RP115L081D-E2

RP115x Series Low On Resistance/ Low Voltage 1 Ch 500 mA/ 1.0 A Alternative LDO No. EA-274-211102 OUTLINE The RP115x is a CMOS-based positive voltage regulator featuring 500 mA/ 1.0 A that provides high ripple rejection, low dropout voltage, high output voltage accuracy, and low supply current. Internally, it consists of a voltage reference unit, an error amplifier, a resistor-net for output voltage setting, a current limit circuit, a thermal shutdown circuit, and a reverse current protection circuit. The RP115x uses a CMOS process for achieving low supply current, low On Resistance for low dropout voltage (Typ. 0.195 V (DFN1216-8, IOUT = 1.0 A, VSET = 1.2 V)) and CE function for long battery life. Excellent ripple rejection, input transient response, and load transient response make the RP115x ideal for the power sources of mobile communication equipment. The RP115x is available in the DFN1216-8 package for space saving and the SOT-89-5 (Output Current: 1.0 A fixed) package for higher power applications. The RP115L (DFN1216-8) can choose the output current limit between 1.0 A or 500 mA by alternating the LCON pin between “H” or “L”. The RP115H (SOT-89-5) can output only 1.0 A since it does not include the LCON pin. FEATURES • Supply Current ·········································· Typ. 110 μA • Supply Current (Standby Mode) ···················· Typ. 0.5 μA • Dropout Voltage ········································· Typ. 0.195 V (DFN1216-8: IOUT = 1.0 A, VSET = 1.2 V) • • • • • • • • • • • • • (1) Typ. 0.235 V (SOT-89-5: IOUT = 1.0 A, VSET = 1.2 V) Ripple Rejection ········································· Typ. 80 dB (f = 1 kHz, VSET ≤ 1.8 V) Typ. 75 dB (f = 1 kHz, VSET > 1.8 V) Output Voltage Accuracy ······························ ±1.0% (VSET ≥ 1.75 V) Output Voltage Temperature Coefficient ·········· Typ. ±30 ppm/ ºC (VSET ≥ 1.75 V) Line Regulation ·········································· Typ. 0.02%/V Package ··················································· DFN1216-8, SOT-89-5 Output Voltage Range ································· 0.7 V to 4.3 V with a 0.1-V step(1) Built-in Short Current Limit Circuit ·················· Typ. 60 mA (DFN1216-8: LCON = "L") Built-in Peak Current Limit Built-in Thermal Shutdown Circuit ·················· Thermal Shutdown Temperature: 165ºC Built-in Constant Slope Circuit for Start-up Built-in Inrush Current Suppression Circuit ······· Typ. 300 mA (DFN1216-8: LCON = "L") Reverse Current Protection Recommended Ceramic Capacitors ··············· 1.0 µF or more For the output voltage with a 0.05-V step, refer to SELECTION GUIDE. 1 RP115x No. EA-274-211102 APPLICATIONS • Portable Communication Equipment • Electrical Appliances such as Cameras, VCRs and Camcorders • Battery-powered Equipment • Home Appliances, Printers, Scanners, Office Equipment Machines SELECTION GUIDE The package type, the set output voltage and the auto-discharge(1) are user-selectable options. Selection Guide Product Name RP115Lxx1∗-E2 RP115Hxx1∗-T1-FE Package Quantity per Reel Pb Free Halogen Free DFN1216-8 5,000 pcs Yes Yes SOT-89-5 1,000 pcs Yes Yes xx: Specify the set output voltage (VSET) within the range of 0.7 V to 4.3 V with a 0.1 V step. Specify VSET with a 0.05 V step as follows: 0.75 V: RP115x071∗5 1.15 V: RP115x111∗5 1.25 V: RP115x121∗5 1.35 V: RP115x131∗5 1.75 V: RP115x171∗5 1.85 V: RP115x181∗5 2.15 V: RP115x211∗5 2.75 V: RP115x271∗5 2.85 V: RP115x281∗5 2.95 V: RP115x291∗5 ∗: Specify the CE pin polarity and the auto-discharge. B: CE = Active-high, auto-discharge not included D: CE = Active-high, auto-discharge included (1) Auto-discharge function quickly lowers the output voltage to 0 V by releasing the electrical charge in the external capacitor when the chip enable signal is switched from the active mode to the standby mode. 2 RP115x No. EA-274-211102 BLOCK DIAGRAMS VDD VOUT - Vref VDD VOUT - VFB + Current Limit Thermal Shutdown Current Limit Thermal Shutdown Reverce Detector GND CE Reverce Detector LCON RP115Lxx1B Block Diagram VDD RP115Lxx1D Block Diagram VOUT - + VDD CE RP115Hxx1B(1) Block Diagram (1) The VOUT - VFB + Vref VFB Current Limit Thermal Shutdown Current Limit Thermal Shutdown Reverce Detector GND CE LCON Vref VFB + Vref GND Reverce Detector CE GND RP115Hxx1D Block Diagram RP115H does not have the LCON pin, so the output current limit is fixed at 1 A. 3 RP115x No. EA-274-211102 PIN DESCRIPTION Bottom View Top View 8 7 6 5 5 6 7 8 5 3 2 1 1 4 ∗ 1 2 3 4 4 DFN1216-8 Pin Configuration 2 3 SOT-89-5 Pin Configuration RP115L: DFN1216-8 Pin No Symbol 1 VOUT(1) Pin Description 2 VOUT(1) 3 LCON Output Current Limit Alternate Pin 4 VFB(1) Feedback Pin 5 GND Ground Pin 6 CE 7 VDD(2) Input Pin 8 VDD(2) Input Pin Output Pin Output Pin Chip Enable Pin * The tab on the bottom of the package shown by blue circle is a substrate potential (GND). It is recommended that this tab be connected to the ground plane on the board but it is possible to leave the tab floating. RP115H( 3): SOT-89-5 Pin No Symbol Pin Description 1 VFB(1) Feedback Pin 2 GND Ground Pin 3 CE 4 VDD 5 VOUT(1) Chip Enable Pin Input Pin Output Pin The VOUT pin and the VFB pin must be wired together when mounting on the board. The VDD