1SS355TE-17

1SS355 Diodes Switching diode 1SS355 zExternal dimensions (Units : mm) zApplications High speed switching zFeatures 1) Small surface mounting type.(UMD2) 2) High Speed.(trr=1.2ns Typ.) 3) High reliability with high surge current handling capability. 1.7±0.1 A 2.5±0.2 CATHODE MARK zConstruction Silicon epitaxial planar 0.1 0.3±0.05 1.25±0.1 +0.2 0.7 −0.1 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 90 V DC reverse voltage VR 80 V Peak forward current IFM 225 mA Mean rectifying current IO 100 mA Isurge 500 mA Surge current (1s) Junction temperature Tj 125 °C Storage temperature Tstg −55~+125 °C zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit − 1.2 V IF=100mA Conditons VF − Reverse current IR − − 0.1 µA VR=80V Capacitance between terminals CT − − 3.0 pF VR=0.5V, f=1MHz Reverse recovery time trr − − 4 ns VR=6V, IF=10mA, RL=100Ω Forward voltage +0.1 −0.05 1SS355 Diodes 1m 100m 10m REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) 1 Ta=125°C 75°C 25°C −25°C 1m 100µ 10µ 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1m 100n Ta=25°C 10n 1n 0 1.4 20 40 60 80 100 120 REVERSE VOLTAGE : VR (V) Fig.2 Reverse characteristics Fig.1 Forward characteristics 100 3 VR=6V Irr=1/10IR SURGE CURRENT : Isurge (A) REVERSE RECOVERY TIME : trr (ns) Ta=75°C 1µ FORWARD VOLTAGE : VF (V) 2 1 0 0 Ta=125°C 10µ 10 20 30 PULSE Single pulse 50 20 10 5 2 1 0.1 1 FORWARD CURRENT : IF (mA) Fig.4 Reverse recovery time characteristics 0.01µF 100 1000 10000 Fig.5 Surge current characteristics D.U.T. 5kΩ PULSE GENERATOR OUTPUT 50Ω 10 PULSE WIDTH : TW (ms) 50Ω SAMPLING OSCILLOSCOPE Fig.6 Reverse recovery time (trr) measurement circuit CAPACITANCE BETWEEN TERMINALS : CT (pF) zElectrical characteristic curves (Ta=25°C) 10 5 2 1 0.5 0.2 0.1 0 2 4 6 8 10 12 REVERSE VOLTAGE : VR (V) Fig.3 Capacitance between terminals characteristics 14