1SR154-400

Data Sheet Rectifier diode 1SR154-400 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.6±0.15 0.2 1.2±0.3 Features 1)Small power mold type(PMDS) 2)High Reliability 2.0 4.5±0.2 1 ① 4 ② 0.1±0.02    0.1   5.0±0.2 0.3 1.5±0.2 1.5± 0.2 2.0±0.2 PMDS Construction Silicon diffused junction ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Structure Taping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (non-repetitive peak) VRMS Reverse voltage (repetitive peak) VR Average rectified forward current Io Forward current surge peak （60Hz/1cyc） IFSM Junction temperature Tj Storage temperature Tstg Limits 500 400 1 30 150 55 to 150 Unit V V A A C C Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 1.1 10 Unit V uA 5.3±0.1 　 0.05 9.5±0.1 12±0.2 Conditions IF=1A VR=400V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.E 4.2 1SR154-400 Electrical characteristic curves (Ta=25C) 　 Data Sheet 1 Ta=75℃ 100000 Ta=150℃ 10000 Ta=125℃ 100 f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) 0.1 Ta=25℃ Ta=150℃ Ta=-25℃ 1000 100 10 1 0.1 Ta=75℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 400 Ta=125℃ 10 0.01 Ta=-25℃ 0.001 0 200 400 600 800 1000 1200 1 0 100 200 300 0 5 10 15 20 25 30 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 970 500 Ta=25℃ IF=1A n=30pcs 450 Ta=25℃ VR=400V n=30pcs 100 90 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 960 REVERSE CURRENT:IR(nA) 400 350 300 250 200 150 100 50 AVE:28.27nA 80 70 60 50 40 30 20 10 0 AVE:25.8pF 950 AVE:932.2mV 940 930 920 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 150 3 Ifsm 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms REVERSE RECOVERY TIME:trr(us) 1cyc PEAK SURGE FORWARD CURRENT:I FSM(A) 100 8.3ms 2 1.5 1 0.5 0 AVE:1.597us PEAK SURGE FORWARD CURRENT:I FSM(A) 2.5 1cyc 50 50 AVE:64.0A 0 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 trr DISPERSION MAP IFSM DISPERSION MAP 100 1000 2 Mounted on epoxy board IM=10mA IF=0.5A TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) D=1/2 DC PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm t time 300us FORWARD POWER DISSIPATION:Pf(W) 100 1ms Sin(θ＝180) 1 50 10 Rth(j-c) 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.E 1SR154-400 0.01 3 　 3 0A 0V DC Io 2.5 2 1.5 1 Sin(θ＝180) 0.5 0 0 25 50 75 100 125 150 0 25 50 75 DC 0A 0V t Data Sheet REVERSE POWER DISSIPATION:PR (W) t T VR D=t/T VR=200V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.008 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 1 Sin(θ＝180) 0.5 0 Io VR T D=t/T VR=200V Tj=150℃ 0.006 D=1/2 DC 0.002 Sin(θ＝180) D=1/2 0.004 D=1/2 0 0 100 200 300 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 400 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curve"(Io-Ta)" CASE TEMPARATURE:Tc(℃) Derating Curve"(Io-Tc)" 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 AVE:18.6V 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:5.00kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A