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2N3904T93

2N3904T93

  • 厂商:

    ROHM(罗姆)

  • 封装:

    TO92-3

  • 描述:

    TRANS NPN 40V 0.2A TO-92

  • 数据手册
  • 价格&库存
2N3904T93 数据手册
UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904 !External dimensions (Units : mm) 2.0±0.2 UMT3904 0.9±0.1 1.3±0.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.2 0.7±0.1 (3) 2.1±0.1 (2) 1.25±0.1 (1) 0~0.1 0.3 +0.1 −0 0.1~0.4 !Features 1) BVCEO > 40V (IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. 0.15±0.05 All terminals have same dimensions Packaging type UMT3 R1A Code Basic ordering unit (pieces) 2N3904 TO-92 - SMT3 R1A SST3 R1A T106 T116 T146 T93 3000 3000 3000 3000 0~0.1 0.2Min. (3) ROHM : SST3 +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions 2.9±0.2 MMST3904 0.8±0.1 (2) Unit 60 40 Emitter-base voltage Collector current VEBO IC 6 0.2 V V V A 0.2 W W 2N3904 4.8±0.2 3.7±0.2 (12.7Min.) UMT3904, SST3904, Collector MMST3904 power dissipation SST3904, MMST3904 All terminals have same dimensions PC 2N3904 Junction temperature Tj 0.35 0.625 150 Storage temperature Tstg −55~+150 0.15 0.5 + −0.05 * W ROHM : TO-92 EIAJ : SC-43 °C °C (1) (2) (3) 5 +0.3 2.5 − 0.1 0.45±0.1 2.3 * When mounted on a 7 x 5 x 0.6 mm ceramic board. !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO 60 40 6 ICES - 50 V V V nA IEBO - - 50 nA - - 0.2 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) DC current transfer ratio hFE V - - 0.3 0.65 - 0.85 - - 0.95 40 70 100 - 300 - 4 MHz pF ~ V - Conditions IC = 10µA IC = 1mA IE = 10µA VCB = 30V VEB = 3V IC/IB = 10mA/1mA IC/IB = 50mA/5mA IC/IB = 10mA/1mA IC/IB = 50mA/5mA VCE = 1V , IC = 0.1mA VCE = 1V , IC = 1mA VCE = 1V , IC = 10mA Transition frequency Collector output capacitance Cob 60 30 300 - Emitter input capacitance Cib - - 8 pF VEB = 0.5V , f = 100kHz td - - 35 ns tr tstg - - 35 200 ns ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA tf - - 50 ns Delay time Rise time Storage time Fall time (1) Emitter (2) Base (3) Collector 2.5Min. Limits VCBO VCEO +0.1 0.15 −0.06 0.4 +0.1 −0.05 4.8±0.2 Symbol Parameter (3) ROHM : SMT3 EIAJ : SC-59 Collector-base voltage Collector-emitter voltage 0~0.1 2.8±0.2 0.2 1.6 + −0.1 (1) !Absolute maximum ratings (Ta = 25°C) (1) Emitter (2) Base (3) Collector 1.1 +0.2 −0.1 1.9±0.2 0.95 0.95 0.3~0.6 Marking SST3904 MMST3904 0.45±0.1 (2) (1) 0.2 1.3 + −0.1 UMT3904 0.95 +0.2 −0.1 1.9±0.2 0.95 0.95 2.4±0.2 Part No. 2.9±0.2 SST3904 !Package, marking and packaging specifications (1) Emitter (2) Base (3) Collector fT VCE = 1V , IC = 50mA VCE = 1V , IC = 100mA VCE = 20V , IE = −10mA, f = 100MHz VCB = 10V , f = 100kHz VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA VCC = 3V , IC = 10mA , IB1 = −IB2 = 1mA (1) Emitter (2) Base (3) Collector UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors COLLECTOR CURRENT : IC (mA) 10 40 Ta=25°C 35 8 30 25 6 20 4 15 10 2 5.0 IB=0µA 0 0 20 10 COLLECTOR-EMITTER VOLTAGE : VCE (V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves Fig.1 Grounded emitter output characteristics Ta=25°C IC / IB=10 0.3 0.2 0.1 0 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.2 Collector-emitter saturation voltage vs. collector current 500 DC CURRENT GAIN : hFE Ta=25°C VCE=1V 3V 5V 10V 100 10 5 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.3 DC current gain vs. collector current ( Ι ) 500 VCE=5V DC CURRENT GAIN : hFE Ta=125°C Ta=25°C 100 Ta=−55°C 10 5 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ΙΙ ) 1000 UMT3904 / SST3904 / MMST3904 / 2N3904 500 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) Transistors AC CURRENT GAIN : hFE Ta=25°C VCE=5V f=1kHz 100 10 5 0.01 0.1 1.0 COLLECTOR CURRENT : IC (mA) 10 0.4 1.0 10 100 COLLECTOR CURRENT : IC (mA) 0 0.1 1000 40V 100 10 COLLECTOR CURRENT : IC (mA) 10 1.0 100 10 100 COLLECTOR CURRENT : IC (mA) Fig.9 Rise time vs. collector current Fig.8 Turn-on time vs. collector current 50 Ta=25°C VCC=40V IC/IB=10 100 15V VCC=40V 100 15V 1000 Ta=25°C IC / IB=10 RISE TIME : t r (ns) 40V 10 1.0 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.6 Base-emitter saturation voltage vs. collector current FALL TIME : tf (ns) STORAGE TIME : ts (ns) Ta=25°C IC=10IB1=10IB2 0.4 VCC=3V Fig.7 Grounded emitter propagation characteristics 1000 0.8 Ta=25°C IC / IB=10 100 0.8 1.2 Ta=25°C f=1MHz CAPACITANCE (pF) 1.2 0 0.1 1000 TURN ON TIME : ton (ns) BASE EMITTER VOLTAGE : VBE(ON) (V) Ta=25°C VCE=5V 1.6 1.6 100 Fig.5 AC current gain vs. collector current 1.8 Ta=25°C IC / IB=10 1.8 10 Cib Cob VCE=3V 1 10 1.0 10 COLLECTOR CURRENT : IC (mA) 100 Fig.10 Storage time vs. collector current 10 1.0 10 100 COLLECTOR CURRENT : IC (mA) Fig.11 Fall time vs. collector current 0.5 0.1 1.0 10 REVERSE BIAS VOLTAGE (V) 100 Fig.12 Input / output capacitance vs. voltage UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors 300 MHz 10 1.0 300MHz 200MHz 0.1 0.1 100MHz 1.0 10 100 COLLECTOR CURRENT : IC (mA) 10µ 100 10 1.0 Fig.14 Gain bandwidth product vs. collector current SOURCE RESISTANCE : RS (Ω) .0 0d dB B 10 3. 0d B 100 0.01 0.1 1 COLLECTOR CURRENT : IC (mA) Ta=25°C VCE=5V IC=100µA RS=10kΩ 8 6 4 2 B 0d 8. 100 0.01 0.1 1 COLLECTOR CURRENT : IC (mA) 10 Fig.19 Noise characteristics ( ΙV ) 0 10 100 1k FREQUENCY : f (Hz) 10 Fig.18 Noise characteristics ( ΙΙΙ ) 10 NOISE FIGURE : NF (dB) =3 5. 0.1 1 COLLECTOR CURRENT : IC (mA) NF =1 .0 dB 1k B 0d B 5. 0d 8. NF dB B 0d dB 12 B 8d B 5d B 3d 1k Ta=25°C VCE=5V f=1kHz 12 Ta=25°C VCE=5V f=10Hz 10k B 100k Fig.17 Noise characteristics ( ΙΙ ) Fig.16 Noise characteristics ( Ι ) 100k 0d Ta=25°C IC=1mA hie=3.84kΩ hfe=141 −5 hre=5.03 × 10 hoe=5.58µS 1 10 100 COLLECTOR CURRENT : IC (mA) 0.1 0.1 B 100 0.01 25 50 75 100 125 150 ANBIENT TEMPERATURE : Ta (°C) .0 3. 1 dB 12 NF =1 hre hfe B 8d B 5d B 3d B 0d 1. B 8. 0 B 0d 1k hie 0d 0.1n B hoe 10 10k 5d 1n 3d 1. VCE=5V f=270Hz Fig.15 h parameter vs. collector current Ta=25°C VCE=5V f=10kHz 10k 10n 100 dB 12 B 8d 1µ 100n SOURCE RESISTANCE : RS (Ω) 10 COLLECTOR CURRENT : IC (mA) 100k VCB=25V 100 Ta=25°C VCE=5V 5. COLLECTOR CUTOFF CURRENT : ICBO (A) Fig.13 Gain bandwidth product 1000 h PARAMETER NORMALIZED TO 1mA 400MHz 500MHz SOURCE RESISTANCE : RS (Ω) Ta=25°C 100MHz 200MHz CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) COLLECTOR-EMITTER VOLTAGE : VCE (V) 100 10k Fig.20 Noise vs. collector current 100k Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0
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