1N4448

1N4148 / 1N4150 / 1N4448 / 1N914B Diodes Switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ∗This product is available only outside of Japan. !Applications High-speed switching !External dimensions (Units : mm) !Features 1) Glass sealed envelope. (GSD) 2) High speed. 3) High reliability. CATHODE BAND (BLACK) Type No. φ 0.5±0.1 C 29±1 3.8±0.2 29±1 A φ 1.8±0.2 !Construction Silicon epitaxial planar ROHM : GSD EIAJ : − JEDEC : DO-35 !Absolute maximum ratings (Ta = 25°C) Type 1N4148 1N4150 1N4448 (1N914B) VRM (V) 100 50 100 VR (V) 75 50 75 IFM (mA) 450 600 450 IO (mA) 150 200 150 IF (mA) 200 250 200 IFSM 1µs (A) 2 4 2 P (mW) 500 500 500 Tj (°C) 200 200 200 Topr (°C) −65~+200 −65~+200 −65~+200 Tstg (°C) −65~+200 −65~+200 −65~+200 !Electrical characteristics (Ta = 25°C) VF (V) Type @ @ @ 1mA BV (V) Min. @ 30mA IR (µA) Max. @25°C VR (V) 0.025 5.0 0.1 0.025 5.0 20 75 50 20 75 50.0 @ 2mA @ 5mA @ 10mA @ 20mA @ 50mA @ @ @ 0.1mA 0.25mA 100mA 200mA 250mA @ 5µA 75 @ 100µA 100 @150°C trr (ns) VR=6V VR=0 IF=10mA VR (V) f=1MHz RL=100Ω 20 4 4 Cr (pF) 1N4148 0.54 1N4150 0.62 1N4448 (IN914B) 0.62 0.72 1.0 0.74 0.86 0.92 1.0 1.0 0.66 0.76 0.82 0.87 − − 50 100.0 50 2.5 4 100 50.0 20 4 4 The upper figure is the minimum VF and the lower figure is the maximum VF value. 1N4148 / 1N4150 / 1N4448 / 1N914B Diodes !Electrical characteristic curves (Ta = 25°C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 50 3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0 FORWARD CURRENT : IF (mA) 3000 REVERSE CURRENT : IR (nA) 100°C 20 10 5 2 25°C Ta=75° C Ta=25°C Ta=−25 °C 1000 300 100 30 10 3 70°C 50°C Ta=25°C 1 0.5 0.2 0 0.2 Ta=1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 5 10 15 20 25 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 3 100 REVERSE RECOVERY TIME : trr (ns) SURGE CURRENT : Isurge (A) VR=6V Irr=1/10IR 2 50 PULSE Single pulse 20 10 5 1 2 0 0 10 20 30 1 0.1 1 10 100 1000 10000 FORWARD CURRENT : IF (mA) PULSE WIDTH : Tw (ms) Fig. 4 Reverse recovery time characteristics Fig. 5 Surge current characteristics 0.01µF D.U.T. PULSE GENERATOR OUTPUT 50Ω 5Ω 50Ω SAMPLING OSCILLOSCOPE INPUT 100ns OUTPUT trr 0 0.1IR Fig. 6 Reverse recovery time (trr) measurement circuit IR