pins must be wired together when mounting on the board. (3) The output current limit is fixed at 1 A. (1) (2) 4 RP115x No. EA-274-211102 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings Symbol Parameter Rating Unit 6.0 V VIN Input Voltage VCE Input Voltage (CE Pin) −0.3 to 6.0 V VLCON Input Voltage (LCON Pin) −0.3 to 6.0 V VOUT Output Voltage −0.3 to 6.0 V DFN1216-8 JEDEC STD. 51 1700 SOT-89-5 JEDEC STD. 51 2600 PD Power Dissipation(1) Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C mW ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Item Voltage(2) VIN Input Ta Operating Temperature Range Rating Unit 1.4 to 5.25 V −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) Refer (2) to POWER DISSIPATION for detailed information. In case of operating the device beyond 5.25 V, do not exceed 5.5 V with 500 total operating hours. 5 RP115x No. EA-274-211102 ELECTRICAL CHARACTERISTICS VIN = VSET(1) + 1.0 V, IOUT = 1 mA, CIN = COUT = 1.0 μF, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at −40ºC ≤ Ta ≤ 85ºC. RP115x Electrical Characteristics Symbol Item Conditions Ta = 25°C VOUT Output Current Limit ∆VOUT /∆IOUT Load Regulation VDIF Dropout Voltage ISS VIN = VSET + 0.5 V Typ. VSET ≥ 1.75 V x0.99 x1.01 V VSET < 1.75 V -18 +18 mV x1.015 V VSET ≥ 1.75 V Output Voltage −40°C ≤ Ta ≤ 85°C ILIM Min. (Ta = 25°C) Max. Unit x0.985 VSET < 1.75 V Refer to Set Output Voltagespecific Output Voltage Characteristics. LCON = ”L” 500 mA 1.0 A LCON = ”H”(2) VIN = VSET + 0.5 V 1 mA ≤ IOUT ≤ 500 mA LCON = ”L” VIN = VSET + 0.5 V 1 mA ≤ IOUT ≤ 1.0 A LCON = ”H”(2) 1 20 40 mV Refer to Set Output Voltage-specific Dropout Voltage Characteristics. Supply Current IOUT = 0 mA 110 160 μA Istandby Standby Current VCE = 0 V 0.5 3.0 μA ∆VOUT /∆VIN Line Regulation VSET + 0.5 V ≤ VIN ≤ 5.25 V (VIN ≥ 1.4 V) 0.02 0.10 %/V Ripple Rejection f = 1 kHz, Ripple 0.2 Vp-p, VIN = VSET + 1.0 V, IOUT = 30 mA Output Voltage Temperature Coefficient −40°C ≤ Ta ≤ 85°C ISC Short Current Limit VOUT = 0 V(3) ICE CE Pull-down Current 0.05 VCEH CE Input Voltage “H” 1.0 VCEL CE Input Voltage “L” ILCON LCON Pull-down Current (RP115L only) RR ∆VOUT /∆Ta VSET > 1.8 V 75 dB VSET ≤ 1.8 V 80 dB VSET ≥ 1.75 V ±30 VSET < 1.75 V ±100 ppm /ºC LCON = ”L” LCON = 60 ”H”(2) mA 110 0.05 0.3 0.6 μA V 0.3 0.4 V 0.6 µA VSET: Set Output Voltage The electrical characteristics of the RP115H is as same as when LCON = ”H”. (3) The short current limit is the value when the VOUT pin is short circuited to GND after the device is completely started up. The inrush current flows when the VOUT pin is short circuited to GND while the VOUT pin is short-circuited to GND before the device is completely started up. (1) (2) 6 RP115x No. EA-274-211102 ELECTRICAL CHARACTERISTICS (continued) VIN = VSET(1) + 1.0 V, IOUT = 1 mA, CIN = COUT = 1.0 μF, unless otherwise noted. The specifications surrounded by are guaranteed by design engineering at -40ºC ≤ Ta ≤ 85ºC. RP115x Electrical Characteristics Symbol VLCONH LCON Input Voltage “H” (RP115L only) VLCONL LCON Input Voltage “L” (RP115L only) TTSD TTSR IREV VREV_DET( 2) VREV_REL( 4) (Ta = 25ºC) Item Thermal Shutdown Temeprature Threshold Reverse Current Detection Offset Voltage in Reverse Current Protection Mode(3) Release Offset Voltage in Reverse Current Protection Mode(3) Conditions Typ. Max. Unit V 1.0 0.4 V Tj, Rising 165 ºC Tj, Falling 110 ºC VOUT = VSET + 1.0 V 0 ≤ VIN ≤ VOUT VSET ≥ 1.75 V VSET < 1.75 V 7.5 20 VOUT ≥ 0.7 V, 0 ≤ VIN ≤ 5.25 V 30 BW = 10 Hz to 100 kHz RLOW Auto-discharge Nch Tr. Onresistance (RP115xx1D only) VIN = 4.0 V, VCE = 0 V IRUSH Inrush Current Limit CC mode(5) VSET ≥ 1.75 V VSET < 1.75 V LCON = ”L” LCON = ”H”(6) µA 10 VOUT ≥ 0.7 V, 0 ≤ VIN ≤ 5.25 V Output Noise en Min. mV 50 mV 17 x VSET 35 x VSET µVrms 60 Ω 300 mA 500 All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25ºC) except Output Noise, Ripple Rejection, and Output Voltage Temperature Coefficient. VSET: Set Output Voltage VREV_DET = VIN − VOUT (3) The guaranteed operating voltage range of the reverse current protection circuit is V OUT ≥ 0.7 V. When VIN = VOUT = 0 V, the reverse current protection mode is constantly active. (4) V REV_REL = VIN − VOUT (5) For detailed information, refer to Start-up Characteristics Using Constant Slope Circuit. (6) The electrical characteristics of the RP115H is as same as when LCON = ”H”. (1) (2) 7 RP115x No. EA-274-211102 Set Output Voltage-specific Output Voltage Characteristics Set Output Voltage VSET (V) Output Voltage VOUT (mV) Min. Max. 0.7 −33 +28 0.8 −35 +29 0.9 −37 +30 1.0 −39 +31 1.1 −41 +33 1.2 −43 +34 1.3 −45 +35 1.4 −47 +36 1.5 −49 +38 1.6 −51 +39 1.7 −53 +40 Set Output Voltage-specific Dropout Voltage Characteristics RP115L: DFN1216-8 (Ta = 25°C) Dropout Voltage VDIF (V) Set Output Voltage VSET (V) RP115L IOUT = 500 mA RP115H IOUT = 1000 mA IOUT = 1000 mA Typ. Max. Typ. Max. Typ. Max. 0.7 ≤ VSET < 1.1 * * * * * * 1.1 ≤ VSET < 1.2 * * * 0.300 * 0.350 1.2 ≤ VSET < 1.3 * * 0.195 0.275 0.235 0.330 1.3 ≤ VSET < 1.5 0.095 0.135 0.185 0.260 0.225 0.320 1.5 ≤ VSET < 1.75 0.085 0.120 0.165 0.235 0.205 0.295 1.75 ≤ VSET < 2.6 0.075 0.110 0.150 0.215 0.190 0.270 2.6 ≤ VSET < 3.3 0.065 0.090 0.130 0.180 0.170 0.240 3.3 ≤ VSET ≤ 4.3 0.060 0.085 0.125 0.170 0.165 0.225 If the dropout voltage falls below the release offset value of reverse current protection mode (VREV_REL), the reverse current protection circuit may repeat the detection and release operations. Please refer to Reverse Current Protection Circuit. * Input voltage should be equal or more than the minimum operating voltage (1.4 V). 