RP124x Series
100 mA Ultra-low Supply Current (0.3 µA) LDO Regulator with Battery Monitor
No. EA-503-191025
OVERVIEW
The RP124x is an LDO regulator with a battery monitor (BM) featuring ultra-low supply current.
The battery monitor has a function which divides the input voltage (VIN) into 1/3 or 1/4. The battery
charge remaining can be monitored by MCU. The buffering output enables directly inputting a signal
into the low voltage A/D converter (ADC) with built-in MCU.
KEY BENEFITS
● Achieving Low Supply Current of 0.3 µA, Longer Battery Life and Downsizing
● Requiring Only Three External Capacitors and Suitable for Space-saving Mounting for the Smaller Packages
PACKAGES
KEY SPECIFICATIONS
LDO Section
● Input Voltage Range: 1.7 V to 5.5 V
● Supply Current: Typ. 0.2 μA
● Output Voltage Accuracy: ±0.8%
● Output Current: 100 mA
● Ceramic Capacitor Compatible: 1.0 μF or more
BM Section
● Output Voltage: VIN/3 (RP124xxx3x)
VIN/4 (RP124xxx4x)
● Supply Current: Typ. 0.1 μA
● Ceramic Capacitor Compatible: 0.1 μF to 0.22 μF
DFN1212-6
SOT-23-5
1.2 mm x 1.2 mm x 0.4 mm
2.9 mm x 2.8 mm x 1.1 mm
•
TYPICAL APPLICATIONS
RP124
MCU
VDD
LDO
VOUT
VCC
CIN
Battery
CE control
CE
Battery
Monitor
GND
BM
ADC
COUT
C BM
GND
The diagram is assumed to be used for RP124xxxxE.
APPLICATIONS
•
•
•
•
Battery powered IoT devices
Energy harvesting devices
Low power wireless communication modules including: Bluetooth® LE, Zigbee, and LPWA
Low power consumption CPUs, memories, and sensors
1
RP124x
No. EA-503-191025
SELECTION GUIDE
The LDO set output voltage, the divided ratio of BM output voltage, the CE pin function and the auto-discharge
function are user-selectable options.
Selection Guide
Product Name
RP124Lxx#∗-TR
RP124Nxx#∗-TR-FE
Package
Quantity per Reel
Pb Free
Halogen Free
DFN1212-6
5,000 pcs
Yes
Yes
SOT-23-5
3,000 pcs
Yes
Yes
xx: Specify the LDO set output voltage (VSET).
1.2 V (12) / 1.5 V (15) / 1.8 V (18) / 2.1 V (21) / 2.2 V (22) / 2.3 V (23) / 2.4 V (24) / 2.5 V (25) /
2.7 V (27) / 2.8 V (28) / 3.0 V (30) / 3.1 V (31) / 3.3 V (33) / 3.6 V (36)
Contact Ricoh sales representatives for other voltages.
#: Specify the divided ratio of BM output voltage.
3: VIN/3
4: VIN/4
∗: Specify the CE pin and the auto-discharge option.
2
∗
CE pin
B
Controlling LDO with the CE pin (Active-high)
D
Controlling LDO with the CE pin (Active-high)
E
Controlling BM with the CE pin (Active-high)
Auto-discharge
LDO
No
BM
No
LDO
Yes
BM
No
LDO
No
BM
Yes
RP124x
No. EA-503-191025
BLOCK DIAGRAMS
RP124xxxxB Block Diagram
RP124xxxxD Block Diagram
3
RP124x
No. EA-503-191025
RP124xxxxE Block Diagram
4
RP124x
No. EA-503-191025
PIN DESCRIPTIONS
Bottom View
Top View
6
5
4
4
5
5
6
(mark side)
(1)
1
2
3
3
4
2
1
1
1
RP124L (DFN1212-6) Pin Configuration
2
3
RP124N (SOT-23-5) Pin Configuration
RP124L (DFN1212-6) Pin Description
Pin No.
Symbol
Description
1
VOUT
Output Pin
2
GND
Ground Pin
3
BM
Battery Monitoring Output Pin
4
CE
Chip Enable Pin, Active-high
5
NC
No Connection
6
VDD
Input Pin
RP124N (SOT-23-5) Pin Description
Pin No.
