1SS390_11

Data Sheet Band Switching Diode 1SS390 Applications High frequency switching Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8±0.05 0.12±0.05 0.8 0.6 1.2±0.05 1.6±0.1 Features 1)Ultra small mold type. (EMD2) 2)High reliability EMD2 Construction Silicon epitaxial 0.3±0.05 Structure JEDEC :SOD-523 ROHM : EMD2 JEITA : SC-79 0.6±0.1 Taping specifications(Unit : mm) 0.2±0.05 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 8.0±0.15 2.40±0.05 2.45±0.1 1.25 0.06 1.3±0.06 0 1.25 0.06 1.26±0.05 0 0.6 0 0.2 0.76±0.05 0.75±0.05 φ0.5 0.95±0.06 0.90± 0.05 0 空ポケット Empty pocket 4.0±0.1 2.0±0.05 Absolute maximum ratings(Ta=25°C) Parameter Symbol Forward current (DC) IF VR Reverse voltage (DC) Junction temperature Tj Storage temperature Tstg Limits 100 35 125 -55 to +125 Unit mA V °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Forward operating resistance IR Ct rf Min. - Typ. - Max. 1.0 10 1.2 0.9 Unit V nA pF  IF=10mA VR=25V Conditions VR=6V , f=1MHz IF=2mA , f=100MHz , RL=100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.D 1.7 1SS390 Data Sheet 100 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 100 Ta=125℃ 10 f=1MHz Ta=125℃ 10 Ta=75℃ 1 Ta=25℃ Ta=-25℃ 10 1 0.1 0.01 0.001 Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ Ta=-25℃ 1 0.1 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 1.1 1.2 0.0001 0 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 860 0.2 Ta=25 IF=100mA n=30pcs 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 VF DISPERSION MAP IR DISPERSION MAP AVE:0.0145nA Ta=25℃ VR=25V n=30pcs 1 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) 850 840 830 820 810 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Ct DISPERSION MAP AVE:0.849pF Ta=25℃ VR=6V f=1MHz n=10pcs AVE:840.2mV 20 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms 100 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 10 10 10 AVE:4.95A 5 1 Ifsm 8.3ms 8.3ms 1cyc 1 Ifsm t 0 IFSM DISPERSION MAP 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0.1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 0.2 0.2 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) DC D=1/2 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) Sin(θ＝180) D=1/2 DC 0.15 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA 0.1 0.1 Sin(θ＝180) 0A 0V Io VR D=t/T VR=40V Tj=125℃ T 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve(Io-Ta) t 10 1ms time 0.05 300us 1 0.001 0 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 125 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.D 1SS390 Data Sheet 0.2 DC 10 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.15 D=1/2 Sin(θ＝180) 8 6 4 AVE:0.96kV 2 0 AVE:5.45kV 0.1 0A 0V Io t T VR D=t/T VR=40V Tj=125℃ 0.05 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A