1SS380_11

Switching Diode 1SS380 Applications High speed switching Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.7±0.1 2.5±0.2 Features 1)Ultra small mold type. (UMD2) 2)High reliability 0.8MIN. 0.9MIN. UMD2 Construction Silicon epitaxial planar 0.3±0.05 0.7±0.2 　　　 0.1 Structure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 1.40±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current Average rectified forward current Surge current (t=1s) Junction temperature Storage temperature VRM VR IFM Io Isurge Tj Tstg Limits 40 35 225 100 400 150 55 to 150 Unit V V mA mA mA C C Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current Capacitance between terminals VF IR Ct Min. - Typ. - Max. 1.2 0.01 5.0 Unit V μA pF IF=100mA VR=20V VR=0.5V , f=1MHz www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/2 2.75 Conditions 2011.08 - Rev.C 2.8±0.1 2.1 1SS380 　 Data Sheet 100 100 REVERSE CURRENT : IR(nA) 10 1 0.1 0.01 Ta=150℃ Ta=125℃ 10 f=1MHz FORWARD CURRENT : I F(mA) 10 Ta=75℃ Ta=25℃ Ta=25℃ Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 20 Ta=125℃ Ta=25℃ 1 1 Ta=150℃ Ta=25℃ 0.001 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE : VF(V) VF-IF CHARACTERISTICS 0.0001 0 5 10 15 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 0.1 0 10 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 30 970 Ta=25℃ IF=100mA n=30pcs 200 Ta=25℃ VR=20V n=30pcs 10 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 8 7 6 5 4 3 2 1 0 AVE:3.24pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE : V F(mV) REVERSE CURRENT: IR(pA) 960 150 950 100 940 930 50 AVE:940.0mV 920 AVE:40.51pA 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 15 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) Ifsm PEAK SURGE FORWARD CURRENT : I FSM(A) 5 Ta=25℃ VR=6V IF=10mA RL=100Ω Irr=0.1*IR n=10pcs 20 PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm 15 8.3ms 8.3ms 4 10 3 1cyc 10 2 5 AVE:9.60A 1 AVE:1.20ns 0 5 0 IFSM DISPERSION MAP 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 30 PEAK SURGE FORWARD CURRENT : I FSM(A) 25 20 15 10 5 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS Ifsm t 1000 TRANSIENT THAERMAL IMPEDANCE : Rth (℃/W) Rth(j-a) ELECTROSTATIC DDISCHARGE TEST ESD(KV) 30 25 20 15 10 5 0 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS C=200pF R=0Ω C=100pF R=1.5kΩ AVE:3.70kV 100 Rth(j-c) Mounted on epoxy board AVE:5.1kV 10 IM=1mA 1ms time IF=50mA 300us 1 0.001 ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.08 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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