Symbol
Description
1
VDD
Input Pin
2
GND
Ground Pin
3
CE
Chip Enable Pin, Active-high
4
BM
Battery Monitoring Output Pin
5
VOUT
Output Pin
(1)
The tab on the bottom of the package enhances thermal performance and is electrically connected to GND (substrate
level). It is recommended that the tab be connected to the ground plane on the board, or otherwise be left floating.
5
RP124x
No. EA-503-191025
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings
Symbol
Item
Rating
Unit
VIN
Input Voltage
−0.3 to 6.5
V
VCE
CE Pin Voltage
−0.3 to 6.5
V
VOUT
VOUT Pin Voltage
−0.3 to VIN + 0.3
V
VBM
BM Pin Voltage
−0.3 to VIN + 0.3
V
IOUT
Output Current
130
mA
PD
Power
Dissipation(1)
DFN1212-6 (JEDEC STD. 51-7 Test Land Pattern)
850
mW
SOT-23-5 (JEDEC STD. 51-7 Test Land Pattern)
660
mW
Tj
Junction Temperature Range
−40 to 125
°C
Tstg
Storage Temperature Range
−55 to 125
°C
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage
and may degrade the life time and safety for both device and system using the device in the field. The functional
operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS
Recommended Operating Conditions
Symbol
VIN
Input Voltage
Ta
Operating Temperature
Item
Rating
RP124xxx3x
1.7 to 5.5
RP124xxx4x
2.4 to 5.5
−40 to 85
Unit
V
°C
RECOMMENDED OPERATING CONDITIONS
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the recommended
operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And the
semiconductor devices may receive serious damage when they continue to operate over the recommended operating
conditions.
(1)
6
Refer to POWEWR DISSIPATION for detailed information.
RP124x
No. EA-503-191025
ELECTRICAL CHARACTERISTICS
VIN = VSET + 1.0 V, IOUT = 1.5 mA, CIN = COUT = 1.0 μF, unless otherwise noted.
The specifications surrounded by
are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C.
RP124x Electrical Characteristics: LDO Section
Symbol
Parameters
(Ta = 25°C)
Test Conditions
VSET > 2.0 V
VOUT
Output Voltage
VSET ≤ 2.0 V
IOUT
Output Current
16
−26
26
mV
mA
20
mV
40
mV
Dropout Voltage
IOUT = 100 mA
ISS
Supply Current
VCE = VIN, IOUT = 0 mA
Fast Mode
Switching Current
Low Power Mode
Switching Current
IOUT = From Light Load to Heavy Load,
VIN = 5.0 V
IOUT = From Heavy Load to Light Load,
VIN = 5.0 V
Line Regulation
VSET + 0.5 V ≤ VIN ≤ 5.5 V
Short Current Limit
VOUT = 0 V
RDISN
−16
V
−20
VDIF
VCEL
x1.013
VSET ≤ 2.0 V
1.5 mA ≤ IOUT ≤ 100 mA
CE Pin Input Voltage,
high
CE Pin Input Voltage,
low
Auto-discharge NMOS
On-resistance
x0.987
%
Load Regulation
VCEH
x1.008
1
∆VOUT
/∆IOUT
ISC
x0.992
Unit
−1
1 µA ≤ IOUT ≤ IOUTH
∆VOUT
/∆VIN
Max.
VSET > 2.0 V
Output Voltage
Deviation
When Switching Mode
IOUTL
Typ.
100
∆VOUT
IOUTH
Min.
RP124xxxxB/D
−40
2
Refer to Product-specific
Electrical Characteristics
0.2
µA
0.5
µA
0.5
mA
0.08
mA
0.02
0.2
65
%/V
mA
1.0
V
RP124xxxxB/D
VIN = 4.0 V, VCE = 0 V, RP124xxxxD
0.42
0.4
50
V
Ω
All test items listed under Electrical Characteristics are done under the pulse load condition Tj ≈ Ta = 25°C.
7
RP124x
No. EA-503-191025
ELECTRICAL CHARACTERISTICS (continued)
The specifications surrounded by
are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C.
RP124x Product-specific Electrical Characteristics: LDO Section
VOUT [V]
Product
Ta = 25°C
−40°C ≤ Ta ≤ 85°C
Name
Min.
Typ.
Max.
Min.
Typ.
Max.
