1SS400G_11

Data Sheet Switching Diode 1SS400G Applications High speed switching Dimensions (Unit : mm) 0.6±0.05 0.13±0.03 Land size figure (Unit : mm) 0.5 0.5 1.0±0.05 1.4±0.05 Features 1)Ultra small mold type. （VMD2） 2)High reliability VMD2 Construction Silicon epitaxial planer 0.27±0.03 0.5±0.05 Structure ROHM : VMD2 dot (year week factory) Taping dimensions (Unit : mm) 0.18±0.05 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 3.5±0.05 1.75±0.1 1.11±0.05 2.1±0.1 φ0.5 0.76±0.1 4±0.1 2±0.05 0.4 8.0±0.3 0.1 1.2 0.3 0.65±0.05 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (repetitive peak) Average rectified forward current Surge current (1S) Junction temperature Storage temperature VRM VR IFM Io Isurge Tj Tstg Limits 90 80 225 100 500 150 55 to 150 Unit V V mA mA mA C C Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current Capacitance between terminal Reverse recovery time VF IR Ct Trr Min. - Typ. - Max. 1.2 100 3.0 4.0 Unit V nA pF ns IF=100mA VR=80V Conditions VR=0.5V f=1.0MHz VR=6V IF=10mA RL＝100Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 1SS400G 　 Data Sheet 1000 100000 Tj=150°C FORWARD CURRENT:IF(mA) 100 REVERSE CURRENT:IR(nA) Tj=150°C 10000 Tj=125°C 1000 Tj=75°C 100 Tj=125°C 10 Tj=25°C 1 Tj=75°C 10 Tj=25°C 0.1 0 500 1000 1500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 20 40 60 80 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 950 940 930 920 910 900 890 880 870 860 AVE:891.2mV Tj=25°C IF=0.1A n=30pcs 1 0.1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 850 VF DISPERSION MAP 100 Tj=25°C VR=80V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ta=25°C f=1MHz VR=0.5V n=10pcs REVERSE CURRENT:IR(nA) 0.8 0.6 AVE:0.595pF 0.4 10 AVE:22.17nA 0.2 1 IR DISPERSION MAP 0 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A 1SS400G 　 Data Sheet 20 18 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 16 14 12 10 8 6 4 2 0 IFSM DISPERSION MAP AVE:3.9A IFSM 8.3ms 1cyc REVERSE RECOVERY TIME:trr(ns) 2 Ta=25°C VR=6V IF=10mA RL=100Ω n=10pcs AVE:1.49ns 1 1.5 0.5 0 trr DISPERSION MAP 100 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 100 IFSM time 1cyc. 10 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 30 1000 20 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) Rth(j-a) Rth(j-c) 100 15 AVE：6.48kV 10 AVE：1.60kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ 10 0.001 0.01 ESD DISPERSION MAP 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A 1SS400G 　 Data Sheet 0.14 D.C. 0.12 Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) D=1/2 0.006 D.C. 0.1 FORWARD POWER DISSIPATION:Pf(W) 0.004 0.08 0.06 D=1/2 0.002 Sin(θ＝180) 0.04 0.02 0 0 0.05 0.1 0.15 0.2 0 10 20 30 40 50 60 70 80 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0.2 0A 0V D.C. t T D=1/2 Io VR D=t/T VR=40V Tj=150°C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.15 0.1 Sin(θ＝180) 0.05 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A