1010-4 Package Dimensions ∗ The tab on the bottom of the package shown by blue circle is a substrate potential (GND). It is recommended that this 　tab be connected to the ground plane on the board but it is possible to leave the tab floating. i POWER DISSIPATION DFN(PLP)1010-4B Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Environment Board Material Board Dimensions Copper Ratio Through-holes Measurement Conditions Mounting on Board (Wind Velocity = 0 m/s) Glass Cloth Epoxy Plastic (Four-Layer Board) 76.2 mm × 114.3 mm × 0.8 mm Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square φ 0.2 mm ×11 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Power Dissipation Thermal Resistance (θja) Thermal Characterization Parameter (ψjt) Measurement Result 800 mW θja = 125°C/W ψjt = 58°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 1200 1000 Power Dissipation (mW) 1000 800 800 600 400 200 0 0 25 50 75 85 100 125 150 Ambient Temperature (°C) Power Dissipation vs. Ambient Temperature Measurement Board Pattern The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C. Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of use and the total years of use must be limited as follows: Total Hours of Use Total Years of Use (4 hours/day) 13,000 hours 9 years i PACKAGE DIMENSIONS DFN(PLP)1010-4B Ver. A 0.65 B 3 0.25±0.05 1.00 0.05 0.07±0.05 X4 C0.18 0.05±0.05 ∗ 0.48±0.05 DETAIL : “A” 45° 0.04 “A” 2 1 0.25±0.05 0.48±0.05 0.045 0.05 M S AB 0.03min 0.6max INDEX 4 C0.10 A 1.00 S 0.05 S DFN (PLP) 1010-4B Package Dimensions (Unit: mm) * ∗ The tab on the bottom of the package is a substrate potential (GND). It is recommended that this tab be connected to the ground plane on the board but it is possible to leave the tab floating. i POWER DISSIPATION SC-88A Ver. B The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following conditions are used in this measurement. Measurement Conditions Item RICOH Evaluation Board Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Double-Sided Board) Board Dimensions 40 mm × 40 mm × 1.6 mm Top Side: Approx. 50% Copper Ratio Bottom Side: Approx. 50% φ 0.5 mm × 44 pcs Through-holes Measurement Result (Ta = 25°C, Tjmax = 125°C) RICOH Evaluation Board Item Power Dissipation 380 mW Thermal Resistance (θja) θja = 263°C/W Thermal Characterization Parameter (ψjt) ψjt = 75°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 600 40 475 400 380 300 40 Power Dissipation (mW) 500 200 100 0 0 25 50 75 85 100 125 Ambient Temperature (°C) 150 Power Dissipation vs. Ambient Temperature Measurement Board Pattern The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C. Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of use and the total years of use must be limited as follows: Total Hours of Use Total Years of Use (4 hours/day) 13,000 hours 9 years i PACKAGE DIMENSIONS SC-88A Ver. A SC-88A Package Dimensions i POWER DISSIPATION SOT-23-5 Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Board Material Mounting on Board (Wind Velocity = 0 m/s) Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square φ 0.3 mm × 7 pcs Copper Ratio Through-holes Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 660 mW Thermal Resistance (θja) θja = 150°C/W Thermal Characterization Parameter (ψjt) ψjt = 51°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 1000 900 830 Power Dissipation (mW) 800 700 600 660 500 400 300 200 100 0 0 25 50 75 85 100 125 Ambient Temperature (°C) 150 Power Dissipation vs. Ambient Temperature Measurement Board Pattern The above graph shows the power dissipation of the package at Tjmax = 125°C and Tjmax = 150°C. Operating the device in the hatched range might have a negative influence on its lifetime. The total hours of use and the total years of use must be limited as follows: Total Hours of Use Total Years of Use (4 hours/day) 13,000 hours 9 years i SOT-23-5 PACKAGE DIMENSIONS Ver. A 2.9±0.2 1.1±0.1 1.9±0.2 0.8±0.1 (0.95) 4 1 2 0～0.1 0.2min. +0.2 1.6-0.1 5 2.8±0.3 (0.95) 3 0.4±0.1 +0.1 0.15-0.05 SOT-23-5 Package Dimensions i 1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to Ricoh sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written consent of Ricoh. 3. 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