RP124x12xx
RP124x15xx
RP124x18xx
RP124x21xx
RP124x22xx
RP124x23xx
RP124x24xx
RP124x25xx
RP124x27xx
RP124x28xx
RP124x30xx
RP124x31xx
RP124x33xx
RP124x36xx
8
1.184
1.484
1.784
2.084
2.183
2.282
2.381
2.480
2.679
2.778
2.976
3.076
3.274
3.572
1.200
1.500
1.800
2.100
2.200
2.300
2.400
2.500
2.700
2.800
3.000
3.100
3.300
3.600
1.216
1.516
1.816
2.116
2.217
2.318
2.419
2.520
2.721
2.822
3.024
3.124
3.326
3.628
1.174
1.474
1.774
2.073
2.172
2.271
2.369
2.468
2.665
2.764
2.961
3.060
3.258
3.554
1.200
1.500
1.800
2.100
2.200
2.300
2.400
2.500
2.700
2.800
3.000
3.100
3.300
3.600
1.226
1.526
1.826
2.127
2.228
2.329
2.431
2.532
2.735
2.836
3.039
3.140
3.342
3.646
VDIF [V]
Typ.
Max.
0.640
0.410
0.230
0.150
0.975
0.660
0.380
0.285
0.130
0.230
0.110
0.180
0.100
0.160
0.090
0.145
RP124x
No. EA-503-191025
ELECTRICAL CHARACTERISTICS (continued)
CIN = 1.0 μF, CBM = 0.22 μF, unless otherwise noted.
The specifications surrounded by
are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C.
RP124x Electrical Characteristics: Battery Monitor Section
Symbol
VBM
Parameters
Output Voltage
IBM
Output Current
ISSBM
Supply Current
VCEHBM
CE Pin Input
Voltage, high
VCELBM
CE Pin Input
Voltage, low
Auto-discharge
RDISNBM NMOS Onresistance
Test Conditions
−10 μA ≤ IBM ≤ 10 μA
(Ta = 25°C)
Typ.
Max.
1.7 V ≤ VIN ≤ 5.5 V, VIN/3−20
RP124xxx3x
VIN/3−25
VIN/3
VIN/3+20
VIN/3
VIN/3+25
2.4 V ≤ VIN ≤ 5.5 V, VIN/4−20
RP124xxx4x
VIN/4−25
VIN/4
VIN/4+20
VIN/4
VIN/4+25
1.7 V ≤ VIN ≤ 5.5 V, RP124xxx3x
2.4 V ≤ VIN ≤ 5.5 V, RP124xxx4x
Min.
−10
VIN = VCE = 3.6 V , IBM = 0 μA
1.7 V ≤ VIN ≤ 5.5 V, RP124xxx3E
2.4 V ≤ VIN ≤ 5.5 V, RP124xxx4E
0.1
mV
10
µA
0.2
µA
1.0
V
1.7 V ≤ VIN ≤ 5.5 V, RP124xxx3E
0.4
2.4 V ≤ VIN ≤ 5.5 V, RP124xxx4E
VIN = 4.0 V, VCE = 0 V, RP124xxxxE
Unit
50
V
Ω
All test items listed under Electrical Characteristics are done under the pulse load condition Tj ≈ Ta = 25°C.
9
RP124x
No. EA-503-191025
APPLICATION INFORMATION
TYPICAL APPLICATION
MCU
VIN
Power Management IC
VOUT
VCC
RP124xxxxB/D
VDD
ADC
Battery
Monitor
CIN
CE control
Battery
CE
LDO
BM
GND
VOUT
CBM
GND
COUT
VDD
Peripheral
(Sensor)
RP124xxxxB/D Typical Application Circuit
RP124xxxxE
MCU
VDD
LDO
CIN
Battery
CE control
CE
Battery
Monitor
GND
VOUT
VCC
BM
ADC
COUT
CBM
RP124xxxxE Typical Application Circuit
10
GND
RP124x
No. EA-503-191025
VIN
VCE
tW
tW
VBM
ADC
Sampling
Timing Chart Example of RP124xxxxE Circuit
The above diagram shows the example of using the RP124xxxxE typical application circuit and its timing chart.
Connecting BM pin and ADC input pin of MCU enables monitoring the battery voltage. Controlling the start-up
and stop of Battery Monitor with CE pin by the timing based on the ADC sampling reduces power consumption
of the entire system. When monitoring the battery voltage, set the waiting time (tW) in order to stabilize
waveform after the CE input voltage is set to “H”. It is recommended to set tW ≥ 10 ms for this product.
