1SS400SM

Data Sheet Switching Diode 1SS400SM lApplications High frequency switching lDimensions (Unit : mm) 0.8±0.05 0 .12±0.05 lLand size figure (Unit : mm) 0.8 0.6 1.2±0.05 1.6±0.1 lFeatures 1)Ultra small mold type. (EMD2) 2)High reliability EMD2 lConstruction Silicon epitaxial 0.3±0.05 0.6±0.1 lStructure ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) IFM Forward voltage(repetitive peak) Average rectified forward current Io Isurge Surge current(t=1s) Junction temperature Tj Storage temperature Tstg Limits 90 80 225 100 500 150 -55 to +150 Unit V V mA mA mA °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Reverse recovery time IR Ct trr Min. - Typ. - Max. 1.2 0.1 3 4 Unit V μA pF ns IF=100mA VR=80V Conditions VR=0.5V , f=1MHz VR=6V , IF=10mA , RL=100Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A 1.7 1SS400SM Data Sheet 100 10000 Ta=125℃ 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 10 Ta=75℃ 1 Ta=125℃ 0.1 Ta=-25℃ 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 1 Ta=25℃ Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 1000 1 1 0.1 0 10 20 30 40 50 60 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 70 0.1 0 5 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 15 910 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=100mA n=30pcs 100 Ta=25℃ VR=80V n=30pcs 1 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 AVE:0.817pF Ta=25℃ VR=0.5V f=1MHz n=10pcs 900 REVERSE CURRENT:IR(nA) 80 890 60 AVE:18.8nA 40 880 870 AVE:879.0mV 20 860 0 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 REVERSE RECOVERY TIME:trr(ns) 5 Ta=25℃ VR=6V IF=10mA RL=100Ω Irr=0.1*IR n=10pcs 100 Ifsm 10 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) 15 Ifsm 1cyc 8.3ms 4 3 10 AVE:3.62A 5 2 AVE:3.06ns PEAK SURGE FORWARD CURRENT:IFSM(A) 1 1 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 Mounted on epoxy board Rth(j-a) 0.20 FORWARD POWER DISSIPATION:Pf(W) 10 100 D=1/2 Sin(θ＝180) Rth(j-c) 0.10 DC 1 Ifsm t 10 0.1 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1 0.001 0.00 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A 1SS400SM Data Sheet 0.001 0.0009 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION : PR(W) 0.0008 0.0007 0.0006 0.0005 0.0004 0.0003 0.0002 0.0001 0 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Sin(θ＝180) D=1/2 DC 0.2 DC 0.15 D=1/2 ELECTROSTATIC DISCHARGE TEST ESD(KV) 10 9 8 7 6 5 4 3 2 1 0 125 150 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:1.8kV AVE:9kV 0.1 Sin(θ＝180) Io t 0 0 25 VR D=t/T VR=40V T Tj=150℃ 50 75 100 0.05 0A 0V AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A