8 RP115x No. EA-274-211102 THEORY OF OPERATION Reverse Current Protection Circuit The RP115x includes a Reverse Current Protection Circuit, which stops the reverse current from VOUT pin to VDD pin or to GND pin when VOUT becomes higher than VIN. Usually, the LDO using Pch output transistor contains a parasitic diode between VDD pin and VOUT pin. Therefore, if VOUT is higher than VIN, the parasitic diode becomes forward direction. As a result, the current flows from VOUT pin to VDD pin. The RP115x switches the mode to the reverse current protection mode before VIN becomes lower than VOUT by connecting the parasitic diode of Pch output transistor to the backward direction, and connecting the gate to VOUT pin. As a result, the Pch output transistor is turned off. However, from VOUT pin to GND pin, via the internal divider resistors, very small current IREV flows. Switching to either the normal mode or to the reverse current protection mode is determined by the magnitude of VIN voltage and VOUT voltage. For the stable operation, offset and hysteresis are set as the threshold. The detector threshold is set to VREV_DET and the released voltage is set to VREV_REL. Therefore, the minimum dropout voltage under the small load current condition is restricted by the value of VREV_REL. Following figures show the diagrams of each mode, and the load characteristics of each mode. When giving the VOUT pin a constant-voltage and decreasing the VIN voltage, the dropout voltage will become lower than VREV_DET. As a result, the reverse current protection starts to function to stop the load current. By increasing the dropout voltage higher than VREV_REL, the protection mode will be released to let the load current to flow. If the dropout voltage to be used is lower than VREV_REL, the detection and the release may be repeated. The operating voltage guaranteed level of the reverse current protection circuit is for VOUT ≥ 0.7V. If VIN=0V, the reverse current protection mode becomes always active. VDD Reverse Detector VDD Reverse Detector IOUT VOUT VOUT + + Vref Vref CE GND Normal Operation Mode IREV GND CE Reverse Current Protection Mode 9 RP115x Output/ Reverse Current IOUT/ IREV Input/ Output Voltage VIN/ VOUT [V] No. EA-274-211102 VIN VREV_REL VREV_DET VOUT IOUT Normal Mode Reverse Current Protection Mode Normal Mode 0 IREV Detection/ Release Timing of Reverse Current Protection Start-up Characteristics Using Constant Slope Circuit Constant slope circuit is included in the RP115x to prevent the overshoot of the output voltage. The start-up time (tON) is 100 µs (Typ.). If inrush current increases due to the large capacitance of COUT, the operation mode will be shifted from Constant Slope (CS) mode to Constant Current (CC) mode. The CC mode maintains a constant level of inrush current. In the CC mode, tON varies according to the size of COUT and the amount of load current. Start-up Time and Inrush Current Estimations Start-up time and inrush current in the CS mode and the CC mode can be estimated as follows. [CS Mode] Start-up Time: tON = 100 μs (Typ.) Inrush Current: IRUSH = COUT ∙ VSET / tON + IOUT(1) Note: If the result of the above calculation is more than the following values, the operation mode will be shifted from the CS mode to the CC mode. LCON = ”L” ········································································· 300 mA (Typ.) LCON = ”H” ········································································· 500 mA (Typ.) [CC Mode] Start-up Time: tON = COUT ∙ VSET / ICO(2) Inrush Current: IRUSH LCON = ”L” ·········································································· 300 mA (Typ.) LCON = ”H” ·········································································· 500 mA (Typ.) (1) (2) IOUT: When RLOAD is connected to load, IOUT can be calculated by RLOAD = VSET / IOUT. ICO: ICO is a charge current of COUT and can be calculated roughly by IRUSH ≈ ICO + IOUT. 10 RP115x No. EA-274-211102 IRUSH VDD VOUT VIN CIN LCON Control CE Control RP115L LCON VFB ICO*20 IOUT*19 COUT RLOAD CE GND Circuit Example VIN VIN ≥1.4V CE CS Mode VOUT tON = 100µs (Typ.) VSET 60µs (Typ.) IOUT ≤ 500mA (LCON=”L”) ≤ 1.0A (LCON=”H”) IRUSH = COUT • VSET / tON + IOUT IOUT IRUSH CC Mode VOUT tON = COUT • VSET / ICO VSET 60µs (Typ.) IOUT ≤ 150mA (LCON=”L”) ≤ 350mA (LCON=”H”) IRUSH IOUT ≤ 500mA (LCON=”L”) ≤ 1.0A (LCON=”H”) IRUSH = 300mA (LCON=”L”) 500mA (LCON=”H”) IOUT Timing Chart of Start-up Operation 11 RP115x No. EA-274-211102 Precautions before Use During the start-up, the inrush current limit circuit is in operation; therefore, the load current (IOUT) should be drawn after the output voltage (VOUT) reached the preset value (Best timing: tON + 60 µs or more). If the load current is drawn during the start-up, it should be within the following values. LCON = ”L” ··························································· IOUT ≤ 150 mA LCON = ”H” ··························································· IOUT ≤ 350 mA In the CC mode, IRUSH is limited until VOUT reaches the preset value. IRUSH ≈ ICO + IOUT is true; therefore, if large IOUT is drawn during the start-up, the charge current (ICO) of COUT decreases and tON becomes longer. Please refer to Start-up Time and Inrush Current Estimations. In order to control the start-up operation by using the CS mode or CC mode, input “H” into the CE pin while VIN ≥ 1.4 V. If “H” is input into the CE pin while VIN is less than the minimum operating voltage, the operation may not be controlled by the CS mode or CC mode. When starting up the device while the short circuit is occurring between the VOUT pin and GND, the short current protection circuit does not control the current but the current limit circuit does. When there’s excessive heat generation in the device, thermal shutdown circuit shuts down the circuitry before the device overheats dangerously. LCON Pin (RP115L only) By alternating the LCON pin between “H” or “L”, the RP115L can choose the output current limit either 1.0 A or 500 mA. Please note that during start-up (tON + 60 µs (Typ.)), do not change the logic of the LCON pin. LCON = ”L” ·········································· 500 mA LCON = ”H” ·········································· 1.0 A Application Example Even when using the RP115L with LCON = ”H”, IRUSH in the CC mode can be reduced from 500 mA (Typ.) to 300 mA (Typ.) by starting up the IC with LCON = ”L”. Please refer to Start-up Characteristics Using Constant Slope Circuit. 12 RP115x No. EA-274-211102 APPLICATION INFORMATION VDD VIN VOUT VOUT(2) RP115x CIN LCON(1) VFB(2) COUT LCON Control CE CE Control GND RP115x Typical Application Circuit 1 External Components Symbol Description CIN 1.0 μF, Ceramic Capacitor, GRM155R61A105KE15 (MURATA) 1.0 µF, Ceramic Capacitor, GRM155R61A105KE15 (MURATA) COUT 2.2 µF, Ceramic Capacitor, GRM155R61A225KE95 (MURATA) Precautions When Selecting External Components • In this device, phase compensation is provided to secure stable operation even when the load current is varied. For this purpose, use a 1.0-µF or more output capacitor (COUT). • A ceramic capacitor has different temperature characteristics and bias dependencies depending on the size, manufacturer or part number of a capacitor. Careful evaluation is required. When using a 1.75-V product under the environment of −20°C or lower, choose a 2.2-µF or more COUT. • In case of using a tantalum-type capacitor with a large ESR (Equivalent Series Resistance), the output might become unstable. Careful evaluation on frequency characteristics is required. (1) (2) The LCON pin is included in the RP115L (DFN2020-8B) only. Connect the VOUT and VFB pins together. 13 RP115x No. EA-274-211102 Equivalent Series Resistance (ESR) vs. Output Current Ceramic type output capacitor is recommended for the RP115x but any capacitor with low ESR can be used. The graphs below show the relation between IOUT and ESR (noise level: average 40 μV or less). Measurement Conditions  Noise Frequency Band Width: 10 Hz to 2 MHz  Operating Temperature Range: −40°C to +85°C  Hatched Area: Output noise level is average 40μV or less.  CIN, COUT: 1.0 μF or more RP115x071x 100 V IN = 4.3V to 5.25V 100 Ta = -40°C to 85°C Ta = -40°C to 85°C 10 ESR [Ω] 10 ESR [Ω] RP115x431x V IN = 1.4V to 5.25V 1 0.1 1 0.1 0.01 0.01 0 200 400 600 800 Output Current IOUT [mA] 1000 0 200 400 600 800 Output Current IOUT [mA] 1000 TECHNICAL NOTES The performance of a power source circuit using this device is highly dependent on a peripheral circuit. A peripheral component or the device mounted on PCB should not exceed its rated voltage, rated current or rated power. When designing a peripheral circuit, please be fully aware of the following points.  Place the external components as close as possible to the device with shortest-distance wirings. Connect an input capacitor (CIN) between the VIN and GND pins with shortest-distance wiring.  Ensure the VDD and GND wirings are sufficiently robust. If the impedance of wiring between the VDD and GND pins is high, it may cause noise pickup or unstable operation.  Connect an output capacitor (COUT) between the VOUT and GND pins with shortest-distance wiring. 14 RP115x No. EA-274-211102 TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 1) Output Voltage vs. Input Voltage (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF, Ta = 25°C) RP115x171x 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Output Voltage V OUT[V] Output Voltage V OUT[V] RP115x071x Iout = 1mA Iout = 30mA Iout = 50mA 0 1 2 3 4 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 5 Iout = 1mA Iout = 30mA Iout = 50mA 0 1 Input Voltage V IN[V] 1 2 3 Output Voltage V OUT[V] Output Voltage V OUT[V] 4 5 RP115x431x Iout = 1mA Iout = 30mA Iout = 50mA 0 3 Input Voltage V IN[V] RP115x181x 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 2 4 Input Voltage V IN[V] 5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 Iout = 1mA Iout = 30mA Iout = 50mA 0 1 2 3 4 5 Input Voltage V IN[V] 15 RP115x No. EA-274-211102 2) Supply Current vs. Input Voltage (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF, Ta = 25°C) RP115x171x 140 140 120 120 Supply Current ISS[μA] Supply Current ISS[μA] RP115x071x 100 80 60 40 20 0 100 80 60 40 20 0 0 1 2 3 4 5 0 1 Input Voltage V IN[V] 3 4 5 4 5 Input Voltage V IN[V] RP115x181x RP115x431x 140 140 120 120 Supply Current ISS[μA] Supply Current ISS[μA] 2 100 80 60 40 20 0 100 80 60 40 20 0 0 1 2 3 Input Voltage V IN[V] 4 5 0 1 2 3 Input Voltage V IN[V] Short Current Limit vs. Temperature and Current Limit vs. Temperature The RP115x contains a peak current limit circuit which protect the regulator from damage by overcurrent if the output pin (VOUT) and the ground pin (GND) are shorted. The short-circuiting causes the overheating of the device which leads a thermal shutdown circuit to operate. If the peak current limit circuit and the thermal shutdown circuit work at the same time, fold-back type dropping characteristics cannot be measured. As for the short-circuit current and the peak current limit circuit, please refer to 3) Short Current Limit vs. Temperature and 4) Current Limit vs. Temperature. 16 RP115x No. EA-274-211102 3) Short Current Limit vs. Temperature V IN = 2.0V V OUT = 0V LCON = "L" RP115x071x 120 Short Current Limit [mA] Short Current Limit [mA] 70 65 60 55 V IN = 2.0V V OUT = 0V LCON = "H" RP115x071x 50 115 110 105 100 95 90 -40 -25 0 25 50 Temperature Ta [°C] 75 85 -40 -25 25 50 0 Temperature Ta [°C] 75 85 4) Peak Current Limit vs. Temperature V IN = 1.2V LCON = "L" 900 1500 850 1450 800 750 700 650 600 -40 -25 0 25 50 Temperature Ta [°C] 75 85 V IN = 1.2V LCON = "H" RP115x071x Current Limit [mA] Current Limit [mA] RP115x071x 1400 1350 1300 1250 1200 -40 -25 0 25 50 75 85 Temperature Ta [°C] 17 RP115x No. EA-274-211102 5) Output Voltage vs. Temperature (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF, IOUT = 1 mA) RP115x071x RP115x171x V IN = 1.7V 0.74 1.74 1.73 Output Voltage VOUT[V] Output Voltage VOUT[V] 0.73 0.72 0.71 0.7 0.69 0.68 0.67 0.66 1.72 1.71 1.7 1.69 1.68 1.67 1.66 -40 -25 0 25 50 75 85 -40 -25 Temperature Ta [°C] RP115x181x 1.84 0 25 50 75 85 Temperature Ta [°C] RP115x431x V IN = 2.8V 4.34 V IN = 5.25V 4.33 Output Voltage VOUT[V] 1.83 Output Voltage VOUT[V] V IN = 2.7V 1.82 1.81 1.8 1.79 1.78 1.77 1.76 4.32 4.31 4.3 4.29 4.28 4.27 4.26 -40 -25 50 0 25 Temperature Ta [°C] 75 85 -40 -25 0 25 50 Temperature Ta [°C] 75 85 18 RP115x No. EA-274-211102 6) Supply Current vs. Temperature (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF, IOUT = 0 mA) RP115x071x 120 110 100 90 80 70 120 110 100 90 80 70 -40 -25 0 25 50 Temperature Ta [°C] RP115x181x 130 75 85 -40 -25 120 110 100 90 80 25 50 0 Temperature Ta [°C] RP115x431x V IN = 2.8V 130 Supply Current ISS[μA] Supply Current ISS[μA] V IN = 2.7V 130 Supply Current ISS[μA] Supply Current ISS[μA] 130 RP115x171x V IN = 1.7V 75 85 V IN = 5.25V 120 110 100 90 80 70 70 -40 -25 0 25 50 Temperature Ta [°C] 75 85 -40 -25 0 25 50 Temperature Ta [°C] 75 85 19 RP115x No. EA-274-211102 7) Dropout Voltage vs. Output Current (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF) RP115L171x RP115H171x 250 Dropout Voltage VDIF [mV] Dropout Voltage VDIF [mV] 250 -40°C 25°C 85°C 200 150 100 50 0 200 400 600 800 100 50 1000 0 600 800 RP115L181x RP115H181x Dropout Voltage VDIF [mV] -40°C 25°C 85°C 150 400 Output Current IOUT [mA] 250 200 200 Output Current IOUT [mA] 250 Dropout Voltage VDIF [mV] 150 0 0 100 50 0 1000 -40°C 25°C 85°C 200 150 100 50 0 0 250 200 400 600 800 1000 200 400 600 800 Output Current IOUT [mA] RP115L431x RP115H431x 250 -40°C 25°C 85°C 200 0 Output Current IOUT [mA] Dropout Voltage VDIF [mV] Dropout Voltage VDIF [mV] -40°C 25°C 85°C 200 150 100 50 1000 -40°C 25°C 85°C 200 150 100 50 0 0 0 200 400 600 800 Output Current IOUT [mA] 1000 0 200 400 600 800 1000 Output Current IOUT [mA] 20 RP115x No. EA-274-211102 8) Dropout Voltage vs. Set Output Voltage (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF, Ta = 25°C) 9) Dropout Voltage vs. Temperature (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF) Dropout Voltage VDIF [mV] 500 400 300 200 100 0 -40 -25 0 25 50 300 250 200 150 100 50 0 -40 -25 75 85 Dropout Voltage VDIF [mV] 250 200 150 100 50 0 -40 -25 0 25 50 Temperature Ta [°C] 25 50 75 85 RP115L431x 300 Dropout Voltage VDIF [mV] 30mA 100mA 300mA 500mA 1000mA 300 0 75 85 Temperature Ta [°C] Temperature Ta [°C] RP115L181x 30mA 100mA 300mA 500mA 1000mA RP115L171x Dropout Voltage VDIF [mV] 30mA 100mA 300mA 500mA 1000mA RP115L071x 250 30mA 100mA 300mA 500mA 1000mA 200 150 100 50 0 -40 -25 0 25 50 Temperature Ta [°C] 75 85 21 RP115x No. EA-274-211102 400 300 200 100 0 -40 -25 0 25 50 Temperature Ta [°C] 30mA 100mA 300mA 500mA 1000mA Dropout Voltage VDIF [mV] 250 200 150 100 50 0 25 200 150 100 50 0 0 -40 -25 25 50 75 85 Temperature Ta [°C] 300 0 250 75 85 RP115H181x -40 -25 300 50 30mA 100mA 300mA 500mA 1000mA RP115H431x 300 Dropout Voltage VDIF [mV] Dropout Voltage VDIF [mV] 500 30mA 100mA 300mA 500mA 1000mA RP115H171x Dropout Voltage VDIF [mV] 30mA 100mA 300mA 500mA 1000mA RP115H071x 250 200 150 100 75 85 50 0 -40 -25 Temperature Ta [°C] 0 25 50 75 85 Temperature Ta [°C] 10) Ripple Rejection vs. Input Voltage (CIN = none, COUT = Ceramic 1.0 μF, Ripple = 0.2 Vp-p, Ta = 25°C) 100 90 80 70 60 50 40 30 20 10 0 0.1kHz 1kHz 10kHz 100kHz 0 1 2 3 RP115x071x IOUT=1mA Ripple Rejection RR(dB) Ripple Rejection RR(dB) RP115x071x 4 Input Voltage VIN(V) 5 100 90 80 70 60 50 40 30 20 10 0 IOUT=30mA 0.1kHz 1kHz 10kHz 100kHz 0 1 2 3 4 5 Input Voltage VIN(V) 22 RP115x RP115x171x 70 60 50 40 30 0.1kHz 1kHz 10kHz 100kHz 20 10 0 1 Ripple Rejection RR(dB) IOUT=1mA 2 3 4 Input Voltage VIN(V) RP115x181x 100 90 80 70 60 50 40 30 20 10 0 2 3 2 1 IOUT=1mA 0.1kHz 1kHz 10kHz 100kHz 4 4.2 4.4 4.6 4.8 Input Voltage VIN(V) IOUT=30mA 2 3 4 5 Input Voltage VIN(V) 5 5.2 Ripple Rejection RR(dB) Ripple Rejection RR(dB) RP115x431x 5 0.1kHz 1kHz 10kHz 100kHz Input Voltage VIN(V) 100 90 80 70 60 50 40 30 20 10 0 3 4 Input Voltage VIN(V) RP115x181x 100 90 80 70 60 50 40 30 20 10 0 5 IOUT=30mA 0.1kHz 1kHz 10kHz 100kHz 1 IOUT=1mA 4 RP115x171x 100 90 80 70 60 50 40 30 20 10 0 5 0.1kHz 1kHz 10kHz 100kHz 1 Ripple Rejection RR(dB) 100 90 80 Ripple Rejection RR(dB) Ripple Rejection RR(dB) No. EA-274-211102 RP115x431x 100 90 80 70 60 50 40 30 20 10 0 IOUT=30mA 0.1kHz 1kHz 10kHz 100kHz 4 4.2 4.4 4.6 4.8 5 5.2 Input Voltage VIN(V) 23 RP115x No. EA-274-211102 11) Ripple Rejection vs. Frequency (CIN = none, COUT = Ceramic 1.0 μF, Ripple = 0.2 Vp-p, Ta = 25°C) RP115x071x 100 80 60 40 1mA 30mA 150mA 20 0 0.1 1 100 80 60 40 1mA 30mA 150mA 20 0 10 100 1000 0.1 1 Frequency f [kHz] 80 60 1mA 30mA 150mA 20 0 0.1 1 100 1000 1000 VIN = 5.25V 120 100 80 60 40 1mA 30mA 150mA 20 0 10 100 RP115x431x VIN = 2.8V 100 40 10 Frequency f [kHz] Ripple Rejection RR [dB] Ripple Rejection RR [dB] RP115x181x 120 VIN = 2.7V 120 Ripple Rejection RR [dB] Ripple Rejection RR [dB] RP115x171x VIN = 1.7V 120 0.1 Frequency f [kHz] 1 10 100 1000 Frequency f [kHz] Output Voltage -20 -10 0 10 20 30 40 50 60 70 80 Time t [μs] Input Voltage 2.7V 3.7V 1.73 1.72 1.71 1.7 1.69 5 4 3 2 1 0 Input Voltage VIN [V] 0.73 0.72 0.71 0.7 0.69 0.68 Input Voltage 1.7V 2.7V 5 4 3 2 1 0 RP115x171x Output Voltage VOUT [V] Output Voltage V OUT [V] RP115x071x Input Voltage VIN [V] 12) Line Transient Response CIN = none, COUT = Ceramic 1.0 μF, IOUT = 30 mA, tr = tf = 5 μs, Ta = 25°C) Output Voltage -20 -10 0 10 20 30 40 50 60 70 80 Time t [μs] 24 RP115x No. EA-274-211102 5 4 3 2 1 0 Output Voltage VOUT [V] Input Voltage 2.8V 3.8V 1.82 1.81 1.8 1.79 1.78 Input Voltage VIN [V] RP115x181x Output Voltage -20 -10 0 10 20 30 40 50 60 70 80 Time t [μs] VIN = 1.7V Output Voltage VOUT [V] 50 Load Current 50mA 100mA 0.71 0 0.7 0.69 Output Voltage 0.68 -5 0 5 10 15 20 25 30 35 40 Output Voltage VOUT [V] 100 Load Current 1mA 250mA 0.8 0.75 0.7 0.65 0.6 0.55 Output Voltage -20 0 0.8 0.75 0.7 0.65 0.6 0.55 VIN = 1.7V 600 400 200 0 Output Voltage -20 0 20 40 60 80 100 120 140 Time t [μs] RP115x171x Output Voltage VOUT [V] Output Voltage VOUT [V] Load Current 1mA 500mA 20 40 60 80 100 120 140 Time t [μs] Output Current I OUT [mA] Time t [μs] RP115x071x 300 200 100 0 Output Current I OUT [mA] RP115x071x VIN = 1.7V 150 VIN = 2.7V Load Current 50mA 100mA 1.72 1.71 1.7 1.69 1.68 1.67 150 100 50 0 Output Current I OUT [mA] RP115x071x Output Current I OUT [mA] 13) Load Transient Response (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF, tr = tf = 0.5 μs, Ta = 25°C) Output Voltage -5 0 5 10 15 20 25 30 35 40 Time t [μs] 25 RP115x Output Voltage -20 0 20 40 60 80 100 120 140 Load Current 1mA 500mA 1.8 1.75 1.7 1.65 1.6 1.55 Output Voltage -20 0 20 40 60 80 100 120 140 Time t [μs] Load Current 50mA 100mA 1.81 1.8 1.79 1.78 1.77 1.76 150 100 50 0 Output Voltage -5 0 5 10 15 20 25 30 35 40 RP115x181x VIN = 2.8V Output Voltage V OUT [V] Output Voltage V OUT [V] VIN = 2.8V Output Current I OUT [mA] Time t [μs] RP115x181x Load Current 1mA 250mA 1.85 1.8 1.75 1.7 1.65 -20 0 20 40 60 80 100 120 140 time [μs] 600 400 200 0 RP115x431x Output Voltage V OUT [V] 0 Output Current I OUT [mA] Output Voltage V OUT [V] VIN = 2.8V Output Voltage -20 20 40 60 80 100 120 140 time [μs] Load Current 1mA 500mA 1.85 1.8 1.75 1.7 1.65 300 200 100 0 Output Voltage time [μs] RP115x181x 600 400 200 0 Output Current I OUT [mA] 1.8 1.75 1.7 1.65 1.6 1.55 VIN = 2.7V Output Current I OUT [mA] Load Current 1mA 250mA 300 200 100 0 VIN = 5.25V Load Current 50mA 100mA 4.32 4.31 4.3 4.29 4.28 150 100 50 0 Output Current I OUT [mA] Output Voltage VOUT [V] VIN = 2.7V RP115x171x Output Voltage VOUT [V] RP115x171x Output Current I OUT [mA] No. EA-274-211102 Output Voltage -5 0 5 10 15 20 25 30 35 40 time [μs] 26 RP115x Load Current 1mA 250mA 4.4 4.35 4.3 4.25 4.2 4.15 300 200 100 0 Output Voltage -20 0 20 40 60 80 100 120 140 RP115x431x VIN = 5.25V Output Voltage V OUT [V] Output Voltage V OUT [V] VIN = 5.25V Output Current I OUT [mA] RP115x431x 600 400 200 0 Load Current 1mA 500mA 4.4 4.35 4.3 4.25 4.2 4.15 Output Current I OUT [mA] No. EA-274-211102 Output Voltage -20 0 20 40 60 80 100 120 140 time [μs] time [μs] 0 Iout = 0mA Iout = 30mA Iout = 150mA 1 0.5 1 Output Voltage 0 -20 0 50 100 150 180 Time t [μs] VIN = 2.8V Output Voltage VOUT [V] 4 2 CE Input Voltage 0V => 2.8V 2 0 Output Voltage Iout = 0mA Iout = 30mA Iout = 150mA 1 0 -20 0 50 100 Time t [μs] 4 CE Input Voltage 0V => 2.7V 2 0 2 1 Output Voltage Iout = 0mA Iout = 30mA Iout = 150mA 0 -20 0 50 