Notes on External Components
•
Phase compensation is provided to secure stable operation even when the load current is varied. For this
purpose, use a 1.0-µF or more output capacitor (COUT) between the VOUT and GND pins, and a 0.1-µF
to 0.22-µF capacitor (CBM) between the BM and GND pins with shortest-distance wiring. In case of using
a tantalum type capacitor with a large ESR (Equivalent Series Resistance), the output might become
unstable. Evaluate your circuit including consideration of frequency characteristics.
•
Connect a 1.0-µF or more input capacitor (CIN) between the VDD and GND pins with shortest-distance
wiring.
11
RP124x
No. EA-503-191025
TECHNICAL NOTES
The performance of a power source circuit using this device is highly dependent on a peripheral circuit. A
peripheral component or the device mounted on PCB should not exceed its rated voltage, rated current or
rated power. When designing a peripheral circuit, please be fully aware of the following points.
•
The high impedance of the wirings may result in noise pickup and unstable operation of the device.
Reduce the impedance of the VDD and GND wirings.
•
When an intermediate voltage other than VIN or GND is input to the CE pin, a supply current may be
increased with a through current of a logic circuit in the IC. The CE pin is neither pulled up nor pulled
down, therefore an operation is not stable at open.
12
RP124x
No. EA-503-191025
TYPICAL CHARACTERISTICS
Typical Characteristics are intended to be used as reference data; they are not guaranteed.
1) LDO Output Voltage vs. Temperature (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF)
RP124x12xx, VIN = 2.2 V, IOUT = 1.5 mA
RP124x18xx, VIN = 2.8 V, IOUT = 1.5 mA
RP124x28xx, VIN = 3.8 V, IOUT = 1.5 mA
RP124x36xx, VIN = 4.6 V, IOUT = 1.5 mA
2) LDO Supply Current vs. Temperature (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF)
RP124x12xx, VIN = 2.2 V
RP124x18xx, VIN = 2.8 V
13
RP124x
No. EA-503-191025
RP124x28xx, VIN = 3.8 V
RP124x36xx, VIN = 4.6 V
3) BM Supply Current vs. Temperature (CIN = Ceramic 1.0 µF, CBM = Ceramic 0.1 µF)
RP124xxx3x, VIN = 3.6 V
RP124xxx4x, VIN = 3.6 V
4) BM Output Voltage vs. Input Voltage (CIN = Ceramic 1.0 µF, CBM = Ceramic 0.1 µF, Ta = 25°C)
RP124xxx3x
RP124xxx4x
14
RP124x
No. EA-503-191025
5) BM Output Voltage vs. Temperature (CIN = Ceramic 1.0 µF, CBM = Ceramic 0.1 µF)
RP124xxx3x, VIN = 3.6 V
RP124xxx4x, VIN = 3.6 V
6) BM Supply Current vs. Input Voltage (CIN = Ceramic 1.0 µF, CBM = Ceramic 0.1 µF, Ta = 25°C)
RP124xxx3x
RP124xxx4x
7) LDO Dropout Voltage vs. Temperature (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF)
RP124x12xx
RP124x18xx
15
RP124x
No. EA-503-191025
RP124x28xx
RP124x36xx
8) LDO Dropout Voltage vs. Output Current (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF)
RP124x12xx
RP124x18xx
RP124x28xx
16
RP124x36xx
RP124x
No. EA-503-191025
9) LDO Dropout Voltage vs. Set Output Voltage (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF, Ta = 25℃)
10) LDO Output Voltage vs. Output Current (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF, Ta = 25℃)
RP124x12xx
RP124x18xx
RP124x28xx
RP124x36xx
17
RP124x
No. EA-503-191025
11) LDO Output Voltage vs. Input Voltage (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF, Ta = 25℃)
