UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904 / 2N3904
!External dimensions (Units : mm)
2.0±0.2
UMT3904
0.9±0.1
1.3±0.1
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
0.2
0.7±0.1
(3)
2.1±0.1
(2)
1.25±0.1
(1)
0~0.1
0.3 +0.1
−0
0.1~0.4
!Features
1) BVCEO > 40V (IC = 1mA)
2) Complements the UMT3906 / SST3906 / MMST3906
/ 2N3906.
0.15±0.05
All terminals have same dimensions
Packaging type
UMT3
R1A
Code
Basic ordering unit
(pieces)
2N3904
TO-92
-
SMT3
R1A
SST3
R1A
T106
T116
T146
T93
3000
3000
3000
3000
0~0.1
0.2Min.
(3)
ROHM : SST3
+0.1
0.15 −0.06
0.4 +0.1
−0.05
All terminals have same dimensions
2.9±0.2
MMST3904
0.8±0.1
(2)
Unit
60
40
Emitter-base voltage
Collector current
VEBO
IC
6
0.2
V
V
V
A
0.2
W
W
2N3904
4.8±0.2
3.7±0.2
(12.7Min.)
UMT3904,
SST3904,
Collector
MMST3904
power
dissipation SST3904, MMST3904
All terminals have same dimensions
PC
2N3904
Junction temperature
Tj
0.35
0.625
150
Storage temperature
Tstg
−55~+150
0.15
0.5 +
−0.05
*
W
ROHM : TO-92
EIAJ : SC-43
°C
°C
(1)
(2)
(3)
5
+0.3
2.5 −
0.1
0.45±0.1
2.3
* When mounted on a 7 x 5 x 0.6 mm ceramic board.
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
BVEBO
60
40
6
ICES
-
50
V
V
V
nA
IEBO
-
-
50
nA
-
-
0.2
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
hFE
V
-
-
0.3
0.65
-
0.85
-
-
0.95
40
70
100
-
300
-
4
MHz
pF
~
V
-
Conditions
IC = 10µA
IC = 1mA
IE = 10µA
VCB = 30V
VEB = 3V
IC/IB = 10mA/1mA
IC/IB = 50mA/5mA
IC/IB = 10mA/1mA
IC/IB = 50mA/5mA
VCE = 1V , IC = 0.1mA
VCE = 1V , IC = 1mA
VCE = 1V , IC = 10mA
Transition frequency
Collector output capacitance
Cob
60
30
300
-
Emitter input capacitance
Cib
-
-
8
pF
VEB = 0.5V , f = 100kHz
td
-
-
35
ns
tr
tstg
-
-
35
200
ns
ns
VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA
VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA
tf
-
-
50
ns
Delay time
Rise time
Storage time
Fall time
(1) Emitter
(2) Base
(3) Collector
2.5Min.
Limits
VCBO
VCEO
+0.1
0.15 −0.06
0.4 +0.1
−0.05
4.8±0.2
Symbol
Parameter
(3)
ROHM : SMT3
EIAJ : SC-59
Collector-base voltage
Collector-emitter voltage
0~0.1
2.8±0.2
0.2
1.6 +
−0.1
(1)
!Absolute maximum ratings (Ta = 25°C)
(1) Emitter
(2) Base
(3) Collector
1.1 +0.2
−0.1
1.9±0.2
0.95 0.95
0.3~0.6
Marking
SST3904 MMST3904
0.45±0.1
(2)
(1)
0.2
1.3 +
−0.1
UMT3904
0.95 +0.2
−0.1
1.9±0.2
0.95 0.95
2.4±0.2
Part No.