100 150 180 Time t [μs] 150 180 CE Input Voltage VCE[V] RP115x181x VIN = 2.7V RP115x431x VIN = 5.25V 4 CE Input Voltage 0V => 5.25V 4 8 0 CE Input Voltage VCE[V] Output Voltage VOUT [V] CE Input Voltage 0V => 1.7V RP115x071x CE Input Voltage VCE [V] 2 Output Voltage VOUT [V] VIN = 1.7V Output Voltage VOUT [V] RP115x071x CE Input Voltage VCE [V] 14) Turn-on Waveform by CE Pin Signal (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF, Ta = 25°C) Output Voltage Iout = 0mA Iout = 30mA Iout = 150mA 2 0 -20 0 50 100 Time t [μs] 150 180 27 RP115x No. EA-274-211102 VIN = 1.7V Output Voltage 0.5 Iout = 0mA Iout = 30mA Iout = 150mA 2 Iout = 0mA Iout = 30mA Iout = 150mA 0 100 200 300 Time t [μs] 400450 VIN = 2.8V Iout = 0mA Iout = 30mA Iout = 150mA 0 200 300 Time t [μs] 400 450 CE Input Voltage 5.25V => 0V 2 Output Voltage 100 RP115x431D VIN = 5.25V 4 0 1 -50 0 CE Input Voltage VCE[V] -50 0 CE Input Voltage 2.8V => 0V Output Voltage VOUT [V] Output Voltage 1 0 RP115x181D 2 2 Output Voltage VOUT [V] 1 4 0 Output Voltage VOUT [V] 0 VIN = 2.7V CE Input Voltage 2.7V => 0V 1 CE Input Voltage VCE[V] Output Voltage VOUT [V] CE Input Voltage 1.7V => 0V RP115x171D 2 CE Input Voltage VCE[V] RP115x071D CE Input Voltage VCE[V] 15) Turn-off Waveform by CE Pin Signal (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF, Ta = 25°C) 8 4 0 Output Voltage 4 Iout = 0mA Iout = 30mA Iout = 150mA 2 0 -50 0 100 200 300 Time t [μs] 400 450 -50 0 100 200 300 Time t [μs] 400 450 28 RP115x No. EA-274-211102 -50 3 2.5 2 1.5 1 0.5 0 0 50 100 Time t [μs] 150 200 Inrush Current Irush [mA] RP115L171x (LCON="L", CS mode) VIN = 2.7V 3 2.5 CE Input Voltage 2 0V => 2.7V 1.5 Output Voltage 1 0.5 Cout = 1.0μF Cout = 2.2μF 400 0 Cout = 4.7μF Cout = 10μF 300 200 Inrush Current 100 0 RP115L181x (LCON="L", CS mode) VIN = 2.8V CE Input Voltage 0V => 2.8V Output Voltage Cout = 1.0μF Cout = 2.2μF Cout = 4.7μF Cout = 10μF 400 300 200 Inrush Current 100 0 -50 0 50 100 Time t [μs] 150 200 3 2.5 2 1.5 1 0.5 0 0 50 100 150 200 250 Time t [μs] RP115L171x (LCON="L", CC mode) VIN = 2.7V CE Input Voltage 0V => 2.7V Output Voltage Cout = 22μF Inrush Current -50 0 50 400 300 200 100 0 100 150 200 250 Time t [μs] 3 2.5 2 1.5 1 0.5 0 Inrush Current Irush [mA] [V] / CE Input Voltage V CE[V] OUT -50 Inrush Current Irush [mA] 200 400 300 Inrush Current 200 100 0 RP115L181x (LCON="L", CC mode) VIN = 2.8V CE Input Voltage 0V => 2.8V Output Voltage Cout = 22μF Inrush Current -50 0 400 300 200 100 0 50 100 150 200 250 Time t [μs] Inrush Current Irush [mA] 150 Inrush Current Irush [mA] Output Voltage V 50 100 Time t [μs] Output Voltage Cout = 47μF Output Voltage V 0 [V] / CE Input Voltage V CE[V] -50 CE Input Voltage 0V => 1.7V OUT 400 300 200 Inrush Current100 0 2 1.5 1 0.5 0 Output Voltage V Cout = 1.0μF Cout = 2.2μF Cout = 4.7μF Cout = 10μF Cout = 22μF Inrush Current Irush [mA] Output Voltage [V] / CE Input Voltage V CE[V] CE Input Voltage 0V => 1.7V RP115L071x (LCON="L", CC mode) VIN = 1.7V OUT 2 1.5 1 0.5 0 Output Voltage V RP115L071x (LCON="L", CS mode) VIN = 1.7V OUT [V] / CE Input Voltage V CE[V] Output Voltage V OUT [V] / CE Input Voltage V CE[V] Output Voltage V OUT [V] / CE Input Voltage V CE[V] 16) Inrush Current (CIN = Ceramic 1.0 μF, IOUT = 0 mA, Ta = 25°C) 29 RP115x 0 50 100 Time t [μs] 150 200 RP115x171x (LCON="H", CS mode) VIN = 2.7V 3 2.5 CE Input Voltage 2 0V => 2.7V 1.5 Output Voltage 1 0.5 0 Cout = 1.0μF Cout = 2.2μF 500 Cout = 4.7μF 400 Cout = 10μF 300 Inrush Current 200 100 0 -50 0 50 100 Time t [μs] 150 200 1 0 Cout = 10μF Output Voltage V Inrush Current -50 2 1.5 1 0.5 0 0 50 100 150 Time t [μs] 400 300 200 100 0 200 250 Inrush Current Irush [mA] Output Voltage OUT [V] / CE Input Voltage V CE[V] CE Input Voltage 0V => 5.25V RP115x071x (LCON="H", CC mode) VIN = 1.7V CE Input Voltage 0V => 1.7V Output Voltage Cout = 100μF 500 Inrush Current400 300 200 100 0 -50 0 50 100 150 200 250 Time t [μs] Inrush Current Irush [mA] -50 5 4 3 2 RP115x171x (LCON="H", CC mode) VIN = 2.7V 3 2.5 CE Input Voltage 2 0V => 2.7V 1.5 Output Voltage 1 0.5 0 Cout = 22μF 500 400 300 Inrush Current 200 100 0 -50 0 50 100 150 200 250 Time t [μs] Inrush Current Irush [mA] Output Voltage Cout = 1.0μF Cout = 2.2μF 500 Cout = 4.7μF Cout = 10μF 400 Cout = 22μF Cout = 47μF 300 200 Inrush Current100 0 [V] / CE Input Voltage V CE[V] CE Input Voltage 0V => 1.7V RP115L431x (LCON="L", CC mode) VIN = 5.25V 6 OUT RP115x071x (LCON="H", CS mode) VIN = 1.7V Output Voltage V 200 [V] / CE Input Voltage V CE[V] 150 OUT 50 100 Time t [μs] Inrush Current Irush [mA] 2 1.5 1 0.5 0 0 Output Voltage V -50 Inrush Current Irush [mA] RP115L431x (LCON="L", CS mode) VIN = 5.25V 6 CE Input Voltage 5 0V => 5.25V 4 Output Voltage 3 2 1 Cout = 1.0μF Cout = 2.2μF 400 0 Cout = 4.7μF 300 Inrush Current 200 100 0 Inrush Current Irush [mA] Output Voltage V OUT [V] / CE Input Voltage V CE[V] Output Voltage V OUT [V] / CE Input Voltage V CE[V] Output Voltage V OUT [V] / CE Input Voltage V CE[V] No. EA-274-211102 30 RP115x 50 100 Time t [μs] 150 200 RP115x431x (LCON="H", CS mode) 6 5 4 3 2 1 0 VIN = 5.25V CE Input Voltage 0V => 5.25V Cout = 1.0μF Cout = 2.2μF Cout = 4.7μF Inrush Current -50 0 50 100 Time t [μs] 150 Inrush Current Irush [mA] Output Voltage 500 400 300 200 100 0 200 [V] / CE Input Voltage V CE[V] Cout = 22μF Inrush Current -50 0 500 400 300 200 100 0 50 100 150 200 250 Time t [μs] Inrush Current Irush [mA] 0 Output Voltage RP115x431x (LCON="H", CC mode) VIN = 5.25V 6 5 4 3 2 1 0 CE Input Voltage 0V => 5.25V Output Voltage Cout = 10μF 500 400 300 200 100 0 Inrush Current -50 0 50 100 150 Time t [μs] 200 250 Inrush Current Irush [mA] -50 CE Input Voltage 0V => 2.8V OUT 500 400 300 Inrush Current200 100 0 3 2.5 2 1.5 1 0.5 0 Output Voltage V Cout = 1.0μF Cout = 2.2μF Cout = 4.7μF Cout = 10μF [V] / CE Input Voltage V CE[V] Output Voltage V [V] / CE Input Voltage V CE[V] Inrush Current Irush [mA] Output Voltage OUT Output Voltage V VIN = 2.8V CE Input Voltage 0V => 2.8V RP115x181x (LCON="H", CC mode) VIN = 2.8V OUT 3 2.5 2 1.5 1 0.5 0 Output Voltage V RP115x181x (LCON="H", CS mode) OUT [V] / CE Input Voltage V CE[V] No. EA-274-211102 31 RP115x No. EA-274-211102 0 20 40 time t [μs] 60 80 VIN = 1.7V IOUT = 500mA LCON Voltage 0V 1.7V 0.72 0.71 0.7 0.69 0.68 0.67 3 2 1 0 Output Voltage -20 0 20 40 60 80 Output Voltage -20 0 Output Voltage -20 0 20 40 time t [μs] 60 80 60 80 6 4 2 0 VIN = 5.25V IOUT = 500mA 6 4 2 0 LCON Voltage 0V 5.25V VIN = 5.25V IOUT = 1mA LCON Voltage 0V 5.25V 4.34 4.33 4.32 4.31 4.3 4.29 Output Voltage -20 0 20 40 time t [μs] 60 80 RP115x431x Output Voltage VOUT[V] 4.34 4.33 4.32 4.31 4.3 4.29 LCON Voltage VLCON[V] Output Voltage VOUT[V] VIN = 5.25V IOUT = 150mA 6 4 2 0 LCON Voltage 0V 5.25V 20 40 time t [μs] RP115x431x time t [μs] RP115x431x LCON Voltage VLCON[V] 0.72 0.71 0.7 0.69 0.68 0.67 LCON Voltage VLCON[V] -20 VIN = 1.7V IOUT = 150mA 3 2 1 0 LCON Voltage 0V 1.7V LCON Voltage VLCON[V] Output Voltage Output Voltage VOUT[V] 0.72 0.71 0.7 0.69 0.68 0.67 3 2 1 0 RP115x071x Output Voltage VOUT[V] LCON Voltage 0V 1.7V RP115x071x Output Voltage VOUT[V] VIN = 1.7V IOUT = 1mA LCON Voltage VLCON[V] Output Voltage VOUT[V] RP115x071x LCON Voltage VLCON[V] 17) LCON Pin Transient Response (CIN = Ceramic 1.0 μF, COUT = Ceramic 1.0 μF, Ta = 25°C) 4.34 4.33 4.32 4.31 4.3 4.29 Output Voltage -20 0 20 40 time t [μs] 60 80 32 POWER DISSIPATION DFN1216-8 Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.2 mm × 15 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 1700 mW Thermal Resistance (θja) θja = 56°C/W Thermal Characterization Parameter (ψjt) ψjt = 18°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 2000 1800 1700 Power Dissipation (mW) 1600 1400 1200 1000 800 600 400 200 0 0 25 50 75 85 100 125 Ambient Temperature (°C) Power Dissipation vs. Ambient Temperature Measurement Board Pattern i PACKAGE DIMENSIONS DFN1216-8 1.30±0.05 5 0.05 8 0.20±0.05 B * 1.20 X4 1.60 0.30±0.05 C0.15 0.4max INDEX 4 0.40 0.18±0.05 1 0.05 A 0.20±0.05 Ver. A 0.05 M AB Bottom View 0.05 S S DFN1216-8 Package Dimensions (Unit: mm) * ∗ The tab on the bottom of the package shown by blue circle is a substrate potential (GND). It is recommended that this tab be connected to the ground plane on the board but it is possible to leave the tab floating. i POWER DISSIPATION SOT-89-5 Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes  0.3 mm × 13 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 2600 mW Thermal Resistance (ja) ja = 38°C/W Thermal Characterization Parameter (ψjt) ψjt = 13°C/W ja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter 3000 2600 Power Dissipation PD (mW) 2500 2000 1500 1000 500 0 0 25 50 75 85 100 125 Ambient Temperature (°C) Power Dissipation vs. Ambient Temperature Measurement Board Pattern i SOT-89-5 PACKAGE DIMENSIONS Ver. A 4.5±0.1 1.5±0.1 0.4±0.3 2 5 4.35±0.1 φ1.0 1 4 4 2.5±0.1 1.00±0.2 5 0.4±0.1 0.3±0.2 0.42±0.1 0.1 S 3 0.4±0.1 3 2 1 0.3±0.2 1.6±0.2 S 0.42±0.1 0.42±0.1 0.47±0.1 1.5±0.1 1.5±0.1 SOT-89-5 Package Dimensions i 1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to Ricoh sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written consent of Ricoh. 3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise taking out of your country the products or the technical information described herein. 4. The technical information described in this document shows typical characteristics of and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under Ricoh's or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and transportation equipment, combustion equipment, safety devices, life support system etc.) should first contact us. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. Anti-radiation design is not implemented in the products described in this document. 8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 10. There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact Ricoh sales or our distributor before attempting to use AOI. 11. Please contact Ricoh sales representatives should you have any questions or comments concerning the products or the technical information. Halogen Free Ricoh is committed to reducing the environmental loading materials in electrical devices with a view to contributing to the protection of human health and the environment. Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since April 1, 2012. Official website https://www.n-redc.co.jp/en/ Contact us https://www.n-redc.co.jp/en/buy/