1SR153-400
Diodes
Rectifier diode
1SR153-400
zApplications
For fast rectifier
zExternal dimensions (Unit : mm)
CATHODE BAND (SILVER)
φ0.6±0.1
①
②
4
zFeatures
1) Cylindrical mold type. (MSR)
2) High reliability.
3) High switching speed.
3.0±0.2
29±1
29±1
φ2.5±0.2
ROHM : MSR
①
zConstruction
Silicon diffused junction
②
Manufacture Date
zTaping dimensions (Unit : mm)
BROWN
Symbol
A
H2
BLUE
E
C
L2
F
H1
T-31 52.4±1.5
+0.4
T-32
26.0 0
T-31 5.0±0.5
B
T-31
5.0±0.3
T-31
C
1.0 max.
T-32
T-31
D
0
T-32
T-31
1/2A±1.2
E
T-32
1/2A±0.4
T-31
±0.7
F
T-32
0.2 max.
T-31
H1
6.0±0.5
T-32
T-31
H2
5.0±0.5
T-32
T-31
1.5 max.
|L1-L2|
T-32
0.4 max.
*H1(6mm):BROWN
A
B
L1
Standard dimension
value(mm)
D
zAbsolute maximum ratings (Ta=25°C)
Parameter
Maximum peak surge reverse voltage
Surge reverse voltage
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Limits
500
400
1
30
150
-40 to +150
Symbol
VRMS
VR
Io
IFSM
Tj
Tstg
Unit
V
V
A
A
℃
℃
(*1)Mounting on alumina board
zElectrical characteristics (Ta=25°C)
Param eter
Sym bol
Min.
Typ.
Max.
Unit
VF
-
-
1.3
V
IF =0.8A
R evers e current
IR
-
-
10
uA
VR =400V
R evers e recovery tim e
trr
-
-
0.4
us
IF=10mA,IR =10mA,Irr=1mA
Forward voltage
Conditions
Rev.B
1/3
1SR153-400
Diodes
zElectrical characteristic curves (Ta=25°C)
1000000
1000
Ta=150℃
Ta=75℃
10
Ta=125℃
f=1MHz
Ta=25℃
Ta=-25℃
10
10000
Ta=75℃
1000
Ta=25℃
100
Ta=-25℃
10
1
200
400
600
800 1000
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1200
1170
1
0.1
1
0
0
100
200
300
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0
400
1130
AVE:1139.8mV
800
700
600
500
AVE:203.11nA
400
300
200
4
3
2
Ct DISPERSION MAP
IR DISPERSION MAP
100
AVE:42.0A
50
Ta=25℃
IF=10mA
IR=10mA
Irr=0.10*IR
n=10pcs
230
220
210
200
190
AVE:200.7ns
180
170
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms
RESERVE RECOVERY TIME:trr(ns)
1cyc
30
AVE:6.95pF
5
0
240
100
6
1
VF DISPERSION MAP
Ifsm
25
Ta=25℃
f=1MHz
VR=0V
n=10pcs
7
0
150
20
8
100
1120
15
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:VF(mV)
1140
10
10
Ta=25℃
VR=400V
n=30pcs
900
1150
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1000
Ta=25℃
IF=1A
n=30pcs
1160
PEAK SURGE
FORWARD CURRENT:IFSM(A)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
Ta=150℃
100
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
100000
Ifsm
80
8.3ms 8.3ms
1cyc
60
40
20
0
160
1
trr DISPERSION MAP
IFSM DISRESION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Mounted on epoxy board
Ifs
t
50
0
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
100
IM=10mA
1ms
3
IF=0.5A
time
2.5
Rth(j-a)
FORWARD POWER
DISSIPATION:Pf(W)
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
300us
Rth(j-c)
10
D=1/2
2
DC
Sin(θ=180)
1.5
1
1
0.5
0.1
0.001
0
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
Rev.B
2
2/3
1SR153-400
Diodes
0.1
REVERSE POWER
DISSIPATION:PR (W)
0.08
Sin(θ=180)
0.06
D=1/2
0.04
DC
0.02
3
0A
0V
2.5
2
DC
1.5
Io
t
VR
D=t/T
VR=200V
T Tj=150℃
D=1/2
1
0.5
Sin(θ=180)
0
0
0
100
200
300
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
400
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
3
Io
0A
0V
2.5
t
2
DC
1.5
VR
D=t/T
VR=200V
T Tj=150℃
D=1/2
1
Sin(θ=180)
0.5
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
No break at 30kV
25
20
15
AVE:20.6kV
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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