1SR153-400

1SR153-400 Diodes Rectifier diode 1SR153-400 Applications For fast rectifier External dimensions (Unit : mm) CAT H O D E　 B AN D (S I LVER) φ0 .6 ± 0 .1 ① ② 4 Features 1) Cylindrical mold type. (MSR) 2) High reliability. 3) High switching speed. ROHM : MS R 2 9± 1 3.0±0.2 29± 1 φ2.5 ± 0 .2 Construction Silicon diffused junction ① ② Man u fac tu re Date Taping dimensions (Unit : mm) BROWN H2 A BLUE E Symbol Ａ Standard dimension value(mm) B C L1 H1 F L2 D T-31 　 52.4±1.5 +0.4 T-32 26.0 0 T-31 　 5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T-32 T-31 D 0 T-32 T-31 1/2A±1.2 E T-32 1/2A±0.4 T-31 ±0.7 Ｆ T-32 0.2 max. T-31 H1 6.0±0.5 T-32 T-31 H2 5.0±0.5 T-32 T-31 1.5 max. |L1-L2| T-32 0.4 max. ＊H1(6mm)：BROWN Absolute maximum ratings (Ta=25°C) Parameter Maximum peak surge reverse voltage Surge reverse voltage Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature (*1)Mounting on alumina board Symbol VRMS VR Io IFSM Tj Tstg Limits 500 400 1 30 150 -40 to +150 Unit V V A A ℃ ℃ Electrical characteristics (Ta=25°C) Pa ra m e te r Fo rw a rd vo l tag e R e ve rs e c u rrent R e ve rs e re c o ve ry ti m e S ym bol VF IR Mi n. Typ . Ma x. 1 .3 10 0 .4 U n it V uA us IF =0 .8 A VR = 400 V IF= 10m A ,IR =10m A ,Irr=1m A C o n d i ti ons trr Rev.B 1/3 1SR153-400 Diodes Electrical characteristic curves (Ta=25°C) 1000 Ta=75℃ Ta=125℃ 100 Ta=150℃ Ta=25℃ Ta=-25℃ 10 1000000 100000 10000 1000 100 Ta=-25℃ 10 1 0 20 0 4 00 600 800 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1200 0 100 2 00 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 Ta=75℃ Ta=25℃ Ta=150℃ Ta=125℃ 10 f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 1 0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1170 1000 10 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1160 REVERSE CURRENT:IR(uA) Ta=25℃ IF=1A n=30pcs 900 800 700 600 500 400 300 200 100 0 AVE:203.11nA Ta=25℃ VR=400V n=30pcs 9 8 7 6 5 4 3 2 1 0 AVE:6.95pF Ta=25℃ f=1MHz VR=0V n=10pcs 1150 1140 1130 AVE:1139.8mV 1120 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 150 240 100 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 100 AVE:42.0A 50 1cyc 8.3ms 230 220 210 200 190 180 170 160 AVE:200.7ns Ta=25℃ IF=10mA IR=10mA Irr=0.10*IR n=10pcs 80 Ifsm 8.3ms 8.3ms 1cyc 60 40 20 0 IFSM DISRESION MAP 0 trr DISPERSION MAP 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Mounted on epoxy board 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IM=10mA IF=0.5A 3 2.5 PEAK SURGE FORWARD CURRENT:IFSM(A) t 50 FORWARD POWER DISSIPATION:Pf(W) Ifs 100 1ms time Rth(j-a) D=1/2 2 1.5 1 0.5 Sin(θ＝180) DC 300us 10 Rth(j-c) 1 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 0.1 0.001 0 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 Rev.B 2/3 1SR153-400 Diodes 0.1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 0A 0V Io t VR D=t/T VR=200V T Tj=150℃ 2.5 2 DC 1.5 1 Sin(θ＝180) 0.5 0 0 25 50 75 1 00 125 150 0 25 50 75 1 00 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) D=1/2 0A 0V Io t VR D=t/T VR=200V T Tj=150℃ 0.08 REVERSE POWER DISSIPATION:PR (W) 2.5 2 DC 1.5 1 0.5 0 Sin(θ＝180) Sin(θ＝180) 0.06 D=1/2 0.04 DC 0.02 D=1/2 0 0 1 00 200 300 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 400 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:20.6kV ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1