Data Sheet
Rectifier diode
1SR156-400
Applications For fast rectifier Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0
2.6±0.2
Features 1) Small power mold type. (PMDS) 2) High reliability. 3) High switching speed.
2.0
①
②
0.1±0.02 0.1
5.0±0.3
2
4
4.5±0.2
1.2±0.3
1.5±0.2
2.0±0.2
PMDS
Construction Silicon diffused junction
ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date
Structure
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05 0.3
5.5±0.05
1.75±0.1
φ1.55 2.9±0.1 4.0±0.1 2.8MAX
Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)
Limits 500 400 1 20 150 55 to +150
Junction temperature Storage temperature (*1) Mounted on alumina board
VRMS VR Io IFSM Tj Tstg
Unit V V A A C C
Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR
Min. -
Typ. -
Max. 1.3 10 0.4
Unit V uA us
IF=0.8A VR=400V IF=10mA, IR=10mA, Irr=1mA
trr
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5.3±0.1 0.05 9.5±0.1
Conditions
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2011.06 - Rev.A
12±0.2
4.2
1SR156-400
Data Sheet
Ta=75℃
Ta=150℃
Ta=125℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000
1000000 100000 Ta=25℃
100 f=1MHz
FORWARD CURRENT : I F(mA)
100
Ta=150℃
REVERSE CURRENT : IR(nA)
Ta=125℃
10000 Ta=75℃ 1000 Ta=25℃ 100 10 1 0 100 200 300 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 400 Ta=25℃
10
Ta=25℃ 10
1
1 0 200 400 600 800 1000 1200 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
1050
1000
FORWARD VOLTAGE : V F(mV)
REVERSE CURRENT : IR(nA)
1040
Ta=25℃ IF=0.8A n=30pcs
900 800 700 600 500 400 300 200 100 AVE:97.5nA
Ta=25℃ VR=400V n=30pcs
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
45 40 35 30 25 20 15 10 5 0 Ct DISPERSION MAP AVE:38.3pF Ta=25℃ f=1MHz VR=0V n=10pcs
1030
1020
1010
AVE:1020.5mV
1000 VF DISPERSION MAP
0 IR DISPERSION MAP
150
240 Ifsm 8.3ms 1cyc
50 Ta=25℃ IF=10mA IR=10mA Irr=0.10*IR n=10pcs Ifsm 8.3ms 30 8.3ms
REVERSE RECOVERY TIME:trr(ns)
230 220 210 200 190 180 170 160 trr DISPERSION MAP AVE:200.7ns
PEAK SURGE FORWARD CURRENT : I FSM(A)
PEAK SURGE FORWARD CURRENT : I FSM(A)
40
100
1cyc
AVE:34.0A 50
20
10
0
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
IFSM DISRESION MAP
100
1000
Mounted on epoxy board
3 2.5
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE FORWARD CURRENT : I FSM(A)
80
IM=1mA 100
1ms
IF=0.5A tim
Ifsm t
Rth(j-a)
FORWARD POWER DISSIPATION:Pf(W)
D=1/2 2 1.5 1 0.5 Sin(θ=180)
DC
60
300us 10 Rth(j-c)
40
20
1
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS
0 0 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 2
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2/3
2011.06 - Rev.A
1SR156-400
Data Sheet
0.1
3 0A Io
3 0A Io t T VR D=t/T VR=200V Tj=150℃
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.08
REVERSE POWER DISSIPATION:PR (W)
t T
VR D=t/T VR=200V Tj=150℃
Sin(θ=180) 0.06 D=1/2 0.04 DC 0.02
2 DC 1.5 1 0.5 0 D=1/2
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
2.5
0V
2.5 2 DC 1.5 D=1/2 1 Sin(θ=180) 0.5 0
0V
Sin(θ=180)
0 0 100 200 300 400 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
0
25
50
75
100
125
150
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta)
CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc)
30 No break at 30kV 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:14.6kV
ELECTROSTATIC DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
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3/3
2011.06 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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R1120A
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