1SR154-600_11

Data Sheet Rectifier diode 1SR154-600 Applications General purpose rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 ① ② 0.1±0.02 　　　 0.1 5.0±0.3 1 5 4.5±0.2 Features 1)Small power mold type. (PMDS) 2)High Reliability 1.2±0.3 PMDS Construction Silicon diffused junction 1.5±0.2 2.0±0.2 Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Symbol Absolute peak reverse voltage Reverse voltage (repetitive peak) Average rectified forward current Forward current surge peak (60Hz/1cyc) Limits 750 600 1 30 150 55 to 150 Junction temperature Storage temperature VRMS VR Io IFSM Tj Tstg Unit V V A A C C Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current VF IR Min. - Typ. - Max. 1.1 10 Unit V uA IF=1A VR=600V 5.3±0.1 　 0.05 9.5±0.1 Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A 12±0.2 4.2 1SR154-600 　 Data Sheet 1 Ta=75℃ Ta=125℃ 0.1 Ta=150℃ Ta=25℃ Ta=25℃ 100000 100 Ta=150℃ Ta=125℃ f=1MHz 10000 FORWARD CURRENT:I F (A) REVERSE CURRENT:IR(nA) 1000 Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 100 Ta=25℃ 10 Ta=25℃ 1 0.01 0.001 0 200 400 600 800 1000 1200 FORWARD VOLTAGE : VF (mV) VF-IF CHARACTERISTICS 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 950 50 Ta=25℃ IF=1A n=30pcs 300 Ta=25℃ VR=600V n=30pcs 45 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE : V F(mV) REVERSE CURRENT:IR(nA) 940 250 200 150 100 50 0 AVE:30.86nA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 40 35 30 25 20 15 10 5 0 AVE:18.1pF 930 920 AVE:926.8mV 910 900 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 150 2.5 100 REVERSE RECOVERY TIME:trr(us) 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 AVE:1.869us PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm 100 8.3ms 1cyc Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 50 50 AVE:64.0A 0 IFSM DISRESION MAP 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Mounted on epoxy board 100 1000 IM=10mA IF=0.5A Rth(j-a) 2 DC D=1/2 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm t 300us FORWARD POWER DISSIPATION:Pf(W) 100 1ms time Sin(θ＝180) 1 50 10 Rth(j-c) 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A 1SR154-600 　 Data Sheet 0.01 3 0A 0V t T DC D=1/2 Io 3 0A Io t 2 1.5 1 0.5 0 Sin(θ＝180) DC T VR D=t/T VR=300V Tj=150℃ 2.5 0V REVERSE POWER DISSIPATION:PR (W) 0.006 DC D=1/2 2 1.5 1 0.5 0 D=t/T VR=300V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.008 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 VR 0.004 Sin(θ＝180) 0.002 D=1/2 Sin(θ＝180) 0 0 100 200 300 400 500 600 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 25 50 75 100 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:3.70kV AVE:10.6kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A