1SS400

Data Sheet Switching Diode 1SS400 Applications High speed switching Dimensions (Unit : mm) 0.8±0.05 0.12±0.05 Land size figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 Features 1)Ultra small mold type. (UMD2) 2)High reliability 0.6 EMD2 Construction Silicon epitaxial planar 0.3±0.05 0.6±0.1 Structure ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping dimensions (Unit : mm) 0.2±0.05 4.0±0.1 2.0±0.05 φ1.5±0.05 3.5±0.05 1.75±0.1 8.0±0.15 1.3±0.06 0 1.26±0.05 0 2.45±0.1 0.6 φ0.5 0.95±0.06 0 0.2 0.76±0.05 Empty pocket 4.0±0.1 空ポケット 2.0±0.05 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Forward voltage(repetitive peak) Average rectified forward current Surge current(t=1s) Junction temperature Storage temperature VRM VR IFM Io Isurge Tj Tstg Limits 90 80 225 100 500 125 55 to 125 Unit V V mA mA mA C C Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current Capacitance between terminals Reverse recovery time VF IR Ct trr Min. - Typ. - Max. 1.2 0.1 3 4 Unit V μA pF ns IF=100mA VR=80V Conditions VR=0.5V , f=1MHz VR=6V , IF=10mA , RL=100Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.D 1.7 1SS400 　 Data Sheet 100 Ta=75℃ 100000 Ta=125℃ 10000 1000 100 10 Ta=25℃ 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE : VF(V) VF-IF CHARACTERISTICS 0 20 40 60 80 100 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 120 Ta=75℃ 10 f=1MHz FORWARD CURRENT : I F(mA) REVERSE CURRENT : IR(nA) 10 Ta=125℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ta=25℃ Ta=25℃ 1 0.1 0.01 0.1 0 5 10 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 15 950 100 Ta=25℃ IF=100mA n=30pcs Ta=25℃ VR=80V n=30pcs 1 0.9 Ta=25℃ VR=0.5V f=1MHz n=10pcs FORWARD VOLTAGE : V F(mV) REVERSE CURRENT : IR(nA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 940 80 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 AVE:0.698pF 930 60 920 AVE:930.3mV 40 AVE:12.47nA 20 910 900 0 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 5 100 Ta=25℃ VR=6V IF=10mA RL=100Ω Irr=0.1*IR n=10pcs AVE:1.20ns PEAK SURGE FORWARD CURRENT : I FSM(A) 15 8.3ms 10 AVE:4.05A 5 4 PEAK SURGE FORWARD CURRENT : I FSM(A) Ifsm 1cyc REVERSE RECOVERY TIME:trr(ns) 10 3 2 1 Ifsm 8.3m 8.3m 1cyc 1 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 1000 10 Rth(j-a) 9 AVE:6.43kV TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT : I FSM(A) ELECTROSTATIC DISCHARGE TEST ESD(KV) 8 7 6 5 4 3 2 1 0 C=200pF R=0Ω AVE:1.58kV 10 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA time 1 Ifsm t 10 1ms 300us 0.1 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.06 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A