2.9±0.2
SST3904
!Package, marking and packaging specifications
(1) Emitter
(2) Base
(3) Collector
fT
VCE = 1V , IC = 50mA
VCE = 1V , IC = 100mA
VCE = 20V , IE = −10mA, f = 100MHz
VCB = 10V , f = 100kHz
VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA
VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA
(1) Emitter
(2) Base
(3) Collector
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
COLLECTOR CURRENT : IC (mA)
10
40
Ta=25°C
35
8
30
25
6
20
4
15
10
2
5.0
IB=0µA
0
0
20
10
COLLECTOR-EMITTER VOLTAGE : VCE (V)
COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V)
!Electrical characteristic curves
Fig.1 Grounded emitter output
characteristics
Ta=25°C
IC / IB=10
0.3
0.2
0.1
0
0.1
1.0
10
100
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
500
DC CURRENT GAIN : hFE
Ta=25°C
VCE=1V
3V
5V 10V
100
10
5
0.1
1.0
10
COLLECTOR CURRENT : IC (mA)
100
1000
Fig.3 DC current gain vs. collector current ( Ι )
500
VCE=5V
DC CURRENT GAIN : hFE
Ta=125°C
Ta=25°C
100
Ta=−55°C
10
5
0.1
1.0
10
100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( ΙΙ )
1000
UMT3904 / SST3904 / MMST3904 / 2N3904
500
BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V)
Transistors
AC CURRENT GAIN : hFE
Ta=25°C
VCE=5V
f=1kHz
100
10
5
0.01
0.1
1.0
COLLECTOR CURRENT : IC (mA)
10
0.4
1.0
10
100
COLLECTOR CURRENT : IC (mA)
0
0.1
1000
40V
100
10
COLLECTOR CURRENT : IC (mA)
10
1.0
100
10
100
COLLECTOR CURRENT : IC (mA)
Fig.9 Rise time vs. collector
current
Fig.8 Turn-on time vs. collector
current
50
Ta=25°C
VCC=40V
IC/IB=10
100
15V
VCC=40V
100
15V
1000
Ta=25°C
IC / IB=10
RISE TIME : t r (ns)
40V
10
1.0
1.0
10
100
COLLECTOR CURRENT : IC (mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
FALL TIME : tf (ns)
STORAGE TIME : ts (ns)
Ta=25°C
IC=10IB1=10IB2
0.4
VCC=3V
Fig.7 Grounded emitter propagation
characteristics
1000
0.8
Ta=25°C
IC / IB=10
100
0.8
1.2
Ta=25°C
f=1MHz
CAPACITANCE (pF)
1.2
0
0.1
1000
TURN ON TIME : ton (ns)
BASE EMITTER VOLTAGE : VBE(ON) (V)
Ta=25°C
VCE=5V
1.6
1.6
100
Fig.5 AC current gain vs. collector current
1.8
Ta=25°C
IC / IB=10
1.8
10
Cib
Cob
VCE=3V
1
10
1.0
10
COLLECTOR CURRENT : IC (mA)
100
Fig.10 Storage time vs. collector
current
10
1.0
10
100
COLLECTOR CURRENT : IC (mA)
Fig.11 Fall time vs. collector
current
0.5
0.1
1.0
10
REVERSE BIAS VOLTAGE (V)
100
Fig.12 Input / output capacitance
vs. voltage
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
300 MHz
10
1.0
300MHz
200MHz
0.1
0.1
100MHz
1.0
10
100
COLLECTOR CURRENT : IC (mA)
10µ
100
10
1.0
Fig.14 Gain bandwidth product
vs. collector current
SOURCE RESISTANCE : RS (Ω)
.0
0d
dB
B
10
3.
0d
B
100
0.01
0.1
1
COLLECTOR CURRENT : IC (mA)
Ta=25°C
VCE=5V
IC=100µA
RS=10kΩ
8
6
4
2
B
0d
8.
100
0.01
0.1
1
COLLECTOR CURRENT : IC (mA)
10
Fig.19 Noise characteristics ( ΙV )
0
10
100
1k
FREQUENCY : f (Hz)
10
Fig.18 Noise characteristics ( ΙΙΙ )
10
NOISE FIGURE : NF (dB)
=3
5.
0.1
1
COLLECTOR CURRENT : IC (mA)
NF
=1
.0
dB
1k
B
0d
B
5.
0d
8.
NF
dB
B
0d
dB
12
B
8d B
5d B
3d
1k
Ta=25°C
VCE=5V
f=1kHz
12
Ta=25°C
VCE=5V
f=10Hz
10k
B
100k
Fig.17 Noise characteristics ( ΙΙ )
Fig.16 Noise characteristics ( Ι )
100k
0d
Ta=25°C
IC=1mA
hie=3.84kΩ
hfe=141
−5
hre=5.03 × 10
hoe=5.58µS
1
10
100
COLLECTOR CURRENT : IC (mA)
0.1
0.1
B
100
0.01
25
50
75
100
125
150
ANBIENT TEMPERATURE : Ta (°C)
.0
3.
1
dB
12
NF
=1
hre
hfe
B
8d
B
5d
B
3d B
0d
1.
B
8.
0
B
0d
1k
hie
0d
0.1n
B
hoe
10
10k
5d
1n
3d
1.
VCE=5V
f=270Hz
Fig.15 h parameter vs. collector current
Ta=25°C
VCE=5V
f=10kHz
10k
10n
100
dB
12 B
8d
1µ
100n
SOURCE RESISTANCE : RS (Ω)
10
COLLECTOR CURRENT : IC (mA)
100k
VCB=25V
100
Ta=25°C
VCE=5V
5.
COLLECTOR CUTOFF CURRENT : ICBO (A)
Fig.13 Gain bandwidth product
1000
h PARAMETER NORMALIZED TO 1mA
400MHz 500MHz
SOURCE RESISTANCE : RS (Ω)
Ta=25°C
100MHz 200MHz
CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)
COLLECTOR-EMITTER VOLTAGE : VCE (V)
100
10k
Fig.20 Noise vs. collector current
100k
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan
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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0