RP124x12xx
RP124x18xx
RP124x28xx
RP124x36xx
12) LDO Supply Current vs. Input Voltage (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF, Ta = 25℃)
RP124x12xx
0.25
Supply Current[μA]
0.2
0.15
0.1
0.05
0
0
1
2
3
4
Input Voltage[V]
18
5
6
RP124x
No. EA-503-191025
RP124x18xx (10µA/div)
RP124x18xx (0.05µA/div)
45
0.25
0.2
35
Supply Current[μA]
Supply Current[μA]
40
30
25
20
15
10
0.15
0.1
0.05
5
0
0
0
1
2
3
4
Input Voltage[V]
5
6
0
1
2
3
4
5
6
Input Voltage[V]
RP124x28xx (10µA/div)
RP124x28xx (0.05µA/div)
RP124x36xx (10µA/div)
RP124x36xx (0.05µA/div)
19
RP124x
No. EA-503-191025
13) LDO Supply Current vs. Output Current (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF, Ta = 25°C)
RP124x12xx
RP124x18xx
RP124x28xx
RP124x36xx
14) Ripple Rejection vs. Frequency (CIN = none, COUT = Ceramic 1.0 µF, Ta = 25°C)
RP124x18xx, VIN = 2.8 V
RP124x12xx, VIN = 2.2 V
20
RP124x
No. EA-503-191025
RP124x28xx, VIN = 3.8V
RP124x36xx, VIN = 4.6V
15) Ripple Rejection vs. Input Voltage (CIN = none, COUT = Ceramic 1.0 µF, Ta = 25°C)
RP124x18xx, IOUT = 100 µA
RP124x12xx, IOUT = 100 µA
RP124x28xx, IOUT = 100µA
RP124x36xx, IOUT = 100µA
21
RP124x
No. EA-503-191025
RP124x12xx, IOUT = 30mA
RP124x18xx, IOUT = 30mA
RP124x28xx, IOUT = 30mA
RP124x36xx, IOUT = 30mA
16) LDO Input Transient Response (CIN = Ceramic 0.1 µF, COUT = Ceramic 1.0 µF, Ta = 25°C)
RP124x12xx, IOUT = 30 mA, tR = tF = 5 µs
RP124x12xx, IOUT = 100 µA, tR = tF = 5 µs
22
RP124x
No. EA-503-191025
RP124x18xx, IOUT = 100 µA, tR = tF = 5 µs
RP124x18xx, IOUT = 30 mA, tR = tF = 5 µs
RP124x28xx, IOUT = 100 µA, tR = tF = 5 µs
RP124x28xx, IOUT = 30 mA, tR = tF = 5 µs
RP124x36xx, IOUT = 100 µA, tR = tF = 5 µs
RP124x36xx, IOUT = 30 mA, tR = tF = 5 µs
23
RP124x
No. EA-503-191025
17) LDO Load Transient Response (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF, Ta = 25°C)
RP124x12xx
RP124x12xx
VIN = 2.2 V, IOUT = 1.5 mA 10 mA, tR = tF = 5 µs
VIN = 2.2 V, IOUT = 1 µA 10 mA, tR = tF = 5 µs
RP124x12xx
VIN = 2.2 V, IOUT = 10 mA 30 mA, tR = tF = 5 µs
RP124x18xx
VIN = 2.8 V, IOUT = 1 µA 10 mA, tR = tF = 5 µs
24
RP124x18xx
VIN = 2.8 V, IOUT = 1.5 mA 10 mA, tR = tF = 5 µs
RP124x
No. EA-503-191025
RP124x18xx
VIN = 2.8 V, IOUT = 10 mA 30 mA, tR = tF = 5 µs
RP124x28xx
VIN = 3.8 V, IOUT = 1 µA 10 mA, tR = tF = 5 µs
RP124x28xx
VIN = 3.8 V, IOUT = 1.5 mA 10 mA, tR = tF = 5 µs
RP124x28xx
VIN = 3.8 V, IOUT = 10 mA 30 mA, tR = tF = 5 µs
25
RP124x
No. EA-503-191025
RP124x36xx
VIN = 4.6 V, IOUT = 1 µA 10 mA, tR = tF = 5 µs
RP124x36xx
VIN = 4.6 V, IOUT = 1.5 mA 10 mA, tR = tF = 5 µs
RP124x36xx
VIN = 4.6 V, IOUT = 10 mA 30 mA, tR = tF = 5 µs
RP124x364x
VIN = 4.6 V, IOUT = 1 µA 10 mA, tR = tF = 5 µs
18) LDO Turning-on with CE Pin (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF, Ta = 25°C)
RP124x12xD, VIN = 2.2 V, VCE = 0 V => 2.2 V
RP124x18xD, VIN = 2.8 V, VCE = 0 V => 2.8 V
26
RP124x
No. EA-503-191025
RP124x28xD, VIN = 3.8 V, VCE = 0 V => 3.8 V
RP124x36xD, VIN = 4.6 V, VCE = 0 V => 4.6 V
19) LDO Turning-off with CE Pin (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF, Ta = 25°C)
RP124x12xD, VIN = 2.2 V, VCE = 2.2 V => 0 V
RP124x18xD, VIN = 2.8 V, VCE = 2.8 V => 0 V
RP124x28xD, VIN = 3.8 V, VCE = 3.8 V => 0 V
