1SR139-400

1SR139-400 Diodes Rectifier diode 1SR139-400 Applications High speed rectification External dimensions (Unit : mm) CAT H O D E　 B AN D (GREEN) φ 0 .6 ± 0 .1 Features 1) Cylindrical mold. (MSR) 2) High reliability. 3) Fast recovery speed. 2 9±1 3.0±0.2 ① ② 4 29±1 φ 2 .5 ± 0 .2 ROHM : MS R ① ② Man u fac tu re Date Construction Silicon diffused junction Taping specifications (Unit : mm) BROWN H2 A BLUE E Symbol Ａ Standard dimension value(mm) B C L1 H1 F L2 D T-31 　 52.4±1.5 +0.4 T-32 26.0 0 T-31 　 5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A±1.2 E T-32 1/2A±0.4 T-31 ±0.7 Ｆ T-32 0.2 max. T-31 H1 6.0±0.5 T-32 T-31 H2 5.0±0.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. ＊H1(6mm)：BROWN Absolute maximum ratings (Ta=25°C) Parameter Absolute peak reverse voltage Reverse voltage (repetitive peak) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature (*1) Mounting on alumina board Symbol VRMS VR Io IFSM Tj Tstg Limits 500 400 1 40 150 -40 to +150 Unit V V A A ℃ ℃ Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 1.1 10 Unit V uA Conditions IF=1.0A VR=400V Rev.B 1/3 1SR139-400 Diodes Electrical characteristic curves (Ta=25°C) 1 Ta=75℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 100000 Ta=125℃ Ta=25℃ 10000 1000 100 10 1 0.1 0 200 400 600 800 1000 1200 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS Ta=150℃ 100 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 0.1 Ta=150℃ Ta=-25℃ Ta=75℃ Ta=25℃ Ta=-25℃ 10 0.01 0.001 1 100 200 300 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 970 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 500 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1A n=30pcs 50 Ta=25℃ VR=400V n=30pcs 450 400 350 300 250 200 150 100 50 0 AVE:28.27nA 45 40 35 30 25 20 15 10 5 0 AVE:22.8pF 960 950 940 930 920 AVE:932.2mV Ta=25℃ f=1MHz VR=0V n=10pcs VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 150 RESERVE RECOVERY TIME:trr(us) PEAK SURGE FORWARD CURRENT:IFSM(A) 3 PEAK SURGE FORWARD CURRENT:IFSM(A) 2.5 2 1.5 AVE:1.597us 1 0.5 0 Ifsm 1cyc 8.3ms 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 Ifsm 8.3ms 8.3ms 1cy 50 50 AVE:43.0A 0 IFSM DISRESION MAP 0 trr DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 10000 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board IF=0.5A IM=1mA 2 PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD POWER DISSIPATION:Pf(W) 1000 time(ms) DC D=1/2 Sin(θ＝180) 1 Rth(j-a) 50 100 td=300us Rth(j-l) 10 Rth(j-c) 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 Rev.B 2/3 1SR139-400 Diodes 0.02 3 2.5 2 DC 1.5 1 0.5 0 0 100 200 300 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 400 0 25 50 75 100 12 5 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) Sin(θ＝180) D=1/2 0A 0V Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 VR D=t/T VR=200V T Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 1 Sin(θ＝180) 0A 0V Io t VR D=t/T VR=200V T Tj=150℃ t REVERSE POWER DISSIPATION:PR (W) DC 0.01 Sin(θ＝180) D=1/2 DC D=1/2 0.5 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 AVE:18.6V 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:5.00kV ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1