1SS355VM

Data Sheet Switching Diode 1SS355VM lApplications High frequency switching lDimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 lFeatures 1)Ultra small mold type.（UMD2） 2)High reliability 0.8MIN. UMD2 lConstruction Silicon epitaxial planer 0 .3±0.05 0.7±0.2 　　　 0.1 lStructure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) lTaping dimensions (Unit : mm) 4 .0±0.1 2.0±0.05 φ 1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 1.40±0.1 4.0±0.1 φ 1.05 1.0±0.1 lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward current average rectified forward current Io Isurge Surge current (t=1s) Junction temperature Tj Storage temperature Tstg Limits 90 80 225 100 500 150 -55 to +150 Unit V V mA mA mA C C lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Reverse recovery time IR Ct trr Min. - Typ. - Max. 1.2 0.1 3 4 Unit V μA pF ns IF=100mA VR=80V Conditions VR=0.5V , f=1MHz VR=6V , IF=10mA , RL=100Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.75 1/4 2011.12 - Rev.A 2.8±0.1 2.1 1SS355VM 　 Data Sheet 100 10000 Ta=125°C 1000 FORWARD CURRENT:IF(mA) 10 Ta=125°C REVERSE CURRENT:IR(nA) Ta=75°C 100 Ta=25°C 10 1 Ta=75°C Ta=25°C 0.1 Ta=-25°C 1 Ta=-25°C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 0 20 40 60 80 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 10 f=1MHz 910 Ta=25°C IF=100mA n=30pcs FORWARD VOLTAGE:VF(mV) 900 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 890 1 880 870 AVE:875.6mV 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 860 VF DISPERSION MAP 100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 10 0 IR DISPERSION MAP 0.1 Ct DISPERSION MAP AVE:18.8nA Ta=25°C VR=80V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.9 Ta=25°C VR=0.5V f=1MHz n=10pcs 0.7 AVE:0.817pF 0.5 0.3 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.12 - Rev.A 1SS355VM 　 Data Sheet 20 1cyc 6 Ta=25°C VR=6V IF=10mA RL=100Ω REVERSE RECOVERY TIME:trr(ns) IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 15 8.3ms 5 4 10 3 AVE:3.06ns 2 5 AVE:3.62A 1 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 10 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc 15 IFSM t 10 5 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 1000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 0.20 FORWARD POWER DISSIPATION:Pf(W) 100 Rth(j-c) D=1/2 0.10 Sin(θ＝180) DC 10 1 0.001 0.00 0.1 10 1000 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.12 - Rev.A 1SS355VM 　 Data Sheet 0.001 0.0009 DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.0008 REVERSE POWER DISSIPATION:PR(W) 0.0007 0.0006 0.0005 0.0004 0.0003 0.0002 0.0001 Sin(θ＝180) D=1/2 0.20 DC 0.15 D=1/2 0.10 Sin(θ＝180) Io t T VR D=t/T VR=40V Tj=150°C 75 100 125 150 0A 0.05 0V 0 0 20 40 60 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.00 0 25 50 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 20 ELECTROSTATIC DISCHARGE TEST ESD(KV) 15 AVE:9.0kV 10 5 AVE:1.8kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.12 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A