RP124x36xD, VIN = 4.6 V, VCE = 4.6 V => 0 V
27
RP124x
No. EA-503-191025
RP124x364D, VIN = 4.6 V, VCE = 0 V 4.6 V
20) BM Turning-on/off with CE Pin (CIN = Ceramic 1.0 µF, CBM = Ceramic 0.1 µF, 0.22 µF, Ta = 25°C)
RP124xxx3x, VIN = 3.6 V, VCE = 0 V 3.6 V
RP124xxx4x, VIN = 3.6 V, VCE = 0 V 3.6 V
RP124xxx3x, VIN = 5.5 V, VCE = 0 V 5.5 V
28
RP124xxx4x, VIN = 5.5 V, VCE = 0 V 5.5 V
RP124x
No. EA-503-191025
21) Inrush Current at CE Pin’s Activation (CIN = Ceramic 0.1 µF, Ta = 25°C)
RP124x12xx, VIN = 2.2 V, VCE = 0 V => 2.2 V ①
RP124x12xx, VIN = 2.2 V, VCE = 0 V => 2.2 V ②
RP124x18xx, VIN = 2.8 V, VCE = 0 V => 2.8 V ①
RP124x18xx, VIN = 2.8 V, VCE = 0 V => 2.8 V ②
RP124x28xx, VIN = 3.8 V, VCE = 0 V => 3.8 V ①
RP124x28xx, VIN = 3.8 V, VCE = 0 V => 3.8 V ②
29
RP124x
No. EA-503-191025
RP124x36xx, VIN = 4.6 V, VCE = 0 V => 4.6 V ①
RP124x36xx, VIN = 4.6 V, VCE = 0 V => 4.6 V ②
22) ESR vs. Output Current (CIN = Ceramic 1.0 µF, COUT = Ceramic 1.0 µF, CBM = Ceramic 0.1 µF)
Measuring Frequency：10 Hz to 2 MHz、Ambient Temperature：-40°C to 5°C
LDO
BM
RP124x12xx, VIN= 1.7V to 5.5V
RP124xxx3x, VIN= 1.7V to 5.5V
LDO
RP124x28xx, VIN = 2.8 V to 5.5 V
30
BM
RP124xxx4x, VIN = 2.4 V to 5.5 V
RP124x
No. EA-503-191025
LDO
RP124x36xx, VIN = 3.6 V to 5.5 V
31
POWER DISSIPATION
DFN1212-6
Ver. A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following measurement conditions are based on JEDEC STD. 51-7.
Measurement Conditions
Item
Measurement Conditions
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions
76.2 mm × 114.3 mm × 0.8 mm
Copper Ratio
Outer Layer (First Layer): Less than 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square
Through-holes
0.2 mm × 14 pcs
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Item
Measurement Result
Power Dissipation
850 mW
Thermal Resistance (ja)
ja = 117°C/W
Thermal Characterization Parameter (ψjt)
ψjt = 50°C/W
ja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
1000
900
850
Power Dissipation (mW)
800
700
600
500
400
300
200
100
0
0
25
50
75 85 100
Ambient Temperature (°C)
125
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
i
DFN1212-6
PACKAGE DIMENSIONS
Ver. B
DFN1212-6 Package Dimensions
∗ The tab on the bottom of the package is substrate level (GND). It is recommended that the tab be connected to the
ground plane on the board, or otherwise be left floating.
i
POWER DISSIPATION
SOT-23-5
Ver. A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following measurement conditions are based on JEDEC STD. 51-7.
Measurement Conditions
Item
Measurement Conditions
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions
76.2 mm × 114.3 mm × 0.8 mm
Copper Ratio
Outer Layer (First Layer): Less than 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square
Through-holes
0.3 mm × 7 pcs
(Ta = 25°C, Tjmax = 125°C)
Measurement Result
Item
Measurement Result
Power Dissipation
660 mW
Thermal Resistance (ja)
ja = 150°C/W
Thermal Characterization Parameter (ψjt)
ψjt = 51°C/W
ja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
i
SOT-23-5
PACKAGE DIMENSIONS
Ver. A
2.9±0.2
1.1±0.1
1.9±0.2
0.8±0.1
(0.95)
4
1
2
0～0.1
0.2min.
+0.2
1.6-0.1
5
2.8±0.3
(0.95)
3
0.4±0.1
+0.1
0.15-0.05
SOT-23-5 Package Dimensions
i
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